100V N-Channel MOSFETs PDP0970
General Description
BVDSS RDSON ID
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This 100V 3.5m 160A
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching Features
performance, and withstand high energy pulse in the 100V,160A, RDS(ON) =3.5mΩ@VGS = 10V
avalanche and commutation mode. These devices are Improved dv/dt capability
well suited for high efficiency fast switching applications. Fast switching
100% EAS Guaranteed
Green Device Available
TO220 Pin Configuration D Applications
Networking
Load Switch
LED applications
G
Quick Charger
S S
D
G
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol Parameter Rating Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
Drain Current – Continuous (TC=25℃) (Chip Limitation) 160 A
ID
Drain Current – Continuous (TC=100℃) (Chip Limitation) 100 A
1
IDM Drain Current – Pulsed 640 A
2
EAS Single Pulse Avalanche Energy 280 mJ
2
IAS Single Pulse Avalanche Current 75 A
Power Dissipation (TC=25℃) 208 W
PD
Power Dissipation – Derate above 25℃ 1.66 W/℃
TSTG Storage Temperature Range -50 to 150 ℃
TJ Operating Junction Temperature Range -50 to 150 ℃
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RθJA Thermal Resistance Junction to ambient --- 62 ℃/W
RθJC Thermal Resistance Junction to Case --- 0.6 ℃/W
Potens semiconductor corp. Ver.1.0.0 Preliminary
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100V N-Channel MOSFETs PDP0970
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Off Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.05 --- V/℃
VDS=100V , VGS=0V , TJ=25℃ --- --- 1 uA
IDSS Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=125℃ --- --- 10 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A --- 2.8 3.5 m
VGS(th) Gate Threshold Voltage 1.5 2.5 3.5 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -5 --- mV/℃
gfs Forward Transconductance VDS=10V , ID=3A --- 15 --- S
Dynamic and switching Characteristics
Qg Total Gate Charge3 , 4 --- 295 450
3,4
Qgs Gate-Source Charge VDS=80V , VGS=10V , ID=10A --- 70 140 nC
3,4
Qgd Gate-Drain Charge --- 75 150
3,4
Td(on) Turn-On Delay Time --- 66.2 120
3,4
Tr Rise Time VDD=50V , VGS=10V , RG=6 --- 79.6 160
ns
Td(off) Turn-Off Delay Time3 , 4 ID=1A --- 242 480
Tf Fall Time3 , 4 --- 103 200
Ciss Input Capacitance --- 17800 26000
Coss Output Capacitance VDS=25V , VGS=0V , F=1MHz --- 980 1900 pF
Crss Reverse Transfer Capacitance --- 78 150
Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.8 3.6
Drain-Source Diode Characteristics and Maximum Ratings
Symbol Parameter Conditions Min. Typ. Max. Unit
IS Continuous Source Current --- --- 160 A
VG=VD=0V , Force Current
ISM Pulsed Source Current --- --- 320 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V
trr Reverse Recovery Time VGS=0V,IS=10A , --- 64 --- ns
Qrr Reverse Recovery Charge dI/dt=100A/µs , TJ=25℃ --- 150 --- nC
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=50V,VGS=10V,L=0.1mH,IAS=75A.,RG=25,Starting TJ=25℃.
3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4. Essentially independent of operating temperature.
Potens semiconductor corp. Ver.1.0.0 Preliminary
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100V N-Channel MOSFETs PDP0970
Normalized On Resistance (m)
ID , Continuous Drain Current (A)
TC , Case Temperature (℃) TJ , Junction Temperature (℃)
Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ
Normalized Gate Threshold Voltage (V)
VGS , Gate to Source Voltage (V)
TJ , Junction Temperature (℃) Qg , Gate Charge (nC)
Fig.3 Normalized Vth vs. TJ Fig.4 Gate Charge Characteristics
Normalized Thermal Response (RθJC)
ID , Drain Current (A)
Square Wave Pulse Duration (s) VDS , Drain to Source Voltage (V)
Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area
Potens semiconductor corp. Ver.1.0.0 Preliminary
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100V N-Channel MOSFETs PDP0970
Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform
Potens semiconductor corp. Ver.1.0.0 Preliminary
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100V N-Channel MOSFETs PDP0970
TO220 PACKAGE INFORMATION
Dimensions In Millimeters Dimensions In Inches
Symbol
MAX MIN MAX MIN
A 10.300 9.700 0.406 0.382
A1 8.840 8.440 0.348 0.332
A2 1.250 1.050 0.049 0.041
A3 5.300 5.100 0.209 0.201
B 16.200 15.400 0.638 0.606
C 4.680 4.280 0.184 0.169
C1 1.500 1.100 0.059 0.043
D 1.000 0.600 0.039 0.024
E 3.800 3.400 0.150 0.134
G 9.300 8.700 0.366 0.343
H 0.600 0.400 0.024 0.016
K 2.700 2.100 0.106 0.083
L 13.600 12.800 0.535 0.504
M 1.500 1.100 0.059 0.043
N 2.590 2.490 0.102 0.098
T W0.35 W0.014
DIA Φ1.5 TYP. deep0.2 TYP. Φ0.059 TYP. deep0.008 TYP.
Potens semiconductor corp. Ver.1.0.0 Preliminary
