TWI867799B - Electronic detection module and electronic detection method - Google Patents

Abstract

An electronic detection interface comprises a substrate structure and a plurality of detection units in array. The substrate structure includes a circuit film, which is of a plurality of circuit units in array. The detection units are disposed on a surface of the substrate structure, and are corresponded to the circuit units in a respect manner. Each of the detection units includes at least one resilient conduction pillar, which is electrically connected to each of the circuit units.

Description

Photoelectric detection module and electronic detection method

The present invention relates to an electronic detection board and a photoelectric detection module using the electronic detection board, in particular, an electronic detection board suitable for sorting electronic components with micrometer-level or sub-micrometer-level electrodes, and a photoelectric detection module using the electronic detection board.

Probe Card is used to perform functional tests on the chips on the wafer with probes before the integrated circuit (IC) is cut or packaged. Specifically, the probe card is a probe fixture provided according to different wafer designs, with a probe needle made of special alloy; when in use, the probe card is installed and electrically connected to a probe/functional analysis device, and the wafer is moved to the probe card so that the probe needle protrudes and contacts the chip of the probe wafer, and an electrical path is formed between the chip, the probe equipment and the wafer to be tested, thereby allowing the probe equipment to power and detect the chips on the wafer to be tested one by one, and record the position of each chip and its characteristic data. Afterwards, the equipment to be tested further sorts the various characteristics of all chips, or removes defective products, to facilitate the continued packaging process. Although integrated circuit technology has developed to very large scale integration (VLSI), ultra large scale integration (ULSI), and even giga scale integration (GLSI), technical barriers such as alloy materials and process accuracy make it impossible for the probe needle to be miniaturized in size to match the high-density integrated circuits: usually the probe card supplies power and detects the chips on the wafer to be tested one by one. Even if the miniaturization technology of the probe needle is improved, only five to ten pairs of probe needles can be used at the same time to detect the corresponding number of chips, which is obviously not enough to cope with the high-density integrated circuits.

In addition, the micro light emitting diode (Micro LED, hereinafter referred to as " μ LED") used in display technology is too small to detect electrical properties, and it is impossible to perform functional testing before the array is transferred to the thin-film transistor (TFT) substrate (hereinafter referred to as "pre-TFT substrate detection"); therefore, each pixel containing the μ LED can be detected and its characteristic data obtained only after the array is transferred to the TFT substrate (hereinafter referred to as "post-TFT substrate detection"). However, when μ LED appears as a single device, the control requirements for wavelength and brightness are not high; but due to the sensitivity of the human eye to color, wavelength and brightness, when the μ LED is viewed in an array, the unsorted μ LED is prone to defects such as unevenness, which in turn affects the visual effect. Therefore, it is very easy to find display defects in post-detection of TFT substrates, but it is difficult to determine whether the defect is caused by μ LED or its corresponding thin-film circuit. In addition, with the development of nano-scale and high-density display technology, the number of nano-LED chips used is expected to increase significantly, which makes it more difficult to eliminate defects in post-detection of TFT substrates.

The purpose of the present invention is to provide an electronic detection board, a photoelectric detection module, and an electronic detection method that can quickly perform large-scale testing and defect judgment.

To achieve the above-mentioned purpose, an electronic detection board according to the present invention includes a substrate structure and a plurality of array detection units. The substrate structure has a circuit layer, and the circuit layer has a plurality of array circuit units; the plurality of detection units are arranged on one side of the substrate structure; each detection unit corresponds to each circuit unit, and each detection unit is provided with at least one elastic conductive column electrically connected to each circuit unit.

In some embodiments, the substrate structure includes a glass substrate.

In some embodiments, the circuit layer of the substrate structure is an active thin film transistor circuit.

In some embodiments, each elastic conductive column is a conductive photoresist.

In some embodiments, each flexible conductive column includes a non-conductive photoresist and a conductive layer covering the non-conductive photoresist.

In some embodiments, each flexible conductive post is defined to have a height of 1-20 microns.

In some embodiments, each flexible conductive post is defined to have a height of 1-10 microns.

In some embodiments, each flexible conductive column has a contact surface, and the contact surface is defined to have a width or diameter of 0.1-20 microns.

In some embodiments, the contact surface is defined to have a width or diameter of 0.1-8 microns.

To achieve the above-mentioned purpose, a photoelectric detection module according to the present invention is installed and electrically connected to a functional analysis device. The photoelectric detection module includes an electronic detection board and a plurality of arrayed image detection units. The plurality of arrayed image detection units are arranged at a predetermined distance from the electronic detection board; wherein the image detection units correspond to the detection units of the electronic detection board respectively, and each image detection unit captures at least one image parameter from the corresponding detection unit.

To achieve the above-mentioned purpose, a photoelectric detection module according to the present invention is installed and electrically connected to a functional analysis device. The photoelectric detection module includes an electronic detection board and a row of multiple image detection units. The row of multiple image detection units is arranged at a predetermined distance from the electronic detection board. The row of image detection units corresponds to one of the rows of detection units of the electronic detection board, and each of the image detection units in the row of image detection units captures at least one image parameter from each of the detection units in the corresponding row and transmits it back to the functional analysis device.

To achieve the above-mentioned purpose, an electronic detection method according to the present invention comprises: preparing an electronic detection board; providing a wafer to be tested, wherein the wafer to be tested is provided with a plurality of micro-semiconductor chips arranged in an array, each of which has at least one electrode; covering the wafer to be tested on the electronic detection board, so that the micro-semiconductor chips of the wafer to be tested correspond to the detection units of the electronic detection board, wherein some of the micro-semiconductor chips are Some or all of the microsemiconductor chips are pre-selected as a detection base; and the wafer to be tested and the electronic detection board are gradually bonded together until the microsemiconductor chips as a detection base are electrically connected to each other by micro-touching or compressing the at least one elastic conductive column of each detection unit corresponding to the at least one electrode pair of each microsemiconductor chip; wherein, some or all of the microsemiconductor chips are pre-selected as the aforementioned detection base at least before this step.

In some embodiments, in the step of gradually bonding the wafer to be tested to the electronic detection board: the detection base is at least one row of the microsemiconductor chips.

