Nicola Zorzi
Bruno Kessler Foundation, Sensors and Devices, Faculty Member
Research Interests: Electrical Engineering, Biomedical Engineering, Gamma Spectrometry, Radiation Detectors, Semiconductor Detectors, and 11 moreLeakage Current, High Resolution, Room Temperature, Fill Factor, Ion Beam, Noise Figure, System performance, Gamma Ray, Biomedical Application, Ion Beam Induced Charge Imaging, and JFET
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This work deals with the first characterization results of an X-ray detection module developed within the scope of SIDDHARTA experiment. SIDDHARTA is a nuclear physics experiment aimed at the study of strong nuclear interactions using... more
This work deals with the first characterization results of an X-ray detection module developed within the scope of SIDDHARTA experiment. SIDDHARTA is a nuclear physics experiment aimed at the study of strong nuclear interactions using exotic atoms. This is achieved using monolithic arrays of Silicon Drift Detectors (SDDs), each consisting of eight SDD elements arranged in a 2×4 format (total area 18×34 mm2). A total of 48 SDD arrays arranged on a gantry structure are required to perform the experiment. Each SDD element is coupled to a CUBE pre-amplifier with the consequent shaping amplifier and complementary analog electronic stages implemented in a custom developed 16-channel SFERA chip. During the experiment, SDD arrays must be cooled down to cryogenic temperature below 120 K to perform X-ray spectroscopy to assess spread/shift of energy levels of exotic kaonic atoms. Alongside the cryogenic operation, the X-ray spectrometer needs to operate with a linearity of around 1 ± with an output stability of a few eV/day. This work describes the preliminary characterization results of cryogenically cooled 2×4 SDD arrays readout by SFERA chip. These include X-ray spectroscopy, stability and linearity performances.
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This work reports the results of the measurements using ARDESIA X-ray spectrometer in synchrotron measurements. ARDESIA is an SDD-based, multichannel X-ray spectrometer, optimized for synchrotron applications that require a high-count... more
This work reports the results of the measurements using ARDESIA X-ray spectrometer in synchrotron measurements. ARDESIA is an SDD-based, multichannel X-ray spectrometer, optimized for synchrotron applications that require a high-count rate (> 1Mcps/channel) and high-resolution (<130eV of FHWM Mn-Kα line at optimum shaping time, ≤200eV at short shaping times) X-ray fluorescence detection. The main applications of the ARDESIA detector are X-ray fluorescence (XRF) and X-ray absorption fine structure (XAFS) techniques. The detector is based on a monolithic array of 4 SDD with 25mm2 active area (collimated to 16mm2) each, which optimizes detector solid angle. After the optimization of the 4-channels detection module, the mechanical structure grants cooling, with a double Peltier strategy, vacuum, insulation from the harsh surrounding environment and possibility to place side-by-side several SDD modules to realize a larger number of channels. The detector signals are amplified by a monolithic four-channels CUBE preamplifier chip and processed by digital pulse processors (e.g. XGLab-DANTE, 4-channel XIA DXP-XMAP) to achieve good energy resolution at high count rates. Successful campaign of measurements at the DAΦNE DXR1 soft X-ray beamline in Frascati, Italy and ESRF LISA BM-08 beamline in Grenoble, France, such as XRF measurements in soft x-ray energy range, and long-duration consecutive XAFS measurements using various samples, confirm the qualification and performance of the instrument, in terms of energy resolution, throughput capability, immunity against external disturbances, and stability.
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This work reports the results of the measurements using ARDESIA X-ray spectrometer in synchrotron measurements. ARDESIA is an SDD-based, multichannel X-ray spectrometer, optimized for synchrotron applications that require a high-count... more
This work reports the results of the measurements using ARDESIA X-ray spectrometer in synchrotron measurements. ARDESIA is an SDD-based, multichannel X-ray spectrometer, optimized for synchrotron applications that require a high-count rate (> 1Mcps/channel) and high-resolution (<130eV of FHWM Mn-Kα line at optimum shaping time, ≤200eV at short shaping times) X-ray fluorescence detection. The main applications of the ARDESIA detector are X-ray fluorescence (XRF) and X-ray absorption fine structure (XAFS) techniques. The detector is based on a monolithic array of 4 SDD with 25mm2 active area (collimated to 16mm2) each, which optimizes detector solid angle. After the optimization of the 4-channels detection module, the mechanical structure grants cooling, with a double Peltier strategy, vacuum, insulation from the harsh surrounding environment and possibility to place side-by-side several SDD modules to realize a larger number of channels. The detector signals are amplified by a monolithic four-channels CUBE preamplifier chip and processed by digital pulse processors (e.g. XGLab-DANTE, 4-channel XIA DXP-XMAP) to achieve good energy resolution at high count rates. Successful campaign of measurements at the DAΦNE DXR1 soft X-ray beamline in Frascati, Italy and ESRF LISA BM-08 beamline in Grenoble, France, such as XRF measurements in soft x-ray energy range, and long-duration consecutive XAFS measurements using various samples, confirm the qualification and performance of the instrument, in terms of energy resolution, throughput capability, immunity against external disturbances, and stability.
