The document summarizes the specifications and characteristics of the ME2N7002DKW-G dual N-channel MOSFET. The MOSFET has a maximum drain-source voltage of 60V, on-resistance as low as 3 ohms, and ESD protection over 2kV. It is well-suited for applications requiring low power loss such as power management in notebooks and LCD displays. Key features include low on-resistance, high current capability, and an ultra-small SOT-363 surface mount package.
The document summarizes the specifications and characteristics of the ME2N7002DKW-G dual N-channel MOSFET. The MOSFET has a maximum drain-source voltage of 60V, on-resistance as low as 3 ohms, and ESD protection over 2kV. It is well-suited for applications requiring low power loss such as power management in notebooks and LCD displays. Key features include low on-resistance, high current capability, and an ultra-small SOT-363 surface mount package.
The document summarizes the specifications and characteristics of the ME2N7002DKW-G dual N-channel MOSFET. The MOSFET has a maximum drain-source voltage of 60V, on-resistance as low as 3 ohms, and ESD protection over 2kV. It is well-suited for applications requiring low power loss such as power management in notebooks and LCD displays. Key features include low on-resistance, high current capability, and an ultra-small SOT-363 surface mount package.
The document summarizes the specifications and characteristics of the ME2N7002DKW-G dual N-channel MOSFET. The MOSFET has a maximum drain-source voltage of 60V, on-resistance as low as 3 ohms, and ESD protection over 2kV. It is well-suited for applications requiring low power loss such as power management in notebooks and LCD displays. Key features include low on-resistance, high current capability, and an ultra-small SOT-363 surface mount package.
ME2N7002DKW-G Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION FEATURES The ME2N7002DKW-G is the Dual N-Channel logic enhancement ● RDS(ON)≦3Ω@VGS=10V ● RDS(ON)≦4Ω@VGS=4.5V mode power field effect transistors are produced using high cell ● RDS(ON)≦4.5Ω@VGS=3V density, DMOS trench technology. This high density process is ● ESD Protection HBM >2KV especially tailored to minimize on-state resistance. These devices ● Super high density cell design for extremely low RDS(ON) are particularly suited for low voltage application such as cellular ● Exceptional on-resistance and maximum DC current phone and notebook computer power management and other battery capability powered circuits , and low in-line power loss are needed in a very APPLICATIONS small outline surface mount package. ● Power Management in Note book ● DC/DC Converter PIN CONFIGURATION ● Load Switch ● LCD Display inverter (SOT-363) Top View
