HYG017N04LS1C2
Single N-Channel Enhancement Mode MOSFET
Feature Description Pin Description
40V/135A
D D D D D D D D
RDS(ON)= 1.7mΩ (typ.) @VGS = 10V
RDS(ON)= 2.3mΩ (typ.) @VGS = 4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen- Free Devices Available
S S S G G S S S
Pin1
PDFN5*6-8L
Applications
Switching Application
Power Management for DC/DC
Battery Protection
Single N-Channel MOSFET
Ordering and Marking Information
Package Code
C2 C2: PDFN5*6-8L
G017N04
XYMXXXXXX Date Code
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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HYG017N04LS1C2
Absolute Maximum Ratings
Symbol Parameter Rating Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 40 V
VGSS Gate-Source Voltage ±20 V
TJ Junction Temperature Range -55 to 175 °C
TSTG Storage Temperature Range -55 to 175 °C
IS Source Current-Continuous(Body Diode) Tc=25°C 135 A
Mounted on Large Heat Sink
IDM Pulsed Drain Current * Tc=25°C 500 A
Tc=25°C 135 A
ID Continuous Drain Current
Tc=100°C 95 A
Tc=25°C 75 W
PD Maximum Power Dissipation
Tc=100°C 37.5 W
RJC Thermal Resistance, Junction-to-Case 2 °C/W
RJA Thermal Resistance, Junction-to-Ambient ** 45 °C/W
EAS SinglePulsed-Avalanche Energy *** L=0.3mH 359 mJ
Note: * Repetitive rating；pulse width limited by [Link] temperature.
** Surface mounted on FR-4 board.
*** Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
HYG017N04LS1
Symbol Parameter Test Conditions Unit
Min Typ. Max
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V,IDS=250μA 40 - - V
VDS=40V,VGS=0V - - 1 μA
IDSS Drain-to-Source Leakage Current
TJ=125°C - - 50 μA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250μA 1.0 1.8 3.0 V
IGSS Gate-Source Leakage Current VGS=±20V,VDS=0V - - ±100 nA
VGS=10V,IDS=20A - 1.7 2.1
RDS(ON)* Drain-Source On-State Resistance mΩ
VGS=4.5V,IDS=20A - 2.3 2.8
Diode Characteristics
VSD* Diode Forward Voltage ISD=20A,VGS=0V - 0.77 1.2 V
trr Reverse Recovery Time - 33.8 - ns
ISD=20A,dISD/dt=100A/μs
Qrr Reverse Recovery Charge - 32.7 - nC
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HYG017N04LS1C2
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HYG017N04LS1
Symbol Parameter Test Conditions Unit
Min Typ. Max
Dynamic Characteristics
VGS=0V,VDS=0V,
RG Gate Resistance - 1.1 - Ω
Frequency=1.0MHz
Ciss Input Capacitance VGS=0V, - 4332 -
Coss Output Capacitance VDS=25V, - 813 - pF
Crss Reverse Transfer Capacitance Frequency=1.0MHz - 50 -
td(ON) Turn-on Delay Time - 15 -
Tr Turn-on Rise Time VDD=20V,RG=2.5Ω, - 41 -
ns
td(OFF) Turn-off Delay Time IDS=20A,VGS=10V - 40 -
Tf Turn-off Fall Time - 8 -
Gate Charge Characteristics
Qg Total Gate Charge （VGS=10V） - 66.1 -
Qg Total Gate Charge （VGS=4.5V） - 31.3 -
VDS =32V, ID=20A nC
Qgs Gate-Source Charge - 16.3 -
Qgd Gate-Drain Charge - 10.5 -
Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%
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HYG017N04LS1C2
Typical Operating Characteristics
Figure 1: Power Dissipation Figure 2: Drain Current
Power Dissipation (w)
ID-Drain Current(A)
Voltage
Tc-Case Temperature(℃) Tc-Case Temperature(℃)
Figure 3: Safe Operation Area Figure 4: Thermal Transient Impedance
Impedance (℃/W)
Normalized Transient
ID-Drain Current(A)
Voltage
Thermal
Z jc
VDS-Drain-Source Voltage(V) Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics Figure 6: Drain-Source On Resistance
RDS(ON)-ON-Resistance(mΩ)
ID-Drain Current(A)
Voltage
Voltage
VDS-Drain-Source Voltage (V) ID-Drain Current(A)
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HYG017N04LS1C2
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature Figure 8: Source-Drain Diode Forward
Normalized On-Resistance(A)
IS-Source Current (A)
Voltage
Voltage
Tj-Junction Temperature (℃) VSD-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics Figure 10: Gate Charge Characteristics
VGS-Gate-Source Voltage (V)
C-Capacitance(pF)
Voltage
Voltage
VDS-Drain-Source Voltage (V) QG-Gate Charge (nC)
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HYG017N04LS1C2
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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HYG017N04LS1C2
Device Per Unit
Package Type Unit Quantity
PDFN5*6-8L Reel 5000
Package Information
PDFN5*6-8L
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HYG017N04LS1C2
Classification Profile
Classification Reflow Profiles
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
3 °C/second max. 3°C/second max.
(Tsmaxto TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 SeeClassification Tempin table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tpto Tsmax) 6 °C/second max. 6 °C/second max.
Time 25°C to peak temperature 6 minutes max. 8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
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HYG017N04LS1C2
Table [Link] Eutectic Process – Classification Temperatures (Tc)
Package Volume mm³ Volume mm³
Thickness <350 ≥350
＜2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Table [Link]-free Process – Classification Temperatures (Tc)
Package Volume mm³ Volume mm³ Volume mm³
Thickness <350 350-2000 ≥2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C
Reliability Test Program
Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTGB JESD-22, A108 168/500/1000 Hrs, Bias @ 150°C
HTRB JESD-22, A108 168/500/1000 Hrs, Bias @ 150°C
PCT JESD-22, A102 96 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -55°C~150°C
Customer Service
Worldwide Sales and Service: sales@[Link]
Technical Support: Technology@[Link]
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@[Link]
Web net: [Link]
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