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In this work, a compact set-up and three different methods to measure the Photo-Detection Efficiency (PDE) of Silicon Photomultipliers (SiPMs) and Single-Photon Avalanche Diodes (SPADs) are presented. The methods, based on either... more
In this work, a compact set-up and three different methods to measure the Photo-Detection Efficiency (PDE) of Silicon Photomultipliers (SiPMs) and Single-Photon Avalanche Diodes (SPADs) are presented. The methods, based on either continuous or pulsed light illumination, are discussed in detail and compared in terms of measurement precision and time. For the SiPM, these methods have the feature of minimizing the effect of both the primary and correlated noise on the PDE estimation. The PDE of SiPMs (produced at FBK, Trento, Italy) was measured in a range from UV to NIR, obtaining similar results with all the methods. Furthermore, the advantages of measuring, when possible, the PDE of SPADs (of the same technology and with the same layout of a single SiPM cell) instead of larger devices are also discussed and a direct comparison between measurement results is shown. Using a SPAD, it is possible to reduce the measurement complexity and uncertainty since the correlated noise sources are reduced with respect to the SiPM case.
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It is described the global architecture of a digital pulse processing system for high resolution X-Ray spectroscopy based on single photon detection and photon energy measurement. The core of the system is implemented in a modern hybrid... more
It is described the global architecture of a digital pulse processing system for high resolution X-Ray spectroscopy based on single photon detection and photon energy measurement. The core of the system is implemented in a modern hybrid device (Xilinx Zynq) that integrates an FPGA fabric along with a dual core 32-bits processor (ARM Cortex). It is also described the adopted strategy to deal with high input photon rates while preserving a good energy resolution. The digital performance of the system is ultimate determined by few key functional blocks including two finite impulse response filters and an algorithmic state machine. It is presented a numerical procedure to optimize the digital filters according to different constrains and goals, and it is described the analysis of experimental data to obtain the necessary information for the optimization of the system.
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The improvement of the coincidence resolving time (CRT) is one of the key factors for the next generation of positron emission tomography (PET) scanners. Silicon photomultipliers (SiPMs) are strong candidates to substitute photo... more
The improvement of the coincidence resolving time (CRT) is one of the key factors for the next generation of positron emission tomography (PET) scanners. Silicon photomultipliers (SiPMs) are strong candidates to substitute photo multipliers tubes because of their compactness, ruggedness and insensitivity to magnetic fields. In order to achieve the best CRT, the SiPM should have high PDE which can be obtained increasing the bias voltage. We recently improved the NUV SiPM technology, with the addition of a new substrate type that provides significantly lower afterpulsing probability (Low-AP). This enables to extend the maximum bias voltage and thus obtain higher PDE. Additionally, we implemented a lower electric field version (Low-F) to reduce the field-enhanced thermal generation components of the dark count rate. In this work we present results of energy and timing resolution for PET application, using LYSO scintillator crystals, and coupled with 3 × 3 mm2 NUV SiPMs of three types: non-Low-AP, Low-AP and Low-AP + Low-F. All the devices reach very similar energy resolutions, around 9.5 %, and close to the intrinsic limit of the LYSO. Concerning the timing resolution, we found that the Low-AP substrate achieves an improvement of the CRT of ≈ 30 ps, confirmed with the Low-F. Using 4 × 4 mm2 Low-AP SiPMs coupled to 3 × 3 × 5 mm3 and 3.8 × 3.8 × 22 mm3 LYSO crystals we obtained CRTs of 130 and 200 ps FWHM, respectively.
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ABSTRACT The paper reports on the development of novel p-on-n thin edgeless planar pixel sensors, compatible with ALICE front-end electronics, fabricated by FBK on epitaxial material. The focus of the activity is the minimization of the... more
ABSTRACT The paper reports on the development of novel p-on-n thin edgeless planar pixel sensors, compatible with ALICE front-end electronics, fabricated by FBK on epitaxial material. The focus of the activity is the minimization of the material budget required for hybrid pixel detectors. This goal has been addressed in two different stages. In the first one, planar pixel detectors fabricated on epitaxial wafers have been thinned and bonded to the readout chips. The second stage is described by the present paper: the &#39;active edge&#39; concept has been studied for the reduction of the dead area at the periphery of the devices. An overview of the key technological steps and of the electrical characterization of the fabricated sensors is given. In addition, the preliminary results on the static behavior of test sensors after neutron irradiation at different fluences (up to 2.5 x 10(15) 1MeV-n(eq)/cm(2)) are reported. The results demonstrate that these kinds of devices are a viable solution for the reduction of the material budget while maintaining the typical electrical characteristics expected from radiation silicon sensors.
