TWI865507B - Copper surface processing equipment - Google Patents
Copper surface processing equipment Download PDFInfo
- Publication number
- TWI865507B TWI865507B TW109109831A TW109109831A TWI865507B TW I865507 B TWI865507 B TW I865507B TW 109109831 A TW109109831 A TW 109109831A TW 109109831 A TW109109831 A TW 109109831A TW I865507 B TWI865507 B TW I865507B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- tank
- treatment
- metal
- copper foil
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 158
- 239000010949 copper Substances 0.000 title claims abstract description 98
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 96
- 238000012545 processing Methods 0.000 title claims abstract description 36
- 238000009713 electroplating Methods 0.000 claims abstract description 31
- 230000001590 oxidative effect Effects 0.000 claims abstract description 14
- 238000011282 treatment Methods 0.000 claims description 58
- 239000011889 copper foil Substances 0.000 claims description 56
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 18
- 239000005751 Copper oxide Substances 0.000 claims description 17
- 229910000431 copper oxide Inorganic materials 0.000 claims description 17
- 239000007864 aqueous solution Substances 0.000 claims description 16
- 239000003638 chemical reducing agent Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 36
- 238000000034 method Methods 0.000 description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 18
- 238000007254 oxidation reaction Methods 0.000 description 18
- 230000003647 oxidation Effects 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 239000007800 oxidant agent Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 238000007747 plating Methods 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- 239000003513 alkali Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 150000004032 porphyrins Chemical class 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000012670 alkaline solution Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229910001416 lithium ion Inorganic materials 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- -1 porphyrin macrocycle Chemical class 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000007773 negative electrode material Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002388 carbon-based active material Substances 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 229940112669 cuprous oxide Drugs 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 2
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 2
- 235000019345 sodium thiosulphate Nutrition 0.000 description 2
- UBXAKNTVXQMEAG-UHFFFAOYSA-L strontium sulfate Chemical compound [Sr+2].[O-]S([O-])(=O)=O UBXAKNTVXQMEAG-UHFFFAOYSA-L 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- DTXLBRAVKYTGFE-UHFFFAOYSA-J tetrasodium;2-(1,2-dicarboxylatoethylamino)-3-hydroxybutanedioate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)C(O)C(C([O-])=O)NC(C([O-])=O)CC([O-])=O DTXLBRAVKYTGFE-UHFFFAOYSA-J 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- NUANKVDTEBIXHW-UHFFFAOYSA-N trimethoxy-(3-methyl-2-propoxyoxiran-2-yl)silane Chemical compound CCCOC1([Si](OC)(OC)OC)OC1C NUANKVDTEBIXHW-UHFFFAOYSA-N 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- BAERPNBPLZWCES-UHFFFAOYSA-N (2-hydroxy-1-phosphonoethyl)phosphonic acid Chemical compound OCC(P(O)(O)=O)P(O)(O)=O BAERPNBPLZWCES-UHFFFAOYSA-N 0.000 description 1
- VKZRWSNIWNFCIQ-WDSKDSINSA-N (2s)-2-[2-[[(1s)-1,2-dicarboxyethyl]amino]ethylamino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)NCCN[C@H](C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-WDSKDSINSA-N 0.000 description 1
- DCCWEYXHEXDZQW-BYPYZUCNSA-N (2s)-2-[bis(carboxymethyl)amino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)N(CC(O)=O)CC(O)=O DCCWEYXHEXDZQW-BYPYZUCNSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- RAIPHJJURHTUIC-UHFFFAOYSA-N 1,3-thiazol-2-amine Chemical class NC1=NC=CS1 RAIPHJJURHTUIC-UHFFFAOYSA-N 0.000 description 1
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 description 1
- VKZRWSNIWNFCIQ-UHFFFAOYSA-N 2-[2-(1,2-dicarboxyethylamino)ethylamino]butanedioic acid Chemical compound OC(=O)CC(C(O)=O)NCCNC(C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-UHFFFAOYSA-N 0.000 description 1
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- BZOVBIIWPDQIHF-UHFFFAOYSA-N 3-hydroxy-2-methylbenzenesulfonic acid Chemical compound CC1=C(O)C=CC=C1S(O)(=O)=O BZOVBIIWPDQIHF-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- LVACOMKKELLCHJ-UHFFFAOYSA-N 3-trimethoxysilylpropylurea Chemical compound CO[Si](OC)(OC)CCCNC(N)=O LVACOMKKELLCHJ-UHFFFAOYSA-N 0.000 description 1
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 description 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- 101100345345 Arabidopsis thaliana MGD1 gene Proteins 0.000 description 1
- 101100207331 Arabidopsis thaliana TPPI gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910021555 Chromium Chloride Inorganic materials 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- ZTVCAEHRNBOTLI-UHFFFAOYSA-L Glycine, N-(carboxymethyl)-N-(2-hydroxyethyl)-, disodium salt Chemical compound [Na+].[Na+].OCCN(CC([O-])=O)CC([O-])=O ZTVCAEHRNBOTLI-UHFFFAOYSA-L 0.000 description 1
- 208000018208 Hyperimmunoglobulinemia D with periodic fever Diseases 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- 239000004153 Potassium bromate Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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- 150000001298 alcohols Chemical class 0.000 description 1
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- DAPUDVOJPZKTSI-UHFFFAOYSA-L ammonium nickel sulfate Chemical compound [NH4+].[NH4+].[Ni+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DAPUDVOJPZKTSI-UHFFFAOYSA-L 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
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- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- FTDUHBOCJSQEKS-UHFFFAOYSA-N borane;n-methylmethanamine Chemical compound B.CNC FTDUHBOCJSQEKS-UHFFFAOYSA-N 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- DLDJFQGPPSQZKI-UHFFFAOYSA-N but-2-yne-1,4-diol Chemical compound OCC#CCO DLDJFQGPPSQZKI-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- JEZFASCUIZYYEV-UHFFFAOYSA-N chloro(triethoxy)silane Chemical compound CCO[Si](Cl)(OCC)OCC JEZFASCUIZYYEV-UHFFFAOYSA-N 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 description 1
- PTEWEFISOFMTTD-UHFFFAOYSA-L disodium;naphthalene-1,2-disulfonate Chemical compound [Na+].[Na+].C1=CC=CC2=C(S([O-])(=O)=O)C(S(=O)(=O)[O-])=CC=C21 PTEWEFISOFMTTD-UHFFFAOYSA-L 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 235000011167 hydrochloric acid Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 229910000358 iron sulfate Inorganic materials 0.000 description 1
