Name annd Last Nam
me: Electronic Materials and Device PPhysics 2023
3 Spring
1 hour 300 minutes 2. final‐exam
f
Please Read first:
Do not enngage in cheatingg or copying someone else's answ wers. Each part of
o the question is worth the same amount of pointss. You may
use a non-pprogrammable electronic calculatoor with basic funcctions. Your answ wers should be clear, legible, conccise, and sufficieent to receive
credit. Additionally, you muust use the samee notation that waas used in the leccture, otherwise your
y answer will nnot be evaluated. You must
also adhere
a to the timee limits, as subm
missions received after the deadline will not be evalluated.
To gget credit musst show all work clear andd sufficient maanner (also readable versionn of a file mu
ust be
submitted)!! Each a,b,c iss 8.5 pts-Se
econd sttep
1) Let us consider a MOS cap pacitor withh energy ban nd diagram
is sh
hown. The body
b part is silicon at 3000 K and the insulator
is SiiO2 with a relative
r dielectric constaant of 4 and a
thickkness of 1.55 nm. Let there
t be noo charge at the oxide-
semiconductor interface first and tthe bulk of o Si are
grouunded. Now w we replacce the semicconductor dopedd with
the same denssity as in figure but doped with Boron.
Whaatever modee capacitor in figure (aaccumulation or else),
assuume replaced d semicondu uctor held inn the same mode.
m
a) IIn this new w a semicon nductor MO OS capacitorr, plot the
ssimilar band
d diagram fo or a replaced d new semicconductor.
EExplanationn in detail. Calculate bboron dopin ng density
aand its typpe. Calcula ate oxide ccapacitor ( / ).
WWhat surfacce voltage prroduce very strong inversion (give its i sign)?
b) C Calculate th
he surface pootential (num merical answwer expected. Include ththe sign.) an
nd charge
( / ) in semicond ductor (notee: given at
a the top off the diagram
m is for part c)?
c) W What is thee voltage ofo the electrrostatic poteential betwe een the gatee electrode and the
ssemiconducctor for giiven oxidee electric field in
ddiagram? Make
M sure to include thee correct signn. (Hint:
TThe answer is not zero.)
2) The following 'plot' showss the carrierr densities in a PN
juncction at room m temperatu ure. N side of the juncttion is in
the ffigure. Noticce log scale!
a) C Calculate dooping densitty and the in ntrinsic den
nsity. Do
n side shortt or long?
b) D Determine bias type (forward orr reversed), what is
tthe voltage applied if p‐‐side is grou
unded.
c) Plot quasi Fermi lev vels as funcction x staarting ,
iindicate whhat happens in . Shoow where maximum m
qquasi Fermi level splittting occur?? Can you estimate
ddiffusion len
ngth from thhe figure, if yyes what is it?
i
