Silicon N-Channel Power MOSFET

○
R

CS4N60 A3R

General Description： VDSS 600 V

CS4N60 A3R, the silicon N-channel Enhanced ID 4 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 W

which reduce the conduction loss, improve switching RDS(ON)Typ 2.1 Ω

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤2.5Ω)
l Low Gate Charge (Typical Data: 14.5nC)

l Low Reverse transfer capacitances(Typical:4pF)

l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter Rating Units
VDSS Drain-to-Source Voltage 600 V
Continuous Drain Current 4 A
ID
Continuous Drain Current T C = 100 °C 2.5 A
a1
IDM Pulsed Drain Current 16 A
VGS Gate-to-Source Voltage ±30 V
a2
EAS Single Pulse Avalanche Energy 250 mJ
a3
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
Power Dissipation 75 W
PD
Derating Factor above 25°C 0.60 W/℃
TJ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃
TL Maximum Temperature for Soldering 300 ℃

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics
Rating Unit
Symbol Parameter Test Conditions
Min. Typ. Max. s
VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA 600 -- -- V

ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.67 -- V/℃

VDS =600V, V GS= 0V,
Ta = 25℃ -- -- 1 µA
IDSS Drain to Source Leakage Current VDS =480V, V GS= 0V,
Ta = 125℃ -- -- 100 µA

IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA

IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =2A -- 2.1 2.5 Ω
VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA 2.0 -- 4.0 V
Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
g fs Forward Transconductance VDS=15V, ID =2A -- 3.5 -- S
C iss Input Capacitance -- 590 --
VGS = 0V V DS = 25V
C oss Output Capacitance f = 1.0MHz -- 55 -- pF
C rss Reverse Transfer Capacitance -- 4 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 14 --
tr Rise Time ID =4A VDD = 300V -- 15 --
RG =10Ω ns
td(OFF) Turn-Off Delay Time -- 34 --
tf Fall Time -- 13 --
Qg Total Gate Charge -- 14.5 --
ID =4A V DD =480V
Qgs Gate to Source Charge VGS = 10V -- 2.6 -- nC
Qgd Gate to Drain (“Miller”)Charge -- 6.5 --

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Source-Drain Diode Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 4 A
ISM Maximum Pulsed Current (Body Diode) -- -- 16 A
VSD Diode Forward Voltage IS =4.0A,VGS =0V -- -- 1.5 V
trr Reverse Recovery Time -- 250 -- ns
IS =4.0A,Tj = 25℃
Qrr Reverse Recovery Charge dIF /dt=100A/us, -- 1000 -- nC
VGS=0V
IRRM Reverse Recovery Current -- 8.03 -- A
Pulse width tp≤300µs,δ≤2%

Symbol Parameter Typ. Units

R θ JC Junction-to-Case 1.67 ℃/W
R θ JA Junction-to-Ambient 100 ℃/W

a1
：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=10mH, ID=7.1A, Start TJ=25℃
a3
：ISD =4A,di/dt ≤100A/us,VDD≤BVDS, Start T J=25℃

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Characteristics Curve：
100 80

PD , Power Dissipation ，Watts

70
Id , Drain Current , Amps

10 60

100us 50

1 40
1ms
OPERATION IN THIS AREA 10ms
30
DC
MAY BE LIMITED BY RDS(ON)
0 .1 TJ=MAX RATED 20
TC=25℃ Single Pulse
10

0 .0 1 0
1 10 100 1000 0 25 50 75 100 125 150
V d s , D r a in - t o - S o u r c e V o lta g e , V o lts TC , Case Temperature , C
Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power Dissipation vs Case Temperature
6 8
250us Pluse Test
Tc = 25℃
5
Id , Drain Current , Amps

VGS=10V
Id , Drain Current , Amps

6
4
VGS=6V

3 4
VGS=4.5V
VGS=5V
2
VGS=4V
2
1

0 0
0 25 50 75 100 125 150 0 5 10 15 20 25
TC , C ase Tem perature , C Vds , Drain-to-Source Voltage , Volts
Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 4 Typical Output Characteristics
1
50%
Thermal Impedance, Normalized

20%

0.1 10%

5%

2%
PDM
t1
t2
0.01
1%
Single pulse
NOTES：
DUTY FACTOR ：D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC

0.001
0.00001 0.0001 0.001 0.01 0.1 1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
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9 8

Isd, Reverse Drain Current , Amps

250us Pulse Test 7
Id , Drain Current , Amps

7.5 VDS=20V

6
6
5

4.5 4
+150℃
+25℃ 3
3
+25℃
+150℃ 2
1.5
1

0 0
2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2
Vgs , Gate to Source Voltage , Volts Vsd , Source - Drain Voltage , Volts
Figure 6 Typical Transfer Characteristics Figure 7 Typical Body Diode Transfer Characteristics

3.5 2.5
Rds(on), Drain to Source ON Resistance,

PULSE DURATION = 10μs PULSE DURATION = 10μs

DUTY CYCLE= 0.5%MAX 2.25 DUTY CYCLE= 0.5%MAX
Rds(on), Drain to Source ON

Tc =25 ℃ VGS=10V ID=2A

3.1 2
Resistance, Ohms

VGS=10V 1.75
Nomalized

2.7 1.5

1.25

2.3 1

0.75

1.9 0.5
0 1 2 3 4 -50 0 50 100 150
Id , Drain Current , Amps Tj, Junction temperature , C

Figure 8 Typical Drain to Source ON Resistance Figure 9 Typical Drian to Source on Resistance
vs Drain Current vs Junction Temperature

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1.15 1.15
Vgs(th),Threshold Voltage, Nomalized

1.1

Breakdown Voltage, Normalized

1.05
1.05

Bvdss,Drain to Source
1
0.95
VGS=0V
0.9 VGS=0V 0.95 ID=250μA
ID=250μA
0.85
0.8
0.85
0.75
0.7
0.65 0.75
-75 -50 -25 0 25 50 75 100 125 150 175 -55 -30 -5 20 45 70 95 120 145 170
Tj, Junction temperature , C Tj, Junction temperature , C

Figure 10 Typical Theshold Voltage vs Junction Temperature Figure 11 Typical Breakdown Voltage vs Junction Temperature

10000 12
Vgs , Gate to Source Voltage ,Volts

10 VDS=480V
VDS=300V
1000
VDS=120V
Capacitance , pF

Ciss 8

100 6

Coss
4
10 VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd 2
Crss=Cgd Crss ID=4A
1 0
0.1 1 10 100 0 3 6 9 12 15
Vds , Drain - Source Voltage , Volts Qg , Total Gate Charge , nC

Figure 12 Typical Capacitance vs Drain to Source Voltage Figure 13 Typical Gate Charge vs Gate to Source Voltage

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Test Circuit and Waveform

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Package Information

Values(mm)
Items MIN MAX
A 6.30 6.90
B 5.20 6.30
B1 0.70 1.30
B2 6.80 7.40
C 2.10 2.50
D 0.30 0.60
E 0.50 0.86
F 0.30 0.60
G 0.70 1.00
H 1.40 2.40
7.50 9.80
5.90 6.50
L
4.40 5.80
2.10 3.90
M 5.10 5.50
N 2.09 2.49
TO-251 Package
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The name and content of poisonous and harmful material in products

Hazardous Substance
Part’s Name
Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP
Limit ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1%

Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Molding Compound ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○
○：means the hazardous material is under the criterion of SJ/T11363-2006.
×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed range of
Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

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