TWM535870U - Substrate having film type pattern - Google Patents

Abstract

A substrate having film type pattern, the substrate having film type pattern includes: a substrate; at least film type pattern layer which is allocated on the substrate; and a peripheral pattern layer which is allocated around the film type pattern layer.

Description

Thin film patterned substrate

The present invention relates to a substrate, and more particularly to a substrate having a thin film pattern.

At present, smart devices such as smart phones, smart watches, smart medical devices, etc., are equipped with large screens for users to watch the information on the screen. In addition to their powerful functions, these devices with large screens are gradually becoming personalized and beautiful, including appearance, shape and color. These must be achieved through an impressive shell design and manufacturing. At present, the curved shell shape is particularly attractive, and it has gradually become the future trend of smart devices.

Patterns, lines, protective films, etc. can be made on the three-dimensional casing. The technology for directly making patterns, lines, protective films, etc. on a three-dimensional outer casing has the following methods: the first method: transfer technology. Through the pre-made plan, it is transferred to the target's three-dimensional. The processing cost of such a method is low, but the processing speed is slow, the material cost is high, and the line resolution is poor. The second method: inkjet + laser engraving. The pigment is sprayed onto the target's three-dimensional shape by an inkjet method, and the pattern is engraved by laser engraving. This method has high processing cost and slow processing speed, high equipment cost and high material cost. The advantage is that the line resolution is high, up to 20um (micron).

However, if a metal pattern is to be formed on a flat or a three-dimensional substrate, it is necessary to pass through multiple masks, development, etching, etc., which is not only technically cumbersome, but also has multiple masks used multiple times, and must be accurately positioned. The problem. This also leads to low yield results.

Therefore, how to develop a film pattern processing method which has low processing cost, high processing speed, low material cost, high line resolution, and high process yield, and can be patterned or protected on a planar substrate or a three-dimensional substrate. Thin films, etc., have become the development direction that smart device manufacturers are hoping for.

In order to achieve the above object, the present invention provides a substrate with a thin film pattern and a method for forming a thin film pattern on the substrate, and uses the technical means of photoresist removal process to realize the technical effect of one mask, no etching or one etching, and achieves The special technical effect of seamless film pattern making.

The invention provides a method for forming a thin film pattern on a substrate, comprising: forming a base color layer on a substrate; forming a detachment photoresist layer on the substrate having the base color layer; On the substrate; exposing; removing the exposed photoresist layer and forming a pattern space; removing the underlying color layer under the pattern space formed by the photoresist layer; forming at least one film Laminating on the substrate having the pattern space; and removing the germanium photoresist layer to form a thin film pattern structure.

The present invention further provides a substrate having a thin film pattern structure, comprising: a substrate; at least one thin film pattern layer disposed on the substrate; and a peripheral pattern layer disposed on the substrate to seamlessly surround the thin film pattern layer .

The above and other objects, features, and advantages of the present invention will become more apparent and understood.

1, 4‧‧‧film substrate with film pattern

2. Section 3.‧‧

10‧‧‧Three-dimensional substrate

20, 21‧‧‧ base photoresist layer

30, 31‧‧ ‧ away from the photoresist layer

40‧‧‧Three-dimensional mask

41‧‧‧pattern structure

50‧‧‧ ultraviolet light

60‧‧‧film layer

61‧‧‧film pattern layer

62, 63, 64, 66‧‧‧ film patterns

70, 71‧‧‧ base color layer

80‧‧‧pattern space

Step 101‧‧‧ forming a base color layer on a substrate

Step 102‧‧‧ forming a detachment photoresist layer on the substrate having the basal color layer

Step 103‧‧‧ attaching to the substrate with a mask

Step 104‧‧‧ Exposure

Step 105‧‧‧Remove the exposed photoresist layer that is not exposed and form a pattern space

Step 106‧‧‧Removing the base color layer below the pattern space formed by the photoresist layer

Step 107‧‧‧ forming at least one film layer on the substrate having the pattern space

Step 108‧‧‧ remove the detachment from the photoresist layer to form a thin film pattern structure

Step 111‧‧‧ Forming a base color layer on a three-dimensional substrate

Step 112‧‧‧ forming a detachment photoresist layer on the three-dimensional substrate having the basal color layer

Step 113‧‧‧ is attached to the three-dimensional substrate by a stereo reticle

Step 114‧‧‧ Exposure

Step 115‧‧‧ remove the exposed photoresist layer that is not exposed and form a pattern space

