The document provides the product specification for the ISC Silicon PNP Power Transistor model 2SA614. Some key specifications include:
- Collector-Emitter Breakdown Voltage of -55V minimum.
- Collector-Emitter Saturation Voltage of -0.5V maximum at -1A collector current.
- Collector Power Dissipation of 25W at 25°C case temperature.
It is designed for medium power amplifier applications and lists maximum ratings and electrical characteristics for the transistor.
The document provides the product specification for the ISC Silicon PNP Power Transistor model 2SA614. Some key specifications include:
- Collector-Emitter Breakdown Voltage of -55V minimum.
- Collector-Emitter Saturation Voltage of -0.5V maximum at -1A collector current.
- Collector Power Dissipation of 25W at 25°C case temperature.
It is designed for medium power amplifier applications and lists maximum ratings and electrical characteristics for the transistor.
The document provides the product specification for the ISC Silicon PNP Power Transistor model 2SA614. Some key specifications include:
- Collector-Emitter Breakdown Voltage of -55V minimum.
- Collector-Emitter Saturation Voltage of -0.5V maximum at -1A collector current.
- Collector Power Dissipation of 25W at 25°C case temperature.
It is designed for medium power amplifier applications and lists maximum ratings and electrical characteristics for the transistor.
The document provides the product specification for the ISC Silicon PNP Power Transistor model 2SA614. Some key specifications include:
- Collector-Emitter Breakdown Voltage of -55V minimum.
- Collector-Emitter Saturation Voltage of -0.5V maximum at -1A collector current.
- Collector Power Dissipation of 25W at 25°C case temperature.
It is designed for medium power amplifier applications and lists maximum ratings and electrical characteristics for the transistor.
