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WO2014059603A1 - 一种双面显示屏及其制造方法 - Google Patents

一种双面显示屏及其制造方法 Download PDF

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Publication number
WO2014059603A1
WO2014059603A1 PCT/CN2012/083032 CN2012083032W WO2014059603A1 WO 2014059603 A1 WO2014059603 A1 WO 2014059603A1 CN 2012083032 W CN2012083032 W CN 2012083032W WO 2014059603 A1 WO2014059603 A1 WO 2014059603A1
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WIPO (PCT)
Prior art keywords
emitting structure
light emitting
tft
driving circuit
substrate
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PCT/CN2012/083032
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English (en)
French (fr)
Inventor
余晓军
魏鹏
刘自鸿
Original Assignee
深圳市柔宇科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 深圳市柔宇科技有限公司 filed Critical 深圳市柔宇科技有限公司
Priority to CN201280001471.3A priority Critical patent/CN103907050A/zh
Priority to PCT/CN2012/083032 priority patent/WO2014059603A1/zh
Publication of WO2014059603A1 publication Critical patent/WO2014059603A1/zh
Priority to US14/688,468 priority patent/US20150295015A1/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/128Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13452Conductors connecting driver circuitry and terminals of panels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/021Manufacture or treatment of multiple TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441Interconnections, e.g. scanning lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/127Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133342Constructional arrangements; Manufacturing methods for double-sided displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/302Details of OLEDs of OLED structures
    • H10K2102/3023Direction of light emission
    • H10K2102/3031Two-side emission, e.g. transparent OLEDs [TOLED]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment

Definitions

  • the invention belongs to the technical field of display, and in particular relates to a double-sided display screen and a manufacturing method thereof.
  • a single display capable of double-sided display also has the following disadvantages: the display panel types on the front and back of the display are the same, for example, the double-sided panels are actively illuminated, such as LED, OLED panel, or passively illuminated panel, such as LCD
  • the panel has a large application limit. Therefore, there is a need to provide a new type of double-sided display panel to overcome the above problems, to provide users with a better sensory experience and to meet more needs.
  • the object of the present invention is to provide a double-sided display screen, which aims to solve the complicated structure, high cost and overall overall thickness of the conventional double-sided display screen. And limited application issues.
  • a double-sided display screen includes a driving circuit substrate including a plurality of via holes, and a front side light emitting structure and a back side light emitting structure are respectively disposed on a front surface and a back surface of the driving circuit substrate;
  • a TFT is provided on the front or back of the driving circuit substrate a driving circuit for driving the front side light emitting structure and the back side light emitting structure;
  • the driving electrode is electrically connected to the TFT unit in the TFT driving circuit through the via hole.
  • One side of the driving circuit is provided with a driving electrode corresponding to the through hole, and the driving electrode is electrically connected to the TFT unit of the TFT driving circuit through the through hole;
  • the present invention provides a TFT driving circuit on one side of a driving circuit substrate, and a driving electrode on the other side thereof, and a TFT
  • the driving circuit is led to the other side of the substrate through the via hole and electrically connected to the driving electrode to make the TFT disposed on the same side of the driving circuit substrate
  • the driving circuit smoothly drives the light-emitting structures on both sides of the substrate, and the overall thickness thereof is greatly reduced, the structure is simplified, the material cost is saved, and the performance is superior and the cost is low, and the utility model is suitable for various applications.
  • the display device in addition, the type of the double-sided light-emitting structure is not necessarily limited to the same type, and any combination can be made without limitation.
  • the double-sided display drives the pixel illumination by active active driving, and can support a large-sized display.
  • FIG. 1 is a schematic structural view (1) of a double-sided display screen according to an embodiment of the present invention
  • FIG. 2 is a schematic structural view of a double-sided display screen according to an embodiment of the present invention (2);
  • FIG 1 A schematic structural view of a double-sided display screen provided by an embodiment of the present invention is shown. For convenience of description, only parts related to the present embodiment are shown.
  • the double-sided display screen includes a driving circuit substrate 1 including a plurality of via holes 11 on the driving circuit substrate 1
  • the front side and the back side are respectively provided with a front side light emitting structure 2 and a back side light emitting structure 3, and a front side or a back side of the driving circuit board 1 is further provided with a TFT driving circuit 4.
  • the TFT driving circuit 4 It is disposed between the front light emitting structure 2 or the back light emitting structure 3 and the driving circuit substrate 1, and the TFT driving circuit 4 includes a plurality of TFT units 41. .