To achieve the above-mentioned purpose, an electronic detection method according to the present invention includes: preparing an electronic detection board; providing a wafer to be tested, the wafer to be tested is provided with a plurality of micro-photoelectric chips arranged in an array, each of the micro-photoelectric chips having at least one electrode; covering the wafer to be tested on the electronic detection board so that the micro-photoelectric chips of the wafer to be tested correspond to the detection units of the electronic detection board; and gradually bonding the wafer to be tested and the electronic detection board until the detection base is formed. The micro-photoelectric chips are electrically connected to each other by micro-touching or compressing the at least one elastic conductive column of each corresponding detection unit with the at least one electrode of each micro-photoelectric chip, and at the same time, each image detection unit is allowed to capture the at least one image parameter of each corresponding detection unit; wherein, part or all of the micro-photoelectric chips are pre-selected as the detection basis at least before this step; wherein, capturing the at least one image parameter includes capturing each micro-photoelectric chip.

In some embodiments, in the step of gradually bonding the wafer to be tested to the electronic detection board: the detection basis is at least one row of the micro-photoelectric chips.

In some embodiments, in the step of covering the wafer to be tested on the electronic detection board: the wafer to be tested is set between the electronic detection board and the image detection unit.

In some embodiments, in the step of providing a wafer to be tested: the wafer to be tested has a non-light-transmissive substrate; and in the step of covering the wafer to be tested on an electronic detection board: the wafer to be tested and the electronic detection board are set to the same surface relative to the image detection units.

To achieve the above-mentioned purpose, an electronic detection method according to the present invention includes: preparing an electronic detection board; providing a wafer to be tested, wherein the wafer to be tested is provided with a plurality of micro-photoelectric chips arranged in an array, each of which has at least one electrode; covering the wafer to be tested on the electronic detection board, wherein the row of image detection units corresponds to one of the rows of detection units of the electronic detection board, and each of the image detection units in the row of image detection units corresponds to each of the detection units in the row of detection units; and gradually bonding the wafer to be tested and the electrode. The sub-detection board is provided until the micro-photoelectric chips as a detection basis are electrically connected to each other by micro-touching or compressing the at least one elastic conductive column of each detection unit corresponding to the at least one electrode of each micro-photoelectric chip, and at the same time, each image detection unit pair is made to capture the at least one image parameter of each detection unit corresponding to the image detection unit; wherein, part or all of the micro-photoelectric chips are pre-selected as the detection basis at least before this step; wherein, capturing the at least one image parameter includes capturing each micro-photoelectric chip.

In some embodiments, in the step of gradually bonding the wafer to be tested to the electronic detection board: the detection basis is at least one row of the micro-photoelectric chips.

In some embodiments, in the step of covering the wafer to be tested on the electronic detection board: the wafer to be tested is set between the electronic detection board and the image detection units.

In some embodiments, in the step of providing a wafer to be tested: the substrate to be tested has a wafer substrate, the micro-photoelectric chips are formed based on the wafer substrate, and the wafer substrate is a non-light-transmissive substrate relative to the light emitted by the micro-photoelectric chips; and in the step of covering the wafer to be tested on an electronic detection board: the wafer to be tested and the electronic detection board are set to the same surface relative to the image detection units.

As mentioned above, in the electronic detection board, photoelectric detection module, and electronic detection method of the present invention, a plurality of detection units are arranged in an array on a substrate structure, each detection unit has at least one elastic conductive column, and each elastic conductive column is allowed to be deformed under pressure. The wafer to be tested is placed on the electronic detection board, so that the elastic conductive column corresponds to the micro-photoelectric chip or micro-semiconductor chip, and the wafer to be tested and the electronic detection board are gradually attached, and part or all of the elastic conductive column is micro-touched or compressed and deformed, so that the micro-semiconductor chip or micro-photoelectric chip is electrically connected to the elastic conductive column and can be detected. In this way, the above-mentioned micro-semiconductor chips or micro-photoelectric chips are tested in array or row by row, so that the electronic detection board, photoelectric detection module, and electronic detection method of the present invention can be applied to high-density integrated circuits, and further matched with a row or array of image detection units to detect high-density micro-photoelectric chips.

10:Electronic detection board

100, 100a, 100b: Substrate structure

S1: Noodles

120, 120a, 120b: substrate

120b1: Glass substrate

120b2: Soft material

140: Circuit layer

142: Circuit unit

1422: Conductive connection pad

200, 200b: Detection of structural layers

202, 202b: Detection unit

2022, 2022a, 2022b: Elastic conductive columns

2022a1: Non-conductive photoresist

2022a2: Conductive layer

h: height

TS: Contact surface

30, 30a: Photoelectric detection module

d:Predetermined distance

32, 32a: Image detection device

320, 320a: substrate structure

324, 324a: Image detection unit

40: Functional analysis equipment

42:Working platform

60: Wafer to be tested

62: Microsemiconductor chip

622:Electrode

70: Wafer to be tested

72: Micro-photoelectric chip

722:Electrode

S10-S16, S16a, S18a, S20-S26, S30-S36: Steps

Dt: Flip direction

Figure 1A is a schematic top view of an embodiment of the electronic detection board of the present invention.

Figure 1B is a partial schematic diagram of Figure 1A.

FIG. 1C is a partial schematic diagram of the substrate structure 100 in FIG. 1A .

Figure 1D is a partial cross-sectional schematic diagram along the 1D-1D cutting line in Figure 1B.

Figure 1E is a partial cross-sectional schematic diagram of another embodiment of the electronic detection board of the present invention.

Figure 1F is a partial cross-sectional schematic diagram of another embodiment of the electronic detection board of the present invention.

Figure 2 is a system schematic diagram of an embodiment of the photoelectric detection module of the present invention applied to a functional analysis device.

Figure 3A is a partial schematic diagram of Figure 2.

Figure 3B is a partial schematic diagram of Figure 3A from another viewing angle.

Figure 4A is a partial schematic diagram of another embodiment of the photoelectric detection module of the present invention.

FIG. 4B is a partial schematic diagram of FIG. 4A from another perspective. FIG. 5A and FIG. 5B are flow charts of different embodiments of the electronic detection method applicable to micro-semiconductor chips of the present invention.

Figure 6A is a schematic diagram of the configuration drawn according to the electronic detection method of Figures 5A and 5B.

Figure 6B is a partial schematic diagram of Figure 6A from another viewing angle.

Figure 6C is a partial schematic diagram of Figure 6B.

