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WO2008099524A1 - 光電変換装置及びその製造方法 - Google Patents

光電変換装置及びその製造方法 Download PDF

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Publication number
WO2008099524A1
WO2008099524A1 PCT/JP2007/065386 JP2007065386W WO2008099524A1 WO 2008099524 A1 WO2008099524 A1 WO 2008099524A1 JP 2007065386 W JP2007065386 W JP 2007065386W WO 2008099524 A1 WO2008099524 A1 WO 2008099524A1
Authority
WO
WIPO (PCT)
Prior art keywords
transparent electrode
substrate
electrode layer
photoelectric converter
photoelectric conversion
Prior art date
Application number
PCT/JP2007/065386
Other languages
English (en)
French (fr)
Inventor
Youji Nakano
Yoshiaki Takeuchi
Kengo Yamaguchi
Yasuhiro Yamauchi
Original Assignee
Mitsubishi Heavy Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries, Ltd. filed Critical Mitsubishi Heavy Industries, Ltd.
Priority to CN2007800323769A priority Critical patent/CN101627478B/zh
Priority to AU2007346981A priority patent/AU2007346981B2/en
Priority to CA002661217A priority patent/CA2661217A1/en
Priority to JP2008557975A priority patent/JPWO2008099524A1/ja
Priority to EP07792055A priority patent/EP2133924A4/en
Priority to US12/003,261 priority patent/US20080196761A1/en
Publication of WO2008099524A1 publication Critical patent/WO2008099524A1/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/174—Photovoltaic cells having only PIN junction potential barriers comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)

Abstract

　高い光電変換効率と高い生産性を両立した光電変換装置及びその製造方法を提供することを目的とする。透明絶縁性の基板１上に透明電極層２を設けてなる透明電極付き基板と、該透明電極付き基板の透明電極層２側に順次形成された、結晶質シリコン系半導体を主として有する光電変換層９２ならびに裏面電極層４とを少なくとも有してなる光電変換装置であって、前記透明電極付き基板の透明電極層２表面が、大小の凹凸が混在した形状であり、かつ分光ヘイズ率が５５０ｎｍ以上８００ｎｍ以下の波長で２０％以上であり、前記結晶質シリコン系半導体を主として有する光電変換層の膜厚が１.２μｍ以上２μｍ以下、かつラマン比が３．０以上８．０以下である光電変換装置９０を提供する。
PCT/JP2007/065386 2007-02-16 2007-08-06 光電変換装置及びその製造方法 WO2008099524A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN2007800323769A CN101627478B (zh) 2007-02-16 2007-08-06 光电转换装置及其制造方法
AU2007346981A AU2007346981B2 (en) 2007-02-16 2007-08-06 Photovoltaic device and process for producing same
CA002661217A CA2661217A1 (en) 2007-02-16 2007-08-06 Photovoltaic device and process for producing same
JP2008557975A JPWO2008099524A1 (ja) 2007-02-16 2007-08-06 光電変換装置及びその製造方法
EP07792055A EP2133924A4 (en) 2007-02-16 2007-08-06 PHOTOELECTRIC CONVERTER AND MANUFACTURING METHOD THEREFOR
US12/003,261 US20080196761A1 (en) 2007-02-16 2007-12-21 Photovoltaic device and process for producing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007036432 2007-02-16
JP2007-036432 2007-02-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/003,261 Continuation US20080196761A1 (en) 2007-02-16 2007-12-21 Photovoltaic device and process for producing same

Publications (1)

Publication Number Publication Date
WO2008099524A1 true WO2008099524A1 (ja) 2008-08-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/065386 WO2008099524A1 (ja) 2007-02-16 2007-08-06 光電変換装置及びその製造方法

Country Status (8)

Country Link
US (1) US20080196761A1 (ja)
EP (1) EP2133924A4 (ja)
JP (2) JPWO2008099524A1 (ja)
KR (1) KR20090042943A (ja)
CN (1) CN101627478B (ja)
AU (1) AU2007346981B2 (ja)
CA (1) CA2661217A1 (ja)
WO (1) WO2008099524A1 (ja)

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KR20090042943A (ko) 2009-05-04
AU2007346981A1 (en) 2008-08-21
CN101627478B (zh) 2011-06-01
JPWO2008099524A1 (ja) 2010-05-27
US20080196761A1 (en) 2008-08-21
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AU2007346981B2 (en) 2013-08-22
CA2661217A1 (en) 2008-08-21

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