This document provides specifications for the BC546/BC547/BC548 NPN transistor in a TO-92 plastic package. It lists maximum ratings such as collector-emitter voltage, collector current and power dissipation. Electrical characteristics include breakdown voltages, current gains, saturation voltages and transition frequency. These transistors feature high voltage operation and are complements to the BC556/BC557/BC558 transistors.
This document provides specifications for the BC546/BC547/BC548 NPN transistor in a TO-92 plastic package. It lists maximum ratings such as collector-emitter voltage, collector current and power dissipation. Electrical characteristics include breakdown voltages, current gains, saturation voltages and transition frequency. These transistors feature high voltage operation and are complements to the BC556/BC557/BC558 transistors.
This document provides specifications for the BC546/BC547/BC548 NPN transistor in a TO-92 plastic package. It lists maximum ratings such as collector-emitter voltage, collector current and power dissipation. Electrical characteristics include breakdown voltages, current gains, saturation voltages and transition frequency. These transistors feature high voltage operation and are complements to the BC556/BC557/BC558 transistors.
This document provides specifications for the BC546/BC547/BC548 NPN transistor in a TO-92 plastic package. It lists maximum ratings such as collector-emitter voltage, collector current and power dissipation. Electrical characteristics include breakdown voltages, current gains, saturation voltages and transition frequency. These transistors feature high voltage operation and are complements to the BC556/BC557/BC558 transistors.
FEATURES z High Voltage z Complement to BC556,BC557,BC558 1. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. BASE
Symbol Parameter Value Unit 3. EMITTER
Collector-Base Voltage BC546 80
VCBO BC547 50 V BC548 30
Collector-Emitter Voltage BC546 65
VCEO BC547 45 V BC548 30 VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 100 mA PD Total Device Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃
