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WO2002044446A3 - Process for controlling thermal history of vacancy-dominated, single crystal silicon - Google Patents

Process for controlling thermal history of vacancy-dominated, single crystal silicon Download PDF

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Publication number
WO2002044446A3
WO2002044446A3 PCT/US2001/044180 US0144180W WO0244446A3 WO 2002044446 A3 WO2002044446 A3 WO 2002044446A3 US 0144180 W US0144180 W US 0144180W WO 0244446 A3 WO0244446 A3 WO 0244446A3
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
crystal silicon
thermal history
ingot
vacancy
Prior art date
Application number
PCT/US2001/044180
Other languages
French (fr)
Other versions
WO2002044446A2 (en
Inventor
Makoto Kojima
Yasuhiro Ishii
Original Assignee
Memc Electronic Materials
Makoto Kojima
Yasuhiro Ishii
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000374147A external-priority patent/JP2002226293A/en
Application filed by Memc Electronic Materials, Makoto Kojima, Yasuhiro Ishii filed Critical Memc Electronic Materials
Priority to EP01989767A priority Critical patent/EP1346086A2/en
Priority to KR10-2003-7007250A priority patent/KR20030059293A/en
Priority to US10/433,144 priority patent/US20040055527A1/en
Publication of WO2002044446A2 publication Critical patent/WO2002044446A2/en
Publication of WO2002044446A3 publication Critical patent/WO2002044446A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A Czochralski method of producing a single crystal silicon ingot having a uniform thermal history. In the process, the power supplied to the side heater is decreased during the growth of a latter portion of main body, and optionally the end-cone, of the ingot, while power supplied to a bottom heater is gradually increased during growth the same portion. The present process enables a substantial portion of an ingot to be obtained yielding wafers having fewer light point defects in excess of about 0.2 microns and improved gate oxide integrity.
PCT/US2001/044180 2000-11-30 2001-11-26 Process for controlling thermal history of vacancy-dominated, single crystal silicon WO2002044446A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP01989767A EP1346086A2 (en) 2000-11-30 2001-11-26 Process for controlling thermal history of vacancy-dominated, single crystal silicon
KR10-2003-7007250A KR20030059293A (en) 2000-11-30 2001-11-26 Process for controlling thermal history of vacancy-dominated, single crystal silicon
US10/433,144 US20040055527A1 (en) 2000-11-30 2001-11-26 Process for controlling thermal history of vacancy-dominated, single crystal silicon

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2000364601 2000-11-30
JP2000-364601 2000-11-30
JP2000374147A JP2002226293A (en) 2000-11-30 2000-12-08 Method for growing silicon single crystal
JP2000-374147 2000-12-08
US27398001P 2001-03-07 2001-03-07
US60/273,980 2001-03-07

Publications (2)

Publication Number Publication Date
WO2002044446A2 WO2002044446A2 (en) 2002-06-06
WO2002044446A3 true WO2002044446A3 (en) 2003-01-16

Family

ID=27345313

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/044180 WO2002044446A2 (en) 2000-11-30 2001-11-26 Process for controlling thermal history of vacancy-dominated, single crystal silicon

Country Status (5)

Country Link
EP (1) EP1346086A2 (en)
KR (1) KR20030059293A (en)
CN (1) CN1478156A (en)
TW (1) TW583353B (en)
WO (1) WO2002044446A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100588425B1 (en) * 2003-03-27 2006-06-12 실트로닉 아게 Method for the Production of a Silicon Single Crystal, Silicon Single Crystal and Silicon Semiconductor Wafers with determined Defect Distributions
JP2005162599A (en) 2003-12-03 2005-06-23 Siltron Inc Single crystal silicon ingot and wafer having homogeneous vacancy defect, and method and apparatus for making same
JP4753308B2 (en) 2006-07-13 2011-08-24 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Method for melting semiconductor wafer material and method for crystal growth of semiconductor wafer
KR101032156B1 (en) * 2009-05-14 2011-05-02 (주)혜성나노텍 Prefabricated rotating shaft roller for vinyl house
CN109750350A (en) * 2019-03-20 2019-05-14 丽江隆基硅材料有限公司 A kind of method and single crystal growing furnace adjusting single crystal furnace heater power
WO2020214531A1 (en) * 2019-04-18 2020-10-22 Globalwafers Co., Ltd. Methods for growing a single crystal silicon ingot using continuous czochralski method
CN114351243B (en) * 2021-12-07 2023-11-07 山东有研半导体材料有限公司 Preparation method of N-type doped silicon single crystal and prepared doped silicon single crystal

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5152867A (en) * 1990-03-12 1992-10-06 Osaka Titanium Co., Ltd. Apparatus and method for producing silicon single crystal
US5779791A (en) * 1996-08-08 1998-07-14 Memc Electronic Materials, Inc. Process for controlling thermal history of Czochralski-grown silicon
WO1998038675A1 (en) * 1997-02-26 1998-09-03 Memc Electronic Materials, Inc. Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
WO1998045508A1 (en) * 1997-04-09 1998-10-15 Memc Electronic Materials, Inc. Low defect density, vacancy dominated silicon
US6113688A (en) * 1997-03-27 2000-09-05 Sumitomo Metal Industries, Ltd. Process for producing single crystals
US6132507A (en) * 1997-12-01 2000-10-17 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Process and device for the production of a single crystal

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5152867A (en) * 1990-03-12 1992-10-06 Osaka Titanium Co., Ltd. Apparatus and method for producing silicon single crystal
US5779791A (en) * 1996-08-08 1998-07-14 Memc Electronic Materials, Inc. Process for controlling thermal history of Czochralski-grown silicon
WO1998038675A1 (en) * 1997-02-26 1998-09-03 Memc Electronic Materials, Inc. Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
US6113688A (en) * 1997-03-27 2000-09-05 Sumitomo Metal Industries, Ltd. Process for producing single crystals
WO1998045508A1 (en) * 1997-04-09 1998-10-15 Memc Electronic Materials, Inc. Low defect density, vacancy dominated silicon
US6132507A (en) * 1997-12-01 2000-10-17 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Process and device for the production of a single crystal

Also Published As

Publication number Publication date
WO2002044446A2 (en) 2002-06-06
TW583353B (en) 2004-04-11
CN1478156A (en) 2004-02-25
KR20030059293A (en) 2003-07-07
EP1346086A2 (en) 2003-09-24

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