HYG017N10NS1TA
N-Channel Enhancement Mode MOSFET
Feature Pin Description
Tab
100V/330A
RDS(ON)=1.6mΩ(typ.)@VGS = 10V
100% Avalanche Tested
Pin 8
Reliable and Rugged
Halogen-Free Devices Available
(RoHS Compliant)
Pin 1
TOLL
Applications
Tab
Switching application
Power management for inverter systems
Battery management Pin 1
Pin 2,3,4,5,6,7,8
N-Channel MOSFET
Ordering and Marking Information
Package Code
TA TA:TOLL
G017N10
Date Code
XYMXXXXXX
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
[Link] V1.0
1
HYG017N10NS1TA
Absolute Maximum Ratings
Symbol Parameter Rating Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 100 V
VGSS Gate-Source Voltage ±20 V
TJ Junction Temperature Range -55 to 175 °C
TSTG Storage Temperature Range -55 to 175 °C
IS Source Current-Continuous(Body Diode) Tc=25°C 330 A
Mounted on Large Heat Sink
IDM Pulsed Drain Current * Tc=25°C 1200 A
Tc=25°C 330 A
ID Continuous Drain Current
Tc=100°C 233 A
Tc=25°C 428.5 W
PD Maximum Power Dissipation
Tc=100°C 214.3 W
RθJC Thermal Resistance, Junction-to-Case 0.35 °C/W
RθJA Thermal Resistance, Junction-to-Ambient ** 45 °C/W
EAS SinglePulsed-Avalanche Energy *** L=0.3mH 1605 mJ
Note: * Repetitive rating；pulse width limited by [Link] temperature.
** Surface mounted on 1in2 FR-4 board.
*** Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
HYG017N10NS1
Symbol Parameter Test Conditions Unit
Min Typ. Max
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V,IDS= 250μA 100 - - V
VDS=100V,VGS=0V - - 1 μA
IDSS Drain-to-Source Leakage Current
TJ=125°C - - 50 μA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS= 250μA 2 3 4 V
IGSS Gate-Source Leakage Current VGS=±20V,VDS=0V - - ±100 nA
RDS(ON) Drain-Source On-State Resistance VGS= 10V,IDS=100A - 1.6 1.95 mΩ
Diode Characteristics
VSD Diode Forward Voltage ISD=100A,VGS=0V - 0.86 1.2 V
trr Reverse Recovery Time - 154 - ns
ISD=100A,dISD/dt=100A/μs
Qrr Reverse Recovery Charge - 260 - nC
[Link] V1.0
2
HYG017N10NS1TA
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HYG017N10NS1
Symbol Parameter Test Conditions Unit
Min Typ. Max
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=300KHz - 1.3 - Ω
Ciss Input Capacitance VGS=0V, - 13880 -
Coss Output Capacitance VDS= 25V, - 5260 - pF
Crss Reverse Transfer Capacitance Frequency=300KHz - 408 -
td(ON) Turn-on Delay Time - 50 -
Tr Turn-on Rise Time VDD= 50V,RG=4.0Ω, - 114 -
ns
td(OFF) Turn-off Delay Time IDS= 100A,VGS= 10V - 108 -
Tf Turn-off Fall Time - 132 -
Gate Charge Characteristics
Qg Total Gate Charge - 217 -
Qgs Gate-Source Charge VDS =80V, VGS=10V,IDs=100A - 75 - nC
Qgd Gate-Drain Charge - 47 -
Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%
[Link] V1.0
3
HYG017N10NS1TA
Typical Operating Characteristics
Figure 1: Power Dissipation Figure 2: Drain Current
Power Dissipation (w)
ID-Drain Current(A)
Tc-Case Temperature(℃) Tc-Case Temperature(℃)
Figure 3: Safe Operation Area Figure 4: Thermal Transient Impedance
Zθjc Normalized Transient
Impedance
ID-Drain Current(A)
Thermal
VDS-Drain-Source Voltage(V) Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics Figure 6: Drain-Source On Resistance
RDS(ON)-ON-Resistance(mΩ)
ID-Drain Current(A)
VDS-Drain-Source Voltage (V) ID-Drain Current(A)
[Link] V1.0
4
HYG017N10NS1TA
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature Figure 8: Source-Drain Diode Forward
Normalized On-Resistance
IS-Source Current (A)
Tj-Junction Temperature (℃) VSD-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics Figure 10: Gate Charge Characteristics
12
VGS-Gate-Source Voltage (V)
C-Capacitance(pF)
VDS-Drain-Source Voltage (V) QG-Gate Charge (nC)
Figure 11: Transfer Characteristice Figure 12: Gate Charge Characteristics
VGS-Gate-Source Voltage (V)
ID，Drain Current(A)
VGS-Gate to Source Voltage (V) Tj-Junction Temperature (℃)
[Link] V1.0
5
HYG017N10NS1TA
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
[Link] V1.0
6
HYG017N10NS1TA
Device Per Unit
Package Type Unit Quantity
TOLL Reel 1200
Package Information
TOLL
[Link] V1.0
7
HYG017N10NS1TA
Carrier Tape
[Link] V1.0
8
HYG017N10NS1TA
Classification Profile
Classification Reflow Profiles
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
3 °C/second max. 3°C/second max.
(Tsmaxto TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 SeeClassification Tempin table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tpto Tsmax) 6 °C/second max. 6 °C/second max.
Time 25°C to peak temperature 6 minutes max. 8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
[Link] V1.0
9
HYG017N10NS1TA
Table [Link] Eutectic Process – Classification Temperatures (Tc)
Package Volume mm³ Volume mm³
Thickness <350 ≥350
＜2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Table [Link]-free Process – Classification Temperatures (Tc)
Package Volume mm³ Volume mm³ Volume mm³
Thickness <350 350-2000 ≥2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C
Reliability Test Program
Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
PRECON JESD-22, A113 85°C/85%RH，168Hrs
HTRB JESD-22, A108 168/500/1000 Hrs, Bias @ 150°C
HTGB JESD-22, A108 168 /500/1000Hrs, Vgs100% @ 150°C
PCT JESD-22, A102 96 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 250/500/1000 Cycles, -55°C~150°C
Customer Service
Worldwide Sales and Service: sales@[Link]
Technical Support:Technology@[Link]
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@[Link]
Web net: [Link]
[Link] V1.0
10
