FR2378356B1 - - Google Patents
Info
- Publication number
- FR2378356B1 FR2378356B1 FR7737953A FR7737953A FR2378356B1 FR 2378356 B1 FR2378356 B1 FR 2378356B1 FR 7737953 A FR7737953 A FR 7737953A FR 7737953 A FR7737953 A FR 7737953A FR 2378356 B1 FR2378356 B1 FR 2378356B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76080677A | 1977-01-19 | 1977-01-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2378356A1 FR2378356A1 (fr) | 1978-08-18 |
| FR2378356B1 true FR2378356B1 (es) | 1980-12-19 |
Family
ID=25060249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7737953A Granted FR2378356A1 (fr) | 1977-01-19 | 1977-12-09 | Dispositif a transistors a effet de champ a porte trapezoidale |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | UST979006I4 (es) |
| JP (1) | JPS5390880A (es) |
| DE (1) | DE2801293A1 (es) |
| FR (1) | FR2378356A1 (es) |
| IT (1) | IT1114163B (es) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4546453A (en) * | 1982-06-22 | 1985-10-08 | Motorola, Inc. | Four-state ROM cell with increased differential between states |
-
1977
- 1977-08-31 JP JP10373477A patent/JPS5390880A/ja active Pending
- 1977-09-20 IT IT27707/77A patent/IT1114163B/it active
- 1977-12-09 FR FR7737953A patent/FR2378356A1/fr active Granted
-
1978
- 1978-01-13 DE DE19782801293 patent/DE2801293A1/de not_active Withdrawn
- 1978-06-28 US US05/920,026 patent/UST979006I4/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| UST979006I4 (en) | 1979-02-06 |
| FR2378356A1 (fr) | 1978-08-18 |
| JPS5390880A (en) | 1978-08-10 |
| IT1114163B (it) | 1986-01-27 |
| DE2801293A1 (de) | 1978-07-20 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |