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Zhang et al., 2018 - Google Patents

Characterization and modeling of gigarad-TID-induced drain leakage current of 28-nm bulk MOSFETs

Zhang et al., 2018

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Document ID
16223399236556458926
Author
Zhang C
Jazaeri F
Borghello G
Faccio F
Mattiazzo S
Baschirotto A
Enz C
Publication year
Publication venue
IEEE Transactions on Nuclear Science

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This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad (SiO 2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various sizes …
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