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 1
- HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 description 1
- DJQJFMSHHYAZJD-UHFFFAOYSA-N lidofenin Chemical compound CC1=CC=CC(C)=C1NC(=O)CN(CC(O)=O)CC(O)=O DJQJFMSHHYAZJD-UHFFFAOYSA-N 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- ZAUUZASCMSWKGX-UHFFFAOYSA-N manganese nickel Chemical compound [Mn].[Ni] ZAUUZASCMSWKGX-UHFFFAOYSA-N 0.000 description 1
- 229940099596 manganese sulfate Drugs 0.000 description 1
- 239000011702 manganese sulphate Substances 0.000 description 1
- 235000007079 manganese sulphate Nutrition 0.000 description 1
- SQQMAOCOWKFBNP-UHFFFAOYSA-L manganese(II) sulfate Chemical compound [Mn+2].[O-]S([O-])(=O)=O SQQMAOCOWKFBNP-UHFFFAOYSA-L 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- ZPBSAMLXSQCSOX-UHFFFAOYSA-N naphthalene-1,3,6-trisulfonic acid Chemical compound OS(=O)(=O)C1=CC(S(O)(=O)=O)=CC2=CC(S(=O)(=O)O)=CC=C21 ZPBSAMLXSQCSOX-UHFFFAOYSA-N 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
- UQPSGBZICXWIAG-UHFFFAOYSA-L nickel(2+);dibromide;trihydrate Chemical compound O.O.O.Br[Ni]Br UQPSGBZICXWIAG-UHFFFAOYSA-L 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 239000005486 organic electrolyte Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 229920003253 poly(benzobisoxazole) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920013636 polyphenyl ether polymer Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 229940094037 potassium bromate Drugs 0.000 description 1
- 235000019396 potassium bromate Nutrition 0.000 description 1
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical compound [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- WFIZEGIEIOHZCP-UHFFFAOYSA-M potassium formate Chemical compound [K+].[O-]C=O WFIZEGIEIOHZCP-UHFFFAOYSA-M 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- ZNNZYHKDIALBAK-UHFFFAOYSA-M potassium thiocyanate Chemical compound [K+].[S-]C#N ZNNZYHKDIALBAK-UHFFFAOYSA-M 0.000 description 1
- 229940116357 potassium thiocyanate Drugs 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 1
- 229960002218 sodium chlorite Drugs 0.000 description 1
- 239000000176 sodium gluconate Substances 0.000 description 1
- 235000012207 sodium gluconate Nutrition 0.000 description 1
- 229940005574 sodium gluconate Drugs 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 239000001476 sodium potassium tartrate Substances 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- VGTPCRGMBIAPIM-UHFFFAOYSA-M sodium thiocyanate Chemical compound [Na+].[S-]C#N VGTPCRGMBIAPIM-UHFFFAOYSA-M 0.000 description 1
- MILMJAFFMWCPLL-UHFFFAOYSA-J sodium;chromium(3+);disulfate Chemical compound [Na+].[Cr+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O MILMJAFFMWCPLL-UHFFFAOYSA-J 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 235000000346 sugar Nutrition 0.000 description 1
- 150000008163 sugars Chemical class 0.000 description 1
- BUUPQKDIAURBJP-UHFFFAOYSA-N sulfinic acid Chemical compound OS=O BUUPQKDIAURBJP-UHFFFAOYSA-N 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- VWNRYDSLHLCGLG-NDNWHDOQSA-J tetrasodium;(2s)-2-[bis(carboxylatomethyl)amino]butanedioate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)C[C@@H](C([O-])=O)N(CC([O-])=O)CC([O-])=O VWNRYDSLHLCGLG-NDNWHDOQSA-J 0.000 description 1
- UZVUJVFQFNHRSY-OUTKXMMCSA-J tetrasodium;(2s)-2-[bis(carboxylatomethyl)amino]pentanedioate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CC[C@@H](C([O-])=O)N(CC([O-])=O)CC([O-])=O UZVUJVFQFNHRSY-OUTKXMMCSA-J 0.000 description 1
- 238000004324 time-proportional phase incrementation Methods 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- ALVYUZIFSCKIFP-UHFFFAOYSA-N triethoxy(2-methylpropyl)silane Chemical compound CCO[Si](CC(C)C)(OCC)OCC ALVYUZIFSCKIFP-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- OHOTVSOGTVKXEL-UHFFFAOYSA-K trisodium;2-[bis(carboxylatomethyl)amino]propanoate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)C(C)N(CC([O-])=O)CC([O-])=O OHOTVSOGTVKXEL-UHFFFAOYSA-K 0.000 description 1
- RHZZVWTVJHZKAH-UHFFFAOYSA-K trisodium;naphthalene-1,2,3-trisulfonate Chemical compound [Na+].[Na+].[Na+].C1=CC=C2C(S([O-])(=O)=O)=C(S([O-])(=O)=O)C(S(=O)(=O)[O-])=CC2=C1 RHZZVWTVJHZKAH-UHFFFAOYSA-K 0.000 description 1
- ASTWEMOBIXQPPV-UHFFFAOYSA-K trisodium;phosphate;dodecahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.O.O.[Na+].[Na+].[Na+].[O-]P([O-])([O-])=O ASTWEMOBIXQPPV-UHFFFAOYSA-K 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Abstract
一種銅表面之加工裝置,係對於具有被銅覆蓋之表面的物體,加工該表面,該加工裝置具備:第一槽,用於氧化該表面;及第二槽,用於對被氧化之該表面進行電鍍處理。 A copper surface processing device is used for processing the surface of an object having a surface covered with copper. The processing device comprises: a first tank for oxidizing the surface; and a second tank for electroplating the oxidized surface.
Description
本發明係關於銅表面之加工裝置。 The present invention relates to a copper surface processing device.
用於印刷佈線板之銅箔需要與樹脂之密著性。為了提升此密著性,已有藉由蝕刻等將銅箔表面粗化處理以提升物理性黏著力的方法。然而,由印刷佈線板之高密度化或在高頻帶之傳輸損失的觀點而言,銅箔表面亦需要平坦化。為了滿足上述相反的要求,已開發出進行氧化步驟及還原步驟等之銅表面處理方法(參照專利文獻1)。根據該方法,係將銅箔前處理,浸漬於含有氧化劑之藥水,藉此使銅箔表面氧化形成氧化銅之凹凸後,浸漬於含有還原劑之藥水以使氧化銅還原,藉此調整表面的凹凸來整平表面粗度。此外,另開發有在氧化步驟中添加界面活性分子的方法作為利用氧化還原之銅箔處理的密著性改善方法(參照專利文獻2)、在還原步驟後使用胺基噻唑系化合物等在銅箔表面形成保護皮膜的方法(參照專利文獻3)。又,另外開發一種方法,係將絕緣基板之銅導體圖樣的表面粗化而形成有氧化銅層之表面上,藉由化學鍍形成具有分散地分布之金屬粒子的鍍膜(參照專利文獻4)。 Copper foil used for printed wiring boards requires good adhesion to resin. In order to improve this adhesion, there is a method of roughening the surface of copper foil by etching to improve physical adhesion. However, from the perspective of high density of printed wiring boards or transmission loss in high frequency bands, the surface of copper foil also needs to be flattened. In order to meet the above-mentioned opposite requirements, a copper surface treatment method that performs an oxidation step and a reduction step has been developed (see patent document 1). According to this method, the copper foil is pre-treated by immersing it in a solution containing an oxidizing agent to oxidize the surface of the copper foil to form copper oxide bumps, and then immersed in a solution containing a reducing agent to reduce the copper oxide, thereby adjusting the surface bumps to level the surface roughness. In addition, a method of adding interfacial active molecules in the oxidation step as a method of improving the adhesion of copper foil using redox treatment (see Patent Document 2), and a method of using aminothiazole compounds to form a protective film on the surface of copper foil after the reduction step (see Patent Document 3). In addition, a method has been developed in which a film having dispersed metal particles is formed by chemical plating on the surface of a copper oxide layer formed by roughening the surface of a copper conductor pattern on an insulating substrate (see Patent Document 4).