Step 116‧‧‧Removing the base color layer below the pattern space formed by the photoresist layer

Step 117‧‧‧ forming at least one film layer on the three-dimensional substrate having the pattern space

Step 118 ‧ ‧ away from the photoresist layer to form a thin film pattern structure

Step 121‧‧‧ forming a base photoresist layer on a substrate

Step 122‧‧‧ forming a detachment photoresist layer on the substrate having the underlying photoresist layer

Step 123‧‧‧ affixed to the substrate with a photomask

Step 124‧‧‧ Exposure

Step 125‧‧‧Removing the exposed photoresist layer, the base photoresist layer, and forming a pattern space

Step 126‧‧ ‧ forming at least one film layer on the substrate having the pattern space

Step 127‧‧‧ away from the photoresist layer to form a thin film pattern structure

Step 131‧‧‧ Forming a base photoresist layer on a three-dimensional substrate

Step 132‧‧‧ forming a germanium photoresist layer on the substrate having the base photoresist layer

Step 133‧‧‧ attaching to the stereo substrate with a stereo reticle

Step 134‧‧ exposure

Step 135‧‧‧ removing the exposed photoresist layer, the base photoresist layer, and forming a pattern space

Step 136‧‧‧ forming at least one film layer on the three-dimensional substrate having the pattern space

Step 137‧‧ ‧ away from the photoresist layer to form a thin film pattern structure

1A-1D is a number of specific embodiments of a flow chart of a method for fabricating a thin film pattern of the present invention.

2A-2B is an enlarged front and partial cross-sectional view showing a specific embodiment of a substrate having a thin film pattern of the present invention.

3A-3F is a schematic cross-sectional view showing the manufacturing flow of Fig. 1D of the present invention.

4A-4G is a schematic cross-sectional view showing the manufacturing flow of Fig. 1B of the present invention.

Fig. 5 is another embodiment of the substrate having a thin film pattern of the present invention.

Fig. 6 is still another embodiment of the substrate having a thin film pattern of the present invention.

According to an embodiment of the present invention, the present invention utilizes the technical means of the photoresist stripping process to realize the technical effect of one mask, no etching or one etching, and achieves the special technical effect of seamless film pattern making. Hereinafter, several embodiments will be described to explain the specific embodiments of the present invention.

Please refer to FIG. 1A first, which illustrates a specific embodiment of a flow chart of a method for fabricating a thin film pattern of the present invention, comprising the following steps:

Step 101: Form a base color layer on a substrate. The base color layer may be a metal thin film layer, an inorganic metal oxide thin film layer, a non-metal oxide thin film layer, or a non-metal thin film layer, and further constitute various colors such as transparent color, black, white, gold, silver, and the like.

Step 102: Form a germanium photoresist layer on the substrate having the base color layer. The Lift-off Photoresist Layer will be used as a sacrificial layer.

Step 103: attaching to the substrate with a photomask. The reticle has a structure of a desired film pattern.

Step 104: Exposure.

Step 105: remove the detached photoresist layer that is not exposed, and form a pattern space. After exposure, the unexposed detachment photoresist layer can be removed by the developer to form a pattern space on the photoresist layer. The pattern space away from the photoresist layer exposes the base layer.

Step 106: Remove the base color layer below the pattern space formed by the photoresist layer. Since the photoresist layer forms a pattern space, the underlying color layer below the photoresist layer is partially exposed, that is, part of the pattern space. The pattern space of the base color layer can be etched by using different etching liquids required for the base color layer. The pattern space of the base color layer exposes the substrate. This step requires only one etching.

Step 107: Form at least one thin film layer on the substrate having the pattern space. The at least one film layer can cover the space exposed by the substrate in the pattern space and the photoresist layer, and the film layers of different layers can exhibit different color effects. For example, only one layer of gold film or silver foil film; or one layer of gold, one layer of silver; and so on. The at least one film layer may be selected from any combination of the following: a metal film layer, an inorganic metal oxide film layer, a non-metal oxide film layer, and a non-metal film layer. The method of forming the film layer can be performed by a sputtering method, an evaporation method, or a spray method.

Step 108: Removing the germanium photoresist layer to form a thin film pattern structure. When the photoresist layer is removed, at least one film layer is left to fill the entire pattern space to form a thin film pattern. The film pattern will be seamlessly connected to the base layer.

It can be seen that the method for fabricating the thin film pattern of FIG. 1A of the present invention can complete the production of the thin film pattern with only one mask and one etching, and realize the special technical effect of seamlessly connecting the thin film pattern and the base color layer. And achieve simple process, low cost, high yield Special technical effects.

Please refer to FIG. 1B, which illustrates a specific embodiment of a method for fabricating a three-dimensional substrate with a thin film pattern according to the present invention, comprising the following steps:

Step 111: Form a base color layer on a three-dimensional substrate.

Step 112: Form a germanium photoresist layer on the three-dimensional substrate having the base color layer.

Step 113: attaching to the three-dimensional substrate with a stereo reticle.

Step 114: Exposure.

Step 115: Removing the detached photoresist layer that is not exposed, and forming a pattern space.

Step 116: Removing the base color layer below the pattern space formed by the photoresist layer.

Step 117: Form at least one thin film layer on the three-dimensional substrate having the pattern space.

Step 118: Detach the photoresist layer to form a thin film pattern structure.

Comparing FIG. 1B with FIG. 1A, it can be found that the difference between the two is that the first panel is applied to the three-dimensional substrate, and the three-dimensional mask (or thin film mask) is used, and the rest are the same, and will not be further described herein.

In the embodiment of Fig. 1B, at least one of the film layers may be formed at a solid portion. In this part, the current conventional technology cannot be made, and there are many defects. In other words, by using the method for fabricating the three-dimensional substrate with the thin film pattern of the present invention, the special technical effect of the thin film pattern layer on the three-dimensional portion of the three-dimensional substrate can be achieved.

Next, please refer to FIG. 1C, which illustrates another specific embodiment of a flow chart of a method for fabricating a thin film pattern of the present invention, which comprises the following steps:

Step 121: Form a base photoresist layer on a substrate. The base photoresist layer is similar to the base color layer of FIG. 1A, and is used as a permanent layer, and can be formed into various colors such as transparent color, black, white, gold, silver, and the like in one step.

Step 122: Form a germanium photoresist layer on the substrate having the base photoresist layer. The Lift-off Photoresist Layer will be used as a sacrificial layer.

Step 123: attaching to the substrate with a photomask. The reticle has a structure of a desired film pattern.

Step 124: Exposure.

Step 125: removing the exposed photoresist layer, the base photoresist layer, and forming a pattern space. After exposure, the unexposed detachment photoresist layer and the base photoresist layer can be removed by the developer to form a pattern space on the photoresist layer and the base photoresist layer. The pattern space separating the photoresist layer from the base photoresist layer exposes the substrate.

Step 126: Form at least one thin film layer on the substrate having the pattern space. The at least one film layer can cover the space exposed by the substrate in the pattern space and the photoresist layer, and the film layers of different layers can exhibit different color effects. For example, only one layer of gold film or silver foil film; or one layer of gold, one layer of silver; and so on. The at least one film layer may be selected from any combination of the following: a metal film layer, an inorganic metal oxide film layer, a non-metal oxide film layer, and a non-metal film layer.

Step 127: Removing the germanium from the photoresist layer to form a thin film pattern structure. When the photoresist layer is removed, at least one film layer is left to fill the entire pattern space. Film into a pattern. The thin film pattern will be seamlessly connected to the base photoresist layer.

It can be found that the method for fabricating the thin film pattern of the first embodiment of the present invention utilizes the separation process and exposes and develops the two layers of photoresist at one time, and the film pattern can be completed by using only one mask and no etching. A special technical effect of achieving seamless connection of the thin film pattern and the base photoresist layer. And achieve special technical effects of simple process, low cost and high yield.

Next, please refer to FIG. 1D, which illustrates another specific embodiment of a flow chart of a method for fabricating a three-dimensional substrate with a thin film pattern according to the present invention, comprising the following steps:

Step 131: Form a base photoresist layer on a three-dimensional substrate.

Step 132: Form a germanium photoresist layer on the substrate having the base photoresist layer.

Step 133: attaching to the three-dimensional substrate with a stereo reticle.

Step 134: Exposure.

Step 135: removing the exposed photoresist layer, the base photoresist layer, and forming a pattern space.

Step 136: Form at least one thin film layer on the three-dimensional substrate having the pattern space.

Step 137: Removing the germanium from the photoresist layer to form a thin film pattern structure.

Comparing the 1D and 1C, it can be found that the difference between the two is that the 1D image is applied to the three-dimensional substrate, and the three-dimensional mask (or film mask) is used, and the rest are the same, and will not be described here.

In the embodiment of Fig. 1D, at least one of the film layers may be formed at a solid portion. In this part, the current conventional technology cannot be made, and there are many defects. In other words, by using the method for fabricating the three-dimensional substrate with the thin film pattern of the present invention, the special technical effect of the thin film pattern layer on the three-dimensional portion of the three-dimensional substrate can be achieved.

2A and 2B are enlarged front and partial cross-sectional views of a specific embodiment of a substrate 1 having a thin film pattern according to the present invention, and FIG. 2B is an enlarged schematic view of a portion 2 along the AA cross section in FIG. 2A. . The substrate 1 having a thin film pattern structure includes a three-dimensional substrate 10, at least one thin film pattern layer 61 and a base photoresist layer 21 (that is, a peripheral pattern layer). The thin film pattern layer 61 is disposed on the three-dimensional substrate 10 . The base photoresist layer 21 is disposed on the three-dimensional substrate 10 and seamlessly surrounds the thin film pattern layer 61. Specifically, the pattern aspect of FIG. 2A can be presented. As can be seen from FIG. 2B, the thin film pattern layer 61 is disposed on the three-dimensional portion of the three-dimensional substrate 10 and is seamlessly surrounded by the base photoresist layer 21. To make the three-dimensional pattern effect of FIG. 2A and FIG. 2B, the production flow of FIG. 1B can be employed. Hereinafter, a method of fabricating the substrate having the thin film pattern structure of the present invention will be specifically described with the flow of the first DD and the flow chart of the production method of the third embodiment.

In the embodiment of FIG. 1D, steps 131 and 132 may be described in FIG. 3A, and the base photoresist layer 20 and the detachment photoresist layer 30 are sequentially formed on the three-dimensional substrate 10.

FIG. 3B illustrates a step 133 in which a stereoscopic mask 40 is attached to the three-dimensional substrate 10, wherein the stereoscopic mask 40 is provided with a pattern structure 41. Here, the so-called three-dimensional mask 40 can be realized by a film type mask and a bonding aid.

Figure 3C illustrates the exposure of step 134, with exposure to ultraviolet light 50.

3D is an enlarged view of a portion 3 of FIG. 3C to clearly appear in performing step 135: removing the exposed photoresist layer 30, the base photoresist layer 20, and forming a pattern space 80. The structure of the photoresist layer 31 is separated. It can be found that the photoresist layer 31 is an inverted trapezoid, which is different from the base photoresist layer 21. Because of the special structure of the photoresist layer 31, it can be assisted The film layer formed thereon is easily removed.

Figure 3E illustrates step 136 of forming at least one film layer 60 on the solid substrate having the pattern space. It can be seen that the original pattern space 80 is filled with the film layer 60, and at the same time, the film layer 60 is formed on the photoresist layer 31 which is not removed by the developer. The film layer 60 formed on the photoresist layer 31 is removed along with the subsequent detachment step.

The 3F figure illustrates the step 137 of removing the photoresist layer 31 from the photoresist layer to form a thin film pattern structure. In the 3F, it can be clearly seen that only the thin film layer 60 is left in the three-dimensional portion on the three-dimensional substrate 10, and the remaining portions are covered by the base photoresist layer 21. Thus, the pattern structure of FIG. 2B is constructed.

In the embodiment of FIG. 1B, step 111 and step 112 are illustrated in FIG. 4A, and the base color layer 70 and the detachment photoresist layer 30 are sequentially formed on the three-dimensional substrate 10.

FIG. 4B illustrates a step 101 in which a three-dimensional mask 40 is attached to the three-dimensional substrate 10, wherein the stereoscopic mask 40 is provided with a pattern structure 41. Here, the so-called three-dimensional mask 40 can be realized by a film type mask and a bonding aid.

Figure 4C illustrates the exposure of step 114, with exposure to ultraviolet light 50.

4D is an enlarged view of a portion 3 of FIG. 4C for clearly appearing in performing step 115: removing the unexposed photoresist layer 30 and forming a pattern space 80, leaving the photoresist layer 31 Structure. It can be seen that the photoresist layer 31 is an inverted trapezoid, which is different from the base layer 70. Because of the special structure of the photoresist layer 31, it is possible to assist the film layer subsequently formed thereon to be easily removed.

Figure 4E is an enlarged view of a portion 3 of the 4C figure to clearly appear in the execution step 116: The structure of the base color layer 71 formed by the base color layer 70 under the pattern space 80 formed by the photoresist layer 30 is removed. It can be seen that the detachment photoresist layer 31 is an inverted trapezoid, which is different from the basal color layer 71.

