Welcome to VIT Chennai
Dr. Gargi Raina VIT Chennai
M. Tech. VLSI (Fall 2020-21)
Course Code & Title:
ECE5018
Physics of VLSI Devices
Venue & Class Timings: Venue & Class Timings:
C1 SLOT C2 SLOT
Wed: 8:00-8:50 AM Wed: 2:00-2:50 AM
Thur: 9:00-9:50 AM Thur: 3:00-3:50 AM
Fri: 10:00-10:50 AM Fri: 4:00-4:50 AM
Instructor:
Dr. GARGI RAINA
Professor, SENSE
VIT University- Chennai Campus
Dr. Gargi Raina VIT Chennai
Dr. Gargi Raina
Education:
Ph.D. (Title: “Investigations of molecular clusters and other species
employing a cluster beam apparatus”)-J.N.C.A.S.R., Bangalore, India
under Prof. C.N. R. Rao and Prof. G. U. Kulkarni - 2004
M.S.- (Surface Science), Univ. of Hawaii-Manoa, Honolulu, USA--1991
M.Sc. (Physics), Delhi University, New Delhi, India -- 1986
Past Working Experience
• Professor @ Center for Nanotechnology Research, VIT Vellore ---------Since 2006
• Application Scientist- Digital Instruments/VEECO, Bangalore -----------2003-2006
• Project Associate- JNCASR, Bangalore ----------------1995-98
• Research Associate- HIG, University of Hawaii-Manoa, HAWAII-USA -----1991-94
Current Research Interest: Synthesis of Graphene, MoS2 and their hybrids towards Ink
Formulation for Printed Flexible Electronics for applications in Energy devices, Sensors, and
Antennas.
ONLINE Instruction
Platform for instruction: Microsoft teams
Code of Conduct: Need to be available on Audio & Video periodically
during the class; Properly Attired
Attendance: Be regular and attend full class (Random Poll question will be
circulated)
Quizzes: Will be conducted every week with one day prior notice for the
portions covered during the week
Class Representative: Volunteer (One Boy & One Girl)
Dr. Gargi Raina VIT Chennai
ONLINE COURSE
Course Title -Physics of VLSI Devices
Instructor: Dr. Gargi Raina,
Professor, School of Electronics Engineering
About the course:
This course will deal with fundamentals of semiconductors and physics of various
carrier current transport mechanisms required to understand the operation of
basic semiconductor devices such as PN Junction, MOS capacitors, and MOSFETs.
Basic mathematical formalism for the modeling of these devices will also be
covered. Exposure to short channel effects arising in VLSI and UDSM transistors
will also be provided.
Dr. Gargi Raina VIT Chennai
What is VLSI?
Computers
Transistor- MOSFET
Recent Devices
Smartphones Electric vehicles
AI-based Sensors / IoT
Dr. Gargi Raina VIT Chennai
Basic VLSI Devices
Dr. Gargi Raina VIT Chennai
What is the Materials used ?
Image Source: https://www.quora.com/What-is-the-difference-between-a-
semiconductor-conductor-and-superconductor
Dr. Gargi Raina VIT Chennai
Motivation
• To acquire in-depth comprehension of the basics of Semiconductor
Physics.
• To understand the underlying physics and principles of p-n junction
diodes, metal-oxide-semiconductor (MOS) capacitors, and MOS field
effect transistors (MOSFETs).
• To acquire in-depth understanding of FET devices that plays an
important role in fabrication of integrated circuits.
• An ability to work on state-of-the-art technology computer-aided
design (TCAD) simulation tools that are routinely used in all
semiconductor foundries.
Dr. Gargi Raina VIT Chennai
Syllabus
Course code Physics of VLSI Devices L T P J C
ECE 5018 3 0 0 0 3
Pre-requisite None Syllabus
version
v.1.1
Expected Course Outcome :
At the end of the course the student will be able to
1. design extrinsic semiconductors with specific carrier concentrations and, understand the
band structure and diagrams of semiconductors.
2. Calculate and model the carrier transport mechanism in semiconductors.
3. model PN- junctions of given specifications
4. model MOS capacitors
5. model MOSFETs and model the MOSFETs
6. mitigate the short channel effects and design UDSM transistors
Module:1 Semiconductor Physics 5 hours CO: 1
Energy bands in solids - Intrinsic and Extrinsic semiconductors - Direct and Indirect bandgap -
Density of states - Fermi distribution -Free carrier densities - Boltzmann statistics - Thermal
equilibrium.
Module:2 Carrier Transport in Semiconductors 4 hours CO: 2
Current flow mechanisms: Drift current, Diffusion current - Mobility of carriers - Current density
equations - Continuity equation.
Module:3 P-N Junctions 5 hours CO: 3
Thermal equilibrium physics - Energy band diagrams - Space charge layers - Poisson equation -
Electric fields and Potentials - p-n junction under applied bias - Static current-voltage
characteristics of p-n junctions - Breakdown mechanisms.