  • a plurality of driving electrodes 5, the driving electrodes 5 and the via holes 11 are provided on the other surface of the driving circuit substrate 1 (the surface on which the TFT driving circuit 4 is not provided).
  • a pair of bit positions are disposed, and are electrically connected to the TFT unit 41 of the TFT driving circuit 4 through the corresponding via hole 11. .
  • the above TFT driving circuit 4 On the one hand, it is used to drive the light-emitting structure on the same side thereof, and on the other hand, the light-emitting structure on the other side of the drive circuit substrate 1 is driven by the drive electrode 5 electrically connected thereto.
  • As a way of electrically connecting it can be in the via hole 11 is filled with a conductive medium, and the TFT unit 41 and the driving electrode 5 are connected by a conductive medium.
  • the TFT driving circuit 4 can be provided only in one group, and the TFT driving circuit 4 is passed through the group when the display screen is in operation. At the same time, the front and back light-emitting structures are driven, and the front and back light-emitting structures can simultaneously display the same content to realize double-sided display.
  • the TFT driving circuit 4 can be provided in two groups, and is still disposed on the driving circuit substrate 1 The same side, one of which is for driving the light-emitting structure on the same side thereof, and the other group of TFT units 41 passes through the via hole 11 and the other side of the drive electrode 5
  • One-to-one electrical connection for driving the other side of the light-emitting structure, at this time, through the pair of TFT driving circuits 4 Output the same or different video signals, can display the same or different content at the same time, realize double-sided independent display, further enrich the function of the double-sided display.
  • the driving circuit substrate 1 in this embodiment is preferably a non-transparent substrate, so that the double-sided display image does not interfere.
  • the front side light emitting structure 2 and the back side light emitting structure 3 in this embodiment There is no limit to the type, for example, active light-emitting structures such as LEDs, OLEDs, etc.; or passive light-emitting structures such as LCD and E-ink Alternatively, different light-emitting structures may be used, one side adopts an active light-emitting structure, and the other side adopts a passive light-emitting structure.
  • active light-emitting structures such as LEDs, OLEDs, etc.
  • passive light-emitting structures such as LCD and E-ink
  • different light-emitting structures may be used, one side adopts an active light-emitting structure, and the other side adopts a passive light-emitting structure.
  • the back light emitting structure 3 may be a light emitting structure prepared directly on the back of the driving circuit substrate 1, or may be a driving circuit substrate.
  • the light-emitting structure prepared on the back of the substrate is prepared on the other substrate, and the specific formation manner thereof is not limited.
  • the TFT driving circuit 4 can be disposed on the front surface of the substrate 1 and guided to the driving circuit substrate through the via hole 11 On the back, the back light-emitting structure 3 is driven by the driving electrode 5 on the back, as shown in FIG. 1; similarly, the TFT driving circuit 4 can also be disposed on the back surface of the substrate 1 through the through-hole 11 Leading to the front side of the driving circuit substrate 1, driving the front side light emitting structure 2 through the front driving electrode 5, as shown in FIG. Shown.
  • the above two driving modes have the same working principle and effect, and the embodiment does not have to be strictly limited.
  • the present invention provides one or two sets of TFT driving circuits 4 on one side of the driving circuit substrate 1, and a driving electrode 5 on the other side.
  • the TFT driving circuit 4 is led to the other side of the substrate 1 through the via hole 11 and electrically connected to the driving electrode 5, so that the TFT driving circuit 4 provided on the side of the driving circuit substrate 1 is provided.
  • the thickness is greatly reduced, the structure is simplified, the material cost is saved, and the performance is realized. Superior and low-cost effects; in addition, the dual-sided display drives pixel illumination through active active drive to support large displays.
  • the type of the double-sided light-emitting structure is not necessarily limited to the same type, and any combination can be made without limitation.
  • a method of manufacturing the above-described double-sided display screen is provided below. Referring to FIG. 3, the method includes the following steps:
  • step S101 a substrate is selected, and a plurality of via holes are formed on the substrate;
  • step S103 a front side light emitting structure is provided on the front surface of the substrate, and a back side light emitting structure is provided on the back side of the substrate.
  • step S101 of this embodiment The number and position of the via holes need to be set according to the preset number and position of the driving electrodes, and the number and position of the driving electrodes are in one-to-one correspondence with the number and positions of the pixels of the light emitting structure pre-configured on the side of the driving electrodes. .
  • step S102 only one set of TFT driving circuits may be provided, and the TFTs in the TFT driving circuit
  • the number of cells is the same as the number of pixels in the front and back lighting structures. At this time, as long as a signal is input to a group of TFT driving circuits, double-sided display can be realized, and the contents of the double-sided display are the same.
  • two sets of TFT driving circuits and TFTs in two sets of TFT driving circuits may be disposed.
  • the number of cells is the same as the number of pixels of the corresponding light-emitting structure.
  • the TFT driving circuit connected to the driving electrode through the via hole is used to drive the light emitting structure on one side of the driving electrode, and the other group of TFTs
  • the drive circuit is used to drive the illumination structure on the same side as itself.
  • the two sets of TFT driving circuits can respectively drive the front and back light emitting structures, so that the light emitting states of the front and back light emitting structures are independent of each other and do not interfere with each other.
  • the front side light emitting structure and the back side light emitting structure may both adopt an active light emitting type or a passive light emitting type light emitting structure, and may adopt an active light emitting structure on one side and a passive light emitting structure on the other side, for example, adopting In the combination of OLED/OLED, OLED/E-ink, OLED/LCD, etc., this embodiment can be used but is not limited to the above several combinations.
  • the order in which the TFT driving circuit is disposed on one side of the substrate and the driving electrodes are disposed on the other surface is not strictly limited.
  • the TFT driving circuit can be directly in the TFT after setting the TFT driving circuit.
  • a protective film is disposed on the surface of the driving circuit, and then the driving electrode and the corresponding light emitting structure are disposed on the other side of the substrate, and then the protective film on the TFT driving circuit is removed, and the TFT is A light emitting structure is disposed above the driving circuit.
  • the driving electrode is first set, a protective film is directly disposed on the surface of the driving electrode after the driving electrode is set, and then a TFT is disposed on the other side of the substrate.
  • the driving circuit and the light emitting structure are then removed from the protective film above the driving electrode, and a light emitting structure is disposed on the driving electrode. In this way, TFT can be protected during the preparation process.
  • the drive circuit or drive electrode is protected from external environmental interference.
  • the double-sided display screen described above can be prepared by the method provided by the present invention, and the method respectively provides TFTs on both sides of the driving circuit substrate Driving circuit and driving electrode, and front and back light emitting structures, so that TFTs disposed on the same side of the substrate
  • the driving circuit can drive the pixel illumination of the light-emitting structure on both sides of the substrate, so that the front and back light-emitting structures can display the same or different contents, and realize double-sided display or even double-sided independent display; and the method does not need to limit the type of the double-sided light-emitting structure.
  • the same type the application is more extensive.
  • the method only needs to be prepared on one surface of the driving circuit substrate TFT
  • the driving circuit is only required to prepare the driving electrode, so that the preparation process is greatly simplified and the cost is saved.
  • the double-sided display screen drives the pixel illumination through the active active driving mode, and can support a large-sized display screen, suitable for widely used.

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Abstract

一种双面显示屏,包括一含有多个导通孔(11)的驱动电路基板(1),在驱动电路基板(1)的正面和背面分别设有正面发光结构(2)和背面发光结构(3);在驱动电路基板(1)的正面或背面设有TFT驱动电路(4),用于驱动正面发光结构(2)和背面发光结构(3);在驱动电路基板(1)未设有TFT驱动电路(4)的一面设有多个驱动电极(5);所述驱动电极(5)通过所述导通孔(11)与所述TFT驱动电路(4)中的TFT单元(41)对应连接。本发明利用设置于驱动电路基板一侧的TFT驱动电路驱动基板两侧的发光结构,可使显示屏能够正面和背面显示相同或者不同内容,实现双面独立显示,互不干扰。

Description

一种双面显示屏及其制造方法 技术领域
本发明属于显示技术领域,特别涉及一种双面显示屏及其制造方法。
背景技术
在显示技术领域,双面显示屏已应用于很多商业及家庭,如:笔记本的双面显示器容许讨论双方同时看到显示内容,双面显示广告屏可让来客在各个方向浏览内容,另外还有多种双面显示的平板显示器、电子阅读器、数字标牌、电子通讯器材、收银设施、窗口问询设施、展览馆等公共场所的广告播放设施等等。现有的商用双面显示屏大多采用两个独立显示屏背对背组装而成,采用两个驱动电路分别驱动两个显示屏,结构复杂、成本高、整体尺寸厚。而能够实现双面显示的单个显示屏也具有如下不足:显示屏正面和背面的显示面板类型要相同,例如,双面均为主动发光的面板,如 LED 、 OLED 面板,或均为被动发光的面板,如 LCD 面板,使其应用受到较大限制。因此,需要提供一种新型的双面显示面板,以克服上述问题,为用户提供更好的感官体验,满足更多需求。
技术问题
本发明的目的 在于提供一种 双面显示屏 ,旨在解决传统双面显示屏结构复杂、 成本高、整体尺寸厚 及应用受限的问题。
技术解决方案
本发明是这样实现的, 一种双面显示屏,包括含有多个导通孔的驱动电路基板,在所述驱动电路基板的正面和背面分别设有正面发光结构和背面发光结构;
在所述驱动电路基板的正面或背面设有 TFT 驱动电路,用于驱动所述正面发光结构和背面发光结构;
在所述驱动电路基板未设有所述 TFT 驱动电路的一面设有多个驱动电极;