一般而言,金屬的氧化物與未被氧化之金屬相比,其電阻較大。例如,純銅的電阻率為1.7×10-8(Ωm),相較於此,氧化銅的電阻率為1~10(Ωm),氧化亞銅的電阻率為1×106~1×107(Ωm),氧化銅、氧化亞銅的導電性皆比純銅差。因此,為了粗化銅箔表面而使用氧化處理的情況下,其鍍敷方法不使用電鍍而係使用化學鍍(參照專利文獻4)。另一方面,藉由 電鍍使銅粒子附著於銅箔,以使銅箔表面粗化的情況下,由於銅箔表面不存在氧化物,故藉由再度進行電鍍,可以在銅箔的粗化處理面鍍敷其他金屬(專利文獻5、6)。 Generally speaking, metal oxides have a greater electrical resistance than unoxidized metals. For example, the electrical resistivity of pure copper is 1.7×10 -8 (Ωm), while the electrical resistivity of copper oxide is 1~10 (Ωm) and the electrical resistivity of cuprous oxide is 1×10 6 ~1×10 7 (Ωm). The electrical conductivity of copper oxide and cuprous oxide is worse than that of pure copper. Therefore, when oxidation treatment is used to roughen the surface of copper foil, the coating method does not use electroplating but chemical plating (see patent document 4). On the other hand, when copper particles are attached to copper foil by electroplating to roughen the surface of the copper foil, since there is no oxide on the surface of the copper foil, other metals can be plated on the roughened surface of the copper foil by performing electroplating again (Patent Documents 5 and 6).
鍍敷皮膜被要求能承受使用及環境,具有在實用上不造成阻礙之程度的密著性。其手段已知有去除金屬表面的氧化物層以增強金屬鍵,且進行表面粗化以使應力分散並確保密著性(非專利文獻1)。 The coating film is required to withstand use and environment, and have a degree of adhesion that does not cause practical obstacles. The known means include removing the oxide layer on the metal surface to strengthen the metal bond, and roughening the surface to disperse stress and ensure adhesion (Non-patent document 1).
專利文獻1為國際公開WO2014/126193號公報;專利文獻2為日本特表2013-534054號公報;專利文獻3為日本特開平8-97559號公報;專利文獻4為日本特開2000-151096號公報;專利文獻5為日本特許5764700號公報;專利文獻6為日本特許4948579號公報。 Patent document 1 is International Publication No. WO2014/126193; Patent document 2 is Japanese Patent Publication No. 2013-534054; Patent document 3 is Japanese Patent Publication No. 8-97559; Patent document 4 is Japanese Patent Publication No. 2000-151096; Patent document 5 is Japanese Patent No. 5764700; Patent document 6 is Japanese Patent No. 4948579.
非專利文獻1為森河務、中出卓男、橫井昌幸著「鍍敷皮膜的密著性及其改善方法」。 Non-patent document 1 is "Adhesion of coating film and its improvement method" written by Morikawa Tsutomu, Nakaide Takuo, and Yokoi Masayuki.
本發明之目的係提供一種新穎的銅表面之加工裝置。 The purpose of the present invention is to provide a novel copper surface processing device.
通常在金屬表面存在有氧化物層的情況下,由於通電性不佳及難以得到金屬箔與鍍金屬層之密著性等理由,不會直接進行電鍍,而是先以酸處理等去除氧化物後進行。此係因一般而言金屬與鍍金屬層之密著性已知係藉由金屬鍵來確保密著性,若金屬的界面存在有氧化物層,則會阻礙金屬與鍍金屬之金屬鍵,而難以得到密著性。又,若金屬平滑,則應力傳遞至金屬與鍍金屬的界面並集中,容易產生界面剝離。另一方面,在凹凸的界面係與平滑的表面不同,沒有傳遞應力之明確的面。能量傳遞時被認為其一部分使鍍金屬或金屬變形,因而消耗能量,密著力提高。本發明人致力研究的結果得到,藉由本發明之加工裝置使形成於銅表面之氧化物層為平均400nm以下, 成功地在該氧化物層表面以電鍍披覆金屬,藉此將通電性惡劣及金屬鍵被阻礙之影響控制在最小限度,且藉由具有微細凹凸形狀,能夠以錨定效應(anchor effect)提高金屬與鍍金屬的密著力。以往已存在有對於銅表面進行氧化處理或還原處理,或者電鍍處理之技術及裝置,惟,不存在進行氧化處理後進行電鍍之處理技術,其加工裝置亦不存在。如此,本發明人完成了新穎的銅表面之加工裝置。本發明之一實施態樣係一種銅表面之加工裝置,係對於具有被銅覆蓋之表面的物體,加工該表面,該加工裝置具備:第一槽,用於氧化該表面;及第二槽,用於對被氧化之該表面以銅以外的金屬進行電鍍處理。該第二槽可具備陽極及電源。另可具備第三槽,該第三槽用於在將該表面氧化前,對該表面以鹼性水溶液進行鹼處理。另可具備第四槽及/或第五槽,該第四槽用於在該將該表面氧化後且進行電鍍處理前,將被氧化之該表面以還原劑還原,該第五槽用於將被氧化之該表面以溶解劑溶解。該物體可為銅箔、銅粒子、銅粉或被銅鍍之物體。 Usually, when there is an oxide layer on the metal surface, electroplating is not performed directly due to reasons such as poor conductivity and difficulty in obtaining adhesion between the metal foil and the plated layer. Instead, the oxide is removed by acid treatment or the like before the electroplating is performed. This is because in general, it is known that the adhesion between the metal and the plated layer is ensured by metal bonding. If there is an oxide layer at the interface of the metal, it will hinder the metal bonding between the metal and the plated metal, making it difficult to obtain adhesion. In addition, if the metal is smooth, the stress is transferred to the interface between the metal and the plated metal and concentrated, and interface peeling is likely to occur. On the other hand, unlike a smooth surface, there is no clear surface for stress transmission at an uneven interface. When energy is transferred, it is believed that part of it causes the plated metal or the metal to deform, thereby consuming energy and improving adhesion. As a result of the inventor's research, the present invention has been used to make the oxide layer formed on the copper surface less than 400nm on average. The oxide layer surface is successfully coated with metal by electroplating, thereby minimizing the effects of poor electrical conductivity and metal bond obstruction. The fine concave and convex shapes can improve the adhesion between the metal and the plated metal by the anchor effect. In the past, there have been technologies and devices for oxidation treatment or reduction treatment, or electroplating treatment on the copper surface, but there is no technology for electroplating after oxidation treatment, and there is no processing device for it. In this way, the inventor has completed a novel copper surface processing device. One embodiment of the present invention is a copper surface processing device, which processes the surface of an object having a surface covered with copper, and the processing device has: a first tank for oxidizing the surface; and a second tank for electroplating the oxidized surface with a metal other than copper. The second tank may have an anode and a power source. A third tank may also be provided, and the third tank is used to alkaline-treat the surface with an alkaline aqueous solution before oxidizing the surface. A fourth tank and/or a fifth tank may also be provided, and the fourth tank is used to reduce the oxidized surface with a reducing agent after oxidizing the surface and before electroplating, and the fifth tank is used to dissolve the oxidized surface with a dissolving agent. The object may be a copper foil, copper particles, copper powder, or an object plated with copper.
