MCC



omponents
BC546,B
21201 Itasca Street Chatsworth

BC547,A,B,C
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BC548,A,B,C
Features NPN Silicon
l Through Hole Package
l 150oC Junction Temperature Amplifier Transistor
Pin Configuration 625mW
Bottom View C B E

TO-92
Mechanical Data A E

l Case: TO-92, Molded Plastic

l Polarity: indicated as above. B

Maximum Ratings @ 25oC Unless Otherwise Specified

Charateristic Symbol Value Unit

Collector-Emitter Voltage BC546 65
C
BC547 VCEO 45 V
BC548 30
Collector-Base Voltage BC546 80
BC547 VCBO 50 V
BC548 30
Emitter-Base Voltage VEBO 6.0 V D

Collector Current(DC) IC 100 mA

625 mW
Power Dissipation@TA=25oC Pd
5.0 mW/oC
1.5 W
Power Dissipation@TC=25oC Pd G
12 mW/oC
Thermal Resistance, Junction to o
DIMENSIONS

RqJA 200 C/W

Ambient Air DIM
INCHES
MIN MAX
MM
MIN MAX NOTE
A .175 .185 4.45 4.70
Thermal Resistance, Junction to o B .175 .185 4.46 4.70
RqJC 83.3 C/W C .500 --- 12.7 ---
Case D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
o
Operating & Storage Temperature Tj, TSTG -55~150 C G .095 .105 2.42 2.67

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BC546 thru BC548C MCC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC546 V(BR)CEO 65 — — V
(IC = 1.0 mA, IB = 0) BC547 45 — —
BC548 30 — —
Collector–Base Breakdown Voltage BC546 V(BR)CBO 80 — — V
(IC = 100 µAdc) BC547 50 — —
BC548 30 — —
Emitter–Base Breakdown Voltage BC546 V(BR)EBO 6.0 — — V
(IE = 10 A, IC = 0) BC547 6.0 — —
BC548 6.0 — —

ON CHARACTERISTICS
DC Current Gain hFE —
(IC = 10 µA, VCE = 5.0 V) BC547A/548A — 90 —
BC546B/547B/548B — 150 —
BC548C — 270 —

(IC = 2.0 mA, VCE = 5.0 V) BC546 110 — 450

BC547 110 — 800
BC548 110 — 800
BC547A/548A 110 180 220
BC546B/547B/548B 200 290 450
BC547C/BC548C 420 520 800

(IC = 100 mA, VCE = 5.0 V) BC547A/548A — 120 —

BC546B/547B/548B — 180 —
BC548C — 300 —

Collector–Emitter Saturation Voltage VCE(sat) V

(IC = 100 mA, IB = 5.0 mA) — --- 0.3

Base–Emitter Saturation Voltage VBE(sat) — — 1.0 V

(IC = 100 mA, IB = 5.0 mA)
Base–Emitter On Voltage VBE(on) V
(IC = 2.0 mA, VCE = 5.0 V) 0.55 — 0.7
(IC = 10 mA, VCE = 5.0 V) — — 0.77

SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product fT MHz
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC546 150 300 —
BC547 150 300 —
BC548 150 300 —
Output Capacitance Cobo — 1.7 4.5 pF
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Input Capacitance Cibo — 10 — pF
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Small–Signal Current Gain hfe —
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC546 125 — 500
BC547/548 125 — 900
BC547A/548A 125 220 260
BC546B/547B/548B 240 330 500
BC547C/548C 450 600 900
Noise Figure NF dB
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 k
, BC546 — 2.0 10
f = 1.0 kHz, ∆f = 200 Hz) BC547 — 2.0 10
BC548 — 2.0 10

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BC546 thru BC548C
MCC
2.0 1.0
VCE = 10 V 0.9 TA = 25°C
hFE , NORMALIZED DC CURRENT GAIN

1.5
TA = 25°C
0.8 VBE(sat) @ IC/IB = 10
1.0 0.7

V, VOLTAGE (VOLTS)
0.8 0.6 VBE(on) @ VCE = 10 V

0.6 0.5
0.4
0.4 0.3

0.3 0.2
VCE(sat) @ IC/IB = 10
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages

2.0 1.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)

θVB, TEMPERATURE COEFFICIENT (mV/ °C)

TA = 25°C -55°C to +125°C

1.2
1.6
IC = 200 mA
1.6
1.2
IC = IC = IC = 50 mA IC = 100 mA
2.0
10 mA 20 mA
0.8
2.4

0.4
2.8

0
0.02 0.1 1.0 10 20 0.2 1.0 10 100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient

BC547/BC548
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

10 400
300
7.0 TA = 25°C
200
C, CAPACITANCE (pF)

5.0 Cib

VCE = 10 V
100
3.0 TA = 25°C
80
Cob
60
2.0
40
30

1.0 20
f,

0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product

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BC546 thru BC548C
MCC
BC547/BC548

1.0
hFE , DC CURRENT GAIN (NORMALIZED)

TA = 25°C
VCE = 5 V
TA = 25°C 0.8
VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
2.0
0.6
VBE @ VCE = 5.0 V
1.0
0.4
0.5

0.2
0.2
VCE(sat) @ IC/IB = 10
0
0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain Figure 8. “On” Voltage

2.0 -1.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

θVB, TEMPERATURE COEFFICIENT (mV/ °C)

TA = 25°C
1.6 -1.4
20 mA 50 mA 100 mA 200 mA
1.2 -1.8
θVB for VBE
IC = -55°C to 125°C
0.8 -2.2
10 mA

0.4 -2.6

0 -3.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient

BC546
40
T CURRENT-GAIN - BANDWIDTH PRODUCT

TA = 25°C VCE = 5 V
500 TA = 25°C
20
C, CAPACITANCE (pF)

Cib
200

10
100

6.0 50

4.0 Cob
20
f,

2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product

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