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WO2021111590A1 - Laminate, method for producing patterned substrate, electronic device and package device - Google Patents

Laminate, method for producing patterned substrate, electronic device and package device Download PDF

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Publication number
WO2021111590A1
WO2021111590A1 PCT/JP2019/047637 JP2019047637W WO2021111590A1 WO 2021111590 A1 WO2021111590 A1 WO 2021111590A1 JP 2019047637 W JP2019047637 W JP 2019047637W WO 2021111590 A1 WO2021111590 A1 WO 2021111590A1
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WO
WIPO (PCT)
Prior art keywords
layer
conductor layer
etching
conductor
etching delay
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Application number
PCT/JP2019/047637
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French (fr)
Japanese (ja)
Inventor
ベジ 佐々木
Original Assignee
ベジ 佐々木
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Application filed by ベジ 佐々木 filed Critical ベジ 佐々木
Priority to JP2021562289A priority Critical patent/JPWO2021111590A1/ja
Priority to PCT/JP2019/047637 priority patent/WO2021111590A1/en
Publication of WO2021111590A1 publication Critical patent/WO2021111590A1/en
Priority to JP2024217539A priority patent/JP2025038061A/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process

Definitions

  • the present invention relates to a laminated board having an insulating layer and a conductor layer, a method for manufacturing the laminated board, an electronic device, and a mounting device.
  • Patent Document 1 proposes a copper-clad laminate having an insulating layer made of polyimide and a first copper foil layer laminated on one side of the insulating layer made of polyimide.
  • the etching rate of the conductor layer located on the upper side is faster than the etching rate of the conductor layer located on the lower side, and the upper side is relative to the lower side. Short patterning tends to form. If the upper side is shorter than the lower side in the shape of the cross section of the conductor layer, there may be a problem that the designed current amount does not flow in the conductor layer.
  • a laminated board and a laminated board capable of reducing the amount that the length of one side opposite to the insulating layer becomes shorter than the length of the other side of the insulating layer side can be reduced.
  • Methods, electronic devices and mounting devices are provided.
  • the etching delay layer may be provided on substantially the entire surface of one surface of the conductor layer.
  • Concept 3 In a laminated board according to either concept 1 or 2.
  • An oxide layer may be provided between the insulating layer and the conductor layer.
  • the conductor layer is a layer containing copper as a main component.
  • the etching delay layer may be a layer containing an alloy containing nickel, titanium, zinc, silver, tin, iron, gold, aluminum, stainless steel, tungsten, platinum, chromium, lead or cobalt as a main component.
  • the thickness of the etching delay layer may be 1/2 to 1/1000 of the thickness of the conductor layer.
  • the thickness of the etching delay layer may be 1/2 to 1/10 of the thickness of the conductor layer.
  • the etching delay layer may be provided on both sides of the conductor layer.
  • the conductor layer may have a thickness of 100 ⁇ m or more.
  • Oxidized layers may be provided on both one side and the other side of the conductor layer.
  • the method for manufacturing a patterning substrate according to the present invention is A step of preparing a laminated plate having an insulating layer, a conductor layer provided on the insulating layer, and etching delay layers provided on one surface or both one side and the other side of the conductor layer. A step of patterning the conductor layer and the etching delay layer by etching the substrate to be processed, and May be provided.
  • the mounting device according to the present invention is The electronic device according to the concept 11 may be provided.
  • the amount of length) shortened with respect to the length (length of the lower side) of the other side of the insulating layer side can be reduced, and the cross-sectional shape of the conductor layer can be made closer to a rectangular shape or a square shape.
  • FIG. 1 is a side sectional view of a laminated board according to an example of the first embodiment of the present invention.
  • FIG. 2A is a side sectional view of a laminated board according to another example of the first embodiment of the present invention, and
  • FIG. 2B is still another example of the first embodiment of the present invention.
  • It is a side sectional view of the laminated board by.
  • FIG. 3 is a side sectional view showing a mode in which a part of the conductor layer before patterning is pushed into the insulating layer.
  • FIG. 4 is a side sectional view showing a mode in which a part of the conductor layer after patterning is pushed into the insulating layer.
  • FIG. 3 is a side sectional view showing a mode in which a part of the conductor layer before patterning is pushed into the insulating layer.
  • FIG. 4 is a side sectional view showing a mode in which a part of the conductor layer after patterning is pushed into the insulating layer.
  • FIG. 5 is a side sectional view showing a mode in which all the side surfaces of the conductor layer before patterning are pushed into the insulating layer.
  • FIG. 6 is a side sectional view showing a mode in which all the side surfaces of the conductor layer after patterning are pushed into the insulating layer.
  • FIG. 7 is a side sectional view showing a mode in which a part of the conductor layer after patterning is pushed into the insulating layer in a mode having a redox layer.
  • FIG. 8 is a side sectional view showing a mode in which the entire side surface of the conductor layer after patterning is pushed into the insulating layer in a mode having a redox layer.
  • 9A is a side sectional view showing a laminated plate having an etching delay layer
  • FIG. 9B is a side showing an aspect in which the etching delay layer is patterned after FIG. 9A.
  • 9 (c) is a cross-sectional view showing a mode in which the conductor layer is patterned after FIG. 9 (b), and FIG. 9 (d) is after FIG. 9 (c).
  • 9A is a side sectional view showing an aspect in which the etching delay layer is removed
  • FIG. 9E is a lateral sectional view showing an aspect in which the conductor layer is pushed into the insulating layer after FIG. 9D. is there.
  • FIG. 9A is a side sectional view showing a laminated plate having an etching delay layer
  • FIG. 9B is a side showing an aspect in which the etching delay layer is patterned after FIG. 9A.
  • 9 (c) is a cross-sectional view showing a mode in which the conductor layer is patterned after FIG. 9 (
  • FIG. 10 (a) is a side sectional view showing an example of an embodiment for forming a redox layer
  • FIG. 10 (b) is a lateral sectional view showing an embodiment having a first redox layer and a second reduced dioxide layer. It is a figure.
  • FIG. 11 is a side sectional view showing an example in which an etching process is performed after a part of the conductor layer is pushed in.
  • FIG. 12A is a side sectional view for explaining an embodiment in which etching is performed when the etching delay layer is not provided
  • FIG. 12B is an etching when the etching delay layer is provided. It is a side sectional view for demonstrating the aspect which performed.
  • FIG. 11 is a side sectional view showing an example in which an etching process is performed after a part of the conductor layer is pushed in.
  • FIG. 12A is a side sectional view for explaining an embodiment in which etching is performed when the etching delay layer is not provided
  • FIG. 13A is a side sectional view showing a mode in which the conductor layer is pushed into the insulating layer after the etching delay layer is removed
  • FIG. 13B is a drawing corresponding to FIG. 13A
  • FIG. 13 (c) is a side sectional view showing an embodiment in which the oxidation-reduction layer is provided on the lower surface and the side surface of the conductor layer.
  • FIG. 13 (c) is a drawing corresponding to FIG. It is a side sectional view which showed the mode provided on the lower surface, the side surface and the upper surface of a layer.
  • FIG. 14 is a side sectional view showing an aspect in which a redox layer having an uneven shape is provided.
  • FIG. 15A is a side sectional view of a laminated board according to an example of the second embodiment of the present invention.
  • FIG. 15B (a) is a side sectional view of a laminated board according to another example of the second embodiment of the present invention, and
  • FIG. 15B (b) is still another example of the second embodiment of the present invention.
  • It is a side sectional view of the laminated board by.
  • FIG. 16A is a side sectional view of a laminated plate according to an example of the third embodiment of the present invention
  • FIG. 16B is a redox layer provided in the third embodiment of the present invention.
  • 16 (c) is a side sectional view of the laminated plate showing another example in which the redox layer is provided, and
  • FIG. 16 (c) is a side sectional view of the laminated plate showing another example. Is a side sectional view of a laminated plate according to still another example provided with a redox layer.
  • FIG. 17 is a diagram showing an example of an electronic device that can be provided by the present invention.
  • FIG. 18 is a side sectional view showing an example of a multilayer substrate that can be adopted in the present invention.
  • FIG. 19 is a side sectional view showing an example of a double-sided plate that can be adopted in the present invention.
  • the laminated board 100 is formed on one surface (upper surface in FIG. 1) of the insulating layer 10, the conductor layer 30 provided on the insulating layer 10, and the conductor layer 30. It may have an etching delay layer 20 provided.
  • the conductor layer 30 and the etching delay layer 20 may not be patterned. That is, it may be the laminated board 100 before being etched or the like.
  • the laminated board 100 provided in the present embodiment may be a printed circuit board, a metal-clad laminated board such as a copper-clad laminated board (CCL: Copper Clad Laminate), or the like.
  • the conductor layer 30 may be a double-sided plate provided on both sides of the insulating layer 10 (see FIG. 19).
  • the conductor layer 30 may be provided on substantially the entire surface of one surface of the insulating layer 10, and the etching delay layer 20 may be provided on substantially the entire surface of one surface of the conductor layer 30.
  • the fact that the conductor layer 30 is provided on substantially the entire surface of one surface of the insulating layer 10 means that the conductor layer 30 covers an area of 95% or more of the insulating layer 10 in a plan view from one side (upper side in FIG. 1). It means that it covers, and it means that the area of the insulating layer 10 that is not covered by the conductor layer 30 is 5% or less.
  • the fact that the etching delay layer 20 is provided on substantially the entire surface of one surface of the conductor layer 30 means that the etching delay layer 20 is 95 of the conductor layer 30 in a plan view from one side (upper side in FIG. 1). It means that it covers an area of% or more, and means that the conductor layer 30 that is not covered by the etching delay layer 20 has an area of 5% or less.
  • the conductor layer 30 may be a metal foil, metal plating, a rolled plate, or the like.
  • the conductor layer 30 may be a copper layer made of copper.
  • the conductor layer 30 may be other than copper, and may be, for example, gold, silver, aluminum, or an alloy containing these metals.
  • the conductor layer 30 may be a metal containing copper as a main component. In the present application, the term "main component" means that the mixture is contained in an amount exceeding 50% by weight.
  • the thickness of the conductor layer 30 may be 100 ⁇ m or more, or 150 ⁇ m or more.
  • the thickness of the conductor layer 30 may be 500 ⁇ m or less, or 300 ⁇ m or less.
  • the etching delay layer 20 may be a nickel layer made of nickel.
