WO2024106110A1 - Wafer end surface polishing device - Google Patents
Wafer end surface polishing device Download PDFInfo
- Publication number
- WO2024106110A1 WO2024106110A1 PCT/JP2023/037590 JP2023037590W WO2024106110A1 WO 2024106110 A1 WO2024106110 A1 WO 2024106110A1 JP 2023037590 W JP2023037590 W JP 2023037590W WO 2024106110 A1 WO2024106110 A1 WO 2024106110A1
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- WIPO (PCT)
- Prior art keywords
- wafer
- roller
- polishing
- edge
- tape
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 316
- 230000007246 mechanism Effects 0.000 claims abstract description 125
- 238000007689 inspection Methods 0.000 claims abstract description 23
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- 230000007723 transport mechanism Effects 0.000 claims description 8
- 238000000926 separation method Methods 0.000 abstract description 4
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- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a wafer edge polishing device.
- wafer edge polishing devices have been used to polish the edge of a wafer to remove unwanted films and surface roughness.
- the wafer is rotated around its central axis as the axis of rotation, and a polishing tape moved in the thickness direction of the wafer is brought into sliding contact with the edge of the wafer, polishing the edge of the wafer into an arc shape (see, for example, Patent Document 1).
- conventional wafer edge polishing devices place a lower variable roller and an upper variable roller at a position that sandwiches the wafer, and transport a polishing tape stretched between the lower and upper variable rollers in the thickness direction of the wafer, with the lower and upper variable rollers each being movable in a direction approaching the wafer's edge.
- the wafer edge polishing device by individually bringing the lower and upper variable rollers closer to the wafer, the inclination angle of the polishing tape relative to the wafer's edge can be freely changed, and the wafer's edge can be polished to an optimal shape.
- conventional wafer edge polishing devices polish the entire edge of the wafer from the upper corner to the lower corner by changing the position of the lower variable roller and upper variable roller that sandwich the wafer in the thickness direction and changing the inclination angle of the polishing tape relative to the wafer edge, so that the lower variable roller and upper variable roller must be provided in a position to sandwich the wafer so that the entire edge of the wafer is positioned between the lower variable roller and upper variable roller on which the polishing tape is stretched.
- the gap between the lower variable roller and upper variable roller on which the polishing tape is stretched must be greater than or equal to the wafer thickness, and the entire edge of the wafer must be sandwiched between the lower variable roller and upper variable roller in the wafer thickness direction, which poses the problem of a larger gap between the lower variable roller and upper variable roller in the wafer thickness direction.
- This invention was made against the background of the above circumstances, and aims to provide a wafer edge polishing device that can form the edge of the wafer into an appropriate shape even if the gap between the first roller and the second roller in the thickness direction of the wafer is made smaller than in the past.
- the wafer edge polishing apparatus comprises a wafer rotation mechanism that supports a wafer and rotates the wafer in a circumferential direction around the central axis of the wafer as a rotation axis, a wafer lifting mechanism that raises and lowers the wafer supported by the wafer rotation mechanism in the central axis direction, a first roller arranged radially outward of the wafer supported by the wafer rotation mechanism, a second roller arranged radially outward of the wafer supported by the wafer rotation mechanism and opposed to the first roller in the thickness direction of the wafer, and a polishing tape wound around the first roller and the second roller is stretched between the first roller and the second roller, and the polishing tape is moved between the first roller and the second roller.
- the system includes a tape transport mechanism that transports the tape, and a roller movement mechanism that moves each of the first roller and the second roller independently in a direction toward and away from the edge surface of the wafer, and moves the polishing tape in a direction toward and away from the edge surface of the wafer.
- the roller movement mechanism moves both or either of the first roller and the second roller in a direction toward the edge surface of the wafer supported by the wafer rotation mechanism, and polishes the edge surface of the wafer with the polishing tape being transported between the first roller and the second roller.
- the wafer lift mechanism lifts and lowers the wafer, thereby changing the position of the edge surface of the wafer that the polishing tape contacts in the thickness direction of the wafer.
- the first roller and the second roller each move independently in a direction approaching the wafer edge surface, and the inclination angle of the polishing tape can be changed.
- the wafer can be moved in the direction of the central axis by the wafer lifting mechanism. This means that the position where the polishing tape contacts the wafer edge surface can be changed by adjusting the inclination angle of the polishing tape, and the position where the polishing tape contacts the wafer edge surface can also be changed by changing the height position of the wafer edge surface along the central axis. Therefore, even if the entire wafer edge surface is not necessarily positioned between the first roller and the second roller that transport the polishing tape, the entire wafer edge surface can be polished by appropriately changing the height position of the wafer edge surface. Therefore, even if the gap between the first roller and the second roller in the wafer thickness direction is made smaller than before, the wafer edge surface can be formed into an appropriate shape.
- FIG. 1 is a plan view showing a configuration of a wafer processing system having a wafer end surface polishing apparatus according to the present invention.
- FIG. 2 is a side view showing the configuration of the wafer end surface polishing apparatus. 2 is a side view showing the configuration of a roller group, a roller moving mechanism, and a tape transfer mechanism.
- FIG. FIG. 4 is a perspective view showing a configuration of a main part of a roller moving mechanism.
- FIG. 4 is an enlarged side view of a main portion showing the configuration of a first roller and a second roller.
- FIG. 11 is a side view showing the second sanding operation.
- FIG. 11 is an enlarged side view of a main part showing a state of a second sanding operation.
- FIG. 11 is a side view showing a state of a third sanding operation.
- FIG. 11 is an enlarged side view of a main part showing a state of a third sanding operation.
- 1 is a side view showing the configuration of a wafer edge polishing apparatus provided with a plate-shaped back pad.
- 1 is a schematic diagram showing the configuration of a wafer end surface polishing apparatus equipped with a tape switching mechanism for switching between two types of polishing tapes having different roughnesses.
- 13 is a side view for explaining the configuration of a base plate and a base plate support part of a wafer end surface polishing apparatus according to another embodiment.
- FIG. 11 is a side view showing a state of a third sanding operation.
- FIG. 11 is an enlarged side view of a main part showing a state of a third sanding operation.
- 1 is a side view showing the configuration of a wafer edge polishing apparatus provided with a plate-shaped back pad.
- 1 is
- FIG. 13 is a side view for explaining the configuration of a base plate and a base plate support part of a wafer end surface polishing apparatus according to another embodiment.
- FIG. FIG. 11 is a side view showing a state of a second sanding operation in another embodiment.
- FIG. 11 is a side view showing a state of a third sanding operation in another embodiment.
- FIG. 1 is a plan view showing the configuration of a wafer processing system 10 including a wafer edge polishing device 17 according to the present invention.
- the wafer processing system 10 is equipped with four cassette stands 11, 12, 13, 14, an orientation flat/notch detection device 15, a wafer edge inspection device 16, a wafer edge polishing device 17, and a transfer machine 18.
- the four cassette stands 11-14, the orientation flat/notch detection device 15, the wafer edge inspection device 16, and the wafer edge polishing device 17 are arranged in an approximately circular shape with the transfer machine 18 at the center so as to surround the transfer machine 18.
- the four cassette stands 11-14 are stands on which wafer cassettes are placed, and are arranged in an arc shape.
- a wafer cassette stores multiple, roughly disk-shaped wafers.
- a loader/unloader unit 19 is provided near the four cassette stands 11-14 to receive and eject each of the wafer cassettes.
- the transfer machine 18 loads and unloads wafers into and from the wafer cassette, wafer edge inspection device 16, and wafer edge polishing device 17.
- the orientation flat and notch detection device 15 inspects the position of the orientation flat and notch formed on the edge of the wafer. The inspection results obtained by the orientation flat and notch detection device 15 are used as information when aligning the orientation flat and notch when storing the wafer in the wafer cassette, and when positioning the orientation flat and notch in the wafer edge inspection device 16 and wafer edge polishing device 17.
- the wafer edge inspection device 16 inspects the shape of the wafer edge and outputs the inspection results to the wafer edge polishing device 17. Based on the inspection results received from the wafer edge inspection device 16, the wafer edge polishing device 17 polishes the wafer edge, for example, into a cross-sectional arc shape. The wafers whose edge has been polished are then cleaned. After cleaning, the wafers are dispensed into the wafer cassettes placed back on the cassette stands 11-14.
- FIG. 2 is a side view showing the configuration of the wafer edge polishing device 17.
- the wafer edge polishing device 17 includes a wafer rotation mechanism 22, a wafer lifting mechanism 23, a roller group 24, a roller movement mechanism 25, and a tape transfer mechanism 26.
- FIG. 2 shows the central axis direction in which the central axis of the wafer 27 extends as the Z direction.
- the directions in which the roller group 24 described below moves toward and away from the wafer 27 and the direction in which the polishing tape moved by the roller group 24 approaches and separates from the edge surface of the wafer 27 are the same direction and perpendicular to the Z direction, and these directions are shown as the Y direction.
- FIG. 2 shows the direction perpendicular to the Y direction and the Z direction as the X direction, and the XY plane including the X direction and the Y direction is the surface direction of the wafer 27.
- the wafer edge polishing device 17 is provided with a transfer table 30a, and the wafer 27 is loaded onto the transfer table 30a from the wafer edge inspection device 16 by the transfer machine 18 (Fig. 1).
- the wafer edge polishing device 17 is provided with a transfer holder 21 that is movable via an arm 20, and the arm 20 is moved to grip the wafer 27 loaded onto the transfer table 30a with the transfer holder 21.
- the wafer edge polishing device 17 then transports the transfer holder 21 holding the wafer 27 to the table 30 of the wafer rotation mechanism 22 by the arm 20, and loads the wafer 27 onto the table 30 in the optimal position and orientation.
- the wafer rotation mechanism 22 has a table 30 attached to the upper end of a rotating shaft 29 that is rotated by a drive motor 28, and air is drawn in from the top of the table 30 by an air intake unit (not shown).
- a wafer 27 is placed on the table 30
- the wafer rotation mechanism 22 vacuum-adsorbs the wafer 27 to the table 30 and supports the wafer 27 with the table 30.
- the wafer rotation mechanism 22 rotates the table 30 around the rotating shaft 29, and rotates the wafer 27 in a circumferential direction in a horizontal plane with the central axis of the wafer 27 as the axis of rotation while the wafer 27 is supported by the table 30.
- the wafer lifting mechanism 23 holds the wafer rotation mechanism 22 and moves the wafer 27 in the central axis direction (Z direction) via the wafer rotation mechanism 22.
- the roller group 24, roller movement mechanism 25, and tape transfer mechanism 26 are referred to as the polishing mechanism 31.
- the polishing mechanism 31 is provided on a base plate 32.
- the base plate 32 is configured to be freely movable in a direction toward or away from the edge face of the wafer 27 (Y direction), and moves the polishing mechanism 31 provided on the base plate 32 in a direction toward or away from the edge face of the wafer 27.
- FIG. 3 is a side view of the main part showing the configuration of the polishing mechanism 31.
- the roller group 24 is arranged radially outside the wafer 27, and the polishing tape 33 is stretched and transported in the thickness direction of the wafer 27.
- the tape transport mechanism 26 transports the polishing tape 33 toward the roller group 24, applies tension to the polishing tape 33 to stretch it on the roller group 24, and transports the polishing tape 33 on the roller group 24 in a stretched state.
- the polishing tape 33 is, for example, a film coated with ultrafine abrasive particles uniformly dispersed in a resin adhesive, and polishes the end surface 27a to a set roughness according to the grain size of the abrasive.
- the dashed line O shown in FIG. 3 is a reference line indicating the reference in the height direction (Z direction) of the roller group 24.
- the tape transfer mechanism 26 includes a tape feed reel 34, a tape take-up reel 35, tension rollers 36, 37, motor rollers 38, 39, and pressure rollers 40, 41, and the tape feed reel 34, tape take-up reel 35, tension rollers 36, 37, motor rollers 38, 39, and pressure rollers 40, 41 are mounted on a base plate 32.
- the tension roller 36, motor roller 38, and pressure roller 40 are disposed on the feed side that transports the polishing tape 33 from the tape feed reel 34 to the roller group 24.
- the tension roller 37, motor roller 39, and pressure roller 41 are disposed on the take-up side that transports the polishing tape 33 from the roller group 24 to the tape take-up reel 35.
- the polishing tape 33 pulled out from the tape feed reel 34 is bent at the outer peripheral surface of the tension roller 36, guided between the motor roller 38 and the pressure roller 40, sandwiched between the motor roller 38 and the pressure roller 40, and then sent out from between the motor roller 38 and the pressure roller 40, bent at the outer peripheral surface of the motor roller 38 toward the roller group 24, and transported to the roller group 24.
- the polishing tape 33 transported to the roller group 24 is sent out from the roller group 24 toward the motor roller 39, guided along the outer peripheral surface of the motor roller 39 between the motor roller 39 and the pressure roller 41, sandwiched between the motor roller 39 and the pressure roller 41, sent out from between the motor roller 39 and the pressure roller 41 toward the tension roller 37, bent at the outer peripheral surface of the tension roller 37 toward the tape take-up reel 35, and taken up by the tape take-up reel 35.
- the tape transfer mechanism 26 transfers the polishing tape 33 to the first roller 43 and the second roller 44 that constitute the roller group 24, and the polishing tape 33 wound around the first roller 43 and the second roller 44 is stretched between the first roller 43 and the second roller 44, and continues to transfer the polishing tape 33 between the first roller 43 and the second roller 44.
- the tape transfer mechanism 26 drives the motor rollers 38, 39 to rotate the motor rollers 38, 39, thereby guiding the polishing tape 33 sent out from the tape feed reel 34 along the above-mentioned transport path to the first roller 43, winding the polishing tape 33 around the outer periphery of the first roller 43, changing the transport direction of the polishing tape 33 and extending it toward the second roller 44, and winding the polishing tape 33 around the outer periphery of the second roller 44, changing the transport direction of the polishing tape 33, and continues to transport the polishing tape 33 toward the tape take-up reel 35.
- the roller moving mechanism 25 is provided on the base plate 32, and moves together with the base plate 32 toward or away from the end surface 27a of the wafer 27 as the base plate 32 moves toward or away from the end surface 27a of the wafer 27 (Y direction).
- FIG. 4 is a perspective view showing the configuration of the main parts of the roller moving mechanism 25.
- the roller moving mechanism 25 is provided with a first roller 43 and a second roller 44 as the roller group 24, and is configured to move each of the first roller 43 and the second roller 44 independently toward or away from the end surface 27a of the wafer 27 (Y direction) separately from the movement in the Y direction by the base plate 32.
- the first roller 43 and the second roller 44 are arranged facing each other at a predetermined distance in the thickness direction (Z direction) of the wafer 27 perpendicular to the rotation plane of the wafer 27 on the XY plane.
- the first roller 43 is arranged radially outward of the wafer 27 supported by the wafer rotation mechanism 22, and is arranged above the second roller 44.
- the first roller 43 is supported by the upper moving plate 45 via upper connecting plates 45a and 45b.
- the upper moving plate 45 is provided so as to be movable in the Y direction (horizontal direction) relative to the base plate 32 (see FIG. 3). As the upper moving plate 45 moves in the Y direction, the first roller 43 moves in a direction approaching and away from the end surface 27a of the wafer 27 (Y direction) in conjunction with the movement of the upper moving plate 45.
- the upper connecting plates 45a, 45b on which the first roller 43 is provided are plate-shaped members with their longitudinal direction in the Y direction, and a rod-shaped cross section 45c is hung between the upper connecting plates 45a, 45b, which are arranged opposite each other at a predetermined distance.
- the first roller 43 is hung between the upper connecting plates 45a, 45b which are arranged opposite each other at a predetermined distance, and each end is rotatably provided at the tip side of the upper connecting plates 45a, 45b.
- the second roller 44 is disposed radially outward of the wafer 27 supported by the wafer rotation mechanism 22, and disposed below the first roller 43.
- the second roller 44 is supported by the lower moving plate 46 via lower connecting plates 46a and 46b.
- the lower moving plate 46 is provided so as to be movable in the Y direction relative to the base plate 32. As the lower moving plate 46 moves in the Y direction, the second roller 44 moves in a direction toward and away from the end surface 27a of the wafer 27 (Y direction) in conjunction with the movement of the lower moving plate 46.
- the lower connecting plates 46a, 46b on which the second roller 44 is provided are plate-shaped members with their longitudinal direction in the Y direction, and a rod-shaped cross section 46c is hung between the lower connecting plates 46a, 46b, which are arranged opposite each other at a predetermined distance by the cross section 46c.
- the second roller 44 is hung between the lower connecting plates 46a, 46b which are arranged opposite each other at a predetermined distance, and each end is rotatably provided at the tip side of the lower connecting plates 46a, 46b.
- the upper moving plate 45 and the lower moving plate 46 are connected to the upper connecting plate 45a and the lower connecting plate 46a at their tip ends, respectively, and are connected to the rotating plate 47 via the annular part 49 at their base ends.
- the rotating plate 47 has a drive plate 48 and annular part 49 fixed to the rotation center 47a.
- the annular part 49 is formed in an elliptical shape with its longitudinal direction in the Z direction, and its center is fixed to the rotation center 47a of the rotating plate 47.
- the annular part 49 has an upper long hole 51 above the rotation center 47a, and a circular upper cam 52 provided at the base of the upper moving plate 45 is rotatably engaged with the upper long hole 51.
- the annular part 49 also has a lower long hole 53 below the rotation center 47a, and a circular lower cam 54 provided at the base of the lower moving plate 46 is rotatably engaged with the lower long hole 53.
- the driving plate 48 has an arc-shaped plate portion 48a and a long plate portion 48b that extends linearly from the center of the inner diameter side of the arc-shaped plate portion 48a toward the radial direction, and has a configuration in which an upper step portion 48c and a lower step portion 48d are formed at the connecting point of the arc-shaped plate portion 48a and the long plate portion 48b.
- the driving plate 48 has the tip side of the long plate portion 48b fixed to the rotation center 47a of the rotating plate 47, the arc-shaped plate portion 48a is connected to the driving unit 50, and the driving force from the driving unit 50 is applied to the arc-shaped plate portion 48a.
- the driving plate 48 has an upper long hole 51 of the annular portion 49 arranged above the long plate portion 48b, and a lower long hole 53 of the annular portion 49 arranged below the long plate portion 48b, and the long plate portion 48b is arranged between the upper moving plate 45 and the lower moving plate 46.
- the driving force from the drive unit 50 pushes the arc-shaped plate portion 48a upward around the rotation center 47a as the axis of rotation of the drive plate 48, causing the long plate portion 48b and the annular portion 49 to rotate counterclockwise around the rotation center 47a of the rotating plate 47.
- the driving force from the drive unit 50 pushes the arc-shaped plate portion 48a downward around the rotation center 47a as the axis of rotation of the drive plate 48, causing the long plate portion 48b and the annular portion 49 to rotate clockwise around the rotation center 47a of the rotating plate 47.
- the state in which the longitudinal direction of the long plate portion 48b of the drive plate 48 coincides with the reference line O that passes through the rotation center 47a and extends in the Y direction is taken as the reference position of the drive plate 48, and below, the configuration when the drive plate 48 is in the reference position will be described.
- the longitudinal direction of the annular portion 49 extends in the Z direction perpendicular to the Y direction, and the upper long hole 51 of the annular portion 49 is positioned above the rotation center 47a, while the lower long hole 53 of the annular portion 49 is positioned below the rotation center 47a.
- the upper cam 52 engaged with the upper long hole 51 of the annular portion 49 and the lower cam 54 engaged with the lower long hole 53 of the annular portion 49 are positioned in a straight line with the rotation center 47a in the Z direction.
- the first roller 43 and the second roller 44 are arranged in a straight line facing each other in the Z direction, and the distances in the Y direction to the edge surface 27a of the wafer 27 are the same. Also, when the driving plate 48 is in the reference position, the distance in the Z direction (thickness direction of the wafer 27) from the outer circumferential surface of the first roller 43 on which the polishing tape 33 is stretched to the outer circumferential surface of the second roller 44 is selected to be smaller than the thickness of the wafer 27. In other words, the entire edge surface of the wafer 27 cannot be placed in the gap between the first roller 43 and the second roller 44, which are moved with the polishing tape 33 stretched, and the first roller 43 and the second roller 44 cannot pinch the wafer 27 in the thickness direction.
- a back pad 55 is provided to support the polishing tape 33 transported between the first roller 43 and the second roller 44.
- the back pad 55 is made of metal or resin and has four faces with a roughly rectangular cross section, with the polishing tape 33 contacting the surface portion 55b of one of the four faces.
- the back pad 55 provided between the first roller 43 and the second roller 44 is positioned on a reference line O that indicates the reference in the height direction (Z direction) of the roller group 24.
- the rear pad 55 presses the polishing tape 33 transported between the first roller 43 and the second roller 44 against the edge surface 27a of the wafer 27 with the surface portion 55b, applying a surface pressure to the edge surface 27a of the wafer 27.
- the rear pad 55 can use any of its four surfaces as the surface portion 55b. For example, after a predetermined period of time has elapsed, the rear pad 55 can be rotated approximately 90 degrees around the axis 55a of the rear pad 55, and a surface other than the surface that was in contact with the polishing tape 33 can be used as the surface portion 55b.
- the first roller 43 and the second roller 44 are connected to elliptical annular linking parts 56a, 56b having a long hole 57.
- the linking parts 56a, 56b are arranged opposite each other in the X direction, and when the drive plate 48 is in the reference position, the longitudinal direction of the long hole 57 is arranged along the Z direction.
- the long holes 57 of the linking parts 56a, 56b in this embodiment are selected to have a length slightly greater than the thickness of the wafer 27.
- the linking part 56a is positioned by inserting one end of the first roller 43, the second roller 44, and the back pad 55 into the long hole 57, and fitting the frame of the long hole 57 into grooves formed on the outer circumferential surfaces of one end of the first roller 43, the second roller 44, and the back pad 55.
- the linking portion 56b is positioned by inserting the other ends of the first roller 43, the second roller 44, and the back pad 55 into the long hole 57, and fitting the frame of the long hole 57 into the grooves formed on the outer circumferential surfaces of the other ends of the first roller 43, the second roller 44, and the back pad 55.
- the first roller 43, the second roller 44, and the back pad 55 are rotatably arranged within the long hole 57, the back pad 55 is positioned in the middle of the long hole 57, and the first roller 43 and the second roller 44 are arranged to be movable along the longitudinal direction within the long hole 57.
- the linking parts 56a and 56b guide the first roller 43 and the second roller 44 along the long hole 57, and the long hole 57 regulates the amount of movement of the first roller 43 and the second roller 44 in the Y direction.
- the transfer machine 18 unloads one wafer 27 from one of the four cassette placement tables 11-14 and loads the wafer 27 into the wafer edge surface inspection device 16.
- the shape of the edge surface 27a of the wafer 27 loaded into the wafer edge surface inspection device 16 is inspected by the wafer edge surface inspection device 16. Data on the inspected edge surface shape is sent to the wafer edge surface polishing device 17. Then, after inspection by the wafer edge surface inspection device 16, the wafer 27 is unloaded from the wafer edge surface inspection device 16 by the transfer machine 18 and loaded into the wafer edge surface polishing device 17.
- the wafer edge polishing device 17 acquires data on the shape of the edge 27a of the wafer 27 inspected by the wafer edge inspection device 16, and based on that data, determines the height position of the wafer 27 during polishing to form the edge 27a of the wafer 27 into an optimal shape, as well as the contact and separation state of the first roller 43 and the second roller 44.
- the optimal shape of the edge 27a of the wafer 27 is, for example, an R-shape that finishes the edge 27a of the wafer 27 into an arc shape that is symmetrical in the thickness direction of the wafer 27.
- the optimal shape of the edge 27a of the wafer 27 is not limited to an R-shape, and may be an asymmetric shape that is not symmetrical in the thickness direction.
- the contact and separation state of the first roller 43 and the second roller 44 can be divided into at least three types: a first polishing operation, a second polishing operation, and a third polishing operation.
- the first polishing operation as shown in FIG. 5, the driving plate 48 is set to the reference position, and the first roller 43 and the second roller 44 are arranged in a straight line in the Z direction with the first roller 43 and the second roller 44 in close proximity to the back pad 55, and the polishing tape 33 is continuously transported while stretched along the Z direction.
- the base plate 32 moves in this state in a direction approaching the end surface 27a of the wafer 27, thereby moving the first roller 43 and the second roller 44 together with the base plate 32 in a direction approaching the end surface 27a of the wafer 27.
- the polishing tape 33 transported between the first roller 43 and the second roller 44 is pressed against the end surface 27a of the wafer 27, and the end surface 27a of the wafer 27 can be polished vertically along the Z direction.
- the upper sides of the linking portions 56a, 56b are tilted toward the wafer 27 with the back pad 55 at the center.
- the first roller 43 moves in a direction away from the back pad 55 along the long holes 57 of the linking portions 56a, 56b, thereby moving the first roller 43 in a direction approaching the edge surface 27a of the wafer 27, and the second roller 44 moves in a direction away from the back pad 55 along the long holes 57 of the linking portions 56a, 56b, thereby moving the second roller 44 in a direction away from the edge surface 27a of the wafer 27.
- the distance between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 during the second polishing operation is the same as the distance between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 during the first polishing operation, so the gap between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 can be kept narrow without widening.
- the polishing tape 33 which is continuously transported while stretched between the first roller 43 and the second roller 44, is inclined from top to bottom so as to gradually move away from the edge surface 27a of the wafer 27.
- the base plate 32 moves in a direction approaching the edge surface 27a of the wafer 27 while remaining in this state, thereby moving the first roller 43 and the second roller 44 together with the base plate 32 in a direction approaching the edge surface 27a of the wafer 27.
- the polishing tape 33 which is continuously transported while inclined between the first roller 43 and the second roller 44, can be pressed against the periphery of the upper corner of the edge surface 27a of the rotating wafer 27, thereby polishing the periphery of the upper corner of the edge surface 27a of the wafer 27.
- the lower sides of the linking portions 56a, 56b are tilted toward the wafer 27 with the back pad 55 at the center.
- the second roller 44 moves in a direction away from the back pad 55 along the long holes 57 of the linking portions 56a, 56b, thereby moving the second roller 44 in a direction approaching the edge surface 27a of the wafer 27, and the first roller 43 moves in a direction away from the back pad 55 along the long holes 57 of the linking portions 56a, 56b, thereby moving the first roller 43 in a direction away from the edge surface 27a of the wafer 27.
- the distance between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 during the third polishing operation is the same as the distance between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 during the first polishing operation, so the gap between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 can be kept narrow without widening.
- the polishing tape 33 which is continuously transported while stretched between the first roller 43 and the second roller 44, is inclined from the bottom to the top so as to gradually move away from the edge surface 27a of the wafer 27.
- the base plate 32 moves in a direction approaching the edge surface 27a of the wafer 27 while remaining in this state, thereby moving the first roller 43 and the second roller 44 together with the base plate 32 in a direction approaching the edge surface 27a of the wafer 27.
- the polishing tape 33 which is continuously transported while inclined between the first roller 43 and the second roller 44, can be pressed against the periphery of the lower corner of the edge surface 27a of the wafer 27, and the periphery of the lower corner of the edge surface 27a of the wafer 27 can be polished.
- the wafer edge polishing device 17 when performing the first polishing operation, the second polishing operation, and the third polishing operation, is configured to appropriately move the wafer 27 in the central axis direction (Z direction) via the wafer rotation mechanism 22 by the wafer lifting mechanism 23, thereby making it possible to adjust the position where the edge surface 27a of the wafer 27 rubs against the polishing tape 33.
- the order of the polishing operations is determined according to the shape of the end surface 27a of the wafer 27.
- the order of the polishing operations may be, for example, the first polishing operation, the second polishing operation, and the third polishing operation.
- the order of the polishing operations is not limited to the above-mentioned order, and for example, the second polishing operation and the third polishing operation may be reversed.
- the wafer 27 is rotated appropriately in the circumferential direction by the wafer rotation mechanism 22, and the polishing tape 33 transported between the first roller 43 and the second roller 44 polishes the end surface 27a of the wafer 27 with the polishing tape 33 while changing the circumferential position at which the polishing tape 33 slides against the end surface 27a of the wafer 27.
- the wafer edge polishing device 17 based on the inspection results of the shape of the edge 27a of the wafer 27 obtained by the wafer edge inspection device 16, not only the inclination angle of the polishing tape 33 for each wafer 27 but also the height position of the wafer 27 is determined, and the first polishing operation, the second polishing operation, and/or the third polishing operation described above is started.
- the wafer 27 is moved in the central axis direction (Z direction) by the wafer lifting mechanism 23 so that the intermediate position 27b of the thickness of the wafer 27 is at the same height as the reference line O passing through the back pad 55 provided at the intermediate position between the first roller 43 and the second roller 44.
- the drive plate 48 is set to the reference position and the first roller 43 and the second roller 44 are arranged in a straight line in the Z direction, and the base plate 32 is moved in a direction approaching the end surface 27a of the wafer 27.
- the polishing tape 33 being transferred perpendicularly to the first roller 43 and the second roller 44 is pressed against the end surface 27a of the wafer 27 supported by the wafer rotating mechanism 22, and the end surface 27a of the wafer 27 can be polished so that its shape is a vertical surface along the Z direction.
- the wafer 27 is lowered in the central axis direction (Z direction) by the wafer lifting mechanism 23 so that the intermediate position 27b of the thickness of the wafer 27 is at a height position below the reference line O passing through the back pad 55.
- the drive plate 48 is rotated counterclockwise to rotate the rotating plate 47 and the annular portion 49 counterclockwise.
- the upper cam 52 of the upper moving plate 45 provided in the upper long hole 51 of the annular portion 49 is pushed in a direction approaching the end surface 27a of the wafer 27 in conjunction with the annular portion 49 rotating counterclockwise.
- the first roller 43 provided on the tip side of the upper moving plate 45 moves in a direction approaching the end surface 27a of the wafer 27 in conjunction with the upper moving plate 45.
- the lower cam 54 provided in the lower long hole 53 of the annular portion 49 is pulled in a direction away from the end surface 27a of the wafer 27 in conjunction with the annular portion 49 rotating counterclockwise.
- the second roller 44 provided on the tip side of the lower moving plate 46 moves in a direction away from the end surface 27a of the wafer 27 in conjunction with the lower moving plate 46.
- the polishing tape 33 which is stretched between the first roller 43 and the second roller 44 and continuously transported, is inclined so that the upper side approaches the edge surface 27a of the wafer 27 and the lower side moves away from it.
- the back pad 55 which is fixed to the center of rotation of the linking parts 56a, 56b that have rotated counterclockwise, rotates counterclockwise around the axis 55a together with the linking parts 56a, 56b in accordance with the inclination of the polishing tape 33, and maintains a state in which the surface part 55b is pressed against the surface of the polishing tape 33.
- the back pad 55 receives the load applied to the polishing tape 33 from the edge surface 27a of the wafer 27 when the polishing tape 33 is pressed against the edge surface 27a of the wafer 27.
- the intermediate position 27b of the thickness of the wafer 27 is set at a height position below the reference line O passing through the back pad 55, and the polishing tape 33, which is continuously transported between the first roller 43 and the second roller 44, is tilted so that the upper side approaches the end surface 27a of the wafer 27 and the lower side moves away from it, and the base plate 32 is moved in a direction approaching the end surface 27a of the wafer 27.
- the polishing tape 33 which is continuously transported while tilted between the first roller 43 and the second roller 44, can be pressed against the upper corner of the end surface 27a of the wafer 27 supported by the wafer rotation mechanism 22, and the shape of the upper corner of the end surface of the wafer 27 can be polished to a curved R shape.
- the wafer 27 is raised in the central axis direction (Z direction) by the wafer lifting mechanism 23 so that the intermediate position 27b of the thickness of the wafer 27 is at a height position above the reference line O passing through the back pad 55.
- the drive plate 48 is rotated clockwise to rotate the rotating plate 47 and the annular portion 49 clockwise.
- the upper moving plate 45 moves in a direction away from the end surface 27a of the wafer 27 in conjunction with the annular portion 49 rotating clockwise, with the upper cam 52 provided in the upper long hole 51 of the annular portion 49.
- the lower moving plate 46 moves in a direction approaching the end surface 27a of the wafer 27 in conjunction with the annular portion 49 rotating clockwise, with the lower cam 54 provided in the lower long hole 53 of the annular portion 49.
- the second roller 44 which is provided at the tip side of the lower moving plate 46, moves in conjunction with the lower moving plate 46 in a direction approaching the edge surface 27a of the wafer 27.
- the polishing tape 33 which is stretched between the first roller 43 and the second roller 44 and continuously transported, is inclined so that the lower side approaches the edge surface 27a of the wafer 27 and the upper side moves away from it.
- the back pad 55 which is fixed to the center of rotation of the linking parts 56a, 56b that rotate clockwise, rotates around the axis 55a together with the linking parts 56a, 56b in accordance with the inclination of the polishing tape 33, and maintains a state in which the surface part 55b is pressed against the surface of the polishing tape 33.
- the back pad 55 receives the load applied to the polishing tape 33 from the edge surface 27a of the wafer 27 when the polishing tape 33 is pressed against the edge surface 27a of the wafer 27.
- the intermediate position 27b of the thickness of the wafer 27 is set at a height position above the reference line O passing through the back pad 55, and the polishing tape 33 being continuously transported between the first roller 43 and the second roller 44 is tilted so that the lower side approaches the end face 27a of the wafer 27 and the upper side moves away from it, and the base plate 32 is moved in a direction approaching the end face 27a of the wafer 27.
- the polishing tape 33 being continuously transported in an inclined state between the first roller 43 and the second roller 44 can be pressed against the lower corner of the end face 27a of the wafer 27 supported by the wafer rotation mechanism 22, and the shape of the lower corner of the end face of the wafer 27 can be polished to a curved R shape.
- the wafer edge polishing device 17 supports the wafer 27 with the wafer rotation mechanism 22, and uses the roller movement mechanism 25 to move both or either of the first roller 43 and the second roller 44 in a direction approaching the edge surface 27a of the wafer 27 supported by the wafer rotation mechanism 22, and polishes the edge surface 27a of the wafer 27 with the polishing tape 33 that is continuously transported between the first roller 43 and the second roller 44.
- the wafer edge polishing device 17 uses the wafer lifting mechanism 23 to raise and lower the wafer 27 supported by the wafer rotation mechanism 22 in the central axis direction, thereby changing the position of the edge surface 27a of the wafer 27 that contacts the polishing tape 33 in the thickness direction of the wafer 27.
- the first roller 43 and the second roller 44 each move independently in a direction approaching the edge face 27a of the wafer 27, thereby changing the inclination angle of the polishing tape 33.
- the wafer 27 can be moved in the central axis direction by the wafer lifting mechanism 23. Therefore, by adjusting the inclination angle of the polishing tape 33, the position at which the polishing tape 33 contacts the edge face 27a of the wafer 27 can be changed, and the position at which the polishing tape 33 contacts the edge face 27a of the wafer 27 can also be changed by changing the height position of the edge face 27a of the wafer 27 along the central axis direction.
- the entire end surface of the wafer 27 can be polished by appropriately changing the height position of the end surface 27a of the wafer 27. Therefore, even if the gap between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 is made smaller than before, the end surface 27a of the wafer 27 can be formed into an appropriate shape.
- the first polishing operation is performed by moving the wafer 27 in the central axis direction (Z direction) using the wafer lifting mechanism 23 so that the intermediate position 27b of the thickness of the wafer 27 is at the same height as the reference line O passing through the back pad 55 provided at the intermediate position between the first roller 43 and the second roller 44, and the end surface 27a of the wafer 27 is polished with the polishing tape 33 stretched in the thickness direction of the wafer 27.
- the first polishing operation may be performed by using the wafer lifting mechanism 23 to move the intermediate position 27b of the thickness of the wafer 27 to a height position below the reference line O passing through the back pad 55 as shown in FIG.
- the present invention is not limited to this.
- the height position of the wafer 27 and the inclination angle of the polishing tape 33 may be continuously changed so as to gradually switch between each state, such as from the first polishing operation state to the second polishing operation state, from the second polishing operation state to the first polishing operation state, from the first polishing operation state to the third polishing operation state, and from the third polishing operation state to the first polishing operation state, while keeping the polishing tape 33 in sliding contact with the end surface 27a of the wafer 27.
- the back pad 55 is not limited to one having a rectangular cross section, and for example, a plate-shaped back pad 58 may be used as shown in FIG. 10. As shown in FIG. 10, a plate-shaped back pad 58 is provided between the first roller 43 and the second roller 44.
- the roller movement mechanism 25 shown in FIG. 10 includes a pair of the first roller 43 and the second roller 44, a pair of the first roller 43a and the second roller 44a, and annular portions 59, 59a.
- the annular portion 59 is an elliptical ring having a longitudinal direction, and the first roller 43 and the second roller 44 are provided at both ends in the longitudinal direction.
- the annular portion 59 has a rotation axis 60 at its longitudinal center, and is supported by the base plate 32 (FIG. 3) so as to be rotatable clockwise or counterclockwise around the rotation axis 60 in the YZ plane including the Y and Z directions.
- the annular portion 59a is also an elliptical ring having a longitudinal direction, like the annular portion 59, and the first roller 43a and the second roller 44a are provided at both ends in the longitudinal direction.
- the annular portion 59a has a rotation axis 60a at its longitudinal center, and is supported by the base plate 32 (FIG. 3) so as to be rotatable clockwise or counterclockwise around the rotation axis 60a in the YZ plane including the Y and Z directions.
- the annular parts 59, 59a are rotated counterclockwise or clockwise around the rotation shafts 60, 60a by a drive unit (not shown), which moves the first rollers 43, 43a and the second rollers 44, 44a independently toward or away from the end face 27a of the wafer 27. Specifically, when the annular parts 59, 59a rotate counterclockwise around the rotation shafts 60, 60a, the first rollers 43, 43a move toward the end face 27a of the wafer 27, and the second rollers 44, 44a move away from the end face 27a of the wafer 27.
- the polishing tape 33 which is stretched between the first roller 43 and the second roller 44 and is continuously transported, can be arranged vertically along the Z direction or tilted at a predetermined tilt angle.
- the back pad 58 tilts in the same manner in conjunction with the tilt of the annular portion 59, and supports the polishing tape 33 behind the polishing tape 33.
- the wafer edge polishing device 17 is described as using one type of polishing tape 33 to polish the edge surface 27a of the wafer 27, but the present invention is not limited to this.
- a wafer edge polishing device 62 may be applied that polishes the edge surface 27a of the wafer 27 by appropriately switching between multiple types of polishing tapes with different roughness, such as two or three types with different roughness.
- the wafer edge polishing device 62 is equipped with a tape switching mechanism 65 that switches between two types of polishing tape with different roughness: a first polishing tape 63 and a second polishing tape 64.
- the first polishing tape 63 has a predetermined grain size of abrasive
- the second polishing tape 64 has a different grain size of abrasive from that of the first polishing tape 63, for example, using an abrasive with a finer grain size than that of the first polishing tape 63.
- the wafer edge polishing device 62 also includes a first roller group 66, a second roller group 67 arranged next to the first roller group 66, a first tape transfer mechanism 68, and a second tape transfer mechanism 69.
- the device also includes a wafer rotation mechanism 22, a wafer lifting mechanism 23, and a roller movement mechanism 25, as in the above-mentioned embodiment.
- the first roller group 66 has a first roller 66a and a second roller 66b arranged opposite each other in the thickness direction (Z direction) of the wafer 27, and the first polishing tape 63 transferred from the first tape transfer mechanism 68 is continuously transferred in a state in which it is stretched between the first roller 66a and the second roller 66b.
- the second roller group 67 has a third roller 67a and a fourth roller 67b arranged opposite each other in the thickness direction (Z direction) of the wafer 27, and the second polishing tape 64 transferred from the second tape transfer mechanism 69 is continuously transferred in a state in which it is stretched between the third roller 67a and the fourth roller 67b.
- the first polishing tape 63 and the second polishing tape 64 are arranged side by side in the direction of the rotation axis of the first roller 66a, the second roller 66b, the third roller 67a, and the fourth roller 67b.
- the tape switching mechanism 65 is configured to be able to move the base plate 32 (FIG. 3), on which the first roller group 66 and first tape transport mechanism 68, and the second roller group 67 and second tape transport mechanism 69 are provided, in the tangential direction (X direction) of the end surface 27a of the wafer 27 on the XY plane.
- the tape switching mechanism 65 positions either the first roller group 66 or the second roller group 67 to face the end surface 27a of the wafer 27 by relatively moving the base plate 32 in the tangential direction (X direction) of the end surface 27a of the wafer 27, and switches the polishing tape that is in sliding contact with the end surface 27a of the wafer 27 to either the first polishing tape 63 or the second polishing tape 64.
- the operation of the first roller group 66 and the second roller group 67 when polishing the end surface 27a of the wafer 27, the adjustment of the inclination angle of the first polishing tape 63 and the second polishing tape 64, and the lifting and lowering operation of the wafer 27 by the wafer lifting mechanism 23 during the polishing operation are the same as those in the above-mentioned embodiment, so a description thereof will be omitted here.
- the tape switching mechanism 65 may be configured to move the wafer 27 rotated by the wafer rotation mechanism 22 in the tangential direction without moving the base plate 32.
- roller movement mechanism 25 is not limited to the configuration described in FIG. 3, but may have a well-known configuration.
- back pads 55, 58 are not limited to being made of metal or resin, but may be made of well-known materials such as carbon, non-ferrous metals, and wood.
- a heat sink heat dissipation fins, heat dissipation sheet, or other heat dissipation member for dissipating heat may be provided on the back surface opposite the pad side that contacts the polishing tape 33.
- the heat sink has multiple fins and absorbs heat and dissipates it into the air. It is preferable to use copper or aluminum as the heat sink because of their good thermal conductivity.
- the first roller 43a and the second roller 44a are moved toward and away from the end surface 27a of the wafer 27 simply by moving the base plate 32 toward or away from the end surface 27a of the wafer 27 (Y direction).
- the present invention is not limited to this.
- the base plate 32 having a load sensor 76 such as a load sensor may be attached to the base plate support portion 32a via a linear guide (not shown), and the base plate support portion 32a and the base plate 32 may be moved toward or away from the end surface 27a of the wafer 27 (Y direction) to move the first roller 43a and the second roller 44a toward and away from the end surface 27a of the wafer 27.
- the upper moving plate 45 and the lower moving plate 46 there is a long plate-like or long rod-like sensor support part 75 running in parallel in the longitudinal direction of the upper moving plate 45 and the lower moving plate 46.
- elliptical ring-shaped linking parts 56a, 56b having long holes 57 arranged opposite to each other in the X direction are provided, and the tip of the sensor support part 75 is rotatably provided at the center of the linking parts 56a, 56b.
- the load sensor 76 detects the load acting on the polishing tape 33 from the wafer 27 when the polishing tape 33 stretched between the first roller 43a and the second roller 44a is brought into contact with the end surface 27a of the wafer 27.
- the linear guide provided on the base plate 32 can move the base plate 32 in the direction Y2 away from the wafer 27 based on the detection result of the load sensor 76, and adjust the contact force of the polishing tape 33 against the wafer 27.
- first link roller 71 is provided at the tip of the upper moving plate 45
- second link roller 72 is provided at the tip of the lower moving plate 46
- first link roller 71 and the second link roller 72 are hung between the long holes 57 of the link parts 56a and 56b arranged opposite to each other in the X direction.
- a first roller 43a is hung at the upper end and a second roller 44a is hung at the lower end.
- the polishing tape 33 is hung between the first roller 43a and the second roller 44a rotatably provided at the ends of the link parts 56a and 56b, and the polishing tape 33 is supported by a back pad 55 provided between the first roller 43a and the second roller 44a.
- the first roller 43a and the second roller 44a are not provided on the upper moving plate 45 and the lower moving plate 46, but by moving the upper moving plate 45 and the lower moving plate 46 in a direction toward or away from the edge surface 27a of the wafer 27, as in the above-mentioned embodiment, the first roller 43a and the second roller 44a can be moved independently in a direction toward or away from the edge surface 27a of the wafer 27. This allows the polishing tape 33, which is stretched between the first roller 43a and the second roller 44a and is continuously transported, to be tilted, etc.
- the base plate support portion 32a and the base plate 32 provided on the base plate support portion 32a via a linear guide are moved in a direction Y1 approaching the edge surface 27a of the wafer 27.
- the wafer edge polishing device brings the polishing tape 33, which is continuously transported by the first roller 43a and the second roller 44a, into contact with the edge surface 27a of the wafer 27 supported by the wafer rotation mechanism 22.
- the wafer edge polishing device can detect the load that the polishing tape 33 receives from the wafer 27 by the load sensor 76.
- the wafer edge polishing device moves the base plate 32 in the direction Y2 away from the wafer 27 by driving the linear guide based on the load detected by the load sensor 76, and can adjust the contact force of the polishing tape 33 on the edge surface 27a of the wafer 27. This prevents the polishing tape 33 from being pressed too hard against the edge surface 27a of the wafer 27, and allows the polishing tape 33 to be pressed against the edge surface 27a of the wafer 27 with an optimal contact force, polishing the edge surface 27a more accurately.
- a roller moving mechanism 25 that includes an upper moving plate 45 as a first moving plate, a lower moving plate 46 as a second moving plate, a driving plate 48, and a driving unit 50 that applies a driving force to the driving plate 48.
- the roller moving mechanism 25 has the driving plate 48 pushing the arc-shaped plate portion 48a upward or downward with the rotation center 47a as the rotation axis by the driving force from the driving unit 50.
- the roller moving mechanism 25 moves the upper moving plate 45 and the lower moving plate 46 closer to or farther away from the end surface 27a of the wafer 27.
- the present invention is not limited to this.
- a roller movement mechanism 251 may be provided that includes an upper moving plate 81 as a first moving plate, a lower moving plate 82 as a second moving plate, a pair of engagement parts 81a, 82a, an engagement rotation part 83a, and a drive part 83.
- the upper moving plate 81 which is the first moving plate
- the lower moving plate 82 which is the second moving plate
- the upper moving plate 81 is composed of a metal plate-shaped body having a longitudinal direction in the Y direction.
- the upper moving plate 81 has a first roller 43 rotatably attached to its tip.
- the upper moving plate 81 is attached to the base plate 32 so as to be movable in the direction (Y direction) in which the first roller 43 approaches or moves away from the edge surface 27a of the wafer 27.
- the upper moving plate 81 has a recess 811 formed on the surface facing the lower moving plate 82 in the center.
- An engagement portion 81a such as a rack is provided approximately in the center of the recess 811.
- the engagement portion 81a may be a worm or the like other than a rack.
- the lower moving plate 82 like the upper moving plate 81, is made of a metal plate-shaped body having a longitudinal direction in the Y direction.
- the lower moving plate 82 has a second roller 44 rotatably attached to its tip.