FIG7 is a flow chart of an embodiment of the electronic detection method of the present invention applicable to the micro-photoelectric chip and the photoelectric detection module.

FIG8A is a schematic diagram of the configuration drawn according to the electronic detection method of FIG7.

Figure 8B is a partial schematic diagram of Figure 8A from another viewing angle. Figure 8C is a partial schematic diagram of Figure 8B.

FIG9 is a flow chart of another embodiment of the electronic detection method of the present invention applicable to the micro-photoelectric chip and the photoelectric detection module.

Figure 10 is a partial schematic diagram of another embodiment of Figure 1B.

The following will refer to the relevant figures to illustrate the electronic devices and manufacturing methods according to some embodiments of the present invention, wherein the same components will be described with the same reference symbols.

An electronic detection board of the present invention includes a substrate structure and a plurality of arrayed detection units. The substrate structure has a circuit layer, and the circuit layer has a plurality of arrayed circuit units; the plurality of detection units are arranged on one surface of the substrate structure; each detection unit corresponds to each circuit unit, and each detection unit is provided with at least one elastic conductive column electrically connected to each circuit unit, and each elastic conductive column is allowed to deform under pressure. By placing a wafer to be tested with a plurality of arrayed micro-semiconductor chips or micro-photoelectric chips on an electronic detection board and gradually fitting the two together, part or all of the elastic conductive pillars are micro-touched or compressed and deformed, so that at least one electrode of the micro-semiconductor chips or micro-photoelectric chips is electrically connected to the elastic conductive pillars and can be detected; in this way, the above-mentioned micro-semiconductor chips or micro-photoelectric chips are detected in an array or row by row, so that the electronic detection board, photoelectric detection module, and electronic detection method of the present invention can be applied to high-density integrated circuits, and further matched with a row or array image detection unit to detect high-density micro-photoelectric chips, which are all different implementations of the electronic device of the present invention. Each implementation is described as follows.

[Electronic detection board]

FIG. 1A is a schematic top view of one embodiment of the electronic detection board of the present invention; FIG. 1B is a partial schematic view of FIG. 1A; FIG. 1C is a detailed schematic view of the substrate structure 100 in FIG. 1A; FIG. 1D is a schematic cross-sectional view along the 1D-1D cut line in FIG. 1B; and FIG. 1E and FIG. 1F are schematic partial cross-sectional views of other embodiments of the electronic detection board of the present invention, respectively.

In this embodiment, referring to FIGS. 1A to 1C , an electronic detection board 10 includes a substrate structure 100 and a plurality of arrayed detection units 202. The substrate structure 100 has a circuit layer 140, and the circuit layer 140 has a plurality of arrayed circuit units 142; the plurality of arrayed detection units 202 are disposed on a surface S1 of the substrate structure 100, for example, the surface having the circuit layer 140; each detection unit 202 corresponds to each circuit unit 142, and each detection unit 202 has at least one terminal electrically connected to each circuit unit 142. 1 Elastic conductive pillar 2022; wherein, the number of elastic conductive pillars 2022 included in each detection unit 202 is at least one, or is equal to the number of electrodes possessed by the electronic component to be detected; as shown in FIGS. 1A and 1B of this embodiment, each detection unit 202 is represented by a pair of elastic conductive pillars 2022, which can correspond to and detect an electronic component having one or a pair of electrodes.

Specifically, as shown in FIGS. 1A and 1B , the electronic detection board 10 is further described. The electronic detection board 10 includes a substrate structure 100 and a detection structure layer 200 including a plurality of detection units 202 in an array. The substrate structure 100 has a substrate 120 and a circuit layer 140 laid on the substrate 120. The circuit layer 140 includes a plurality of rows (or a plurality of lines, or the intersection of a plurality of rows and a plurality of lines) of lines (not numbered), and a plurality of circuit units 142 in an array defined on the lines; each detection unit 202 is provided with at least one elastic conductive column 2022; wherein each circuit unit 142 of the circuit layer 140 corresponds to the elastic conductive column 2022 of each detection unit 202. As shown in FIG1C , each circuit unit 142 of the present embodiment is defined at the intersection of rows and columns of the circuit; in addition, each circuit unit 142 may be further provided with a conductive connection pad (not shown) at the portion of each flexible conductive column 2022. The conductive connection pad may be understood as improving the electrical connection between the flexible conductive column 2022 of each detection unit 202 and the circuit, and may also provide a scope for defining or identifying the circuit unit 142. It should be noted that the layout of the circuit, such as the intersection of rows and columns being electrically connected in parallel or in series, is foreseeable, and the present invention only requires that each flexible conductive column 2022 is electrically connected to the circuit. Referring again to FIGS. 1A and 1B , the detection structure layer 200 including a plurality of detection units 202 in an array corresponds to the circuit layer 140 including a plurality of circuit units 142 in an array. The plurality of detection units 202 in an array are disposed on the surface S1 of the substrate structure 100, that is, the plurality of detection units 202 in an array are disposed on the surface of the substrate 120 on which the circuit layer 140 is disposed; each of the detection units 202 shown in FIG. 1B corresponds to each of the circuit units 142 shown in FIG. 1C , and each of the detection units 202 is provided with at least one elastic conductive column 2022, and each of the elastic conductive columns 2022 is provided with at least one elastic conductive column 2022. 022 corresponds to and is electrically connected to each circuit unit 142 of the line; as shown in Figures 1A and 1B of this embodiment, each detection unit 202 is shown with a pair of elastic conductive posts 2022, each detection unit 202 corresponds to each circuit unit 142 of the line, and each elastic conductive post 2022 in each detection unit 202 corresponds to and is electrically connected to the rows and columns in each circuit unit 142 of the line.

In this embodiment, the substrate 120 of the substrate structure 100 may be a glass substrate, and the circuit layer 140 disposed on the glass substrate may include a passive thin film matrix (PM) which is manufactured by a thin film process; however, other processes with a cost equivalent to or lower than that of the thin film process may also replace the thin film process of the present invention; in addition, the substrate 120 may be selected in any manner, even if the glass substrate is replaced by a silicon wafer substrate, the circuit layer 140 includes an active thin film matrix (AM) based on a glass substrate and including transistors, or the circuit layer 140 is a complementary metal oxide semiconductor (CMOS) formed on a silicon wafer substrate. Metal-Oxide-Semiconductor, CMOS) can also achieve the same effect and help simplify the external receiving circuit. Even though its cost is higher than the passive type, it is not a problem of this invention.

As shown in FIG. 1D , each flexible conductive column 2022 is disposed on the glass substrate 120 of the substrate structure 100, and each flexible conductive column 2022 is a conductive photoresist made by mixing photoresist with conductive material. The material of the flexible conductive column 2022 is not limited to positive or negative photoresist, and the conductive material may include metal materials with higher conductivity such as copper, silver, and alloys, as long as each flexible conductive column 2022 is allowed to be slightly deformed under pressure and can be electrically connected to the circuit layer 140 directly or indirectly (through the conductive connection pad 1422). Each elastic conductive column 2022 is defined to have a height h between 1-20 microns, or further defined to be between 1-10 microns; wherein the height h can be determined in accordance with the size of the micro-semiconductor chip/micro-photoelectric chip to be detected and the process accuracy, as long as the height h has space to allow each elastic conductive column 2022 to withstand micro-compression deformation. It is worth noting that the micro-semiconductor chip/micro-photoelectric chip mentioned in this specification is not limited to the chip itself being at the micron level and does not cover chip sizes above the micron level (such as the millimeter level) or below the micron level (such as the nanometer level). Instead, it mainly includes micro-semiconductor chips/micro-photoelectric chips with chip sizes ranging from the millimeter level to below the micron level, and micro-semiconductor chips/micro-photoelectric chips with electrode sizes at the micron level (such as several microns, tens of microns, or hundreds of microns) or below the micron level (such as several nanometers, tens of nanometers, hundreds of nanometers, or below the nanometer level); therefore, the chip itself is at the millimeter level and the electrode is at the micron level, which should also be interpreted as being within the scope of the technical effectiveness of the present invention.

In addition, each elastic conductive column 2022 is manufactured according to a predetermined column shape, such as a rectangular column or a circular column or other column shapes (not shown in the figure). However, after forming, it may not be possible to maintain the appearance of the manufacturing process. Therefore, each elastic conductive column 2022 only needs to maintain the column shape so that the upper part of the column can bear the force. The definition of the upper part bearing the force includes the column cone, convex arc, top surface, top (position The upper part of the column (including the upper range of the cone, convex arc, and top surface) receives a vertical force parallel to the axis of the column or a non-vertical force non-parallel to the axis of the column. As for the appearance of each elastic conductive column 2022 in other aspects, it is not required by the present invention; usually, the upper part of each elastic conductive column 2022 is made into a cone, which is slightly deformed into a convex arc or a top surface like a platform during forming. As shown in Figures 1B and 1D, each elastic conductive column 2022 is further defined as a contact surface TS for contacting the electrode of the micro-semiconductor chip/micro-photoelectric chip. The contact surface TS is defined as having a width or diameter of 0.1-20 microns, or further defined as having a width or diameter of 0.1-8 microns. It is understandable that the appearance of the contact surface TS is not limited to a plane, a curved surface, a cone, etc., as long as the area is sufficient to contact the electrode of the micro-semiconductor chip/micro-photoelectric chip.

As shown in FIG. 1E and FIG. 1F, substrate structures 100a and 100b of different embodiments are shown. In the substrate structure 100a of FIG. 1E, each flexible conductive column 2022a is disposed on the glass substrate 120a of the substrate structure 100a; specifically, in this embodiment, an array of non-conductive photoresists 2022a1 is first arranged on the glass substrate 120a, and then a continuous conductive layer 2022a2 is sputter-plated on the glass substrate 120a, thereby completely covering each non-conductive photoresist 2022a1 of the aforementioned array of non-conductive photoresists 2022a1. The non-conductive photoresist 2022a1 of each flexible conductive column 2022a is allowed to be slightly deformed under pressure, and in order to retain the possible variations of the implementation of the sputter-plated conductive layer 2022a2, the implementation of the conductive layer 2022a2 can also be discontinuous, as long as the conductive layer 2022a2 can climb up the non-conductive photoresist 2022a1 to form the contact surface TS of each flexible conductive column 2022a, and is sufficient to electrically connect the contact surface TS to the circuit layer (not shown). Therefore, each flexible conductive column 2022a is defined to include a non-conductive photoresist 2022a1 and a conductive layer 2022a2 covering the non-conductive photoresist 2022a1. In the substrate structure 100b of FIG. 1F, the substrate structure 100b includes a substrate 120b and a circuit layer (not shown) disposed on the substrate 120b. The substrate 120b includes a glass substrate 120b1 and a soft material 120b2 disposed on the glass substrate 120b1. The circuit layer (not shown) may be disposed on the soft material 120b2. In this embodiment, the soft material 120b2 may be allowed to be slightly deformed under pressure and may serve as a buffer material, such as a polyimide film (PI Film), a polyester resin film (PET Film) or other materials capable of buffering.

[Photoelectric detection module]

FIG2 is a system schematic diagram of an embodiment of the photoelectric detection module of the present invention applied to a functional analysis device; FIG3A is a partial schematic diagram of FIG2, which only shows the photoelectric detection module, and FIG3B is a partial schematic diagram of FIG3A from another viewing angle; FIG4A is a partial schematic diagram of another embodiment of the photoelectric detection module of the present invention, and FIG4B is a partial schematic diagram of FIG4A from another viewing angle.

Please refer to FIG. 2, FIG. 3A, and FIG. 3B, a photoelectric detection module 30 is installed and electrically connected to a functional analysis device 40. The photoelectric detection module 30 includes the electronic detection board of the aforementioned various embodiments (the electronic detection board 10 is used as an example in this embodiment), and an image detection device 32 including a plurality of arrayed image detection units 324. The electronic detection board 10 and the plurality of arrayed image detection units 324 are installed and electrically connected to the functional analysis device 40, and the two are spaced apart from each other along a predetermined direction at a predetermined distance d. The image detection units 324 correspond to the detection units 202 of the electronic detection plates 10, and each image detection unit 324 captures at least one image parameter from the corresponding detection unit 202. The types and applications of the functional analysis device 40 are extremely wide, and are only briefly described here, and the present invention is not limited thereto. In addition, the array-type image detection units 324 correspond to the array-type detection units 202 to capture image parameters at the same time, which obviously has the advantage of high detection efficiency.

