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Gupta et al., 2018 - Google Patents

Analysis and modeling of current mismatch in laterally nonuniform mosfets

Gupta et al., 2018

Document ID
4032007250491232285
Author
Gupta C
Goel R
Chauhan Y
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

We present an analytical modeling approach for drain current (ID) mismatch in lateral nonuniformly doped (NUD) MOSFETs. The model uses the carrier number fluctuation theory to include the effect of random dopant fluctuations (RDFs) on inversion charge fluctuation …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/1025—Channel region of field-effect devices
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