SRINIVASA INSTITUTE OF TECHNOLOGY & SCIENCE

(Approved By AICTE, New Delhi & Affiliated to JNTU, Anantapuram, A.P)

Chennai–Hyderabad Bypass Road, Ukkayapalli, Kadapa, A.P – 516002

(23A04302P) ELECTRONIC DEVICES AND CIRCUITS

LAB MANUAL
II B.Tech(ECE) - ISemester 2025-2026
 (23A04302P) ELECTRONIC DEVICES&CIRCUITS LAB
LIST OF EXPERIMENTS (Execute any 10 experiments).

1. Verify various clipping and clamper circuits using PN junction diode and draw the suitable graphs.
2. Study and draw the Volt Ampere characteristics of UJT and determine η, IP, Iv, VP, &Vv from the experiment.
3. Verification of the input and output characteristics of BJT in Common Emitter configuration experimentally and
find required parameters from the graphs.
4. Study and draw the input and output characteristics of BJT in Common Base configuration experimentally and
determine required parameters from the graphs.
5. Verification of the input and output characteristics of BJT in Common Collector configuration experimentally and
find required parameters from the graphsStudy and draw the V- I characteristics of JFET experimentally.
6. Study and draw the output and transfer characteristics of MOSFET (Enhance mode) in Common Source
Configuration experimentally. Find Threshold voltage (VT), gm, & K from the graphs.
7. Study and draw the output and transfer characteristics of MOSFET (Depletion mode) or JFET in Common Source
Configuration experimentally. Find IDSS, gm, & VP from the graphs.
8. Design and analysis of voltage- divider bias/self-bias circuit using BJT.
9. Design and analysis of self-bias circuit using MOSFET.
10. Design a suitable circuit for switch using MOSFET/BJT.
11. Design a small signal amplifier using MOSFET (common source) for the given specifications. Draw the frequency
response and find the bandwidth.
12. Design a small signal amplifier using BJT(common emitter) for the given specifications. Draw the frequency
response and find the bandwidth.
 ECE DEPT VISION&MISSION PEOs and PSOs
Vision
To produce highly skilled,creative and competitive Electronics and Communication Engineers to meet
the emergingneeds of the society.

Mission
 ImpartcoreknowledgeandnecessaryskillsinElectronicsandCommunicationEngineering
throughinnovative teaching and learning.
 Inculcatecriticalthinking, ethics,lifelonglearningandcreativityneededforindustryandsociety
 Cultivatethestudentswithall-roundcompetencies,forcareer,highereducationandself- employability

I. PROGRAMME EDUCATIONAL OBJECTIVES(PEOS)

PEO1: Graduates apply their knowledge of mathematics and science to identify, analyzeand
solve problems in the field of Electronics and develop sophisticated communication
systems.

PEO2: Graduates embody a commitment to professional ethics, diversity and social

awareness in theirprofessional career.

PEO3: Graduatesexhibitadesire forlife-long learningthroughtechnicaltrainingand

professionalactivities.

II. PROGRAM SPECIFICOUT COMES(PSOS)

PSO1: Apply the fundamental concepts of electronics and communication engineering to

design a variety of components and systems for applications including signal
processing, image processing, communication, networking, embedded systems,VLSI
and control system

PSO2: Select and apply cutting-edge engineering hardware and software tools to solve
complex Electronics and Communication Engineering problems.
III. PROGRAMME OUTCOMES (PO’S)
1. Engineering knowledge: Apply the knowledge of mathematics, science, engineering
fundamentals, and anengineering specialization to the solution ofcomplex engineering problems.
2. Problem analysis: Identify, formulate, review research literature, and analyze complex
engineering problems reaching substantiated conclusions using first principles of mathematics,
natural sciences, and engineering sciences.
3. Design/development of solutions: Design solutions for complex engineering problems and
design system components or processes that meet the specified needs with appropriateconsideration
for the public health and safety, and the cultural, societal, and environmental considerations.
4. Conduct investigations of complex problems: Use research-based knowledge and research
methods including design of experiments, analysis and interpretation of data, and synthesis of the
information to provide valid conclusions.
5. Modern tool usage: Create, select, and apply appropriate techniques, resources, and modern
engineering and IT tools including prediction and modeling to complex engineering activities with
an understanding of the limitations.
6. The engineer and society: Apply reasoning informed by the contextual knowledge to assess
societal, health, safety, legal and cultural issues and the consequent responsibilities relevant to the
professional engineering practice.
7. Environment and sustainability: Understand the impact of the professional engineering
solutions in societal and environmental contexts, and demonstrate the knowledge of, and need for
sustainable development.
8. Ethics: Apply ethical principles and commit to professional ethics and responsibilities and
norms of the engineering practice.
9. Individual and team work: Function effectively as an individual, and as a member or leader in
diverse teams, andin multidisciplinary settings.
10. Communication: Communicate effectively on complex engineering activities with the
engineering community and with society at large, such as, being able to comprehend and write
effective reports and design documentation, make effective presentations, and give and receiveclear
instructions.
11. Project management and finance: Demonstrate knowledge and understanding of the
engineeringand management principlesandapplythesetoone’sownwork, asamemberand leader in a
team, to manage projects andin multidisciplinary environments.
12. Life-long learning: Recognize the need for, and have the preparation and ability to engage in
independent and life-long learning in the broadest context oftechnological change.

IV. COURSEOBJECTIVES

 Toverifythetheoreticalconceptspracticallyfromalltheexperiments
 ToanalyzethecharacteristicsofDiodes, BJT,MOSFET,UJT.
 ToanalyzethecharacteristicsofMOSFET,UJT.
 Todesigntheamplifiercircuitsfromthegivenspecifications.
 ToModeltheelectroniccircuits usingtoolssuchasPSPICE/Multisim
 V.COURSEOUTCOMES

Afterthecompletion ofthecoursestudentswillbeableto

Course CourseOutcomestatements BTL

Outcomes
Understandthebasiccharacteristicsandapplicationsofbasicelectronic devices.
CO1 (L1) L

Observethecharacteristicsofelectronicdevicesbyplottinggraphs. (L2)
CO2 L

CO3 AnalyzetheCharacteristicsof UJT,BJT,MOSFET(L3). L

DesignMOSFET/BJTbasedamplifiersforthegiven specifications. (L4)

CO4 L

CO5 SimulateallcircuitsinPSPICE/Multisim.(L5). L

VI.COURSEMAPPINGWITH PO’SANDPEO’S
CourseTitle
PO PO PO PO PO PO PO PO PO PO PO PO PSO PSO
1 2 3 4 5 6 7 8 9 10 11 12 1 2
Electronic
Devices and
CircuitsLab 2.2 2.6 1.8 2.2 2.4 2.4 2.2 2.0 2.6 2.2 2.0 2.2 2.2 2.2

VII.MAPPING OFCOURSEOUTCOMESWITHPEO’SAND PO’S

Course PO PO PO PO PO PO PO PO PO PO PO PO PSO PSO

Title 1 2 3 4 5 6 7 8 9 10 11 12 1 2
CO1 3 2 1 3 3 2 3 3 1 3 1 3 1
CO2 3 3 2 3 3 3 2 3 2 2 2 2 3
CO3 3 1 2 2 1 2 2 2 3 1 3 2 2
CO4 1 2 3 3 2 3 1 3 2 2 2 1 2
CO5 3 1 3 1 3 1 2 2 3 2 3 3 3
EDCLab’sManual R24 Index