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Following 3D pixel sensor production for the ATLAS Insertable B-Layer, Fondazione Bruno Kessler (FBK) fabrication facility has recently been upgraded to process 6-inch wafers. In 2014, a test batch was fabricated to check for possible... more
Following 3D pixel sensor production for the ATLAS Insertable B-Layer, Fondazione Bruno Kessler (FBK) fabrication facility has recently been upgraded to process 6-inch wafers. In 2014, a test batch was fabricated to check for possible issues relevant to this upgrade. While maintaining a double-sided fabrication technology, some process modifications have been investigated. We report here on the technology and the design of this batch, and present selected results from the electrical characterization of sensors and test structures. Notably, the breakdown voltage is shown to exceed 200 V before irradiation, much higher than in earlier productions, demonstrating robustness in terms of radiation hardness for forthcoming productions aimed at High Luminosity LHC upgrades.
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Research Interests: Electrical Engineering, Biomedical Engineering, Gamma Spectrometry, Radiation Detectors, Semiconductor Detectors, and 11 moreLeakage Current, High Resolution, Room Temperature, Fill Factor, Ion Beam, Noise Figure, System performance, Gamma Ray, Biomedical Application, Ion Beam Induced Charge Imaging, and JFET
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Light emission from MOS tunnel diodes biased in the Fowler-Nordheim regime has been investigated by using especially designed test structures which avoid the obscuring effect of the poly-Si layer, thus allowing an efficient light emission... more
Light emission from MOS tunnel diodes biased in the Fowler-Nordheim regime has been investigated by using especially designed test structures which avoid the obscuring effect of the poly-Si layer, thus allowing an efficient light emission from the Si substrate. The measured photon energy distribution of the emitted light is consistent with a hot carrier radiation model.
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We report on the characterization of the NUV-HD SiPMs developed at FBK at cryogenic temperature. A dedicated setup was built to measure the primary dark noise and correlated noises of the SiPMs between 40 and 300 K. Moreover a specific... more
We report on the characterization of the NUV-HD SiPMs developed at FBK at cryogenic temperature. A dedicated setup was built to measure the primary dark noise and correlated noises of the SiPMs between 40 and 300 K. Moreover a specific analysis program in conjunction with an ad-hoc data acquisition system were developed to allow the precise characterization of these parameters, some of which can vary up to 7 orders of magnitude between room temperature and 40 K. We proved that it is possible to operate the FBK NUV-HD SiPMs at temperatures lower than 100 K with a dark noise below 0.01 cps/mm and total correlated noise below 35% at 6 V of over-voltage. These results are relevant for the development of future cryogenic particle detector based with SiPMs as photosensors.
Single-photon detectors are employed to measure faint light signals with high detection efficiency and time resolution. Silicon photomultipliers (SiPMs) are arrays of Single-photon avalanche diodes (SPADs), each one with its quenching... more
Single-photon detectors are employed to measure faint light signals with high detection efficiency and time resolution. Silicon photomultipliers (SiPMs) are arrays of Single-photon avalanche diodes (SPADs), each one with its quenching resistor; they are connected in parallel giving a signal proportional to the number of detected photons. They offer the typical advantages of solid-state detectors (e.g. ruggedness, low power consumption, small size), high detection efficiency, good time resolution [1] and very good photon-number resolving capabilities. In FBK we produce SiPMs and SPADs with detection efficiency peaked for blue/ultraviolet light (called NUV technology) [2], or green-red light detection (RGB technology), with different geometries. The former are typically employed in a large number of applications exploiting scintillators [3]. Looking for the maximization of the photo-detection efficiency (PDE), e.g. increasing the fill-factor (FF) of the SiPM cell, noise components such as afterpulsing and optical crosstalk between cells (i.e. the correlated noise) become important issues. Recently, we developed new NUV-SiPMs, with high detection efficiency and with different solutions to reduce the noise of the detectors, both at a technological level [4] and a cell-layout level. Here we show the performance of this new NUV-SiPM, produced at FBK, employing a new silicon substrate, with a reduced minority-carriers lifetime, and new SiPM with trenches between cells and high cell density.
