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UST979006I4 - Trapezoidal gate FET device - Google Patents

Trapezoidal gate FET device Download PDF

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Publication number
UST979006I4
UST979006I4 US05/920,026 US92002678A UST979006I4 US T979006 I4 UST979006 I4 US T979006I4 US 92002678 A US92002678 A US 92002678A US T979006 I4 UST979006 I4 US T979006I4
Authority
US
United States
Prior art keywords
fet device
gate fet
trapezoidal gate
reduce
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US05/920,026
Other languages
English (en)
Inventor
Gilbert Hadamard, deceased
administratrix by Denise L. Hadamard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of UST979006I4 publication Critical patent/UST979006I4/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Logic Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
US05/920,026 1977-01-19 1978-06-28 Trapezoidal gate FET device Pending UST979006I4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76080677A 1977-01-19 1977-01-19

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US76080677A Continuation 1977-01-19 1977-01-19

Publications (1)

Publication Number Publication Date
UST979006I4 true UST979006I4 (en) 1979-02-06

Family

ID=25060249

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/920,026 Pending UST979006I4 (en) 1977-01-19 1978-06-28 Trapezoidal gate FET device

Country Status (5)

Country Link
US (1) UST979006I4 (es)
JP (1) JPS5390880A (es)
DE (1) DE2801293A1 (es)
FR (1) FR2378356A1 (es)
IT (1) IT1114163B (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984000244A1 (en) * 1982-06-22 1984-01-19 Motorola Inc Four-state rom cell with increased gain differential between states

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984000244A1 (en) * 1982-06-22 1984-01-19 Motorola Inc Four-state rom cell with increased gain differential between states

Also Published As

Publication number Publication date
FR2378356A1 (fr) 1978-08-18
JPS5390880A (en) 1978-08-10
DE2801293A1 (de) 1978-07-20
IT1114163B (it) 1986-01-27
FR2378356B1 (es) 1980-12-19

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