Name annd Last Nam
me: Electronic Materials and Device PPhysics 2023
3 Spring
1 hour 300 minutes 2. final‐exam
f
Please Read first:
Do not enngage in cheatingg or copying someone else's answ wers. Each part of
o the question is worth the same amount of pointss. You may
use a non-pprogrammable electronic calculatoor with basic funcctions. Your answ wers should be clear, legible, conccise, and sufficieent to receive
credit. Additionally, you muust use the samee notation that waas used in the leccture, otherwise your
y answer will nnot be evaluated. You must
also adhere
a to the timee limits, as subm
missions received after the deadline will not be evalluated.
To gget credit musst show all work clear andd sufficient maanner (also readable versionn of a file mu
ust be
ubmitted)! Eacch a,b,c is 8.55 pts- first step
su
1) Connsider the ennergy band diagrams oof a metal an nd a
miconductor shown in figure.
sem f The semicondu uctor
has a relative dielectric
d coonstant of 112, an electtron
affinnity = 3.225 eV, Φ = 3.5 eV, and a band dgap
= 1.0 eV. TheT metal has a workkfunction Φ =
4.0 eeV. Answerr the follow wing questioons.
a) W What is thhe value off the (1) Scchottky barrrier
hheight? (2)W What is thee built-in vvoltage (ssign
aalso)? (3) What
W is the depletion wwidth W in equilibrium
e m? (3) Whatt is the peak
k electric
ffield (sign also)
a in
i the semicconductor under
u equilib
brium condditions?
b) D Draw the energy
e bandd diagram oof this metaal-semicond ductor juncttion in equiilibrium.
LLabel key parameters on the diaagram when n MS junction is madde. Replacce metal
ccontact so that
t MS jun nction becommes ohmic. What are the t possiblee work funcction this
nnew metal for
f ohmic contact, plott now energy y band diag
gram for ohmmic junctionn.
2) Thiss review pro
oblems queestions may or may nott be related
d but you m
must providee concise
answ
wer.
a) ((1)Think off holes moviing in a con ncentration gradient. What
W is the fforce pushin
ng them?
((2)Which type
t of scaattering meechanism iss dominantt in a sem miconductor at low
ttemperaturee? (3) How inversion
i ch
harge and ga ate voltage iss related? (44) Why GaN N is used
ffor power ellectronics?
b) IIf you shinee a laser unniformly intoo p-type sem
miconductorr
ssurface (thin
n surface) with
w a constaant rate G fo or long time,
hhow will ex xcess chargges produceed as functiion of time.
AAssume bo oth low injection and high injecction levels,
aanswer in seeperately buut which onee is which.
c) FFor C, Si Ge
G have band d formation with band gap
g opening g
iis depicted in figure. Si atom nu umber 14 an nd Al atomm
nnumber 13.. Why Si and Al succh a differeent electrical
pproperty? Explain using
u band
d diagram. What iss
at band gap opens up.
rresponsible for Si so tha