1:第三槽 1: Third slot
11:滾輪 11: Scroll wheel
12:擠壓滾輪 12: Squeeze roller
13:導引滾輪 13: Guide roller
2:第六槽 2: Sixth slot
3:第七槽 3: The seventh slot
4:第一槽 4: First slot
5:第四槽 5: Fourth slot
6:第五槽 6: Fifth slot
7:第二槽 7: Second slot
8:陽極及電源 8: Anode and power supply
100:加工裝置 100: Processing equipment
〔第1圖〕本發明之一實施形態中,表示用於氧化表面之第一槽及用於對被氧化的表面進行電鍍處理之第二槽的概略圖。 [Figure 1] A schematic diagram showing a first tank for oxidizing a surface and a second tank for electroplating the oxidized surface in one embodiment of the present invention.
〔第2圖〕本發明之一實施形態的加工裝置整體的概略圖。 [Figure 2] A schematic diagram of the overall processing device of one embodiment of the present invention.
〔第3圖〕本發明之一實施形態中,設於各槽之間的運送用滾輪的概略圖。 [Figure 3] A schematic diagram of a conveying roller disposed between the grooves in one embodiment of the present invention.
〔第4圖〕本發明之一實施形態中,設於運送用滾輪之擠壓滾輪的概略圖。 [Figure 4] A schematic diagram of an extrusion roller provided on a conveying roller in one embodiment of the present invention.
〔第5圖〕本發明之一實施形態中,設於運送用滾輪之導引滾輪的概略圖。 [Figure 5] A schematic diagram of a guide roller provided on a transport roller in one embodiment of the present invention.
〔第6圖〕實施例及比較例中,氧化物層的厚度與剝離強度之關係圖。 [Figure 6] A graph showing the relationship between the thickness of the oxide layer and the peeling strength in the embodiment and the comparative example.
〔第7圖〕實施例及比較例中,氧化物層的厚度與耐熱劣化率之關係圖。 [Figure 7] A graph showing the relationship between the thickness of the oxide layer and the heat-resistant degradation rate in the embodiment and the comparative example.
〔第8圖〕實施例及比較例中,氧化物層的厚度與耐熱變色ΔE*ab之關係圖。 [Figure 8] A graph showing the relationship between the thickness of the oxide layer and the heat discoloration resistance ΔE*ab in the embodiments and comparative examples.
以下一邊列舉實施例一邊詳細說明本發明的實施形態。又,根據本說明書的記載,發明所屬技術領域中具有通常知識者係明瞭本發明的目的、特徵、優點及其構思,發明所屬技術領域中具有通常知識者可容易地根據本說明書的記載重現本發明。以下記載之發明的實施形態及具體實施例等,係表示本發明的較佳實施態樣,用於例示及說明,不用以限定本發明。發明所屬技術領域中具有通常知識者係明瞭,在本說明書所揭示之本發明的意圖及範圍內,可基於本說明書的記載進行各種修飾。 The following lists the implementation examples and describes the implementation forms of the present invention in detail. In addition, according to the description of this specification, those with ordinary knowledge in the technical field to which the invention belongs will understand the purpose, characteristics, advantages and concept of the present invention, and those with ordinary knowledge in the technical field to which the invention belongs can easily reproduce the present invention according to the description of this specification. The implementation forms and specific embodiments of the invention described below represent the preferred implementation forms of the present invention, which are used for illustration and explanation, and are not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the invention belongs will understand that various modifications can be made based on the description of this specification within the intent and scope of the present invention disclosed in this specification.
用於加工銅表面之裝置的構造:本發明之一實施形態為加工裝置(100),係對具有被銅覆蓋之表面的物體加工其表面,該加工裝置至少具備第一槽(4)及第二槽(7),第一槽(4)用於氧化表面,第二槽(7)用於對被氧化之表面進行電鍍處理。可在第一槽(4)前設置第三槽(1),第三槽(1)用於對銅表面以鹼性水溶液進行鹼處理。此外,第三槽(1)接著可設置第六槽(2)及第七槽(3),第六槽(2)用於以酸進行清洗處理,第七槽(3)用於進行弱鹼處理。並且接續第一槽(4),之後到第二槽(7)為止之間,可以設置第四槽(5)及/或第五槽(6),第四槽(5)用於將被氧化之銅表面以還原劑還原,第五槽(6)用於將被氧化之銅表面以溶解劑溶解。各槽之間及/或整個處理的最初及最後可設置一個以上的水洗槽。此外,各槽較佳具備加熱部及計時器,藉由該等,可設定各槽之處理的溫度或時間。以下參照第2圖來說明銅表面之加工中各槽的功用,第2圖係除了水洗槽之外的所有槽分別具備一個,且使用卷對卷(roll to roll)運送系統之情況的整體裝置概 略圖。又,此裝置構造為一例示,發明所屬技術領域中具有通常知識者能夠由此揭示理解的構造,均包含於本發明之技術範圍。例如,第2圖係將各種類的槽分別設置一個,但亦可各設置數個。 Structure of a device for processing a copper surface: One embodiment of the present invention is a processing device (100) for processing the surface of an object having a surface covered with copper. The processing device has at least a first tank (4) and a second tank (7). The first tank (4) is used to oxidize the surface, and the second tank (7) is used to electroplating the oxidized surface. A third tank (1) can be arranged before the first tank (4). The third tank (1) is used to perform an alkaline treatment on the copper surface with an alkaline aqueous solution. In addition, a sixth tank (2) and a seventh tank (3) can be arranged next to the third tank (1). The sixth tank (2) is used to perform a cleaning treatment with an acid, and the seventh tank (3) is used to perform a weak alkaline treatment. And the fourth tank (5) and/or the fifth tank (6) can be set up between the first tank (4) and the second tank (7). The fourth tank (5) is used to reduce the oxidized copper surface with a reducing agent, and the fifth tank (6) is used to dissolve the oxidized copper surface with a solvent. One or more water washing tanks can be set between the tanks and/or at the beginning and end of the entire treatment. In addition, each tank is preferably equipped with a heating unit and a timer, by which the temperature or time of the treatment of each tank can be set. The function of each tank in the processing of the copper surface is explained below with reference to Figure 2. Figure 2 is a schematic diagram of the overall device in which all tanks except the water washing tank are equipped with one each and a roll-to-roll transport system is used. In addition, this device structure is an example, and any structure that can be revealed and understood by a person with ordinary knowledge in the technical field to which the invention belongs is included in the technical scope of the present invention. For example, Figure 2 sets one slot for each type of slot, but several slots can also be set for each type of slot.
又,如卷對卷運送系統等連續地處理銅構件的情況下,係由滾輪進行對銅構件之通電以進行電鍍,其他通電位置不限定於緊接在用於進行電鍍處理之第二槽(7)的前後,可由其他槽的滾輪通電。 Furthermore, in the case of continuous processing of copper components such as a roll-to-roll conveying system, the copper components are energized by the roller for electroplating. Other energizing positions are not limited to immediately before and after the second tank (7) for electroplating, and the rollers of other tanks may be energized.
於第三槽(1),對銅表面以鹼性水溶液進行鹼處理。因此,第三槽(1)係以對於所使用之鹼具有耐受性之材料來製作。此鹼處理之目的是脫脂。 In the third tank (1), the copper surface is subjected to an alkaline treatment using an alkaline aqueous solution. Therefore, the third tank (1) is made of a material that is resistant to the alkali used. The purpose of this alkaline treatment is degreasing.
於第六槽(2),為了去除自然氧化的皮膜以減少處理不均,對銅表面以酸進行清洗處理。因此,第六槽(2)係以對於所使用之酸具有耐受性之材料來製作。 In the sixth tank (2), the copper surface is cleaned with acid to remove the naturally oxidized film and reduce uneven processing. Therefore, the sixth tank (2) is made of a material that is resistant to the acid used.
於第七槽(3),為了減少處理不均,防止用於清洗處理之酸混入氧化劑,係使用弱鹼溶液對銅表面進行鹼處理。因此,第七槽(3)係以對於所使用之鹼具有耐受性之材料來製作。 In the seventh tank (3), in order to reduce uneven treatment and prevent the acid used for cleaning from mixing with the oxidant, a weak alkaline solution is used to perform alkaline treatment on the copper surface. Therefore, the seventh tank (3) is made of a material that is resistant to the alkali used.
於第一槽(4)進行氧化處理,係使用含有氧化劑之鹼溶液將銅表面氧化,在銅表面形成氧化物。因此,第一槽(4)係以對於所使用之氧化劑及鹼具有耐受性之材料來製作。第一槽(4)可具有僅將銅構件的一部分表面氧化處理的運作方式。例如,能夠使銅構件相對於溶液面為水平來運送,使非處理面不接觸液體。或者,能夠在第一槽(4)內配置液體保持構件(例如海綿),其可包含含有氧化劑之鹼溶液,則銅構件不會直接浸於溶液,僅銅構件的一部分表面接觸液體保持構件來進行氧化處理。 The oxidation treatment in the first tank (4) is to use an alkaline solution containing an oxidant to oxidize the copper surface and form an oxide on the copper surface. Therefore, the first tank (4) is made of a material that is resistant to the oxidant and alkali used. The first tank (4) can have an operation mode of oxidizing only a portion of the surface of the copper component. For example, the copper component can be transported horizontally relative to the solution surface so that the non-treated surface does not contact the liquid. Alternatively, a liquid retaining component (such as a sponge) can be arranged in the first tank (4), which can contain an alkaline solution containing an oxidant, so that the copper component will not be directly immersed in the solution, and only a portion of the surface of the copper component will contact the liquid retaining component for oxidation treatment.
於第四槽(5),使用含有還原劑之鹼性溶液,對被氧化之銅表面進行還原處理。此係為了將形成於銅箔之氧化銅還原,以調整凹凸的數 量及長度。為此,第四槽(5)係以對於所使用之還原劑及鹼具有耐受性之材料來製作。 In the fourth tank (5), an alkaline solution containing a reducing agent is used to reduce the oxidized copper surface. This is to reduce the copper oxide formed on the copper foil to adjust the number and length of the bumps. For this purpose, the fourth tank (5) is made of a material that is resistant to the reducing agent and alkali used.
於第五槽(6)進行溶解處理,將氧化之銅表面以溶解劑溶解。為此,第五槽(6)係以對於所使用之溶解劑具有耐受性之材料來製作。溶解處理之目的是調整被氧化之銅表面的凸部。 The fifth tank (6) is subjected to a dissolution treatment to dissolve the oxidized copper surface with a solvent. To this end, the fifth tank (6) is made of a material that is resistant to the solvent used. The purpose of the dissolution treatment is to adjust the protrusions on the oxidized copper surface.
於第二槽(7),以銅以外的金屬對銅表面進行電鍍。第二槽(7)具備用以電解之陽極及電源。陽極的種類不特別限定,可用鉛板、貴金屬氧化皮膜鈦等不溶性陽極,亦可使用其本身會溶解並電解析出於銅箔等之溶解性陽極。 In the second tank (7), the copper surface is electroplated with a metal other than copper. The second tank (7) is equipped with an anode and a power source for electrolysis. The type of anode is not particularly limited, and an insoluble anode such as a lead plate, a precious metal oxide film titanium, etc. can be used, or a soluble anode that dissolves and electrolyzes into a copper foil, etc. can be used.
水洗槽的水可加熱至與前後的槽相同或相近的溫度,藉此可防止熱膨脹差易導致的皺褶。 The water in the washing tank can be heated to the same or similar temperature as the tanks before and after it, thereby preventing wrinkles that are easily caused by thermal expansion differences.
第二槽(7)以外的槽所使用之溶液係可盛裝在槽內以浸漬銅表面,亦可藉由設置於槽之噴霧裝置噴霧至銅表面。在槽內盛裝溶液的情況下,於槽設置液體循環裝置為佳。藉此,可以減少溶液所導致的處理不均。 The solution used in the tanks other than the second tank (7) can be contained in the tank to immerse the copper surface, or can be sprayed onto the copper surface by a spray device installed in the tank. When the solution is contained in the tank, it is better to install a liquid circulation device in the tank. In this way, the uneven treatment caused by the solution can be reduced.
第2圖中,預想將銅箔等之銅表面加工的情況,銅箔在槽之間的運送係利用卷對卷運送系統。第3圖為滾輪(11)的擴大圖。此情況下的運送條件不特別限定,例如銅箔的線速度可為50~3000m/hr,銅箔的張力可為1~130kgf/m。此系統中,可設置如第4圖所示之擠壓滾輪(12)。藉此,可由銅箔榨取液體,減少液體被帶入下個槽。又,可設置如第5圖所示之導引滾輪(13)。藉此,可防止縱向皺褶產生或防止銅箔破裂。 In FIG. 2, it is envisioned that the copper surface of copper foil, etc. is processed, and the copper foil is transported between the slots using a roll-to-roll transport system. FIG. 3 is an enlarged view of the roller (11). The transport conditions in this case are not particularly limited. For example, the linear speed of the copper foil can be 50~3000m/hr, and the tension of the copper foil can be 1~130kgf/m. In this system, an extrusion roller (12) as shown in FIG. 4 can be provided. In this way, liquid can be squeezed from the copper foil to reduce the liquid being carried into the next slot. In addition, a guide roller (13) as shown in FIG. 5 can be provided. In this way, longitudinal wrinkles can be prevented from occurring or the copper foil can be prevented from breaking.
所處理之具有銅表面的物體在槽之間的運送不限於卷對卷運送系統,可手動進行,或以輸送帶等輸送系統來進行。另,可設置乾燥裝置以將所有步驟完成後之銅表面乾燥。乾燥溫度不特別限定,較佳於室溫~約230℃將銅表面乾燥。 The transportation of the copper-surfaced objects between the tanks is not limited to the roll-to-roll transportation system, and can be done manually or by a conveyor system such as a conveyor belt. In addition, a drying device can be provided to dry the copper surface after all steps are completed. The drying temperature is not particularly limited, and it is preferred to dry the copper surface at room temperature to about 230°C.
銅表面的加工方法:以下敘述使用上述加工裝置將銅表面加工的方法。在此,為了僅對需要加工之部分作銅表面之加工,可藉由僅將該部分浸漬於各液體,僅處理該部分。又,為了僅對銅箔等之單面進行電鍍處理,可使用習知方法(日本特開2010-236037號、特開2004-232063號)。 Copper surface processing method: The following describes a method for processing the copper surface using the above processing device. Here, in order to process only the portion that needs to be processed, only the portion can be processed by immersing only the portion in each liquid. In addition, in order to perform electroplating treatment on only one side of copper foil, etc., a known method (Japanese Patent Publication No. 2010-236037, Japanese Patent Publication No. 2004-232063) can be used.
首先,於第三槽(1),對銅表面以鹼性水溶液進行鹼處理。鹼處理的方法不特別限定,較佳可用30~50g/L之鹼性水溶液,更佳可用40g/L之鹼性水溶液,鹼性水溶液例如氫氧化鈉水溶液,於30~50℃處理0.5~2分鐘程度來處理。之後將銅表面水洗為佳。 First, in the third tank (1), the copper surface is treated with an alkaline aqueous solution. The method of alkaline treatment is not particularly limited. Preferably, a 30-50 g/L alkaline aqueous solution can be used, and a 40 g/L alkaline aqueous solution can be used. The alkaline aqueous solution, such as a sodium hydroxide aqueous solution, is treated at 30-50°C for 0.5-2 minutes. It is then preferred to wash the copper surface with water.
接著,可以於第六槽(2)對經過鹼處理之銅表面以酸進行清洗處理。例如可以藉由將銅表面浸漬於液溫20~50℃、5~20重量%之硫酸1~5分鐘來處理。之後將銅表面水洗為佳。 Next, the copper surface treated with alkaline can be cleaned with acid in the sixth tank (2). For example, the copper surface can be treated by immersing it in 5-20 wt% sulfuric acid at a liquid temperature of 20-50°C for 1-5 minutes. It is best to then wash the copper surface with water.
之後,可以於第七槽(3)對銅表面進行弱鹼處理。此弱鹼處理方法不特別限定,較佳可用0.1~10g/L之鹼性水溶液,更佳可用1~2g/L之鹼性水溶液,鹼性水溶液例如氫氧化鈉水溶液,於30~50℃處理0.5~2分鐘程度來處理。之後將銅表面水洗為佳。又,氧化銅表面之前,亦可以進行蝕刻等物理性地粗化銅表面的處理作為前處理。 Afterwards, the copper surface can be treated with weak alkali in the seventh tank (3). The weak alkali treatment method is not particularly limited. It is preferably treated with 0.1~10g/L alkaline aqueous solution, and more preferably with 1~2g/L alkaline aqueous solution, such as sodium hydroxide aqueous solution, at 30~50℃ for 0.5~2 minutes. It is better to wash the copper surface with water. In addition, before oxidizing the copper surface, etching or other treatments to physically roughen the copper surface can also be performed as a pre-treatment.
接著,於第一槽(4),使用氧化劑將一部分或全部的銅表面氧化,進行在銅表面形成氧化物之氧化處理。氧化劑不特別限定,例如可使用亞氯酸鈉、次氯酸鈉、氯酸鉀、過氯酸鉀、過硫酸鉀等水溶液。氧化劑中可添加各種添加劑(例如磷酸三鈉十二水合物這樣的磷酸鹽)或表面活性分子。表面活性分子可舉例如紫質、紫質大環、擴張紫質、縮環紫質、紫質直鏈聚合物、紫質夾心配位錯合物、紫質陣列、矽烷、四有機基-矽烷、胺基乙基-胺基丙基-三甲氧基矽烷、(3-胺基丙基)三甲氧基矽烷、(1-[3-(三甲氧基矽基)丙基]尿素)(1-[3-(Trimethoxysilyl)propyl]urea)、(3-胺基丙基)三乙氧基矽烷、(3- 環氧丙基氧丙基)三甲氧基矽烷、(3-氯丙基)三甲氧基矽烷、(3-環氧丙基氧丙基)三甲氧基矽烷、二甲基二氯矽烷、3-(三甲氧基矽基)丙基甲基丙烯酸酯、乙基三乙醯氧基矽烷、三乙氧基(異丁基)矽烷、三乙氧基(辛基)矽烷、參(2-甲氧基乙氧基)(乙烯基)矽烷、氯三甲基矽烷、甲基三氯矽烷、四氯化矽、四乙氧基矽烷、苯基三甲氧基矽烷、氯三乙氧基矽烷、乙烯基-三甲氧基矽烷、胺、糖等。又,除了氧化劑以外亦可併用醇類、酮類、羧酸等溶劑。氧化反應條件不特別限定,氧化劑的液溫較佳為40~95℃,更佳為45~80℃。反應時間較佳為0.5~30分,更佳為1~10分。 Next, in the first tank (4), an oxidizing agent is used to oxidize a part or all of the copper surface to form an oxide on the copper surface. The oxidizing agent is not particularly limited, and for example, aqueous solutions of sodium chlorite, sodium hypochlorite, potassium chlorate, potassium perchlorate, potassium persulfate, etc. can be used. Various additives (for example, phosphates such as trisodium phosphate dodecahydrate) or surfactant molecules can be added to the oxidizing agent. Examples of the surfactant molecule include porphyrin, porphyrin macrocycle, expanded porphyrin, cycloporphyrin, porphyrin linear polymer, porphyrin sandwich coordination complex, porphyrin array, silane, tetraorgano-silane, aminoethyl-aminopropyl-trimethoxysilane, (3-aminopropyl)trimethoxysilane, (1-[3-(Trimethoxysilyl)propyl]urea), (3-aminopropyl)triethoxysilane, (3- Epoxypropyloxypropyl) Trimethoxysilane, (3-chloropropyl)trimethoxysilane, (3-epoxypropyloxypropyl)trimethoxysilane, dimethyldichlorosilane, 3-(trimethoxysilyl)propyl methacrylate, ethyltriethoxysilane, triethoxy(isobutyl)silane, triethoxy(octyl)silane, tris(2-methoxyethoxy)(vinyl)silane, chlorotrimethylsilane, methyltrichlorosilane, tetrachlorosilane, tetraethoxysilane, phenyltrimethoxysilane, chlorotriethoxysilane, vinyl-trimethoxysilane, amines, sugars, etc. In addition to the oxidizing agent, a solvent such as alcohols, ketones, or carboxylic acids may be used in combination. The oxidation reaction conditions are not particularly limited, and the liquid temperature of the oxidant is preferably 40~95°C, more preferably 45~80°C. The reaction time is preferably 0.5~30 minutes, more preferably 1~10 minutes.