In this embodiment, as shown in FIG. 3B along another viewing angle of the flipping direction Dt of FIG. 3A , the image detection device 32 includes a substrate structure 320 and a plurality of image detection units 324 in an array formed on the substrate structure 320; each image detection unit 324 is a charge-coupled device (CCD), a complementary metal-oxide-semiconductor (CMOS), or other photosensitive elements that can capture images and analyze light intensity and wavelength. In addition, the image detection device 32 can further provide a corresponding grating spectroscopic system or Fourier transform system, polarizing lens system, etc. according to the number and arrangement of the image detection units 324, but the present invention is not limited thereto and will not be elaborated herein. Furthermore, in addition to providing a photosensitive element for capturing images (and analyzing luminous intensity and wavelength), the image detection device 32 can further cooperate with the functional analysis device 40 for functional configuration. For example, at least one image parameter obtained during image capture can be directly transmitted back to the functional analysis device 40, or the aforementioned image parameters can be pre-processed in the image detection device 32 and then transmitted back to the functional analysis device 40. The present invention is not limited thereto, so the "at least one image parameter is transmitted back to the functional analysis device" described in the present invention can be understood to cover directly or indirectly transmitting the original data or processed data back to the functional analysis device 40. It is worth noting that the "each image detection unit 324 captures at least one image parameter from each corresponding detection unit 202" described in the present invention should be understood to include each detection unit 202, or a micro-photoelectric chip driven by each detection unit 202 to emit light (to be described later), or various image parameters including each detection unit 202 and the micro-photoelectric chip.

Please refer to FIG. 4A , which is a photoelectric detection module 30a of a different embodiment. The photoelectric detection module 30a includes an electronic detection board 10 and an image detection device 32a including a row of a plurality of image detection units 324a. The electronic detection board 10 and the row of a plurality of image detection units 324a are installed separately and electrically connected to the functional analysis equipment, and are also spaced apart. As shown in FIG. 4B from another angle along the flipping direction Dt of FIG. 4A , the image detection device 32a includes a substrate structure 320a and a plurality of image detection units 324a in a row (or a single row) formed on the substrate structure 320a. The image detection units 324a in the row correspond to one of the detection units 202 of the electronic detection board 10, and the image detection units 324a in the row capture at least one image parameter from each of the detection units 202 in the corresponding row. In this embodiment, the row of image detection units 324a can only capture image parameters for each of the detection units 202 in one row, or can capture image parameters for the arrayed detection units 202 in the electronic detection board 10 row by row in a step-by-row manner; in other words, by using a row of image detection units 324a and operating row by row, it is also possible to capture image parameters for all of the detection units 202 in the electronic detection board 10. In addition, compared with the arrayed image detection units 324, the row of image detection units 324a obviously has the advantage of reducing costs.

Specifically, the electronic detection board 10 and the image detection devices 32 and 32a in the photoelectric detection modules 30 and 30a are preferably arranged at intervals from each other. However, whether the image detection devices 32 and 32a face the side of the electronic detection board 10 with the detection unit 202 or the opposite side of the electronic detection board 10 with the detection unit 202 can be determined according to the number and type of micro-photoelectric chips to be detected or the process conditions, but is not limited to the present invention, as long as the image detection devices 32 and 32a are sufficient to capture the image parameters of the micro-photoelectric chips to be detected.

[Electronic detection method]

Figures 5A and 5B are flow charts of different embodiments of the electronic detection method applicable to micro-semiconductor chips of the present invention; Figures 6A-6C are configuration diagrams drawn according to the electronic detection method.

In FIG. 5A , the electronic detection method of this embodiment includes steps S10 to S16, and please refer to FIG. 6A at the same time, which is described as follows:

Step S10: Prepare an electronic detection board as described in the above various embodiments (this embodiment takes the electronic detection board 10 as an example). As shown in Figure 6A, the electronic detection board 10 is installed and electrically connected to a functional analysis device 40.

Step S12: Provide a wafer 60 to be tested. As shown in FIG6A , FIG6B is another view from another angle along the flipping direction Dt, the wafer 60 to be tested is provided with a plurality of micro-semiconductor chips 62 arranged in an array, and each micro-semiconductor chip 62 has at least one electrode 622; as shown in FIG6C , each micro-semiconductor chip 62 only shows a single electrode 622.

Step S14: Cover the wafer 60 to be tested on the electronic detection board 10 so that the micro-semiconductor chips 62 of the wafer 60 to be tested correspond to the detection units 202 of the electronic detection board 10, as shown in FIG6A.

Step S16: Gradually bond the wafer 60 to be tested and the electronic detection board 10 until the micro-semiconductor chips 62 serving as a detection base are electrically connected to each other by micro-touching or compressing at least one elastic conductive column 2022 of each corresponding detection unit 202 with at least one electrode 622 of each micro-semiconductor chip 62. Part or all of the micro-semiconductor chips 62 are pre-selected as the detection base at least before step S16.

Specifically, in step S10, the electronic detection board 10 is installed and electrically connected to a work platform 42 of the functional analysis device 40. In step S12, step S14 or step S16, the wafer 60 to be tested can pre-select part or all of the micro-semiconductor chips 62 as the aforementioned detection basis. The so-called detection basis refers to the basis for comprehensive detection or partial detection of the micro-semiconductor chips 62 disposed on the wafer 60 to be tested according to practical needs; for example, the detection basis can be at least one row of the micro-semiconductor chips 62. In addition, for the micro-semiconductor chips 62 pre-selected as the detection basis, one-time detection or segmented detection can be further selected; for example, the electronic detection board 10 is powered on in array or row by row.

In the present invention, the micro-semiconductor chip 62 includes a micro-semiconductor structure other than a micro-photoelectric chip that can emit any light (including visible light or invisible light); for the micro-semiconductor chip 62, at least one electrical parameter of the micro-semiconductor chips 62 in the wafer 60 to be tested as the basis for detection can be obtained by electrically connecting the wafer 60 to be tested and the electronic detection board 10, and by operating a functional analysis device (not shown). In addition, in an embodiment, the wafer 60 to be tested having the micro-semiconductor chip 62 can be further matched with an image detection device (not shown) for capturing image parameters of one or each of the micro-semiconductor chips 62, or the entire wafer 60 to be tested, to achieve the effect of information feedback such as wafer alignment and other defects.

In step S16, the wafer 60 to be tested corresponds to the electronic detection board 10, and at least one electrode 622 of each micro-semiconductor chip 62 in the substrate to be tested corresponds to at least one elastic conductive column 2022 of each corresponding detection unit 202; wherein, in the case where each micro-semiconductor chip 62 in FIG. 6C shows a single electrode 622, each detection unit 202 may only have a single The elastic conductive pillar 2022 corresponds to a single electrode 622 of each micro-semiconductor chip 62; or, each detection unit 202 may be provided with a pair of elastic conductive pillars 2022, and one of the elastic conductive pillars 2022 corresponds to a single electrode 622 of each micro-semiconductor chip 62; it is worth noting that the premise of this electrical connection is that each micro-semiconductor chip 62 corresponds to each detection unit 202. The wafer 60 to be tested and the electronic detection board 10 are gradually bonded together, so that each electrode 622 of each micro-semiconductor chip 62 in the substrate to be tested can be electrically connected to at least one elastic conductive column 2022 of each corresponding detection unit 202 in the electronic detection board 10, regardless of whether the electrical connection between the two is achieved by micro-contact or micro-compression and deformation of the elastic conductive column 2022. Therefore, when the wafer 60 to be tested has a slight warp as a whole, or the height of one electrode 622 of each micro-semiconductor chip 62 has a height difference due to process accuracy, chip tilt or wafer warp, a portion of the elastic conductive pillars 2022 can be slightly compressed and deformed to obtain a buffer, so as not to tilt or collapse to cause a short circuit between two elastic conductive pillars 2022, so that all micro-semiconductor chips 62 in the substrate to be tested can be electrically connected to the elastic conductive pillars 2022. It is worth noting that the substrate structure of the electronic detection board 10 can be further provided with the soft material as described above to enhance the aforementioned buffering effect. In addition, the so-called gradual bonding includes moving the wafer 60 to be tested and the electronic detection board 10 at the same time or moving either the wafer 60 to be tested and the electronic detection board 10 to achieve the effect of gradually shortening the distance between them.

Please refer to FIG. 5B. When the wafer 60 to be tested is preselected as part of the micro-semiconductor chips 62 as the detection basis, the other parts of the wafer 60 to be tested can still be further judged except for the detection basis; or, even for the micro-semiconductor chips 62 that have been preselected as the detection basis, it is still possible to further select row-by-row detection. Therefore, the difference between FIG. 5B and FIG. 5A is that in step S16a, part of the micro-semiconductor chips 62 is used as the detection basis, and after step S16a, there is step S18a: judging whether the detection is completed, if not, then returning to step S16a, again using the remaining part of the micro-semiconductor chips 62 as the detection basis, and then selecting a one-time detection or a segmented detection.

FIG7 is a flow chart of an embodiment of the electronic detection method of the present invention applicable to the micro-photoelectric chip and the photoelectric detection module; FIG8A-8C are configuration diagrams drawn according to the electronic detection method.

In FIG. 7 , the electronic detection method of this embodiment includes steps S20 to S26, and please refer to FIG. 8A at the same time, which is described as follows:

Step S20: Prepare a photoelectric detection module 30. As shown in FIG8A , the photoelectric detection module 30 includes the electronic detection board of the aforementioned various embodiments (the electronic detection board 10 is used as an example in this embodiment), and an image detection device 32 including a plurality of arrayed image detection units 324 as shown in FIG3A , and the photoelectric detection module 30 has been installed and electrically connected to a functional analysis device 40.

Step S22: Provide a wafer 70 to be tested. As shown in FIG8B from another perspective along the flipping direction Dt of FIG8A, the wafer 70 to be tested is provided with a plurality of micro-photoelectric chips 72 arranged in an array, and each micro-photoelectric chip 72 has at least one electrode 722.

Step S24: Cover the wafer 70 to be tested on the electronic detection board 10, so that the micro-photoelectric chips 72 of the wafer 70 to be tested correspond to the detection units 202 of the electronic detection board 10 in the photoelectric detection module 30.

Step S26: Gradually attach the wafer 70 to be tested and the electronic detection board 10 in the photoelectric detection module 30 until the micro-photoelectric chips 72 serving as a detection basis are electrically connected to each other by micro-touching or compressing at least one elastic conductive column 2022 of each corresponding detection unit 202 with at least one electrode 722 of each micro-photoelectric chip 72, and at the same time, each image detection unit 324 in the photoelectric detection module 30 captures at least one image parameter of each detection unit 202 of the corresponding electronic detection board 10. Part or all of the micro-photoelectric chips 72 are pre-selected as the detection basis at least before step S26; capturing at least one image parameter includes capturing each micro-photoelectric chip 72.

This embodiment and its variations are substantially the same as the aforementioned embodiments, except that the components included in the wafer 70 to be tested in FIGS. 8A-8C are a micro-photoelectric chip 72 that can emit light (regardless of visible light or non-visible light), and a photoelectric detection module 30 that can detect the light-emitting micro-photoelectric chip 72. In addition, the micro-photoelectric chip 72 in this embodiment, as shown in FIGS. 8B and 8C, has a double electrode 722 that can correspond to a pair of elastic conductive pillars 2022 of each detection unit 202; it is worth noting that the premise of this electrical connection is still that each micro-semiconductor chip 72 corresponds to each detection unit 202. In addition, this embodiment can also adopt the judgment formula in the flowchart of FIG. 5B based on the pre-selected part of the micro-photoelectric chips 72 of the wafer 70 to be tested as the detection basis, such as the detection basis can be at least one row of the micro-photoelectric chips 72, which will not be further described here.

It is worth noting that when the light emitted by the micro-photoelectric chip 72 is transparent relative to the wafer substrate, for example, a blue μLED chip based on a sapphire (Sapphire, Al ₂ O ₃ ) substrate, the sapphire substrate is a transparent substrate relative to the blue light (visible light) emitted by the blue μLED chip; or for example, an infrared μLED chip based on a silicon substrate, the silicon substrate is a transparent substrate relative to the infrared light (invisible light) emitted by the infrared μLED chip. In step S22 or step S24, the wafer 70 to be tested is disposed between the electronic detection board 10 and the image detection units 324, or the wafer 70 to be tested and the electronic detection board 10 are disposed on the same surface relative to the image detection units 324, which is not limited as long as the image detection device 32 is sufficient to capture the image parameters of the micro-photoelectric chip to be detected. When the light emitted by the micro-photoelectric chip 72 is opaque relative to the wafer substrate, for example, a red μLED chip based on a gallium arsenide (GaAs) substrate, the gallium arsenide substrate is a non-opaque substrate relative to the red light (visible light) emitted by the red micro-light diode chip; in step S22 or step S24, it is preferably arranged between the electronic detection board 10 and the image detection units 324, so that the image detection device 32 can easily capture the image parameters of the micro-photoelectric chip 72 to be detected.

