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WO2002010486A1 - Method for detecting completion of melting of polycrystalline silicone, method for setting temperature for contacting seed crystal with melt, and apparatus for producing silicon single crystal - Google Patents

Method for detecting completion of melting of polycrystalline silicone, method for setting temperature for contacting seed crystal with melt, and apparatus for producing silicon single crystal Download PDF

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Publication number
WO2002010486A1
WO2002010486A1 PCT/JP2001/006528 JP0106528W WO0210486A1 WO 2002010486 A1 WO2002010486 A1 WO 2002010486A1 JP 0106528 W JP0106528 W JP 0106528W WO 0210486 A1 WO0210486 A1 WO 0210486A1
Authority
WO
WIPO (PCT)
Prior art keywords
melting
completion
single crystal
melt
raw material
Prior art date
Application number
PCT/JP2001/006528
Other languages
French (fr)
Japanese (ja)
Inventor
Masahiko Urano
Hideki Shigeno
Original Assignee
Shin-Etsu Handotai Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co., Ltd. filed Critical Shin-Etsu Handotai Co., Ltd.
Priority to JP2002516396A priority Critical patent/JP3704710B2/en
Publication of WO2002010486A1 publication Critical patent/WO2002010486A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A method for determining a state of melting of a raw material polycrystalline silicon which allows detecting completion of the melting, determining efficiently the temperature which is suitable for growing a single crystal and to which the silicon melt is to be cooled after completion of the melting, reducing process loss, and thus saving labor and cost; and an apparatus for producing a silicon single crystal for practicing the method are provided. Of the above, a method for detecting completion of the melting of a raw material polycrystalline silicon is characterized in that the surface temperature of a silicon melt during melting of the raw material polycrystalline silicon is measured by an optical means, the fluctuation width of the temperature is compared with the predetermined value, the time when the fluctuation width of the surface temperature is for the first time the same as or less than the predetermined value is taken as the first point of completion of the melting, and the melting of a raw material polycrystalline silicon is determined to be completed at the first point of completion of the melting.
PCT/JP2001/006528 2000-07-28 2001-07-30 Method for detecting completion of melting of polycrystalline silicone, method for setting temperature for contacting seed crystal with melt, and apparatus for producing silicon single crystal WO2002010486A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002516396A JP3704710B2 (en) 2000-07-28 2001-07-30 Method of setting seed crystal deposition temperature and silicon single crystal manufacturing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000228273 2000-07-28
JP2000-228273 2000-07-28

Publications (1)

Publication Number Publication Date
WO2002010486A1 true WO2002010486A1 (en) 2002-02-07

Family

ID=18721593

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/006528 WO2002010486A1 (en) 2000-07-28 2001-07-30 Method for detecting completion of melting of polycrystalline silicone, method for setting temperature for contacting seed crystal with melt, and apparatus for producing silicon single crystal

Country Status (2)

Country Link
JP (1) JP3704710B2 (en)
WO (1) WO2002010486A1 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1498514A1 (en) 2003-07-14 2005-01-19 Toyo Tanso Co., Ltd. Apparatus and method for molten salt electrolytic bath control
JP2009155162A (en) * 2007-12-26 2009-07-16 Sharp Corp Fusing device
JP2009161400A (en) * 2008-01-08 2009-07-23 Shin Etsu Handotai Co Ltd Method and apparatus for producing silicon single crystal
JP2009196830A (en) * 2008-02-19 2009-09-03 Sharp Corp Apparatus for manufacturing deposited plate and method for manufacturing deposited plate
US7635798B2 (en) 2001-08-31 2009-12-22 Dow Agrosciences, Llc Nucleic acid compositions conferring altered metabolic characteristics
JP2012500775A (en) * 2008-08-25 2012-01-12 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Method and apparatus for continuously measuring the height of silicon islands
CN105603512A (en) * 2016-01-26 2016-05-25 中山大学 Seeding temperature capturing method for crystal growth adopting czochralski method and automatic capturing equipment
JP2017114709A (en) * 2015-12-22 2017-06-29 信越半導体株式会社 Single crystal manufacturing apparatus and manufacturing method for single crystal
JP2017193461A (en) * 2016-04-20 2017-10-26 株式会社Sumco Production method and device of single crystal
WO2022185789A1 (en) * 2021-03-01 2022-09-09 信越半導体株式会社 Method for detecting state of surface of raw material melt, method for producing monocrystal, and cz monocrystal production device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101317198B1 (en) * 2011-10-24 2013-10-15 한국생산기술연구원 Monitoring apparatus for sapphire growth furnace
TWI766600B (en) * 2021-03-02 2022-06-01 環球晶圓股份有限公司 Method for detecting melt

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08259381A (en) * 1995-03-27 1996-10-08 Nippon Steel Corp Single crystal pulling control method
JPH09175890A (en) * 1995-12-25 1997-07-08 Sumitomo Sitix Corp Liquid temperature control method for single crystal pulling furnace
US5846318A (en) * 1997-07-17 1998-12-08 Memc Electric Materials, Inc. Method and system for controlling growth of a silicon crystal
JP2000264780A (en) * 1999-03-19 2000-09-26 Toshiba Ceramics Co Ltd Method and apparatus for detecting melting in semiconductor single crystal pulling apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08259381A (en) * 1995-03-27 1996-10-08 Nippon Steel Corp Single crystal pulling control method
JPH09175890A (en) * 1995-12-25 1997-07-08 Sumitomo Sitix Corp Liquid temperature control method for single crystal pulling furnace
US5846318A (en) * 1997-07-17 1998-12-08 Memc Electric Materials, Inc. Method and system for controlling growth of a silicon crystal
JP2000264780A (en) * 1999-03-19 2000-09-26 Toshiba Ceramics Co Ltd Method and apparatus for detecting melting in semiconductor single crystal pulling apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
M.J. WARGO ET AL.: "Real time thermal imaging for analysis and control of crystal growth by the Czochralski technique", JOURNAL OF CRYSTAL GROWTH, vol. 116, no. 1-2, January 1992 (1992-01-01), pages 213 - 224, XP002945487 *

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7635798B2 (en) 2001-08-31 2009-12-22 Dow Agrosciences, Llc Nucleic acid compositions conferring altered metabolic characteristics
EP1498514A1 (en) 2003-07-14 2005-01-19 Toyo Tanso Co., Ltd. Apparatus and method for molten salt electrolytic bath control
KR100579385B1 (en) 2003-07-14 2006-05-12 도요탄소 가부시키가이샤 Apparatus and method for molten salt electrolytic bath control
CN1303258C (en) * 2003-07-14 2007-03-07 东洋炭素株式会社 Apparatus and method for molten salt electrolytic bath control
US7316765B2 (en) 2003-07-14 2008-01-08 Toyo Tanso Co., Ltd. Apparatus and method for molten salt electrolytic bath control
JP2009155162A (en) * 2007-12-26 2009-07-16 Sharp Corp Fusing device
JP2009161400A (en) * 2008-01-08 2009-07-23 Shin Etsu Handotai Co Ltd Method and apparatus for producing silicon single crystal
JP2009196830A (en) * 2008-02-19 2009-09-03 Sharp Corp Apparatus for manufacturing deposited plate and method for manufacturing deposited plate
JP2012500775A (en) * 2008-08-25 2012-01-12 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Method and apparatus for continuously measuring the height of silicon islands
JP2017114709A (en) * 2015-12-22 2017-06-29 信越半導体株式会社 Single crystal manufacturing apparatus and manufacturing method for single crystal
CN105603512A (en) * 2016-01-26 2016-05-25 中山大学 Seeding temperature capturing method for crystal growth adopting czochralski method and automatic capturing equipment
CN105603512B (en) * 2016-01-26 2018-10-16 中山大学 A kind of lower brilliant temperature catching method and automatic capture equipment of method of crystal growth by crystal pulling
JP2017193461A (en) * 2016-04-20 2017-10-26 株式会社Sumco Production method and device of single crystal
WO2022185789A1 (en) * 2021-03-01 2022-09-09 信越半導体株式会社 Method for detecting state of surface of raw material melt, method for producing monocrystal, and cz monocrystal production device
JP2022132995A (en) * 2021-03-01 2022-09-13 信越半導体株式会社 Method for detecting surface state of raw material melt, method for producing single crystal, and CZ single crystal production apparatus
JP7571618B2 (en) 2021-03-01 2024-10-23 信越半導体株式会社 Method for detecting surface condition of raw material melt, method for producing single crystal, and CZ single crystal production apparatus

Also Published As

Publication number Publication date
JP3704710B2 (en) 2005-10-12

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