ATE363133T1 - Ein fet anordnung und eine methode zur herstellung einer fet anordnung - Google Patents
Ein fet anordnung und eine methode zur herstellung einer fet anordnungInfo
- Publication number
- ATE363133T1 ATE363133T1 AT04732700T AT04732700T ATE363133T1 AT E363133 T1 ATE363133 T1 AT E363133T1 AT 04732700 T AT04732700 T AT 04732700T AT 04732700 T AT04732700 T AT 04732700T AT E363133 T1 ATE363133 T1 AT E363133T1
- Authority
- AT
- Austria
- Prior art keywords
- fet arrangement
- field effect
- making
- fet
- arrangement
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/80—Interconnections, e.g. terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03101430 | 2003-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE363133T1 true ATE363133T1 (de) | 2007-06-15 |
Family
ID=33483981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04732700T ATE363133T1 (de) | 2003-05-20 | 2004-05-13 | Ein fet anordnung und eine methode zur herstellung einer fet anordnung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7384814B2 (de) |
| EP (1) | EP1629546B8 (de) |
| JP (1) | JP2007500452A (de) |
| KR (1) | KR101099341B1 (de) |
| CN (1) | CN1791990B (de) |
| AT (1) | ATE363133T1 (de) |
| DE (1) | DE602004006620T2 (de) |
| WO (1) | WO2004107473A1 (de) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4366483A1 (de) | 2022-11-03 | 2024-05-08 | Infineon Technologies Austria AG | Transistorvorrichtung |
| KR100669752B1 (ko) | 2004-11-10 | 2007-01-16 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판표시장치 |
| KR100603393B1 (ko) | 2004-11-10 | 2006-07-20 | 삼성에스디아이 주식회사 | 유기박막 트랜지스터 및 그의 제조방법과 유기 박막트랜지스터를 구비한 유기전계 발광표시장치 |
| KR100719547B1 (ko) | 2005-03-24 | 2007-05-17 | 삼성에스디아이 주식회사 | 유기박막 패터닝방법, 이를 이용한 유기박막 트랜지스터 및그의 제조방법과 유기 박막 트랜지스터를 구비한평판표시장치 |
| KR100647690B1 (ko) * | 2005-04-22 | 2006-11-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치 |
| KR100766318B1 (ko) * | 2005-11-29 | 2007-10-11 | 엘지.필립스 엘시디 주식회사 | 유기 반도체 물질을 이용한 박막트랜지스터와 이를 구비한액정표시장치용 어레이 기판 및 그 제조방법 |
| JP4935138B2 (ja) | 2006-03-23 | 2012-05-23 | セイコーエプソン株式会社 | 回路基板、回路基板の製造方法、電気光学装置および電子機器 |
| JP2009021297A (ja) * | 2007-07-10 | 2009-01-29 | Sumitomo Chemical Co Ltd | 有機半導体素子の製造方法、有機半導体素子及び有機半導体装置 |
| GB0802183D0 (en) * | 2008-02-06 | 2008-03-12 | Cambridge Display Technology O | Method of fabricating top gate organic semiconductor transistors |
| JP2010040897A (ja) * | 2008-08-07 | 2010-02-18 | Sony Corp | 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、および電子機器 |
| JP2011035037A (ja) * | 2009-07-30 | 2011-02-17 | Sony Corp | 回路基板の製造方法および回路基板 |
| CN101814581B (zh) * | 2010-04-29 | 2012-02-22 | 吉林大学 | 顶栅顶接触自对准有机薄膜晶体管的制备方法 |
| TWI688850B (zh) | 2013-08-13 | 2020-03-21 | 飛利斯有限公司 | 具有電子顯示器之物品 |
| CN105793781B (zh) | 2013-08-27 | 2019-11-05 | 飞利斯有限公司 | 具有可挠曲电子构件的可附接装置 |
| WO2015031426A1 (en) | 2013-08-27 | 2015-03-05 | Polyera Corporation | Flexible display and detection of flex state |
| WO2015038684A1 (en) | 2013-09-10 | 2015-03-19 | Polyera Corporation | Attachable article with signaling, split display and messaging features |
| WO2015100224A1 (en) | 2013-12-24 | 2015-07-02 | Polyera Corporation | Flexible electronic display with user interface based on sensed movements |
| TWI676880B (zh) | 2013-12-24 | 2019-11-11 | 美商飛利斯有限公司 | 動態可撓物品 |
| JP2017508493A (ja) | 2013-12-24 | 2017-03-30 | ポリエラ コーポレイション | 可撓性電子構成要素のための支持構造 |
| EP3087812B9 (de) | 2013-12-24 | 2021-06-09 | Flexterra, Inc. | Stützstrukturen für anschliessbare, zweidimensionale flexible elektronische vorrichtung |
| US20150227245A1 (en) | 2014-02-10 | 2015-08-13 | Polyera Corporation | Attachable Device with Flexible Electronic Display Orientation Detection |
| KR101533822B1 (ko) * | 2014-04-29 | 2015-07-03 | 서울대학교산학협력단 | 플렉스블 유기 전계 효과 트랜지스터의 제조 방법 |
| WO2015184045A2 (en) | 2014-05-28 | 2015-12-03 | Polyera Corporation | Device with flexible electronic components on multiple surfaces |
| WO2016138356A1 (en) | 2015-02-26 | 2016-09-01 | Polyera Corporation | Attachable device having a flexible electronic component |