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Oxygenated and standard (not oxygenated) silicon diodes processed by CNM and IRST have been irradiated by 27 MeV protons and compared with standard devices from ST Microelectronics. As expected the leakage current density increase rate... more
Oxygenated and standard (not oxygenated) silicon diodes processed by CNM and IRST have been irradiated by 27 MeV protons and compared with standard devices from ST Microelectronics. As expected the leakage current density increase rate (α) and its annealing do not show any significant dependence on the starting material, oxygenation and/or processing of the considered devices. On the contrary, oxygenation improves the radiation hardness by decreasing the acceptor introduction rate (β) and mitigating the depletion voltage (Vdep) increase, with the β parameter depending also on starting material and/or effects related to device processing for standard diodes. Finally these results are included in a general review on the state of the art for silicon detector radiation hardening, confirming the good performance of the considered technologies.
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In this paper we investigate the impact of the single-cell signal response on the timing resolution capabilities of a silicon photomultiplier coupled to a slow scintillator such as LYSO. At FBK, we produced SiPMs featuring different... more
In this paper we investigate the impact of the single-cell signal response on the timing resolution capabilities of a silicon photomultiplier coupled to a slow scintillator such as LYSO. At FBK, we produced SiPMs featuring different layout configurations and, as a consequence, different values of the parameters composing the equivalent circuit. All the devices were coupled to Teflon-wrapped LYSO crystals
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A small PET scanner is under development at the University of Pisa using Silicon Photomultipliers (SiPM) matrices as a photodetectors, fabricated at Fondazione Bruno Kessler (FBK). In this paper, we report on the first characterization of... more
A small PET scanner is under development at the University of Pisa using Silicon Photomultipliers (SiPM) matrices as a photodetectors, fabricated at Fondazione Bruno Kessler (FBK). In this paper, we report on the first characterization of very large monolithic SiPMs matrices. The matrices feature 8 × 8 elements with a pitch of 1.5 mm. The elements are read out at the edges of the silicon die. We electrically characterized these devices at the wafer level by means of an automatic test procedure, consisting of current-voltage curves in forward and reverse bias. These tests allowed the selection of functioning devices and the evaluation of the uniformity of breakdown voltage and quenching resistance. Then, we performed first functional tests coupling the SiPM matrix to a slab of LYSO scintillator crystal. Finally, we measured the energy and spatial resolution exciting the detector with a 22Na source.
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AbstractDue to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution and reduced material budget, thin substrates are one of the possible choices to provide radiation hard... more
AbstractDue to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics ...
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ABSTRACT The ways of increasing the radiation hardness of silicon were considered. It was then experimentally shown that a preliminary irradiation of the bulk silicon introduces sinks for radiation defects that leads to an increased... more
ABSTRACT The ways of increasing the radiation hardness of silicon were considered. It was then experimentally shown that a preliminary irradiation of the bulk silicon introduces sinks for radiation defects that leads to an increased radiation hardness of the silicon. Neutron transmutation doping of silicon can be considered as one form of preliminary radiation. It was shown that for neutron transmutated silicon the carrier removal rate in NTD after γ-irradiation is more than one order of magnitude smaller than in a standard reference specimen, but the carriers removal rate after neutron irradiation is approximately a factor of two less.
ABSTRACT We show that a triple-junction photosensor can been obtained within a CMOS n-well technology with no additional process steps but a simple layout modification of the p-channel-stop mask. Results from the electrooptical... more
ABSTRACT We show that a triple-junction photosensor can been obtained within a CMOS n-well technology with no additional process steps but a simple layout modification of the p-channel-stop mask. Results from the electrooptical characterisation of a specially designed test chip proved that the wavelength selectivity of the sensor can be used for colour detection and confirmed the device full compatibility with CMOS technology.
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ABSTRACT To cope with the unprecedented high radiation level at the luminosity up-grade of the LHC (sLHC), novel tracking detectors are investigated. Among these, 3D silicon detectors constitute a promising option. By etching columnar... more
ABSTRACT To cope with the unprecedented high radiation level at the luminosity up-grade of the LHC (sLHC), novel tracking detectors are investigated. Among these, 3D silicon detectors constitute a promising option. By etching columnar electrodes of both doping types into the sensor, the distance for depletion and charge collection is decoupled from the sensor thickness. Thus, two of the main effects of radiation damage in silicon (increasing depletion voltage and trapping) can be significantly reduced. Since the process technology of 3D is very challenging, modified designs, such as 3D-DDTC detectors (double-sided, double type column), are under investigation. Preliminary results of test beam measurements performed at the CERN SPS with 3D-DDTC strip detectors produced by FBK-IRST in Trento, Italy, are presented.