藉由此氧化處理,氧化物層的厚度平均為400nm以下。較佳為平均200nm以下,更佳為平均160nm以下。並且,氧化物層的厚度較佳為平均20nm以上,更佳為平均30nm以上,又較佳為平均40nm以上。此外,氧化物層的厚度為400nm以下之區域的比例不特別限定,較佳係50%以上區域為400nm以下,更佳係70%以上區域為400nm以下,又較佳係90%以上區域為400nm以下,又更佳係95%以上區域為400nm以下,進一步較佳係幾乎100%之區域為400nm以下。氧化物層的厚度之比例如可藉由連續電化學還原法(SERA)由10×10cm面積中的10個測定點來算出。 By this oxidation treatment, the thickness of the oxide layer is 400 nm or less on average. Preferably, it is 200 nm or less on average, and more preferably, it is 160 nm or less on average. Moreover, the thickness of the oxide layer is preferably 20 nm or more on average, more preferably 30 nm or more on average, and more preferably 40 nm or more on average. In addition, the proportion of the region where the thickness of the oxide layer is 400 nm or less is not particularly limited, and preferably, more than 50% of the region is 400 nm or less, more preferably, more than 70% of the region is 400 nm or less, more preferably, more than 90% of the region is 400 nm or less, more preferably, more than 95% of the region is 400 nm or less, and more preferably, almost 100% of the region is 400 nm or less. The ratio of the oxide layer thickness can be calculated, for example, by the continuous electrochemical reduction method (SERA) from 10 measurement points in an area of 10×10 cm.
氧化銅的算數平均粗度(Ra)較佳為0.02μm以上,更佳為0.04μm以上,又,較佳為0.20μm以下,更佳為0.060μm以下。氧化銅的最大高度粗度(Rz)較佳為0.2μm以上,更佳為0.4μm以上,又,較佳為1.0μm以下,更佳為0.5μm以下。在此,最大高度粗度(Rz)係表示基準長度1中,輪廓曲線(y=Z(x))的峰高Zp之最大值與谷深Zv之最大值的和。算數平均粗度(Ra)係表示基準長度1中,以下式表示之輪廓曲線(y=Z(x))中Z(x)(即峰高及谷深)之絕對值的平均值。 The arithmetic mean roughness (Ra) of copper oxide is preferably 0.02μm or more, more preferably 0.04μm or more, and more preferably 0.20μm or less, and more preferably 0.060μm or less. The maximum height roughness (Rz) of copper oxide is preferably 0.2μm or more, more preferably 0.4μm or more, and more preferably 1.0μm or less, and more preferably 0.5μm or less. Here, the maximum height roughness (Rz) is the sum of the maximum value of the peak height Zp and the maximum value of the valley depth Zv of the profile curve (y=Z(x)) in the reference length 1. The arithmetic mean roughness (Ra) is the average value of the absolute value of Z(x) (i.e., peak height and valley depth) in the profile curve (y=Z(x)) expressed by the following formula in the reference length 1.
表面粗度Ra、Rz係根據JIS B 0601:2000(基於國際標準ISO4287-1997)規定之方法算出。 Surface roughness Ra and Rz are calculated according to the method specified in JIS B 0601:2000 (based on the international standard ISO4287-1997).
接著,可以於第四槽(5)使用還原劑對被氧化之銅表面進行還原處理。還原劑可使用DMAB(二甲基氨硼烷)、乙硼烷、硼氫化鈉、聯氨等,可由習知方法使用包含還原劑、鹼性化合物(氫氧化鈉、氫氧化鉀等)及溶劑(純水等)之溶液來進行還原處理。 Next, a reducing agent can be used in the fourth tank (5) to reduce the oxidized copper surface. The reducing agent can be DMAB (dimethylammonium borane), diborane, sodium borohydride, hydrazine, etc. The reduction treatment can be performed by a known method using a solution containing a reducing agent, an alkaline compound (sodium hydroxide, potassium hydroxide, etc.) and a solvent (pure water, etc.).
然後,於第五槽(6)進行溶解處理,將氧化之銅表面以溶解劑溶解。溶解劑不特別限定,可舉例如螯合劑、生物分解性螯合劑等,具體而言,有EDTA(乙二胺四乙酸)、DHEG(二羥乙基甘胺酸)、GLDA(L-麩胺酸二乙酸四鈉)、EDDS(乙二胺-N,N’-二琥珀酸)、HIDS(3-羥基-2,2’-亞胺基二琥珀酸鈉)、MGDA(甲基甘胺酸二乙酸三鈉)、ASDA(天門冬胺酸二乙酸四鈉)、HIDA(N-2-羥基乙基亞胺基二乙酸二鈉鹽)、葡萄糖酸鈉、羥基乙叉二膦酸等。本步驟使用之溶解劑可併用醇類、酮類、羧酸等溶劑。溶解劑的pH值不特別限定,惟由於在酸性之溶解度大,處理的控制困難,容易產生處理不均,無法形成由最佳之Cu/O比產生之凸部等,故較佳為鹼性,更佳為pH9.0~14.0,又較佳為pH9.0~10.5,又更佳為pH9.8~10.2。於第五槽(6),氧化銅的溶解率為35~99%,較佳為77~99%,且較佳將銅表面溶解至氧化銅的厚度為4~150nm,較佳為8~50nm。 Then, a dissolution treatment is performed in the fifth tank (6) to dissolve the oxidized copper surface with a solvent. The solvent is not particularly limited, and examples thereof include chelating agents, biodegradable chelating agents, and the like. Specifically, there are EDTA (ethylenediaminetetraacetic acid), DHEG (dihydroxyethylglycine), GLDA (tetrasodium L-glutamine diacetate), EDDS (ethylenediamine-N,N'-disuccinic acid), HIDS (sodium 3-hydroxy-2,2'-iminodisuccinate), MGDA (trisodium methylglycine diacetate), ASDA (tetrasodium aspartic acid diacetate), HIDA (disodium N-2-hydroxyethyliminodiacetate), sodium gluconate, hydroxyethylidene diphosphonic acid, and the like. The solvent used in this step can be used in combination with alcohol, ketone, carboxylic acid and other solvents. The pH value of the solvent is not particularly limited, but due to the high solubility in acidic conditions, the treatment is difficult to control, and uneven treatment is easily produced, and the convex part produced by the optimal Cu/O ratio cannot be formed. Therefore, it is preferably alkaline, more preferably pH9.0~14.0, more preferably pH9.0~10.5, and more preferably pH9.8~10.2. In the fifth tank (6), the dissolution rate of copper oxide is 35~99%, preferably 77~99%, and the copper surface is preferably dissolved to a copper oxide thickness of 4~150nm, preferably 8~50nm.