| WO2019076709A1 (en) | 2017-10-19 | 2019-04-25 | Basf Se | NOVEL SUBSTITUTED BENZONAPHTHATHIOPHENES COMPOUNDS FOR ORGANIC ELECTRONIC ELEMENTS |
| KR102367372B1 (ko) | 2018-03-07 | 2022-02-25 | 주식회사 클랩 | 상부-게이트, 하부-컨택 유기 전계효과 트랜지스터 제조를 위한 패터닝 방법 |
| KR102553881B1 (ko) * | 2018-06-01 | 2023-07-07 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 이를 포함하는 박막 트랜지스터 표시판 및 전자 장치 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4732659A (en) * | 1984-06-11 | 1988-03-22 | Stauffer Chemical Company | Sputtering method for making thin film field effect transistor utilizing a polypnictide semiconductor |
| JPS61179486A (ja) * | 1985-02-04 | 1986-08-12 | 三菱電機株式会社 | 半導体装置 |
| JPH0833552B2 (ja) * | 1987-07-21 | 1996-03-29 | 株式会社フロンテック | 液晶表示素子 |
| JPS6429821A (en) * | 1987-07-24 | 1989-01-31 | Nec Corp | Thin film field effect type transistor element array and its production |
| JP2813428B2 (ja) * | 1989-08-17 | 1998-10-22 | 三菱電機株式会社 | 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置 |
| JPH0572561A (ja) * | 1991-09-17 | 1993-03-26 | Sharp Corp | アクテイブマトリクス基板 |
| JP3149041B2 (ja) * | 1992-06-05 | 2001-03-26 | 富士通株式会社 | スタガ型薄膜トランジスタの製造方法 |
| JP3246189B2 (ja) * | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | 半導体表示装置 |
| US6080606A (en) * | 1996-03-26 | 2000-06-27 | The Trustees Of Princeton University | Electrophotographic patterning of thin film circuits |
| WO1999066540A2 (en) * | 1998-06-19 | 1999-12-23 | Thin Film Electronics Asa | An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production |
| JP2000066233A (ja) * | 1998-08-17 | 2000-03-03 | Hitachi Ltd | 液晶表示装置 |
| US6335539B1 (en) * | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
| US6891237B1 (en) * | 2000-06-27 | 2005-05-10 | Lucent Technologies Inc. | Organic semiconductor device having an active dielectric layer comprising silsesquioxanes |
| DE10105914C1 (de) * | 2001-02-09 | 2002-10-10 | Siemens Ag | Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung |
| NO20013173L (no) | 2001-06-22 | 2002-12-23 | Pevatec As | Höytrykkspumpe |
| JP2002270855A (ja) * | 2002-01-24 | 2002-09-20 | Semiconductor Energy Lab Co Ltd | 絶縁ゲイト型電界効果トランジスタ |
| WO2003079400A2 (en) * | 2002-03-15 | 2003-09-25 | Koninklijke Philips Electronics N.V. | Electronic device, method, monomer and polymer |
| US6764885B2 (en) * | 2002-10-17 | 2004-07-20 | Avery Dennison Corporation | Method of fabricating transistor device |
| US7285440B2 (en) * | 2002-11-25 | 2007-10-23 | International Business Machines Corporation | Organic underlayers that improve the performance of organic semiconductors |
| KR20050109963A (ko) * | 2003-03-07 | 2005-11-22 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 전자 장치 제조 방법 |
-
2004
- 2004-05-13 DE DE602004006620T patent/DE602004006620T2/de not_active Expired - Lifetime
- 2004-05-13 JP JP2006530842A patent/JP2007500452A/ja active Pending
- 2004-05-13 WO PCT/IB2004/050680 patent/WO2004107473A1/en active IP Right Grant
- 2004-05-13 US US10/557,623 patent/US7384814B2/en not_active Expired - Fee Related
- 2004-05-13 EP EP04732700A patent/EP1629546B8/de not_active Expired - Lifetime
- 2004-05-13 AT AT04732700T patent/ATE363133T1/de not_active IP Right Cessation
- 2004-05-13 CN CN2004800137085A patent/CN1791990B/zh not_active Expired - Fee Related
-
2005
- 2005-11-18 KR KR1020057021988A patent/KR101099341B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1791990B (zh) | 2010-07-28 |
| EP1629546A1 (de) | 2006-03-01 |
| EP1629546B8 (de) | 2007-08-01 |
| US20060223218A1 (en) | 2006-10-05 |
| KR101099341B1 (ko) | 2011-12-26 |
| KR20060012306A (ko) | 2006-02-07 |
| EP1629546B1 (de) | 2007-05-23 |
| DE602004006620T2 (de) | 2008-01-24 |
| JP2007500452A (ja) | 2007-01-11 |
| US7384814B2 (en) | 2008-06-10 |
| CN1791990A (zh) | 2006-06-21 |
| WO2004107473A1 (en) | 2004-12-09 |
| DE602004006620D1 (de) | 2007-07-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |