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WO2009006784A1 - Sol de dioxyde de silicium modifié, son procédé de fabrication et son utilisation - Google Patents

Sol de dioxyde de silicium modifié, son procédé de fabrication et son utilisation Download PDF

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Publication number
WO2009006784A1
WO2009006784A1 PCT/CN2008/001259 CN2008001259W WO2009006784A1 WO 2009006784 A1 WO2009006784 A1 WO 2009006784A1 CN 2008001259 W CN2008001259 W CN 2008001259W WO 2009006784 A1 WO2009006784 A1 WO 2009006784A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
silica
surfactant
modified silica
silica sol
Prior art date
Application number
PCT/CN2008/001259
Other languages
English (en)
Chinese (zh)
Inventor
Jery Guodong Chen
Peter Weihong Song
Daisy Ying Yao
Ephant Chengbing Song
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics (Shanghai) Co., Ltd filed Critical Anji Microelectronics (Shanghai) Co., Ltd
Priority to CN2008800233413A priority Critical patent/CN101754929B/zh
Publication of WO2009006784A1 publication Critical patent/WO2009006784A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/146—After-treatment of sols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/28—Compounds of silicon
    • C09C1/30—Silicic acid
    • C09C1/3081—Treatment with organo-silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing

Definitions

  • the present invention relates to a modified silica sol, a process for its preparation, and its use in a polishing fluid.
  • the polishing mechanism of the chemical mechanical polishing (CMP) polishing liquid on the semiconductor device is:
  • the components in the polishing liquid remove the metal and non-metal in the semiconductor device by chemical mechanical action, thereby further flattening the effect.
  • the CMP slurry consists of three main components: abrasives, chemicals, and dispersion media. Common dispersion media are water or alcohols such as ethanol, methanol, glycerin, and the like.
  • Chemical reagents are the most important components in CMP polishing fluids. These chemicals can be classified into complexing agents (or rate enhancers), corrosion inhibitors, oxidants, surfactants, rheology modifiers, and pH adjustments. Agents, etc.
  • Another important component of the CMP slurry is the abrasive, which are inorganic particles and organic polymer particles.
  • CMP polishing fluids There are many types of abrasives used as CMP polishing fluids, mostly oxide particles or organic particles such as silica, alumina, zirconia, yttria, iron oxide, polystyrene granules and/or mixtures thereof. . These particles have different hardness and surface chemistry, which results in different polishing effects on the substrate of the semiconductor device, with alumina and silicon dioxide being the most used polishing abrasives.
  • Silica can be classified into fumed silica, precipitated silica, and silica sol according to the preparation method.
  • the fumed silica and the precipitated silica are mostly aggregates of silica particles, and the products thereof are mostly silica powder.
  • these two kinds of silica are used in a CMP polishing liquid, they are often required. A lot of energy is needed to disperse the silica particles.
  • the oxidized brick sol has the advantages of uniform dispersion, controllable particle size and more surface functional groups, and has gradually become a
  • silica sol particles have a particle diameter of from 5 to 150 nm, and the dispersion medium is water, ethanol or other organic solvent.
  • the surface of the silica particles is rich in hydroxyl groups, and the number of hydroxyl groups is 3-8#/nm 2 . Therefore, the silica particles have strong hydrophilicity and polarity and can be stably dispersed in water.
  • the hydroxyl group on the surface of the silica particles has strong activity, can generate ionization at a higher pH, and can also react with some chemicals.
  • the silane coupling agent is the most commonly used silica particle modifier, and its modification activity is high and the reaction conditions are mild.
  • the silicon germanium coupling agent has a silicon oxyhydroxide group, which can undergo hydrolysis and polycondensation reaction with the hydroxyl group on the surface of the silica particle, thereby grafting the organic segment on the silicon coupling agent to the silica particle. Surface, changing the polarity of the surface of the silica particles.
  • the polishing slurry is specially treated to obtain a special polishing performance, and some patents have revealed this aspect of the research.
  • the patent document US Pat. No. 6,646,348 discloses a silicon germanium coupling agent as a component of a polishing liquid which is hydrolyzed to form an oligomer and is mixed with an abrasive and other chemical agents in the polishing liquid to obtain a lower The polishing rate of TEOS and Ta, and a better polished surface.
  • Patent document US6656241 discloses a dichlorodimethylsilane-modified silica aggregate and is applied to a Cu polishing liquid, and the silica aggregate is modified to be well dispersed in the polishing liquid, and Cu
  • the polishing rate and selectivity of Ta and Ta are affected by the modification treatment.
  • US Pat. No. 6,582,623 discloses a polishing slurry for modifying abrasives, dispersing the silane coupling agent directly with the abrasive.
  • the body phase is mixed and then configured as a polishing liquid, which can be applied to various wafer surfaces such as polishing ⁇ , Cu, etc.
  • An object of the present invention is to disclose a modified disilica sol which is capable of exerting a significant influence on the polishing performance of a polishing liquid.
  • an epoxy group-containing silane coupling agent is bonded to the surface of the silica.
  • the epoxy group-containing silicon germanium coupling agent may be selected from the group consisting of Y-glycidoxypropyltrimethoxysilane, hydrazine-glycidoxypropyldimethoxysilane, Y-shrinkage Glycidoxypropyltriethoxysilane, Y-glycidoxypropyldiethoxysilane or Y-glycidoxypropylchlorosilane, etc., preferably Y-glycidoxypropyl Trimethoxysilane.
  • the modified silica sol preferably has a particle diameter of 10 to 500 nm, more preferably 10 to 150 nm.
  • Another object of the present invention is to disclose a method for preparing a modified silica sol of the present invention, which comprises the steps of: mixing a silica sol, a surfactant, and a silane coupling agent containing an epoxy group; After that, the modification reaction can be carried out.
  • the epoxy group-containing silane coupling agent may be selected from the group consisting of Y-glycidoxypropyltrimethoxysilane and Y-glycidoxypropyldimethoxysilane. Yttrium, Y-glycidoxypropyltriethoxysilane, Y -glycidoxypropyldiethoxysilane or hydrazine-glycidoxypropylsilane, preferably hydrazine - glycidoxypropyltrimethoxysilane.
  • the epoxy group-containing silicon germanium coupling agent is preferably used in an amount of from 0.02 to 1% by mass, more preferably from 0.2 to 0.5% by mass based on the mass% of the silica sol.
  • a surfactant is further added to the reactant for the purpose of improving the modifier Dispersibility in water and compatibility with silica sol particles.
  • the surfactant may be selected from the group consisting of anionic surfactants, cationic surfactants, nonionic surfactants, and zwitterionic surfactants. Among them, polyacrylic acid, polyethylene glycol, betaine or dodecyl ammonium bromide is preferred.
  • the surfactant is preferably used in an amount of 0.01 to 1% by mass based on the total amount of the reactants, more preferably 0.01 to 0.1% by mass.
  • the modification temperature may generally be from 20 ° C to 100 ° C, preferably from 20 to 70 ° C; the modification time may generally be from 1 hour to 24 hours, or even longer, to facilitate
  • the reaction is carried out sufficiently, preferably 2 to 24 hours, more preferably 2 to 7 hours;
  • the pH environment of the reaction may generally be 1 to 14, preferably 2 to 12, more preferably 7 to 12, Under alkaline conditions, it is more conducive to solving the problem that silica is easy to gel.
  • hydrochloric acid, nitric acid, sulfuric acid, sodium hydroxide, potassium hydroxide, ammonia water, organic amine, etc. are generally used to adjust the pH of the solution. A small amount of water can be added during the preparation.
  • a further object of the invention is to disclose a polishing fluid comprising the modified silica sol of the invention.
  • the hydrophilicity of the surface of the silica particles can be changed.
  • the grafting of the epoxy groups on the surface of the silica particles can change the interaction between the silica particles and the surface of the wafer and the polishing pad, thereby affecting the final properties of the polishing liquid.
  • the polishing liquid may contain other conventional additives in the art.
  • the reagents and starting materials used in the present invention are commercially available.
  • the positive progress of the present invention is as follows:
  • the surface of the silica particles is grafted with an epoxy group, which changes the hydrophilicity of the silica particles on the one hand, and changes on the other hand.
  • the CMP polishing solution prepared by using the modified silica described in this patent can have a higher polishing rate of TEOS and BD, and has little effect on the polishing of Ta and Cu.
  • Fig. 1 is a polishing rate of BD, TEOS, Ta and Cu in polishing liquids 1 to 3 and comparative polishing liquids 1 to 3 containing modified silica having different particle diameters in Example 1.
  • Figure 2 shows the polishing rates of BD, TEOS, Ta and Cu in the polishing solution 4 ⁇ 5 and the comparative polishing solution 4 ⁇ 5 in Example 2.
  • Fig. 3 is a polishing rate of BD, TEOS, Ta and Cu in the polishing liquid 6 ⁇ 9 of the modified silica prepared by modifying the silicon dioxide modified by different amounts of silicon germanium modifier in the third embodiment.
  • Fig. 4 is a polishing rate of 10 to 12 pairs of BD, TEOS, Ta and Cu in the polishing liquid containing the modified silica prepared at different temperatures in Example 4.
  • Fig. 5 is a polishing rate of BD, TEOS, Ta and Cu in the polishing liquid 13-15 of the modified silica prepared in Example 5 in the same reaction time.
  • Fig. 6 is a polishing rate of BD, TEOS, Ta and Cu in the polishing liquids 16 to 18 of the modified silica prepared in Example 6 containing the modified silica.
  • Fig. 7 is a polishing rate of BD, TEOS, Ta and Cu for polishing liquids 19 to 23 and comparative polishing liquids 6 to 10 containing modified silica prepared by adding different surfactants in Example 7.
  • Fig. 8 is a polishing rate of BD, TEOS, Ta and Cu in the polishing liquid of 24 to 27 containing the modified silica prepared by using a surfactant in different amounts in Example 8. Summary of the invention
  • Silica sol (30% solids, particle size 50nm) 94.7%, Y-glycidoxypropyltrimethoxysilane (0.2% by weight of silica sol), betaine amphoteric surfactant (dosage It is 0.5% of the total amount of the reactants, and the balance is water.
  • silica sol (30% solids, particle size 100 nm) 94.7%, Y-glycidoxypropyltrimethoxysilane (0.02% silica sol), polyacrylic acid surfactant (amount 1% of the total amount of the reactants, the balance being water.
  • Silica sol (30% solids, particle size 500 nm) 94.7%, Y-glycidoxypropyltrimethoxysilane (0.5% by weight of silica sol), Twisted iodide ammonium bromide surface active
  • A187 is Y-glycidoxypropyltrimethoxysilane
  • CAB-30 is a betaine amphoteric surfactant.
  • polishing conditions polishing pressure 2.0 psi, polishing disk speed 70 rpm, polishing fluid flow rate 100 ml/min, polishing pad Politex, Logitech PM5 Polisher
  • the polishing performance of the comparative polishing liquid 1 to 2 and the polishing liquid 1 to 2 is as shown in Fig. 1.
  • the polishing liquid containing the modified silica particles has a high polishing rate of TEOS and BD. Especially when the silica particles are small (10 nm), the polishing rate of TEOS and BD is remarkably improved after the surface modification treatment. Effect Example 2
  • Polishing conditions polishing pressure 2.0 psi, polishing disk speed 70 rpm, polishing liquid flow rate 100 ml/min, polishing pad Politex, Logitech PM5 Polisher.
  • the polishing performance of the comparative polishing liquid 3, 4 and the polishing liquid 3, 4 is shown in Fig. 2.
  • the polishing liquid containing the silicon silicate modifier A187 modified silica sol has a higher polishing rate of BD and TEOS. Effect Example 3
  • Polishing conditions polishing pressure 2.0 psi, polishing disk speed 70 rpm, polishing fluid flow rate 100 ml/min, polishing pad Politex, Logitech PM5 Polisher.
  • Polishing conditions polishing pressure 2.0 psi, polishing disk speed 70 rpm, polishing fluid flow rate 100 ml/min, polishing pad Politex, Logitech PM5 Polisher.
  • polishing performance of the polishing solution 8 ⁇ 10 is shown in Figure 4. As can be seen from the figure, the polishing solutions containing silica modified at different reaction temperatures have higher TEOS and BD polishing rates. Effect Example 5
  • Polishing conditions polishing pressure 2.0 psi, polishing disk speed 70 rpm, polishing fluid flow rate 100 ml/min, polishing pad Politex, Logitech PM5 Polisher.
  • Polishing conditions polishing pressure 2.0 psi, polishing disk speed 70 rpm, polishing fluid flow rate 100 ml/min, polishing pad Politex, Logitech PM5 Polisher.
  • the polishing performance of the polishing liquid 14 to 16 is shown in Fig. 6. It can be seen from the figure that the modified silica prepared by the modification reaction at different pH values, especially above pH 7, makes the polishing liquid have a higher polishing rate of TEOS and BD. Effect Example 7
  • PEG200 polyethylene glycol
  • PEG200 polyethylene glycol
  • CTAB dodecyl ammonium bromide
  • Polishing conditions polishing pressure 2.0 psi, polishing disk speed 70 rpm, polishing fluid flow rate 100 ml/inin, polishing pad Politex, Logitech PM5 Polisher.
  • the polishing performance of the polishing liquid 17 to 21 and the comparative polishing liquid 6 to 10 is shown in Fig. 7. It can be seen from the figure that different surfactants are used in the modification process, and the modified silica has different polishing performance surfaces. However, the polishing liquid containing the modified silica always exhibits a higher TEOS and BD polishing rate than the unmodified silica. Effect Example 8
  • Polishing conditions polishing pressure 2.0 psi, polishing disk speed 70 rpm, polishing fluid flow rate 100 ml/min, polishing pad Politex, Logitech PM5 Polisher
  • the polishing performance of the polishing solution 22 ⁇ 25 is shown in Fig. 8. It can be seen from the figure that different amounts of strontium are used in the modification process, especially 0.01-0.1% of the surfactant, and the modified silica obtained can make the polishing liquid have higher BD and TEOS polishing rate. .

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention porte sur un sol de dioxyde de silicium modifié, sur son procédé de fabrication et sur son utilisation, ainsi que sur un liquide de polissage le contenant. La surface du dioxyde de silicium du sol de dioxyde de silicium modifié est liée par un agent de couplage de type silane contenant un groupe époxy. La modification est effectuée après mélange du sol de dioxyde de silicium, d'un agent tensio-actif et d'un agent de couplage de type silane contenant un groupe époxy. Parmi le sol de dioxyde de silicium modifié selon l'invention, des surfaces des particules de dioxyde de silicium sont greffées par des groupes époxy, et, d'une part, on peut changer le caractère hydrophile des particules de dioxyde de silicium, et, d'autre part, on peut changer l'interaction entre les particules de dioxyde de silicium et les surfaces de la pastille ou du tampon de polissage. En raison de l'amélioration des deux propriétés, on peut obtenir des taux de polissage supérieurs de TEOS et BD, et on peut apporter moins d'effet sur le polissage de Ta et Cu.
PCT/CN2008/001259 2007-07-06 2008-07-01 Sol de dioxyde de silicium modifié, son procédé de fabrication et son utilisation WO2009006784A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008800233413A CN101754929B (zh) 2007-07-06 2008-07-01 改性二氧化硅溶胶及其制备方法和应用

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA2007100435569A CN101338082A (zh) 2007-07-06 2007-07-06 改性二氧化硅溶胶及其制备方法和应用
CN200710043556.9 2007-07-06

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0371147B1 (fr) * 1988-06-03 1993-05-19 Monsanto Japan Limited Substance abrasive pour tranches de silicium
JPH11343396A (ja) * 1998-04-03 1999-12-14 Kansai Paint Co Ltd エポキシ基含有コロイド粒子有機溶剤液、エポキシ基含有コロイド粒子、このコロイド粒子を含む活性エネルギー線硬化型組成物及びそれを使用した被膜形成方法
US6015843A (en) * 1998-01-14 2000-01-18 Dendreon Corporation Process for making silanized colloidal silica
CN1367809A (zh) * 1999-07-07 2002-09-04 卡伯特微电子公司 含硅烷改性研磨颗粒的化学机械抛光(cmp)组合物
CN1536032A (zh) * 2003-04-07 2004-10-13 章浩龙 一种纳米二氧化硅乳液及其制造方法和用途
CN1692073A (zh) * 2002-10-14 2005-11-02 阿克佐诺贝尔公司 胶态二氧化硅分散体

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0371147B1 (fr) * 1988-06-03 1993-05-19 Monsanto Japan Limited Substance abrasive pour tranches de silicium
US6015843A (en) * 1998-01-14 2000-01-18 Dendreon Corporation Process for making silanized colloidal silica
JPH11343396A (ja) * 1998-04-03 1999-12-14 Kansai Paint Co Ltd エポキシ基含有コロイド粒子有機溶剤液、エポキシ基含有コロイド粒子、このコロイド粒子を含む活性エネルギー線硬化型組成物及びそれを使用した被膜形成方法
CN1367809A (zh) * 1999-07-07 2002-09-04 卡伯特微电子公司 含硅烷改性研磨颗粒的化学机械抛光(cmp)组合物
CN1692073A (zh) * 2002-10-14 2005-11-02 阿克佐诺贝尔公司 胶态二氧化硅分散体
CN1536032A (zh) * 2003-04-07 2004-10-13 章浩龙 一种纳米二氧化硅乳液及其制造方法和用途

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102558916A (zh) * 2011-12-16 2012-07-11 天津大学 一种基于电荷环境调控的纳米二氧化硅粒子表面改性方法及应用
CN102558916B (zh) * 2011-12-16 2013-08-07 天津大学 一种基于电荷环境调控的纳米二氧化硅粒子表面改性方法及应用
CN102585706A (zh) * 2012-01-09 2012-07-18 清华大学 酸性化学机械抛光组合物
CN102585706B (zh) * 2012-01-09 2013-11-20 清华大学 酸性化学机械抛光组合物
CN104194405A (zh) * 2014-08-28 2014-12-10 确成硅化学股份有限公司 一种二氧化硅的改性方法
CN106927465A (zh) * 2015-12-31 2017-07-07 江苏天恒纳米科技股份有限公司 一种改性纳米硅粉的制备方法
CN114195158A (zh) * 2021-12-20 2022-03-18 上海大学 一种高纯单分散纳米球形二氧化硅粉体的制备方法
CN114195158B (zh) * 2021-12-20 2023-11-17 上海大学 一种高纯单分散纳米球形二氧化硅粉体的制备方法
WO2023189400A1 (fr) * 2022-03-28 2023-10-05 Jsr株式会社 Procédé de production de grains abrasifs, composition de polissage mécanochimique, et procédé de polissage

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