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      Materials ScienceLithographyResistExtreme Ultraviolet Lithography
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The Semiconductor Industry Association Roadmap for Extreme Ultraviolet Lithography (EUVL) calls for significant improvements in the quality and flatness of the substrate and patterned mask. Due to the difficulty of meeting the mask... more
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We report on phenomena observed in planar integrated networks obtained connecting superconducting island by Josephson tunnel junctions. These networks, identifiable as tree-like graphs, have branches consisting of series arrays of... more
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Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter... more
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Nonuniform brightness distribution of collimator reticle images leads to the recognition difficulty of reticle grids and coordinate scales on images and affects the digitalization of reticle coordinate system. The article proposes an... more
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En las últimas décadas viene observándose un resurgimiento en el uso alternativo de materiales cerámicos en arquitecturas diseñadas con sensibilidad fenomenológica, lo que ha supuesto repensar su materialización y formalización, y un... more
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The overall sensitivity of frontside-illuminated, silicon single-photon avalanche diode (SPAD) arrays has often suffered from fill factor limitations. The fill factor loss can however be recovered by employing microlenses, whereby the... more
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Extreme ultraviolet (EUV) masks are expected to experience up to 6g’s of acceleration and achieve speeds as high as 500mm∕s while mounted in the exposure tool. Therefore, it is critical that the mounting technique employed to hold the... more
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The overall sensitivity of frontside-illuminated, silicon single-photon avalanche diode (SPAD) arrays has often suffered from fill factor limitations. The fill factor loss can however be recovered by employing microlenses, whereby the... more
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