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WO2009060693A1 - デバイスおよびデバイス製造方法 - Google Patents

デバイスおよびデバイス製造方法 Download PDF

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Publication number
WO2009060693A1
WO2009060693A1 PCT/JP2008/068544 JP2008068544W WO2009060693A1 WO 2009060693 A1 WO2009060693 A1 WO 2009060693A1 JP 2008068544 W JP2008068544 W JP 2008068544W WO 2009060693 A1 WO2009060693 A1 WO 2009060693A1
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WO
WIPO (PCT)
Prior art keywords
substrate
intermediate layer
main component
functional intermediate
bonding functional
Prior art date
Application number
PCT/JP2008/068544
Other languages
English (en)
French (fr)
Inventor
Jun Utsumi
Takayuki Goto
Kensuke Ide
Hideki Takagi
Masahiro Funayama
Original Assignee
Mitsubishi Heavy Industries, Ltd.
National Institute Of Advanced Industrial Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries, Ltd., National Institute Of Advanced Industrial Science And Technology filed Critical Mitsubishi Heavy Industries, Ltd.
Priority to US12/741,916 priority Critical patent/US20100276723A1/en
Priority to CA2704610A priority patent/CA2704610C/en
Priority to CN2008801145566A priority patent/CN101849276B/zh
Priority to KR1020107009745A priority patent/KR101240063B1/ko
Priority to EP08846882.2A priority patent/EP2207195A4/en
Publication of WO2009060693A1 publication Critical patent/WO2009060693A1/ja
Priority to US13/797,521 priority patent/US8936998B2/en

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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06—Joining glass to glass by processes other than fusing
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract

　本発明によるデバイスは、主成分が二酸化ケイ素である第１基板と、主成分がシリコンあるいは化合物半導体あるいは二酸化ケイ素あるいはフッ化物のいずれかである第２基板と、第１基板と第２基板との間に配置される接合機能中間層とを備えている。第１基板は、接合機能中間層を介して第１基板のスパッタリングされた第１表面と第２基板のスパッタリングされた第２表面とを接触させる常温接合により第２基板に接合されている。このとき、接合機能中間層の材料は、第１基板の主成分と異なり、第２基板の主成分と異なり、酸化物あるいはフッ化物あるいは窒化物のうちの光透過性を有する材料から選択される。
PCT/JP2008/068544 2007-11-08 2008-10-14 デバイスおよびデバイス製造方法 WO2009060693A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US12/741,916 US20100276723A1 (en) 2007-11-08 2008-10-14 Device and device manufacture method
CA2704610A CA2704610C (en) 2007-11-08 2008-10-14 Device and device manufacture method
CN2008801145566A CN101849276B (zh) 2007-11-08 2008-10-14 一种利用光的设备及其制造方法
KR1020107009745A KR101240063B1 (ko) 2007-11-08 2008-10-14 디바이스 및 디바이스 제조 방법
EP08846882.2A EP2207195A4 (en) 2007-11-08 2008-10-14 DEVICE AND METHOD FOR PRODUCING THE DEVICE
US13/797,521 US8936998B2 (en) 2007-11-08 2013-03-12 Manufcaturing method for room-temperature substrate bonding

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007290922A JP4348454B2 (ja) 2007-11-08 2007-11-08 デバイスおよびデバイス製造方法
JP2007-290922 2007-11-08

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/741,916 A-371-Of-International US20100276723A1 (en) 2007-11-08 2008-10-14 Device and device manufacture method
US13/797,521 Division US8936998B2 (en) 2007-11-08 2013-03-12 Manufcaturing method for room-temperature substrate bonding

Publications (1)

Publication Number Publication Date
WO2009060693A1 true WO2009060693A1 (ja) 2009-05-14

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ID=40625594

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Application Number Title Priority Date Filing Date
PCT/JP2008/068544 WO2009060693A1 (ja) 2007-11-08 2008-10-14 デバイスおよびデバイス製造方法

Country Status (8)

Country Link
US (2) US20100276723A1 (ja)
EP (1) EP2207195A4 (ja)
JP (1) JP4348454B2 (ja)
KR (1) KR101240063B1 (ja)
CN (1) CN101849276B (ja)
CA (1) CA2704610C (ja)
TW (1) TWI391316B (ja)
WO (1) WO2009060693A1 (ja)

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JP5889411B2 (ja) * 2011-08-30 2016-03-22 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 固相拡散または相変態を用いた接続層による恒久的なウエハ結合方法
CN102693996B (zh) * 2012-06-20 2015-03-11 中国科学院上海高等研究院 图像传感器
CN105027436B (zh) 2013-02-19 2018-04-24 日本碍子株式会社 复合基板、弹性波装置及弹性波装置的制造方法
JP2015064321A (ja) 2013-09-26 2015-04-09 キヤノン株式会社 流路デバイス
CN103692119A (zh) * 2013-12-17 2014-04-02 南京理工大学 基于视觉传感的电子束深熔焊熔池动态监测装置
CH711295B1 (fr) * 2015-07-06 2019-11-29 Cartier Int Ag Procédé de fixation par assemblage anodique.
JP6427714B2 (ja) 2016-03-25 2018-11-21 日本碍子株式会社 接合体および弾性波素子
TWI780103B (zh) * 2017-05-02 2022-10-11 日商日本碍子股份有限公司 彈性波元件及其製造方法
JP7287772B2 (ja) * 2018-11-26 2023-06-06 ランテクニカルサービス株式会社 透明基板の接合方法及び積層体
JP7222493B2 (ja) * 2021-04-28 2023-02-15 日本電産マシンツール株式会社 半導体装置の製造方法、及び常温接合装置

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EP2207195A1 (en) 2010-07-14
CA2704610A1 (en) 2009-05-14
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TW200927636A (en) 2009-07-01
US20130213561A1 (en) 2013-08-22
US20100276723A1 (en) 2010-11-04
JP4348454B2 (ja) 2009-10-21
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US8936998B2 (en) 2015-01-20
JP2009117707A (ja) 2009-05-28
KR101240063B1 (ko) 2013-03-06

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