INDEX

SL. Page
NameoftheExperiment
No. No.
1 Clipping and Clampingcircuits 27
2 JFET Characteristics–Common Source configuration
37
3 BJT Characteristics-Common Emitter configuration
43

4 BJT Characteristics-CommonBase configuration

51
5 UniJunction Transistor(UJT) Characteristics
57

6 Voltage Divider bias circuit using BJT 63

7 Voltage Divider bias circuit using JFET

67

8 BJT as a Switch 73
9 BJT-CE Amplifier 77
10 CommonCollectorAmplifier 93
EDCLab’smanual Clipping&Clamper Circuits

EXP:1 CLIPPING AND CLAMPER CIRCUITS

AIM:Toverifythe variousclippingandclamping circuitsusingPN junctiondiode inHardwareaswell Using

multisim software
APPARATUS:
1). Regulatedpowersupply-----------------------------------------------------------------------1No.
2). Functiongenerator----------------------------------------------------------------------------1No.
3). CahodeRayOscilloscope(CRO)-------------------------------------------------------------1No.
4). SystemwithMultisimsoftware---------------------------------------------------------------1No.
COMPONENTS:
1). PNjunctiondiode: 1N4007
2). Carbonfixed resistors10 Ω,½W,10KΩ,½W----------------------------------------------Each1No.

THEORY:

DiodeClippers:
Most ofthe electronic circuits like amplifiers, modulators and many others have a particular range of
voltages at which they have to accept the input signals. Anyofthe signals that have an amplitude greater
thanthisparticular range maycausedistortions intheoutputoftheelectroniccircuitsand mayevenleadto damage
of the circuit components.
Asmostoftheelectronicdevicesworkonasingle positivesupply,the input voltagerangewould also be
onthe positive side. Since the naturalsignals like audio signals, sinusoidalwaveformsand many others
contain both positive and negative cycles with varying amplitude in their duration.
Thesewaveformsandothersignalshaveto be modified insuchawaythatthesinglesupply electronic
circuits can be able to operate on them.
Theclippingofawaveformisthe most commontechniquethat appliestotheinput signalstoadapt themso
that they may lie within the operating range ofthe electronic circuits. The clipping ofwaveforms can be done
by eliminating the portions of the waveformwhich crosses the input range of the circuit.
Clipperscanbebroadlyclassifiedintotwobasictypesofcircuits. Theyare:
 SeriesClippers
 ShuntorParallelClippers
Seriesclippercircuit containsa powerdiode inserieswiththe loadconnectedattheendofthecircuit. The shunt
clipper contains a diode in parallel with the resistive load.

Dept.ofECE,SRTSEngg. College-KADAPA
EDCLab’smanual Clipping&Clamper Circuits

CIRCUITDIAGRAM :

PROCEDURE:
1). Connectedthecircuitasshowninthecircuitdiagramoffigure(a)
2). SwitchedONtheFunctiongeneratorandCRO.
3). Setthesinewaveas10Vp-pinthefunctiongenerator.
4). ObservedthewaveformsintheCROanddrawinthegraphsheets.
5). Repeatedthesameprocedureforcircuitdiagramsoffiguresfrombtoh.
6). RepeatedthesameprocedureusingMultisim software.

Dept.ofECE,SRTSEngg. College-KADAPA
 EDCLab’smanual Clipping&Clamper Circuits

EXPECTEDWAVEFORMS:

RESULT :We have observed and drawn the output and input wave formsof different types of Clippers and
Clampers

Dept.ofECE,SRTSEngg. College-KADAPA
EDCLab’smanual JFETCS Config.

EXP:2 JFET COMMON SOURCE CONFIGURATION

AIM:
1). Tostudythestatic andtransfercharacteristicsoftheFETusingHardwareandmultisimsoftware
2). To calculatethefollowingFETparameters
( a).Drainresistance(rd) (b).Transconductance(gm)(c).Amplificationfactor(µ)
(d)Pinch-offvoltage(VP).
APPARATUS:

1). Voltmeters: (0-2)V Digital DCType---------1 No.

(0-50)V Digital/Analog DCType---------1 No.
2). Ammeters: (0-20)mA Digital/Analog DCType---------1 No.
3). RegulatedPowerSupply( RPS) :30V,1A Dualchannel -----1No.
4). Breadboard: -----1No.
5). Connectingwires: -----AfewNos.
6). Systemwithmultisimsoftware -----1No.
COMPONENTS:
1). FieldEffectTransistor(FET): BFW11/BF245 -----1No.
2).Carbon fixed resistors 22Ω,½Wand 1KΩ,½W -----Each1No.

THEORY: The Field Effect Transistor or Simply FET uses the voltage that is applied to their input
terminal, called the Gateto controlthe current flowing throughthemresulting inthe output current being
proportional to the input voltage, the Gates to source junction of the FET is always reversed biased. As their
operation relies on an electric field (hence the name field effect) generated by the input Gate voltage, this
then makes the Field Effect Transistor a “VOLTAGE” operated device.

The Field Effect Transistor is a three terminal unipolar semiconductor device that has very similar
characteristicstothoseoftheir Bipolar Transistorcounterpart’si.e., highefficiency, instant operation, robust and
cheap and can be used in most electronic circuit applications to replace their equivalent bipolar junction
transistors (BJT).
The Field Effect Transistor has one major advantage over its standard bipolar transistor, inthat input
impedance, (Rin) is very high, (thousands of Ohms). This very high input impedance makes them very
sensitive to input voltage signals.
There are two basic configurations of junction field effect transistor, the N-channel JFET and the P-
channel JFET. The N-channel JFET’s channel is doped with donor impurities meaning that the flow of
current through the channel is negative (hence the term N-channel) in the form of electrons.
A FET is a three terminal device, having the characteristics of high input impedance and less noise,
the Gate to Source junction of the FET is always reverse biased.
Inamplifier application, theFETisalwaysusedintheregionbeyondthepinch-off.

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’smanual JFETCS Config.

CIRCUITDIAGRAM :

PROCEDURE:
A). Transfercharacteristics:
1). Connectedthecircuitasperthecircuitdiagram.
2). SwitchedONtheRPSand allthemeters.
3). KepttheVDSvoltageatconstant2Vbyvaryingthe drainforwardvoltagei.e.VDD.
4). Variedthegatereverse voltageVGGinstepsof0.00V, 0.40V, 0.80V,1.2V, 1.6V,2.0Vandnoted down
the corresponding readings of VGSand ID meters.
5). Nowkeptthe VGGis at0V.
6). Repeatedthe same procedurefromstep4tostep5forVDS=4Vbyvariedthe VDD.
7). SwitchedOFFtheRPSandallthemeters.
8). PlottedthegraphbetweenVGSonX-axis andIDonY-axis.
9). Calculatedthetransconductancevalue fromthegraphaspertheformulawhich isgivenunderthe heading
of parameters.
Note:Donotvarythe supplyvoltage VDDunlessVGGiskeptat 0Volts.
10). Wedidthesameexperiment inmultisimsoftwarealso andnoteddownthecorrespondingreadingsin the
tabular column (A ).
B). Static/Draincharacteristics:
1). Connectedthecircuitasshowninthecircuitdiagram.
2). NowSwitchedONtheRPS andallthemeters.
3). KepttheVGS=0Vbyvarying thesupplyvoltageVGG.
4). Varied the supply voltage VDDin steps of 0.0V, 0.50V, 1.0V, 2.0V, 4.0V, 6.0V,8.0V, 10.0V, 12.0V,
14.0V, 16.0V,18.0V, 20.0V,24.0V, 28.0V, 30.0Vand noteddownthe correspondingreadingsofVDSand
ID meters.
5). Nowkeptthe VDDis at0V.
6). Repeatedthesameprocedurefromsteps4to5foreachtimeindependentlywhenVGS=-0.5V&VGS=-01.00V
by varying the VGG.
7). Nowswitched OFFtheRPS and allthemeters.
Note:Donotvarythe supplyvoltage VGGunlessVDDiskeptat 0Volts.
8). PlottedthegraphbetweenVDSonX-axisandIDonY-axis.
9). Calculatedthe drainresistance value fromthegraphand amplificationfactorasperthe
formulas which are given under the heading of parameters.
10). Wedidthesameexperiment inmultisimsoftwarealso andnoteddownthecorrespondingreadingsin the
tabular column (B).

Dept.ofECE,SRTSEngg.College-KADAPA
 EDCLab’smanual JFETCS Config.

TABULARCOLUMNS:
A). TransferCharacteristics:
Using Hardware UsingSoftware
SL. VGG VDS= 2V VDS= 4V VDS= 2V VDS= 4V
No. (V) VGS(V) ID(mA) VGS(V) ID(mA) VGS(V) ID(mA) VGS(V) ID(mA)
01 0

02 0

03 0

04 0

05 0

06 0

B). Static/DrainCharacteristics:
Using Hardware Using Software

SL. VDD VGS=0V VGS=0.5V VGS=1V VGS=0V VGS=0.5V VGS=1V

VDS(V) D(mA) VDS(V) D(mA) VDS(V) D(mA) VDS(V) D(mA) VDS(V) D(mA) VDS(V) D(mA)
No. (V)
01 00.00
02 00.50
03 01.00
04 02.00
05 04.00
06 06.00
07 08.00
08 10.00
09 12.00
10 14.00
11 16.00
12 18.00
13 20.00
14 24.00
15 28.00
16 30.00

Dept.ofECE,SRTSEngg.College-KADAPA
 EDCLab’smanual JFETCS Config.

EXPECTEDGRAPHS:
A). Transfercharacteristics: B).Static/draincharacteristics:

PARAMETERS:
1). Tranconductance(gm)= ID/ VGS AtVDSisconstant.
=

(Calculatedfromtransfercharacteristics curve)

2). Drainresistance(rd) = VDS/ ID AtVGSisconstant.

=

(Calculatedfromstatic/draincharacteristicscurve)

3). Amplificationfactor(gm)=Drainresistance(rd)× Tranconductance(gm).

=
4). PinchoffVoltage (VP) =

RESULT:
Thetransferandstatic/draincharacteristicsareobserved.Theparameters drainresistance (rd),trans
conductance (gm) and amplification factor (µ) are calculated.

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’smanual CEConfig.

EXP:3 BJT COMMON EMITTER (CE) CONFIGURATION

AIM:Toobtainthe input andoutputcharacteristicsoftransistorin CommonEmitter

ConfigurationusingHard ware and multisim software

APPARATUS:

1). Voltmeters: (0–2)V Digital DCType -------1No.

(0–50)V Digital/Analog DCType -------1 No.
2).Ammeters: (0–20)mA Digital/Analog DCType -------1 No.
(0–2000)µA Digitalonly DCType -------1No.
3).Regulated PowerSupply(RPS ): (0-30)V,1A Dualchannel --------1No.
5).Breadboard : --------1No.
5).Connectingwires: --------AfewNos.
6).Systemwithmultisim :
COMPONENTS:
1).Transistor: BC547 -------- 1 No.
2)Carbonfixedresistors a).1KΩ,½W -------- 1 No.
b).33KΩ, ½W -------- 1 No.

THEORY:
The transistor is a two junction, three terminalsemiconductor device which has three regions namely
the emitter region, the base region, and the collector region. There are two types of transistors. An npn
transistor has an n type emitter, a p type base and an n type collector while a pnp transistor has a p type
emitter, an n type base and a p type collector. The emitter is heavily doped, base region is thin and lightly
doped and collector is moderatelydoped and is the largest. The current conduction in transistors takes place
due to both charge carriers- that is electrons and holes and hence they are named Bipolar JunctionTransistors
(BJT).
BJTs are used to amplify current, using a small base current to control a large current between the
collector and the emitter. This amplification is so important that one ofthe most noted parameters of gain, β
(or hFE), which is the ratio of collector current to base current. When the BJT is used with the base and
emitterterminalsasthe input and thecollector and emitterterminalsastheoutput,thecurrent gainas wellas the
voltage gain is large. It is for this reason that this common-emitter (CE) configuration is the most useful
connection for the BJT in electronic systems
Operation regions and characteristics curves: Depending upon the biasing of the two junctions,
emitter-base (EB) junctionand collector base(CB) thetransistor is saidtobein one of thefour modes of operation. as
described below:

Operating B-E B-C

Features
region Junction Junction
Cut-off Reverse Reverse IB≈IC≈IE≈0 Offstate –nocurrent(VBE<0.7V)
Conducting
Saturation Forward Forward VBE=0.7V VCE ≈0.2V
structure
AmplifierGain:
Active Forward Reverse (IC=βIB) VBE=0.7V VCE>0.2V
100-1000
Limiteduse
Reverseactive Reverse Forward (IB>IC)
Gain<1

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’smanual CEConfig.

NOTE:VBEwillvaryfrom0.6to0.7V
The most important characteristics of transistor in any configuration are input and output
characteristics. A. Input Characteristics: ‐ It is the curve between input current IB and input voltage VBE
constant collector emitter voltage VCE. The input characteristic resembles a forward biased diode curve.
After cut in voltage the IB increases rapidly with small increase in VBE. It means that dynamic input
resistance is small in CE configuration. It is the ratio of change in VBE to the resulting change in base
current at constant collector emitter voltage. It is given by ΔVBE / ΔIB B. Output Characteristics: ‐ This
characteristic shows relation between collector current IC and collector voltage for various values of base
current. The change in collector emitter voltage causes smallchange in the collector current forthe constant
base current, which defines the dynamic resistance and is given as ΔVCE / ΔIC at constant IB. The output
characteristic of common emitter configuration consists of three regions: Active, Saturation and Cut‐off

Active region: In this region base‐emitter junction is forward biased and base‐collector junction is reversed
biased. The curves are approximately horizontal in this region.

Saturationregion:Inthisregionboththejunctionsareforward biased.

Cut‐off : In this region, both the junctions are reverse biased. When the base current is made equal to zero,
thecollectorcurrent isreverse leakagecurrent ICEO.TheregionbelowIB=0isthecalledthecutoffregion.
CIRCUITDIAGRAM :

PROCEDURE:
A). Inputcharacteristics:
1). Connectedthecircuitasshowninthecircuitdiagram.
2). NowSwitchedONtheRPS andallthemeters.
3). KepttheVCE=0VbyadjustedtheVCC.
4). VariedthesupplyvoltageVBBinstepsof0.0V, 0.50V, 1V,2V,4V,6V,8V, 10V, 15V,20V,25V, 30V
and noted down the corresponding readings of VBEand IBthe meters.
5). KepttheVBBat0V.
6). Repeatedthe same procedure fromsteps4to 5foreachtime independentlywhenVCE= 1V & VCE=
2V which are kept by varying theVCC.
Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’smanual CEConfig.

7). Nowswitched OFFtheRPSand allthemeters.

8). 8).Tookcarethat
a).
ThevaluesofVBEwhenVCE=1VaregreaterthanthevaluesofVBEwhenVCE=0V from
5threading onwards in the tabularcolumn.
b).
ThevaluesofVBEwhenVCE=2VaregreaterthanthevaluesofVBEwhenVCE=1V from
5threading onwards in the tabularcolumn.
9). PlottedthegraphbetweenVBEonX-axisandIBonY-axis.
Note:DonotvarythesupplyvoltageVCCunlessVBBiskeptat0Volts.

10). Wedidthesameexperiment in multisimalso,andnoted downthecorrespondingvaluesintabularcolumn(A).

B). Outputcharacteristics:
1). Connectedthecircuitasshowninthecircuitdiagram.
2). NowSwitchedONtheRPS andallthemeters.
3). KepttheIB=20µAbyvarying the supplyvoltageVBB
4). VariedthesupplyvoltageVCCinsteps0.0V,0.50V,1V,2V,4.V, 6.V,8.V,10V,15V,18V,20V, 22V,
24V, 26V, 28V, 30V and noteddown the corresponding readings of VCEand meters.
5). Nowkeptthe VCCat0V.
6). Repeatedthesameprocedurefromsteps4to 5foreachtime independentlywhenIB=40µA&
IB=40µA which are kept by varying theVBB.
7). Nowswitched OFFtheRPSand allthemeters.
8). Tookcare that,
a).
ThevaluesofICwhenIB=40µAaregreaterthanthe valuesofICwhenIB=20µAfrom 5threading
onwards in the tabularcolumn.
b).
ThevaluesofICwhenIB=40µAaregreaterthanthe valuesofICwhenIB=60µA. from
5threading onwards in the tabularcolumn.
9). Plottedthe graphbetween VCEonX-axisandIConY-axis.
Note:DonotvarythesupplyvoltageVBBunlessVCCiskeptat0Volts.
10). Wedidthesameexperimentinmultisimalso,andnoted downthecorrespondingvaluesintabularcolumn(B).

Dept.ofECE,SRTSEngg.College-KADAPA
 EDCLab’smanual CEConfig.

TABULARCOLUMNS:
A). InputCharacteristics:

UsingHardware UsingSoftware

SL. VBB(V) VCE=0V VCE=1V VCE=2V VCE=0V VCE=1V VCE=2V

No.
VBE(V) B(µA) VBE(V) B(µA) VBE(V) B(µA) VBE(V) B(µA) VBE(V) B(µA) VBE(V) B(µA)

1 0.0
2 0.5
3 1.0
4 2.0
5 4.0
6 6.0
7 8.0
8 10.0
9 15.0
10 20.0
11 25.0
12 30.0

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’smanual CEConfig.

B). OutputCharacteristics:

UsingHardware UsingSoftware

SL. VCC IB=20µA/ IB=40µA/ IB=60µA/ IB=20µA/ IB=40µA/ IB=60µA/

No. (V) (0.02mA) (0.04mA) (0.06mA) (0.02mA) (0.04mA) (0.06mA)
VCE IC(m VCE IC(m VCE IC(m VCE IC(m VCE IC(m VCE IC(m
(V) A) (V) A) (V) A) (V) A) (V) A) (V) A)
1 0.0
2 0.5
3 1.0
4 2.0
5 4.0
6 6.0
7 8.0
8 10.0
9 15.0
10 18.0
11 20.0
12 22.0
13 24.0
14 26.0
15 28.0
16 30.0

Dept.ofECE,SRTSEngg.College-KADAPA
 EDCLab’smanual CEConfig.

EXPECTEDGRAPHS:
A). Inputcharacteristicswith‘h’parameters:

B). Outputcharacteristicswith‘h’parameters:

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’smanual CEConfig.

PARAMETERS:
Commonemitter(CE)configuration:
1).
Inputimpedance(hie) =ΔVBE/ΔIB = HereVCEisconstant.
2).
Reversevoltagegain(hre)=ΔVBE/ΔVCE= HereIBisconstant.
Note:Theabovetwoparametersarecalculatedfrominputcharacteristics curve of
CE configuration.
3).
Outputadmittance(hoe) =ΔIC/VCE= HereIBisconstant.
4).
Forwardcurrentgain(hfe)= ΔIC/ΔIB= HereVCEisconstant.
Note:Theabovetwoparametersarecalculatedfromoutputcharacteristics curve of
CE configuration.
5).
Forwardvoltagegain =1/hre. =
6).
Outputresistance = 1/ hoe.=

RESULT :The input,outputcharacteristicsand‘h’parametersofatransistorinCommonEmitter

configurationare studied.

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’smanual CB Config.

EXP:4 BJT COMMON BASE CONFIGURATION

AIM:
Toobtainthe input andoutputcharacteristicsoftransistorin CommonBaseconfigurationusingHardware and
multisim software.

APPARATUS:

1).Voltmeters: a).(0–2)VDigital DCType ---------1No.

b). DMM Digital DCType ---------1No.
2).Ammetersa). (0–50)mA Digital/Analog DC Type ---------1 No.
b).(0-20)mA Digital DCType ---------1No.
3). Regulated PowerSupply(RPS):Dualchannel,(0-30)V,1A ---------1 No.
4). Breadboard ---------1 No.
5). Connectingwires: ---------AFewNos.
6). SystemwithMultisimsoftware ---------1 No.

COMPONENTS:
1). Transistor: BC547 ---------1No.
2). Carbonfixedresistors1KΩ,½W--------------2 No.

THEORY:

In this configuration we use base as common terminal for both input and output signals. The
configuration name itself indicates the common terminal. Here the input is applied between the base and
emitterterminalsand thecorresponding output signal istakenbetweenthebaseand collectorterminalswith
thebaseterminalgrounded. Herethe input parametersareVEBandIEandtheoutputparametersareVCBand IC. The
input current flowing into the emitter terminal must be higher than the base current and collector current to
operate the transistor, therefore the output collector current is less than the input emitter current.
The current gain is generallyequalor less than to unity for this type ofconfiguration. The input and
output signals are in-phase in this configuration. The amplifier circuitconfiguration ofthis type is called as
non-invertingamplifiercircuit.Theconstructionofthisconfigurationcircuit isdifficult becausethistype has high
voltage gain values.
The input characteristics of this configuration are looks like characteristics of illuminated
photodiode while the output characteristics represents a forward biased diode. This transistor configuration
has high output impedance and low input impedance. This type ofconfiguration has high resistance gain i.e.
ratioofoutputresistancetoinput resistance ishigh.Thevoltagegainforthisconfigurationofcircuit isgiven below.
AV=Vout/Vin=(IC*RL)/ (IE*Rin)
Currentgainincommonbaseconfigurationisgivenas
α=Outputcurrent/Inputcurrent α
= IC/IE
Thecommonbasecircuit ismainlyused insinglestageamplifiercircuits,suchasmicrophonepreamplifier orradio
frequencyamplifiers becauseoftheir high frequencyresponse. Thecommonbasetransistorcircuit is given
below.

Dept.ofECE,SRTSEngg.College-KADAPA
 EDCLab’smanual CB Config.
CIRCUITDIAGRAM :

PROCEDURE:
A). Inputcharacteristics:
1). Connectedthecircuitasshowninthecircuitdiagram.
2). NowSwitchedONtheRPS andallthemeters.
3). Keptthe VCB=0V byadjustedtheVCC.
4). VariedthesupplyvoltageVEEinstepsof0V,0.5V, 1V, 2V, 5V, 10V, 15V,20V,25V,30V and
noted down the corresponding readings of VBEand IEthe meters.
5). KepttheVEEat0V.
6). Repeatedthesameprocedurefromsteps4to 5for eachtime independentlywhenVCB=2V& VCB=
4V by varying theVCC.
7). Nowswitched OFFtheRPS and allthemeters.
8). Tookcare that,
a).
ThevaluesofVBEwhenVCB=2Varelesser thanthe valuesofVBEwhenVCB=0V from
5threading onwards in the tabularcolumn.
b).
ThevaluesofVBEwhenVCB=4Varelesser thanthe valuesofVBEwhenVCB=2V from
5threading onwards in the tabularcolumn.
9). PlottedthegraphbetweenVBEonX-axisandIEonY-axis.
Note:Donotvarythesupply voltageVCCunlessVEEiskeptat 0 Volts.
10). Wedidthesameexperimentinmultisimalso,andnoteddownthecorrespondingvaluesintabularcolumn(A).
B). Outputcharacteristics:
1). Connectedthecircuitasshowninthecircuitdiagram.
2). NowSwitchedONtheRPS andallthemeters.
3). KepttheIE=2mAbyvarying thesupply voltageVEE
4). VariedthesupplyvoltageVCCinsteps0V, 0.5V,1V,2V,5V,10V,15V,20V,25V,30Vandnoted down
the corresponding readings of VCBand ICmeters.
5). Nowkeptthe VCCat0V.
6). Repeatedthesame procedurefromsteps4to 5foreachtime independentlywhenIE=4mA&
IE=6mA by varying theVEE.
7). Nowswitched OFFtheRPS and allthemeters.8).Tookcarethat,
a).
ThevaluesofVCBwhenIE=4mAare lesser thanthe valuesofVCBwhenIE=2mAfrom
5threading onwards in the tabularcolumn.
b).
ThevaluesofVCBwhenIE=6mAare lesserthanthe values of
VCBwhen IE= 4mA from 5threading onwards in the

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’smanual CB Config.
tabularcolumn.

Dept.ofECE,SRTSEngg.College-KADAPA
 EDCLab’smanual CB Config.

c).
The values of ICwhen IE= 4mA are greater than the
valuesofICwhenIE=2mAfrom5threadingonwards in the
tabularcolumn.
d).
The values of ICwhen IE= 6mA are greater than the
valuesofICwhenIE=4mAfrom5threadingonwards in the
tabularcolumn.
9). Plottedthe graphbetweenVCBonX-axisandIConY-axis.
Note:Do notvarythe supply voltageVEEunlessVCCiskeptat0Volts.
10). Ididthesameexperimentinmultisimalso, andnoteddownthecorrespondingvaluesintabularcolumn(B).
TABULARCOLUMNS:
A). InputCharacteristics:
UsingHardware UsingSoftware

SL. VBB(V) VCB=0V VCB=2V VCB=4V VCE=0V VCE=2V VCE=4V

No.
VBE(V) (mA) VBE(V) (mA) VBE(V) E(mA) VBE(V) E(mA) VBE(V) E(mA) VBE(V) E(mA)

1 0
2 0.5
3 1
4 2
5 5
6 10
7 15
8 20
9 25
10 30

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’smanual CB Config.

B). OutputCharacteristics :

UsingHardware UsingSoftware

SL.No. IE=2mA IE=4mA IE=6mA IE=2mA IE=4mA IE=6mA

VCC
VCB IC(m VCB IC(m VCB IC(m VCB IC(m VCB IC(m VCB IC(m
(V) (V) A) (V) A) (V) A) (V) A) (V) A) (V) A)

1 0
2 0.5
3 1
4 2
5 5
6 10
7 15
8 20
9 25
10 30

EXPECTEDGRAPHS:

A). InputCharacteristics:

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’smanual–Sep-2021 CB Config. Page|55off49

B). OutputCharacteristics:

PARAMETERS:

B). Commonbase(CB)configuration:
1).
Inputimpedance(hib) =ΔVBE/ΔIE= HereVCBisconstant.
=
2).
Reversevoltagegain(hrb)=ΔVBE/ΔVCB= HereIEisconstant.
Note:Theabovetwoparametersarecalculatedfrominputcharacteristics curve
of CB configuration.
3).
Outputadmittance(hob) =ΔIC/VCB= HereIEisconstant.
4).
Forwardcurrentgain(hfb)=ΔIC/ΔIE = HereVCBisconstant.
Note:Theabovetwoparametersarecalculatedfromoutputcharacteristics curve
of CB configuration.
5).
Forwardvoltagegain =1 / hrb.=
6).
Outputresistance = 1/ hob=

RESULT :
TheinputandoutputcharacteristicsofatransistorinCommonBaseconfigurationarestudied

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’smanual UJTCha.

EXP:5 UNI JUCTION TRANSISTOR(UJT) CHARACTERISTICS

AIM:
1). Todrawthevoltampere/staticcharacteristicsof UJTusingHardwareaswellasMultisimsoftware
2). Todeterminethe Intrinsicstandofratio(η),Peakcurrent(IP), Valleycurrent(IV), Peakvoltage(VP), Valley
Voltage (VV)

APPARATUS:
1) RegulatedPowerSupply(RPS): (0-30)V DualChannel ---- 1No.
2) Voltmeters : (0-10)V Analog DCType ---- 1No.
3) Ammeters : (0-20)mA Digital DCType ---- 1No.
4) Breadboard : ---- 1No.
5) Connectingwires : ---- AfewNos.
6) Systemwithmultisimsoftware: ---- 1No.

COMPONENTS:
1).UJT2N2646 : ---- 1No.
2).Resistors1/2W : 2.2KΩ ---- 1No.

THEORY:

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only one junction. It
hasthreeterminals anemitter(E)andtwo bases(B1andB2). Thebase is formedbylightlydopedn-typebar of
silicon. Two ohmic contacts B1 and B2 are attached at its ends. The emitter is of p-type and it is heavily
doped. The resistance betweenB1 and B2, whenthe emitter is opencircuit is called interbase resistance. The
originalUJT, is a simple device that is essentially a bar of N type semiconductor material into which P type
material has been diffused somewhere along its length.

The UJT is biased with a positive voltage between the two bases. This causes a potential drop along
the length of the device. When the emitter voltage is driven approximately one diode voltage above the
voltage at the point where the P diffusion (emitter) is, current will begin to flow from the emitter into the
base region. Because the base region is very lightly doped, the additional current (actually charges in thebase
region) causes (conductivity modulation) which reduces the resistance of the portion of the base between the
emitter junction and the B2 terminal. This reduction in resistance means that the emitterjunction is more
forward biased, and so even more current is injected. Overall, the effect is a negative resistance at the emitter
terminal. This is what makes the UJT useful, especially in simple oscillatorcircuits. Whenthe emitter voltage
reaches Vp, the current startsto increase and the emitter voltage startsto decrease.

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’smanual UJTCha.
CIRCUITDIAGRAM :

PROCEDURE:
1). Connectionsaremadeasperthecircuitdiagram.
2). KepttheVBBat4VbyvaryingtheVBBi.e. Regulated PowerSupply(RPS).
3). ByvariedtheVEEIobservedthatinVEatonecertainpeak(max.)pointitissuddenlyfallenand
notedthetworeadingsofVEE, VE, IEat whichtheVEis falling just fromits maximumpoint &afterthe fallen,
in the tableform-1.
4). NowKept theVEEat0V.
5). ByvariedtheVEEinstepsi.e0V,2.6V,2.7V,2.8V,2.9V,3.0V,5.5V,5.6V,5.7V,5.8V,5.9V,6.0V,6.2V,
6.4V,10V,20V,30VIhavenoteddownthecorrespondingreadingsof VE,IEinto thetabularform-
6). Insertedthereadingswhichareavailableintabularform-1intothetabular form-2inascendingorder.
7). After completedoftakenthereadings,kepttheVEEat0V.
8). NowIhavekepttheVBBat8Voltsbyvarying VBBi.e.Regulated PowerSupply(RPS).
9). Repeatthesamestepsfrom3to7.
10). Aftercompletedoftakenthereadings,kepttheVEE&VBBat0V.
11). FinallyswitchedOFFtheRPSand allmeters.
12). PlottedthegraphbytakentheEmitter current IEonX–axisandEmitter voltage VEonY-axisusingthe readings
in tabular form – 2.
13). CalculatedtheNegativeresistanceandIntrinsicstandofratiofromthegraph, accordingto the
formulas,whicharegivenundertheheading ofPARAMETERS
14). Wedidthesameexperiment using multisimsoftware,noteddownthecorrespondingvaluesinthe tabular
form 1&2.

TABULARFORM-1: :

UsingHardware UsingSoftware
Heading VBB= 4Volts VBB= 8Volts VBB= 4Volts VBB= 8Volts
VEEin VE in IEin VEE VE in IEin VEEin VE in IEin VEEin VE in IEin
volts Volts mA in Volts mA volts Volts mA volts Volts mA
volts
1. Just before
themaxpoint
at which
suddenly
falleninVE
2. Just after
fallenfrom
max.
pointinVE

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’smanual UJTCha.
TABULARFORM-2:
UsingHardware UsingSoftware

VBB= 4Volts VBB= 8Volts VBB= 4Volts VBB= 8Volts

Sl.No VEEin VE in IEin VEEin VE in IEin VEEin VE in IEin VEEin VE in IEin
volts Volts mA volts Volts mA volts Volts mA volts Volts mA

Dept.ofECE,SRTSEngg.College-KADAPA
 EDCLab’smanual UJTCha.
EXPECTEDGRAPH:
Thefollowinggraphshows forUnijunctionTransistorCharacteristics.

PARAMETERS:

Note:ThetypicalvalueofIntrinsicstand offratiois0.51 to0.82

3. Peak current IP=
4. ValleycurrentIV =
5. PeakVoltage VP =
6. ValleyVoltage V=

RESULT:

We havedrawnthegraphfor voltamperecharacteristicsof UnijunctionTransistor.

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’sManual Voltg.DividrCkt.UsingBJT

EXP:6 VOLTAGE DIVIDER BIAS CIRCUIT USING BJT

AIM:
1).TodesigntheVoltagedividerbiascircuit usingBJTinHardwareandMultisimsoftware.
APPARATUS:
1).Regulatedpower supply(RPS) :(0-30)V,1ADualchannel ------ 1No.
2).Ammeter :(0-2000)µA Digital DC Type ------ 1No.
(0-20)mA Digital DC Type ------ 2No.
3).DigitalMultiMeter(DMM) : Digital ------ 1No.
4).BreadBoard : ------ 1No.
5).Connectingwires : ------ AfewNos.
6).SystemwithMultisim software : ------ 1No.

COMPONENTS:

1).Resistors1/2W : 100Ω,3.3KΩ,10KΩ,100KΩ ------ Each1No.

2).Bipolar JunctionTransistor(BJT): BC547-npn ------ 1No.

THEORY:

Voltage divider bias is the most popular and used way to biasa transistor. It uses a few resistors to
make sure that voltage is divided and distributed into the transistor at correct levels.

Voltage divider biasing is commonly used why? - Quora. Because Voltage divider biasing is beta-
independent and hence is more stable than any other biasing. The temperature will have no effect on Q-
point. Also as Voltage divider biasing always operates in the Active region, it's more commonly used.

Another configuration that can provide high bias stability is voltage divider bias. Instead of using a
negative supply offofthe emitter resistor, like two-supply emitter bias, this configuration returns the emitter
resistor to ground and raises the base voltage.

The resistors help to give complete control over the voltage and current that each region receives in
the transistor. And the emitter resistor, RE, allows for stability of the gain of the transistor, despite
fluctuations in the β values.

The disadvantage of using high value resistors in a voltage divider is it makes the output impedance
higher and hence makes the output voltage more sensitive to loading. Lets run some approximate numbers.
At audio frequencies we can regard a coaxial cable as a capacitor.

Voltage divider bias is the most popular and used way to bias a transistor. It uses a few resistors to
make sure that voltage isdivided and distributed intothe transistorat correct levels. One resistor,the emitter
resistor, RE also helps provide stability against variations in β that mayexist fromtransistorto transistor.

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’sManual Voltg.DividrCkt.UsingBJT

Design : Designavoltagedivider biascircuit usingSiNPNtransistor havingβ=360,VCC=10V,VCE= 6V,VBE=

0.75,IC= 1 mA

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’sManual Voltg.DividrCkt.UsingBJT

CIRCUITDIAGRAM :

PROCEDURE:
1). Connectedthecircuitaspershowninthecircuitdiagram.
2). KepttheRPSat 10VasVCC
3). Noteddownthecorrespondingvaluesinthetabular columnwhichareshowninmeters.
4). ByCompared thetheoreticaland practicalvaluesbotharesameapproximately.
5). KepttheRPSat 0Vand switchedoffallthemeters.
6). RepeatedthesameprocedureinMultisimsoftwarealso, andnoteddownthethecorresponding values in the
tabular column
RESULT :

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’sManual–Sep-2021 BJTasa Switch

EXP:7 BJT ACT AS ASWITCH

AIM:
TodesigntheSwitchwithself biasusingBJT.

