2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode field effect transistors High density cell design for low RDS(ON).
are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch.
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, Rugged and reliable.
and fast switching performance. They can be used in most
High saturation current capability.
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
___________________________________________________________________________________________
G
D
G
S
TO-92 S
2N7000.SAM Rev. A1
Electrical Characteristics T A = 25oC unless otherwise noted
Symbol Parameter Conditions Type Min Typ Max Units
ON CHARACTERISTICS Continued (Note 1)
ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 10 V 2N7000 75 600 mA
VGS = 10 V, VDS > 2 VDS(on) 2N7002 500 2700
VGS = 10 V, VDS > 2 VDS(on) NDS7002A 500 2700
gFS Forward Transconductance VDS = 10 V, ID = 200 mA 2N7000 100 320 mS
VDS > 2 VDS(on), ID = 200 mA 2N7002 80 320
VDS > 2 VDS(on), ID = 200 mA NDS7002A 80 320
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, All 20 50 pF
f = 1.0 MHz All
Coss Output Capacitance 11 25 pF
Crss Reverse Transfer Capacitance All 4 5 pF
ton Turn-On Time VDD = 15 V, RL = 25 Ω, 2N7000 10 ns
ID = 500 mA, VGS = 10 V,
RGEN = 25
VDD = 30 V, RL = 150 Ω, 2N700 20
ID = 200 mA, VGS = 10 V, NDS7002A
RGEN = 25 Ω
toff Turn-Off Time VDD = 15 V, RL = 25 Ω, 2N7000 10 ns
ID = 500 mA, VGS = 10 V,
RGEN = 25
VDD = 30 V, RL = 150 Ω, 2N700 20
ID = 200 mA, VGS = 10 V, NDS7002A
RGEN = 25 Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current 2N7002 115 mA
NDS7002A 280
ISM Maximum Pulsed Drain-Source Diode Forward Current 2N7002 0.8 A
NDS7002A 1.5
VSD Drain-Source Diode Forward VGS = 0 V, IS = 115 mA (Note 1) 2N7002 0.88 1.5 V
Voltage
VGS = 0 V, IS = 400 mA (Note 1) NDS7002A 0.88 1.2
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
Typical Electrical Characteristics
2N7000 / 2N7002 / NDS7002A
2 3
VGS = 10V 9.0 V GS =4.0V
8.0 4 .5
, DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
7.0 2 .5 5 .0
RDS(on) , NORMALIZED
1 .5
6 .0
6.0 2
7 .0
1
5.0 1 .5 8 .0
9 .0
10
0 .5
4.0 1
D
I
3.0
0 0 .5
0 1 2 3 4 5 0 0 .4 0 .8 1 .2 1 .6 2
V DS , DRAIN-SOURCE VOLTAGE (V) I D , DRA IN CURRENT (A)
2 3
V GS = 10V V GS = 10V
DRAIN-SOURCE ON-RESISTANCE
1.75 2 .5
DRAIN-SOURCE ON-RESISTANCE
I D = 500m A
TJ = 1 2 5 ° C
R DS(ON) , NORMALIZED
R DS(on) , NORMALIZED
1.5 2
1.25 1 .5
25°C
1 1
-55°C
0.75 0 .5
0.5 0
-5 0 -2 5 0 25 50 75 100 125 150 0 0 .4 0 .8 1 .2 1 .6 2
TJ , JUNCTION T EMPERATURE (°C) I D , DRAIN CURRENT (A)
2 1 .1
T J = -55°C
VDS = 10V 25°C V DS = VGS
GATE-SOURCE THRESHOLD VOLTAGE
125°C 1 .0 5
1.6 I D = 1 mA
ID , DRAIN CURRENT (A)
Vth , NORMALIZED
1
1.2
0 .9 5
0.8
0 .9
0.4
0 .8 5
0 0 .8
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
V , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEM PERATURE (°C)
GS
2N7000.SAM Rev. A1
Typical Electrical Characteristics (continued)
2N7000 / 2N7002 /NDS7002A
1.1 2
I D = 250µA
DRAIN-SOURCE BREAKDOWN VOLTAGE
1 V GS = 0V
1.075
1.05
TJ = 1 2 5 ° C
1.025 0 .1
25°C
0 .0 5
-5 5 ° C
1
0.975 0 .0 1
0 .0 0 5
0.95
0.925
-50 -25 0 25 50 75 100 125 150 0 .0 0 1
0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .4
TJ , JUNCTION TEM PERATURE (°C)
V SD , BODY DIODE FORW A RD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation Figure 8. Body Diode Forward Voltage Variation with
with Temperature
60 10
C oss
6
10
ID = 5 0 0 m A
5 4
C rss
f = 1 MHz 2 280m A
2
V GS = 0V
115m A
1 0
1 2 3 5 10 20 30 50 0 0 .4 0 .8 1 .2 1 .6 2
V DS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC)
VDD t on t off
t d(on) tr t d(off) tf
V IN RL 90% 90%
10%
S
Pulse Width
2N7000.SAM Rev. A1
Typical Electrical Characteristics (continued)
3 3
2 2
10
0u
1 1 s
it 10
Lim 0u it 1m
0.5 s Lim
S( ON N) s
RD S(O
1m RD
s
10 10
ms ms
0.1 10 0.1
0m
s 10
0.05 1s 0.05 0m
V GS = 10V s
10 1s
s VGS = 10V
SINGLE PULSE DC 10
SINGLE PULSE s
T A = 25°C DC
0.01 0.01 T A = 25°C
0.005 0.005
1 2 5 10 20 30 60 80 1 2 5 10 20 30 60 80
V DS , DRAIN-SOURCE VOLTAGE (V) V DS , DRAIN-SOURCE VOLTAGE (V)
3
2 it
Lim 10
N) 0u
1 S(O s
RD 1m
s
I D , DRAIN CURRENT (A)
0.5
10
ms
0.1
10
0m
0.05 s
V GS = 10V 1s
10
SINGLE PULSE s
DC
T A = 25°C
0.01
0.005
1 2 5 10 20 30 60 80
V DS , DRAIN-SOURCE VOLTAGE (V)
1
TRANSIENT THERMAL RESISTANCE
0.5 D = 0.5
r(t), NORMALIZED EFFECTIVE
0.1
0.1 P(pk)
0.05
0.05 t1
0 .02
t2
0.01
0.0001 0.001 0.01 0.1 1 10 100 300
t 1, TIME (sec)
Figure 16. TO-92, 2N7000 Transient Thermal Response Curve
1
TRANSIENT THERMAL RESISTANCE
0.5 D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2 0 .2
R θJA (t) = r(t) * R θJA
0.1 0.1 R θJA = (See Datasheet)
0.05 0 .0 5
0 .0 2 P(pk)
0 .0 1
0.01 t1
t2
Single Pulse
TJ - T A = P * RθJA (t)
0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t1 , TIME (sec)
Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve
2N7000.SAM Rev. A1
TO-92 Tape and Reel Data and Package Dimensions
TO-92 Packaging
Configuration: Figure 1.0
5 Reels per
(FSCINT) Intermediate Box
Customized
F63TNR Label sample
Label
LOT: CBVK741B019 QTY: 2000 F63TNR
FSID: PN222N SPEC:
Label
FSCINT Label
10,000 units maximum
per intermediate box
for std option
Style “A”, D26Z, D70Z (s/h) Style “E”, D27Z, D71Z (s/h)
FIRST WIRE OFF IS EMITTER (ON PKG. 92) FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM FLAT OF TRANSISTOR IS ON TOP
Hd
P Pd
Ha W1
d S
L
H1 HO
L1
WO t
W2
t1
P1 F1
P2 DO
ELECT ROSTATIC
SEN SITIVE D EVICES
D4 D1
D3
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
SOT-23 Packaging
Configuration: Figure 1.0
3P 3P 3P 3P
SOT-23 Packaging Information
Standard
Packaging Option D87Z
(no flow code)
Packaging type TNR TNR SOT-23 Unit Orientation
Qty per Reel/Tube/Bag 3,000 10,000
Reel Size 7" Dia 13"
Box Dimension (mm) 187x107x183 343x343x64
343mm x 342mm x 64mm Human Readable Label
Max qty per Box 24,000 30,000
0.0082 0.0082
Intermediate box for L87Z Option
Weight per unit (gm)
Weight per Reel (kg) 0.1175 0.4006
Note/Comments
H uman readable
Label
187mm x 107mm x 183mm
SOT-23 Tape Leader and Trailer Intermediate Box for Standard Option
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape Leader Tape
300mm minimum or 500mm minimum or
75 empty poc kets 125 empty pockets
E1
F W
E2
B0 Wc
Tc A0
P1
K0
User Direction of Feed
Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
SOT-23 3.15 2.77 8.0 1.55 1.125 1.75 6.25 3.50 4.0 4.0 1.30 0.228 5.2 0.06
(8mm) +/-0.10 +/-0.10 +/-0.3 +/-0.05 +/-0.125 +/-0.10 min +/-0.05 +/-0.1 +/-0.1 +/-0.10 +/-0.013 +/-0.3 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C). 0.5mm
20 deg maximum maximum
Typical
component
cavity 0.5mm
B0 center line maximum
Typical
Sketch A (Side or Front Sectional View) component Sketch C (Top View)
A0 center line
Component Rotation Component lateral movement
Sketch B (Top View)
SOT-23 Reel Configuration: Figure 4.0 Component Rotation
W1 Measured at Hub
Dim A
Max
Dim C
See detail AA
Dim D
W3 min
DETAIL AA
Reel
Tape Size Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
Option
7.00 0.059 512 +0.020/-0.008 0.795 2.165 0.331 +0.059/-0.000 0.567 0.311 – 0.429
8mm 7" Dia
177.8 1.5 13 +0.5/-0.2 20.2 55 8.4 +1.5/0 14.4 7.9 – 10.9
13.00 0.059 512 +0.020/-0.008 0.795 4.00 0.331 +0.059/-0.000 0.567 0.311 – 0.429
8mm 13" Dia
330 1.5 13 +0.5/-0.2 20.2 100 8.4 +1.5/0 14.4 7.9 – 10.9
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0082
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. D