Among them, the image parameters of the micro-photoelectric chip 72 include luminous brightness (regardless of luminous or non-luminous, visible light or non-visible light) and luminous wavelength, so as to identify the brightness and color of the micro-photoelectric chip 72, so as to facilitate the subsequent mass transfer process.

FIG9 is a flow chart of different embodiments of the electronic detection method of the present invention applicable to the micro-photoelectric chip and the photoelectric detection module.

In Figure 9, the electronic detection method of this embodiment includes steps S30 to S36, which are described as follows:

Step S30: Prepare a photoelectric detection module 30a. The photoelectric detection module 30a includes the electronic detection board of the aforementioned various embodiments (the electronic detection board 10 is used as an example in this embodiment), and an image detection device 32a including a row of multiple image detection units 324a as shown in FIG. 4A, and the photoelectric detection module 30a has been installed and electrically connected to the functional analysis device 40.

Step S32: Provide a wafer 70 to be tested. The wafer 70 to be tested is provided with a plurality of micro-photoelectric chips 72 arranged in an array, and each micro-photoelectric chip 72 has at least one electrode 722.

Step S34: Cover the wafer 70 to be tested on the electronic detection board 10, the row of image detection units 324a corresponds to one of the rows of the detection units 202 of the electronic detection board 10, and make the micro-photoelectric chips 72 of the wafer 70 to be tested correspond to the detection units 202 of the electronic detection board 10 in the photoelectric detection module 30a.

Step S36: Gradually attach the wafer 70 to be tested and the electronic detection board 10 in the photoelectric detection module 30a until the micro-photoelectric chips 72 serving as a detection basis are electrically connected to each other by micro-touching or compressing at least one elastic conductive column 2022 of each corresponding detection unit 202 with at least one electrode 722 of each micro-photoelectric chip 72, and at the same time, each image detection unit 324a in the photoelectric detection module 30a captures at least one image parameter of each detection unit 202 of the corresponding electronic detection board 10. Part or all of the micro-photoelectric chips 72 are pre-selected as the detection basis at least before step S36; capturing at least one image parameter includes capturing each micro-photoelectric chip 72.

This embodiment and its variations are roughly the same as the aforementioned electronic detection method, except that a plurality of image detection units 324a in a single row are used as photosensitive elements, and row-by-row operation is performed to capture image parameters of all detection bases selected by the detection units 202 of the electronic detection board 10.

It is worth noting that when the aforementioned electronic detection board, photoelectric detection module, and electronic detection method are used to detect micro-semiconductor chips/micro-photoelectric chips, the electrodes of each chip are usually multiple as shown in Figures 8B and 8C. Taking the micro-LED chip with a single electrode in Figures 6B and 6C as an example, the corresponding detection units 202b can be arranged as a single elastic conductive column 2022b, as shown in Figure 10.

As chips or chip electrodes develop towards nano-scale and high density, corresponding elastic conductive pillars are required. The elastic conductive pillars 2022, 2022a, and 2022b illustrated in the present invention can be miniaturized, such as the contact surface width or diameter or pillar height defined in the above paragraph, and they are elastic and have a buffering effect, thereby allowing the entire wafer to be slightly warped, or the height of each micro-semiconductor chip/micro-photoelectric chip or the electrode height of each micro-semiconductor chip/micro-photoelectric chip to form a flat surface, so that each micro-semiconductor chip/micro-photoelectric chip in the substrate to be tested can be electrically connected to the elastic conductive pillar through micro-deformation of part or all of the elastic conductive pillars. Thus, the electronic detection board, photoelectric detection module, and electronic detection method of the present invention can quickly test and judge defects of micro semiconductor chips/micro photoelectric chips on a large scale, thereby achieving beneficial effects such as reducing costs, improving yields, and shortening working hours.

The above description is for illustrative purposes only and is not intended to be limiting. Any equivalent modification or change made to the invention without departing from the spirit and scope of the invention shall be included in the scope of the patent application attached hereto.

10:Electronic detection board

100: Substrate structure

S1: Noodles

202: Detection unit

2022: Elastic conductive column

Claims (18)