  • the etching delay layer 20 may be made of a material that delays etching and may be other than nickel, but it is advantageous to use nickel from the viewpoint of versatility and cost.
  • the etching delay layer 20 may be a material containing nickel as a main component.
  • the etching delay layer 20 may be a material containing titanium, zinc, silver, tin, iron, gold, aluminum, stainless steel, tungsten or platinum, or an alloy containing any two or more of them as a main component. ..
  • the thickness of the etching delay layer 20 is in the range of 1/2 to 1/1000 of the thickness of the conductor layer 30. As a general rule, when the thickness of the conductor layer 30 is increased, the ratio of the thickness of the etching delay layer 20 is relatively small.
  • the etching delay layer 20 may be removed after the etching process is completed. In this case, the etching process is performed, and the etching delay layer 20 is not provided on the laminated plate 100 having the patterned conductor layer 30.
  • the insulating layer 10 may be made of, for example, resin, glass, ceramic or the like.
  • the insulating layer 10 may be a mixture of two or more kinds of insulating substances.
  • the insulating layer 10 may contain a fibrous or granular insulator.
  • the insulating layer 10 may be a semi-cured sheet (prepreg) in which a base material such as paper or glass fiber is impregnated with a resin and dried.
  • the insulating layer 10 may contain a heat conductive substance such as silicon nitride.
  • the semi-cured state is a state in which it is not completely solidified and is deformable.
  • thermoplastic resin As the material of the insulating layer 10, a heat-curable resin, an ultraviolet curable resin, or the like may be used. If there is a certain degree of heat resistance, a thermoplastic resin may be used as the material of the insulating layer 10.
  • a thermosetting resin a polyimide resin, an epoxy resin, a phenol resin, a cyanate resin or the like may be used.
  • the thermoplastic resin may have a thermal deformation temperature of 50 degrees or higher.
  • a redox layer 40 may be provided between the insulating layer 10 and the conductor layer 30.
  • the redox layer 40 may have an uneven shape on the surface on the insulating layer 10 side (see FIG. 14).
  • the redox layer 40 may contain an oxide of a material constituting the conductor layer 30. Further, the redox layer 40 may have an uneven shape in whole or in part.
  • the uneven shape may have a substantially triangular cross section, a substantially rectangular shape, a substantially semicircular shape, or a substantially circular shape, and the fibers are entangled with each other. Such a mesh shape may be formed, and the uneven shape may be configured as various shapes.
  • the "substantially XX shape” means that the shape is approximately XX when viewed by a person skilled in the art.
  • the redox layer 40 may be provided between the conductor layer 30 and the etching delay layer 20.
  • the redox layer 40 may be provided on one surface and the other surface of the conductor layer 30 (see FIG. 2A), or on both sides of one surface and the other surface (see FIG. 2B).
  • the redox layer 40 may contain copper oxide as a main component.
  • Copper oxide may include cuprous oxide, cupric oxide, or both cuprous oxide and cupric oxide.
  • the "main component” means that the content is contained in an amount exceeding 50% by weight.
  • the redox layer 40 has a first redox layer 41 and a second redox layer 42 provided on the insulating layer 10 side of the first redox layer 41. May be good.
  • the first redox layer 41 contains first copper oxide (Cu 2 O) and the second redox layer 42 contains second copper oxide (Cu O). May be contained.
  • the primary redox layer 41 may be made of cuprous oxide (Cu 2 O), and the reduced carbon dioxide layer 42 may be made of cupric oxide (Cu O).
  • the redox layer 40 may be composed of only copper oxide. In other words. All of the redox layer 40 may be composed of copper oxide. In this case, the redox layer 40 is composed of an oxidized layer (oxide layer).
  • the copper oxide may be cuprous oxide (Cu 2 O), cupric oxide (Cu O), or both cuprous oxide and cupric oxide. Since the cuprous oxide becomes the cupric oxide as the oxidation reaction proceeds, the treatment time with the treatment liquid 120 (see FIG. 10A) placed in the container 110 is adjusted to oxidize the copper oxide with the cuprous oxide. The mixing ratio of the second copper may be adjusted.
  • the insulating layer 10 may be in a semi-cured state. A part or all of the patterned conductor layer 30 may be embedded in the semi-cured insulating layer 10 by pushing it into the insulating layer 10 (see FIGS. 3 to 6). When the conductor layer 30 is embedded in the insulating layer 10, a pressing force may be applied to the conductor layer 30, but the present invention is not limited to this mode, and the conductor layer 30 is embedded in the insulating layer 10 by its own weight. It may be. When the conductor layer 30 is embedded in the insulating layer 10, the patterned conductor layer 30 may be embedded in the insulating layer 10 (see FIGS. 4 and 6), or the conductor before patterning. The layer 30 may be embedded in the insulating layer 10 (see FIGS.
  • the entire conductor layer 30 including one surface may be completely embedded inside the insulating layer 10 (FIGS. 13 (a)-(FIG. 13 (a)- c) See).
  • the redox layer 40 is provided over the entire lower surface and side surface of the conductor layer 30, but the redox layer 40 is not provided on the upper surface where the etching delay layer 20 is provided. It is shown.
  • This embodiment can be realized by performing a redox reaction or an oxidation reaction of the conductor layer 30 after performing the etching treatment, and then removing the etching delay layer 20.
  • the redox reaction or the oxidation reaction of the conductor layer 30 is performed after the etching treatment is performed to remove the etching delay layer 20, the redox layer 40 is formed over the entire surface of the conductor layer 30. (See FIG. 13 (c)).
  • the insulating layer 10 may be cured by applying heat or irradiating it with ultraviolet rays.
  • the insulating layer 10 may be cured by allowing it to cool or cool.
  • the redox layer 40 is provided in the region that has entered the insulating layer 10, and the redox layer 40 is not provided in the region (side surface) exposed from the insulating layer 10. Good (see Figure 7).
  • Such an embodiment can be generated by removing the region of the redox layer 40 generated on the entire side surface of the conductor layer 30 that protrudes from the insulating layer 10.
  • the redox layer 40 may be provided on the entire side surface of the conductor layer 30, and the entire conductor layer 30 and the redox layer 40 may be provided in the insulating layer 10 (see FIG. 8).
  • a laminated plate 100 having an insulating layer 10, a conductor layer 30 provided on the insulating layer 10, and an etching delay layer 20 provided on one surface of the conductor layer 30 is prepared (see FIG. 9A).
  • the conductor layer 30 and the etching delay layer 20 are patterned by etching the laminated plate 100 in a state of being appropriately masked (see FIGS. 9 (b) and 9 (c)).
  • a liquid having a component different from that of the etching solution (first etching solution) for patterning the etching delay layer 20 and the etching solution (second etching solution) for patterning the conductor layer 30 may be used.
  • the etching delay layer 20 is patterned with the first etching solution in a state of being appropriately masked (see FIG. 9B).
  • the conductor layer 30 is patterned with the second etching solution in a state of being appropriately masked (see FIG. 9C).
  • the etching delay layer 20 is removed with a chemical solution (a removing solution for removing the etching delay layer 20 or a second etching solution) (see FIG. 9D).
  • the insulating layer 10 is cured by allowing the semi-cured insulating layer 10 to cool or cool. As a result, a laminated plate 100 in which a part of the conductor layer 30 is embedded in the insulating layer 10 is generated.
  • the conductor layer 30 is pushed into the semi-cured insulating layer 10 after the etching delay layer 20 is removed, but the present invention is not limited to this.
  • the etching delay layer 20 may be removed after the conductor layer 30 is pushed into the semi-cured insulating layer 10.
  • the conductor layer 30 may be pushed into the semi-cured insulating layer 10 and then etched, then the etching delay layer 20 may be removed, and then the insulating layer 10 may be cured. Even in this case, by removing a part of the conductor layer 30 by etching, the semi-cured insulating layer 10 moves so as to match the height, and the conductor layer 30 as shown in FIG. 9E is provided.
  • an insulating layer 10 having the same height in the uncovered region.
  • the present invention is not limited to this aspect, and by curing the semi-cured insulating layer 10 early, as shown in FIG. 11, laminated plates 100 having different heights of the insulating layer 10 are generated. May be good.
  • the insulating layer 10 has a concave shape at the place where the conductor layer 30 was present.
  • the shape of the cross section of the conductor layer 30 is rectangular or square. It can be made closer to the shape.
  • the conductor layer 30 located on the upper side is etched more than the conductor layer 30 located on the lower side, and a pattern in which the upper side is shorter than the lower side tends to be formed (FIG. 12). (A).
  • the etching delay layer 20 on one surface of the conductor layer 30, the etching rate of the conductor layer 30 located on the upper side can be slowed down, and as a result, the shape of the conductor layer 30 to be patterned can be reduced. It can be made closer to a rectangular shape or a square shape (see FIG. 12 (b)).
  • the conductor layer 30 and the etching delay layer 20 are not patterned.
  • the conductor layer 30 is processed in order to make the conductor layer 30 close to a rectangular shape or a square shape. It accepts the disadvantage of slowing down the time, and is based on the completely opposite idea to those skilled in the art.
  • a current amount close to the design value can be passed by bringing the conductor layer 30 close to a rectangular shape or a square shape.
  • the conductor pattern such as copper is calculated on the assumption that the cross section is rectangular or square, but in reality, the cross section of the conductor pattern such as copper is trapezoidal.
  • a current amount different from the amount used in the design value will flow.
  • this point can be improved by adopting the aspect of the present embodiment.
  • the conductor layer 30 having a thickness of 100 ⁇ m or more typically, a thick copper type conductor layer
  • the difference in shape of the conductor layer 30 between the case where the etching delay layer 20 is provided and the case where the etching delay layer 20 is not provided. Becomes prominent. Therefore, it is beneficial to adopt this embodiment when adopting the conductor layer 30 having a thickness of 100 ⁇ m or more.
  • the etching rate on one side can be adjusted.
  • the thickness of the etching delay layer 20 is 1/10 or more of the thickness of the conductor layer 30, it is useful when adjusting the etching rate, and when it is 1/5 or more, it is even more useful.
  • the etching delay layer 20 is provided on both one surface and the other surface of the conductor layer 30.
  • Other configurations are the same as those in the first embodiment, and any aspect described in the first embodiment can be adopted.
  • the members described in the first embodiment will be described using the same reference numerals.
  • the etching delay layer 20 provided on one surface side (upper side) of the conductor layer 30 is also referred to as a first etching delay layer 20a, and is provided on the other surface side (lower side) of the conductor layer 30.
  • the etching delay layer 20 is also referred to as a second etching delay layer 20b.
  • the height position of the bottom surface of the conductor layer 30 can be increased.
  • the conductor layer 30 is not positioned at a position where the etching solution stays (the etching solution does not circulate) and the etching effect is lowered, and the conductor layer 30 is located at a position where the flow of the etching solution is smooth and the etching effect can be expected.
  • the lower end of the can be positioned. Therefore, it is possible to prevent the etching rate of the conductor layer 30 located on the insulating layer 10 side (lower side) from becoming slow, and the conductor layer 30 located between the first etching delay layer 20a and the second etching delay layer 20b.
  • the cross-sectional shape of is close to a rectangular shape or a square shape.
  • the thickness of the second etching delay layer 20b is 1/5 or more of the thickness of the conductor layer 30.
  • the thickness of the first etching delay layer 20a and the thickness of the second etching delay layer 20b may be different, and even if the thickness of the second etching delay layer 20b is twice or more the thickness of the first etching delay layer 20a.
  • the thickness of the first etching delay layer 20a may be 1/10 or more of the thickness of the conductor layer 30, and the thickness of the second etching delay layer 20b may be 1/5 or more of the thickness of the conductor layer 30.
  • the first etching delay layer 20a and the second etching delay layer 20b may be made of the same material (for example, nickel), but each may be made of a different material.
  • the conductor layer 30 When the insulating layer 10 is in a semi-cured state, the conductor layer 30 is pushed so that a general part (80% or more) of the second etching delay layer 20b is embedded in the insulating layer 10. May be good. Further, by pushing the conductor layer 30, all of the second etching delay layer 20b may be embedded in the insulating layer 10. Such indentation may be performed after patterning has been performed.
  • the redox layer (oxide layer) 40 may be provided between the conductor layer 30 and the etching delay layer 20.
  • the redox layer 40 may be provided on one side and the other side of the conductor layer 30 (see FIG. 15B (a)), or on both sides of one side and the other side (see FIG. 15B (b)).
  • the etching delay layer 20 (second etching delay layer 20b) is provided on the other surface of the conductor layer 30.
  • Other configurations are the same as those of the first embodiment, and any aspect described in the first embodiment and the second embodiment can be adopted.
  • the members described in the first embodiment or the second embodiment will be described with reference to the same reference numerals.
  • the etching delay layer 20 (first etching delay layer 20a) is not provided on one side, and the etching delay is delayed only on the other side.
  • a layer 20 is provided.
  • the cross-sectional shape of the conductor layer 30 can be made close to a rectangular shape or a square shape for the reason described in the second embodiment.
  • the redox layer (oxide layer) 40 may be provided between the conductor layer 30 and the etching delay layer 20.
  • the redox layer 40 is provided on one side of the conductor layer 30 (see FIG. 16C), the other side (see FIG. 16C), or both sides of one side and the other side (see FIG. 16D). You may.
  • a multilayer substrate in which a plurality of laminated plates as shown in the first to third embodiments are laminated may be adopted.
  • An etching delay layer 20 and / or a redox layer 40 may be provided for each of the conductor layers 30.
  • FIG. 18 shows a mode in which a plurality of laminated plates shown in FIG. 2 (a) are laminated, but the present invention is not limited to this, and FIGS. 1, 2 (b), 15A, 15B (a), and FIG. A mode in which a plurality of laminated plates shown in any of FIGS. 15B (b), 16 (a), 16 (b), 16 (c) and 16 (d) are laminated may be adopted.
  • a multilayer substrate in which a plurality of laminates having any two or more aspects of (d) are laminated may be adopted.
  • a mode in which the configuration of the laminated plate located on the outermost surface (re-upper surface) and the configuration of the other laminated plate (laminated plate located inside) are different may be adopted.
  • An electronic component 210 such as a semiconductor element, a capacitor, or a resistor is placed on the laminated plate 100 in the above-described embodiment, and the electronic component is sealed with a sealing resin 220 to provide an electronic device 200 (FIG. 17). reference).
  • Such electronic devices may be incorporated into any mounting device such as automobiles, airplanes, ships, helicopters, personal computers, home appliances and the like.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A laminate 100 according to the present invention comprises an insulating layer 10, a conductor layer 30 that is provided on the insulating layer 10, and an etching delay layer 20 that is provided on one surface and/or the other surface of the conductor layer 30. The conductor layer 30 and the etching delay layer 20 are not patterned.

Description

積層板、パターニング基板の製造方法、電子装置及び実装装置Laminated board, patterning substrate manufacturing method, electronic equipment and mounting equipment
 本発明は、絶縁層及び導体層を有する積層板、積層板の製造方法、電子装置及び実装装置に関する。 The present invention relates to a laminated board having an insulating layer and a conductor layer, a method for manufacturing the laminated board, an electronic device, and a mounting device.
 従来から、絶縁層に導体層を設けた積層板が知られている。一例として、特許文献1では、ポリイミドからなる絶縁層と、ポリイミドからなる絶縁層の片側の面に積層して設けられた第1の銅箔層とを有する銅張積層板が提案されている。 Conventionally, a laminated board in which a conductor layer is provided as an insulating layer has been known. As an example, Patent Document 1 proposes a copper-clad laminate having an insulating layer made of polyimide and a first copper foil layer laminated on one side of the insulating layer made of polyimide.
特開2016―60138号公報Japanese Unexamined Patent Publication No. 2016-60138
 銅張積層板を含む積層板において導体層をエッチングする際には、上方側に位置する導体層におけるエッチング速度が下方側に位置する導体層におけるエッチング速度よりも速くなり、上辺が下辺に対して短いパターニングが形成される傾向になる。導体層の横断面の形状において上辺が下辺に対して短くなると、設計していた電流量が導体層で流れないという不具合が生じ得る。 When etching a conductor layer in a laminate including a copper-clad laminate, the etching rate of the conductor layer located on the upper side is faster than the etching rate of the conductor layer located on the lower side, and the upper side is relative to the lower side. Short patterning tends to form. If the upper side is shorter than the lower side in the shape of the cross section of the conductor layer, there may be a problem that the designed current amount does not flow in the conductor layer.
 本発明は、導体層の横断面の形状において、絶縁層と反対側の一方側の長さが絶縁層側の他方側の長さに対して短くなる量を少なくできる積層板、積層板の製造方法、電子装置及び実装装置を提供する。 INDUSTRIAL APPLICABILITY According to the present invention, in the shape of the cross section of the conductor layer, a laminated board and a laminated board capable of reducing the amount that the length of one side opposite to the insulating layer becomes shorter than the length of the other side of the insulating layer side can be reduced. Methods, electronic devices and mounting devices are provided.
[概念1]
 本発明による積層板は、
 絶縁層と、
 前記絶縁層に設けられた導体層と、
 前記導体層の一方面、他方面又は一方面及び他方面の両面に設けられたエッチング遅延層と、
 を備え、
 前記導体層及び前記エッチング遅延層がパターニングされていなくてもよい。
[Concept 1]
The laminated board according to the present invention
Insulation layer and
The conductor layer provided in the insulating layer and
Etching delay layers provided on one surface, the other surface, or both sides of the one surface and the other surface of the conductor layer,
With
The conductor layer and the etching delay layer may not be patterned.
[概念2]
 概念1による積層板において、
 前記エッチング遅延層は前記導体層の一方面の略全面に設けられてもよい。
[Concept 2]
In the laminated board according to the concept 1,
The etching delay layer may be provided on substantially the entire surface of one surface of the conductor layer.
[概念3]
 概念1又は2のいずれかによる積層板において、
 前記絶縁層と前記導体層との間に酸化層が設けられてもよい。
[Concept 3]
In a laminated board according to either concept 1 or 2.
An oxide layer may be provided between the insulating layer and the conductor layer.
[概念4]
 概念1乃至3のいずれか1つによる積層板において、
 前記導体層は銅を主成分とする層であり、
  前記エッチング遅延層はニッケル、チタン、亜鉛、銀、錫、鉄、金、アルミ、ステンレス、タングステン、白金、クロム、鉛又はコバルトを含む合金を主成分とする層であってもよい。
[Concept 4]
In a laminated board according to any one of the concepts 1 to 3,
The conductor layer is a layer containing copper as a main component.
The etching delay layer may be a layer containing an alloy containing nickel, titanium, zinc, silver, tin, iron, gold, aluminum, stainless steel, tungsten, platinum, chromium, lead or cobalt as a main component.
[概念5]
 概念1乃至4のいずれか1つによる積層板において、
 前記エッチング遅延層の厚みは前記導体層の厚みの1/2~1/1000であってもよい。
[Concept 5]
In a laminated board according to any one of the concepts 1 to 4,
The thickness of the etching delay layer may be 1/2 to 1/1000 of the thickness of the conductor layer.
[概念6]
 概念5による積層板において、
 前記エッチング遅延層の厚みは前記導体層の厚みの1/2~1/10であってもよい。
[Concept 6]
In the laminated board according to the concept 5,
The thickness of the etching delay layer may be 1/2 to 1/10 of the thickness of the conductor layer.
[概念7]
 概念1乃至6のいずれか1つによる積層板において、
 前記エッチング遅延層は前記導体層の両面に設けられてもよい。
[Concept 7]
In a laminated board according to any one of the concepts 1 to 6,
The etching delay layer may be provided on both sides of the conductor layer.
[概念8]
 概念1乃至7のいずれか1つによる積層板において、
 前記導体層は100μm以上の厚みを有してもよい。
[Concept 8]
In a laminated board according to any one of the concepts 1 to 7,
The conductor layer may have a thickness of 100 μm or more.
[概念9]
 概念1乃至8のいずれか1つによる積層板において、
 前記導体層の一方面及び他方面の両面に酸化層が設けられてもよい。
[Concept 9]
In a laminated board according to any one of the concepts 1 to 8,
Oxidized layers may be provided on both one side and the other side of the conductor layer.
[概念10]
 本発明によるパターニング基板の製造方法は、
 絶縁層と、前記絶縁層に設けられた導体層と、前記導体層の一方面又は一方面及び他方面の両面に設けられたエッチング遅延層と、を有する積層板を準備する工程と、
 前記被処理基板に対してエッチングを行うことで前記導体層及び前記エッチング遅延層をパターニングする工程と、
 を備えてもよい。
[Concept 10]
The method for manufacturing a patterning substrate according to the present invention is
A step of preparing a laminated plate having an insulating layer, a conductor layer provided on the insulating layer, and etching delay layers provided on one surface or both one side and the other side of the conductor layer.
A step of patterning the conductor layer and the etching delay layer by etching the substrate to be processed, and
May be provided.
[概念11]
 本発明による電子装置は、
 概念1乃至9のいずれか1つに記載の積層板と、
 前記積層板に設けられた電子部品と、
 を備えてもよい。
[Concept 11]
The electronic device according to the present invention
The laminated board according to any one of the concepts 1 to 9 and
Electronic components provided on the laminated board and
May be provided.
[概念12]
 本発明による実装装置は、
 概念11に記載の電子装置を備えてもよい。
[Concept 12]
The mounting device according to the present invention is
The electronic device according to the concept 11 may be provided.
 パターニングされていない積層板において、導体層の一方面にエッチング遅延層が設けられる態様を採用する場合には、導体層の横断面の形状において絶縁層と反対側の一方側の長さ(上辺の長さ)が絶縁層側の他方側の長さ(下辺の長さ)に対して短くなる量を少なくでき、導体層の横断面の形状を長方形状や正方形状に近づけることができる。 In the non-patterned laminated board, when the aspect in which the etching delay layer is provided on one surface of the conductor layer is adopted, the length of one side opposite to the insulating layer in the shape of the cross section of the conductor layer (on the upper side). The amount of length) shortened with respect to the length (length of the lower side) of the other side of the insulating layer side can be reduced, and the cross-sectional shape of the conductor layer can be made closer to a rectangular shape or a square shape.
図1は、本発明の第1の実施の形態の一例による積層板の側方断面図である。FIG. 1 is a side sectional view of a laminated board according to an example of the first embodiment of the present invention. 図2(a)は本発明の第1の実施の形態の別の例による積層板の側方断面図であり、図2(b)は本発明の第1の実施の形態のさらに別の例による積層板の側方断面図である。FIG. 2A is a side sectional view of a laminated board according to another example of the first embodiment of the present invention, and FIG. 2B is still another example of the first embodiment of the present invention. It is a side sectional view of the laminated board by. 図3は、パターニングされる前の導体層の一部を絶縁層に押し込んだ態様を示した側方断面図である。FIG. 3 is a side sectional view showing a mode in which a part of the conductor layer before patterning is pushed into the insulating layer. 図4は、パターニングされた後の導体層の一部を絶縁層に押し込んだ態様を示した側方断面図である。FIG. 4 is a side sectional view showing a mode in which a part of the conductor layer after patterning is pushed into the insulating layer. 図5は、パターニングされる前の導体層の側面の全部を絶縁層に押し込んだ態様を示した側方断面図である。FIG. 5 is a side sectional view showing a mode in which all the side surfaces of the conductor layer before patterning are pushed into the insulating layer. 図6は、パターニングされた後の導体層の側面の全部を絶縁層に押し込んだ態様を示した側方断面図である。FIG. 6 is a side sectional view showing a mode in which all the side surfaces of the conductor layer after patterning are pushed into the insulating layer. 図7は、酸化還元層を有する態様において、パターニングされた後の導体層の一部を絶縁層に押し込んだ態様を示した側方断面図である。FIG. 7 is a side sectional view showing a mode in which a part of the conductor layer after patterning is pushed into the insulating layer in a mode having a redox layer. 図8は、酸化還元層を有する態様において、パターニングされた後の導体層の側面の全部を絶縁層に押し込んだ態様を示した側方断面図である。FIG. 8 is a side sectional view showing a mode in which the entire side surface of the conductor layer after patterning is pushed into the insulating layer in a mode having a redox layer. 図9(a)はエッチング遅延層を有する積層板を示した側方断面図であり、図9(b)は図9(a)の後でエッチング遅延層がパターニングされた態様を示した側方断面図であり、図9(c)は図9(b)の後で導体層がパターニングされた態様を示した側方断面図であり、図9(d)は図9(c)の後でエッチング遅延層が除去された態様を示した側方断面図であり、図9(e)は図9(d)の後で導体層が絶縁層に押し込まれた態様を示した側方断面図である。FIG. 9A is a side sectional view showing a laminated plate having an etching delay layer, and FIG. 9B is a side showing an aspect in which the etching delay layer is patterned after FIG. 9A. 9 (c) is a cross-sectional view showing a mode in which the conductor layer is patterned after FIG. 9 (b), and FIG. 9 (d) is after FIG. 9 (c). 9A is a side sectional view showing an aspect in which the etching delay layer is removed, and FIG. 9E is a lateral sectional view showing an aspect in which the conductor layer is pushed into the insulating layer after FIG. 9D. is there. 図10(a)は酸化還元層を生成する態様の一例を示した側方断面図であり、図10(b)は第一酸化還元層及び第二酸化還元層を有する態様を示した側方断面図である。FIG. 10 (a) is a side sectional view showing an example of an embodiment for forming a redox layer, and FIG. 10 (b) is a lateral sectional view showing an embodiment having a first redox layer and a second reduced dioxide layer. It is a figure. 図11は、導体層の一部を押し込んだ後で、エッチング処理を行った態様を示した場合の一例を示した側方断面図である。FIG. 11 is a side sectional view showing an example in which an etching process is performed after a part of the conductor layer is pushed in. 図12(a)はエッチング遅延層が設けられていない場合にエッチングを行った態様を説明するための側方断面図であり、図12(b)はエッチング遅延層が設けられている場合にエッチングを行った態様を説明するための側方断面図である。FIG. 12A is a side sectional view for explaining an embodiment in which etching is performed when the etching delay layer is not provided, and FIG. 12B is an etching when the etching delay layer is provided. It is a side sectional view for demonstrating the aspect which performed. 図13(a)はエッチング遅延層を除去した後に導体層が絶縁層に押し込まれる態様を示した側方断面図であり、図13(b)は図13(a)に対応する図面であって、酸化還元層が導体層の下面及び側面に設けられた態様を示した側方断面図であり、図13(c)は図13(a)に対応する図面であって、酸化還元層が導体層の下面、側面及び上面に設けられた態様を示した側方断面図である。FIG. 13A is a side sectional view showing a mode in which the conductor layer is pushed into the insulating layer after the etching delay layer is removed, and FIG. 13B is a drawing corresponding to FIG. 13A. FIG. 13 (c) is a side sectional view showing an embodiment in which the oxidation-reduction layer is provided on the lower surface and the side surface of the conductor layer. FIG. 13 (c) is a drawing corresponding to FIG. It is a side sectional view which showed the mode provided on the lower surface, the side surface and the upper surface of a layer. 図14は、凹凸形状の酸化還元層が設けられた態様を示した側方断面図である。FIG. 14 is a side sectional view showing an aspect in which a redox layer having an uneven shape is provided. 図15Aは、本発明の第2の実施の形態の一例による積層板の側方断面図である。FIG. 15A is a side sectional view of a laminated board according to an example of the second embodiment of the present invention. 図15B(a)は本発明の第2の実施の形態の別の例による積層板の側方断面図であり、図15B(b)は本発明の第2の実施の形態のさらに別の例による積層板の側方断面図である。FIG. 15B (a) is a side sectional view of a laminated board according to another example of the second embodiment of the present invention, and FIG. 15B (b) is still another example of the second embodiment of the present invention. It is a side sectional view of the laminated board by. 図16(a)は、本発明の第3の実施の形態の一例による積層板の側方断面図であり、図16(b)は本発明の第3の実施の形態において酸化還元層が設けられた一例を示した積層板の側方断面図であり、図16(c)は酸化還元層が設けられた別の例を示した積層板の側方断面図であり、図16(d)は酸化還元層が設けられたさらに別の例による積層板の側方断面図である。FIG. 16A is a side sectional view of a laminated plate according to an example of the third embodiment of the present invention, and FIG. 16B is a redox layer provided in the third embodiment of the present invention. 16 (c) is a side sectional view of the laminated plate showing another example in which the redox layer is provided, and FIG. 16 (c) is a side sectional view of the laminated plate showing another example. Is a side sectional view of a laminated plate according to still another example provided with a redox layer. 図17は、本発明によって提供されうる電子装置の一例を示した図である。FIG. 17 is a diagram showing an example of an electronic device that can be provided by the present invention. 図18は、本発明で採用されうる多層基板の一例を示した側方断面図である。FIG. 18 is a side sectional view showing an example of a multilayer substrate that can be adopted in the present invention. 図19は、本発明で採用されうる両面板の一例を示した側方断面図である。FIG. 19 is a side sectional view showing an example of a double-sided plate that can be adopted in the present invention.
第1の実施の形態
《構成》
 本実施の形態による積層板100は、図1に示すように、絶縁層10と、絶縁層10に設けられた導体層30と、導体層30の一方面(図1の上方側の面)に設けられたエッチング遅延層20と、を有してもよい。導体層30及びエッチング遅延層20はパターニングされていなくてもよい。つまり、エッチング等が施される前の積層板100であってもよい。本実施の形態で提供される積層板100は、プリント基板、銅張積層板(CCL:Copper Clad Laminate)のような金属張積層板等であってもよい。導体層30が絶縁層10の両面に設けられた両面板であってもよい(図19参照)。
First Embodiment << Configuration >>
As shown in FIG. 1, the laminated board 100 according to the present embodiment is formed on one surface (upper surface in FIG. 1) of the insulating layer 10, the conductor layer 30 provided on the insulating layer 10, and the conductor layer 30. It may have an etching delay layer 20 provided. The conductor layer 30 and the etching delay layer 20 may not be patterned. That is, it may be the laminated board 100 before being etched or the like. The laminated board 100 provided in the present embodiment may be a printed circuit board, a metal-clad laminated board such as a copper-clad laminated board (CCL: Copper Clad Laminate), or the like. The conductor layer 30 may be a double-sided plate provided on both sides of the insulating layer 10 (see FIG. 19).