- the lower moving plate 82 is arranged so that its longitudinal direction faces the longitudinal direction (Y-axis direction) of the upper moving plate 81, and is attached to the base plate 32 so as to be movable in the direction (Y direction) that moves the second roller 44 closer to or farther away from the end surface 27a of the wafer 27.
- the lower moving plate 82 has a recess 821 formed on the surface facing the upper moving plate 81.
- An engaging portion 82a such as a rack is provided approximately in the center of the recess 821. Note that the engaging portion 82a may be a worm or the like other than a rack, like the one engaging portion 81a.
- the engaging rotation part 83a is provided between the recess 811 of the upper moving plate 81 and the recess 821 of the lower moving plate 82.
- the engaging rotation part 83a is provided so as to be rotatable around the center of rotation as the rotation axis by the driving force from the driving part 83 such as a motor.
- the engaging rotation part 83a is, for example, a pinion gear, and has a configuration in which irregularities are formed on the outer circumferential surface.
- the engaging rotation part 83a meshes with a pair of engaging parts 81a, 82a of the upper moving plate 81 and the lower moving plate 82, respectively.
- the engaging rotation part 83a rotates counterclockwise and clockwise by the driving force from the driving part 83, and the engagement position with the pair of engaging parts 81a, 82a moves as a result of the rotation.
- the engaging rotation part 83a moves the upper moving plate 81 and the lower moving plate 82 along the Y direction as it rotates.
- the engaging rotation part 83a rotates counterclockwise, the upper moving plate 81 moves in a direction approaching the end surface 27a of the wafer 27, and at the same time, the lower moving plate 82 moves in a direction away from the end surface 27a of the wafer 27.
- the upper moving plate 81 and the lower moving plate 82 are provided with a load sensor 84 at the base (rear end) side away from the end surface 27a of the wafer 27.
- the load sensor 84 may be, for example, a resistance strain gauge type load sensor.
- the load sensor 84 has an upper detection unit 84a and a lower detection unit 84b.
- the upper detection unit 84a abuts against the rear end of the upper moving plate 81 and detects the force acting in the Y direction of the upper moving plate 81 as the upper moving plate 81 moves.
- the lower detection unit 84b abuts against the rear end of the lower moving plate 82 and detects the force acting in the Y direction of the lower moving plate 82 as the lower moving plate 82 moves.
- the tip of the upper moving plate 81 is provided with a first roller 43 constituting the roller group 24.
- the tip of the lower moving plate 82 is provided with a second roller 44 constituting the roller group 24.
- a back pad 55 is provided between the first roller 43 and the second roller 44.
- the polishing tape 33 to be transported is provided on the first roller 43, the second roller 44, and the surface of the back pad 55 facing the end face 27a of the wafer 27.
- the first roller 43, the second roller 44, and the back pad 55 are supported so as to be freely slidable by linking parts 56a, 56b in which a long hole 57 is formed.
- the first roller 43, the second roller 44, and the back pad 55 move in a direction approaching the end face 27a of the wafer 27 or in a direction away from the end face 27a depending on the inclination state of the linking parts 56a, 56b.
- the first roller 43, the second roller 44, the back pad 55, and the linking parts 56a and 56b have the same configuration as those shown in Figures 4 and 5, and detailed description will be omitted.
- the contact/separation states of the first roller 43 and the second roller 44 can be divided into at least three types, the first polishing operation, the second polishing operation, and the third polishing operation, as in the above-mentioned embodiment.
- the first polishing operation as shown in FIG. 13, the protruding positions of the first roller 43, the second roller 44, and the back pad 55 relative to the edge surface 27a of the wafer 27 are aligned in the Z direction, and the polishing tape 33 is moved in a stretched state along the Z direction.
- the Z direction position of the middle position 27b of the thickness of the wafer 27 and the reference line O of the wafer edge polishing device 80 are aligned by a wafer lifting mechanism (not shown).
- the roller moving mechanism 251 brings the polishing tape 33 stretched between the first roller 43 and the second roller 44 into contact with the end surface 27a of the wafer 27, and vertically polishes the end surface 27a of the wafer 27 along the Z direction.
- the load sensor 84 detects the force in the Y direction acting on the upper moving plate 81 by the upper detection unit 84a, and detects the force in the Y direction acting on the lower moving plate 82 by the lower detection unit 84b.
- the roller moving mechanism 251 rotates the engaging rotation unit 83a according to the force detected by the load sensor 84, and changes the meshing position between the engaging rotation unit 83a and one of the engaging units 81a and the meshing position between the engaging rotation unit 83a and the other engaging unit 82a.
- the roller moving mechanism 251 adjusts the state of contact of the polishing tape 33 with the end surface 27a of the wafer 27 so that the amount of polishing of the end surface 27a of the wafer 27 is uniform.
- the drive unit 83 rotates the engagement rotation unit 83a counterclockwise, moving the meshing position between the engagement rotation unit 83a and one of the engagement units 81a toward the rear end of the engagement unit 81a, and simultaneously moving the meshing position between the engagement rotation unit 83a and the other engagement unit 82a toward the tip end of the engagement unit 82a.
- the upper moving plate 81 moves toward the edge surface 27a of the wafer 27, and the lower moving plate 82 moves away from the edge surface 27a of the wafer 27.
- the intermediate position 27b of the thickness of the wafer 27 is moved downward in the Z direction below the reference line O of the wafer edge polishing device 80 by a wafer lifting mechanism (not shown).
- the upper sides of the linking parts 56a, 56b are tilted toward the wafer 27 around the back pad 55.
- the first roller 43 is moved along the long holes 57 of the linking parts 56a, 56b in a direction approaching the wafer 27 around the back pad 55, and at the same time, the second roller 44 is moved in a direction away from the wafer 27 around the back pad 55. Due to the tilted state of the first roller 43, second roller 44, and back pad 55, the polishing tape 33 is tilted so that it gradually moves away from the edge surface 27a of the wafer 27 from the top to the bottom in the Z direction.
- the polishing tape 33 which is continuously transferred in an inclined state between the first roller 43 and the second roller 44, is pressed against the upper corners of the end surface 27a of the rotating wafer 27, and the upper corners of the end surface 27a of the wafer 27 can be polished by the polishing tape 33.
- the roller moving mechanism 251 detects the forces acting on the upper moving plate 81 and the lower moving plate 82 by the upper detection portion 84a and the lower detection portion 84b of the load sensor 84, and adjusts the meshing positions of the engaging rotation portion 83a and the pair of engaging portions 81a, 82a based on the detection results.
- the roller moving mechanism 251 changes the contact state of the polishing tape 33 against the end surface 27a of the wafer 27, and adjusts the amount of polishing around the upper end surface of the end surface 27a of the wafer 27.
- the drive unit 83 rotates the engagement rotation unit 83a clockwise, moving the meshing position between the engagement rotation unit 83a and one of the engagement units 81a toward the tip end of the engagement unit 81a, and simultaneously moving the meshing position between the engagement rotation unit 83a and the other engagement unit 82a toward the rear end of the engagement unit 82a.
- the upper moving plate 81 moves in a direction away from the edge surface 27a of the wafer 27, and the lower moving plate 82 moves in a direction approaching the edge surface 27a of the wafer 27.
- the wafer lifting mechanism (not shown) moves the intermediate position 27b of the thickness of the wafer 27 upward in the Z direction above the reference line O of the wafer edge polishing device 80.
- the lower sides of the linking parts 56a, 56b are tilted toward the wafer 27 around the back pad 55.
- the first roller 43 is moved along the long holes 57 of the linking parts 56a, 56b in a direction away from the wafer 27 around the back pad 55, and at the same time, the second roller 44 is moved in a direction approaching the wafer 27 around the back pad 55. Due to the tilted state of the first roller 43, second roller 44, and back pad 55, the polishing tape 33 is tilted from the top to the bottom in the Z direction so as to gradually approach the edge surface 27a of the wafer 27.
- the polishing tape 33 which is continuously transferred in an inclined state between the first roller 43 and the second roller 44, is pressed against the lower corners of the end face 27a of the rotating wafer 27, and the lower corners of the end face 27a of the wafer 27 can be polished by the polishing tape 33.
- the roller moving mechanism 251 detects the compressive force acting on the upper moving plate 81 and the lower moving plate 82 by the upper detection part 84a and the lower detection part 84b of the load sensor 84, and adjusts the meshing positions of the engaging rotation part 83a and the pair of engaging parts 81a, 82a based on the detection results.
- the roller moving mechanism 251 changes the contact state of the polishing tape 33 against the end face 27a of the wafer 27, and adjusts the amount of polishing around the lower end face of the end face 27a of the wafer 27.
- This embodiment also provides the same effects and advantages as the above-mentioned embodiment. Furthermore, this embodiment allows the upper moving plate 81 and the lower moving plate 82 to be moved closer to or farther away from the edge surface 27a of the wafer 27 with a simple structure using an engaging rotating part and an engaging part, such as a rack and pinion. This allows for a simplified structure of the wafer edge surface polishing device 80, and is expected to improve durability due to the simple structure.
- the wafer edge polishing device 80 equipped with the roller moving mechanism 251 may be configured to have a tape switching mechanism 65 for switching between the first polishing tape 63 and the second polishing tape 64 of two different roughnesses, as shown in FIG. 11.
- the wafer edge polishing device 80 is equipped with a first roller group 66, a second roller group 67 provided next to the first roller group 66, a first tape transfer mechanism 68, and a second tape transfer mechanism 69 in addition to the tape switching mechanism 65.
- the wafer edge polishing device 80 can adjust the inclination angle of the first polishing tape 63 and the second polishing tape 64 by rotating the engagement rotation part 83a by the drive part 83 to adjust the meshing positions of the engagement rotation part 83a and the pair of engagement parts 81a, 82a. This allows the contact state of the first polishing tape 63 and the second polishing tape 64 with the edge surface 27a of the wafer 27 to be changed.
- the switching operation of the first polishing tape 63 or the second polishing tape 64 by the tape switching mechanism 65, the operation of the first roller group 66 and the second roller group 67 when polishing the end surface 27a of the wafer 27, the adjustment operation of the inclination angle of the first polishing tape 63 and the second polishing tape 64, the lifting and lowering operation of the wafer 27 by the wafer lifting mechanism 23 during the polishing operation, etc. are the same as those in the above-mentioned embodiment, so their explanations will be omitted here.
- Second tape transfer mechanism 16 Wafer edge inspection device 17, 62, 80 Wafer edge polishing device 22 Wafer rotation mechanism 23 Wafer lifting mechanism 25, 251 Roller movement mechanism 26 Tape transfer mechanism 27 Wafer 27a Edge 29 Rotating shaft 43, 43a First roller 44, 44a Second roller 63 First polishing tape 64 Second polishing tape 65 Tape switching mechanism 68 First tape transfer mechanism 69 Second tape transfer mechanism 81 Upper moving plate (first moving plate) 82 Lower moving plate (second moving plate) 81a, 82a Engagement portion 83 Drive portion 83a Engagement rotation portion
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Abstract
Provided is a wafer end surface polishing device that makes it possible to give an end surface of a wafer an appropriate shape, even when the gap between a first roller and a second roller in the thickness direction of the wafer is made smaller as compared to in the past. A wafer end surface polishing device according to the present invention comprises a wafer rotation mechanism, a wafer raising/lowering mechanism, a first roller 43, a second roller 44, a roller movement mechanism 25, and a tape transfer mechanism 26. The roller movement mechanism 25 moves one or both of the first roller 43 and the second roller 44 toward an end surface 27a of a wafer 27 that is supported by the wafer rotation mechanism and polishes the end surface 27a of the wafer 27 with a polishing tape 33 that is transferred between the first roller 43 and the second roller 44. The wafer raising/lowering mechanism raises/lowers the wafer 27 and thereby changes the position at which the polishing tape 33 contacts the end surface 27a of the wafer 27 in the thickness direction of the wafer 27. The wafer end surface polishing device determines the height position of the wafer 27 during polishing, the contact/separation state of the first roller 43 and the second roller 44, etc. on the basis of data about the shape of the end surface 27a of the wafer 27 as inspected by a wafer end surface inspection device.
Description
本発明は、ウェーハ端面研磨装置に関する。
The present invention relates to a wafer edge polishing device.
近年、ウェーハ端面研磨装置を用いて、ウェーハの端面を研磨して不要な膜や表面荒れを除去することが行われている。例えば、従来のウェーハ端面研磨装置では、ウェーハの中心軸を回転軸として当該ウェーハを回転させ、ウェーハの厚み方向に移送している研磨テープをウェーハの端面に摺接させて、ウェーハの端面を円弧状に研磨している(例えば、特許文献1参照)。
In recent years, wafer edge polishing devices have been used to polish the edge of a wafer to remove unwanted films and surface roughness. For example, in a conventional wafer edge polishing device, the wafer is rotated around its central axis as the axis of rotation, and a polishing tape moved in the thickness direction of the wafer is brought into sliding contact with the edge of the wafer, polishing the edge of the wafer into an arc shape (see, for example, Patent Document 1).
また、従来のウェーハ端面研磨装置は、ウェーハを挟む位置に下可変ローラと上可変ローラとを配置し、下可変ローラと上可変ローラとの間に張架された研磨テープをウェーハの厚み方向に移送させるとともに、下可変ローラと上可変ローラの各々がウェーハの端面に近づく方向に移動可能に設けられている。これにより、ウェーハ端面研磨装置では、下可変ローラと上可変ローラの各々を個別にウェーハに近づけることで、ウェーハの端面に対する研磨テープの傾斜角度を自在に変更し、ウェーハの端面が最適な形状になるように研磨することができる。
In addition, conventional wafer edge polishing devices place a lower variable roller and an upper variable roller at a position that sandwiches the wafer, and transport a polishing tape stretched between the lower and upper variable rollers in the thickness direction of the wafer, with the lower and upper variable rollers each being movable in a direction approaching the wafer's edge. As a result, in the wafer edge polishing device, by individually bringing the lower and upper variable rollers closer to the wafer, the inclination angle of the polishing tape relative to the wafer's edge can be freely changed, and the wafer's edge can be polished to an optimal shape.
しかしながら、従来のウェーハ端面研磨装置は、ウェーハを厚み方向から挟み込んでいる下可変ローラと上可変ローラの位置を変えて、ウェーハの端面に対する研磨テープの傾斜角度を変えることで、ウェーハの端面上角部から端面下角部まで端面全体を最適な形状に研磨していることから、研磨テープが張架された下可変ローラと上可変ローラとの間にウェーハの端面全体が配置されるように、ウェーハを挟む位置に下可変ローラと上可変ローラとを設ける必要がある。このため、従来のウェーハ端面研磨装置にてウェーハの端面全体を最適な形状に研磨するためには、研磨テープが張架された下可変ローラと上可変ローラとの間隙をウェーハの厚み以上とし、ウェーハの厚み方向において下可変ローラと上可変ローラとでウェーハの端面全体を挟み込む必要があり、その分、ウェーハの厚み方向における下可変ローラと上可変ローラとの間隙が大きくなってしまうという問題があった。
However, conventional wafer edge polishing devices polish the entire edge of the wafer from the upper corner to the lower corner by changing the position of the lower variable roller and upper variable roller that sandwich the wafer in the thickness direction and changing the inclination angle of the polishing tape relative to the wafer edge, so that the lower variable roller and upper variable roller must be provided in a position to sandwich the wafer so that the entire edge of the wafer is positioned between the lower variable roller and upper variable roller on which the polishing tape is stretched. Therefore, in order to polish the entire edge of the wafer to the optimal shape using conventional wafer edge polishing devices, the gap between the lower variable roller and upper variable roller on which the polishing tape is stretched must be greater than or equal to the wafer thickness, and the entire edge of the wafer must be sandwiched between the lower variable roller and upper variable roller in the wafer thickness direction, which poses the problem of a larger gap between the lower variable roller and upper variable roller in the wafer thickness direction.
この発明は上記の事情を背景としてなされたものであって、ウェーハの厚み方向における第1ローラと第2ローラとの間隙を従来よりも小さくしても、ウェーハの端面を適切な形状に形成することができるウェーハ端面研磨装置を提供することを目的とする。
This invention was made against the background of the above circumstances, and aims to provide a wafer edge polishing device that can form the edge of the wafer into an appropriate shape even if the gap between the first roller and the second roller in the thickness direction of the wafer is made smaller than in the past.
本発明に係るウェーハ端面研磨装置は、ウェーハを支持し、前記ウェーハの中心軸を回転軸として前記ウェーハを周方向に回転させるウェーハ回転機構と、前記ウェーハ回転機構により支持された前記ウェーハを中心軸方向に昇降させるウェーハ昇降機構と、前記ウェーハ回転機構により支持された前記ウェーハの径方向外側に配置された第1ローラと、前記ウェーハ回転機構により支持された前記ウェーハの径方向外側に配置され、かつ、前記ウェーハの厚み方向で前記第1ローラと対向して配置された第2ローラと、前記第1ローラ及び前記第2ローラに巻き掛けさせた研磨テープを、前記第1ローラ及び前記第2ローラの間に張架させ、前記第1ローラ及び前記第2ローラの間で前記研磨テープを移送させるテープ移送機構と、前記第1ローラ及び前記第2ローラの各々を、独立して前記ウェーハの端面に近づく方向及び遠ざかる方向に移動させ、前記研磨テープを前記ウェーハの端面に接離する方向に移動させるローラ移動機構と、を備え、前記ローラ移動機構は、前記第1ローラ及び前記第2ローラの両方又はいずれか一方を、前記ウェーハ回転機構により支持された前記ウェーハの端面に近づく方向に移動し、前記第1ローラ及び前記第2ローラの間で移送されている前記研磨テープで前記ウェーハの端面を研磨させ、前記ウェーハ昇降機構は、前記ウェーハを昇降させることにより、前記ウェーハの厚み方向で前記研磨テープが接する前記ウェーハの端面の位置を変更させる。
The wafer edge polishing apparatus according to the present invention comprises a wafer rotation mechanism that supports a wafer and rotates the wafer in a circumferential direction around the central axis of the wafer as a rotation axis, a wafer lifting mechanism that raises and lowers the wafer supported by the wafer rotation mechanism in the central axis direction, a first roller arranged radially outward of the wafer supported by the wafer rotation mechanism, a second roller arranged radially outward of the wafer supported by the wafer rotation mechanism and opposed to the first roller in the thickness direction of the wafer, and a polishing tape wound around the first roller and the second roller is stretched between the first roller and the second roller, and the polishing tape is moved between the first roller and the second roller. The system includes a tape transport mechanism that transports the tape, and a roller movement mechanism that moves each of the first roller and the second roller independently in a direction toward and away from the edge surface of the wafer, and moves the polishing tape in a direction toward and away from the edge surface of the wafer. The roller movement mechanism moves both or either of the first roller and the second roller in a direction toward the edge surface of the wafer supported by the wafer rotation mechanism, and polishes the edge surface of the wafer with the polishing tape being transported between the first roller and the second roller. The wafer lift mechanism lifts and lowers the wafer, thereby changing the position of the edge surface of the wafer that the polishing tape contacts in the thickness direction of the wafer.
本発明は、第1ローラ及び第2ローラの各々が独立してウェーハ端面に近づく方向にそれぞれ移動し、研磨テープの傾斜角度を変えることができることに加えて、ウェーハ昇降機構によってウェーハを中心軸方向に移動させることができるので、研磨テープの傾斜角度を調整してウェーハの端面に研磨テープが接する位置を変更できるとともに、中心軸方向に沿ってウェーハの端面の高さ位置を変えることでもウェーハの端面に研磨テープが接する位置を変更できる。このため、研磨テープが移送する第1ローラと第2ローラとの間に、ウェーハの端面全体を必ずしも配置させなくても、ウェーハの端面の高さ位置を適宜変えることでウェーハの端面全体を研磨することができる。よって、ウェーハの厚み方向における第1ローラと第2ローラとの間隙を従来よりも小さくしても、ウェーハの端面を適切な形状に形成することができる。
In the present invention, the first roller and the second roller each move independently in a direction approaching the wafer edge surface, and the inclination angle of the polishing tape can be changed. In addition, the wafer can be moved in the direction of the central axis by the wafer lifting mechanism. This means that the position where the polishing tape contacts the wafer edge surface can be changed by adjusting the inclination angle of the polishing tape, and the position where the polishing tape contacts the wafer edge surface can also be changed by changing the height position of the wafer edge surface along the central axis. Therefore, even if the entire wafer edge surface is not necessarily positioned between the first roller and the second roller that transport the polishing tape, the entire wafer edge surface can be polished by appropriately changing the height position of the wafer edge surface. Therefore, even if the gap between the first roller and the second roller in the wafer thickness direction is made smaller than before, the wafer edge surface can be formed into an appropriate shape.
以下、本発明にかかるウェーハ端面研磨装置の好適な実施の形態を添付図面に基づいて詳細に説明する。以下の説明において、同一の構成要素には同一の符号を付し、重複する説明は省略する。
Below, a preferred embodiment of the wafer edge polishing device according to the present invention will be described in detail with reference to the attached drawings. In the following description, the same components are given the same reference numerals, and duplicate descriptions will be omitted.
図1は、本発明にかかるウェーハ端面研磨装置17を含むウェーハ加工システム10の構成を示す平面図である。ウェーハ加工システム10は、4個のカセット置き台11,12,13,14、オリフラ・ノッチ検出装置15、ウェーハ端面検査装置16、ウェーハ端面研磨装置17、及び移載機18等を備えている。4個のカセット置き台11~14、オリフラ・ノッチ検出装置15、ウェーハ端面検査装置16、ウェーハ端面研磨装置17は、移載機18を取り囲むように移載機18を中心として略円状に配置されている。
FIG. 1 is a plan view showing the configuration of a wafer processing system 10 including a wafer edge polishing device 17 according to the present invention. The wafer processing system 10 is equipped with four cassette stands 11, 12, 13, 14, an orientation flat/notch detection device 15, a wafer edge inspection device 16, a wafer edge polishing device 17, and a transfer machine 18. The four cassette stands 11-14, the orientation flat/notch detection device 15, the wafer edge inspection device 16, and the wafer edge polishing device 17 are arranged in an approximately circular shape with the transfer machine 18 at the center so as to surround the transfer machine 18.
4個のカセット置き台11~14は、ウェーハカセットを載置する載置台であり、これらは円弧線状に配列されている。ウェーハカセットは、略円盤状のウェーハを複数収納する。なお、4個のカセット置き台11~14の近傍には、ウェーハカセットの各々の受け入れ、及び払い出しを行うローダ/アンローダ部19が設けられている。
The four cassette stands 11-14 are stands on which wafer cassettes are placed, and are arranged in an arc shape. A wafer cassette stores multiple, roughly disk-shaped wafers. A loader/unloader unit 19 is provided near the four cassette stands 11-14 to receive and eject each of the wafer cassettes.
移載機18は、ウェーハカセット、ウェーハ端面検査装置16、及びウェーハ端面研磨装置17の各々に、ウェーハの投入、及び払い出しを行う。オリフラ・ノッチ検出装置15は、ウェーハの端面に形成されたオリフラやノッチの位置を検査する。オリフラ・ノッチ検出装置15で得られた検査結果は、ウェーハカセットへの収納時のオリフラ・ノッチ合わせを行う際や、ウェーハ端面検査装置16、及びウェーハ端面研磨装置17でのオリフラ・ノッチの位置決めを行う際の情報として使用する。
The transfer machine 18 loads and unloads wafers into and from the wafer cassette, wafer edge inspection device 16, and wafer edge polishing device 17. The orientation flat and notch detection device 15 inspects the position of the orientation flat and notch formed on the edge of the wafer. The inspection results obtained by the orientation flat and notch detection device 15 are used as information when aligning the orientation flat and notch when storing the wafer in the wafer cassette, and when positioning the orientation flat and notch in the wafer edge inspection device 16 and wafer edge polishing device 17.