A photoelectric detection module is used to detect a micro-semiconductor chip or a micro-photoelectric chip. The photoelectric detection module is installed and electrically connected to a functional analysis device. The photoelectric detection module includes: an electronic detection board, including: a substrate structure, having a circuit layer; the circuit layer has a plurality of arrayed circuit units; and a plurality of arrayed detection units, which are arranged corresponding to the micro-semiconductor chip or the micro-photoelectric chip, and the detection units are arranged on one side of the substrate structure; The detection unit corresponds to each circuit unit, and each detection unit is provided with at least one elastic conductive column electrically connected to each circuit unit; wherein each elastic conductive column is a conductive photoresist; and a plurality of arrayed image detection units are arranged at a predetermined distance from the electronic detection board; wherein each image detection unit corresponds to each detection unit of the electronic detection board, and each image detection unit captures at least one image parameter from the corresponding detection unit. A photoelectric detection module is used to detect a micro-semiconductor chip or a micro-photoelectric chip. The photoelectric detection module is installed and electrically connected to a functional analysis device. The photoelectric detection module includes: an electronic detection board, including: a substrate structure, having a circuit layer; the circuit layer has a plurality of arrayed circuit units; and a plurality of arrayed detection units, which are arranged corresponding to the micro-semiconductor chip or the micro-photoelectric chip, and the detection units are arranged on one side of the substrate structure; each detection unit corresponds to each circuit unit. , each detection unit is provided with at least one flexible conductive column electrically connected to each circuit unit; wherein each flexible conductive column is a conductive photoresist; and a row of a plurality of image detection units are arranged at a predetermined distance from the electronic detection board; wherein the row of image detection units corresponds to one of the rows of detection units of the electronic detection board, and each of the image detection units in the row of image detection units captures at least one image parameter from each of the detection units in the corresponding row and transmits it back to the functional analysis device. A photoelectric detection module as described in claim 1 or 2, wherein the substrate structure includes a glass substrate. The photodetection module as described in claim 1 or 2, wherein the circuit layer of the substrate structure includes an active thin film transistor matrix. A photodetection module as described in claim 1 or 2, wherein each of the elastic conductive pillars is defined to have a height of 1-20 microns. A photodetection module as described in claim 5, wherein each of the elastic conductive pillars is defined to have a height of 1-10 microns. A photodetection module as described in claim 1 or 2, wherein each of the elastic conductive pillars has a contact surface, and the contact surface is defined to have a width or diameter of 0.1-20 microns. A photodetection module as described in claim 7, wherein the contact surface is defined to have a width or diameter of 0.1-8 microns. An electronic detection method for detecting a micro semiconductor chip or a micro photoelectric chip, the electronic detection method comprising: preparing an electronic detection board, the electronic detection board comprising a substrate structure and a plurality of arrayed detection units; the substrate structure having a circuit layer, the circuit layer having a plurality of arrayed circuit units; the plurality of arrayed detection units corresponding to the micro semiconductor chip or the A micro-photoelectric chip is provided, and the detection units are provided on one side of the substrate structure; each detection unit corresponds to each circuit unit, and each detection unit is provided with at least one elastic conductive column electrically connected to each circuit unit, and each elastic conductive column is a conductive photoresist; wherein the electronic detection board is installed and electrically connected to the functional analysis equipment; a wafer to be tested is provided; wherein the wafer to be tested is arranged There are a plurality of micro-semiconductor chips or a plurality of micro-photoelectric chips in an array, each of which has at least one electrode; the wafer to be tested is covered on the electronic detection board so that the micro-semiconductor chips or the micro-photoelectric chips of the wafer to be tested correspond to the detection units of the electronic detection board respectively; and the wafer to be tested and the electronic detection board are gradually bonded together until the wafer to be tested and the electronic detection board are bonded together. The micro-semiconductor chips or micro-photoelectric chips serving as a detection base are electrically connected to each other by micro-touching or compressing the at least one elastic conductive column of each detection unit corresponding to the at least one electrode pair of each micro-semiconductor chip or each micro-photoelectric chip; wherein, part or all of the micro-semiconductor chips or micro-photoelectric chips are pre-selected as the detection base at least before this step. As described in claim 9, in the step of gradually bonding the wafer to be tested to the electronic detection board: the detection base is at least one row of the micro-semiconductor chips or the micro-photoelectric chips. An electronic detection method comprises: preparing a photoelectric detection module as described in claim 1; providing a wafer to be tested; wherein the wafer to be tested is provided with a plurality of micro-semiconductor chips or a plurality of micro-photoelectric chips in an array, each of which has at least one electrode; covering the wafer to be tested on the electronic detection board so that the micro-semiconductor chips or the micro-photoelectric chips of the wafer to be tested correspond to the detection units of the electronic detection board respectively; and gradually bonding the wafer to be tested and the electronic detection board until the micro-semiconductor chips serving as a detection basis are connected. The semiconductor chip or the micro-photoelectric chip is electrically connected to each other by micro-touching or compressing the at least one elastic conductive column of each corresponding detection unit of each micro-semiconductor chip or each micro-photoelectric chip, and at the same time, each image detection unit is allowed to capture the at least one image parameter of each corresponding detection unit; wherein, part or all of the micro-semiconductor chips or the micro-photoelectric chips are pre-selected as the detection basis at least before this step; wherein, capturing the at least one image parameter includes capturing each micro-semiconductor chip or each micro-photoelectric chip. As described in claim 11, in the step of gradually bonding the wafer to be tested to the electronic detection board: the detection base is at least one row of the micro-semiconductor chips or the micro-photoelectric chips. The electronic detection method as described in claim 11, wherein in the step of covering the wafer to be tested on the electronic detection board: the wafer to be tested is set between the electronic detection board and the image detection units. As described in claim 11, in the step of providing the wafer to be tested: the wafer to be tested has a non-light-transmissive substrate; and in the step of covering the wafer to be tested on the electronic detection board: the wafer to be tested and the electronic detection board are set to the same surface relative to the image detection units. An electronic detection method, comprising: preparing a photoelectric detection module as described in claim 2; providing a wafer to be tested; wherein the wafer to be tested is provided with a plurality of micro-semiconductor chips or a plurality of micro-photoelectric chips in an array, each of which has at least one electrode; covering the wafer to be tested on the electronic detection board, the row of image detection units corresponding to one of the rows of detection units of the electronic detection board, and making each of the image detection units in the row of image detection units correspond to each of the detection units in the row of detection units; and gradually bonding the wafer to be tested and the electronic detection board until the wafer to be tested and the electronic detection board are connected. The micro-semiconductor chips or micro-photoelectric chips serving as a detection basis are electrically connected to each other by micro-touching or compressing the at least one elastic conductive column of the corresponding detection unit of each micro-semiconductor chip or each micro-photoelectric chip, and at the same time, each image detection unit pair is made to capture the at least one image parameter of each detection unit corresponding to each image detection unit; wherein, part or all of the micro-semiconductor chips or micro-photoelectric chips are pre-selected as the detection basis at least before this step; wherein, capturing the at least one image parameter includes capturing each micro-semiconductor chip or each micro-photoelectric chip. As described in claim 15, in the step of gradually bonding the wafer to be tested and the electronic detection board: the detection base is at least one row of the micro-semiconductor chips or the micro-photoelectric chips. The electronic detection method as described in claim 15, wherein in the step of covering the wafer to be tested on the electronic detection board: the wafer to be tested is set between the electronic detection board and the image detection units. As described in claim 15, in the step of providing the wafer to be tested: the substrate to be tested has a wafer substrate, the micro-semiconductor chips or the micro-photoelectric chips are formed based on the wafer substrate, and the wafer substrate is a non-light-transmissive substrate relative to the light emitted by the micro-semiconductor chips or the micro-photoelectric chips; and in the step of covering the wafer to be tested on the electronic detection board: the wafer to be tested and the electronic detection board are set to the same surface relative to the image detection units.