 導体層30は絶縁層10の一方面の略全面に設けられ、エッチング遅延層20は導体層30の一方面の略全面に設けられてもよい。導体層30が絶縁層10の一方面の略全面に設けられるというのは、一方側(図1の上方側)から見た平面視において、導体層30が絶縁層10の95%以上の面積を覆っていることを意味し、導体層30に覆われていない絶縁層10が5%以下の面積であることを意味している。同様に、エッチング遅延層20が導体層30の一方面の略全面に設けられるというのは、一方側(図1の上方側)から見た平面視において、エッチング遅延層20が導体層30の95%以上の面積を覆っていることを意味し、エッチング遅延層20に覆われていない導体層30が5%以下の面積であることを意味している。 The conductor layer 30 may be provided on substantially the entire surface of one surface of the insulating layer 10, and the etching delay layer 20 may be provided on substantially the entire surface of one surface of the conductor layer 30. The fact that the conductor layer 30 is provided on substantially the entire surface of one surface of the insulating layer 10 means that the conductor layer 30 covers an area of 95% or more of the insulating layer 10 in a plan view from one side (upper side in FIG. 1). It means that it covers, and it means that the area of the insulating layer 10 that is not covered by the conductor layer 30 is 5% or less. Similarly, the fact that the etching delay layer 20 is provided on substantially the entire surface of one surface of the conductor layer 30 means that the etching delay layer 20 is 95 of the conductor layer 30 in a plan view from one side (upper side in FIG. 1). It means that it covers an area of% or more, and means that the conductor layer 30 that is not covered by the etching delay layer 20 has an area of 5% or less.
 導体層30は、金属箔、金属めっき、圧延板等であってもよい。導体層30は銅からなる銅層であってもよい。導体層30は、銅以外でもよく、例えば、金、銀、アルミニウム又はこれらの金属を含む合金であってよい。導体層30は銅を主成分として含む金属であってもよい。本願において「主成分」というのは、重量%で50%を超える量で含有されていることを意味している。導体層30の厚みは100μm以上であってもよく、150μm以上であってもよい。導体層30の厚みは500μm以下であってもよく、300μm以下であってもよい。 The conductor layer 30 may be a metal foil, metal plating, a rolled plate, or the like. The conductor layer 30 may be a copper layer made of copper. The conductor layer 30 may be other than copper, and may be, for example, gold, silver, aluminum, or an alloy containing these metals. The conductor layer 30 may be a metal containing copper as a main component. In the present application, the term "main component" means that the mixture is contained in an amount exceeding 50% by weight. The thickness of the conductor layer 30 may be 100 μm or more, or 150 μm or more. The thickness of the conductor layer 30 may be 500 μm or less, or 300 μm or less.
 エッチング遅延層20はニッケルからなるニッケル層であってもよい。エッチング遅延層20は、エッチングを遅延させる材料からなればよく、ニッケル以外でもよいが、汎用性及びコストの観点からするとニッケルを用いることが有益である。エッチング遅延層20はニッケルを主成分とする材料であってもよい。また、エッチング遅延層20は、チタン、亜鉛、銀、錫、鉄、金、アルミ、ステンレス、タングステンもしくは白金、又はこれらのいずれか2つ以上を含む合金を主成分とする材料であってもよい。 The etching delay layer 20 may be a nickel layer made of nickel. The etching delay layer 20 may be made of a material that delays etching and may be other than nickel, but it is advantageous to use nickel from the viewpoint of versatility and cost. The etching delay layer 20 may be a material containing nickel as a main component. Further, the etching delay layer 20 may be a material containing titanium, zinc, silver, tin, iron, gold, aluminum, stainless steel, tungsten or platinum, or an alloy containing any two or more of them as a main component. ..
 エッチング遅延層20の厚みは導体層30の厚みの1/2~1/1000の範囲であることが有益である。一般論としては、導体層30の厚みが厚くなる場合にはエッチング遅延層20の厚みの比率は相対的に小さくなる。 It is beneficial that the thickness of the etching delay layer 20 is in the range of 1/2 to 1/1000 of the thickness of the conductor layer 30. As a general rule, when the thickness of the conductor layer 30 is increased, the ratio of the thickness of the etching delay layer 20 is relatively small.
 エッチング遅延層20はエッチング処理が終了した後で除去されてもよい。この場合には、エッチング処理が行われ、パターニングされた導体層30を有する積層板100にはエッチング遅延層20が設けられていないことになる。 The etching delay layer 20 may be removed after the etching process is completed. In this case, the etching process is performed, and the etching delay layer 20 is not provided on the laminated plate 100 having the patterned conductor layer 30.
 絶縁層10は、例えば樹脂、ガラス、セラミック等から構成されてもよい。絶縁層10は、2種類以上の絶縁性の物質が混合されていてもよい。例えば、絶縁層10に、繊維状又は粒状の絶縁体が含まれていてもよい。絶縁層10は、紙やガラス繊維等の基材に樹脂を含浸させ、乾燥処理した半硬化状態のシート(プリプレグ)であってもよい。絶縁層10は、窒化ケイ素等の熱伝導物質を含有してもよい。半硬化状態とは完全に固まっていない状態であり、変形可能な状態である。 The insulating layer 10 may be made of, for example, resin, glass, ceramic or the like. The insulating layer 10 may be a mixture of two or more kinds of insulating substances. For example, the insulating layer 10 may contain a fibrous or granular insulator. The insulating layer 10 may be a semi-cured sheet (prepreg) in which a base material such as paper or glass fiber is impregnated with a resin and dried. The insulating layer 10 may contain a heat conductive substance such as silicon nitride. The semi-cured state is a state in which it is not completely solidified and is deformable.
 絶縁層10の材料としては、熱効硬化型樹脂、紫外線硬化型樹脂等を用いてもよい。一定の耐熱性があれば、絶縁層10の材料として熱可塑性樹脂を用いてもよい。熱硬化性の樹脂としては、ポリイミド樹脂、エポキシ樹脂、フェノール樹脂、シアネート樹脂等を用いてもよい。熱可塑性樹脂は、熱変形温度が50度以上であってもよい。 As the material of the insulating layer 10, a heat-curable resin, an ultraviolet curable resin, or the like may be used. If there is a certain degree of heat resistance, a thermoplastic resin may be used as the material of the insulating layer 10. As the thermosetting resin, a polyimide resin, an epoxy resin, a phenol resin, a cyanate resin or the like may be used. The thermoplastic resin may have a thermal deformation temperature of 50 degrees or higher.
 絶縁層10と導体層30との間に酸化還元層40が設けられてもよい。酸化還元層40は絶縁層10側の面で凹凸形状を有してもよい(図14参照)。 A redox layer 40 may be provided between the insulating layer 10 and the conductor layer 30. The redox layer 40 may have an uneven shape on the surface on the insulating layer 10 side (see FIG. 14).
 酸化還元層40は導体層30を構成する材料の酸化物を含んでもよい。また、酸化還元層40はその全部又は一部が凹凸形状からなってもよい。凹凸形状は、断面が略三角形状であってもよいし、略矩形状であってもよいし、略半円形状であってもよいし、略円形状であってもよく、繊維が絡み合ったような網目形状となってもよく、凹凸形状は様々な形状として構成されてもよい。本実施の形態において「略○○形状」とは、当業者が見たときに概ね〇〇形状であることを意味している。 The redox layer 40 may contain an oxide of a material constituting the conductor layer 30. Further, the redox layer 40 may have an uneven shape in whole or in part. The uneven shape may have a substantially triangular cross section, a substantially rectangular shape, a substantially semicircular shape, or a substantially circular shape, and the fibers are entangled with each other. Such a mesh shape may be formed, and the uneven shape may be configured as various shapes. In the present embodiment, the "substantially XX shape" means that the shape is approximately XX when viewed by a person skilled in the art.
 図2(a)に示すように、酸化還元層40は導体層30とエッチング遅延層20の間に設けられてもよい。酸化還元層40は導体層30の一方面、他方面(図2(a)参照)、又は一方面と他方面の両面(図2(b)参照)に設けられてもよい。 As shown in FIG. 2A, the redox layer 40 may be provided between the conductor layer 30 and the etching delay layer 20. The redox layer 40 may be provided on one surface and the other surface of the conductor layer 30 (see FIG. 2A), or on both sides of one surface and the other surface (see FIG. 2B).
 酸化還元層40は主成分として酸化銅を含んでもよい。酸化銅は、酸化第1銅、酸化第2銅、又は酸化第1銅及び酸化第2銅の両方を含んでもよい。ここで「主成分」というのは、重量%で50%を超える量で含有されていることを意味している。 The redox layer 40 may contain copper oxide as a main component. Copper oxide may include cuprous oxide, cupric oxide, or both cuprous oxide and cupric oxide. Here, the "main component" means that the content is contained in an amount exceeding 50% by weight.
 図10(b)に示すように、酸化還元層40は、第一酸化還元層41と、第一酸化還元層41よりも絶縁層10側に設けられた第二酸化還元層42とを有してもよい。酸化還元層40が酸化銅から構成される場合には、例えば、第一酸化還元層41が酸化第1銅(CuO)を含有し、第二酸化還元層42が酸化第2銅(CuO)を含有してもよい。また、第一酸化還元層41は酸化第1銅(CuO)からなり、第二酸化還元層42は酸化第2銅(CuO)からなってもよい。 As shown in FIG. 10B, the redox layer 40 has a first redox layer 41 and a second redox layer 42 provided on the insulating layer 10 side of the first redox layer 41. May be good. When the redox layer 40 is composed of copper oxide, for example, the first redox layer 41 contains first copper oxide (Cu 2 O) and the second redox layer 42 contains second copper oxide (Cu O). May be contained. Further, the primary redox layer 41 may be made of cuprous oxide (Cu 2 O), and the reduced carbon dioxide layer 42 may be made of cupric oxide (Cu O).
 酸化還元層40は酸化銅だけから構成されてもよい。つまり。酸化還元層40の全てが酸化銅から構成されてもよい。この場合には、酸化還元層40は酸化した層(酸化層)から構成されることになる。酸化銅は、酸化第1銅(CuO)、酸化第2銅(CuO)、又は酸化第1銅及び酸化第2銅の両方であってもよい。酸化反応が進むことで酸化第1銅が酸化第2銅となることから、容器110に入れた処理液120(図10(a)参照)による処理時間を調整して、酸化第1銅と酸化第2銅の混合比率を調整するようにしてもよい。 The redox layer 40 may be composed of only copper oxide. In other words. All of the redox layer 40 may be composed of copper oxide. In this case, the redox layer 40 is composed of an oxidized layer (oxide layer). The copper oxide may be cuprous oxide (Cu 2 O), cupric oxide (Cu O), or both cuprous oxide and cupric oxide. Since the cuprous oxide becomes the cupric oxide as the oxidation reaction proceeds, the treatment time with the treatment liquid 120 (see FIG. 10A) placed in the container 110 is adjusted to oxidize the copper oxide with the cuprous oxide. The mixing ratio of the second copper may be adjusted.
