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AT399420B - Verfahren für die herstellung einer festkörper-bildaufnahmevorrichtung - Google Patents

Verfahren für die herstellung einer festkörper-bildaufnahmevorrichtung

Info

Publication number
AT399420B
AT399420B AT0299986A AT299986A AT399420B AT 399420 B AT399420 B AT 399420B AT 0299986 A AT0299986 A AT 0299986A AT 299986 A AT299986 A AT 299986A AT 399420 B AT399420 B AT 399420B
Authority
AT
Austria
Prior art keywords
producing
solid
imaging device
image imaging
image
Prior art date
Application number
AT0299986A
Other languages
English (en)
Other versions
ATA299986A (de
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60253270A external-priority patent/JP2653780B2/ja
Priority claimed from JP60253271A external-priority patent/JP2604715B2/ja
Priority claimed from JP60253269A external-priority patent/JP2656918B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of ATA299986A publication Critical patent/ATA299986A/de
Application granted granted Critical
Publication of AT399420B publication Critical patent/AT399420B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
AT0299986A 1985-11-12 1986-11-11 Verfahren für die herstellung einer festkörper-bildaufnahmevorrichtung AT399420B (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60253270A JP2653780B2 (ja) 1985-11-12 1985-11-12 固体撮像装置の製造方法
JP60253271A JP2604715B2 (ja) 1985-11-12 1985-11-12 固体撮像装置の製造方法
JP60253269A JP2656918B2 (ja) 1985-11-12 1985-11-12 固体撮像装置の製造方法

Publications (2)

Publication Number Publication Date
ATA299986A ATA299986A (de) 1994-09-15
AT399420B true AT399420B (de) 1995-05-26

Family

ID=27334206

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0299986A AT399420B (de) 1985-11-12 1986-11-11 Verfahren für die herstellung einer festkörper-bildaufnahmevorrichtung

Country Status (10)

Country Link
US (2) US4836788A (de)
CN (1) CN1006508B (de)
AT (1) AT399420B (de)
AU (1) AU597915B2 (de)
CA (1) CA1293315C (de)
DE (1) DE3638287A1 (de)
FR (1) FR2590076A1 (de)
GB (2) GB2183092B (de)
IT (1) IT1197967B (de)
NL (1) NL194218C (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930005746B1 (ko) * 1990-10-13 1993-06-24 금성일렉트론 주식회사 지그재그 인터라인 고체 촬상소자
KR930008527B1 (ko) * 1990-10-13 1993-09-09 금성일렉트론 주식회사 Npn형 vccd 구조의 고체촬상 소자
JP2635450B2 (ja) 1991-03-26 1997-07-30 信越半導体株式会社 中性子照射用原料ｃｚシリコン単結晶
US5923071A (en) * 1992-06-12 1999-07-13 Seiko Instruments Inc. Semiconductor device having a semiconductor film of low oxygen concentration
KR970011376B1 (ko) * 1993-12-13 1997-07-10 금성일렉트론 주식회사 씨씨디(ccd)형 고체촬상소자
JP2828244B2 (ja) * 1995-09-26 1998-11-25 シャープ株式会社 受光素子
JPH09306904A (ja) * 1996-05-20 1997-11-28 Mitsubishi Electric Corp 半導体装置
US5907395A (en) * 1997-06-06 1999-05-25 Image Guided Technologies, Inc. Optical fiber probe for position measurement
JP4631717B2 (ja) * 2006-01-19 2011-02-16 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法
JP5194146B2 (ja) * 2010-12-28 2013-05-08 ジルトロニック アクチエンゲゼルシャフト シリコン単結晶の製造方法、シリコン単結晶、およびウエハ
US8466000B2 (en) 2011-04-14 2013-06-18 United Microelectronics Corp. Backside-illuminated image sensor and fabricating method thereof
US20130010165A1 (en) 2011-07-05 2013-01-10 United Microelectronics Corp. Optical micro structure, method for fabricating the same and applications thereof
US9312292B2 (en) 2011-10-26 2016-04-12 United Microelectronics Corp. Back side illumination image sensor and manufacturing method thereof
US8318579B1 (en) 2011-12-01 2012-11-27 United Microelectronics Corp. Method for fabricating semiconductor device
US8815102B2 (en) 2012-03-23 2014-08-26 United Microelectronics Corporation Method for fabricating patterned dichroic film
US9401441B2 (en) 2012-06-14 2016-07-26 United Microelectronics Corporation Back-illuminated image sensor with dishing depression surface
US8779344B2 (en) 2012-07-11 2014-07-15 United Microelectronics Corp. Image sensor including a deep trench isolation (DTI)that does not contact a connecting element physically
US8828779B2 (en) 2012-11-01 2014-09-09 United Microelectronics Corp. Backside illumination (BSI) CMOS image sensor process
US8779484B2 (en) 2012-11-29 2014-07-15 United Microelectronics Corp. Image sensor and process thereof
US9279923B2 (en) 2013-03-26 2016-03-08 United Microelectronics Corporation Color filter layer and method of fabricating the same
US9537040B2 (en) 2013-05-09 2017-01-03 United Microelectronics Corp. Complementary metal-oxide-semiconductor image sensor and manufacturing method thereof
US9129876B2 (en) 2013-05-28 2015-09-08 United Microelectronics Corp. Image sensor and process thereof
US9054106B2 (en) 2013-11-13 2015-06-09 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9841319B2 (en) 2013-11-19 2017-12-12 United Microelectronics Corp. Light detecting device
CN106591948B (zh) * 2017-01-21 2019-10-25 台州市一能科技有限公司 一种太阳能电池用n型多晶硅及其生产方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB972549A (en) * 1959-12-15 1964-10-14 Western Electric Co Production of n-type silicon bodies and silicon bodies so produced
GB979844A (en) * 1961-11-24 1965-01-06 Commissariat Energie Atomique Improvements in or relating to silicon semi-conductors
US4027051A (en) * 1973-12-14 1977-05-31 Siemens Aktiengesellschaft Method of producing homogeneously doped n-type Si monocrystals and adjusting dopant concentration therein by thermal neutron radiation
GB1530948A (en) * 1975-11-24 1978-11-01 Siemens Ag N-doped silicon crystals
GB2012482A (en) * 1977-12-01 1979-07-25 Wacker Chemitronic Manufacture on n-doped silicon by neutron bombardement
DE3035267A1 (de) * 1979-09-20 1981-04-02 Sony Corp., Tokyo Verfahren zur verfestigung von fluessigen materialien
JPS5645889A (en) * 1979-09-20 1981-04-25 Sony Corp Growing method of semiconductor single crystal
JPS5850951A (ja) * 1981-09-22 1983-03-25 セイコーエプソン株式会社 歯列矯正用ブラケツト
US4547957A (en) * 1982-06-11 1985-10-22 Rca Corporation Imaging device having improved high temperature performance

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3627500A (en) * 1969-04-03 1971-12-14 Dow Corning Method of growing semiconductor rods from a pedestal
DE2364015C3 (de) * 1973-12-21 1982-04-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit einem einstellbaren Dotierungsprofil
US4129463A (en) * 1977-06-29 1978-12-12 The United States Of America As Represented By The United States Department Of Energy Polycrystalline silicon semiconducting material by nuclear transmutation doping
JPS5917581B2 (ja) * 1978-01-13 1984-04-21 株式会社東芝 固体撮像装置
US4527182A (en) * 1980-09-19 1985-07-02 Nippon Electric Co., Ltd. Semiconductor photoelectric converter making excessive charges flow vertically
JPH0244799B2 (ja) * 1981-10-26 1990-10-05 Sony Corp Ketsushoseichohoho
JPS5958866A (ja) * 1982-09-28 1984-04-04 Mitsubishi Electric Corp サイリスタ
JPS6157181A (ja) * 1984-08-28 1986-03-24 Sharp Corp 固体撮像装置
US4659423A (en) * 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB972549A (en) * 1959-12-15 1964-10-14 Western Electric Co Production of n-type silicon bodies and silicon bodies so produced
GB979844A (en) * 1961-11-24 1965-01-06 Commissariat Energie Atomique Improvements in or relating to silicon semi-conductors
US4027051A (en) * 1973-12-14 1977-05-31 Siemens Aktiengesellschaft Method of producing homogeneously doped n-type Si monocrystals and adjusting dopant concentration therein by thermal neutron radiation
GB1530948A (en) * 1975-11-24 1978-11-01 Siemens Ag N-doped silicon crystals
GB2012482A (en) * 1977-12-01 1979-07-25 Wacker Chemitronic Manufacture on n-doped silicon by neutron bombardement
DE3035267A1 (de) * 1979-09-20 1981-04-02 Sony Corp., Tokyo Verfahren zur verfestigung von fluessigen materialien
JPS5645889A (en) * 1979-09-20 1981-04-25 Sony Corp Growing method of semiconductor single crystal
GB2059932A (en) * 1979-09-20 1981-04-29 Sony Corp Solidification processes
JPS5850951A (ja) * 1981-09-22 1983-03-25 セイコーエプソン株式会社 歯列矯正用ブラケツト
US4547957A (en) * 1982-06-11 1985-10-22 Rca Corporation Imaging device having improved high temperature performance

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
''CORISH ET AL: LATTICE DEFECTS IN SILICON DOPED BY NEUTRON TRANSMUTATION, JOURNAL OF APPLIED PHYSICS, VOL. 50, NR. 11, PART I, NOV. 1979, S. 6838-6844'' *
''HAAS ET. AL: PHOSPHORUS DOPING OF SILICON BY MEANS DEVICES, VOL ED-23, NR. 8, AUG. 1976, S. 803-805'' *

Also Published As

Publication number Publication date
CA1293315C (en) 1991-12-17
GB2220300A (en) 1990-01-04
GB2183092B (en) 1990-04-18
GB2220300B (en) 1990-04-18
CN1006508B (zh) 1990-01-17
IT1197967B (it) 1988-12-21
IT8622292A0 (it) 1986-11-11
GB8917103D0 (en) 1989-09-13
NL8602873A (nl) 1987-06-01
US4836788A (en) 1989-06-06
FR2590076A1 (fr) 1987-05-15
NL194218C (nl) 2001-09-04
ATA299986A (de) 1994-09-15
GB2183092A (en) 1987-05-28
US4951104A (en) 1990-08-21
AU597915B2 (en) 1990-06-14
FR2590076B1 (de) 1995-04-28
NL194218B (nl) 2001-05-01
GB8627003D0 (en) 1986-12-10
AU6492386A (en) 1987-05-14
DE3638287A1 (de) 1987-05-14
CN86107824A (zh) 1987-06-03

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Legal Events

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ELA Expired due to lapse of time