This document provides specifications for the SS9013 1W output amplifier transistor. It lists key characteristics such as maximum power dissipation of 625mW, collector current of 500mA, and breakdown voltages. Tables provide gain, saturation voltage, and other electrical characteristic ratings.
This document provides specifications for the SS9013 1W output amplifier transistor. It lists key characteristics such as maximum power dissipation of 625mW, collector current of 500mA, and breakdown voltages. Tables provide gain, saturation voltage, and other electrical characteristic ratings.
This document provides specifications for the SS9013 1W output amplifier transistor. It lists key characteristics such as maximum power dissipation of 625mW, collector current of 500mA, and breakdown voltages. Tables provide gain, saturation voltage, and other electrical characteristic ratings.
This document provides specifications for the SS9013 1W output amplifier transistor. It lists key characteristics such as maximum power dissipation of 625mW, collector current of 500mA, and breakdown voltages. Tables provide gain, saturation voltage, and other electrical characteristic ratings.
Class B Push-pull Operation. • • High total power dissipation. (PT=625mW) • • High Collector Current. (IC=500mA) • • Complementary to SS9012 • • Excellent hFE linearity. 1 TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 A PC Collector Dissipation 625 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =100µA, IE =0 40 V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 20 V BVEBO Emitter-Base Breakdown Voltage IE =100µA, IC =0 5 V ICBO Collector Cut-off Current VCB =25V, IE =0 100 nA IEBO Emitter Cut-off Current VEB =3V, IC =0 100 nA hFE1 DC Current Gain VCE =1V, IC =50mA 64 120 202 hFE2 VCE =1V, IC =500mA 40 120 VCE (sat) Collector-Emitter Saturation Voltage IC =500mA, IB =50mA 0.16 0.6 V VBE (sat) Base-Emitter Saturation Voltage IC =500mA, IB =50mA 0.91 1.2 V VBE (on) Base-Emitter On Voltage VCE =1V, IC =10mA 0.6 0.67 0.7 V
hFE Classification Classification D E F G H hFE1 64 ~ 91 78 ~ 112 96 ~ 135 112 ~ 166 144 ~ 202
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for Design product development. Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
