BDP947_BDP949_BDP953

Silicon NPN Transistors

• For AF driver and output stages

4 3
• High collector current 2
• High current gain 1

• Low collector-emitter saturation voltage

• Complementary types: BDP948, BDP950,
BDP954 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101

Type Marking Pin Configuration Package

BDP947 BDP947 1=B 2=C 3=E 4=C - - SOT223
BDP949 BDP949 1=B 2=C 3=E 4=C - - SOT223
BDP953 BDP953 1=B 2=C 3=E 4=C - - SOT223

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 BDP947_BDP949_BDP953

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO V
BDP947 45
BDP949 60
BDP953 100
Collector-base voltage VCBO
BDP947 45
BDP949 60
BDP953 120
Emitter-base voltage VEBO 5
Collector current IC 3 A
Peak collector current, tp ≤ 10 ms ICM 5
Base current IB 200 mA
Peak base current, tp ≤ 10 ms IBM 500
Total power dissipation- Ptot 5 W
TS ≤ 100 °C
Junction temperature Tj 150 °C
Storage temperature Tstg -65 ... 150

Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 10 K/W

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 BDP947_BDP949_BDP953

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V
IC = 10 mA, IB = 0 , BDP947 45 - -
IC = 10 mA, IB = 0 , BDP949 60 - -
IC = 10 mA, IB = 0 , BDP953 100 - -
Collector-base breakdown voltage V(BR)CBO
IC = 100 µA, IE = 0 , BDP947 45 - -
IC = 100 µA, IE = 0 , BDP949 60 - -
IC = 0 , IE = 100 µA, BDP953 120 - -
Emitter-base breakdown voltage V(BR)EBO 5 - -
IE = 10 µA, IC = 0
Collector-base cutoff current ICBO µA
VCB = 45 V, IE = 0 - - 0.1
VCB = 45 V, IE = 0 , TA = 150 °C - - 20
Emitter-base cutoff current IEBO - - 100 nA
VEB = 4 V, IC = 0
DC current gain2) hFE -
IC = 10 mA, VCE = 5 V 25 - -
IC = 500 mA, VCE = 1 V 100 - 475
IC = 2 A, VCE = 2 V, BDP947, BDP949 50 - -
IC = 2 A, VCE = 2 V, BDP953 15 - -
Collector-emitter saturation voltage2) VCEsat - - 0.5 V
IC = 2 A, IB = 0.2 A
Base emitter saturation voltage2) VBEsat - - 1.3
IC = 2 A, IB = 0.2 A

AC Characteristics
Transition frequency fT - 100 - MHz
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance Ccb - 25 - pF
VCB = 10 V, f = 1 MHz
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%

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 BDP947_BDP949_BDP953

DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage

VCE = 2 V IC = ƒ(VCEsat ), hFE = 10

10 3 10 4

mA
100°C
-

25°C 10 3
-55°C
10 2
hFE

IC
100°C
25°C
10 2 -50°C

10 1

10 1

10 0 0 1 2 3 4
10 0
10 10 10 10 mA 10 0 0.1 0.2 0.3 0.4 V 0.6
IC VCEsat

Base-emitter saturation voltage Collector current IC = ƒ(VBE)

IC = (VBEsat), hFE = 10 VCE = 2 V

10 4 10 4

mA mA

10 3 10 3

-50°C -50°C
25°C 25°C
IC

IC

100°C 100°C

10 2 10 2

10 1 10 1

10 0 10 0
0 0.2 0.4 0.6 0.8 1 V 1.3 0 0.2 0.4 0.6 0.8 1 V 1.3
VBEsat VBE

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 BDP947_BDP949_BDP953

Collector cutoff current ICBO = ƒ(TA) Collector-base capacitance Ccb = ƒ(VCB)

VCB = 45 V Emitter-base capacitance Ceb = ƒ(VEB)

10 5 500
nA
pF

10 4
400

CCB(CEB )
350
10 3
ICB0

300
max

10 2 250
CEB
200
10 1
150
typ

100
10 0

50
CCB
10 -1 0
0 20 40 60 80 100 120 °C 150 0 4 8 12 16 V 22
TA VCB(VEB

Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp)

5.5 10 2

4.5

4
10 1
RthJS
Ptot

3.5

D = 0,5
2.5
0,2
0,1
2
10 0 0,05
0,02
1.5
0,01
0,005
1
0
0.5

0 10 -1 -6 -5 -4 -3 -2 0
0 15 30 45 60 75 90 105 120 °C 150 10 10 10 10 10 s 10
ts tp

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 BDP947_BDP949_BDP953

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp )

10 3

-
Ptotmax/PtotDC

D=0
10 2 0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1

10 0 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10
tp

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 Package SOT223 BDP947_BDP949_BDP953

Package Outline 1.6±0.1

6.5 ±0.2
A
3 ±0.1 0.1 MAX.

4 B

15˚ MAX.

3.5 ±0.2
7 ±0.3
1 2 3

0.5 MIN.
0.7 ±0.1 2.3 0.28 ±0.04
4.6 0...10˚
0.25 M A
0.25 M B
Foot Print 3.5

1.4
4.8
1.4

1.2 1.1

Marking Layout (Example)

Manufacturer
2005, 24 CW
Date code (YYWW)

BCP52-16
Type code

Pin 1

Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
8 0.3 MAX.
12
7.55

6.8 1.75
Pin 1

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 BDP947_BDP949_BDP953

Edition 2009-11-16

Published by
Infineon Technologies AG
81726 Munich, Germany

 2009 Infineon Technologies AG

All Rights Reserved.

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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
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For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).

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For information on the types in question, please contact the nearest Infineon
Technologies Office.
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