LEF75G602 SISPM™

600V 75A 4-Pack IGBT Module

Features Preliminary data

• Non punch through (NPT) Technology
• Ultra-fast
• 10μs Short circuit current
• Positive VCE(on) temperature coefficient
• Free wheeling diodes with fast and soft reverse recovery

Applications
• Power supply
• UPS / Inverter

SISPM1
82.0 x 37.4 x 21.2mm

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Item Symbol Conditions Value Units
VCES 600 V
VGES ± 20 V
@Tj= 150 °C, TC = 25 °C, Continuous 75 A
IC
@Tj= 150 °C, TC = 80 °C, Continuous 50 A
IGBT ICM @ tP = 1 ms 150 A
TSC Chip Level, @Tj = 150 °C, VGE= 15 V, VCES < 600 V 10 μs
Tj Operating Junction Temperature *(1) -40~125 °C
@Tj= 150 °C, TC = 25 °C 250 W
PD
@Tj= 150 °C, TC = 80 °C 150 W
VRRM 600 V
@Tj=175 °C, TC = 25 °C, Continuous 100 A
IF
Diode @Tj= 175 °C, TC = 80 °C, Continuous 75 A
IFRM @ tP= 1 ms 150 A
Tj Operating Junction Temperature *(2) -40~125 °C
Tstg Storage Temperature -40~125 °C
Viso @AC 1minute 2500 V
Module
Mt Main Terminal Mounting torque (M4) 2.0~2.2 Nm
W Weight 50 g

Internal Circuit & Pin Description

Pin Number Pin Name Pin Description
1~6, 29~34 U, V U, V Output
7~9, 26~28 P Positive DC Link Output
10~12, 23~25 N Negative DC Link Output
13,22 GUH, GVH Gate Input for High-side
14,21 EUH, EVH Emitter Input for High-side
15,20 GUL, GVL Gate Input for Low-side
16,19 EUL, EVL Emitter Input for Low-side
17,18 NTC

(Note *1) The Maximum junction temperature of chip is 150°C.

(Note *2) The Maximum junction temperature of chip is 175°C.

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Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Static Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVCES C-E Breakdown Voltage VGE = 0 V, IC = 250 μA 600 - - V
ICES C-E Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - - nA
VGE(th) G-E Threshold Voltage VGE = VCE, IC = 75 mA - 5.7 - V

Collector to Emitter IC = 75 A, VGE = 15 V, TC = 25 °C - 3.1 - V

VCE(sat)
Saturation Voltage IC = 75 A, VGE = 15 V, TC= 125 °C - 3.7 - V

Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
Cies Input Capacitance - 4.4 - nF
VCE = 25 V, VGE = 0 V
Coes Output Capacitance - 0.5 - nF
f = 1MHz, TC = 25 °C
Cres Reverse Transfer Capacitance - 0.3 - nF
td(on) Turn-On Delay Time - 92 - ns
tr Rise Time - 69 - ns
td(off) Turn-Off Delay Time TC = 125 °C, RG = 25 Ω - 433 - ns
L = 100 μH, VDC = 300 V
tf Fall Time - 26 - ns
VGE = 15 V ~ -15 V
Eon Turn-On Switching Loss IC = 75 A - 3.1 - mJ
Eoff Turn-Off Switching Loss - 1.3 - mJ
Ets Total Switching Loss - 4.4 - mJ
Qg Total Gate Charge - 300 - nC
Qge Gate-Emitter Charge VGE = 0 V ~ +15 V - 110 - nC
Qgc Gate-Collector Charge - 70 - nC

Electrical Characteristics of Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
IF = 75 A TC = 25 °C - 1.5 -
VF Diode Forward Voltage V
VGE = 0 V TC = 25 °C - 1.3 -
TC = 25 °C - 250 -
trr Diode Reverse Recovery Time ns
TC = 25 °C - 285 -
RG = 25 Ω TC = 25 °C - 38 -
IRRM Diode Peak Reverse Recovery Current A
L=100 μH TC = 125 °C - 93 -
VDC= 300 V
VGE = 15 V ~ -15 V TC = 25 °C - 3.2 -
Qrr Diode Reverse Recovery Charge μC
IC = 75 A TC = 125 °C - 9.8 -
TC = 25 °C - 0.6 -
Err Diode Reverse Recovery Energy mJ
TC = 125 °C - 1.8 -

Thermal Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
Rth(J-C) Thermal Resistance (IGBT) Junction-to-Case - 0.43 - °C/W
Rth(J-C) Thermal Resistance (Diode) Junction-to-Case - 0.68 - °C/W

NTC thermistor Characteristics

Symbol Parameter Test Conditions Min Typ Max Units
R25 Resistance TC = 25°C 22 kΩ
P Power TC = 25°C 210 mW
B25/100 B constant TC = 25°C, ± 3% tolerance - 4000 - K

* This specifications may not be considered as an assurance of characteristics and may not have same characteristics.
in case of using different test systems from @LSIS. We therefore strongly recommend prior consultation of our engineers.

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Fig 1. Typical IGBT Output Characteristics Fig 2. Typical IGBT Output Characteristics

Fig 3. Typical IGBT Output Characteristics Fig 4. Typical Diode Forward Characteristics

Fig 5. Typical Switching Time vs. Collector Current Fig 6. Typical Switching Time vs. Collector Current

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Fig 7. Typical Switching Time vs. Gate Resistor Fig 8. Typical Switching Time vs. Gate Resistor

Fig 9. Typical IGBT Switching Loss Fig 10. Typical IGBT Switching Loss

Fig 11. Typical Recovery Characteristics of Diode Fig 12. Typical Recovery Characteristics of Diode

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Fig 13. Typical Diode Switching Loss Fig 14. Typical Diode Switching Loss

Fig 15. Typical Gate Charge Characteristics Fig 16. Case Temperature vs. Collector Current

Fig 17. Case Temperature vs. Diode Current Fig 18. Switching Frequency vs. Collector Current

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Fig 19. Typical Thermistor Characteristics Fig 20. Typical IGBT Thermal Impedance

Fig 21. Typical Diode Thermal Impedance

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Package Dimension(Dimension in mm)

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