STGW60H65DFB-4

Datasheet

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Features
• Maximum junction temperature: TJ = 175 °C
• Excellent switching performance thanks to the extra driving kelvin pin
• Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A
• Minimized tail current
4
2
3 • Tight parameter distribution
1 • Safe paralleling
TO247-4 • Low thermal resistance
C(1, TAB)
• Very fast soft recovery antiparallel diode

Applications
G(4)
• Photovoltaic inverters
K(3)
• High-frequency converters

E(2)
NG4K3E2C1_TAB Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the new HB series of IGBTs, which represents an
optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. A faster switching event can be achieved by
the Kelvin pin, which separates power path from driving signal. Furthermore, the
slightly positive VCE(sat) temperature coefficient and very tight parameter distribution
result in safer paralleling operation.

Product status link

STGW60H65DFB-4

Product summary

Order code STGW60H65DFB-4

Marking G60H65DFB
Package TO247-4
Packing Tube

DS11665 - Rev 3 - June 2019 www.st.com

For further information contact your local STMicroelectronics sales office.
 STGW60H65DFB-4
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 650 V

Continuous collector current at TC = 25 °C 80 (1)

IC A
Continuous collector current at TC = 100 °C 60

ICP (2) Pulsed collector current 240 A

Gate-emitter voltage ±20

VGE V
Transient gate-emitter voltage ±30
Continuous forward current at TC = 25 °C 80(1)
IF A
Continuous forward current at TC = 100 °C 60

IFP (2) Pulsed forward current 240 A

PTOT Total power dissipation at TC = 25 °C 375 W

TSTG Storage temperature range -55 to 150

°C
TJ Operating junction temperature range -55 to 175

1. Current level is limited by bond wires.

2. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 0.4

RthJC Thermal resistance junction-case diode 1.14 °C/W

RthJA Thermal resistance junction-ambient 50

DS11665 - Rev 3 page 2/15

 STGW60H65DFB-4
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter
V(BR)CES VGE = 0 V, IC = 2 mA 650 V
breakdown voltage
VGE = 15 V, IC = 60 A 1.6 2.0

VGE = 15 V, IC = 60 A,
Collector-emitter 1.75
VCE(sat) TJ = 125 °C V
saturation voltage
VGE = 15 V, IC = 60 A,
1.85
TJ = 175 °C

IF = 60 A 2 2.6

VF Forward on-voltage IF = 60 A, TJ = 125 °C 1.7 V

IF = 60 A, TJ = 175 °C 1.6

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA

Gate-emitter leakage
IGES VCE = 0 V, VGE = ±20 V ±250 nA
current

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance - 7792 -

Coes Output capacitance - 262 -

VCE= 25 V, f = 1 MHz, VGE = 0 V nF
Reverse transfer
Cres - 158 -
capacitance
Qg Total gate charge - 306 -
VCC = 520 V, IC = 60 A, VGE = 0
Qge Gate-emitter charge to 15 V (see Figure 29. Gate - 126 - nC
charge test circuit)
Qgc Gate-collector charge - 58 -

DS11665 - Rev 3 page 3/15

 STGW60H65DFB-4
Electrical characteristics

Table 5. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 65 - ns

tr Current rise time - 26 - ns

(di/dt)on Turn-on current slope - 1846 - A/µs

VCE = 400 V, IC = 60 A,
td(off) Turn-off-delay time - 261 - ns
VGE = 15 V, RG = 10 Ω (see
tf Current fall time Figure 28. Test circuit for - 21 - ns
inductive load switching)
Eon (1)
Turn-on switching energy - 346 - µJ

Eoff (2) Turn-off switching energy - 1161 - µJ

Ets Total switching energy - 1507 - µJ

td(on) Turn-on delay time - 61 - ns

tr Current rise time - 30 - ns

(di/dt)on Turn-on current slope - 1640 - A/µs

VCE = 400 V, IC = 60 A,
td(off) Turn-off-delay time VGE = 15 V, RG = 10 Ω - 284 - ns
TJ = 175 °C (see Figure 28. Test
tf Current fall time - 45 - ns
circuit for inductive load
Eon (1) switching )
Turn-on switching energy - 644 - μJ

Eoff (2)
Turn-off switching energy - 1633 - μJ

Ets Total switching energy - 2277 - μJ

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time - 60 - ns

Qrr Reverse recovery charge - 99 - nC

IF = 60 A, VR = 400 V,
Irrm Reverse recovery current - 3.3 - A
VGE = 15 V, di/dt = 1000 A/µs
Peak rate of fall of (see Figure 28. Test circuit for
dIrr/dt reverse recovery current inductive load switching) - 187 - A/µs
during tb

Err Reverse recovery energy - 68 - µJ

trr Reverse recovery time - 310 - ns

Qrr Reverse recovery charge - 1550 - nC

IF = 60 A, VR = 400 V,
Irrm Reverse recovery current VGE = 15 V, di/dt = 1000 A/µs, - 10 - A
TJ = 175 °C (see Figure 28. Test
Peak rate of fall of
circuit for inductive load
dIrr/dt reverse recovery current - 59 - A/µs
switching)
during tb

Err Reverse recovery energy - 674 - µJ

DS11665 - Rev 3 page 4/15

 STGW60H65DFB-4
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs. case temperature Figure 2. Collector current vs. case temperature
GIPD270820131401FSR GIPD270820131347FSR
Ptot IC
(W) (A)
80

300
60

200
40

100 20
VGE= 15 V, T J= 175 °C VGE= 15V, T J= 175 °C

0 0
0 25 50 75 100 125 150 TC(°C) 0 25 50 75 100 125 150 TC(°C)

Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C)

IC GIPD230820131147FSR IC GIPD230820131205FSR
(A) V GS = 13, 15 V (A) V GS = 13, 15 V

200 200
V GS = 11 V

160 V GS = 11 V
160

120 120
V GS = 9 V V GS = 9 V

80 80

40 40
V GS = 7V

0 0
0 1 2 3 4 V CE (V) 0 1 2 3 4 V CE (V)

Figure 5. VCE(sat) vs. junction temperature Figure 6. VCE(sat) vs. collector current
GIPD021020131457FSR GIPD270820131423FSR
VCE(sat) VCE(sat)
(V) (V) VGE= 15 V
2.6 VGE= 15 V IC= 120 A 2.4
2.4
2.2
2.2 TJ= 25 °C
2.0
2.0 IC= 60 A
1.8 TJ= 175 °C
1.8
1.6
1.6 IC= 30 A
TJ= -40 °C
1.4 1.4

1.2 1.2
-50 0 50 100 150 Tj(°C) 0 20 40 60 80 100 IC(A)

DS11665 - Rev 3 page 5/15

 STGW60H65DFB-4
Electrical characteristics (curves)

Figure 7. Collector current vs. switching frequency Figure 8. Forward bias safe operating area
IC IGBT130320171131CCS IC GIPG300320151744ALS
(A) (A)
120

it m
100 2 1µs

at) li
10
TC = 80 °C

E(s
VC
80
TC = 100 °C 10µs
60
1
10
40 100µs
Tj ≤175 °C
20 Tc = 25 °C 1ms
Rectangular current shape
(duty cycle = 0.5, VCC = 400 V, RG = 10 Ω, VGE = 15 V
0 VGE = 0/15 V, TJ = 175 °C) 10
0 single pulse
0 1 2
10 0 10 1 10 2 f (kHz) 10 10 10 VCE(V)

Figure 9. Transfer characteristics Figure 10. Diode VF vs. forward current

IC GIPD270820131335FSR
VF GIPG170415EWF7WDVF
(A) (V)
200 2.8
V CE = 6 V

160 2.4 T j = - 40 °C

120 2.0
T j = 25 °C
80 1.6
T j = 175 °C
40 1.2
T j = 175 °C T j = 25 °C

0 0.8
5 6 7 8 9 10 V GE (V) 20 40 60 80 100 I F (A)

Figure 11. Normalized VGE(th) vs. junction temperature Figure 12. Normalized V(BR)CES vs. junction temperature
GIPD280820131503FSR GIPD280820131415FSR
VGE(th) V(BR)CES
(norm) (norm)

IC= 1 mA
1.1

1.0 IC= 2 mA

0.9

1.0
0.8

0.7

0.6 0.9
-50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ(°C)

DS11665 - Rev 3 page 6/15

 STGW60H65DFB-4
Electrical characteristics (curves)

Figure 13. Capacitance variations Figure 14. Gate charge vs. gate-emitter voltage
GIPD280820131518FSR GIPD280820131507FSR
C(pF) VGE
(V)
f = 1 MHz
Vcc= 520 V, Ic= 60 A,
IG= 1 mA
14
10000
Cies
12
10
1000
8

6
100 Coes 4
Cres
2

10 0
0.1 1 10 100 VCE(V) 0 50 100 150 200 250 300 350 Qg(nC)

Figure 15. Switching energy vs. collector current Figure 16. Switching energy vs. gate resistance
E IGBT130320171132SLC E IGBT130320171132SLG
VGE = 15 V, TJ = 175 °C, VCC = 400 V, IC = 60 A,
(µJ) VCC = 400 V, RG = 10 Ω
(µJ) VGE = 15 V, TJ = 175 °C

3200 1800
Eoff Eoff

2400 1400

Eon
1600 1000

Eon
800 600

0 200
0 30 60 90 IC (A) 4 8 12 16 20 RG (Ω)

Figure 17. Switching energy vs. temperature Figure 18. Switching energy vs. collector emitter voltage
E IGBT130320171406SLT E IGBT130320171134SLV
(µJ) VCC = 400 V, IC = 60 A, (µJ) VGE = 15 V, TJ = 175 °C,
RG = 10 Ω, VGE = 15 V IC = 60 A, RG = 10 Ω

Eoff
1400 1700
Eoff

1000 1200

Eon
600 700
Eon

200 200
0 50 100 150 TJ (°C) 150 300 450 VCE (V)