ウェーハ端面検査装置16は、ウェーハの端面形状を検査して、得られた検査結果をウェーハ端面研磨装置17に出力する。ウェーハ端面研磨装置17は、ウェーハ端面検査装置16から受け取った検査結果に基づいて、例えば、ウェーハの端面を断面円弧状に研磨する。なお、端面が研磨されたウェーハは、その後洗浄される。洗浄後のウェーハは、元にあったカセット置き台11~14に載置されたウェーハカセットに払い出しされる。
The wafer edge inspection device 16 inspects the shape of the wafer edge and outputs the inspection results to the wafer edge polishing device 17. Based on the inspection results received from the wafer edge inspection device 16, the wafer edge polishing device 17 polishes the wafer edge, for example, into a cross-sectional arc shape. The wafers whose edge has been polished are then cleaned. After cleaning, the wafers are dispensed into the wafer cassettes placed back on the cassette stands 11-14.
図2は、ウェーハ端面研磨装置17の構成を示す側面図である。図2に示すように、ウェーハ端面研磨装置17は、ウェーハ回転機構22、ウェーハ昇降機構23、ローラ群24、ローラ移動機構25、及びテープ移送機構26を備える。なお、図2は、ウェーハ27の中心軸が延びる中心軸方向をZ方向で示す。また、図2は、後述するローラ群24がウェーハ27に近づく方向及び遠ざかる方向と、ローラ群24で移送する研磨テープがウェーハ27の端面に接離する方向とが同じ方向であってZ方向と直交しており、これら方向をY方向で示す。さらに、図2は、Y方向及びZ方向と直交する方向をX方向と示し、X方向及びY方向を含むXY面がウェーハ27の面方向となる。
FIG. 2 is a side view showing the configuration of the wafer edge polishing device 17. As shown in FIG. 2, the wafer edge polishing device 17 includes a wafer rotation mechanism 22, a wafer lifting mechanism 23, a roller group 24, a roller movement mechanism 25, and a tape transfer mechanism 26. Note that FIG. 2 shows the central axis direction in which the central axis of the wafer 27 extends as the Z direction. Also, in FIG. 2, the directions in which the roller group 24 described below moves toward and away from the wafer 27 and the direction in which the polishing tape moved by the roller group 24 approaches and separates from the edge surface of the wafer 27 are the same direction and perpendicular to the Z direction, and these directions are shown as the Y direction. Furthermore, FIG. 2 shows the direction perpendicular to the Y direction and the Z direction as the X direction, and the XY plane including the X direction and the Y direction is the surface direction of the wafer 27.
ウェーハ端面研磨装置17には、移載テーブル30aが設けられており、移載機18(図1)によってウェーハ端面検査装置16から移載テーブル30aにウェーハ27がロードされる。ウェーハ端面研磨装置17は、アーム20を介して移動可能に設けられた移載保持部21を備えており、移載テーブル30aにロードされたウェーハ27を、アーム20を移動させて移載保持部21で把持する。そして、ウェーハ端面研磨装置17は、ウェーハ27を把持した移載保持部21をアーム20によりウェーハ回転機構22のテーブル30まで運び、最適な位置及び向きで当該ウェーハ27をテーブル30にロードする。
The wafer edge polishing device 17 is provided with a transfer table 30a, and the wafer 27 is loaded onto the transfer table 30a from the wafer edge inspection device 16 by the transfer machine 18 (Fig. 1). The wafer edge polishing device 17 is provided with a transfer holder 21 that is movable via an arm 20, and the arm 20 is moved to grip the wafer 27 loaded onto the transfer table 30a with the transfer holder 21. The wafer edge polishing device 17 then transports the transfer holder 21 holding the wafer 27 to the table 30 of the wafer rotation mechanism 22 by the arm 20, and loads the wafer 27 onto the table 30 in the optimal position and orientation.
ウェーハ回転機構22は、駆動モータ28により回転する回転軸29の上端にテーブル30が設けられており、図示しない吸気部によって当該テーブル30の頂上部から吸気が行われている。これにより、ウェーハ回転機構22は、テーブル30上にウェーハ27が載置されると、当該ウェーハ27をテーブル30にバキューム吸着させ、テーブル30によってウェーハ27を支持する。ウェーハ回転機構22は、駆動モータ28を駆動させることにより、回転軸29を中心にテーブル30を回転させ、テーブル30によりウェーハ27を支持したまま、ウェーハ27の中心軸を回転軸として水平面内でウェーハ27を周方向に回転させる。
The wafer rotation mechanism 22 has a table 30 attached to the upper end of a rotating shaft 29 that is rotated by a drive motor 28, and air is drawn in from the top of the table 30 by an air intake unit (not shown). As a result, when a wafer 27 is placed on the table 30, the wafer rotation mechanism 22 vacuum-adsorbs the wafer 27 to the table 30 and supports the wafer 27 with the table 30. By driving the drive motor 28, the wafer rotation mechanism 22 rotates the table 30 around the rotating shaft 29, and rotates the wafer 27 in a circumferential direction in a horizontal plane with the central axis of the wafer 27 as the axis of rotation while the wafer 27 is supported by the table 30.
ウェーハ昇降機構23は、ウェーハ回転機構22を保持しており、ウェーハ回転機構22を介してウェーハ27を中心軸方向(Z方向)に移動させる。
The wafer lifting mechanism 23 holds the wafer rotation mechanism 22 and moves the wafer 27 in the central axis direction (Z direction) via the wafer rotation mechanism 22.
ローラ群24、ローラ移動機構25、及びテープ移送機構26を研磨機構31と称す。研磨機構31は、ベース板32に設けられている。ベース板32は、ウェーハ27の端面に近づく方向又は遠ざかる方向(Y方向)に移動自在に構成されており、当該ベース板32に設けられた研磨機構31をウェーハ27の端面に近づく方向又は遠ざかる方向に移動させる。
The roller group 24, roller movement mechanism 25, and tape transfer mechanism 26 are referred to as the polishing mechanism 31. The polishing mechanism 31 is provided on a base plate 32. The base plate 32 is configured to be freely movable in a direction toward or away from the edge face of the wafer 27 (Y direction), and moves the polishing mechanism 31 provided on the base plate 32 in a direction toward or away from the edge face of the wafer 27.
図3は、研磨機構31の構成を示す要部側面図である。ローラ群24は、ウェーハ27の径方向外側に配置され、ウェーハ27の厚み方向に研磨テープ33が張架されて移送される構成を有する。テープ移送機構26は、ローラ群24に向けて研磨テープ33を移送し、当該研磨テープ33に張力を与えてローラ群24において研磨テープ33を張架させ、当該研磨テープ33を張架させた状態でローラ群24において移送させる。研磨テープ33は、例えば、超微粒子研磨材を樹脂接着材に均一に分散させてコーティングしたフィルムであり、研磨材の粒度に応じて、設定された粗さに端面27aを研磨する。なお、図3に示す一点鎖線Oは、ローラ群24の高さ方向(Z方向)での基準を示す基準線である。
FIG. 3 is a side view of the main part showing the configuration of the polishing mechanism 31. The roller group 24 is arranged radially outside the wafer 27, and the polishing tape 33 is stretched and transported in the thickness direction of the wafer 27. The tape transport mechanism 26 transports the polishing tape 33 toward the roller group 24, applies tension to the polishing tape 33 to stretch it on the roller group 24, and transports the polishing tape 33 on the roller group 24 in a stretched state. The polishing tape 33 is, for example, a film coated with ultrafine abrasive particles uniformly dispersed in a resin adhesive, and polishes the end surface 27a to a set roughness according to the grain size of the abrasive. The dashed line O shown in FIG. 3 is a reference line indicating the reference in the height direction (Z direction) of the roller group 24.
この場合、テープ移送機構26は、テープ送りリール34、テープ巻き取りリール35、テンションローラ36,37、モータローラ38,39、及び抑えローラ40,41を備え、これらテープ送りリール34、テープ巻き取りリール35、テンションローラ36,37、モータローラ38,39、及び抑えローラ40,41が、ベース板32に設けられた構成を有する。テンションローラ36、モータローラ38及び抑えローラ40は、テープ送りリール34からローラ24群へ研磨テープ33を搬送する送り側に配置されている。テンションローラ37、モータローラ39及び抑えローラ41は、ローラ群24からテープ巻き取りリール35へ研磨テープ33を搬送する巻き取り側に配置されている。
In this case, the tape transfer mechanism 26 includes a tape feed reel 34, a tape take-up reel 35, tension rollers 36, 37, motor rollers 38, 39, and pressure rollers 40, 41, and the tape feed reel 34, tape take-up reel 35, tension rollers 36, 37, motor rollers 38, 39, and pressure rollers 40, 41 are mounted on a base plate 32. The tension roller 36, motor roller 38, and pressure roller 40 are disposed on the feed side that transports the polishing tape 33 from the tape feed reel 34 to the roller group 24. The tension roller 37, motor roller 39, and pressure roller 41 are disposed on the take-up side that transports the polishing tape 33 from the roller group 24 to the tape take-up reel 35.
テープ送りリール34から引き出された研磨テープ33は、テンションローラ36の外周面で曲げられ、モータローラ38及び抑えローラ40の間に導かれ、モータローラ38及び抑えローラ40に挟み込まれた後、モータローラ38及び抑えローラ40の間から送出されてモータローラ38の外周面でローラ群24に向けて曲げられ、ローラ群24まで搬送される。ローラ群24に搬送された研磨テープ33は、ローラ群24からモータローラ39に向けて送出され、モータローラ39の外周面に沿って当該モータローラ39及び抑えローラ41の間に導かれ、モータローラ39及び抑えローラ41に挟み込まれた後、モータローラ39及び抑えローラ41の間からテンションローラ37に向けて送出され、テンションローラ37の外周面でテープ巻き取りリール35に向けて曲げられ、テープ巻き取りリール35で巻き取られる。
The polishing tape 33 pulled out from the tape feed reel 34 is bent at the outer peripheral surface of the tension roller 36, guided between the motor roller 38 and the pressure roller 40, sandwiched between the motor roller 38 and the pressure roller 40, and then sent out from between the motor roller 38 and the pressure roller 40, bent at the outer peripheral surface of the motor roller 38 toward the roller group 24, and transported to the roller group 24. The polishing tape 33 transported to the roller group 24 is sent out from the roller group 24 toward the motor roller 39, guided along the outer peripheral surface of the motor roller 39 between the motor roller 39 and the pressure roller 41, sandwiched between the motor roller 39 and the pressure roller 41, sent out from between the motor roller 39 and the pressure roller 41 toward the tension roller 37, bent at the outer peripheral surface of the tension roller 37 toward the tape take-up reel 35, and taken up by the tape take-up reel 35.
テープ移送機構26は、このようにしてローラ群24を構成する第1ローラ43及び第2ローラ44に研磨テープ33を移送し、第1ローラ43及び第2ローラ44に巻き掛けさせた研磨テープ33を、第1ローラ43及び第2ローラ44の間に張架させて、第1ローラ43及び第2ローラ44の間で研磨テープ33を連続して移送させ続ける。すなわち、テープ移送機構26は、ウェーハ27の端面27aを研磨する際、モータローラ38,39を駆動してモータローラ38,39を回転させることにより、テープ送りリール34から送出された研磨テープ33を上述した搬送路に沿って第1ローラ43まで導き、当該第1ローラ43の外周に研磨テープ33を巻き掛けて研磨テープ33の搬送方向を変えて第2ローラ44に向けて延ばし、当該第2ローラ44の外周に研磨テープ33を巻き掛けて研磨テープ33の搬送方向を変えてテープ巻き取りリール35に向けて研磨テープ33を連続して移送し続ける。
In this way, the tape transfer mechanism 26 transfers the polishing tape 33 to the first roller 43 and the second roller 44 that constitute the roller group 24, and the polishing tape 33 wound around the first roller 43 and the second roller 44 is stretched between the first roller 43 and the second roller 44, and continues to transfer the polishing tape 33 between the first roller 43 and the second roller 44. That is, when polishing the end surface 27a of the wafer 27, the tape transfer mechanism 26 drives the motor rollers 38, 39 to rotate the motor rollers 38, 39, thereby guiding the polishing tape 33 sent out from the tape feed reel 34 along the above-mentioned transport path to the first roller 43, winding the polishing tape 33 around the outer periphery of the first roller 43, changing the transport direction of the polishing tape 33 and extending it toward the second roller 44, and winding the polishing tape 33 around the outer periphery of the second roller 44, changing the transport direction of the polishing tape 33, and continues to transport the polishing tape 33 toward the tape take-up reel 35.
ローラ移動機構25は、ベース板32に設けられており、ベース板32がウェーハ27の端面27aに近づく方向又は遠ざかる方向(Y方向)に移動することにより、当該ベース板32とともにウェーハ27の端面27aに近づく方向又は遠ざかる方向に移動する。ここで、図4は、ローラ移動機構25の要部の構成を示す斜視図である。図4に示すように、ローラ移動機構25は、ローラ群24として第1ローラ43及び第2ローラ44が設けられており、ベース板32によるY方向への移動とは別に、第1ローラ43及び第2ローラ44の各々を、独立してウェーハ27の端面27aに近づく方向及び遠ざかる方向(Y方向)に移動させる構成を有する。
The roller moving mechanism 25 is provided on the base plate 32, and moves together with the base plate 32 toward or away from the end surface 27a of the wafer 27 as the base plate 32 moves toward or away from the end surface 27a of the wafer 27 (Y direction). Here, FIG. 4 is a perspective view showing the configuration of the main parts of the roller moving mechanism 25. As shown in FIG. 4, the roller moving mechanism 25 is provided with a first roller 43 and a second roller 44 as the roller group 24, and is configured to move each of the first roller 43 and the second roller 44 independently toward or away from the end surface 27a of the wafer 27 (Y direction) separately from the movement in the Y direction by the base plate 32.
第1ローラ43と第2ローラ44とは、XY面にあるウェーハ27の回転面に直交するウェーハ27の厚み方向(Z方向)に所定の距離を設けて対向配置されている。第1ローラ43は、ウェーハ回転機構22により支持されたウェーハ27の径方向外側に配置され、第2ローラ44に対して上側に配置されている。第1ローラ43は、上側連結板45a,45bを介して上側移動板45に支持されている。上側移動板45は、ベース板32(図3参照)に対してY方向(水平方向)に移動自在に設けられている。第1ローラ43は、上側移動板45がY方向に移動することにより、当該上側移動板45の移動に連動してウェーハ27の端面27aに近づく方向及び遠ざかる方向(Y方向)に移動する。
The first roller 43 and the second roller 44 are arranged facing each other at a predetermined distance in the thickness direction (Z direction) of the wafer 27 perpendicular to the rotation plane of the wafer 27 on the XY plane. The first roller 43 is arranged radially outward of the wafer 27 supported by the wafer rotation mechanism 22, and is arranged above the second roller 44. The first roller 43 is supported by the upper moving plate 45 via upper connecting plates 45a and 45b. The upper moving plate 45 is provided so as to be movable in the Y direction (horizontal direction) relative to the base plate 32 (see FIG. 3). As the upper moving plate 45 moves in the Y direction, the first roller 43 moves in a direction approaching and away from the end surface 27a of the wafer 27 (Y direction) in conjunction with the movement of the upper moving plate 45.
第1ローラ43が設けられる上側連結板45a,45bは、Y方向に長手方向を有した板状部材であり、上側連結板45a,45bの間に棒状の横架部45cが架け渡され、横架部45cにより所定距離を設けて対向配置されている。第1ローラ43は、所定距離を設けて対向配置された上側連結板45a,45bの間に架け渡され、上側連結板45a,45bの先端側にそれぞれ端部が回転可能に設けられている。
The upper connecting plates 45a, 45b on which the first roller 43 is provided are plate-shaped members with their longitudinal direction in the Y direction, and a rod-shaped cross section 45c is hung between the upper connecting plates 45a, 45b, which are arranged opposite each other at a predetermined distance. The first roller 43 is hung between the upper connecting plates 45a, 45b which are arranged opposite each other at a predetermined distance, and each end is rotatably provided at the tip side of the upper connecting plates 45a, 45b.
第2ローラ44は、ウェーハ回転機構22により支持されたウェーハ27の径方向外側に配置され、第1ローラ43に対して下側に配置されている。第2ローラ44は、下側連結板46a,46bを介して下側移動板46に支持されている。下側移動板46は、ベース板32に対してY方向に移動自在に設けられている。第2ローラ44は、下側移動板46がY方向に移動することにより、当該下側移動板46の移動に連動してウェーハ27の端面27aに近づく方向及び遠ざかる方向(Y方向)に移動する。
The second roller 44 is disposed radially outward of the wafer 27 supported by the wafer rotation mechanism 22, and disposed below the first roller 43. The second roller 44 is supported by the lower moving plate 46 via lower connecting plates 46a and 46b. The lower moving plate 46 is provided so as to be movable in the Y direction relative to the base plate 32. As the lower moving plate 46 moves in the Y direction, the second roller 44 moves in a direction toward and away from the end surface 27a of the wafer 27 (Y direction) in conjunction with the movement of the lower moving plate 46.
第2ローラ44が設けられる下側連結板46a,46bは、Y方向に長手方向を有した板状部材であり、下側連結板46a,46bの間に棒状の横架部46cが架け渡され、横架部46cにより所定距離を設けて対向配置されている。第2ローラ44は、所定距離を設けて対向配置された下側連結板46a,46bの間に架け渡され、下側連結板46a,46bの先端側にそれぞれ端部が回転可能に設けられている。
The lower connecting plates 46a, 46b on which the second roller 44 is provided are plate-shaped members with their longitudinal direction in the Y direction, and a rod-shaped cross section 46c is hung between the lower connecting plates 46a, 46b, which are arranged opposite each other at a predetermined distance by the cross section 46c. The second roller 44 is hung between the lower connecting plates 46a, 46b which are arranged opposite each other at a predetermined distance, and each end is rotatably provided at the tip side of the lower connecting plates 46a, 46b.
上側移動板45と下側移動板46とは、先端側にそれぞれ上側連結板45aと下側連結板46aが連結され、根本部側に環状部49を介して回転板47が連結された構成を有している。回転板47には、回転中心47aに駆動板48及び環状部49が固定されている。環状部49は、Z方向に長手方向を有した楕円形状に形成されており、中心部が回転板47の回転中心47aに固定されている。環状部49には、回転中心47aの上方に上長孔51を有し、上側移動板45の根本に設けられた円状の上カム52が上長孔51に回動自在に係合している。また、環状部49には、回転中心47aの下方に下長孔53を有し、下側移動板46の根本に設けられた円状の下カム54が下長孔53に回動自在に係合している。
The upper moving plate 45 and the lower moving plate 46 are connected to the upper connecting plate 45a and the lower connecting plate 46a at their tip ends, respectively, and are connected to the rotating plate 47 via the annular part 49 at their base ends. The rotating plate 47 has a drive plate 48 and annular part 49 fixed to the rotation center 47a. The annular part 49 is formed in an elliptical shape with its longitudinal direction in the Z direction, and its center is fixed to the rotation center 47a of the rotating plate 47. The annular part 49 has an upper long hole 51 above the rotation center 47a, and a circular upper cam 52 provided at the base of the upper moving plate 45 is rotatably engaged with the upper long hole 51. The annular part 49 also has a lower long hole 53 below the rotation center 47a, and a circular lower cam 54 provided at the base of the lower moving plate 46 is rotatably engaged with the lower long hole 53.
駆動板48は、円弧状板部48aと、円弧状板部48aの内径側の中心から径方向に向けて直線状に延びた長板部48bとを備えており、円弧状板部48a及び長板部48bの連設箇所に上側段差部48cと下側段差部48dとが形成された構成を有する。駆動板48は、長板部48bの先端側が回転板47の回転中心47aに固定され、円弧状板部48aが駆動部50に連結され、駆動部50からの駆動力が円弧状板部48aに与えられる。また、駆動板48は、長板部48bの上方に環状部49の上長孔51が配置されているとともに、長板部48bの下方に環状部49の下長孔53が配置され、長板部48bが上側移動板45及び下側移動板46の間に配置されている。
The driving plate 48 has an arc-shaped plate portion 48a and a long plate portion 48b that extends linearly from the center of the inner diameter side of the arc-shaped plate portion 48a toward the radial direction, and has a configuration in which an upper step portion 48c and a lower step portion 48d are formed at the connecting point of the arc-shaped plate portion 48a and the long plate portion 48b. The driving plate 48 has the tip side of the long plate portion 48b fixed to the rotation center 47a of the rotating plate 47, the arc-shaped plate portion 48a is connected to the driving unit 50, and the driving force from the driving unit 50 is applied to the arc-shaped plate portion 48a. In addition, the driving plate 48 has an upper long hole 51 of the annular portion 49 arranged above the long plate portion 48b, and a lower long hole 53 of the annular portion 49 arranged below the long plate portion 48b, and the long plate portion 48b is arranged between the upper moving plate 45 and the lower moving plate 46.
駆動板48は、駆動部50からの駆動力によって、回転中心47aを回転軸として円弧状板部48aが上方に押し上げられることで、回転板47の回転中心47aを中心に、長板部48b及び環状部49を反時計回りに向けて回転させる。また、駆動板48は、駆動部50からの駆動力によって回転中心47aを回転軸として円弧状板部48aが下方に押し下げられることで、回転板47の回転中心47aを中心に、長板部48b及び環状部49を時計回りに向けて回転させる。
The driving force from the drive unit 50 pushes the arc-shaped plate portion 48a upward around the rotation center 47a as the axis of rotation of the drive plate 48, causing the long plate portion 48b and the annular portion 49 to rotate counterclockwise around the rotation center 47a of the rotating plate 47. The driving force from the drive unit 50 pushes the arc-shaped plate portion 48a downward around the rotation center 47a as the axis of rotation of the drive plate 48, causing the long plate portion 48b and the annular portion 49 to rotate clockwise around the rotation center 47a of the rotating plate 47.
ここでは、回転中心47aを通りY方向に延びる基準線O上に、駆動板48の長板部48bの長手方向が一致している状態を、駆動板48の基準位置とし、以下、駆動板48が基準位置にあるときの構成について説明する。駆動板48が基準位置にある場合は、環状部49の長手方向がY方向と直交するZ方向に向かって延び、当該環状部49の上長孔51が回転中心47aの上方に位置するとともに、当該環状部49の下長孔53が回転中心47aの下方に位置する。これにより、環状部49の上長孔51に係合した上カム52と、環状部49の下長孔53に係合した下カム54とは、Z方向で回転中心47aと直線上に配置される。
Here, the state in which the longitudinal direction of the long plate portion 48b of the drive plate 48 coincides with the reference line O that passes through the rotation center 47a and extends in the Y direction is taken as the reference position of the drive plate 48, and below, the configuration when the drive plate 48 is in the reference position will be described. When the drive plate 48 is in the reference position, the longitudinal direction of the annular portion 49 extends in the Z direction perpendicular to the Y direction, and the upper long hole 51 of the annular portion 49 is positioned above the rotation center 47a, while the lower long hole 53 of the annular portion 49 is positioned below the rotation center 47a. As a result, the upper cam 52 engaged with the upper long hole 51 of the annular portion 49 and the lower cam 54 engaged with the lower long hole 53 of the annular portion 49 are positioned in a straight line with the rotation center 47a in the Z direction.
駆動板48が基準位置にある場合、図5に示すように、第1ローラ43及び第2ローラ44は、Z方向において直線上に対向配置され、ウェーハ27の端面27aまでのY方向での各距離が同じ距離となる。また、駆動板48が基準位置にある場合、研磨テープ33が張架される第1ローラ43の外周面から第2ローラ44の外周面までのZ方向(ウェーハ27の厚み方向)における距離は、ウェーハ27の厚みよりも小さく選定されている。すなわち、研磨テープ33が張架された状態で移送される第1ローラ43と第2ローラ44との間隙には、ウェーハ27の端面全体を配置させることができず、第1ローラ43及び第2ローラ44によりウェーハ27を厚み方向から挟み込めない構成となっている。
When the driving plate 48 is in the reference position, as shown in FIG. 5, the first roller 43 and the second roller 44 are arranged in a straight line facing each other in the Z direction, and the distances in the Y direction to the edge surface 27a of the wafer 27 are the same. Also, when the driving plate 48 is in the reference position, the distance in the Z direction (thickness direction of the wafer 27) from the outer circumferential surface of the first roller 43 on which the polishing tape 33 is stretched to the outer circumferential surface of the second roller 44 is selected to be smaller than the thickness of the wafer 27. In other words, the entire edge surface of the wafer 27 cannot be placed in the gap between the first roller 43 and the second roller 44, which are moved with the polishing tape 33 stretched, and the first roller 43 and the second roller 44 cannot pinch the wafer 27 in the thickness direction.
第1ローラ43及び第2ローラ44の間には、第1ローラ43及び第2ローラ44の間を移送する研磨テープ33を支持する背面パッド55が設けられている。背面パッド55は、金属製、もしくは樹脂製で断面略矩状の4面で作られており、4面のうちの1面の面部55bに研磨テープ33が接している。この場合、第1ローラ43及び第2ローラ44の間に設けられた背面パッド55は、ローラ群24の高さ方向(Z方向)での基準を示す基準線O上に配置される。
Between the first roller 43 and the second roller 44, a back pad 55 is provided to support the polishing tape 33 transported between the first roller 43 and the second roller 44. The back pad 55 is made of metal or resin and has four faces with a roughly rectangular cross section, with the polishing tape 33 contacting the surface portion 55b of one of the four faces. In this case, the back pad 55 provided between the first roller 43 and the second roller 44 is positioned on a reference line O that indicates the reference in the height direction (Z direction) of the roller group 24.
背面パッド55は、第1ローラ43及び第2ローラ44がウェーハ27の端面27aに近づく方向に移動することで、第1ローラ43及び第2ローラ44の間に移送する研磨テープ33を面部55bでウェーハ27の端面27aに押し付け、ウェーハ27の端面27aに対して面圧力を与える。背面パッド55は、4つの面のうちのいずれかの面を面部55bとして使用できる。例えば、所定期間を経過した際には、背面パッド55の軸55aを中心に略90度回転させ、研磨テープ33に接していた面とは異なる面を面部55bとして使用してもよい。
When the first roller 43 and the second roller 44 move in a direction approaching the edge surface 27a of the wafer 27, the rear pad 55 presses the polishing tape 33 transported between the first roller 43 and the second roller 44 against the edge surface 27a of the wafer 27 with the surface portion 55b, applying a surface pressure to the edge surface 27a of the wafer 27. The rear pad 55 can use any of its four surfaces as the surface portion 55b. For example, after a predetermined period of time has elapsed, the rear pad 55 can be rotated approximately 90 degrees around the axis 55a of the rear pad 55, and a surface other than the surface that was in contact with the polishing tape 33 can be used as the surface portion 55b.
第1ローラ43と第2ローラ44とは、長孔57を有した楕円環状の連係部56a,56bに連係している。連係部56a,56bは、X方向において対向配置されており、駆動板48が基準位置にあるとき、長孔57が延びる長手方向がZ方向に沿って配置される。本実施形態に係る連係部56a,56bの長孔57は、ウェーハ27の厚みよりも僅かに大きい長さに選定されている。連係部56aは、第1ローラ43と第2ローラ44と背面パッド55との一端が長孔57内に挿通され、第1ローラ43と第2ローラ44と背面パッド55の各一端の外周面にそれぞれ形成された溝部に、長孔57の枠部が嵌め込まれて位置決めされている。連係部56bは、第1ローラ43と第2ローラ44と背面パッド55との他端が長孔57内に挿通され、第1ローラ43と第2ローラ44と背面パッド55の各他端の外周面にそれぞれ形成された溝部に、長孔57の枠部が嵌め込まれて位置決めされている。
The first roller 43 and the second roller 44 are connected to elliptical annular linking parts 56a, 56b having a long hole 57. The linking parts 56a, 56b are arranged opposite each other in the X direction, and when the drive plate 48 is in the reference position, the longitudinal direction of the long hole 57 is arranged along the Z direction. The long holes 57 of the linking parts 56a, 56b in this embodiment are selected to have a length slightly greater than the thickness of the wafer 27. The linking part 56a is positioned by inserting one end of the first roller 43, the second roller 44, and the back pad 55 into the long hole 57, and fitting the frame of the long hole 57 into grooves formed on the outer circumferential surfaces of one end of the first roller 43, the second roller 44, and the back pad 55. The linking portion 56b is positioned by inserting the other ends of the first roller 43, the second roller 44, and the back pad 55 into the long hole 57, and fitting the frame of the long hole 57 into the grooves formed on the outer circumferential surfaces of the other ends of the first roller 43, the second roller 44, and the back pad 55.
連係部56a,56bには、第1ローラ43と第2ローラ44と背面パッド55とが長孔57内に回転可能に設けられているとともに、背面パッド55が長孔57の中間に位置決めされ、第1ローラ43と第2ローラ44とが長孔57内を長手方向に沿って移動可能に設けられている。連係部56a,56bは、第1ローラ43と第2ローラ44とがそれぞれ独立してウェーハ27の端面27aに近づく方向又は遠ざかる方向(Y方向)に移動する際に、第1ローラ43及び第2ローラ44を長孔57に沿ってガイドするとともに、長孔57により第1ローラ43及び第2ローラ44のY方向への移動量を規制する。
In the linking parts 56a and 56b, the first roller 43, the second roller 44, and the back pad 55 are rotatably arranged within the long hole 57, the back pad 55 is positioned in the middle of the long hole 57, and the first roller 43 and the second roller 44 are arranged to be movable along the longitudinal direction within the long hole 57. When the first roller 43 and the second roller 44 independently move toward or away from the end surface 27a of the wafer 27 (Y direction), the linking parts 56a and 56b guide the first roller 43 and the second roller 44 along the long hole 57, and the long hole 57 regulates the amount of movement of the first roller 43 and the second roller 44 in the Y direction.
上記構成の作用を説明する。図1に示すように、ウェーハ加工システム10は、移載機18が4個のカセット置き台11~14のいずれかから1枚のウェーハ27をアンロードして、当該ウェーハ27をウェーハ端面検査装置16にロードする。ウェーハ端面検査装置16にロードされたウェーハ27は、ウェーハ端面検査装置16により端面27aの形状が検査される。検査した端面形状のデータは、ウェーハ端面研磨装置17に送られる。そして、ウェーハ端面検査装置16で検査が終了したウェーハ27は、移載機18によりウェーハ端面検査装置16からアンロードされてウェーハ端面研磨装置17にロードされる。
The operation of the above configuration will be explained. As shown in FIG. 1, in the wafer processing system 10, the transfer machine 18 unloads one wafer 27 from one of the four cassette placement tables 11-14 and loads the wafer 27 into the wafer edge surface inspection device 16. The shape of the edge surface 27a of the wafer 27 loaded into the wafer edge surface inspection device 16 is inspected by the wafer edge surface inspection device 16. Data on the inspected edge surface shape is sent to the wafer edge surface polishing device 17. Then, after inspection by the wafer edge surface inspection device 16, the wafer 27 is unloaded from the wafer edge surface inspection device 16 by the transfer machine 18 and loaded into the wafer edge surface polishing device 17.
ウェーハ端面研磨装置17は、ウェーハ端面検査装置16で検査したウェーハ27の端面27aの形状のデータを取得しており、そのデータに基づいて、ウェーハ27の端面27aを最適な形状に形成するための研磨時におけるウェーハ27の高さ位置や、第1ローラ43及び第2ローラ44の接離状態等を決定する。ここで、ウェーハ27の端面27aの最適な形状とは、例えば、ウェーハ27の端面27aをウェーハ27の厚み方向において対称となる円弧状に仕上げるR形状である。なお、ウェーハ27の端面27aの最適な形状としては、R形状に限らず、厚み方向に非対象となる非対称形状としてもよい。
The wafer edge polishing device 17 acquires data on the shape of the edge 27a of the wafer 27 inspected by the wafer edge inspection device 16, and based on that data, determines the height position of the wafer 27 during polishing to form the edge 27a of the wafer 27 into an optimal shape, as well as the contact and separation state of the first roller 43 and the second roller 44. Here, the optimal shape of the edge 27a of the wafer 27 is, for example, an R-shape that finishes the edge 27a of the wafer 27 into an arc shape that is symmetrical in the thickness direction of the wafer 27. Note that the optimal shape of the edge 27a of the wafer 27 is not limited to an R-shape, and may be an asymmetric shape that is not symmetrical in the thickness direction.
第1ローラ43及び第2ローラ44の接離状態は、少なくとも第1研磨作業、第2研磨作業、及び第3研磨作業の3種類に分けられる。第1研磨作業では、図5に示したように、駆動板48を基準位置にして、第1ローラ43及び第2ローラ44を背面パッド55に近接させた状態で第1ローラ43及び第2ローラ44をZ方向において直線上に配置し、研磨テープ33をZ方向に沿って張架させた状態で連続して移送させ続ける。そして、第1研磨作業では、この状態のままベース板32がウェーハ27の端面27aに近づく方向へ移動することで、当該ベース板32とともに第1ローラ43及び第2ローラ44をウェーハ27の端面27aに近づく方向に移動させる。これにより、第1研磨作業では、第1ローラ43及び第2ローラ44の間に移送している研磨テープ33を、ウェーハ27の端面27aに押し付け、ウェーハ27の端面27aをZ方向に沿って垂直状に研磨することができる。
The contact and separation state of the first roller 43 and the second roller 44 can be divided into at least three types: a first polishing operation, a second polishing operation, and a third polishing operation. In the first polishing operation, as shown in FIG. 5, the driving plate 48 is set to the reference position, and the first roller 43 and the second roller 44 are arranged in a straight line in the Z direction with the first roller 43 and the second roller 44 in close proximity to the back pad 55, and the polishing tape 33 is continuously transported while stretched along the Z direction. In the first polishing operation, the base plate 32 moves in this state in a direction approaching the end surface 27a of the wafer 27, thereby moving the first roller 43 and the second roller 44 together with the base plate 32 in a direction approaching the end surface 27a of the wafer 27. As a result, in the first polishing operation, the polishing tape 33 transported between the first roller 43 and the second roller 44 is pressed against the end surface 27a of the wafer 27, and the end surface 27a of the wafer 27 can be polished vertically along the Z direction.
第2研磨作業では、図6及び図7に示すように、連係部56a,56bの上側が背面パッド55を中心にウェーハ27側に傾倒する。これにより、第2研磨作業では、連係部56a,56bの長孔57に沿って第1ローラ43が背面パッド55から遠ざかる方向に移動することにより、第1ローラ43をウェーハ27の端面27aに近づく方向に移動させ、かつ、連係部56a,56bの長孔57に沿って第2ローラ44が背面パッド55から遠ざかる方向に移動することにより、第2ローラ44をウェーハ27の端面27aから遠ざかる方向に移動させる。なお、第2研磨作業時における、ウェーハ27の厚み方向での第1ローラ43及び第2ローラ44の距離は、第1研磨作業時における、ウェーハ27の厚み方向での第1ローラ43及び第2ローラ44の距離と変わらないことから、ウェーハ27の厚み方向における第1ローラ43と第2ローラ44の間隙を広げることなく狭い状態を維持できる。
6 and 7, in the second polishing operation, the upper sides of the linking portions 56a, 56b are tilted toward the wafer 27 with the back pad 55 at the center. As a result, in the second polishing operation, the first roller 43 moves in a direction away from the back pad 55 along the long holes 57 of the linking portions 56a, 56b, thereby moving the first roller 43 in a direction approaching the edge surface 27a of the wafer 27, and the second roller 44 moves in a direction away from the back pad 55 along the long holes 57 of the linking portions 56a, 56b, thereby moving the second roller 44 in a direction away from the edge surface 27a of the wafer 27. In addition, the distance between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 during the second polishing operation is the same as the distance between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 during the first polishing operation, so the gap between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 can be kept narrow without widening.
これにより、第2研磨作業では、第1ローラ43及び第2ローラ44の間に張架された状態で連続して移送されている研磨テープ33が、上方から下方に向けて次第にウェーハ27の端面27aから遠ざかるように傾斜した状態となる。第2研磨作業では、この状態のままベース板32がウェーハ27の端面27aに近づく方向へ移動することで、当該ベース板32とともに第1ローラ43及び第2ローラ44をウェーハ27の端面27aに近づく方向に移動させる。これにより、第2研磨作業では、第1ローラ43及び第2ローラ44の間に傾斜した状態で連続して移送し続けている研磨テープ33を、回転するウェーハ27の端面27aの端面上角部周辺に押し付け、ウェーハ27の端面27aの端面上角部周辺を研磨することができる。
As a result, in the second polishing operation, the polishing tape 33, which is continuously transported while stretched between the first roller 43 and the second roller 44, is inclined from top to bottom so as to gradually move away from the edge surface 27a of the wafer 27. In the second polishing operation, the base plate 32 moves in a direction approaching the edge surface 27a of the wafer 27 while remaining in this state, thereby moving the first roller 43 and the second roller 44 together with the base plate 32 in a direction approaching the edge surface 27a of the wafer 27. As a result, in the second polishing operation, the polishing tape 33, which is continuously transported while inclined between the first roller 43 and the second roller 44, can be pressed against the periphery of the upper corner of the edge surface 27a of the rotating wafer 27, thereby polishing the periphery of the upper corner of the edge surface 27a of the wafer 27.
第3研磨作業では、図8及び図9に示すように、連係部56a,56bの下側が背面パッド55を中心にウェーハ27側に傾倒する。これにより、第3研磨作業では、連係部56a,56bの長孔57に沿って第2ローラ44が背面パッド55から遠ざかる方向に移動することにより、第2ローラ44をウェーハ27の端面27aに近づく方向に移動させ、かつ、連係部56a,56bの長孔57に沿って第1ローラ43が背面パッド55から遠ざかる方向に移動することにより、第1ローラ43をウェーハ27の端面27aから遠ざかる方向に移動させる。なお、第3研磨作業時における、ウェーハ27の厚み方向での第1ローラ43及び第2ローラ44の距離は、第1研磨作業時における、ウェーハ27の厚み方向での第1ローラ43及び第2ローラ44の距離と変わらないことから、ウェーハ27の厚み方向における第1ローラ43と第2ローラ44の間隙を広げることなく狭い状態を維持できる。
8 and 9, in the third polishing operation, the lower sides of the linking portions 56a, 56b are tilted toward the wafer 27 with the back pad 55 at the center. As a result, in the third polishing operation, the second roller 44 moves in a direction away from the back pad 55 along the long holes 57 of the linking portions 56a, 56b, thereby moving the second roller 44 in a direction approaching the edge surface 27a of the wafer 27, and the first roller 43 moves in a direction away from the back pad 55 along the long holes 57 of the linking portions 56a, 56b, thereby moving the first roller 43 in a direction away from the edge surface 27a of the wafer 27. In addition, the distance between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 during the third polishing operation is the same as the distance between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 during the first polishing operation, so the gap between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 can be kept narrow without widening.
これにより、第3研磨作業では、第1ローラ43及び第2ローラ44の間に張架された状態で連続して移送されている研磨テープ33が、下方から上方に向けて次第にウェーハ27の端面27aから遠ざかるように傾斜した状態となる。第3研磨作業では、この状態のままベース板32がウェーハ27の端面27aに近づく方向へ移動することで、当該ベース板32とともに第1ローラ43及び第2ローラ44をウェーハ27の端面27aに近づく方向に移動させる。これにより、第3研磨作業では、第1ローラ43及び第2ローラ44の間に傾斜した状態で連続して移送し続けている研磨テープ33を、ウェーハ27の端面27aの端面下角部周辺に押し付け、ウェーハ27の端面27aの端面下角部周辺を研磨することができる。
As a result, in the third polishing operation, the polishing tape 33, which is continuously transported while stretched between the first roller 43 and the second roller 44, is inclined from the bottom to the top so as to gradually move away from the edge surface 27a of the wafer 27. In the third polishing operation, the base plate 32 moves in a direction approaching the edge surface 27a of the wafer 27 while remaining in this state, thereby moving the first roller 43 and the second roller 44 together with the base plate 32 in a direction approaching the edge surface 27a of the wafer 27. As a result, in the third polishing operation, the polishing tape 33, which is continuously transported while inclined between the first roller 43 and the second roller 44, can be pressed against the periphery of the lower corner of the edge surface 27a of the wafer 27, and the periphery of the lower corner of the edge surface 27a of the wafer 27 can be polished.
かかる構成に加えて、ウェーハ端面研磨装置17は、第1研磨作業、第2研磨作業、及び第3研磨作業を行う際に、ウェーハ昇降機構23によって、ウェーハ回転機構22を介してウェーハ27を中心軸方向(Z方向)に向けて適宜移動させ、ウェーハ27の端面27aが研磨テープ33に摺接する位置を調整可能に構成されている。
In addition to this configuration, when performing the first polishing operation, the second polishing operation, and the third polishing operation, the wafer edge polishing device 17 is configured to appropriately move the wafer 27 in the central axis direction (Z direction) via the wafer rotation mechanism 22 by the wafer lifting mechanism 23, thereby making it possible to adjust the position where the edge surface 27a of the wafer 27 rubs against the polishing tape 33.
なお、研磨作業の順は、ウェーハ27の端面27aの形状に応じて決められる。研磨作業の順は、例えば第1研磨作業、第2研磨作業、及び第3研磨作業としてもよい。なお、研磨作業の順は、前述した順に限らず、例えば第2研磨作業と第3研磨作業とを逆にしてもよい。このような第1研磨作業、第2研磨作業及び/又は第3研磨作業を行う際には、ウェーハ回転機構22でウェーハ27を周方向に適宜回転させて、第1ローラ43及び第2ローラ44の間で移送する研磨テープ33が、ウェーハ27の端面27aに摺接する周方向位置を変えながら、当該ウェーハ27の端面27aを研磨テープ33で研磨する。
The order of the polishing operations is determined according to the shape of the end surface 27a of the wafer 27. The order of the polishing operations may be, for example, the first polishing operation, the second polishing operation, and the third polishing operation. The order of the polishing operations is not limited to the above-mentioned order, and for example, the second polishing operation and the third polishing operation may be reversed. When performing such a first polishing operation, second polishing operation, and/or third polishing operation, the wafer 27 is rotated appropriately in the circumferential direction by the wafer rotation mechanism 22, and the polishing tape 33 transported between the first roller 43 and the second roller 44 polishes the end surface 27a of the wafer 27 with the polishing tape 33 while changing the circumferential position at which the polishing tape 33 slides against the end surface 27a of the wafer 27.
ウェーハ端面研磨装置17では、ウェーハ端面検査装置16により得られたウェーハ27の端面27aの形状の検査結果に基づいて、ウェーハ27ごとに研磨テープ33の傾斜角度だけでなく、ウェーハ27の高さ位置についても決定され、上述した第1研磨作業、第2研磨作業及び/又は第3研磨作業が開始される。
In the wafer edge polishing device 17, based on the inspection results of the shape of the edge 27a of the wafer 27 obtained by the wafer edge inspection device 16, not only the inclination angle of the polishing tape 33 for each wafer 27 but also the height position of the wafer 27 is determined, and the first polishing operation, the second polishing operation, and/or the third polishing operation described above is started.
例えば、第1研磨作業では、図5に示すように、ウェーハ27の厚みの中間位置27bが、第1ローラ43及び第2ローラ44の中間位置に設けられた背面パッド55を通る基準線Oと同じ高さ位置になるように、ウェーハ昇降機構23によってウェーハ27を中心軸方向(Z方向)に移動させる。そして、第1研磨作業では、駆動板48を基準位置に設定して第1ローラ43及び第2ローラ44をZ方向に直線上に配置させた状態で、ベース板32をウェーハ27の端面27aに近づく方向に移動させる。これにより、第1研磨作業では、第1ローラ43及び第2ローラ44に垂直に移送している研磨テープ33を、ウェーハ回転機構22で支持されているウェーハ27の端面27aに押し付け、ウェーハ27の端面27aの形状がZ方向に沿った垂直面状になるように研磨することができる。
For example, in the first polishing operation, as shown in FIG. 5, the wafer 27 is moved in the central axis direction (Z direction) by the wafer lifting mechanism 23 so that the intermediate position 27b of the thickness of the wafer 27 is at the same height as the reference line O passing through the back pad 55 provided at the intermediate position between the first roller 43 and the second roller 44. Then, in the first polishing operation, the drive plate 48 is set to the reference position and the first roller 43 and the second roller 44 are arranged in a straight line in the Z direction, and the base plate 32 is moved in a direction approaching the end surface 27a of the wafer 27. As a result, in the first polishing operation, the polishing tape 33 being transferred perpendicularly to the first roller 43 and the second roller 44 is pressed against the end surface 27a of the wafer 27 supported by the wafer rotating mechanism 22, and the end surface 27a of the wafer 27 can be polished so that its shape is a vertical surface along the Z direction.
第2研磨作業では、図7に示すように、ウェーハ27の厚みの中間位置27bが、背面パッド55を通る基準線Oよりも下方の高さ位置になるように、ウェーハ昇降機構23によってウェーハ27を中心軸方向(Z方向)に下降させる。そして、第2研磨作業では、図6に示すように、駆動板48を反時計方向に回転させることにより、回転板47及び環状部49を反時計方向に回転させる。上側移動板45は、環状部49の上長孔51に設けられた上カム52が、反時計方向に回転する環状部49に連動してウェーハ27の端面27aに近づく方向に向けて押される。これにより、上側移動板45の先端側に設けられた第1ローラ43は、上側移動板45に連動してウェーハ27の端面27aに近づく方向に移動する。一方、下側移動板46は、環状部49が反時計方向に回転した際に、環状部49の下長孔53に設けられた下カム54が、反時計方向に回転する環状部49に連動してウェーハ27の端面27aから遠ざかる方向に向けて引かれる。下側移動板46の先端側に設けられた第2ローラ44は、下側移動板46に連動してウェーハ27の端面27aから遠ざかる方向に移動する。
In the second polishing operation, as shown in FIG. 7, the wafer 27 is lowered in the central axis direction (Z direction) by the wafer lifting mechanism 23 so that the intermediate position 27b of the thickness of the wafer 27 is at a height position below the reference line O passing through the back pad 55. Then, in the second polishing operation, as shown in FIG. 6, the drive plate 48 is rotated counterclockwise to rotate the rotating plate 47 and the annular portion 49 counterclockwise. The upper cam 52 of the upper moving plate 45 provided in the upper long hole 51 of the annular portion 49 is pushed in a direction approaching the end surface 27a of the wafer 27 in conjunction with the annular portion 49 rotating counterclockwise. As a result, the first roller 43 provided on the tip side of the upper moving plate 45 moves in a direction approaching the end surface 27a of the wafer 27 in conjunction with the upper moving plate 45. On the other hand, when the annular portion 49 of the lower moving plate 46 rotates counterclockwise, the lower cam 54 provided in the lower long hole 53 of the annular portion 49 is pulled in a direction away from the end surface 27a of the wafer 27 in conjunction with the annular portion 49 rotating counterclockwise. The second roller 44 provided on the tip side of the lower moving plate 46 moves in a direction away from the end surface 27a of the wafer 27 in conjunction with the lower moving plate 46.
これにより、図7に示すように、第1ローラ43及び第2ローラ44の間に張架されて連続して移送されている研磨テープ33は、ウェーハ27の端面27aに対して上側が近づき下側が遠ざかるように傾斜した状態となる。このとき、反時計回りに回転した連係部56a,56bの回転中心に固定された背面パッド55は、研磨テープ33の傾斜に合わせて、連係部56a,56bとともに軸55aを中心に反時計回りに回転し、研磨テープ33の面に面部55bを押し当てた状態を維持する。これにより、背面パッド55は、研磨テープ33をウェーハ27の端面27aに押し付けた際に当該端面27aから研磨テープ33に与えられる負荷を受け止める。
As a result, as shown in FIG. 7, the polishing tape 33, which is stretched between the first roller 43 and the second roller 44 and continuously transported, is inclined so that the upper side approaches the edge surface 27a of the wafer 27 and the lower side moves away from it. At this time, the back pad 55, which is fixed to the center of rotation of the linking parts 56a, 56b that have rotated counterclockwise, rotates counterclockwise around the axis 55a together with the linking parts 56a, 56b in accordance with the inclination of the polishing tape 33, and maintains a state in which the surface part 55b is pressed against the surface of the polishing tape 33. As a result, the back pad 55 receives the load applied to the polishing tape 33 from the edge surface 27a of the wafer 27 when the polishing tape 33 is pressed against the edge surface 27a of the wafer 27.
第2研磨作業では、ウェーハ27の厚みの中間位置27bが、背面パッド55を通る基準線Oよりも下方の高さ位置に設定され、かつ、第1ローラ43及び第2ローラ44の間を連続して移送している研磨テープ33をウェーハ27の端面27aに対して上側を近づけ下側を遠ざけるように傾斜させた状態で、ベース板32をウェーハ27の端面27aに近づく方向に移動させる。これにより、第2研磨作業では、第1ローラ43及び第2ローラ44に傾斜した状態で連続して移送している研磨テープ33を、ウェーハ回転機構22で支持されているウェーハ27の端面27aの端面上角部に押し付けることができ、ウェーハ27の端面上角部の形状を湾曲したR形状になるように研磨することができる。
In the second polishing operation, the intermediate position 27b of the thickness of the wafer 27 is set at a height position below the reference line O passing through the back pad 55, and the polishing tape 33, which is continuously transported between the first roller 43 and the second roller 44, is tilted so that the upper side approaches the end surface 27a of the wafer 27 and the lower side moves away from it, and the base plate 32 is moved in a direction approaching the end surface 27a of the wafer 27. As a result, in the second polishing operation, the polishing tape 33, which is continuously transported while tilted between the first roller 43 and the second roller 44, can be pressed against the upper corner of the end surface 27a of the wafer 27 supported by the wafer rotation mechanism 22, and the shape of the upper corner of the end surface of the wafer 27 can be polished to a curved R shape.
第3研磨作業では、図9に示すように、ウェーハ27の厚みの中間位置27bが、背面パッド55を通る基準線Oよりも上方の高さ位置になるように、ウェーハ昇降機構23によってウェーハ27を中心軸方向(Z方向)に上昇させる。そして、第3研磨作業では、図8に示すように、駆動板48を時計方向に回転させることにより、回転板47及び環状部49を時計方向に回転させる。上側移動板45は、環状部49の上長孔51に設けられた上カム52が、時計方向に回転する環状部49に連動してウェーハ27の端面27aから遠ざかる方向に移動する。一方、下側移動板46は、環状部49が時計方向に回転した際に、環状部49の下長孔53に設けられた下カム54が、時計方向に回転する環状部49に連動してウェーハ27の端面27aに近づく方向に向けて移動する。下側移動板46の先端側に設けられた第2ローラ44は、下側移動板46に連動してウェーハ27の端面27aに近づく方向に移動する。
In the third polishing operation, as shown in FIG. 9, the wafer 27 is raised in the central axis direction (Z direction) by the wafer lifting mechanism 23 so that the intermediate position 27b of the thickness of the wafer 27 is at a height position above the reference line O passing through the back pad 55. Then, in the third polishing operation, as shown in FIG. 8, the drive plate 48 is rotated clockwise to rotate the rotating plate 47 and the annular portion 49 clockwise. The upper moving plate 45 moves in a direction away from the end surface 27a of the wafer 27 in conjunction with the annular portion 49 rotating clockwise, with the upper cam 52 provided in the upper long hole 51 of the annular portion 49. On the other hand, when the annular portion 49 rotates clockwise, the lower moving plate 46 moves in a direction approaching the end surface 27a of the wafer 27 in conjunction with the annular portion 49 rotating clockwise, with the lower cam 54 provided in the lower long hole 53 of the annular portion 49. The second roller 44, which is provided at the tip side of the lower moving plate 46, moves in conjunction with the lower moving plate 46 in a direction approaching the edge surface 27a of the wafer 27.
これにより、図9に示すように、第1ローラ43及び第2ローラ44の間に張架されて連続して移送されている研磨テープ33は、ウェーハ27の端面27aに対して下側が近づき上側が遠ざかるように傾斜した状態となる。このとき、時計回りに回転した連係部56a,56bの回転中心に固定された背面パッド55は、研磨テープ33の傾斜に合わせて、連係部56a,56bとともに軸55aを中心に回転し、研磨テープ33の面に面部55bを押し当てた状態を維持する。これにより、背面パッド55は、研磨テープ33をウェーハ27の端面27aに押し付けた際に当該端面27aから研磨テープ33に与えられる負荷を受け止める。
As a result, as shown in FIG. 9, the polishing tape 33, which is stretched between the first roller 43 and the second roller 44 and continuously transported, is inclined so that the lower side approaches the edge surface 27a of the wafer 27 and the upper side moves away from it. At this time, the back pad 55, which is fixed to the center of rotation of the linking parts 56a, 56b that rotate clockwise, rotates around the axis 55a together with the linking parts 56a, 56b in accordance with the inclination of the polishing tape 33, and maintains a state in which the surface part 55b is pressed against the surface of the polishing tape 33. As a result, the back pad 55 receives the load applied to the polishing tape 33 from the edge surface 27a of the wafer 27 when the polishing tape 33 is pressed against the edge surface 27a of the wafer 27.
第3研磨作業では、ウェーハ27の厚みの中間位置27bが、背面パッド55を通る基準線Oよりも上方の高さ位置に設定され、かつ、第1ローラ43及び第2ローラ44の間で連続して移送している研磨テープ33をウェーハ27の端面27aに対して下側を近づけ上側を遠ざけるように傾斜させた状態で、ベース板32をウェーハ27の端面27aに近づく方向に移動させる。これにより、第3研磨作業では、第1ローラ43及び第2ローラ44に傾斜した状態で連続して移送している研磨テープ33を、ウェーハ回転機構22で支持されているウェーハ27の端面27aの端面下角部に押し付けることができ、ウェーハ27の端面下角部の形状を湾曲したR形状になるように研磨することができる。
In the third polishing operation, the intermediate position 27b of the thickness of the wafer 27 is set at a height position above the reference line O passing through the back pad 55, and the polishing tape 33 being continuously transported between the first roller 43 and the second roller 44 is tilted so that the lower side approaches the end face 27a of the wafer 27 and the upper side moves away from it, and the base plate 32 is moved in a direction approaching the end face 27a of the wafer 27. As a result, in the third polishing operation, the polishing tape 33 being continuously transported in an inclined state between the first roller 43 and the second roller 44 can be pressed against the lower corner of the end face 27a of the wafer 27 supported by the wafer rotation mechanism 22, and the shape of the lower corner of the end face of the wafer 27 can be polished to a curved R shape.
以上の構成において、ウェーハ端面研磨装置17は、ウェーハ回転機構22によってウェーハ27を支持し、ローラ移動機構25によって第1ローラ43及び第2ローラ44の両方又はいずれか一方を、ウェーハ回転機構22により支持されているウェーハ27の端面27aに近づく方向に移動させ、第1ローラ43及び第2ローラ44の間に連続して移送され続けている研磨テープ33によって当該ウェーハ27の端面27aを研磨する。この際、ウェーハ端面研磨装置17は、ウェーハ昇降機構23によって、ウェーハ回転機構22により支持されたウェーハ27を中心軸方向に昇降させることにより、ウェーハ27の厚み方向で研磨テープ33が接する、ウェーハ27の端面27aの位置を変更させる。
In the above configuration, the wafer edge polishing device 17 supports the wafer 27 with the wafer rotation mechanism 22, and uses the roller movement mechanism 25 to move both or either of the first roller 43 and the second roller 44 in a direction approaching the edge surface 27a of the wafer 27 supported by the wafer rotation mechanism 22, and polishes the edge surface 27a of the wafer 27 with the polishing tape 33 that is continuously transported between the first roller 43 and the second roller 44. At this time, the wafer edge polishing device 17 uses the wafer lifting mechanism 23 to raise and lower the wafer 27 supported by the wafer rotation mechanism 22 in the central axis direction, thereby changing the position of the edge surface 27a of the wafer 27 that contacts the polishing tape 33 in the thickness direction of the wafer 27.
このように、ウェーハ端面研磨装置17では、第1ローラ43及び第2ローラ44の各々が独立してウェーハ27の端面27aに近づく方向にそれぞれ移動し、研磨テープ33の傾斜角度を変えることができることに加えて、ウェーハ昇降機構23によってウェーハ27を中心軸方向に移動させることができるので、研磨テープ33の傾斜角度を調整してウェーハ27の端面27aに研磨テープ33が接する位置を変更できるとともに、中心軸方向に沿ってウェーハ27の端面27aの高さ位置を変えることでもウェーハ27の端面27aに研磨テープ33が接する位置を変更できる。このため、研磨テープ33が移送する第1ローラ43と第2ローラ44との間にウェーハ27の端面全体を必ずしも配置しなくても、ウェーハ27の端面27aの高さ位置を適宜変えることでウェーハ27の端面全体を研磨することができ、よって、ウェーハ27の厚み方向における第1ローラ43と第2ローラ44との間隙を従来よりも小さくしても、ウェーハ27の端面27aを適切な形状に形成することができる。
In this way, in the wafer edge polishing apparatus 17, the first roller 43 and the second roller 44 each move independently in a direction approaching the edge face 27a of the wafer 27, thereby changing the inclination angle of the polishing tape 33. In addition, the wafer 27 can be moved in the central axis direction by the wafer lifting mechanism 23. Therefore, by adjusting the inclination angle of the polishing tape 33, the position at which the polishing tape 33 contacts the edge face 27a of the wafer 27 can be changed, and the position at which the polishing tape 33 contacts the edge face 27a of the wafer 27 can also be changed by changing the height position of the edge face 27a of the wafer 27 along the central axis direction. Therefore, even if the entire end surface of the wafer 27 is not necessarily positioned between the first roller 43 and the second roller 44 on which the polishing tape 33 is transported, the entire end surface of the wafer 27 can be polished by appropriately changing the height position of the end surface 27a of the wafer 27. Therefore, even if the gap between the first roller 43 and the second roller 44 in the thickness direction of the wafer 27 is made smaller than before, the end surface 27a of the wafer 27 can be formed into an appropriate shape.
なお、上述した実施形態においては、第1研磨作業として、ウェーハ27の厚みの中間位置27bが、第1ローラ43及び第2ローラ44の中間位置に設けられた背面パッド55を通る基準線Oと同じ高さ位置になるように、ウェーハ昇降機構23によってウェーハ27を中心軸方向(Z方向)に移動させ、ウェーハ27の厚み方向に張架させた研磨テープ33によりウェーハ27の端面27aを研磨する場合について述べたが、本発明はこれに限らない。例えば、第1研磨作業として、ウェーハ昇降機構23によって、図7に示すように、ウェーハ27の厚みの中間位置27bを、背面パッド55を通る基準線Oよりも下方の高さ位置としたり、図9に示すように、ウェーハ27の厚みの中間位置27bを、背面パッド55を通る基準線Oよりも上方の高さ位置としたりし(図9)、ウェーハ27の厚み方向に張架させた研磨テープ33によりウェーハ27の端面27aを研磨するようにしてもよい。
In the above embodiment, the first polishing operation is performed by moving the wafer 27 in the central axis direction (Z direction) using the wafer lifting mechanism 23 so that the intermediate position 27b of the thickness of the wafer 27 is at the same height as the reference line O passing through the back pad 55 provided at the intermediate position between the first roller 43 and the second roller 44, and the end surface 27a of the wafer 27 is polished with the polishing tape 33 stretched in the thickness direction of the wafer 27. However, the present invention is not limited to this. For example, the first polishing operation may be performed by using the wafer lifting mechanism 23 to move the intermediate position 27b of the thickness of the wafer 27 to a height position below the reference line O passing through the back pad 55 as shown in FIG. 7, or to move the intermediate position 27b of the thickness of the wafer 27 to a height position above the reference line O passing through the back pad 55 as shown in FIG. 9 (FIG. 9), and the end surface 27a of the wafer 27 may be polished with the polishing tape 33 stretched in the thickness direction of the wafer 27.
また、上述した実施形態においては、第1研磨作業、第2研磨作業及び第3研磨作業を明確に区分けして説明したが、本発明はこれに限らず、例えば、ウェーハ27の端面27aに研磨テープ33を摺接させたまま、第1研磨作業の状態から第2研磨作業の状態、第2研磨作業の状態から第1研磨作業の状態、第1研磨作業の状態から第3研磨作業の状態、第3研磨作業の状態から第1研磨作業の状態等、各状態に次第に切り替わるように、ウェーハ27の端面27aに研磨テープ33を摺接させたまま、ウェーハ27の高さ位置と研磨テープ33の傾斜角度を連続的に変化させるようにしてもよい。
In addition, in the above-mentioned embodiment, the first polishing operation, the second polishing operation, and the third polishing operation are clearly separated and described, but the present invention is not limited to this. For example, while the polishing tape 33 is kept in sliding contact with the end surface 27a of the wafer 27, the height position of the wafer 27 and the inclination angle of the polishing tape 33 may be continuously changed so as to gradually switch between each state, such as from the first polishing operation state to the second polishing operation state, from the second polishing operation state to the first polishing operation state, from the first polishing operation state to the third polishing operation state, and from the third polishing operation state to the first polishing operation state, while keeping the polishing tape 33 in sliding contact with the end surface 27a of the wafer 27.
さらに、背面パッド55としては、断面矩形のものに限らず、例えば、図10に示すように、板状の背面パッド58を使用してもよい。図10に示すように、第1ローラ43及び第2ローラ44の間には、板状の背面パッド58が設けられている。図10に示すローラ移動機構25は、一対の第1ローラ43及び第2ローラ44と、一対の第1ローラ43a及び第2ローラ44aと、環状部59,59aと、を備えている。
Furthermore, the back pad 55 is not limited to one having a rectangular cross section, and for example, a plate-shaped back pad 58 may be used as shown in FIG. 10. As shown in FIG. 10, a plate-shaped back pad 58 is provided between the first roller 43 and the second roller 44. The roller movement mechanism 25 shown in FIG. 10 includes a pair of the first roller 43 and the second roller 44, a pair of the first roller 43a and the second roller 44a, and annular portions 59, 59a.
環状部59は、長手方向を有した楕円形状の環状体であり、第1ローラ43及び第2ローラ44が長手方向の両端に各々設けられている。また、環状部59は、長手方向の中心に回転軸60を有しており、Y方向及びZ方向を含むYZ面において、回転軸60を中心に時計回り又は反時計回りに回転自在にベース板32(図3)に支持されている。また、環状部59aも環状部59と同様に、長手方向を有した楕円形状の環状体であり、第1ローラ43a及び第2ローラ44aが長手方向の両端に各々設けられている。また、環状部59aは、長手方向の中心に回転軸60aを有しており、Y方向及びZ方向を含むYZ面において、回転軸60aを中心に時計回り又は反時計回りに回転自在にベース板32(図3)に支持されている。
The annular portion 59 is an elliptical ring having a longitudinal direction, and the first roller 43 and the second roller 44 are provided at both ends in the longitudinal direction. The annular portion 59 has a rotation axis 60 at its longitudinal center, and is supported by the base plate 32 (FIG. 3) so as to be rotatable clockwise or counterclockwise around the rotation axis 60 in the YZ plane including the Y and Z directions. The annular portion 59a is also an elliptical ring having a longitudinal direction, like the annular portion 59, and the first roller 43a and the second roller 44a are provided at both ends in the longitudinal direction. The annular portion 59a has a rotation axis 60a at its longitudinal center, and is supported by the base plate 32 (FIG. 3) so as to be rotatable clockwise or counterclockwise around the rotation axis 60a in the YZ plane including the Y and Z directions.
環状部59,59aは、図示しない駆動部によって、回転軸60,60aを中心に反時計回り又は時計回りに回転され、第1ローラ43,43a及び第2ローラ44,44aの各々を、独立してウェーハ27の端面27aに近づく方向又は遠ざかる方向に移動させる。具体的には、環状部59,59aが回転軸60,60aを中心に反時計回りに回転すると、第1ローラ43,43aがウェーハ27の端面27aに近づく方向に移動するとともに、第2ローラ44,44aがウェーハ27の端面27aから遠ざかる方向に移動する。また、環状部59,59aが回転軸60,60aを中心に時計回りに回転すると、第1ローラ43,43aがウェーハ27の端面27aから遠ざかる方向に移動するとともに、第2ローラ44,44aがウェーハ27の端面27aに近づく方向に移動する。これにより、上述した実施形態と同様にして、第1ローラ43及び第2ローラ44の間に張架されて連続して移送している研磨テープ33を、Z方向に沿って垂直状に配置させたり、又は、所定の傾斜角度で傾斜させることができる。この際、背面パッド58は、環状部59の傾斜に連動して同じに傾斜し、研磨テープ33の背後で当該研磨テープ33を支持する。
The annular parts 59, 59a are rotated counterclockwise or clockwise around the rotation shafts 60, 60a by a drive unit (not shown), which moves the first rollers 43, 43a and the second rollers 44, 44a independently toward or away from the end face 27a of the wafer 27. Specifically, when the annular parts 59, 59a rotate counterclockwise around the rotation shafts 60, 60a, the first rollers 43, 43a move toward the end face 27a of the wafer 27, and the second rollers 44, 44a move away from the end face 27a of the wafer 27. When the annular parts 59, 59a rotate clockwise around the rotation shafts 60, 60a, the first rollers 43, 43a move away from the end face 27a of the wafer 27, and the second rollers 44, 44a move toward the end face 27a of the wafer 27. As a result, in the same manner as in the above-described embodiment, the polishing tape 33, which is stretched between the first roller 43 and the second roller 44 and is continuously transported, can be arranged vertically along the Z direction or tilted at a predetermined tilt angle. At this time, the back pad 58 tilts in the same manner in conjunction with the tilt of the annular portion 59, and supports the polishing tape 33 behind the polishing tape 33.
また、上述した実施形態においては、1種類の研磨テープ33を使用してウェーハ27の端面27aを研磨するウェーハ端面研磨装置17について説明したが、本発明はこれに限らず、例えば、粗さが異なる2種類や3種類等、異なる粗さの複数種類の研磨テープを適宜切り替えて、ウェーハ27の端面27aを研磨するウェーハ端面研磨装置62を適用してもよい。
In the above-described embodiment, the wafer edge polishing device 17 is described as using one type of polishing tape 33 to polish the edge surface 27a of the wafer 27, but the present invention is not limited to this. For example, a wafer edge polishing device 62 may be applied that polishes the edge surface 27a of the wafer 27 by appropriately switching between multiple types of polishing tapes with different roughness, such as two or three types with different roughness.
図11に示すように、ウェーハ端面研磨装置62は、粗さの異なる2種類の第1研磨テープ63及び第2研磨テープ64を切り替えるテープ切替機構65を備えている。第1研磨テープ63は、研磨材の粒度が所定の粒度であり、第2研磨テープ64は、研磨材の粒度が第1研磨テープ63と異なっており、例えば、当該第1研磨テープ63の粒度よりも細かい粒度の研磨材を使用している。
As shown in FIG. 11, the wafer edge polishing device 62 is equipped with a tape switching mechanism 65 that switches between two types of polishing tape with different roughness: a first polishing tape 63 and a second polishing tape 64. The first polishing tape 63 has a predetermined grain size of abrasive, and the second polishing tape 64 has a different grain size of abrasive from that of the first polishing tape 63, for example, using an abrasive with a finer grain size than that of the first polishing tape 63.
ウェーハ端面研磨装置62は、テープ切替機構65以外に、第1ローラ群66と、第1ローラ群66に併設された第2ローラ群67と、第1テープ移送機構68と第2テープ移送機構69とを備える。なお、図11には図示していないが、上述した実施形態と同様に、ウェーハ回転機構22,ウェーハ昇降機構23,及びローラ移動機構25等についても備えている。
In addition to the tape switching mechanism 65, the wafer edge polishing device 62 also includes a first roller group 66, a second roller group 67 arranged next to the first roller group 66, a first tape transfer mechanism 68, and a second tape transfer mechanism 69. Although not shown in FIG. 11, the device also includes a wafer rotation mechanism 22, a wafer lifting mechanism 23, and a roller movement mechanism 25, as in the above-mentioned embodiment.
第1ローラ群66は、ウェーハ27の厚み方向(Z方向)に対向配置された第1ローラ66a及び第2ローラ66bを有し、第1テープ移送機構68から移送された第1研磨テープ63が、第1ローラ66a及び第2ローラ66bとの間に張架された状態で連続して移送される構成を有する。第2ローラ群67は、ウェーハ27の厚み方向(Z方向)に対向配置された第3ローラ67a及び第4ローラ67bを有し、第2テープ移送機構69から移送された第2研磨テープ64が、第3ローラ67a及び第4ローラ67bとの間に張架された状態で連続して移送される構成を有する。この実施形態では、第1ローラ66a、第2ローラ66b、第3ローラ67a及び第4ローラ67bの回転軸方向に、第1研磨テープ63と第2研磨テープ64とが並置されている。
The first roller group 66 has a first roller 66a and a second roller 66b arranged opposite each other in the thickness direction (Z direction) of the wafer 27, and the first polishing tape 63 transferred from the first tape transfer mechanism 68 is continuously transferred in a state in which it is stretched between the first roller 66a and the second roller 66b. The second roller group 67 has a third roller 67a and a fourth roller 67b arranged opposite each other in the thickness direction (Z direction) of the wafer 27, and the second polishing tape 64 transferred from the second tape transfer mechanism 69 is continuously transferred in a state in which it is stretched between the third roller 67a and the fourth roller 67b. In this embodiment, the first polishing tape 63 and the second polishing tape 64 are arranged side by side in the direction of the rotation axis of the first roller 66a, the second roller 66b, the third roller 67a, and the fourth roller 67b.
