This document describes the ME4410A N-Channel 30-V MOSFET. It has an extremely low RDS(ON) of 18mΩ at 10V due to its high density trench technology. It is well suited for applications requiring high-side switching and low power loss such as in battery powered devices. Key specifications and characteristics are provided including maximum ratings, electrical characteristics, and typical performance curves.
This document describes the ME4410A N-Channel 30-V MOSFET. It has an extremely low RDS(ON) of 18mΩ at 10V due to its high density trench technology. It is well suited for applications requiring high-side switching and low power loss such as in battery powered devices. Key specifications and characteristics are provided including maximum ratings, electrical characteristics, and typical performance curves.
This document describes the ME4410A N-Channel 30-V MOSFET. It has an extremely low RDS(ON) of 18mΩ at 10V due to its high density trench technology. It is well suited for applications requiring high-side switching and low power loss such as in battery powered devices. Key specifications and characteristics are provided including maximum ratings, electrical characteristics, and typical performance curves.
This document describes the ME4410A N-Channel 30-V MOSFET. It has an extremely low RDS(ON) of 18mΩ at 10V due to its high density trench technology. It is well suited for applications requiring high-side switching and low power loss such as in battery powered devices. Key specifications and characteristics are provided including maximum ratings, electrical characteristics, and typical performance curves.
The ME4410A is the N-Channel logic enhancement mode power ● RDS(ON)≦18mΩ@VGS=10V
field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦20mΩ@VGS=4.5V
trench technology. This high density process is especially tailored ● Super high density cell design for extremely low RDS(ON)
to minimize on-state resistance. These devices are particularly ● Exceptional on-resistance and maximum DC current
suited for low voltage application such as cellular phone and capability
notebook computer power management and other battery
powered circuits where high-side switching and low in-line power APPLICATIONS loss are needed in a very small outline surface mount package. ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC
PIN CONFIGURATION
(SOP-8) Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Symbol 10 sec Steady State Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V TA=25℃ 10 7.5 Continuous Drain Current ID A TA=70℃ 8 6 Pulsed Drain Current IDM 40 A Continuous Source Current (Diode Conduction) IS 2.3 1.26 A TA=25℃ 2.5 1.4 Maximum Power Dissipation PD W TA=70℃ 1.6 0.9 Operating Junction Temperature TJ -55 to 150 ℃ T≦10 sec 35 Thermal Resistance-Junction to Ambient* RθJA ℃/W Steady State 60 Thermal Resistance-Junction to Case RθJC 32 ℃/W *The device mounted on 1in2 FR4 board with 2 oz copper
Symbol Parameter Limit Min Typ Max Unit STATIC VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.4 3.0 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA VDS=30V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current μA VDS=30V, VGS=0V (TJ=55℃) 5
ID(ON) On-State Drain Current a VDS=5V, VGS= 10V 20 A
VGS=10V, ID= 10A 12 18
RDS(ON) Drain-Source On-State Resistance a mΩ VGS=4.5V, ID= 8A 17 20 GFS Forward Transconductance a VDS=15V, ID=10A 17 S VSD Diode Forward Voltage IS=2.3A, VGS=0V 0.7 1.1 V DYNAMIC Qg Total Gate Charge VDS=15V, VGS=4.5V, ID=10A 11 15 Qgt Total Gate Charge 20 26 nC Qgs Gate-Source Charge VDS=15V, VGS=10V, ID=10A 5 Qgd Gate-Drain Charge 4.9 Ciss Input capacitance 700 800 Coss Output Capacitance VDS=15V, VGS=0V, f=1MHz 120 pF Crss Reverse Transfer Capacitance 35 Rg Gate Resistance VGS=0V, VDS=0V, f =1MHz 0.9 Ω td(on) Turn-On Delay Time 14 17 VDD=25V, RL =25Ω tr Turn-On Rise Time 12 15 ID=1A, VGEN=10V ns td(off) Turn-Off Delay Time 43 55 RG=6Ω tf Turn-On Fall Time 4 6