所述驱动电极通过所述导通孔与所述 TFT 驱动电路中的 TFT 单元对应电连接。
本发明的目的 在于提供 一种双面显示屏的制造方法,包括下述步骤:
选取一基板,在所述基板上开设多个导通孔;
在所述基板的正面或背面设置 TFT 驱动电路,在未设有所述 TFT 驱动电路的一面设置与所述导通孔一一对应的驱动电极,并使所述驱动电极与所述 TFT 驱动电路的 TFT 单元通过所述导通孔对应电连接;
在所述基板的正面设置正面发光结构,在所述基板的背面设置背面发光结构。
本发明在驱动电路基板的一面设置 TFT 驱动电路,并在其另一面设置驱动电极,并将 TFT 驱动电路通过导通孔引向基板的另一面并与驱动电极电连接,使设置于驱动电路基板同侧的 TFT 驱动电路顺利驱动基板两侧的发光结构,其整体厚度得到大幅度减小,且结构更为简化,节约了材料成本,同时实现了性能优越及低成本的效果,适合广泛应用于各种双面显示设备;另外,双面发光结构的类型不必局限于相同类型,可以进行任意组合,不具有局限性。而且,该双面显示屏通过主动有源驱动方式驱动像素发光,能够支持大尺寸显示屏。
有益效果
同样的,本发明提供的制造方法在驱动电路基板的一侧设置 TFT 驱动电路,在另一侧设置驱动电极,并在其两侧设置两个发光结构,不仅实现了双面显示,与传统的在基板两侧或两个基板上设置驱动电路的方法相比,大幅度简化了制造工艺,并简化了双面显示屏的结构,同时,该方法不需限制双面发光结构的类型,设计灵活,应用范围广。
附图说明
图 1 是本发明实施例双面显示屏的结构示意图(一);
图 2 是本发明实施例双面显示屏的结构示意图(二);
图 3 是本发明实施例双面显示屏的制作流程图。
本发明的实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
以下通过具体实施例对本发明进行更加详细的说明。
图 1 示出了本发明实施例提供的双面显示屏的结构示意图,为了便于说明,仅示出了与本实施例相关的部分。
该双面显示屏包括一驱动电路基板 1 ,其中含有多个导通孔 11 ,在驱动电路基板 1 的正面和背面分别设有正面发光结构 2 和背面发光结构 3 ,驱动电路基板 1 的正面或背面还设有 TFT 驱动电路 4 。当然,该 TFT 驱动电路 4 设置于正面发光结构 2 或背面发光结构 3 与驱动电路基板 1 之间,并且,该 TFT 驱动电路 4 包括多个 TFT 单元 41 。另外,本实施例在驱动电路基板 1 的另一面(不设有 TFT 驱动电路 4 的一面)设置多个驱动电极 5 ,该驱动电极 5 与导通孔 11 一一对位设置,并与上述的 TFT 驱动电路 4 的 TFT 单元 41 通过相应的导通孔 11 电性连接。。上述 TFT 驱动电路 4 一方面用于驱动与其同侧的发光结构,而另一方面则通过与之电连接的驱动电极 5 驱动位于驱动电路基板 1 另一侧的发光结构。作为一种电性连接的方式,可以在导通孔 11 中填充导电介质,通过导电介质将 TFT 单元 41 和驱动电极 5 连接起来。
在本实施例中, TFT 驱动电路 4 可以仅设一组,在显示屏工作时,通过该组 TFT 驱动电路 4 同时驱动正面和背面发光结构,此时正面和背面发光结构可同时显示相同内容,实现双面显示。
而作为本实施例的一种优选的方案, TFT 驱动电路 4 可以共设两组,仍然设置于驱动电路基板 1 的相同侧,其中一组用于驱动与其同侧的发光结构,而另一组的 TFT 单元 41 则通过导通孔 11 与另一侧的驱动电极 5 一一电连接,用于驱动另一侧的发光结构,此时,通过对两组 TFT 驱动电路 4 输出相同或不同视频信号,可以同时显示相同或不同的内容,实现双面独立显示,进一步丰富双面显示屏的功能。
进一步的,本实施例中的驱动电路基板 1 优选为非透光基板,使双面显示图像不相干扰。
进一步的,本实施例中的正面发光结构 2 和背面发光结构 3 的类型不限,例如,可以均采用主动式发光结构,如 LED 、 OLED 等;或均采用被动式发光结构,如 LCD 、 E-ink 等,也可以分别采用不同的发光结构,一面采用主动式发光结构,另一面采用被动式发光结构。
进一步的,背面发光结构 3 可以是直接在驱动电路基板 1 背部制备的发光结构,也可以是在驱动电路基板 1 的背部粘贴的制备在其他基板上的发光结构,其具体形成方式不需限制。
可以理解, TFT 驱动电路 4 可以设置于基板 1 的正面,并通过导通孔 11 引向驱动电路基板 1 背部,通过背部的驱动电极 5 驱动背面发光结构 3 ,如图 1 所示;同样, TFT 驱动电路 4 也可以设置于基板 1 的背面,通过导通孔 11 引向驱动电路基板 1 的正面,通过正面的驱动电极 5 驱动正面发光结构 2 ,如图 2 所示。上述两种驱动方式的工作原理和效果相同,本实施例不必严格限制。
本发明在驱动电路基板 1 的一面设置一组或两组 TFT 驱动电路 4 ,在另一面设置驱动电极 5 ,并将 TFT 驱动电路 4 通过导通孔 11 引向基板 1 的另一面并与驱动电极 5 电连接,使设置于驱动电路基板 1 一侧的 TFT 驱动电路 4 顺利驱动基板两侧的发光结构,实现双面显示甚至实现双面独立显示,与传统显示屏相比,其厚度得到大幅度减小,并且结构更为简化,节约了材料成本,同时实现了性能优越及低成本的效果;另外,该双面显示屏通过主动有源驱动方式驱动像素发光,能够支持大尺寸显示屏。另外,双面发光结构的类型不必局限于相同类型,可以进行任意组合,不具有局限性。
以下提供一种制造上述的双面显示屏的制造方法,参考附图 3 ,该方法包括下述步骤:
在步骤 S101 中,选取一基板,在基板上开设多个导通孔;
该基板具体可以采用非透明的玻璃基板,以防止双面显示图像发生干扰。