 絶縁層10は半硬化状態となっていてもよい。半硬化状態の絶縁層10にパターニングされた導体層30の一部又は全部を押し込む等して埋め込んでもよい(図3乃至図6参照)。導体層30を絶縁層10に埋め込む場合には、導体層30に押圧力が付与されてもよいが、このような態様に限られることはなく、導体層30が自重で絶縁層10内に埋め込まれてもよい。導体層30が絶縁層10内に埋め込まれる場合には、パターニングされた後の導体層30が絶縁層10内に埋め込まれてもよいし(図4及び図6参照)、パターニングされる前の導体層30が絶縁層10内に埋め込まれてもよい(図3及び図5参照)。また、エッチング遅延層20を除去した態様であれば、導体層30の一方側の面(上面)を含む全体が絶縁層10の内部に完全に埋め込まれてもよい(図13(a)-(c)参照)。 The insulating layer 10 may be in a semi-cured state. A part or all of the patterned conductor layer 30 may be embedded in the semi-cured insulating layer 10 by pushing it into the insulating layer 10 (see FIGS. 3 to 6). When the conductor layer 30 is embedded in the insulating layer 10, a pressing force may be applied to the conductor layer 30, but the present invention is not limited to this mode, and the conductor layer 30 is embedded in the insulating layer 10 by its own weight. It may be. When the conductor layer 30 is embedded in the insulating layer 10, the patterned conductor layer 30 may be embedded in the insulating layer 10 (see FIGS. 4 and 6), or the conductor before patterning. The layer 30 may be embedded in the insulating layer 10 (see FIGS. 3 and 5). Further, as long as the etching delay layer 20 is removed, the entire conductor layer 30 including one surface (upper surface) may be completely embedded inside the insulating layer 10 (FIGS. 13 (a)-(FIG. 13 (a)- c) See).
 図13(b)では、酸化還元層40が導体層30の下面及び側面の全体にわたり設けられているが、エッチング遅延層20が設けられていた上面には酸化還元層40が設けられていない態様が示されている。この態様は、エッチング処理を行った後で、導体層30の酸化還元反応又は酸化反応を行い、その後でエッチング遅延層20を除去することで実現できる。他方、エッチング処理を行い、エッチング遅延層20を除去した後で、導体層30の酸化還元反応又は酸化反応を行った場合には、導体層30の全面にわたり酸化還元層40が形成されることになる(図13(c)参照)。 In FIG. 13B, the redox layer 40 is provided over the entire lower surface and side surface of the conductor layer 30, but the redox layer 40 is not provided on the upper surface where the etching delay layer 20 is provided. It is shown. This embodiment can be realized by performing a redox reaction or an oxidation reaction of the conductor layer 30 after performing the etching treatment, and then removing the etching delay layer 20. On the other hand, when the redox reaction or the oxidation reaction of the conductor layer 30 is performed after the etching treatment is performed to remove the etching delay layer 20, the redox layer 40 is formed over the entire surface of the conductor layer 30. (See FIG. 13 (c)).
 半硬化状態の絶縁層10にパターニングされた導体層30の一部又は全部を押し込む等して埋め込んだ後で、絶縁層10に熱を加えたり紫外線を照射したりして硬化させてもよい。なお、絶縁層10として熱可塑性樹脂を用いる場合には放冷又は冷却することで絶縁層10を硬化させてもよい。 After embedding a part or all of the patterned conductor layer 30 in the semi-cured insulating layer 10 by pushing it in, the insulating layer 10 may be cured by applying heat or irradiating it with ultraviolet rays. When a thermoplastic resin is used as the insulating layer 10, the insulating layer 10 may be cured by allowing it to cool or cool.
 また酸化還元層40が設けられる態様では、絶縁層10内に入り込んだ領域で酸化還元層40が設けられ、絶縁層10から露出した領域(側面)には酸化還元層40が設けられなくてもよい(図7参照)。このような態様は、導体層30の側面全体に生成された酸化還元層40のうち絶縁層10から突出した領域を除去することで生成できる。導体層30の側面全体に酸化還元層40が設けられ、導体層30及び酸化還元層40の全体が絶縁層10内に設けられてもよい(図8参照)。 Further, in the embodiment in which the redox layer 40 is provided, the redox layer 40 is provided in the region that has entered the insulating layer 10, and the redox layer 40 is not provided in the region (side surface) exposed from the insulating layer 10. Good (see Figure 7). Such an embodiment can be generated by removing the region of the redox layer 40 generated on the entire side surface of the conductor layer 30 that protrudes from the insulating layer 10. The redox layer 40 may be provided on the entire side surface of the conductor layer 30, and the entire conductor layer 30 and the redox layer 40 may be provided in the insulating layer 10 (see FIG. 8).
≪製造工程≫
 本実施の形態による積層板を用いた処理工程の一例について図9を用いて説明する。
≪Manufacturing process≫
An example of the processing process using the laminated board according to the present embodiment will be described with reference to FIG.
 絶縁層10と、絶縁層10に設けられた導体層30と、導体層30の一方面に設けられたエッチング遅延層20と、を有する積層板100を準備する(図9(a)参照)。 A laminated plate 100 having an insulating layer 10, a conductor layer 30 provided on the insulating layer 10, and an etching delay layer 20 provided on one surface of the conductor layer 30 is prepared (see FIG. 9A).
 次に、適宜マスキングした状態で、積層板100に対してエッチングを行うことで導体層30及びエッチング遅延層20をパターニングする(図9(b)(c)参照)。なお、エッチング遅延層20をパターニングする際のエッチング液(第一エッチング液)と、導体層30をパターニングする際のエッチング液(第二エッチング液)とは異なる成分の液体を利用してもよい。 Next, the conductor layer 30 and the etching delay layer 20 are patterned by etching the laminated plate 100 in a state of being appropriately masked (see FIGS. 9 (b) and 9 (c)). A liquid having a component different from that of the etching solution (first etching solution) for patterning the etching delay layer 20 and the etching solution (second etching solution) for patterning the conductor layer 30 may be used.
 一例としては、適宜マスキングした状態で、第一エッチング液によってエッチング遅延層20をパターニングする(図9(b)参照)。その後で、適宜マスキングした状態で、第二エッチング液によって導体層30をパターニングする(図9(c)参照)。 As an example, the etching delay layer 20 is patterned with the first etching solution in a state of being appropriately masked (see FIG. 9B). After that, the conductor layer 30 is patterned with the second etching solution in a state of being appropriately masked (see FIG. 9C).
 エッチングが終了した後で、エッチング遅延層20を薬液(エッチング遅延層20を除去するための除去液又は第二エッチング液)によって除去する(図9(d)参照)。 After the etching is completed, the etching delay layer 20 is removed with a chemical solution (a removing solution for removing the etching delay layer 20 or a second etching solution) (see FIG. 9D).
 その後で、パターニングされた導体層30の一部又は全部を半硬化状態の絶縁層10に押し込む(図9(e)参照)。 After that, a part or all of the patterned conductor layer 30 is pushed into the semi-cured insulating layer 10 (see FIG. 9E).
 次に、半硬化状態の絶縁層10を放冷又は冷却することで絶縁層10を硬化させる。この結果、導体層30の一部が絶縁層10に埋め込まれた積層板100が生成されることになる。 Next, the insulating layer 10 is cured by allowing the semi-cured insulating layer 10 to cool or cool. As a result, a laminated plate 100 in which a part of the conductor layer 30 is embedded in the insulating layer 10 is generated.
 上記では、エッチング遅延層20を除去した後で半硬化状態の絶縁層10に導体層30を押し込む態様を用いて説明したが、これに限られることはない。例えば、半硬化状態の絶縁層10に導体層30を押し込んだ後でエッチング遅延層20を除去してもよい。また、半硬化状態の絶縁層10に導体層30を押し込んだ後でエッチングを行い、その後でエッチング遅延層20を除去し、その後で絶縁層10を硬化させてもよい。この場合でも、導体層30の一部がエッチングで除去されることで、半硬化状態の絶縁層10が高さを合わせるように移動し、図9(e)で示すような導体層30が設けられていない領域で高さの等しい絶縁層10を得ることもできる。ただし、このような態様に限られることはなく、半硬化状態の絶縁層10を早めに硬化させることで、図11に示すように、絶縁層10の高さが異なる積層板100を生成してもよい。図11に示す態様では、導体層30が存在していた箇所で絶縁層10が凹んだ形状となっている。 In the above description, the conductor layer 30 is pushed into the semi-cured insulating layer 10 after the etching delay layer 20 is removed, but the present invention is not limited to this. For example, the etching delay layer 20 may be removed after the conductor layer 30 is pushed into the semi-cured insulating layer 10. Alternatively, the conductor layer 30 may be pushed into the semi-cured insulating layer 10 and then etched, then the etching delay layer 20 may be removed, and then the insulating layer 10 may be cured. Even in this case, by removing a part of the conductor layer 30 by etching, the semi-cured insulating layer 10 moves so as to match the height, and the conductor layer 30 as shown in FIG. 9E is provided. It is also possible to obtain an insulating layer 10 having the same height in the uncovered region. However, the present invention is not limited to this aspect, and by curing the semi-cured insulating layer 10 early, as shown in FIG. 11, laminated plates 100 having different heights of the insulating layer 10 are generated. May be good. In the aspect shown in FIG. 11, the insulating layer 10 has a concave shape at the place where the conductor layer 30 was present.
《効果》
 次に、上述した構成からなる本実施の形態による効果であって、未だ説明していないものを中心に説明する。
"effect"
Next, the effects of the present embodiment having the above-described configuration, which have not been described yet, will be mainly described.
 導体層30の一方面にエッチング遅延層20が設けられ、導体層30及びエッチング遅延層20がパターニングされていない積層板を採用する場合には、導体層30の横断面の形状を長方形状や正方形状に近づけることができる。エッチング処理を行う際には、上方側に位置する導体層30が下方側に位置する導体層30よりもエッチングされてしまい、上辺が下辺に対して短いパターニングが形成される傾向になる(図12(a)参照)。この点、導体層30の一方面にエッチング遅延層20を設けることで、上辺側に位置する導体層30のエッチング速度を遅くすることができ、その結果として、パターニングされる導体層30の形状を長方形状や正方形状に近づけることができる(図12(b)参照)。 When the etching delay layer 20 is provided on one surface of the conductor layer 30 and the laminated plate in which the conductor layer 30 and the etching delay layer 20 are not patterned is adopted, the shape of the cross section of the conductor layer 30 is rectangular or square. It can be made closer to the shape. When the etching process is performed, the conductor layer 30 located on the upper side is etched more than the conductor layer 30 located on the lower side, and a pattern in which the upper side is shorter than the lower side tends to be formed (FIG. 12). (A). In this regard, by providing the etching delay layer 20 on one surface of the conductor layer 30, the etching rate of the conductor layer 30 located on the upper side can be slowed down, and as a result, the shape of the conductor layer 30 to be patterned can be reduced. It can be made closer to a rectangular shape or a square shape (see FIG. 12 (b)).
 本実施の形態では、このようにエッチング処理に着目した態様であることから、導体層30及びエッチング遅延層20がパターニングされていないことは重要なポイントとなる。一般的には、エッチング速度を早めて加工時間を短くすることで、費用を抑えることが試みられているが、本実施の形態では、導体層30を長方形状や正方形状に近づけるために、加工時間が遅くなるというデメリットを受け入れたものであり、通常の当業者とは全く逆の発想に基づいている。 In this embodiment, since the etching process is focused on in this way, it is an important point that the conductor layer 30 and the etching delay layer 20 are not patterned. Generally, it is attempted to reduce the cost by increasing the etching rate and shortening the processing time, but in the present embodiment, the conductor layer 30 is processed in order to make the conductor layer 30 close to a rectangular shape or a square shape. It accepts the disadvantage of slowing down the time, and is based on the completely opposite idea to those skilled in the art.
 本態様によれば導体層30を長方形状や正方形状に近づけることで設計値に近い電流量を流すことができる点で有益である。つまり、設計を行う際には銅等の導体パターンは断面が長方形状や正方形状である前提で計算されているが、実際には銅等の導体パターンの断面が台形状になっていることから、設計値で用いている量と異なる電流量が流れることになる。この点、本実施の形態の態様を採用することで、この点を改善できる点で有益である。 According to this aspect, it is advantageous in that a current amount close to the design value can be passed by bringing the conductor layer 30 close to a rectangular shape or a square shape. In other words, when designing, the conductor pattern such as copper is calculated on the assumption that the cross section is rectangular or square, but in reality, the cross section of the conductor pattern such as copper is trapezoidal. , A current amount different from the amount used in the design value will flow. In this respect, it is advantageous in that this point can be improved by adopting the aspect of the present embodiment.
 導体層30の厚みが厚いほど、導体層30の断面における上辺が下辺に比べて短くなる傾向が強くなることから、本実施の形態の態様を採用することが有益である。特に100μm以上の厚みを有する導体層30(典型的には厚銅タイプの導体層)では、エッチング遅延層20を設ける場合とエッチング遅延層20を設けない場合とでの導体層30の形状の差が顕著なものとなる。このため、100μm以上の厚みを有する導体層30を採用する際に本実施の形態を採用することは有益である。 The thicker the conductor layer 30, the stronger the tendency for the upper side in the cross section of the conductor layer 30 to be shorter than the lower side. Therefore, it is beneficial to adopt the embodiment of the present embodiment. In particular, in the conductor layer 30 having a thickness of 100 μm or more (typically, a thick copper type conductor layer), the difference in shape of the conductor layer 30 between the case where the etching delay layer 20 is provided and the case where the etching delay layer 20 is not provided. Becomes prominent. Therefore, it is beneficial to adopt this embodiment when adopting the conductor layer 30 having a thickness of 100 μm or more.
 エッチング遅延層20の厚みを調整することで一方側(上方側)のエッチング速度を調整できる。特にエッチング遅延層20の厚みが導体層30の厚みの1/10以上となる場合には、エッチング速度を調整する際には有益であり、1/5以上となる場合にはさらに有益である。 By adjusting the thickness of the etching delay layer 20, the etching rate on one side (upper side) can be adjusted. In particular, when the thickness of the etching delay layer 20 is 1/10 or more of the thickness of the conductor layer 30, it is useful when adjusting the etching rate, and when it is 1/5 or more, it is even more useful.
第2の実施の形態
 次に、本発明の第2の実施の形態について説明する。
Second Embodiment Next, a second embodiment of the present invention will be described.
 図15Aに示すように、本実施の形態では、エッチング遅延層20が導体層30の一方面及び他方面の両方に設けられている。その他の構成については、第1の実施の形態と同様であり、第1の実施の形態で説明したあらゆる態様を採用することができる。第1の実施の形態で説明した部材については同じ符号を用いて説明する。本実施の形態では、導体層30の一方面側(上方側)に設けられたエッチング遅延層20を第一エッチング遅延層20aとも呼び、導体層30の他方面側(下方側)に設けられたエッチング遅延層20を第二エッチング遅延層20bとも呼ぶ。 As shown in FIG. 15A, in the present embodiment, the etching delay layer 20 is provided on both one surface and the other surface of the conductor layer 30. Other configurations are the same as those in the first embodiment, and any aspect described in the first embodiment can be adopted. The members described in the first embodiment will be described using the same reference numerals. In the present embodiment, the etching delay layer 20 provided on one surface side (upper side) of the conductor layer 30 is also referred to as a first etching delay layer 20a, and is provided on the other surface side (lower side) of the conductor layer 30. The etching delay layer 20 is also referred to as a second etching delay layer 20b.
 他方側に第二エッチング遅延層20bを設けることで、導体層30の底面の高さ位置を高くすることができる。その結果として、エッチング液が滞留して(エッチング液が循環せず)エッチング効果が低くなる位置に導体層30を位置づけず、エッチング液の流れがスムーズでありエッチング効果を期待できる位置に導体層30の下端を位置付けることができる。このため、絶縁層10側(下方側)に位置する導体層30のエッチング速度が遅くなることを防止でき、第一エッチング遅延層20aと第二エッチング遅延層20bとの間に位置する導体層30の断面形状を長方形状や正方形状に近づけることができる。 By providing the second etching delay layer 20b on the other side, the height position of the bottom surface of the conductor layer 30 can be increased. As a result, the conductor layer 30 is not positioned at a position where the etching solution stays (the etching solution does not circulate) and the etching effect is lowered, and the conductor layer 30 is located at a position where the flow of the etching solution is smooth and the etching effect can be expected. The lower end of the can be positioned. Therefore, it is possible to prevent the etching rate of the conductor layer 30 located on the insulating layer 10 side (lower side) from becoming slow, and the conductor layer 30 located between the first etching delay layer 20a and the second etching delay layer 20b. The cross-sectional shape of is close to a rectangular shape or a square shape.
 導体層30の底面の高さ位置を高めるという観点からすると、第二エッチング遅延層20bの厚みが導体層30の厚みの1/5以上となることが有益である。このような厚みを有する第二エッチング遅延層20bを採用することで、エッチング処理が進みにくい下方側には導体層30が位置しないようにすることができる。 From the viewpoint of increasing the height position of the bottom surface of the conductor layer 30, it is beneficial that the thickness of the second etching delay layer 20b is 1/5 or more of the thickness of the conductor layer 30. By adopting the second etching delay layer 20b having such a thickness, it is possible to prevent the conductor layer 30 from being located on the lower side where the etching process is difficult to proceed.
 第一エッチング遅延層20aの厚みと第二エッチング遅延層20bの厚みを異なるようにしてもよく、第二エッチング遅延層20bの厚みが第一エッチング遅延層20aの厚みの2倍以上となってもよい。例えば第一エッチング遅延層20aの厚みを導体層30の厚みの1/10以上とし、第二エッチング遅延層20bの厚みを導体層30の厚みの1/5以上とすることもできる。 The thickness of the first etching delay layer 20a and the thickness of the second etching delay layer 20b may be different, and even if the thickness of the second etching delay layer 20b is twice or more the thickness of the first etching delay layer 20a. Good. For example, the thickness of the first etching delay layer 20a may be 1/10 or more of the thickness of the conductor layer 30, and the thickness of the second etching delay layer 20b may be 1/5 or more of the thickness of the conductor layer 30.
 第一エッチング遅延層20aと第二エッチング遅延層20bは同じ材料(例えばニッケル)から構成されてもよいが、各々が異なる材料から構成されてもよい。 The first etching delay layer 20a and the second etching delay layer 20b may be made of the same material (for example, nickel), but each may be made of a different material.
 絶縁層10が半硬化状態となっている場合には、導体層30を押し込むことで、第二エッチング遅延層20bの概ねの部分(80%以上)が絶縁層10内に埋設されるようにしてもよい。また、導体層30を押し込むことで、第二エッチング遅延層20bの全てが絶縁層10内に埋設されるようにしてもよい。このような押し込みはパターニングが施された後で行われてもよい。 When the insulating layer 10 is in a semi-cured state, the conductor layer 30 is pushed so that a general part (80% or more) of the second etching delay layer 20b is embedded in the insulating layer 10. May be good. Further, by pushing the conductor layer 30, all of the second etching delay layer 20b may be embedded in the insulating layer 10. Such indentation may be performed after patterning has been performed.
 図15B(a)(b)に示すように、酸化還元層(酸化層)40は導体層30とエッチング遅延層20の間に設けられてもよい。酸化還元層40は導体層30の一方面、他方面(図15B(a)参照)、又は一方面と他方面の両面(図15B(b)参照)に設けられてもよい。 As shown in FIGS. 15B (a) and 15B, the redox layer (oxide layer) 40 may be provided between the conductor layer 30 and the etching delay layer 20. The redox layer 40 may be provided on one side and the other side of the conductor layer 30 (see FIG. 15B (a)), or on both sides of one side and the other side (see FIG. 15B (b)).
第3の実施の形態
 次に、本発明の第3の実施の形態について説明する。
Third Embodiment Next, a third embodiment of the present invention will be described.