The 4Fth diagram illustrates the step 117 of forming at least one film layer 60 on the three-dimensional substrate having the pattern space 80. It can be seen that the original pattern space 80 is filled with the film layer 60, and at the same time, the film layer 60 is formed on the photoresist layer 31 which is not removed by the developer. The film layer 60 formed on the photoresist layer 31 is removed along with the subsequent detachment step.

The 4Gth diagram illustrates the step 118 of removing the photoresist layer 31 from the photoresist layer to form a thin film pattern structure. In Fig. 4G, it can be clearly seen that only the film layer 60 is left in the three-dimensional portion on the three-dimensional substrate 10, and the remaining portions are covered by the base color layer 71.

In the manufacturing method of FIGS. 1A and 1C, the substrate concept may basically be a planar substrate or a three-dimensional substrate. The embodiments of FIGS. 3A-3F and 4A-4G are described with the three-dimensional substrate 10 as an embodiment. Basically, the flow of the planar substrate is the same as that of the three-dimensional substrate, and the difference is only in the form of the substrate, and therefore, no further description is given.

What is important is that the manufacturing method of the film-patterned substrate of the present invention is the same regardless of whether it is applied to a planar substrate or a three-dimensional substrate, and the same technical effect can be achieved by using the reticle once without etching or etching. Moreover, a seamless film pattern on a three-dimensional substrate can be realized, particularly on a three-dimensional substrate, which is completely impossible to achieve by conventional techniques.

In the film-patterned substrate of the present invention, the film pattern may be formed on a planar substrate or may be formed on a three-dimensional substrate. Hereinafter, two embodiments will be further described.

Please refer to FIG. 5, which is another specific embodiment of the substrate 1 with a thin film pattern of the present invention. Example. By using the production flow of FIG. 1B and FIG. 1D, the film patterns 62, 63, and 64 located at the same position can be produced, and the thin film pattern layer 61 located at the three-dimensional portion can be produced.

Next, please refer to Fig. 6, which is still another specific embodiment of the substrate 4 having the thin film pattern of the present invention. The film pattern 66 located at the plane portion can be produced by the production flow of the first and second drawings. Obviously, the entire surface of the substrate 4 includes only the base photoresist layer 21 and the thin film pattern 66, and the thin film pattern 66 may be formed of a single layer or a multilayer film. Since the present invention uses the photoresist stripping process, a thin film deposition region can be formed by using a single mask, and a multilayer film is formed by depositing a plurality of films in the film deposition region, and unnecessary photoresist is removed. Thereafter, a compact structure of the thin film pattern layer and the non-thin film pattern layer (peripheral pattern layer) is formed.

In particular, since the present invention employs a photomask process, and the film pattern can be a single layer film or a multilayer film, the film pattern can be made very fine, and various special pattern effects can be simulated, for example, laser The effect of the pattern.

Although the technical content of the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention, and any modifications and refinements made by those skilled in the art without departing from the spirit of the present invention should be encompassed by the present invention. Therefore, the scope of protection of this new type is subject to the definition of the scope of the patent application.

10‧‧‧Three-dimensional substrate

21‧‧‧Based photoresist layer

61‧‧‧film pattern layer

Claims (6)

A substrate having a thin film pattern, comprising: a substrate; at least one thin film pattern layer disposed on the substrate; and a peripheral pattern layer disposed on the substrate to seamlessly surround the thin film pattern layer. The substrate having a thin film pattern as claimed in claim 1, wherein the substrate is a planar substrate or a three-dimensional substrate. The substrate having a thin film pattern according to claim 1, wherein the substrate is a three-dimensional substrate, and the thin film pattern layer is disposed on a three-dimensional portion of the three-dimensional substrate. The substrate having a thin film pattern according to claim 1, wherein the at least one thin film pattern layer is selected from any combination of the following: a metal thin film layer, an inorganic metal oxide thin film layer, a non-metal oxide thin film layer, and a non-metal Film layer. The substrate having a thin film pattern according to claim 1, wherein the peripheral pattern layer is a base photoresist layer or is selected from the group consisting of: a metal film layer, an inorganic metal oxide film layer, a non-metal oxide film layer, and a non-metal layer. Metal film layer. The substrate having a thin film pattern according to claim 1, further comprising: a protective layer formed on the thin film pattern layer and the peripheral pattern layer.