Dr. Gargi Raina VIT Chennai
Module:4 MOS Capacitor 8 hours CO: 4
Accumulation - Depletion - Strong inversion - Threshold voltage - Contact potential - Gate work
function - Oxide and Interface charges - Body effect - C-V characteristics of MOS
Module:5 MOSFETs and Compact Models 8 hours CO: 5
Drain current - Saturation voltage - Sub-threshold conduction - Effect of gate and drain voltage on
carrier mobility - Compact models for MOSFET and their implementation in SPICE: Level 1, 2
and 3 - MOS model parameters in SPICE.
Module:6 Scaling and Short Channel Effects 6 hours CO: 5
Effect of scaling - Channel length modulation - Punch-through - Hot carrier degradation -
MOSFET breakdown - Drain-induced barrier lowering.
Module:7 UDSM Transistor Design Issues 7 hours CO: 6
Effect of tox - Effect of high-k and low-k dielectrics on the gate leakage and Source and drain
leakage - tunneling effects - Different gate structures in UDSM - Impact and reliability challenges
in UDSM.
Module:8 Contemporary issues: 2 hours
Total Lecture hours: 45 hours
Dr. Gargi Raina VIT Chennai
Text Book(s)
1. Ben G. Streetman and S. Banerjee, Solid State Electronic Devices, Pearson Education, U.S,
Seventh Edition, 2014.
2. J.P. Colinge and C. A. Colinge, Physics of Semiconductor Devices, Kluwer Academic
Publishers, US, 2017.
Reference Books
1. Y.P. Tsividis and Colin McAndrew, Operation and Modelling of the MOS Transistor,
Oxford University Press, US, Third Edition, 2011.
2. M K Achutan and K N Bhatt, Fundamental of Semiconductor Devices, McGraw Hill
Education, US, 2017.
Mode of Evaluation: CAT / Assignment / Quiz / FAT
Dr. Gargi Raina VIT Chennai
Evaluation Criteria
COMPONENT PATTERN WEIGHTAGE
Digital Assignment DA1 Quizzes before CAT 1 10 %
(Avg)
Digital Assignment DA2 Quizzes before CAT 2 10 %
(Avg)
Digital Assignment DA3 Simulation 10 %
Assignment
CAT1 30 mins (ONLINE) MCQs, Short Answers 15%
and Problems
CAT2 30 mins (ONLINE) MCQs, Short Answers 15%
and Problems
FAT Pattern will be 40%
intimated later
Dr. Gargi Raina VIT Chennai
Assessment Rubrics
Assessment Date Max Weightage Remarks Course
Marks Outcome
Quizzes One quiz 20 10 Before CAT-1 CO1 ; CO2
per week
Quizzes One quiz 20 10 Before CAT-2 CO3 ; CO4
per week
Assignment Submission 50 10 Questions CO2, CO3,
2 weeks and rubrics CO4 & CO5
before FAT will be given
separately
CAT- 1 As per announcement 15 Schedule CO1, CO2
CAT- 2 by the University 15 will be CO3, CO$,
announced CO5
by the
FAT 40 University All
Dr. Gargi Raina VIT Chennai
Tentative Course Plan
• Week 1 & 2
Module 1- Semiconductor Physics
• Week 2 & 3
Module 2 – Carrier Transport in Semiconductors
• Week 4 & 5
Module 3 – P-N Junction
Dr. Gargi Raina VIT Chennai
Module 1
Semiconductor Physics
• Energy Bands in Solids
• Intrinsic and Extrinsic Semiconductors
• Direct and Indirect Bandgap
• Fermi distribution
• Density of states
• Carrier Concentration
Dr. Gargi Raina VIT Chennai
Introduction
Lecture 1.1
Dr. Gargi Raina VIT Chennai
Semiconductors
Image Source: https://www.quora.com/What-is-the-
difference-between-a-semiconductor-conductor-and-
superconductor
• Conductivity in between those of metals and insulators.
• Conductivity can be varied over orders of magnitude by changes in
Temperature, Optical excitation, and Impurity content (doping).
• Elemental semiconductors: Si, Ge
• Si widely used for Rectifiers, Transistors, and ICs.
Dr. Gargi Raina VIT Chennai
Compound semiconductors:
Binary :
GaAs, AlAs, GaP, etc. (III-V)
ZnS, ZnTe, CdSe (II-VI)
SiC, SiGe (IV compounds)
Ternary : GaAsP
Quaternary : InGaAsP
III-V compounds widely used in optoelectronic and high-speed applications.
Dr. Gargi Raina VIT Chennai
Applications of different types of Semiconductor Materials
• Integrated circuits (ICs) SSI, MSI, LSI, and VLSI.
• Fluorescent materials used in TV screens II-VI (ZnS).
• Light detectors InSb, CdSe, PbTe, HgCdTe.
• Infrared and nuclear radiation detectors Si and Ge.
• Gunn diode (microwave device) GaAs, InP.
• Semiconductor LEDs GaAs, GaP.
• Semiconductor LASERs GaAs, AlGaAs.
Dr. Gargi Raina VIT Chennai
Activity
Examples for Binary, Tertiary & Quaternary Compound
Semiconductors and their Applications
Dr. Gargi Raina VIT Chennai
