HYG050N10NS1P/MF
N-Channel Enhancement Mode MOSFET
Feature Pin Description
100V/135A
RDS(ON)=4.4mΩ (typ.) @ VGS = 10V
100% Avalanche Tested
Reliable and Rugged
Lead-Free and Green Devices Available
(RoHS Compliant)
TO-220FB-3L TO-220MF-3L
Applications
Power Switching application
Motor Control
N-Channel MOSFET
Ordering and Marking Information
Package Code
P MF P :TO-220FB-3L MF :TO-220MF-3L
G050N10 G050N10
Date Code
XYMXXXXXX XYMXXXXXX
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
[Link] V1.0
1
HYG050N10NS1P/MF
Absolute Maximum Ratings
Symbol Parameter Rating Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 100 V
VGSS Gate-Source Voltage ±20 V
TJ Maximum Junction Temperature -55 to 175 °C
TSTG Storage Temperature Range -55 to 175 °C
IS Source Current-Continuous(Body Diode) Tc=25°C 135 A
Mounted on Large Heat Sink
IDM Pulsed Drain Current * Tc=25°C 510 A
Tc=25°C 135 A
ID Continuous Drain Current
Tc=100°C 95.5 A
Tc=25°C 189.8 W
PD Maximum Power Dissipation
Tc=100°C 94.9 W
RJC Thermal Resistance, Junction-to-Case 0.79 °C/W
RJA Thermal Resistance, Junction-to-Ambient ** 62 °C/W
EAS Single Pulsed-Avalanche Energy *** L=0.3mH 452 mJ
Note: * Repetitive rating；pulse width limited by max. junction temperature.
** Surface mounted on FR-4 board.
*** Limited by TJmax , starting TJ=25°C, L = 0.3mH, VDS=80V, VGS =10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
HYG050N10NS1
Symbol Parameter Test Conditions Unit
Min Typ. Max
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V,IDS=250μA 100 - - V
VDS=100V,VGS=0V - - 1.0 μA
IDSS Drain-to-Source Leakage Current
TJ=125°C - - 50 μA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250μA 2 3 4 V
IGSS Gate-Source Leakage Current VGS=±20V,VDS=0V - - ±100 nA
RDS(ON)* Drain-Source On-State Resistance VGS=10V,IDS=50A - 4.4 5.2 mΩ
Diode Characteristics
VSD* Diode Forward Voltage ISD=50A,VGS=0V - 0.89 1.3 V
trr Reverse Recovery Time - 54.2 - ns
ISD=50A,dISD/dt=100A/μs
Qrr Reverse Recovery Charge - 73.7 - nC
[Link] V1.0
2
HYG050N10NS1P/MF
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HYG050N10NS1
Symbol Parameter Test Conditions Unit
Min Typ. Max
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.0 - Ω
Ciss Input Capacitance VGS=0V, - 6359 -
Coss Output Capacitance VDS=50V, - 716 - pF
Reverse Transfer
Crss Frequency=1.0MHz - 77 -
Capacitance
td(ON) Turn-on Delay Time - 21 -
Tr Turn-on Rise Time VDD=50V,RG=4Ω, - 82 -
ns
td(OFF) Turn-off Delay Time IDS=50A,VGS=10V - 71 -
Tf Turn-off Fall Time - 104 -
Gate Charge Characteristics
Qg Total Gate Charge - 100 -
VDS=50V, VGS=10V，
Qgs Gate-Source Charge - 30 - nC
ID=50A
Qgd Gate-Drain Charge - 22 -
Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%
[Link] V1.0
3
HYG050N10NS1P/MF
Typical Operating Characteristics
Figure 1: Power Dissipation Figure 2: Drain Current
Power Dissipation (w)
ID-Drain Current(A)
Tc-Case Temperature(℃) Tc-Case Temperature(℃)
Figure 3: Safe Operation Area Figure 4: Thermal Transient Impedance
Normalized Transient
ID-Drain Current(A)
Impedance
Thermal
Zθjc
VDS-Drain-Source Voltage(V) Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics Figure 6: Drain-Source On Resistance
RDS(ON)-ON-Resistance(mΩ)
ID-Drain Current(A)
VDS-Drain-Source Voltage (V) ID-Drain Current(A)
[Link] V1.0
4
HYG050N10NS1P/MF
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature Figure 8: Source-Drain Diode Forward
Normalized On-Resistance
IS-Source Current (A)
Tj-Junction Temperature (℃) VSD-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics Figure 10: Gate Charge Characteristics
VGS-Gate-Source Voltage (V)
C-Capacitance(F)
VDS-Drain-Source Voltage (V) QG-Gate Charge (nC)
[Link] V1.0
5
HYG050N10NS1P/MF
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
[Link] V1.0
6
HYG050N10NS1P/MF
Device Per Unit
Package Type Unit Quantity
TO-220FB-3L Tube 50
TO-220MF-3L Tube 50
Package Information
TO-220FB-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN NOM MAX
A 4.37 4.57 4.77
A1 1.25 1.30 1.45
A2 2.20 2.40 2.60
b 0.70 0.80 0.95
b2 1.17 1.27 1.47
c 0.40 0.50 0.65
D 15.10 15.60 16.10
D1 8.80 9.10 9.40
D2 5.50 - -
E 9.70 10.00 10.30
E3 7.00 - -
e 2.54 BSC
e1 5.08 BSC
H1 6.25 6.50 6.85
L 12.75 13.50 13.80
L1 - 3.10 3.40
ΦP 3.40 3.60 3.80
Q 2.60 2.80 3.00
[Link] V1.0
7
HYG050N10NS1P/MF
Package Information
TO-220MF-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN NOM MAX
E 9.96 10.16 10.36
A 4.50 4.70 4.90
A1 2.34 2.54 2.74
A2 0.30 0.45 0.60
A4 2.56 2.76 2.96
c 0.40 0.50 0.65
c1 1.20 1.30 1.35
D 15.57 15.87 16.17
H1 6.70REF
e 2.54BSC
L 12.68 12.98 13.28
L1 2.93 3.03 3.13
ΦP 3.03 3.18 3.38
ΦP3 3.15 3.45 3.65
F3 3.15 3.30 3.45
G3 1.25 1.35 1.55
b1 1.18 1.28 1.43
b2 0.70 0.80 0.95
[Link] V1.0
8
HYG050N10NS1P/MF
Classification Profile
Classification Reflow Profiles
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
3 °C/second max. 3°C/second max.
(Tsmaxto TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 SeeClassification Tempin table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tpto Tsmax) 6 °C/second max. 6 °C/second max.
Time 25°C to peak temperature 6 minutes max. 8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
[Link] V1.0
9
HYG050N10NS1P/MF
Table [Link] Eutectic Process – Classification Temperatures (Tc)
Package Volume mm³ Volume mm³
Thickness <350 ≥350
＜2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Table [Link]-free Process – Classification Temperatures (Tc)
Package Volume mm³ Volume mm³ Volume mm³
Thickness <350 350-2000 ≥2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C
Reliability Test Program
Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 168/500/1000 Hrs, Bias @ 150°C
HTGB JESD-22, A108 168 Hrs/500hr/1000hr, Vgs100% @ 150°C
PCT JESD-22, A102 96 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -55°C~150°C
Customer Service
Worldwide Sales and Service: sales@[Link]
Technical Support: Technology@[Link]
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@[Link]
Web net: [Link]
[Link] V1.0
10
