The document describes a series of complementary silicon power transistors (BD533/534/535/536/537/538) in TO-220 plastic packages. It provides maximum ratings, thermal characteristics, and electrical characteristics for the NPN and PNP transistor types. Dimensions for the TO-220 package are also specified.
The document describes a series of complementary silicon power transistors (BD533/534/535/536/537/538) in TO-220 plastic packages. It provides maximum ratings, thermal characteristics, and electrical characteristics for the NPN and PNP transistor types. Dimensions for the TO-220 package are also specified.
The document describes a series of complementary silicon power transistors (BD533/534/535/536/537/538) in TO-220 plastic packages. It provides maximum ratings, thermal characteristics, and electrical characteristics for the NPN and PNP transistor types. Dimensions for the TO-220 package are also specified.
The document describes a series of complementary silicon power transistors (BD533/534/535/536/537/538) in TO-220 plastic packages. It provides maximum ratings, thermal characteristics, and electrical characteristics for the NPN and PNP transistor types. Dimensions for the TO-220 package are also specified.
■ BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. 3 The complementary PNP types are BD534, 2 1 BD536, and BD538 respectively. TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t NPN BD533 BD535 BD537 PNP BD534 BD536 BD538 V CBO Collector-Base Voltage (IE = 0) 45 60 80 V V CES Collector-Emitter Voltage (V BE = 0) 45 60 80 V V CEO Collector-Emitter Voltage (I B = 0) 45 60 80 V V EBO Emitter-Base Voltage (I C = 0) 5 V I C, I E Collector and Emitter Current 8 A IB Base Current 1 A P t ot Total Dissipation at T c ≤ 25 C o 50 W o T stg Storage Temperature -65 to 150 C o Tj Max. O perating Junction Temperature 150 C For PNP types voltage and current values are negative.
June 1997 1/4
BD533/BD534/BD535/BD536/BD537/BD538
THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 2.5 C/W o R t hj- amb Thermal Resistance Junction-ambient Max 70 C/W
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CBO Collector Cut-off for BD533/534 V CB = 45 V 100 µA Current (IE = 0) for BD535/536 V CB = 60 V 100 µA for BD537/538 V CB = 80 V 100 µA I CES Collector Cut-off for BD533/534 V CE = 45 V 100 µA Current (V BE = 0) for BD535/536 V CE = 60 V 100 µA for BD537/538 V CE = 80 V 100 µA I EBO Emitter Cut-off Current V EB = 5 V 1 mA (I C = 0) V CEO(sus )∗ Collector-Emitter I C = 100 mA for BD533/534 45 V Sustaining Voltage for BD535/536 60 V (IB = 0) for BD537/538 80 V V CE(sat )∗ Collector-Emitter IC = 2 A I B = 0.2 A 0.8 V Saturation Voltage IC = 6 A I B = 0.6 A 0.8 V V BE ∗ Base-Emitter Voltage IC = 2 A V CE = 2 V 1.5 V h FE∗ DC Current G ain I C = 10 mA V CE = 5 V for BD533/534 20 for BD535/536 20 for BD537/538 15 I C = 500 mA V CE = 2 V 40 IC = 2 A V CE = 2 V for BD533/534 25 for BD535/536 25 for BD537/538 15 fT Transition frequency I C = 500 mA V CE = 1 V 3 12 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative.
Safe Operating Areas
2/4 BD533/BD534/BD535/BD536/BD537/BD538
TO-220 MECHANICAL DATA
mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151
P011C 3/4 BD533/BD534/BD535/BD536/BD537/BD538
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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