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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC3421
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
: V(BR)CEO= 120V(Min)
·Complement to Type 2SA1358
APPLICATIONS
·Designed for audio frequency power amplifier applications.
·Suitable for driver of 60 to 80 Watts audio amplifier.
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ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
m i. c
VCBO Collector-Base Voltage
i s
120
c s
V
e
w .
w
VCEO Collector-Emitter Voltage 120 V
VEBO
IC
w
Emitter-Base Voltage
Collector Current-Continuous
5
1
V
IBB Base Current-Continuous 0.1 A
Collector Power Dissipation
10
@ TC=25℃
PC W
Collector Power Dissipation
1.5
@ Ta=25℃
TJ Junction Temperature 150 ℃
Tstg Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC3421
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 120 V
V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 5 V
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.0 V
VBE(on) Base-Emitter On Voltage IC= 500mA ; VCE= 5V 1.0 V
ICBO Collector Cutoff Current VCB= 120V; IE= 0 0.1 μA
c n
μA
.
IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1
em i
s
hFE DC Current Gain IC= 0.1A ; VCE= 5V 80 240
.i s c
ww
fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 5V 120 MHz
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COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz 15 pF
hFE Classifications
O Y
80-160 120-240
isc Website：www.iscsemi.cn 2
