[go: up one dir, main page]

FI20106359A7 - Menetelmä ultraäänianturin valmistamiseksi ja anturirakenne - Google Patents

Menetelmä ultraäänianturin valmistamiseksi ja anturirakenne Download PDF

Info

Publication number
FI20106359A7
FI20106359A7 FI20106359A FI20106359A FI20106359A7 FI 20106359 A7 FI20106359 A7 FI 20106359A7 FI 20106359 A FI20106359 A FI 20106359A FI 20106359 A FI20106359 A FI 20106359A FI 20106359 A7 FI20106359 A7 FI 20106359A7
Authority
FI
Finland
Prior art keywords
wafer
sensor
manufacturing
ultrasonic
polysilicon layer
Prior art date
Application number
FI20106359A
Other languages
English (en)
Swedish (sv)
Other versions
FI20106359A0 (fi
FI20106359L (fi
Inventor
Jaakko Saarilahti
Original Assignee
Teknologian Tutkimuskeskus Vtt Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teknologian Tutkimuskeskus Vtt Oy filed Critical Teknologian Tutkimuskeskus Vtt Oy
Priority to FI20106359A priority Critical patent/FI20106359L/fi
Publication of FI20106359A0 publication Critical patent/FI20106359A0/fi
Priority to PCT/FI2011/051083 priority patent/WO2012085335A1/en
Publication of FI20106359A7 publication Critical patent/FI20106359A7/fi
Publication of FI20106359L publication Critical patent/FI20106359L/fi

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021Transducers for transforming electrical into mechanical energy or vice versa
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01HMEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H15/00Measuring mechanical or acoustic impedance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01HMEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H9/00Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by using radiation-sensitive means, e.g. optical means
    • G01H9/008Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by using radiation-sensitive means, e.g. optical means by using ultrasonic waves
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L11/00Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
    • G01L11/04Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by acoustic means
    • G01L11/06Ultrasonic means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802Details

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Micromachines (AREA)

Abstract

Keksintö koskee menetelmää ultraäänianturin (1) valmistamiseksi, joka menetelmä käsittää vaiheet, joissa muodostetaan ainakin yhden ultraäänimuuntimen (200) ja ultraääniontelon (4) sisältävä ensimmäinen kiekko (111, laitekiekko) tavanomaisella piitekniikalla. Keksinnön mukaisesti se sisältää seuraavat vaiheet: liitetään ensimmäiseen kiekkoon (111) toinen kiekko (112), joka sisältää substraatin (108) ja polypiikerroksen (201), liitetään toinen kiekko (112) ensimmäiseen kiekkoon (111) niin, että polypiikerros (201) muodostaa liitonpinnan, ja toisen kiekon (112) substraatti (109) etsataan pois ontelon (4) alueelta, jotta saadaan muodostetuksi anturikalvo (201) polypiikerroksesta (111).
FI20106359A 2010-12-21 2010-12-21 Menetelmä ultraäänianturin valmistamiseksi ja anturirakenne FI20106359L (fi)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20106359A FI20106359L (fi) 2010-12-21 2010-12-21 Menetelmä ultraäänianturin valmistamiseksi ja anturirakenne
PCT/FI2011/051083 WO2012085335A1 (en) 2010-12-21 2011-12-07 Method for manufacturing an ultrasonic sensor and a sensor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20106359A FI20106359L (fi) 2010-12-21 2010-12-21 Menetelmä ultraäänianturin valmistamiseksi ja anturirakenne

Publications (3)

Publication Number Publication Date
FI20106359A0 FI20106359A0 (fi) 2010-12-21
FI20106359A7 true FI20106359A7 (fi) 2012-06-22
FI20106359L FI20106359L (fi) 2012-06-22

Family

ID=43415049

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20106359A FI20106359L (fi) 2010-12-21 2010-12-21 Menetelmä ultraäänianturin valmistamiseksi ja anturirakenne

Country Status (2)

Country Link
FI (1) FI20106359L (fi)
WO (1) WO2012085335A1 (fi)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6338499B2 (ja) * 2014-09-24 2018-06-06 三菱電機株式会社 異物付着検知装置及び異物付着検知方法
FI128447B (fi) 2016-04-26 2020-05-15 Teknologian Tutkimuskeskus Vtt Oy Ohutkalvokerroksen analysointiin liittyvä laite ja sen valmistusmenetelmä
GB2561613B (en) * 2017-04-21 2019-05-08 The Technology Partnership Plc Acoustic Sensor
WO2020072920A1 (en) 2018-10-05 2020-04-09 Knowles Electronics, Llc Microphone device with ingress protection
WO2020072904A1 (en) 2018-10-05 2020-04-09 Knowles Electronics, Llc Acoustic transducers with a low pressure zone and diaphragms having enhanced compliance
CN112789239A (zh) 2018-10-05 2021-05-11 美商楼氏电子有限公司 形成包括褶皱的mems振膜的方法
CN112763052B (zh) * 2020-12-16 2022-04-08 华中科技大学 一种反电子监测的宽带声波传感器
US12240748B2 (en) 2021-03-21 2025-03-04 Knowles Electronics, Llc MEMS die and MEMS-based sensor
US11528546B2 (en) 2021-04-05 2022-12-13 Knowles Electronics, Llc Sealed vacuum MEMS die
US11540048B2 (en) 2021-04-16 2022-12-27 Knowles Electronics, Llc Reduced noise MEMS device with force feedback
FI131134B1 (fi) 2021-04-20 2024-10-23 Teknologian Tutkimuskeskus Vtt Oy Ultraäänianturilaite ja menetelmä lähettää ultraäääntä
US11649161B2 (en) 2021-07-26 2023-05-16 Knowles Electronics, Llc Diaphragm assembly with non-uniform pillar distribution
US11772961B2 (en) 2021-08-26 2023-10-03 Knowles Electronics, Llc MEMS device with perimeter barometric relief pierce
US11780726B2 (en) 2021-11-03 2023-10-10 Knowles Electronics, Llc Dual-diaphragm assembly having center constraint
CN114630236B (zh) * 2022-02-28 2024-09-10 歌尔微电子股份有限公司 振动传感器和电子设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7489593B2 (en) * 2004-11-30 2009-02-10 Vermon Electrostatic membranes for sensors, ultrasonic transducers incorporating such membranes, and manufacturing methods therefor
US7037746B1 (en) * 2004-12-27 2006-05-02 General Electric Company Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane
FI20075879A0 (fi) * 2007-12-05 2007-12-05 Valtion Teknillinen Laite paineen, äänenpaineen vaihtelun, magneettikentän, kiihtyvyyden, tärinän ja kaasun koostumuksen mittaamiseksi

Also Published As

Publication number Publication date
WO2012085335A1 (en) 2012-06-28
FI20106359A0 (fi) 2010-12-21
FI20106359L (fi) 2012-06-22

Similar Documents

Publication Publication Date Title
FI20106359A7 (fi) Menetelmä ultraäänianturin valmistamiseksi ja anturirakenne
WO2007079454A3 (en) Pressure sensor with silicon frit bonded cap
TWI669268B (zh) 微機電系統封裝及其形成方法
TW200733318A (en) Wafer-level package structure and production method therefor
EP2267796A3 (en) Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof
TW200732243A (en) Sensor device and production method therefor
EP2871685A3 (en) Flexible display and manufacturing method thereof
WO2011109146A3 (en) Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
WO2011083160A3 (de) Mikroelektromechanisches halbleiterbauelement und verfahren zu seiner herstellung
EP2202526A3 (en) Mems sensor and mems sensor manufacture method
EP1860417A3 (en) A pressure sensor having a chamber and a method for fabricating the same
JP5890904B2 (ja) 機械的に柔軟なシリコン基板の製造方法
WO2009142391A3 (ko) 발광소자 패키지 및 그 제조방법
WO2013003784A3 (en) Process for a sealed mems device with a portion exposed to the environment
WO2009148253A3 (ko) 반도체 발광소자 제조용 지지기판 및 상기 지지기판을 이용한 반도체 발광소자
JP2012085239A5 (fi)
FR2963982B1 (fr) Procede de collage a basse temperature
EP2704216A3 (en) Flexible semiconductor devices and methods of manufacturing the same
JP2010267899A5 (fi)
WO2009060693A1 (ja) デバイスおよびデバイス製造方法
EP2599747A3 (en) Method of manufacturing resonant transducer
WO2010138267A3 (en) Thin semiconductor device having embedded die support and methods of making the same
EP2226620A3 (en) Semiconductor Sensor and Method of Manufacturing the Same
JP2013070112A5 (fi)
TW200710946A (en) Method for manufacturing semiconductor apparatus and the semiconductor apparatus

Legal Events

Date Code Title Description
PC Transfer of assignment of patent

Owner name: TEKNOLOGIAN TUTKIMUSKESKUS VTT

Free format text: TEKNOLOGIAN TUTKIMUSKESKUS VTT

FD Application lapsed