Silicon Detectors for the sLHC Ulrich Parzefall on behalf of the RD50 Collaboration [This abstract was submitted under my name for the RD50 speaker’s bureau. The actual speaker remains to be chosen by the speaker’s bureau in due time] It is foreseen to significantly increase the luminosity of the Large Hadron Collider (LHC) at CERN around 2018-2020 by upgrading the LHC towards the sLHC (Super-LHC). Due to the radiation damage limitations of the silicon detectors presently used, they can not continue to operate at the sLHC. Therefore the physics experiments will require new tracking detectors for sLHC operation. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Collected Charge [103 electrons] Within the CERN RD50 Collaboration, a massive R&D programme is underway to develop silicon sensors with sufficient radiation tolerance. One R&D topic is to gain a deeper understanding of the connection between the macroscopic sensor properties such as radiation-induced increase of leakage current, doping concentration and trapping, and the microscopic properties at the defect level. We also study sensors from p-type silicon, which have a superior radiation hardness as they collect electrons instead of holes, exploiting the lower trapping probability of the electrons due to their higher mobility. Another sensor option under investigation is to use silicon produced with the Czochralski-process. The high oxygen content in the Czochralski-Silicon has been shown to have a beneficial influence on some of the radiation effects. A further area of activity is the development of advanced sensor types like 3D silicon detectors designed for the extreme radiation levels of the sLHC. These detectors in general have electrodes in the form of columns etched into the silicon bulk, which provide a shorter distance for charge collection and depletion, which reduces trapping and full depletion voltage. We will present tests of several detector technologies and silicon materials at radiation levels corresponding to sLHC fluences. For irradiated detectors from different manufacturers, we have observed indication of charge-multiplication effects at high bias voltages, which would increase the signal available after severe irradiation. Based on our results, we will give recommendations for the silicon detectors to be used at the different radii of sLHC tracking systems. Figure 1 shows a summary of test results for irradiated silicon strip detectors, indicating a high radiation tolerance of p-type sensors at high bias voltages. n-in-p-Fz (1700V) 25 20 FZ Silicon Strip Sensors n-in-p (FZ), 300μm, 500V, 23GeV p n-in-p (FZ), 300μm, 500V, neutrons n-in-p (FZ), 300μm, 500V, 26MeV p n-in-p (FZ), 300μm, 800V, 23GeV p n-in-p (FZ), 300μm, 800V, neutrons n-in-p (FZ), 300μm, 800V, 26MeV p n-in-p (FZ), 300μm, 1700V, neutrons p-in-n (FZ), 300μm, 500V, 23GeV p p-in-n (FZ), 300μm, 500V, neutrons n-in-p-Fz (800V) 15 10 5 p-in-n-FZ (500V) 1014 5 1015 Φeq [cm-2] n-in-p-Fz (500V) 5 1016 Fig. 1: Collected charge as function of 1 MeV neutron equivalent fluence for 23 GeV proton, 26 MeV proton and reactor neutron irradiated silicon ministrip sensors.