APPARATUS:
1). Regulatedpowersupply(RPS) :(0-30)V,1A Dualchannel ------ 1No.
2). Ammeter :(0-2000)µA Digital DCType ------ 1No.
:(0-20)mA Digital DCType ------ 1No.
3).DigitalMultiMeter(DMM) : Digital ------ 1No.
4). BreadBoard : ------ 1No.
5). Connectingwires : ------ AfewNos.
6). SystemwithMultisimsoftware : ------ 1 No.
COMPONENTS:
1).Resistors1/2W : 1KΩ,400KΩ,1MΩ ------ Each1No.
2). BipolarJunctionTransistor(BJT) : BC547-npn ------ 1No.
3). Buzzer : ------ 1No.

THEORY:

Bipolar junctiontransistor (BJT) has three terminals and two junctions. The functionofthe transistor is
to amplify the signal. The three terminals of BJT are base, emitter and collector. BJT is either a PNP
transistor or NPN transistor based on the doping type of the three terminals. Using the transistor as a switch
is the simplest application of transistors.

How does a BJT act as a switch? A transistorhas three modes: active region, cut off region and the
saturation region. The transistor acts as a switch in the cut-off mode and the saturation mode. The transistor
is fully off in the cutoff region and fully on the saturation region. A transistor can also be used as a switch
since a small electric current flowing through one part of it can cause larger current flow through the other
part of the transistor.

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’sManual–Sep-2021 BJTasa Switch

Design:Designasuitablecircuit forswitchusing BJT,to ONbuzzer.ThedatasheetofBuzzer isgiven below,

VCCmax=12V,IC= 4mA,VBE=0.75V,βorhFE= 360.

PROCEDURE:
1). Connectedthecircuitaspershowninthecircuitdiagram.
2). KepttheRPSat 12VasVCC.
3). KeptRB=1KΩandnoteddownthecorrespondingvaluesinthetabularcolumn.
4). Repeatedthe aboveprocedurefromstep2to step 3 forRB=400KΩand 1MΩ.
5). Observedthat, at RB= 1KΩ and 400KΩ the BJT is biased why because the VBE>=0.75V and the ICvalue
ismoreatRB=1KΩascomparedto RB=400KΩ.AtthesetwoconditionstheBuzzer isswitched ON.
6). But BJTdidn’t biasat RB=1MΩwhybecausetheVBE<0.75VandIC=1.53mA.Thiscurrent wouldnot
sufficient to switched ON the Buzzer.
7). Repeated thesameprocedureinMultisimsoftwarealso, andnoteddownthethecorresponding values in the
tabular column

Dept.ofECE,SRTSEngg.College-KADAPA
 EDCLab’sManual–Sep-2021 BJTasa Switch

TABULARCOLUMN:

UsingHardware UsingSoftware

Sl.No. RBin VBEin VCEin IC in IE in IB in VBEin VCEin IC in IE in IB in

Ω Volts Volts Volts Volts Volts Volts Volts Volts Volts Volts
01 1KΩ
02 400KΩ
03 1MΩ
RESULT :

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’sManual BJT CC
Amplr.
EXP:8 BJT COMMON EMITTER (CE) AMPLIFIER
AIM:
1). ToobtainthefrequencyresponseofCommon Emitteramplifier.
2). To calculatetheband widthofthisamplifier.

APPARATUS:
1).Functiongenerator(FG) ---------1No.
2).CathodeRayOscilloscope(CRO) ---------1No.
3).RegulatedPowerSupply(RPS): (0-30)V,1A Dualchannel ---------1No.
4).Probes ---------1No.
5).Breadboard ---------1No.
6).Connectingwires: --------AfewNos.

COMPONENTS:
1). TransistorBC547

2) Carbonfixed resistors a). 100Ω,½W --------1No.

b). 3.3KΩ,½W ---------1 No.
c). 10 KΩ,½W ---------1 No.
d). 100 KΩ,½W ---------1 No.
3). Capacitorsa). 22µF --------2No.
b). 33µF --------1No.

THEORY:

This is one among the three configurations of these terminals. This configuration is the most widely
preferred one because it has both current and the voltage gains which produces the high power gain value.
When it operates in between cut-off and the region of saturation the transistor is said to be working asswitch.
In order to make function as amplifier it must be operating in the region that is active.

A transistor in which the emitter terminal is made common for both the input and the output circuit
connections isknownascommonemitterconfiguration. Whenthis configuration isprovided withthe supply of
the alternating current (AC) andoperated in between the both positive and the negative halves of thecycle in
order to generatethe specific output signal is known as common emitter amplifier.

In this type of configuration the input is applied at the terminal base and the considered output is to
be collected across the terminal collector. By keeping emitter terminal is common in both the cases of input
as well as output.
WorkingofCommon EmitterAmplifier
Let us considered a CE circuit is provided with the divider circuit of the voltage such that it is
provided with the two resistors connected at the input side. In this type of configuration the base is
considered to be the input terminal whereas the collector is for collecting the output.

Other than this there are various electronic components are to be included in this circuit. One is the
resistor R1 that is the one to make the transistor to function in the forward biasing mode. The R2 is
responsible to make the biasing possible. There is the load resistor and the resistor that is connected at the
emitter sothat it controls the stabilityrelated tothermalissue.The resistors R1 and R2 connected acrossthe

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’sManual BJT CC
Amplr.
terminalbaseasitistheinputside.Theloadresistorisconnectedattheoutputsidethatisacrossthe collector terminal.

There are capacitors as well in the circuit. The capacitorC1is atthe inputside and the capacitor C2 is
connected across the emitter resistor. The C1 capacitor is responsible to separate the value of the AC signals
fromthat ofDC signals. There exists the inverse relation between the R1 resistor and the biasing.

As R2 tends to increase the biasing tends to increase and vice-versa.Hence this is the reason it is
known as CE amplifier.

CIRCUITDIAGRAM:

PROCEDURE:

1). Connectedthecircuitasperthecircuitdiagram.
2). Removed the probe of CRO from output(O/P)sideandconnectedit atinput (I/P)sideto settheinput
signal i.e. sine wave having the value of 20mVp-p&1KHz.
3). Then switched ON the function generator and CRO;but don’ts witched ON the RPS.
4). NowKept theAC/GND/DCswitch isatACposition.
5). Now appliedthe input signali.e.sinewavebypressingthesinewave functionkeyinthe function
generator.
6). Initiallykeptthe1KHz.frequencyby varyingthefrequencycontrolinthefunctiongenerator.
7). Now appliedthepeakto peakamplitudeofasinewave isof20mV p-pbyvaryingtheamplitudecontrol in the
function generator through observing in the CRO.
8). Kept thisvalueofinput signalasconstant uptothecompletionoftheexperimentOtherwisethewrong output
would occurred.
9)Thenremoved theprobeofCRO fromtheinput sideandconnected itacrosstheoutputside.
10). NowswitchedONtheRPSandsetthe10Viniti.e. VCC=10V.
11). Varied the different frequency steps of5Hz, 10Hz, 20Hz, 50Hz, 100Hz, 500Hz, 1KHz,10KHz, 20KHz,
50KHz, 100KHz, 200KHz, 400KHz, 500KHz, 800KHz, 1MHz. byadjustedthe frequencycontrolin the
function generator and noted downthe corresponding values ofoutput signali.e. peak to peak amplitude
(voltage) of sine wave by observing in the CRO.
12). NowswitchedOFFthe RPS,functiongeneratorandCRO.