テープ切替機構65は、例えば、第1ローラ群66及び第1テープ移送機構68と、第2ローラ群67及び第2テープ移送機構69とが設けられるベース板32(図3)を、XY面においてウェーハ27の端面27aの接線方向(X方向)に移動可能に構成されている。テープ切替機構65は、ベース板32をウェーハ27の端面27aの接線方向(X方向)に相対的に移動させることにより、第1ローラ群66及び第2ローラ群67のうちのいずれか一方をウェーハ27の端面27aに対向するように位置決めし、ウェーハ27の端面27aに摺接させる研磨テープを第1研磨テープ63又は第2研磨テープ64のいずれかに切り替える。
The tape switching mechanism 65 is configured to be able to move the base plate 32 (FIG. 3), on which the first roller group 66 and first tape transport mechanism 68, and the second roller group 67 and second tape transport mechanism 69 are provided, in the tangential direction (X direction) of the end surface 27a of the wafer 27 on the XY plane. The tape switching mechanism 65 positions either the first roller group 66 or the second roller group 67 to face the end surface 27a of the wafer 27 by relatively moving the base plate 32 in the tangential direction (X direction) of the end surface 27a of the wafer 27, and switches the polishing tape that is in sliding contact with the end surface 27a of the wafer 27 to either the first polishing tape 63 or the second polishing tape 64.
ウェーハ27の端面27aを研磨する際の、第1ローラ群66及び第2ローラ群67の動作や、第1研磨テープ63及び第2研磨テープ64の傾斜角度の調整、研磨作業時のウェーハ昇降機構23によるウェーハ27の昇降動作等については、上述した実施形態と同様であるため、ここではその説明は省略する。また、テープ切替機構65は、ベース板32を移動させることなく、ウェーハ回転機構22により回転されているウェーハ27を接線方向に移動させるようにしてもよい。
The operation of the first roller group 66 and the second roller group 67 when polishing the end surface 27a of the wafer 27, the adjustment of the inclination angle of the first polishing tape 63 and the second polishing tape 64, and the lifting and lowering operation of the wafer 27 by the wafer lifting mechanism 23 during the polishing operation are the same as those in the above-mentioned embodiment, so a description thereof will be omitted here. In addition, the tape switching mechanism 65 may be configured to move the wafer 27 rotated by the wafer rotation mechanism 22 in the tangential direction without moving the base plate 32.
この発明は、以上説明した実施例に限定されるものではなく、多くの変形がこの発明の技術的思想内で当分野において通常の知識を有する者により可能である。例えばローラ移動機構25としては、図3で説明した構成に限らず、周知の構成であってよい。また、背面パッド55,58は、金属製や樹脂製に限らず、カーボン、非鉄金属、及び木等の周知の材料で作られたものであってもよい。
This invention is not limited to the embodiments described above, and many modifications are possible within the technical concept of this invention by a person of ordinary skill in the art. For example, the roller movement mechanism 25 is not limited to the configuration described in FIG. 3, but may have a well-known configuration. Furthermore, the back pads 55, 58 are not limited to being made of metal or resin, but may be made of well-known materials such as carbon, non-ferrous metals, and wood.
また、図10で説明した板状の背面パッド58の場合には、研磨テープ33が当たるパッド側とは逆の背面に、熱を逃がすためのヒートシンク、放熱フィン、及び放熱シート等の放熱部材を設けてもよい。ヒートシンクは、複数のフィン形状を有しており、熱を吸収し空気中に放熱する。ヒートシンクとしては、熱伝導性が良いことから、銅やアルミニウムを使用するのが望ましい。
Furthermore, in the case of the plate-shaped back pad 58 described in FIG. 10, a heat sink, heat dissipation fins, heat dissipation sheet, or other heat dissipation member for dissipating heat may be provided on the back surface opposite the pad side that contacts the polishing tape 33. The heat sink has multiple fins and absorbs heat and dissipates it into the air. It is preferable to use copper or aluminum as the heat sink because of their good thermal conductivity.
また、上述した実施形態においては、単にベース板32をウェーハ27の端面27aに近づく方向又は遠ざかる方向(Y方向)に移動することにより、第1ローラ43a及び第2ローラ44aをウェーハ27の端面27aに近づく方向及び遠ざかる方向に移動させるようにした構成について説明したが、本発明はこれに限らず、例えば、図12に示すように、ロードセンサ等の荷重センサ76を設けたベース板32をベース板支持部32aにリニアガイド(図示せず)を介して設け、これらベース板支持部32a及びベース板32をウェーハ27の端面27aに近づく方向又は遠ざかる方向(Y方向)に移動することにより、第1ローラ43a及び第2ローラ44aをウェーハ27の端面27aに近づく方向及び遠ざかる方向に移動させるようにしてもよい。
In the above embodiment, the first roller 43a and the second roller 44a are moved toward and away from the end surface 27a of the wafer 27 simply by moving the base plate 32 toward or away from the end surface 27a of the wafer 27 (Y direction). However, the present invention is not limited to this. For example, as shown in FIG. 12, the base plate 32 having a load sensor 76 such as a load sensor may be attached to the base plate support portion 32a via a linear guide (not shown), and the base plate support portion 32a and the base plate 32 may be moved toward or away from the end surface 27a of the wafer 27 (Y direction) to move the first roller 43a and the second roller 44a toward and away from the end surface 27a of the wafer 27.
この場合、図12に示すように、上側移動板45及び下側移動板46との間には、上側移動板45及び下側移動板46の長手方向に並走した長板状又は長棒状のセンサ支持部75を有している。センサ支持部75の先端には、X方向に対向配置された、長孔57を有した楕円環状の連係部56a,56bが設けられており、センサ支持部75の先端は、当該連係部56a,56bの中央部に回動自在に設けられている。荷重センサ76は、第1ローラ43a及び第2ローラ44aの間に張架された研磨テープ33をウェーハ27の端面27aに接触させた際にウェーハ27から研磨テープ33に作用する荷重を検出する。ベース板32に設けたリニアガイドは、荷重センサ76の検出結果に基づいてベース板32をウェーハ27から遠ざかる方向Y2に移動させ、ウェーハ27に対する研磨テープ33の接触力を調整し得る。
In this case, as shown in FIG. 12, between the upper moving plate 45 and the lower moving plate 46, there is a long plate-like or long rod-like sensor support part 75 running in parallel in the longitudinal direction of the upper moving plate 45 and the lower moving plate 46. At the tip of the sensor support part 75, elliptical ring-shaped linking parts 56a, 56b having long holes 57 arranged opposite to each other in the X direction are provided, and the tip of the sensor support part 75 is rotatably provided at the center of the linking parts 56a, 56b. The load sensor 76 detects the load acting on the polishing tape 33 from the wafer 27 when the polishing tape 33 stretched between the first roller 43a and the second roller 44a is brought into contact with the end surface 27a of the wafer 27. The linear guide provided on the base plate 32 can move the base plate 32 in the direction Y2 away from the wafer 27 based on the detection result of the load sensor 76, and adjust the contact force of the polishing tape 33 against the wafer 27.
なお、図12に示す構成は、上述した実施形態の構成とは異なり、上側移動板45の先端に第1連係ローラ71を設け、下側移動板46の先端に第2連係ローラ72とが設けられており、第1連係ローラ71及び第2連係ローラ72が、X方向に対向配置された連係部56a,56bの長孔57間に架け渡されている。連係部56a,56bの長孔57間には、上側端部に第1ローラ43aが架け渡され、下側端部に第2ローラ44aが架け渡されている。連係部56a,56bの端部にそれぞれ回動自在に設けた第1ローラ43a及び第2ローラ44a間に研磨テープ33が張架されているとともに、第1ローラ43a及び第2ローラ44a間に設けた背面パッド55で研磨テープ33を支持する構成を有する。
12 is different from the configuration of the above-mentioned embodiment, in that a first link roller 71 is provided at the tip of the upper moving plate 45, and a second link roller 72 is provided at the tip of the lower moving plate 46, and the first link roller 71 and the second link roller 72 are hung between the long holes 57 of the link parts 56a and 56b arranged opposite to each other in the X direction. Between the long holes 57 of the link parts 56a and 56b, a first roller 43a is hung at the upper end and a second roller 44a is hung at the lower end. The polishing tape 33 is hung between the first roller 43a and the second roller 44a rotatably provided at the ends of the link parts 56a and 56b, and the polishing tape 33 is supported by a back pad 55 provided between the first roller 43a and the second roller 44a.
このように、本実施形態では、第1ローラ43a及び第2ローラ44aが上側移動板45及び下側移動板46にもうけられていない構成であるものの、上述した実施形態と同様に上側移動板45及び下側移動板46をそれぞれウェーハ27の端面27aに近づく方向又は遠ざかる方向に移動することで、第1ローラ43a及び第2ローラ44aの各々を、独立してウェーハ27の端面27aに近づく方向及び遠ざかる方向に移動させることができる。これにより、第1ローラ43a及び第2ローラ44aの間に張架されて連続して移送されている研磨テープ33を傾斜等させることができる。
Thus, in this embodiment, the first roller 43a and the second roller 44a are not provided on the upper moving plate 45 and the lower moving plate 46, but by moving the upper moving plate 45 and the lower moving plate 46 in a direction toward or away from the edge surface 27a of the wafer 27, as in the above-mentioned embodiment, the first roller 43a and the second roller 44a can be moved independently in a direction toward or away from the edge surface 27a of the wafer 27. This allows the polishing tape 33, which is stretched between the first roller 43a and the second roller 44a and is continuously transported, to be tilted, etc.
以上の構成において、他の実施形態に係るウェーハ端面研磨装置では、ベース板支持部32aと、当該ベース板支持部32aにリニアガイドを介して設けられたベース板32とを、ウェーハ27の端面27aに近づく方向Y1に移動させる。これにより、ウェーハ端面研磨装置は、第1ローラ43a及び第2ローラ44aに連続して移送している研磨テープ33を、ウェーハ回転機構22で支持されているウェーハ27の端面27aに接触させる。この際、ウェーハ端面研磨装置は、第1ローラ43a及び第2ローラ44aの間に張架されて連続して移送されている研磨テープ33をウェーハ27の端面27aに接触させる際に、当該研磨テープ33がウェーハ27から受ける荷重を荷重センサ76によって検出することができる。
In the above configuration, in the wafer edge polishing device according to another embodiment, the base plate support portion 32a and the base plate 32 provided on the base plate support portion 32a via a linear guide are moved in a direction Y1 approaching the edge surface 27a of the wafer 27. As a result, the wafer edge polishing device brings the polishing tape 33, which is continuously transported by the first roller 43a and the second roller 44a, into contact with the edge surface 27a of the wafer 27 supported by the wafer rotation mechanism 22. At this time, when the polishing tape 33, which is continuously transported while being stretched between the first roller 43a and the second roller 44a, is brought into contact with the edge surface 27a of the wafer 27, the wafer edge polishing device can detect the load that the polishing tape 33 receives from the wafer 27 by the load sensor 76.
ウェーハ端面研磨装置は、荷重センサ76で検出した荷重に基づいてリニアガイドを駆動させることによりベース板32をウェーハ27から遠ざかる方向Y2に移動させ、研磨テープ33のウェーハ27の端面27aへの接触力を調整することができる。これにより、このウェーハ端面研磨装置では、研磨テープ33をウェーハ27の端面27aに強く押し付けてしまうことを防止し、研磨テープ33を最適な接触力でウェーハ27の端面27aに押し付けて当該端面27aを一段と正確に研磨することができる。
The wafer edge polishing device moves the base plate 32 in the direction Y2 away from the wafer 27 by driving the linear guide based on the load detected by the load sensor 76, and can adjust the contact force of the polishing tape 33 on the edge surface 27a of the wafer 27. This prevents the polishing tape 33 from being pressed too hard against the edge surface 27a of the wafer 27, and allows the polishing tape 33 to be pressed against the edge surface 27a of the wafer 27 with an optimal contact force, polishing the edge surface 27a more accurately.
また、上述した実施形態では、図3及び図4に示すように、第1移動板としての上側移動板45と、第2移動板としての下側移動板46と、駆動板48と、駆動板48に駆動力を与える駆動部50と、を備えるローラ移動機構25を設けた構成について説明した。この場合、ローラ移動機構25は、駆動板48が駆動部50からの駆動力によって回転中心47aを回転軸として円弧状板部48aを上方に押し上げたり、下方に押し下げたりする。これにより、ローラ移動機構25は、上側移動板45及び下側移動板46をウェーハ27の端面27aに近づけたり、遠ざけたりしていた。しかしながら、本発明はこれに限らない。他の実施形態に係るローラ移動機構としては、例えば、図13に示すように、第1移動板としての上側移動板81と、第2移動板としての下側移動板82と、一対の係合部81a、82aと、係合回転部83aと、駆動部83と、を備えるローラ移動機構251を設けた構成としてもよい。
In the above-mentioned embodiment, as shown in Figures 3 and 4, a configuration has been described in which a roller moving mechanism 25 is provided that includes an upper moving plate 45 as a first moving plate, a lower moving plate 46 as a second moving plate, a driving plate 48, and a driving unit 50 that applies a driving force to the driving plate 48. In this case, the roller moving mechanism 25 has the driving plate 48 pushing the arc-shaped plate portion 48a upward or downward with the rotation center 47a as the rotation axis by the driving force from the driving unit 50. As a result, the roller moving mechanism 25 moves the upper moving plate 45 and the lower moving plate 46 closer to or farther away from the end surface 27a of the wafer 27. However, the present invention is not limited to this. As another embodiment of the roller movement mechanism, for example, as shown in FIG. 13, a roller movement mechanism 251 may be provided that includes an upper moving plate 81 as a first moving plate, a lower moving plate 82 as a second moving plate, a pair of engagement parts 81a, 82a, an engagement rotation part 83a, and a drive part 83.
図13に示すように、第1移動板となる上側移動板81及び第2移動板となる下側移動板82は、ウェーハ端面研磨装置80の基準線Oを中心として対称に配置される。上側移動板81は、Y方向に長手方向を有した金属製の板状体から構成されている。上側移動板81には、先端に第1ローラ43が回転可能に設けられている。上側移動板81は、ウェーハ27の端面27aに第1ローラ43を近づけたり、遠ざけたりする方向(Y方向)に移動自在にベース板32に取り付けられている。上側移動板81には、中央の下側移動板82との対向面に凹部811が形成されている。凹部811の略中央には、ラック等の係合部81aが設けられている。なお、係合部81aは、ラック以外にもウォーム等であってもよい。
As shown in FIG. 13, the upper moving plate 81, which is the first moving plate, and the lower moving plate 82, which is the second moving plate, are arranged symmetrically with respect to the reference line O of the wafer edge polishing device 80. The upper moving plate 81 is composed of a metal plate-shaped body having a longitudinal direction in the Y direction. The upper moving plate 81 has a first roller 43 rotatably attached to its tip. The upper moving plate 81 is attached to the base plate 32 so as to be movable in the direction (Y direction) in which the first roller 43 approaches or moves away from the edge surface 27a of the wafer 27. The upper moving plate 81 has a recess 811 formed on the surface facing the lower moving plate 82 in the center. An engagement portion 81a such as a rack is provided approximately in the center of the recess 811. The engagement portion 81a may be a worm or the like other than a rack.
下側移動板82は、上側移動板81と同様に、Y方向に長手方向を有した金属製の板状体から構成されている。下側移動板82には、先端に第2ローラ44が回転可能に設けられている。下側移動板82は、長手方向が上側移動板81の長手方向(Y軸方向)に対向して配置され、ウェーハ27の端面27aに第2ローラ44を近づけたり、遠ざけたりする方向(Y方向)に移動自在にベース板32に取り付けられている。下側移動板82には、上側移動板81との対向面に凹部821が形成されている。凹部821の略中央には、ラック等の係合部82aが設けられている。なお、係合部82aは、一方の係合部81aと同様、ラック以外にもウォーム等であってもよい。
The lower moving plate 82, like the upper moving plate 81, is made of a metal plate-shaped body having a longitudinal direction in the Y direction. The lower moving plate 82 has a second roller 44 rotatably attached to its tip. The lower moving plate 82 is arranged so that its longitudinal direction faces the longitudinal direction (Y-axis direction) of the upper moving plate 81, and is attached to the base plate 32 so as to be movable in the direction (Y direction) that moves the second roller 44 closer to or farther away from the end surface 27a of the wafer 27. The lower moving plate 82 has a recess 821 formed on the surface facing the upper moving plate 81. An engaging portion 82a such as a rack is provided approximately in the center of the recess 821. Note that the engaging portion 82a may be a worm or the like other than a rack, like the one engaging portion 81a.
係合回転部83aは、上側移動板81の凹部811及び下側移動板82の凹部821の間に設けられている。係合回転部83aは、モータ等の駆動部83からの駆動力によって、回転中心を回転軸として回転可能に設けられている。係合回転部83aは、例えばピニオンギア等であり、外周面に設けられた凹凸が形成された構成を有する。係合回転部83aは、上側移動板81及び下側移動板82の一対の係合部81a、82aとそれぞれ歯合する。係合回転部83aは、駆動部83からの駆動力により反時計回り、時計回りに回転し、回転により一対の係合部81a、82aとの係合位置が移動する。係合回転部83aは、回転することにより上側移動板81及び下側移動板82をY方向に沿って移動させる。係合回転部83aが反時計回りに回転したときには、上側移動板81がウェーハ27の端面27aに近づく方向に移動し、同時に下側移動板82がウェーハ27の端面27aから遠ざかる方向に移動する。逆に、係合回転部83aが時計回りに回転したときには、上側移動板81がウェーハ27の端面27aから遠ざかる方向に移動し、同時に下側移動板82がウェーハ27の端面27aに近づく方向に移動する。
The engaging rotation part 83a is provided between the recess 811 of the upper moving plate 81 and the recess 821 of the lower moving plate 82. The engaging rotation part 83a is provided so as to be rotatable around the center of rotation as the rotation axis by the driving force from the driving part 83 such as a motor. The engaging rotation part 83a is, for example, a pinion gear, and has a configuration in which irregularities are formed on the outer circumferential surface. The engaging rotation part 83a meshes with a pair of engaging parts 81a, 82a of the upper moving plate 81 and the lower moving plate 82, respectively. The engaging rotation part 83a rotates counterclockwise and clockwise by the driving force from the driving part 83, and the engagement position with the pair of engaging parts 81a, 82a moves as a result of the rotation. The engaging rotation part 83a moves the upper moving plate 81 and the lower moving plate 82 along the Y direction as it rotates. When the engaging rotation part 83a rotates counterclockwise, the upper moving plate 81 moves in a direction approaching the end surface 27a of the wafer 27, and at the same time, the lower moving plate 82 moves in a direction away from the end surface 27a of the wafer 27. Conversely, when the engaging rotation part 83a rotates clockwise, the upper moving plate 81 moves in a direction away from the end surface 27a of the wafer 27, and at the same time, the lower moving plate 82 moves in a direction approaching the end surface 27a of the wafer 27.
上側移動板81及び下側移動板82は、ウェーハ27の端面27aと離れた根本部(後端)側に、荷重センサ84が設けられている。荷重センサ84は、例えば、抵抗歪みゲージ式のロードセンサ等を採用することができる。荷重センサ84は、上側検出部84a及び下側検出部84bを備える。上側検出部84aは、上側移動板81の後端に当接し、上側移動板81の移動に伴い上側移動板81のY方向に作用する力を検出する。下側検出部84bは、下側移動板82の後端に当接し、下側移動板82の移動に伴い下側移動板82のY方向に作用する力を検出する。
The upper moving plate 81 and the lower moving plate 82 are provided with a load sensor 84 at the base (rear end) side away from the end surface 27a of the wafer 27. The load sensor 84 may be, for example, a resistance strain gauge type load sensor. The load sensor 84 has an upper detection unit 84a and a lower detection unit 84b. The upper detection unit 84a abuts against the rear end of the upper moving plate 81 and detects the force acting in the Y direction of the upper moving plate 81 as the upper moving plate 81 moves. The lower detection unit 84b abuts against the rear end of the lower moving plate 82 and detects the force acting in the Y direction of the lower moving plate 82 as the lower moving plate 82 moves.
上側移動板81の先端には、ローラ群24を構成する第1ローラ43が設けられている。下側移動板82の先端には、ローラ群24を構成する第2ローラ44が設けられている。第1ローラ43及び第2ローラ44の間には、背面パッド55が設けられている。第1ローラ43と、第2ローラ44と、背面パッド55のウェーハ27の端面27aと対向する面とには、移送する研磨テープ33が設けられる。また、第1ローラ43、第2ローラ44、及び背面パッド55は、長孔57が形成された連係部56a,56bに摺動自在に支持される。第1ローラ43、第2ローラ44、及び背面パッド55は、連係部56a,56bの傾斜状態に応じて、ウェーハ27の端面27aに近づく方向、端面27aから遠ざかる方向に移動する。なお、第1ローラ43、第2ローラ44、背面パッド55及び連係部56a,56bは、図4及び図5に示した構成と同一構成であり、詳細な説明は省略する。
The tip of the upper moving plate 81 is provided with a first roller 43 constituting the roller group 24. The tip of the lower moving plate 82 is provided with a second roller 44 constituting the roller group 24. A back pad 55 is provided between the first roller 43 and the second roller 44. The polishing tape 33 to be transported is provided on the first roller 43, the second roller 44, and the surface of the back pad 55 facing the end face 27a of the wafer 27. The first roller 43, the second roller 44, and the back pad 55 are supported so as to be freely slidable by linking parts 56a, 56b in which a long hole 57 is formed. The first roller 43, the second roller 44, and the back pad 55 move in a direction approaching the end face 27a of the wafer 27 or in a direction away from the end face 27a depending on the inclination state of the linking parts 56a, 56b. The first roller 43, the second roller 44, the back pad 55, and the linking parts 56a and 56b have the same configuration as those shown in Figures 4 and 5, and detailed description will be omitted.
第1ローラ43及び第2ローラ44の接離状態は、前述した実施形態と同様に少なくとも第1研磨作業、第2研磨作業、及び第3研磨作業の3種類に分けられる。第1研磨作業では、図13に示したように、ウェーハ27の端面27aに対する第1ローラ43、第2ローラ44、及び背面パッド55の突出位置をZ方向に揃え、研磨テープ33をZ方向に沿って張架させた状態で移送させる。この時、図示しないウェーハ昇降機構により、ウェーハ27の厚みの中間位置27bとウェーハ端面研磨装置80の基準線OとのZ方向位置を一致させておく。
The contact/separation states of the first roller 43 and the second roller 44 can be divided into at least three types, the first polishing operation, the second polishing operation, and the third polishing operation, as in the above-mentioned embodiment. In the first polishing operation, as shown in FIG. 13, the protruding positions of the first roller 43, the second roller 44, and the back pad 55 relative to the edge surface 27a of the wafer 27 are aligned in the Z direction, and the polishing tape 33 is moved in a stretched state along the Z direction. At this time, the Z direction position of the middle position 27b of the thickness of the wafer 27 and the reference line O of the wafer edge polishing device 80 are aligned by a wafer lifting mechanism (not shown).
次に、ローラ移動機構251により、第1ローラ43及び第2ローラ44に張架された研磨テープ33をウェーハ27の端面27aに当接させ、ウェーハ27の端面27aのZ方向に沿って垂直状に研磨する。荷重センサ84は、上側検出部84aによって、上側移動板81に作用するY方向の力を検出し、下側検出部84bによって、下側移動板82に作用するY方向の力を検出する。ローラ移動機構251は、荷重センサ84で検出された力に応じて、係合回転部83aを回転させ、係合回転部83aと一方の係合部81aとの歯合位置、係合回転部83aと他方の係合部82aとの歯合位置を変える。これにより、ローラ移動機構251は、ウェーハ27の端面27aの研磨量が均等になるように、ウェーハ27の端面27aに対する研磨テープ33の当接状態を調整する。
Next, the roller moving mechanism 251 brings the polishing tape 33 stretched between the first roller 43 and the second roller 44 into contact with the end surface 27a of the wafer 27, and vertically polishes the end surface 27a of the wafer 27 along the Z direction. The load sensor 84 detects the force in the Y direction acting on the upper moving plate 81 by the upper detection unit 84a, and detects the force in the Y direction acting on the lower moving plate 82 by the lower detection unit 84b. The roller moving mechanism 251 rotates the engaging rotation unit 83a according to the force detected by the load sensor 84, and changes the meshing position between the engaging rotation unit 83a and one of the engaging units 81a and the meshing position between the engaging rotation unit 83a and the other engaging unit 82a. As a result, the roller moving mechanism 251 adjusts the state of contact of the polishing tape 33 with the end surface 27a of the wafer 27 so that the amount of polishing of the end surface 27a of the wafer 27 is uniform.
