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WO2008087868A1 - 発光ダイオードパッケージ及び発光ダイオードパッケージ用のリード群構造 - Google Patents

発光ダイオードパッケージ及び発光ダイオードパッケージ用のリード群構造 Download PDF

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Publication number
WO2008087868A1
WO2008087868A1 PCT/JP2008/050031 JP2008050031W WO2008087868A1 WO 2008087868 A1 WO2008087868 A1 WO 2008087868A1 JP 2008050031 W JP2008050031 W JP 2008050031W WO 2008087868 A1 WO2008087868 A1 WO 2008087868A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting diode
diode package
lead group
group structure
Prior art date
Application number
PCT/JP2008/050031
Other languages
English (en)
French (fr)
Inventor
Takaki Yasuda
Original Assignee
Showa Denko K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko K.K. filed Critical Showa Denko K.K.
Priority to US12/302,669 priority Critical patent/US7875899B2/en
Publication of WO2008087868A1 publication Critical patent/WO2008087868A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

　本発明の発光ダイオードパッケージ１は、複数の発光ダイオードチップ２が直列接続されてなるダイオード群２Ｄと、ダイオード群２Ｄに接続されるリード群３とを具備してなり、リード群３には、ダイオード群２Ｄの端子となる一対の外部リード３１、３２と、発光ダイオードチップ２の数よりも１つ少ない数の補助リード３３とが備えられ、一対の外部リード３１、３２のうち一方の外部リード３１上に、複数の発光ダイオードチップ２が一列に配置され、複数の発光ダイオードチップ２からなる列の片側または両側に、補助リード３３が配置され、複数の発光ダイオードチップ２の内、相互に隣接する発光ダイオードチップ２同士が、補助リード３３を介して直列に接続されることを特徴とする発光ダイオードパッケージである。
PCT/JP2008/050031 2007-01-15 2008-01-07 発光ダイオードパッケージ及び発光ダイオードパッケージ用のリード群構造 WO2008087868A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/302,669 US7875899B2 (en) 2007-01-15 2008-01-07 Light-emitting diode package and lead group structure for light-emitting diode package

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-006003 2007-01-15
JP2007006003A JP5106862B2 (ja) 2007-01-15 2007-01-15 発光ダイオードパッケージ

Publications (1)

Publication Number Publication Date
WO2008087868A1 true WO2008087868A1 (ja) 2008-07-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050031 WO2008087868A1 (ja) 2007-01-15 2008-01-07 発光ダイオードパッケージ及び発光ダイオードパッケージ用のリード群構造

Country Status (4)

Country Link
US (1) US7875899B2 (ja)
JP (1) JP5106862B2 (ja)
TW (1) TW200847485A (ja)
WO (1) WO2008087868A1 (ja)

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JP2013008979A (ja) * 2012-08-02 2013-01-10 Toshiba Corp 半導体パッケージ
JP2014064006A (ja) * 2012-09-21 2014-04-10 Advanced Optoelectronic Technology Inc 発光ダイオードパッケージ及びその製造方法
CN110071207A (zh) * 2019-04-01 2019-07-30 深圳市瑞丰光电子股份有限公司 Led封装方法及led
JP2020095939A (ja) * 2018-12-12 2020-06-18 日亜化学工業株式会社 発光モジュールの製造方法、発光モジュール及びプロジェクタ
JP2022176210A (ja) * 2018-12-12 2022-11-25 日亜化学工業株式会社 発光モジュールの製造方法、発光モジュール及びプロジェクタ
US11949209B2 (en) 2018-06-14 2024-04-02 Nichia Corporation Semiconductor device and method of manufacturing the semiconductor device

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US7675145B2 (en) * 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
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US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US8367945B2 (en) 2006-08-16 2013-02-05 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US9711703B2 (en) * 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
CN101388161A (zh) * 2007-09-14 2009-03-18 科锐香港有限公司 Led表面安装装置和并入有此装置的led显示器
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
JP5416975B2 (ja) 2008-03-11 2014-02-12 ローム株式会社 半導体発光装置
KR101448153B1 (ko) * 2008-06-25 2014-10-08 삼성전자주식회사 발광 다이오드용 멀티칩 패키지 및 멀티칩 패키지 방식의발광 다이오드 소자
JP5464825B2 (ja) * 2008-07-23 2014-04-09 ローム株式会社 Ｌｅｄモジュール
JP5227693B2 (ja) * 2008-08-11 2013-07-03 スタンレー電気株式会社 半導体発光装置
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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008979A (ja) * 2012-08-02 2013-01-10 Toshiba Corp 半導体パッケージ
JP2014064006A (ja) * 2012-09-21 2014-04-10 Advanced Optoelectronic Technology Inc 発光ダイオードパッケージ及びその製造方法
US11949209B2 (en) 2018-06-14 2024-04-02 Nichia Corporation Semiconductor device and method of manufacturing the semiconductor device
JP2022176210A (ja) * 2018-12-12 2022-11-25 日亜化学工業株式会社 発光モジュールの製造方法、発光モジュール及びプロジェクタ
JP2020095939A (ja) * 2018-12-12 2020-06-18 日亜化学工業株式会社 発光モジュールの製造方法、発光モジュール及びプロジェクタ
JP2022184893A (ja) * 2018-12-12 2022-12-13 日亜化学工業株式会社 発光モジュールの製造方法、発光モジュール及びプロジェクタ
JP7280542B2 (ja) 2018-12-12 2023-05-24 日亜化学工業株式会社 発光モジュールの製造方法、発光モジュール及びプロジェクタ
JP7284440B2 (ja) 2018-12-12 2023-05-31 日亜化学工業株式会社 発光モジュールの製造方法、発光モジュール及びプロジェクタ
JP7311770B2 (ja) 2018-12-12 2023-07-20 日亜化学工業株式会社 発光モジュールの製造方法、発光モジュール及びプロジェクタ
JP2023143976A (ja) * 2018-12-12 2023-10-06 日亜化学工業株式会社 発光モジュールの製造方法、発光モジュール及びプロジェクタ
JP2023162205A (ja) * 2018-12-12 2023-11-08 日亜化学工業株式会社 発光モジュールの製造方法、発光モジュール及びプロジェクタ
JP7406175B2 (ja) 2018-12-12 2023-12-27 日亜化学工業株式会社 発光モジュールの製造方法、発光モジュール及びプロジェクタ
US11967803B2 (en) 2018-12-12 2024-04-23 Nichia Corporation Method of manufacturing light emitting module, light emitting module, and projector
JP7534687B2 (ja) 2018-12-12 2024-08-15 日亜化学工業株式会社 発光モジュールの製造方法、発光モジュール及びプロジェクタ
CN110071207A (zh) * 2019-04-01 2019-07-30 深圳市瑞丰光电子股份有限公司 Led封装方法及led
CN110071207B (zh) * 2019-04-01 2024-05-14 深圳市瑞丰光电子股份有限公司 Led封装方法及led

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