BU806/807

BU806/807

High Voltage & Fast Switching Darlington

Transistor
• Using In Horizontal Output Stages of 110°° Crt Video Displays
• BUILT-IN SPEED-UP Diode Between Base and Emitter

1 TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BU806 400 V
: BU807 330 V
VCEO Collector-Emitter Voltage
: BU806 200 V
: BU807 150 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current (DC) 8 A
ICP *Collector Current (Pulse) 15 A
IB Base Current 2 A
PC Collector Dissipation (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
VCEO (sus) * Collector-Emitter Sustaining Voltage
: BU806 IC = 100mA, IB = 0 200 V
: BU807 150 V
ICES Collector Cut-off Current
: BU806 VCE = 400V, VBE = 0 100 µA
: BU807 VCE = 330V, VBE = 0 100 µA
ICEV Collector Cut-off Current
: BU806 VCE = 400V, VBE = -6V 100 µA
: BU807 VCE = 330V, VBE = -6V 100 µA
IEBO Emitter Cut-off Current VBE = 6V, IC = 0 3 mA
VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 50mA 1.5 V
VBE(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 50mA 2.4 V
VF * Damper Diode Forward Voltage IF = 4A 2 V
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BU806/807
Typical Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000 10

Ic = 100 IB
hFE, DC CURRENT GAIN

VBE(sat)

V CE = 5V
100 1
V CE = 1.5V

V CE(sat)

10 0.1
0.1 1 10 0.1 1 10 100

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

10 1000

100
IC[A], COLLECTOR CURRENT
Vf[V], FORWARD VOLTAGE

IC MAX. (Pulse) 1ms

10 10us

500
10
m
IC MAX. (DC)

us
s
DC
1
100us
1

0.1

BU806
BU807
0.1 0.01
0.1 1 10 0.01 0.1 1 10 100 1000

IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Damper Diode Figure 4. Safe Operating Area

80

70
PC[W], POWER DISSIPATION

60

50

40

30

20

10

0
0 50 100 150 200

o
TC[ C], CASE TEMPERATURE

Figure 5. Power Derating

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BU806/807
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A, February 2000

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8

Bottomless™ ISOPLANAR™ SyncFET™
CoolFET™ MICROWIRE™ TinyLogic™
CROSSVOLT™ POP™ UHC™
E2CMOS™ PowerTrench® VCX™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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As used herein:
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or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2000 Fairchild Semiconductor International Rev. E