在步骤 S102 中,在基板的正面或背面设置 TFT 驱动电路,在未设有 TFT 驱动电路的一面设置与导通孔一一对应的驱动电极,并使驱动电极与 TFT 驱动电路的 TFT 单元通过导通孔对应电连接;
在步骤 S103 中,在基板的正面设置正面发光结构,在基板的背面设置背面发光结构。
在本实施例的步骤 S101 中,导通孔的数量和位置需要根据预设的驱动电极的数量和位置进行设置,而驱动电极的数量和位置则与预配置在驱动电极一侧的发光结构的像素数量和位置一一对应。
进一步的,在步骤 S102 中,可以仅设一组 TFT 驱动电路,该 TFT 驱动电路中 TFT 单元的数量则与正面和背面发光结构的像素数量相同。此时只要向一组 TFT 驱动电路输入信号,即可实现双面显示,其双面显示的内容相同。
优选的,在步骤 S102 中,可以设置两组 TFT 驱动电路,两组 TFT 驱动电路中 TFT 单元的数量则与各自对应的发光结构的像素数量相同。其中,通过导通孔与驱动电极相连的 TFT 驱动电路用于驱动位于驱动电极一侧的发光结构,另一组 TFT 驱动电路则用于驱动与其自身同侧的发光结构。这样,两组 TFT 驱动电路可分别驱动正面和背面发光结构,使正面和背面发光结构的发光状态相互独立,互不干扰。
另外, TFT 驱动电路和驱动电极只要分别设于基板的相异侧即可,其具体的位置不必严格限制。
在本实施例中,正面发光结构和背面发光结构可以均采用主动发光式或者被动式发光式的发光结构,还可以一面采用主动发光结构,另一面采用被动式发光结构,例如,采用 OLED/OLED , OLED/E-ink , OLED/LCD 等组合方式,本实施例可采用但不必局限于上述几种组合方式。
可以理解,该方法在完成正面和背面发光结构的制备或装配后,还可以进行驱动电路连接及封装的工序,将 TFT 驱动电路连接至双面显示屏的其他控制电路中,以将电信号输送给 TFT 驱动电路,对发光结构的像素进行发光状态的控制,以输出图像。当然,也可以暂不进行驱动电路连接及封装的工序,待后续组装产品时再统一进行驱动电路连接及封装。
进一步的,在基板的一面设置 TFT 驱动电路和在另一面设置驱动电极的先后顺序不必严格限制。
进一步的,若先设置 TFT 驱动电路,可以在设置 TFT 驱动电路后直接在 TFT 驱动电路表面设置保护膜,然后在基板另一侧设置驱动电极和相应的发光结构,然后去除 TFT 驱动电路之上的保护膜,并在 TFT 驱动电路之上设置发光结构。同样,若先设置驱动电极,则在设置好驱动电极后直接在驱动电极表面设置保护膜,然后在基板另一侧设置 TFT 驱动电路及发光结构,然后去除驱动电极之上的保护膜,并在驱动电极之上设置发光结构。这样,可以在制备过程中保护 TFT 驱动电路或驱动电极免受外部环境干扰。
通过本发明提供的方法可以制备出上述的双面显示屏,该方法在驱动电路基板的两面分别设置 TFT 驱动电路和驱动电极以及正面和背面发光结构,使配置于基板同侧的 TFT 驱动电路可驱动基板两侧发光结构的像素发光,可以使正面和背面发光结构显示相同或不同的内容,实现双面显示乃至双面独立显示;并且该方法不必将双面发光结构的类型局限于相同类型,应用更为广泛。并且,该方法只需在驱动电路基板的一个表面上制备 TFT 驱动电路,而另一面只需制备驱动电极,使得制备工艺得到大幅度简化,且节约了成本;另外,该双面显示屏通过主动有源驱动方式驱动像素发光,能够支持大尺寸显示屏,适合广泛应用。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种双面显示屏,其特征在于,包括含有多个导通孔的驱动电路基板,在所述驱动电路基板的正面和背面分别设有正面发光结构和背面发光结构;
    在所述驱动电路基板的正面或背面设有 TFT 驱动电路,用于驱动所述正面发光结构和背面发光结构;
    在所述驱动电路基板未设有所述 TFT 驱动电路的一面设有多个驱动电极;
    所述驱动电极通过所述导通孔与所述 TFT 驱动电路中的 TFT 单元对应电连接。
  2. 如权利要求 1 所述的双面显示屏,其特征在于,所述 TFT 驱动电路共设两组,其中一组中的 TFT 单元通过所述导通孔与所述驱动电极一一对应电性连接。
  3. 如权利要求 1 或 2 所述的双面显示屏,其特征在于,所述驱动电路基板为非透光的驱动电路基板。
  4. 如权利要求 1 或 2 所述的双面显示屏,其特征在于,所述导通孔中填充有导电介质,所述 TFT 单元与所述驱动电极通过所述导电介质进行电连接。
  5. 如权利要求 1 或 2 所述的双面显示屏,其特征在于,所述正面发光结构和背面发光结构均为主动式发光结构或被动式发光结构。
  6. 如权利要求 1 或 2 所述的双面显示屏,其特征在于,所述正面发光结构和背面发光结构分别为主动式发光结构和被动式发光结构。
  7. 一种双面显示屏的制造方法,其特征在于,包括下述步骤:
    选取一基板,在所述基板上开设多个导通孔;
    在所述基板的正面或背面设置 TFT 驱动电路,在未设有所述 TFT 驱动电路的一面设置与所述导通孔一一对应的驱动电极,并使所述驱动电极与所述 TFT 驱动电路的 TFT 单元通过所述导通孔对应电连接;
    在所述基板的正面设置正面发光结构,在所述基板的背面设置背面发光结构。
  8. 如权利要求 7 所述的制造方法,其特征在于,所述 TFT 驱动电路共设两组,并使其中一组的 TFT 单元通过所述导通孔与所述驱动电极一一对应电性连接。
  9. 如权利要求 7 或 8 所述的制造方法,其特征在于,所述正面发光结构和背面发光结构均为主动式发光结构或被动式发光结构。
  10. 如权利要求 7 或 8 所述的制造方法,其特征在于,所述正面发光结构和背面发光结构分别为主动式发光结构和被动式发光结构。
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