Dept.ofECE,SRTSEngg.College-KADAPA
 EDCLab’sManual BJT CC
Amplr.
13). Thencalculatedthe voltagegainAV= VO/Vi&gainindB =20log10(AV) andnoteddownthevalues in
thespecified columns ofthe tabular column.
14). Plottedthe graphs(frequencyresponse curves)asperbelow,
a). frequencyonX-axis &gainindB onY-axis.
b). frequencyonX-axis&voltagegainonY-axis.
15) Calculatedthebandwidthfromtheabovetwo(frequencyresponsecurves) graphsbyusingtheformula
f2–f1which isgivenundertheheadingofparameters.

TABULARCOLUMNS:

Input Voltage(Vi)=20mV/0.02Vforallreadingseitherin Softwareor

Hardware
Software Hardware
Sl. Freq- Output Voltage Gain Freq- Output Voltage Gain
No. uency Voltage gain indB uency Voltage gain indB
In (VO) AV = In (VO) AV= =
Hz/KHz InVolts = Vo/Vi 20log10( AV Hz/KH InVolts. Vo/Vi 20log10(
) z. AV)
1 20Hz. 0.4 20 26.02 20Hz. 0.3 15 23..52

2 100Hz. 0.8 40 32.04 100Hz. 0.7 35 30.88

3 200Hz. 1 50 33.97 200Hz. 0.9 45 33.06

4 1KHz. 1 50 33.97 1KHz. 0.9 45 33.06
5 20 1.4 70 36.90 200KHz. 1.3 65 36.25

6 40 3.4 170 44.6 400KHz. 4.0 200 46.02

7 60 4 200 41.02 600KHz. 4.0 200 46.02

8 80 4.2 210 46.44 800KHz. 4.0 200 46.02

9 1 4.2 210 46.44 1 MHz. 2 100 40.00

10 100MHz 4.2 210 46.44 100MHz ------- ------- -------

11 500MHz. 3.7 185 45.34 500MHz. ------- ------- -------
EXPECTEDGRAPHS:
A). Frequencyresponsecurvefor B).Frequencyresponsecurvefor
ForfrequencyversesgainindB. Forfrequencyversesvoltagegain.

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’sManual BJT CC
Amplr.

Dept.ofECE,SRTSEngg.College-KADAPA
EDCLab’sManual BJT CC
Amplr.

PARAMETERS:
1).Bandwidthoffrequencyresponsecurvefor
frequencyversesgainindB. = f2–f1=
2) Band widthoffrequencyresponsecurvefor
frequencyversesvoltagegain =f2–f1=

RESULT :
Wehaveobtained thefrequencyresponsecurvesof CommonEmitterAmplifier (CE)
forfrequencyversesgainindB &frequencyversesvoltagegainandcalculatedthebandwidthofbothof them.
The band width values are given below,
1).Bandwidthoffrequencyresponsecurveforfrequencyversesgain indB.=
2) Bandwidthoffrequencyresponsecurveforfrequency versesvoltagegain=
EDCLab’sManual BJT CC
Amplr.

EXP. NO:9

INPUT AND OUT PUT CHARACTERISTICS BJT(CC CONFIGURATION)

Aim:

Toobtaintheinputand outputCharacteristicsofCommonCollectorconfiguration

ApparatusandComponents Required:

S.No Nameofthe Apparatus Range/No/Type Quantity

1 Transistor BC107 1

2 Voltmeter 0-2V,0-30V Each1

3 Ammeter 0-500µA,0-30mA, Each1

4 DCPowerSupply(Dual) 0-30V 1

5 Breadboard 1

6 Resistors 1k,10k, Each1

7 ConnectingWires Asrequired

Theory:

ABJT is a three terminaltwo – junctionsemiconductor device inwhichthe conduction is due to

both the charge carrier. Hence itis a bipolar device and it amplifier the sine waveform as theyare
transferred from input to output. BJT is classified into two types – NPN or PNP. A NPN
transistor consists of two N types in between which a layer of P is sandwiched. The transistor
consistsofthreeterminalemitter,collector andbase. Theemitter layer isthesourceofthecharge
carriers and it is heartily doped with a moderate cross sectional area. The collector collects the
charge carries and hence moderate doping and large cross sectional area. The base region acts a
path for the movement of the charge carriers. In order to reduce the recombination of holes and
electrons the base region is lightly doped and is of hollow cross sectional area. Normally the
transistor operates with the EB junction forward biased.

In transistor, the current is same in both junctions, which indicates that there is a transfer of
resistance between the two junctions. One to this fact the transistor is known as transfer
resistance of transistor
EDCLab’sManual BJT CC
Amplr.

Inthisconfigurationweusecollectorterminalas commonfor bothinput andoutput signals. This

configurationisalsoknownasemitterfollowerconfigurationbecausetheemittervoltagefollows
EDCLab’sManual BJT CC
Amplr.

the base voltage. This configuration is mostly used as a buffer. These configurations are widely
used in impedance matching applications because of their high input impedance.

In this configuration the input signal is applied between the base-collector region and the output
is taken from the emitter-collector region. Here the input parameters are VBC and IB and the
output parameters are VEC and IE. The common collector configuration has high input
impedance and low output impedance. The input and output signals are in phase. Here also the
emitter current is equalto the sumofcollector current and the base current. Now let us calculate
the current gain for this configuration.

This common collector configuration is a non-inverting amplifier circuit. The voltage gain for
this circuit is less than unity but it has large current gain because the load resistor in this circuit
receives both the collector and base currents.

CircuitDiagram:

ModelGraph:

Input Characteristics:
EDCLab’sManual BJT CC
Amplr.

OutputCharacteristics:
EDCLab’sManual BJT CC
Amplr.

Tabulation:

InputCharacteristics:

VCE(V)= VCE(V)=
VCB(V) IB(μA) VCB(V) IB(μA)

OutputCharacteristics:

IB(μA)= IB(μA)=
VCE(V) IE(mA) VCE(V) IE(mA)
EDCLab Rules-Obv&Record Page|128off128

Procedure:

Input Characteristics:

1. Connectthecircuitasperthecircuitdiagram.
2. Set VCE= 5V, vary, VBE insteps of0.1V &note down the corresponding IBand repeat the above
procedure for 10V & so on.
3. Plotthegraph:VCBvsIBfor aconstantVCE.
4. Findtheh-parameters: hfc&hic.

OutputCharacteristics:

1. Connectthecircuitasperthecircuitdiagram.
2. SetIB=20μA,varyVCEinstepsof1V&notedownthecorrespondingIE.Repeatthe above procedure for
40μA,80μA & so on.
3. Plotthe graph: VCEvsICforaconstantofIB.
4. Findtheh-parameters:hoc&hrc.

Result:

ThusthestaticcharacteristicsoftransistorinCommonEmitter configurationstudied.

Dept.ofECE,SVREngg. College-Nandyal