DS11665 - Rev 3 page 7/15

 STGW60H65DFB-4
Electrical characteristics (curves)

Figure 19. Switching times vs. collector current Figure 20. Switching times vs. gate resistance
t IGBT130320171134STC t IGBT130320171506STR
VCC = 400 V, VGE = 15 V, (ns) VCC = 400 V, VGE = 15 V,
(ns)
RG = 10 Ω, TJ = 175 °C IC = 60 A, TJ = 175 °C
t d(off)

t d(off)

10 2 10 2
t d(on)
t r
t f

t f

tr t d(on)

10 1 10 1
0 40 80 IC (A) 4 8 12 16 20 RG (Ω)

Figure 21. Reverse recovery current vs. diode current slope Figure 22. Reverse recovery time vs. diode current slope
GIPD280820131635FSR GIPD280820131643FSR
Irm trr
(A) Vr= 400V, IF = 60A (ns) Vr = 400 V, I F = 60 A
80
300
70
TJ= 175°C 250
60
50 200
TJ = 175 °C
40 150
TJ= 25°C
30
100
20
50
10
TJ = 25 °C
0 0
0 500 1000 1500 2000 2500di/dt(A/µs) 0 500 1000 1500 2000 2500 di/dt(A/µs)

Figure 23. Reverse recovery charge vs. diode current Figure 24. Reverse recovery energy vs. diode current
slope slope
GIPD280820131635FSR GIPD280820131656FSR
Irm Err
(A) Vr= 400V, IF = 60A (µJ)
80

70 800
TJ= 175°C TJ = 175 °C
700
60
600
50
500 Vr = 400 V, I F = 60 A
40
TJ= 25°C 400
30
300
20 200
TJ = 25 °C
10 100
0 0
0 500 1000 1500 2000 2500di/dt(A/µs) 0 500 1000 1500 2000 2500 di/dt(A/µs)

DS11665 - Rev 3 page 8/15

 STGW60H65DFB-4
Electrical characteristics (curves)

Figure 25. Thermal impedance for IGBT

ZthTO2T_A
K

10-1
Zth
Zth= k*R
k R thj-c
thj-C
δδ==tptp/ Ƭ
/Ƭ

tpp
ƬƬ

10-2
10-5 10-4 10-3 10-2 10-1 tp (s)

Figure 26. Thermal impedance for diode

DS11665 - Rev 3 page 9/15

 STGW60H65DFB-4
Test circuits

3 Test circuits

Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit
VCC

A A
C 12 V 47 kΩ
1 kΩ
L=100 μH
G 100 nF

E B
B
3.3 1000 VCC
C μF μF Vi ≤ V IG=CONST
GMAX 100 Ω D.U.T.
G D.U.T
2200
µF 2.7 kΩ VG
RG
K E
47 kΩ

PW 1 kΩ

GND1 GND2 GND1

HB650_4_leads GND2
(signal ground) (power ground) (signal ground) (power ground)
GIPG030320161351SA

Figure 30. Diode reverse recovery waveform

Figure 29. Switching waveform

90%

VG 10%

90%

VCE tr(Voff)
10%
10
tcross

90%

IC td(off)
10%
td(on) tf
tr(Ion)
ton toff

AM01506v1

GADG140820170937SA

DS11665 - Rev 3 page 10/15

 STGW60H65DFB-4
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO247-4 package information

Figure 31. TO247-4 package outline

8405626_2

DS11665 - Rev 3 page 11/15

 STGW60H65DFB-4
TO247-4 package information

Table 7. TO247-4 mechanical data

mm
Dim.
Min. Typ. Max.

A 4.90 5.00 5.10

A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b 1.16 1.29
b1 1.15 1.20 1.25
b2 0 0.20
c 0.59 0.66
c1 0.58 0.60 0.62
D 20.90 21.00 21.10
D1 16.25 16.55 16.85
D2 1.05 1.20 1.35
D3 24.97 25.12 25.27
E 15.70 15.80 15.90
E1 13.10 13.30 13.50
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e 2.44 2.54 2.64
e1 4.98 5.08 5.18
L 19.80 19.92 20.10
P 3.50 3.60 3.70
P1 7.40
P2 2.40 2.50 2.60
Q 5.60 6.00
S 6.15
T 9.80 10.20
U 6.00 6.40

DS11665 - Rev 3 page 12/15

 STGW60H65DFB-4

Revision history

Table 8. Document revision history

Date Revision Changes

30-May-2016 1 First release.

Updated Table Absolute maximum ratings and Table IGBT switching characteristics (inductive load).
21-Mar-2017 2 Updated Section STGW60H65DFB-4 electrical characteristics curves.
Minor text changes
Updated title.
Updated Section Features and schematic diagram in cover page.
20-Jun-2019 3
Updated Table 1. Absolute maximum ratings.
Minor text changes.

DS11665 - Rev 3 page 13/15

 STGW60H65DFB-4
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 TO247-4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

DS11665 - Rev 3 page 14/15

 STGW60H65DFB-4

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DS11665 - Rev 3 page 15/15