TSM060NB06CZ

Taiwan Semiconductor

N-Channel Power MOSFET

60V, 111A, 6mΩ

FEATURES KEY PERFORMANCE PARAMETERS

● Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT
● Low gate charge for fast power switching
VDS 60 V
● 100% UIS and Rg Tested
VGS = 10V 6
● RoHS Compliant RDS(on) (max) mΩ
● Halogen-free according to IEC 61249-2-21 VGS = 7V 8.4
Qg 103 nC
APPLICATIONS
● BLDC Motor Control
● Battery Power Management
● DC-DC Converter
● Secondary Synchronous Rectification
TO-220

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
(Note 1) TC = 25°C 111
Continuous Drain Current ID A
TA = 25°C 13
Pulsed Drain Current IDM 444 A
(Note 2)
Single Pulse Avalanche Current IAS 39 A
(Note 2)
Single Pulse Avalanche Energy EAS 228 mJ
TC = 25°C 156
Total Power Dissipation PD W
TC = 125°C 31
TA = 25°C 2
Total Power Dissipation PD W
TA = 125°C 0.4
Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C

THERMAL PERFORMANCE
PARAMETER SYMBOL MAXIMUM UNIT
Junction to Case Thermal Resistance RӨJC 0.8 °C/W
Junction to Ambient Thermal Resistance RӨJA 62 °C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. R ӨJC is guaranteed by design while RӨCA is
determined by the user’s board design.

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Taiwan Semiconductor

ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)

PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT
Static
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 60 -- -- V
Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 2 3 4 V
Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA
VGS = 0V, VDS = 60V -- -- 1
Drain-Source Leakage Current VGS = 0V, VDS = 60V IDSS µA
-- -- 100
TJ = 125°C
Drain-Source On-State Resistance VGS = 10V, ID = 13A -- 4.7 6
(Note 3) RDS(on) mΩ
VGS = 7V, ID = 11A -- 5.1 8.4
(Note 3)
Forward Transconductance VDS = 10V, ID = 13A gfs -- 62 -- S
(Note 4)
Dynamic
VGS = 10V, VDS = 30V,
Total Gate Charge Qg -- 103 --
ID = 13A
Total Gate Charge Qg -- 74 -- nC
VGS = 7V, VDS = 30V,
Gate-Source Charge Qgs -- 35 --
ID = 11A
Gate-Drain Charge Qgd -- 19 --
Input Capacitance Ciss -- 6842 --
VGS = 0V, VDS = 30V,
Output Capacitance Coss -- 387 -- pF
f = 1.0MHz
Reverse Transfer Capacitance Crss -- 115 --
Gate Resistance f = 1.0MHz Rg 0.6 1.9 3.8 Ω
(Note 4)
Switching
Turn-On Delay Time td(on) -- 19 --
Turn-On Rise Time VGS = 10V, VDS = 30V, tr -- 51 --
ns
Turn-Off Delay Time ID = 13A, RG = 2Ω td(off) -- 65 --
Turn-Off Fall Time tf -- 35 --
Source-Drain Diode
(Note 3)
Forward Voltage VGS = 0V, IS = 13A VSD -- -- 1 V
Reverse Recovery Time IS = 13A, trr -- 28 -- ns
Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 27 -- nC
Notes:
1. Silicon limited current only.
2. L = 0.3mH, VGS = 10V, VDD = 30V, RG = 25Ω, IAS = 39A, Starting TJ = 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

ORDERING CODE PACKAGE PACKING

TSM060NB06CZ C0G TO-220 50pcs / Tube

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Taiwan Semiconductor

CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)

Output Characteristics Transfer Characteristics

50 50

40 40

ID, Drain Current (A)

ID, Drain Current (A)

VGS=10V
VGS=9V
30 VGS=8V 30
VGS=7V
VGS=6V 25℃
VGS=5V
20 20

-55℃
10 10
150℃

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V)

On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge

RDS(on), Drain-Source On-Resistance (Ω)

0.008 10
VGS, Gate to Source Voltage (V)

VDS=30V
8 ID=13A
0.006
VGS=7V

6
0.004
VGS=10V
4

0.002
2

0 0
0 10 20 30 40 50 0 30 60 90 120
ID, Drain Current (A) Qg, Gate Charge (nC)

On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage

2.5 0.03
RDS(on), Drain-Source On-Resistance

RDS(on), Drain-Source On-Resistance (Ω)

VGS=10V 0.025
2 ID=13A

0.02
(Normalized)

1.5

0.015
1
0.01
ID=13A
0.5
0.005

0 0
-75 -50 -25 0 25 50 75 100 125 150 4 5 6 7 8 9 10
TJ, Junction Temperature (°C) VGS, Gate to Source Voltage (V)

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Taiwan Semiconductor

CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)

Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature

9000 1.2

Drain-Source Breakdown Voltage

8000 ID=1mA
Ciss
C, Capacitance (pF)

BVDSS (Normalized)
7000
1.1
6000

5000
1
4000
Crss
3000

2000 0.9

1000
Coss
0 0.8
0 10 20 30 40 50 60 -75 -50 -25 0 25 50 75 100 125 150
VDS, Drain to Source Voltage (V) TJ, Junction Temperature (°C)

Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage
1000 100
IS, Reverse Drain Current (A)

RDS(ON)
ID, Drain Current (A)

100 10

150℃
25℃ -55℃
10 1

SINGLE PULSE
RӨJC=0.8°C/W
TC=25°C

1 0.1
0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2
VDS, Drain to Source Voltage (V) VSD, Body Diode Forward Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

10
SINGLE PULSE
Normalized Effective Transient

RӨJC=0.8°C/W
Thermal Impedance, ZӨJC

Duty=0.5
Duty=0.2
0.1 Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01 Notes:
Single Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
0.01
0.0001 0.001 0.01 0.1 1
t, Square Wave Pulse Duration (sec)

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Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)

TO-220

MARKING DIAGRAM

Y = Year Code
TSC WW = Week Code (01~52)
060NB06
YWWLF
L = Lot Code (1~9,A~Z)
F = Factory Code

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Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.

Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.

6 Version: A2008