第2研磨作業では、図14に示すように、駆動部83により係合回転部83aを反時計回りに回転させ、係合回転部83aと一方の係合部81aとの歯合位置を係合部81aの後端側に移動させ、同時に係合回転部83aと他方の係合部82aとの歯合位置を係合部82aの先端側に移動させる。上側移動板81は、ウェーハ27の端面27aに近づく方向に移動し、下側移動板82は、ウェーハ27の端面27aから遠ざかる方向に移動する。この時、図示しないウェーハ昇降機構により、ウェーハ27の厚みの中間位置27bをウェーハ端面研磨装置80の基準線OよりもZ方向に沿った下方に移動させる。
In the second polishing operation, as shown in FIG. 14, the drive unit 83 rotates the engagement rotation unit 83a counterclockwise, moving the meshing position between the engagement rotation unit 83a and one of the engagement units 81a toward the rear end of the engagement unit 81a, and simultaneously moving the meshing position between the engagement rotation unit 83a and the other engagement unit 82a toward the tip end of the engagement unit 82a. The upper moving plate 81 moves toward the edge surface 27a of the wafer 27, and the lower moving plate 82 moves away from the edge surface 27a of the wafer 27. At this time, the intermediate position 27b of the thickness of the wafer 27 is moved downward in the Z direction below the reference line O of the wafer edge polishing device 80 by a wafer lifting mechanism (not shown).
第2研磨作業では、連係部56a,56bの上側が背面パッド55を中心にウェーハ27側に傾倒する。これにより、第2研磨作業では、連係部56a,56bの長孔57に沿って第1ローラ43を、背面パッド55を中心としてウェーハ27に近づく方向に移動させ、同時に第2ローラ44を、背面パッド55を中心としてウェーハ27から遠ざかる方向に移動させる。第1ローラ43、第2ローラ44、及び背面パッド55の傾斜状態から、研磨テープ33は、Z方向の上方から下方に向けて次第にウェーハ27の端面27aから遠ざかるように傾斜した状態となる。
In the second polishing operation, the upper sides of the linking parts 56a, 56b are tilted toward the wafer 27 around the back pad 55. As a result, in the second polishing operation, the first roller 43 is moved along the long holes 57 of the linking parts 56a, 56b in a direction approaching the wafer 27 around the back pad 55, and at the same time, the second roller 44 is moved in a direction away from the wafer 27 around the back pad 55. Due to the tilted state of the first roller 43, second roller 44, and back pad 55, the polishing tape 33 is tilted so that it gradually moves away from the edge surface 27a of the wafer 27 from the top to the bottom in the Z direction.
従って、第2研磨作業では、第1ローラ43及び第2ローラ44の間に傾斜した状態で連続して移送し続けている研磨テープ33を、回転するウェーハ27の端面27aの端面上角部周辺に押し付け、ウェーハ27の端面27aの端面上角部周辺を研磨テープ33によって研磨することができる。なお、ローラ移動機構251は、第1研磨作業と同様に、第2研磨作業においても、荷重センサ84の上側検出部84a及び下側検出部84bにより、上側移動板81及び下側移動板82に作用する力を検出し、得られた検出結果に基づいて、係合回転部83aと一対の係合部81a,82aとの各歯合位置を調整する。これにより、ローラ移動機構251は、ウェーハ27の端面27aに対する研磨テープ33の当接状態を変え、ウェーハ27の端面27aの端面上部周辺の研磨量を調整する。
Therefore, in the second polishing operation, the polishing tape 33, which is continuously transferred in an inclined state between the first roller 43 and the second roller 44, is pressed against the upper corners of the end surface 27a of the rotating wafer 27, and the upper corners of the end surface 27a of the wafer 27 can be polished by the polishing tape 33. As in the first polishing operation, in the second polishing operation, the roller moving mechanism 251 detects the forces acting on the upper moving plate 81 and the lower moving plate 82 by the upper detection portion 84a and the lower detection portion 84b of the load sensor 84, and adjusts the meshing positions of the engaging rotation portion 83a and the pair of engaging portions 81a, 82a based on the detection results. As a result, the roller moving mechanism 251 changes the contact state of the polishing tape 33 against the end surface 27a of the wafer 27, and adjusts the amount of polishing around the upper end surface of the end surface 27a of the wafer 27.
第3研磨作業では、図15に示すように、駆動部83によって係合回転部83aを時計回りに回転させ、係合回転部83aと一方の係合部81aとの歯合位置を係合部81aの先端側に移動させ、同時に係合回転部83aと他方の係合部82aとの歯合位置を係合部82aの後端側に移動させる。上側移動板81は、ウェーハ27の端面27aから遠ざかる方向に移動し、下側移動板82は、ウェーハ27の端面27aに近づく方向に移動する。この時、図示しないウェーハ昇降機構により、ウェーハ27の厚みの中間位置27bをウェーハ端面研磨装置80の基準線OよりもZ方向に沿った上方に移動させる。
In the third polishing operation, as shown in FIG. 15, the drive unit 83 rotates the engagement rotation unit 83a clockwise, moving the meshing position between the engagement rotation unit 83a and one of the engagement units 81a toward the tip end of the engagement unit 81a, and simultaneously moving the meshing position between the engagement rotation unit 83a and the other engagement unit 82a toward the rear end of the engagement unit 82a. The upper moving plate 81 moves in a direction away from the edge surface 27a of the wafer 27, and the lower moving plate 82 moves in a direction approaching the edge surface 27a of the wafer 27. At this time, the wafer lifting mechanism (not shown) moves the intermediate position 27b of the thickness of the wafer 27 upward in the Z direction above the reference line O of the wafer edge polishing device 80.
第3研磨作業では、連係部56a,56bの下側が背面パッド55を中心にウェーハ27側に傾倒する。これにより、第3研磨作業では、連係部56a,56bの長孔57に沿って第1ローラ43を、背面パッド55を中心としてウェーハ27から遠ざかる方向に移動させ、同時に第2ローラ44を、背面パッド55を中心としてウェーハ27に近づく方向に移動させる。第1ローラ43、第2ローラ44、及び背面パッド55の傾斜状態から、研磨テープ33は、Z方向の上方から下方に向けて次第にウェーハ27の端面27aから近づくように傾斜した状態となる。
In the third polishing operation, the lower sides of the linking parts 56a, 56b are tilted toward the wafer 27 around the back pad 55. As a result, in the third polishing operation, the first roller 43 is moved along the long holes 57 of the linking parts 56a, 56b in a direction away from the wafer 27 around the back pad 55, and at the same time, the second roller 44 is moved in a direction approaching the wafer 27 around the back pad 55. Due to the tilted state of the first roller 43, second roller 44, and back pad 55, the polishing tape 33 is tilted from the top to the bottom in the Z direction so as to gradually approach the edge surface 27a of the wafer 27.
従って、第3研磨作業では、第1ローラ43及び第2ローラ44の間に傾斜した状態で連続して移送し続けている研磨テープ33を、回転するウェーハ27の端面27aの端面下角部周辺に押し付け、ウェーハ27の端面27aの端面下角部周辺を研磨テープ33によって研磨することができる。なお、ローラ移動機構251は、第1研磨作業と同様に、第3研磨作業においても、荷重センサ84の上側検出部84a及び下側検出部84bにより、上側移動板81及び下側移動板82に作用する圧縮方向の力を検出し、得られた検出結果に基づいて、係合回転部83aと一対の係合部81a,82aとの各歯合位置を調整する。これにより、ローラ移動機構251は、ウェーハ27の端面27aに対する研磨テープ33の当接状態を変え、ウェーハ27の端面27aの端面下部周辺の研磨量を調整する。
Therefore, in the third polishing operation, the polishing tape 33, which is continuously transferred in an inclined state between the first roller 43 and the second roller 44, is pressed against the lower corners of the end face 27a of the rotating wafer 27, and the lower corners of the end face 27a of the wafer 27 can be polished by the polishing tape 33. As in the first polishing operation, in the third polishing operation, the roller moving mechanism 251 detects the compressive force acting on the upper moving plate 81 and the lower moving plate 82 by the upper detection part 84a and the lower detection part 84b of the load sensor 84, and adjusts the meshing positions of the engaging rotation part 83a and the pair of engaging parts 81a, 82a based on the detection results. As a result, the roller moving mechanism 251 changes the contact state of the polishing tape 33 against the end face 27a of the wafer 27, and adjusts the amount of polishing around the lower end face of the end face 27a of the wafer 27.
本実施形態によっても、上述した実施形態と同様の作用及び効果を享受できる。また、本実施形態によれば、上側移動板81及び下側移動板82をウェーハ27の端面27aに近づけたり、遠ざけたりするのを、ラックアンドピニオン等、係合回転部と係合部とによる単純な構造で実現できる。このため、ウェーハ端面研磨装置80の構造の簡素化を図ることができ、単純構造による耐久性の向上も期待できる。
This embodiment also provides the same effects and advantages as the above-mentioned embodiment. Furthermore, this embodiment allows the upper moving plate 81 and the lower moving plate 82 to be moved closer to or farther away from the edge surface 27a of the wafer 27 with a simple structure using an engaging rotating part and an engaging part, such as a rack and pinion. This allows for a simplified structure of the wafer edge surface polishing device 80, and is expected to improve durability due to the simple structure.
また、ローラ移動機構251を備えたウェーハ端面研磨装置80でも、図11に示すような、粗さの異なる2種類の第1研磨テープ63及び第2研磨テープ64を切り替えるテープ切替機構65を、設けた構成としてもよい。この場合、ウェーハ端面研磨装置80にも、上述したウェーハ端面研磨装置62と同様に、テープ切替機構65以外に、第1ローラ群66と、第1ローラ群66に併設された第2ローラ群67と、第1テープ移送機構68と第2テープ移送機構69とを備える。ウェーハ端面研磨装置80は、駆動部83によって係合回転部83aを回転させて係合回転部83aと一対の係合部81a,82aとの各歯合位置を調整することで、第1研磨テープ63及び第2研磨テープ64の傾斜角度を調整できる。これにより、ウェーハ27の端面27aに対する第1研磨テープ63及び第2研磨テープ64の当接状態を変えることができる。なお、テープ切替機構65による第1研磨テープ63又は第2研磨テープ64の切り替え動作や、ウェーハ27の端面27aを研磨する際の、第1ローラ群66及び第2ローラ群67の動作、第1研磨テープ63及び第2研磨テープ64の傾斜角度の調整動作、研磨作業時のウェーハ昇降機構23によるウェーハ27の昇降動作等については、上述した実施形態と同様であるため、ここではその説明は省略する。
Also, the wafer edge polishing device 80 equipped with the roller moving mechanism 251 may be configured to have a tape switching mechanism 65 for switching between the first polishing tape 63 and the second polishing tape 64 of two different roughnesses, as shown in FIG. 11. In this case, like the wafer edge polishing device 62 described above, the wafer edge polishing device 80 is equipped with a first roller group 66, a second roller group 67 provided next to the first roller group 66, a first tape transfer mechanism 68, and a second tape transfer mechanism 69 in addition to the tape switching mechanism 65. The wafer edge polishing device 80 can adjust the inclination angle of the first polishing tape 63 and the second polishing tape 64 by rotating the engagement rotation part 83a by the drive part 83 to adjust the meshing positions of the engagement rotation part 83a and the pair of engagement parts 81a, 82a. This allows the contact state of the first polishing tape 63 and the second polishing tape 64 with the edge surface 27a of the wafer 27 to be changed. In addition, the switching operation of the first polishing tape 63 or the second polishing tape 64 by the tape switching mechanism 65, the operation of the first roller group 66 and the second roller group 67 when polishing the end surface 27a of the wafer 27, the adjustment operation of the inclination angle of the first polishing tape 63 and the second polishing tape 64, the lifting and lowering operation of the wafer 27 by the wafer lifting mechanism 23 during the polishing operation, etc. are the same as those in the above-mentioned embodiment, so their explanations will be omitted here.
16 ウェーハ端面検査装置
17,62,80 ウェーハ端面研磨装置
22 ウェーハ回転機構
23 ウェーハ昇降機構
25,251 ローラ移動機構
26 テープ移送機構
27 ウェーハ
27a 端面
29 回転軸
43,43a 第1ローラ
44,44a 第2ローラ
63 第1研磨テープ
64 第2研磨テープ
65 テープ切替機構
68 第1テープ移送機構
69 第2テープ移送機構
81 上側移動板(第1移動板)
82 下側移動板(第2移動板)
81a,82a 係合部
83 駆動部
83a 係合回転部 16 Wafer edge inspection device 17, 62, 80 Wafer edge polishing device 22 Wafer rotation mechanism 23 Wafer lifting mechanism 25, 251 Roller movement mechanism 26 Tape transfer mechanism 27 Wafer 27a Edge 29 Rotating shaft 43, 43a First roller 44, 44a Second roller 63 First polishing tape 64 Second polishing tape 65 Tape switching mechanism 68 First tape transfer mechanism 69 Second tape transfer mechanism 81 Upper moving plate (first moving plate)
82 Lower moving plate (second moving plate)
81a,82a Engagement portion 83 Drive portion 83a Engagement rotation portion
17,62,80 ウェーハ端面研磨装置
22 ウェーハ回転機構
23 ウェーハ昇降機構
25,251 ローラ移動機構
26 テープ移送機構
27 ウェーハ
27a 端面
29 回転軸
43,43a 第1ローラ
44,44a 第2ローラ
63 第1研磨テープ
64 第2研磨テープ
65 テープ切替機構
68 第1テープ移送機構
69 第2テープ移送機構
81 上側移動板(第1移動板)
82 下側移動板(第2移動板)
81a,82a 係合部
83 駆動部
83a 係合回転部 16 Wafer
82 Lower moving plate (second moving plate)
81a,
Claims (6)
- ウェーハを支持し、前記ウェーハの中心軸を回転軸として前記ウェーハを周方向に回転させるウェーハ回転機構と、
前記ウェーハ回転機構により支持された前記ウェーハを中心軸方向に昇降させるウェーハ昇降機構と、
前記ウェーハ回転機構により支持された前記ウェーハの径方向外側に配置された第1ローラと、
前記ウェーハ回転機構により支持された前記ウェーハの径方向外側に配置され、かつ、前記ウェーハの厚み方向で前記第1ローラと対向して配置された第2ローラと、
前記第1ローラ及び前記第2ローラに巻き掛けさせた研磨テープを、前記第1ローラ及び前記第2ローラの間に張架させ、前記第1ローラ及び前記第2ローラの間で前記研磨テープを移送させるテープ移送機構と、
前記第1ローラ及び前記第2ローラの各々を、独立して前記ウェーハの端面に近づく方向及び遠ざかる方向に移動させ、前記研磨テープを前記ウェーハの端面に接離する方向に移動させるローラ移動機構と、
を備え、
前記ローラ移動機構は、
前記第1ローラ及び前記第2ローラの両方又はいずれか一方を、前記ウェーハ回転機構により支持された前記ウェーハの端面に近づく方向に移動し、前記第1ローラ及び前記第2ローラの間で移送されている前記研磨テープで前記ウェーハの端面を研磨させ、
前記ウェーハ昇降機構は、
前記ウェーハを昇降させることにより、前記ウェーハの厚み方向で前記研磨テープが接する前記ウェーハの端面の位置を変更させる、ウェーハ端面研磨装置。 a wafer rotation mechanism that supports the wafer and rotates the wafer in a circumferential direction around a central axis of the wafer;
a wafer lift mechanism that lifts and lowers the wafer supported by the wafer rotation mechanism in a central axis direction;
a first roller disposed radially outward of the wafer supported by the wafer rotation mechanism;
a second roller disposed radially outward of the wafer supported by the wafer rotation mechanism and opposed to the first roller in a thickness direction of the wafer;
a tape transfer mechanism that stretches the polishing tape wound around the first roller and the second roller between the first roller and the second roller and transfers the polishing tape between the first roller and the second roller;
a roller moving mechanism that moves each of the first roller and the second roller independently in a direction toward and away from the edge surface of the wafer, and moves the polishing tape in a direction toward and away from the edge surface of the wafer;
Equipped with
The roller moving mechanism includes:
moving both or either one of the first roller and the second roller in a direction approaching an edge surface of the wafer supported by the wafer rotation mechanism, and polishing the edge surface of the wafer with the polishing tape being transferred between the first roller and the second roller;
The wafer lifting mechanism includes:
The wafer edge polishing apparatus changes the position of the edge of the wafer with which the polishing tape comes into contact in the thickness direction of the wafer by raising and lowering the wafer. - 前記第1ローラ及び前記第2ローラの間には面部を備える背面パッドが設けられており、
前記背面パッドは、前記第1ローラ及び前記第2ローラの間で移送される前記研磨テープを前記面部で支持し、前記面部で支持した前記研磨テープを前記ウェーハの端面に押し付ける、請求項1に記載のウェーハ端面研磨装置。 a back pad having a surface portion is provided between the first roller and the second roller,
2. The wafer edge polishing apparatus of claim 1, wherein the back pad supports the polishing tape transported between the first roller and the second roller with the surface portion and presses the polishing tape supported by the surface portion against the edge portion of the wafer. - 前記ウェーハ昇降機構は、
前記ウェーハの端面の形状を検査するウェーハ端面検査装置で得られた、前記ウェーハの端面の形状の検査結果に基づいて、前記ウェーハの高さ位置を決める、請求項1に記載のウェーハ端面研磨装置。 The wafer lifting mechanism includes:
2. The wafer edge polishing apparatus according to claim 1, wherein the height position of the wafer is determined based on an inspection result of the shape of the edge of the wafer obtained by a wafer edge inspection apparatus for inspecting the shape of the edge of the wafer. - 前記テープ移送機構が第1テープ移送機構として設けられ、前記研磨テープが第1研磨テープとして設けられており、さらに、
前記ウェーハ回転機構により支持された前記ウェーハの径方向外側に配置された第3ローラと、
前記ウェーハ回転機構により支持された前記ウェーハの径方向外側に配置され、かつ、前記ウェーハの厚み方向で前記第3ローラと対向して配置された第4ローラと、
前記第1研磨テープとは異なる粗さの第2研磨テープを前記第3ローラ及び前記第4ローラに巻き掛けさせて、前記第2研磨テープを前記第3ローラ及び前記第4ローラの間に張架させ、前記第3ローラ及び前記第4ローラの間で前記第2研磨テープを移送させる第2テープ移送機構と、
前記第1ローラと前記第2ローラとでなる第1ローラ群と、前記第3ローラと前記第4ローラとでなる第2ローラ群とを、前記ウェーハに対して相対的に移動させ、前記第1研磨テープ又は前記第2研磨テープを前記ウェーハの端面に摺接させるテープ切替機構と、
を備える、請求項1に記載のウェーハ端面研磨装置。 The tape transport mechanism is provided as a first tape transport mechanism, and the polishing tape is provided as a first polishing tape; and
a third roller disposed radially outward of the wafer supported by the wafer rotation mechanism;
a fourth roller disposed radially outward of the wafer supported by the wafer rotation mechanism and opposed to the third roller in a thickness direction of the wafer;
a second tape transport mechanism that winds a second polishing tape having a roughness different from that of the first polishing tape around the third roller and the fourth roller, stretches the second polishing tape between the third roller and the fourth roller, and transports the second polishing tape between the third roller and the fourth roller;
a tape switching mechanism that moves a first roller group consisting of the first roller and the second roller and a second roller group consisting of the third roller and the fourth roller relative to the wafer, thereby bringing the first polishing tape or the second polishing tape into sliding contact with the edge surface of the wafer;
The wafer edge polishing apparatus according to claim 1 , comprising: - 前記テープ移送機構と前記ローラ移動機構とが設けられたベース板と、
前記ベース板に設けられ、かつ、前記研磨テープを前記ウェーハの端面に接触させた際に前記ウェーハから前記研磨テープに与えられる荷重を検出する荷重センサと、
を備え、
前記ベース板は、
前記荷重センサで検出した荷重に基づいて前記ウェーハから遠ざかる方向に移動し、前記研磨テープの前記ウェーハの端面への接触力を調整する、請求項1に記載のウェーハ端面研磨装置。 a base plate on which the tape transport mechanism and the roller movement mechanism are provided;
a load sensor provided on the base plate and configured to detect a load applied from the wafer to the polishing tape when the polishing tape is brought into contact with the edge surface of the wafer;
Equipped with
The base plate is
2. The wafer edge polishing apparatus according to claim 1, further comprising a load sensor for detecting a load on said wafer edge, said load sensor detecting a load on said wafer edge, and said load sensor detecting a load on said wafer edge. - 前記ローラ移動機構は、
先端に前記第1ローラが設けられた第1移動板と、
前記第1移動板と対向して配置され、先端に前記第2ローラが設けられた第2移動板と、
前記第1移動板及び前記第2移動板の対向面のそれぞれに設けられる一対の係合部と、
前記一対の係合部のそれぞれと係合する係合回転部と、
前記係合回転部を回転させる駆動部と、
を備える、請求項1に記載のウェーハ端面研磨装置。 The roller moving mechanism includes:
a first moving plate having the first roller at its tip;
a second moving plate disposed opposite the first moving plate and having the second roller at a tip thereof;
a pair of engagement portions provided on opposing surfaces of the first moving plate and the second moving plate,
an engaging rotation portion that engages with each of the pair of engaging portions;
A drive unit that rotates the engagement rotation unit;
The wafer edge polishing apparatus according to claim 1 , comprising:
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TW112143641A TW202440269A (en) | 2022-11-18 | 2023-11-13 | Wafer end surface grinding device |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07171749A (en) * | 1993-12-20 | 1995-07-11 | Shin Etsu Handotai Co Ltd | Device for grinding outer circumferential part of wafer |
JP2004241434A (en) * | 2003-02-03 | 2004-08-26 | Ebara Corp | Substrate processing device |
JP2005186176A (en) * | 2003-12-24 | 2005-07-14 | Shinko Electric Ind Co Ltd | Wafer end face polishing device |
JP2016046341A (en) * | 2014-08-21 | 2016-04-04 | 株式会社荏原製作所 | Polishing method |
JP2022123622A (en) * | 2021-02-12 | 2022-08-24 | 株式会社荏原製作所 | Polishing device and polishing method |
-
2023
- 2023-10-17 WO PCT/JP2023/037590 patent/WO2024106110A1/en unknown
- 2023-11-13 TW TW112143641A patent/TW202440269A/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07171749A (en) * | 1993-12-20 | 1995-07-11 | Shin Etsu Handotai Co Ltd | Device for grinding outer circumferential part of wafer |
JP2004241434A (en) * | 2003-02-03 | 2004-08-26 | Ebara Corp | Substrate processing device |
JP2005186176A (en) * | 2003-12-24 | 2005-07-14 | Shinko Electric Ind Co Ltd | Wafer end face polishing device |
JP2016046341A (en) * | 2014-08-21 | 2016-04-04 | 株式会社荏原製作所 | Polishing method |
JP2022123622A (en) * | 2021-02-12 | 2022-08-24 | 株式会社荏原製作所 | Polishing device and polishing method |
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