[go: up one dir, main page]

WO2008146693A1 - 酸化物透明導電膜、およびそれを用いた光電変換素子、光検出素子 - Google Patents

酸化物透明導電膜、およびそれを用いた光電変換素子、光検出素子 Download PDF

Info

Publication number
WO2008146693A1
WO2008146693A1 PCT/JP2008/059416 JP2008059416W WO2008146693A1 WO 2008146693 A1 WO2008146693 A1 WO 2008146693A1 JP 2008059416 W JP2008059416 W JP 2008059416W WO 2008146693 A1 WO2008146693 A1 WO 2008146693A1
Authority
WO
WIPO (PCT)
Prior art keywords
electroconductive film
oxide
oxide transparent
transparent electroconductive
near infrared
Prior art date
Application number
PCT/JP2008/059416
Other languages
English (en)
French (fr)
Inventor
Takashi Koida
Hiroyuki Fujiwara
Michio Kondo
Original Assignee
National Institute Of Advanced Industrial Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute Of Advanced Industrial Science And Technology filed Critical National Institute Of Advanced Industrial Science And Technology
Priority to JP2009516276A priority Critical patent/JP5229919B2/ja
Publication of WO2008146693A1 publication Critical patent/WO2008146693A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Hybrid Cells (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　可視及び近赤外域での透過性に優れた低抵抗な酸化物透明導電膜を２００°C以下の低温プロセスで提供する。また、本発明の酸化物透明導電膜を光電変換素子の透明電極として用いることにより、従来では不可能であった近赤外域の分光感度の高い高効率太陽電池、あるいは微弱な近赤外線を検出できる高性能光検出素子を実現する。 　酸化物透明導電膜は、水素原子を含有し、水素原子含有量を１％以上１０％以下、ホール効果測定による電子の移動度を４０ｃｍ２／Ｖｓ以上、キャリア濃度を５ｘ１０２０ｃｍ－３以下、比抵抗を１ｘ１０－３Ωｃｍ以下の諸条件を適宜組み合わせて製造した酸化物導電膜から構成する。また、この酸化物導電膜をアニールにより固相成長させる。
PCT/JP2008/059416 2007-05-23 2008-05-22 酸化物透明導電膜、およびそれを用いた光電変換素子、光検出素子 WO2008146693A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009516276A JP5229919B2 (ja) 2007-05-23 2008-05-22 酸化物透明導電膜を用いた光電変換素子及び光検出素子

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007136643 2007-05-23
JP2007-136643 2007-05-23
JP2007299216 2007-11-19
JP2007-299216 2007-11-19

Publications (1)

Publication Number Publication Date
WO2008146693A1 true WO2008146693A1 (ja) 2008-12-04

Family

ID=40074946

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059416 WO2008146693A1 (ja) 2007-05-23 2008-05-22 酸化物透明導電膜、およびそれを用いた光電変換素子、光検出素子

Country Status (2)

Country Link
JP (2) JP5229919B2 (ja)
WO (1) WO2008146693A1 (ja)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009116580A1 (ja) * 2008-03-19 2009-09-24 三洋電機株式会社 太陽電池及びその製造方法
JP2010186822A (ja) * 2009-02-10 2010-08-26 National Institute Of Advanced Industrial Science & Technology 光電変換素子およびその製造方法
WO2011034141A1 (ja) * 2009-09-18 2011-03-24 三洋電機株式会社 太陽電池、太陽電池モジュールおよび太陽電池システム
WO2011034145A1 (ja) * 2009-09-18 2011-03-24 三洋電機株式会社 太陽電池、太陽電池モジュールおよび太陽電池システム
WO2011043235A1 (ja) * 2009-10-06 2011-04-14 Jx日鉱日石金属株式会社 酸化インジウム焼結体、酸化インジウム透明導電膜及び該透明導電膜の製造方法
EP2479763A1 (en) * 2009-09-17 2012-07-25 Sanyo Electric Co., Ltd. Transparent conductive film and device comprising same
JP2014082387A (ja) * 2012-10-17 2014-05-08 Mitsubishi Electric Corp 光起電力素子の製造方法及び光起電力素子
JP2014175441A (ja) * 2013-03-08 2014-09-22 Kaneka Corp 結晶シリコン系太陽電池およびその製造方法
WO2015037577A1 (ja) * 2013-09-13 2015-03-19 独立行政法人産業技術総合研究所 光デバイス
JP2017092033A (ja) * 2015-11-09 2017-05-25 日東電工株式会社 光透過性導電フィルムおよび調光フィルム
TWI617041B (zh) * 2016-12-02 2018-03-01 財團法人金屬工業研究發展中心 矽基異質接面太陽能電池及其製造方法
KR20180095884A (ko) 2016-03-29 2018-08-28 가부시키가이샤 아루박 투명 도전막을 구비한 기판의 제조 방법, 투명 도전막을 구비한 기판의 제조 장치, 투명 도전막을 구비한 기판, 및 태양전지
JP2018139329A (ja) * 2018-06-11 2018-09-06 株式会社カネカ 結晶シリコン系太陽電池の製造方法
JP2018150613A (ja) * 2017-03-13 2018-09-27 東ソー株式会社 複合酸化物透明導電膜及び透明導電膜付基材
JP2019178403A (ja) * 2018-03-30 2019-10-17 東ソー株式会社 複合酸化物透明導電膜、その製造方法及び透明導電膜付基材
CN115413257A (zh) * 2021-03-31 2022-11-29 法国圣戈班玻璃厂 具有近红外检测系统的车辆玻璃窗和相关联的装置
JP7509852B2 (ja) 2022-11-10 2024-07-02 日東電工株式会社 透明導電性フィルム

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5680386B2 (ja) * 2010-11-29 2015-03-04 ジオマテック株式会社 透明導電膜及び透明導電膜付き基板
JP6159490B1 (ja) * 2015-09-30 2017-07-05 積水化学工業株式会社 光透過性導電フィルム、及び、アニール処理された光透過性導電フィルムの製造方法
KR101999894B1 (ko) * 2017-08-03 2019-07-12 주식회사 나노신소재 복합 산화물 소결체 및 스퍼터링 타겟, 산화물 투명도전막의 제조방법
JP2023104168A (ja) 2022-01-17 2023-07-28 国立研究開発法人産業技術総合研究所 導電性部材及び該導電性部材の製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0494174A (ja) * 1990-08-10 1992-03-26 Fuji Electric Co Ltd 化合物薄膜太陽電池およびその製造方法
JPH10226598A (ja) * 1997-02-13 1998-08-25 Sanyo Electric Co Ltd 透明導電性酸化チタン膜及びその製造方法
JPH10294482A (ja) * 1997-04-17 1998-11-04 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置
JP2001047549A (ja) * 1999-08-06 2001-02-20 Mitsui Chemicals Inc 透明導電性フィルム
JP2004014401A (ja) * 2002-06-10 2004-01-15 Konica Minolta Holdings Inc 有機ｅｌ表示装置用透明導電性基材
JP2004095240A (ja) * 2002-08-30 2004-03-25 Mitsui Chemicals Inc 透明電極
JP2004207221A (ja) * 2002-10-04 2004-07-22 Sumitomo Metal Mining Co Ltd 酸化物透明電極膜とその製造方法、透明導電性基材、太陽電池および光検出素子
WO2004105054A1 (ja) * 2003-05-20 2004-12-02 Idemitsu Kosan Co. Ltd. 非晶質透明導電膜、及びその原料スパッタリングターゲット、及び非晶質透明電極基板、及びその製造方法、及び液晶ディスプレイ用カラーフィルタ
JP2005259628A (ja) * 2004-03-15 2005-09-22 Konica Minolta Holdings Inc 透明導電膜形成方法、該方法により形成された透明導電膜および該透明導電膜を有する物品

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004207721A (ja) * 2000-04-19 2004-07-22 Murata Mfg Co Ltd 弾性表面波フィルタ

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0494174A (ja) * 1990-08-10 1992-03-26 Fuji Electric Co Ltd 化合物薄膜太陽電池およびその製造方法
JPH10226598A (ja) * 1997-02-13 1998-08-25 Sanyo Electric Co Ltd 透明導電性酸化チタン膜及びその製造方法
JPH10294482A (ja) * 1997-04-17 1998-11-04 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置
JP2001047549A (ja) * 1999-08-06 2001-02-20 Mitsui Chemicals Inc 透明導電性フィルム
JP2004014401A (ja) * 2002-06-10 2004-01-15 Konica Minolta Holdings Inc 有機ｅｌ表示装置用透明導電性基材
JP2004095240A (ja) * 2002-08-30 2004-03-25 Mitsui Chemicals Inc 透明電極
JP2004207221A (ja) * 2002-10-04 2004-07-22 Sumitomo Metal Mining Co Ltd 酸化物透明電極膜とその製造方法、透明導電性基材、太陽電池および光検出素子
WO2004105054A1 (ja) * 2003-05-20 2004-12-02 Idemitsu Kosan Co. Ltd. 非晶質透明導電膜、及びその原料スパッタリングターゲット、及び非晶質透明電極基板、及びその製造方法、及び液晶ディスプレイ用カラーフィルタ
JP2005259628A (ja) * 2004-03-15 2005-09-22 Konica Minolta Holdings Inc 透明導電膜形成方法、該方法により形成された透明導電膜および該透明導電膜を有する物品

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009116580A1 (ja) * 2008-03-19 2009-09-24 三洋電機株式会社 太陽電池及びその製造方法
JP5279814B2 (ja) * 2008-03-19 2013-09-04 三洋電機株式会社 太陽電池及びその製造方法
JP2010186822A (ja) * 2009-02-10 2010-08-26 National Institute Of Advanced Industrial Science & Technology 光電変換素子およびその製造方法
EP2479763A4 (en) * 2009-09-17 2013-11-13 Sanyo Electric Co TRANSPARENT CONDUCTIVE FILM AND DEVICE THEREFOR
EP2479763A1 (en) * 2009-09-17 2012-07-25 Sanyo Electric Co., Ltd. Transparent conductive film and device comprising same
US20120167982A1 (en) * 2009-09-18 2012-07-05 Sanyo Electric Co., Ltd Solar cell, solar cell module and solar cell system
CN102473761A (zh) * 2009-09-18 2012-05-23 三洋电机株式会社 太阳能电池、太阳能电池模块和太阳能电池系统
CN102473760A (zh) * 2009-09-18 2012-05-23 三洋电机株式会社 太阳能电池模块和太阳能电池系统
JP5533878B2 (ja) * 2009-09-18 2014-06-25 三洋電機株式会社 太陽電池、太陽電池モジュールおよび太陽電池システム
EP2479797A1 (en) * 2009-09-18 2012-07-25 Sanyo Electric Co., Ltd. Solar battery, solar battery module, and solar battery system
EP2479796A1 (en) * 2009-09-18 2012-07-25 Sanyo Electric Co., Ltd. Solar battery, solar battery module, and solar battery system
WO2011034145A1 (ja) * 2009-09-18 2011-03-24 三洋電機株式会社 太陽電池、太陽電池モジュールおよび太陽電池システム
US20120192914A1 (en) * 2009-09-18 2012-08-02 Sanyo Electric Co., Ltd. Solar cell, solar cell module and solar cell system
WO2011034141A1 (ja) * 2009-09-18 2011-03-24 三洋電機株式会社 太陽電池、太陽電池モジュールおよび太陽電池システム
EP2479797A4 (en) * 2009-09-18 2013-08-07 Sanyo Electric Co SOLAR BATTERY, SOLAR BATTERY MODULE AND SOLAR BATTERY SYSTEM
EP2479796A4 (en) * 2009-09-18 2013-08-07 Sanyo Electric Co SOLAR BATTERY, SOLAR BATTERY MODULE AND SOLAR BATTERY SYSTEM
JP5349587B2 (ja) * 2009-10-06 2013-11-20 Ｊｘ日鉱日石金属株式会社 酸化インジウム焼結体、酸化インジウム透明導電膜及び該透明導電膜の製造方法
US10037830B2 (en) 2009-10-06 2018-07-31 Jx Nippon Mining & Metals Corporation Indium oxide transparent conductive film
CN102471160A (zh) * 2009-10-06 2012-05-23 吉坤日矿日石金属株式会社 氧化铟烧结体、氧化铟透明导电膜以及该透明导电膜的制造方法
WO2011043235A1 (ja) * 2009-10-06 2011-04-14 Jx日鉱日石金属株式会社 酸化インジウム焼結体、酸化インジウム透明導電膜及び該透明導電膜の製造方法
US8771557B2 (en) 2009-10-06 2014-07-08 Jx Nippon Mining & Metals Corporation Indium oxide sintered compact, indium oxide transparent conductive film, and manufacturing method of indium oxide transparent conductive film
CN105439541A (zh) * 2009-10-06 2016-03-30 吉坤日矿日石金属株式会社 氧化铟烧结体、氧化铟透明导电膜以及该透明导电膜的制造方法
US9589695B2 (en) 2009-10-06 2017-03-07 Jx Nippon Mining & Metals Corporation Indium oxide transparent conductive film
KR101274279B1 (ko) 2009-10-06 2013-06-13 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 산화인듐 소결체, 산화인듐 투명 도전막 및 그 투명 도전막의 제조 방법
JP2014082387A (ja) * 2012-10-17 2014-05-08 Mitsubishi Electric Corp 光起電力素子の製造方法及び光起電力素子
JP2014175441A (ja) * 2013-03-08 2014-09-22 Kaneka Corp 結晶シリコン系太陽電池およびその製造方法
WO2015037577A1 (ja) * 2013-09-13 2015-03-19 独立行政法人産業技術総合研究所 光デバイス
JPWO2015037577A1 (ja) * 2013-09-13 2017-03-02 国立研究開発法人産業技術総合研究所 光デバイス
JP2017092033A (ja) * 2015-11-09 2017-05-25 日東電工株式会社 光透過性導電フィルムおよび調光フィルム
US10720264B2 (en) 2015-11-09 2020-07-21 Nitto Denko Corporation Light transmitting conductive film and light control film
KR20180095884A (ko) 2016-03-29 2018-08-28 가부시키가이샤 아루박 투명 도전막을 구비한 기판의 제조 방법, 투명 도전막을 구비한 기판의 제조 장치, 투명 도전막을 구비한 기판, 및 태양전지
US11674217B2 (en) 2016-03-29 2023-06-13 Ulvac, Inc. Method of manufacturing substrate with a transparent conductive film, manufacturing apparatus of substrate with transparent conductive film, substrate with transparent conductive film, and solar cell
TWI617041B (zh) * 2016-12-02 2018-03-01 財團法人金屬工業研究發展中心 矽基異質接面太陽能電池及其製造方法
JP2018150613A (ja) * 2017-03-13 2018-09-27 東ソー株式会社 複合酸化物透明導電膜及び透明導電膜付基材
JP2019178403A (ja) * 2018-03-30 2019-10-17 東ソー株式会社 複合酸化物透明導電膜、その製造方法及び透明導電膜付基材
JP7119507B2 (ja) 2018-03-30 2022-08-17 東ソー株式会社 複合酸化物透明導電膜、その製造方法及び透明導電膜付基材
JP2018139329A (ja) * 2018-06-11 2018-09-06 株式会社カネカ 結晶シリコン系太陽電池の製造方法
CN115413257A (zh) * 2021-03-31 2022-11-29 法国圣戈班玻璃厂 具有近红外检测系统的车辆玻璃窗和相关联的装置
JP7509852B2 (ja) 2022-11-10 2024-07-02 日東電工株式会社 透明導電性フィルム

Also Published As

Publication number Publication date
JP5229919B2 (ja) 2013-07-03
JP2013229283A (ja) 2013-11-07
JP5510849B2 (ja) 2014-06-04
JPWO2008146693A1 (ja) 2010-08-19

Similar Documents

Publication Publication Date Title
WO2008146693A1 (ja) 酸化物透明導電膜、およびそれを用いた光電変換素子、光検出素子
Kalra et al. Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector
Tak et al. Wearable gallium oxide solar-blind photodetectors on muscovite mica having ultrahigh photoresponsivity and detectivity with added high-temperature functionalities
Zhang et al. Enhanced photoresponse of ZnO nanorods-based self-powered photodetector by piezotronic interface engineering
Ma et al. High-photoresponsivity self-powered a-, ε-, and β-Ga2O3/p-GaN heterojunction UV photodetectors with an in situ GaON layer by MOCVD
Bi et al. Transparent conductive graphene films synthesized by ambient pressure chemical vapor deposition used as the front electrode of CdTe solar cells
Liu et al. Direct growth of lateral ZnO nanorod UV photodetectors with Schottky contact by a single-step hydrothermal reaction
Al-Hardan et al. Ag/ZnO/p-Si/Ag heterojunction and their optoelectronic characteristics under different UV wavelength illumination
Hu et al. Influence of oxygen pressure on the structural and electrical properties of CuO thin films prepared by pulsed laser deposition
Luo et al. Magnetron-sputtered SnO thin films for p-type and ambipolar TFT applications
WO2009037121A8 (de) Organischer photodetektor zur detektion infraroter strahlung, verfahren zur herstellung dazu und verwendung
Mamat et al. Fabrication of thin, dense and small-diameter zinc oxide nanorod array-based ultraviolet photoconductive sensors with high sensitivity by catalyst-free radio frequency magnetron sputtering
Zhi et al. Self-powered β-Ga2O3 solar-blind photodetector based on the planar Au/Ga2O3 Schottky junction
Sivalingam et al. Nanostructured mixed ZnO and CdO thin film for selective ethanol sensing
Chen et al. Polycrystalline Ga2O3 nanostructure-based thin films for fast-response solar-blind photodetectors
Yan et al. Investigating the single crystal OFET and photo-responsive characteristics based on an anthracene linked benzo [b] benzo [4, 5] thieno [2, 3-d] thiophene semiconductor
Selman et al. Fabrication of Cu2O nanocrystalline thin films photosensor prepared by RF sputtering technique
Kim et al. Fully transparent InZnSnO/β-Ga2O3/InSnO solar-blind photodetectors with high schottky barrier height and low-defect interfaces
Wang et al. Recent progress in solar-blind photodetectors based on ultrawide bandgap semiconductors
Lin et al. The preparation and high photon-sensing properties of fluorinated tin dioxide nanowires
Chen et al. High stability flexible deep-UV detector based on all-oxide heteroepitaxial junction
Kou et al. Catalyst-free growth of dense γ-In2Se3 nanosheet arrays and their application in photoelectric detectors
Pan et al. A ZnO-based programmable UV detection integrated circuit unit
Li et al. Self-powered diamond ultraviolet photodetector with a transparent Ag nanowire electrode
Huang et al. The fabrication and photoresponse of ZnO/diamond film heterojunction diode

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08764489

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009516276

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08764489

Country of ref document: EP

Kind code of ref document: A1