 図16(a)に示すように、本実施の形態では、エッチング遅延層20(第二エッチング遅延層20b)が導体層30の他方面に設けられている。その他の構成については、第1の実施の形態と同様であり、第1の実施の形態及び第2の実施の形態で説明したあらゆる態様を採用することができる。第1の実施の形態又は第2の実施の形態で説明した部材については同じ符号を用いて説明する。 As shown in FIG. 16A, in the present embodiment, the etching delay layer 20 (second etching delay layer 20b) is provided on the other surface of the conductor layer 30. Other configurations are the same as those of the first embodiment, and any aspect described in the first embodiment and the second embodiment can be adopted. The members described in the first embodiment or the second embodiment will be described with reference to the same reference numerals.
 第1の実施の形態及び第2の実施の形態とは異なり、本実施の形態では一方側にエッチング遅延層20(第一エッチング遅延層20a)が設けられておらず、他方側にだけエッチング遅延層20が設けられている。このような態様であっても第2の実施の形態で説明した理由から、導体層30の断面形状を長方形状や正方形状に近づけることができる。 Unlike the first embodiment and the second embodiment, in this embodiment, the etching delay layer 20 (first etching delay layer 20a) is not provided on one side, and the etching delay is delayed only on the other side. A layer 20 is provided. Even in such an embodiment, the cross-sectional shape of the conductor layer 30 can be made close to a rectangular shape or a square shape for the reason described in the second embodiment.
 図16(b)に示すように、酸化還元層(酸化層)40が導体層30とエッチング遅延層20の間に設けられてもよい。酸化還元層40は導体層30の一方面(図16(c)参照)、他方面(図16(c)参照)、又は一方面と他方面の両面(図16(d)参照)に設けられてもよい。 As shown in FIG. 16B, the redox layer (oxide layer) 40 may be provided between the conductor layer 30 and the etching delay layer 20. The redox layer 40 is provided on one side of the conductor layer 30 (see FIG. 16C), the other side (see FIG. 16C), or both sides of one side and the other side (see FIG. 16D). You may.
≪多層基板≫
 第1の実施の形態から第3の実施の形態で示したような積層板が複数積層される多層基板が採用されてもよい。導体層30の各々に対してエッチング遅延層20及び/又は酸化還元層40が設けられてもよい。
≪Multilayer board≫
A multilayer substrate in which a plurality of laminated plates as shown in the first to third embodiments are laminated may be adopted. An etching delay layer 20 and / or a redox layer 40 may be provided for each of the conductor layers 30.
 図18では図2(a)で示す積層板が複数積層された態様を示しているが、これに限られることはなく、図1、図2(b)、図15A、図15B(a)、図15B(b)、図16(a)、図16(b)、図16(c)及び図16(d)のいずれかで示す積層板が複数積層された態様を採用してもよいし、図1、図2(a)、図2(b)、図15A、図15B(a)、図15B(b)、図16(a)、図16(b)、図16(c)及び図16(d)のいずれか2つ以上の態様からなる積層板が複数積層された多層基板を採用してもよい。最表面(再上面)に位置する積層板の構成と、その他の積層板(内部に位置する積層板)の構成が異なる態様を採用してもよい。 FIG. 18 shows a mode in which a plurality of laminated plates shown in FIG. 2 (a) are laminated, but the present invention is not limited to this, and FIGS. 1, 2 (b), 15A, 15B (a), and FIG. A mode in which a plurality of laminated plates shown in any of FIGS. 15B (b), 16 (a), 16 (b), 16 (c) and 16 (d) are laminated may be adopted. 1, FIG. 2 (a), FIG. 2 (b), FIG. 15A, FIG. 15B (a), FIG. 15B (b), FIG. 16 (a), FIG. 16 (b), FIG. 16 (c) and FIG. A multilayer substrate in which a plurality of laminates having any two or more aspects of (d) are laminated may be adopted. A mode in which the configuration of the laminated plate located on the outermost surface (re-upper surface) and the configuration of the other laminated plate (laminated plate located inside) are different may be adopted.
 上述した各実施の形態の記載及び図面の開示は、特許請求の範囲に記載された発明を説明するための一例に過ぎず、上述した実施の形態の記載又は図面の開示によって特許請求の範囲に記載された発明が限定されることはない。 The description of each embodiment and the disclosure of the drawings described above are merely examples for explaining the invention described in the claims, and the description of the above-described embodiments or the disclosure of the drawings is included in the claims. The described invention is not limited.
 上述した実施の形態における積層板100に半導体素子、コンデンサ、抵抗等の電子部品210が載置され、当該電子部品が封止樹脂220で封入されることで電子装置200が提供される(図17参照)。このような電子装置は、自動車、飛行機、船舶、ヘリコプター、パソコン、家電等のあらゆる実装装置に組み込まれてもよい。 An electronic component 210 such as a semiconductor element, a capacitor, or a resistor is placed on the laminated plate 100 in the above-described embodiment, and the electronic component is sealed with a sealing resin 220 to provide an electronic device 200 (FIG. 17). reference). Such electronic devices may be incorporated into any mounting device such as automobiles, airplanes, ships, helicopters, personal computers, home appliances and the like.
10    絶縁層
20    エッチング遅延層
30    導体層
100   積層板
10 Insulation layer 20 Etching delay layer 30 Conductor layer 100 Laminated plate

Claims (13)

  1.  絶縁層と、
     前記絶縁層に設けられた導体層と、
     前記導体層の一方面、他方面又は一方面及び他方面の両面に設けられたエッチング遅延層と、
     を備え、
     前記導体層及び前記エッチング遅延層がパターニングされていない積層板。
    Insulation layer and
    The conductor layer provided in the insulating layer and
    Etching delay layers provided on one surface, the other surface, or both sides of the one surface and the other surface of the conductor layer,
    With
    A laminated board in which the conductor layer and the etching delay layer are not patterned.
  2.  前記エッチング遅延層は前記導体層の一方面の略全面に設けられる、請求項1に記載の積層板。 The laminated plate according to claim 1, wherein the etching delay layer is provided on substantially the entire surface of one surface of the conductor layer.
  3.  前記絶縁層と前記導体層との間に酸化層が設けられる、請求項1又は2のいずれかに記載の積層板。 The laminated plate according to claim 1 or 2, wherein an oxide layer is provided between the insulating layer and the conductor layer.
  4.  前記導体層は銅を主成分とする層であり、
     前記エッチング遅延層はニッケル、チタン、亜鉛、銀、錫、鉄、金、アルミ、ステンレス、タングステン、白金、クロム、鉛又はコバルトを含む合金を主成分とする層である請求項1乃至3のいずれか1項に記載の積層板。
    The conductor layer is a layer containing copper as a main component.
    Any of claims 1 to 3, wherein the etching delay layer is a layer containing an alloy containing nickel, titanium, zinc, silver, tin, iron, gold, aluminum, stainless steel, tungsten, platinum, chromium, lead or cobalt as a main component. The laminated board according to item 1.
  5.  前記エッチング遅延層の厚みは前記導体層の厚みの1/2~1/1000である請求項1乃至4のいずれか1項に記載の積層板。 The laminated plate according to any one of claims 1 to 4, wherein the thickness of the etching delay layer is 1/2 to 1/1000 of the thickness of the conductor layer.
  6.  前記エッチング遅延層の厚みは前記導体層の厚みの1/2~1/10である請求項5に記載の積層板。 The laminated plate according to claim 5, wherein the thickness of the etching delay layer is 1/2 to 1/10 of the thickness of the conductor layer.
  7.  前記エッチング遅延層は前記導体層の両面に設けられている請求項1乃至6のいずれか1項に記載の積層板。 The laminated plate according to any one of claims 1 to 6, wherein the etching delay layer is provided on both sides of the conductor layer.
  8.  前記導体層は100μm以上の厚みを有する請求項1乃至7のいずれか1項に記載の積層板。 The laminated plate according to any one of claims 1 to 7, wherein the conductor layer has a thickness of 100 μm or more.
  9.  前記導体層の一方面及び他方面の両面に酸化層が設けられる請求項1乃至8のいずれか1項に記載の積層板。 The laminated plate according to any one of claims 1 to 8, wherein an oxide layer is provided on both one side and the other side of the conductor layer.
  10.  前記絶縁層は半硬化状態である請求項1乃至9のいずれか1項に記載の積層板。 The laminated plate according to any one of claims 1 to 9, wherein the insulating layer is in a semi-cured state.
  11.  絶縁層と、前記絶縁層に設けられた導体層と、前記導体層の一方面又は一方面及び他方面の両面に設けられたエッチング遅延層と、を有する積層板を準備する工程と、
     前記被処理基板に対してエッチングを行うことで前記導体層及び前記エッチング遅延層をパターニングする工程と、
     を備えるパターニング基板の製造方法。
    A step of preparing a laminated plate having an insulating layer, a conductor layer provided on the insulating layer, and etching delay layers provided on one surface or both one side and the other side of the conductor layer.
    A step of patterning the conductor layer and the etching delay layer by etching the substrate to be processed, and
    A method for manufacturing a patterning substrate comprising.
  12.  請求項1乃至10のいずれか1項に記載の積層板と、
     前記積層板に設けられた電子部品と、
     を備えた電子装置。
    The laminated board according to any one of claims 1 to 10 and
    Electronic components provided on the laminated board and
    Electronic device equipped with.
  13.  請求項12に記載の電子装置を備えた実装装置。 A mounting device including the electronic device according to claim 12.
PCT/JP2019/047637 2019-12-05 2019-12-05 Laminate, method for producing patterned substrate, electronic device and package device WO2021111590A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555750A (en) * 1991-08-23 1993-03-05 Matsushita Electric Ind Co Ltd Multilayer printed wiring board and manufacturing method thereof
JPH05327180A (en) * 1992-05-20 1993-12-10 Fujitsu Ltd Method for forming conductor pattern
JPH0681172A (en) * 1992-09-01 1994-03-22 Hitachi Cable Ltd Formation of fine pattern
JP2007027618A (en) * 2005-07-21 2007-02-01 Fuji Name Plate Kk Printed wiring board and its manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555750A (en) * 1991-08-23 1993-03-05 Matsushita Electric Ind Co Ltd Multilayer printed wiring board and manufacturing method thereof
JPH05327180A (en) * 1992-05-20 1993-12-10 Fujitsu Ltd Method for forming conductor pattern
JPH0681172A (en) * 1992-09-01 1994-03-22 Hitachi Cable Ltd Formation of fine pattern
JP2007027618A (en) * 2005-07-21 2007-02-01 Fuji Name Plate Kk Printed wiring board and its manufacturing method

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