之後,於第二槽(7),以銅以外的金屬對銅表面進行電鍍處理。電鍍處理方法可使用習知技術,銅以外的金屬例如可使用錫、銀、鋅、鋁、鈦、鉍、鉻、鐵、鈷、鎳、鈀、金、鉑或該等之合金。特別是在具有被銅覆蓋之表面的物體為銅箔的情況下,為了具有耐熱性,較佳用耐熱性比銅高 之金屬,例如鎳、鈀、金及鉑或該等之合金。又,銅箔等的情況下,可鍍敷單面或雙面。 Afterwards, in the second tank (7), the copper surface is electroplated with a metal other than copper. The electroplating method can use known techniques, and the metal other than copper can be, for example, tin, silver, zinc, aluminum, titanium, bismuth, chromium, iron, cobalt, nickel, palladium, gold, platinum or alloys thereof. In particular, when the object having a surface covered with copper is a copper foil, in order to have heat resistance, it is preferred to use a metal with higher heat resistance than copper, such as nickel, palladium, gold and platinum or alloys thereof. In addition, in the case of copper foil, etc., it can be plated on one side or both sides.
以電鍍形成之金屬層於垂直方向的平均厚度不特別限定,較佳為10nm以上,更佳為15nm以上,又較佳為20nm以上。並且,較佳為100nm以下,更佳為70nm以下,又較佳為50nm以下。或者,以電鍍形成之金屬層的金屬量,以單位面積之金屬重量表示時,較佳為15μg/cm2以上,更佳為18μg/cm2以上,又較佳為20μg/cm2以上。另,較佳為100μg/cm2以下,更佳為80μg/cm2以下,又較佳為50μg/cm2以下。金屬層於垂直方向的平均厚度係可以將形成金屬層之金屬以酸性溶液溶解,藉由ICP分析測定金屬量,將其測定量除以物體面積來算出。或者,亦可藉由將物體本身溶解,僅偵測並測定形成金屬層之金屬的量來算出。 The average thickness of the metal layer formed by electroplating in the vertical direction is not particularly limited, but is preferably 10 nm or more, more preferably 15 nm or more, and more preferably 20 nm or more. Furthermore, it is preferably 100 nm or less, more preferably 70 nm or less, and more preferably 50 nm or less. Alternatively, the metal amount of the metal layer formed by electroplating, when expressed as the metal weight per unit area, is preferably 15 μg/cm 2 or more, more preferably 18 μg/cm 2 or more, and more preferably 20 μg/cm 2 or more. In addition, it is preferably 100 μg/cm 2 or less, more preferably 80 μg/cm 2 or less, and more preferably 50 μg/cm 2 or less. The average thickness of the metal layer in the vertical direction can be calculated by dissolving the metal forming the metal layer with an acid solution, measuring the metal amount by ICP analysis, and dividing the measured amount by the area of the object. Alternatively, it can also be calculated by dissolving the object itself and detecting and measuring only the amount of metal forming the metal layer.
電鍍需要電荷以使氧化物層的一部分氧化物還原,因此,例如對銅箔鍍鎳的情況下,為了使其厚度在較佳範圍內,對於用電鍍處理之物體的單位面積,較佳給予15C/dm2以上~90C/dm2以下之電荷。又,電流密度較佳為5A/dm2以下。若電流密度過高則鍍敷會集中於凸部等,難以均一地電鍍。此外,可以改變鍍敷過程中的電流至氧化物層的一部分氧化物還原為止。又,藉由鍍敷之金屬來適當地調整至規定的厚度。鎳鍍及鎳合金鍍可舉例如純鎳、鎳銅合金、鎳鉻合金、鎳鈷合金、鎳鋅合金、鎳錳合金、鎳鉛合金、鎳磷合金。鍍敷離子的供給劑係可使用例如硫酸鎳、氨基磺酸鎳、氯化鎳、溴化鎳、氧化鋅、氯化鋅、二胺二氯鈀、硫酸鐵、氯化鐵、無水鉻酸、氯化鉻、硫酸鉻鈉、硫酸銅、焦磷酸銅、硫酸鈷、硫酸錳、次磷酸鈉等。包含pH緩衝劑或光澤劑等其他添加劑可使用例如硼酸、醋酸鎳、檸檬酸、檸檬酸鈉、檸檬酸銨、甲酸鉀、蘋果酸、蘋果酸鈉、氫氧化鈉、氫氧化鉀、碳酸鈉、氯化銨、氰化鈉、酒石酸鉀鈉、硫氰酸鉀、硫酸、鹽酸、氯化鉀、硫酸銨、氯化銨、硫酸鉀、硫 酸鈉、硫氰酸鈉、硫代硫酸鈉、溴酸鉀、焦磷酸鉀、乙二胺、硫酸鎳銨、硫代硫酸鈉、氟矽酸、氟矽酸鈉、硫酸鍶、甲酚磺酸、β-萘酚、糖精、1,3,6-萘三磺酸、萘二磺酸鈉、萘三磺酸鈉、磺胺、亞磺酸、1,4-丁炔二醇、香豆素、十二烷基硫酸鈉等。鎳鍍的建浴組成較佳可包含例如硫酸鎳(100g/L以上~350g/L以下)、氨基磺酸鎳(100g/L以上~600g/L以下)、氯化鎳(0g/L以上~300g/L以下)及該等之混合物,亦可包含檸檬酸鈉(0g/L以上~100g/L以下)或硼酸(0g/L以上~60g/L以下)作為添加劑。 Electroplating requires a charge to reduce a portion of the oxide layer. Therefore, for example, in the case of nickel plating copper foil, in order to keep the thickness within the optimal range, it is better to apply a charge of 15C/ dm2 to 90C/ dm2 per unit area of the object to be electroplated. In addition, the current density is preferably 5A/ dm2 or less. If the current density is too high, the plating will be concentrated on the protrusions, etc., making it difficult to plate uniformly. In addition, the current during the plating process can be changed until a portion of the oxide layer is reduced. In addition, the thickness can be appropriately adjusted to the specified thickness by the metal to be plated. Examples of nickel plating and nickel alloy plating include pure nickel, nickel-copper alloy, nickel-chromium alloy, nickel-cobalt alloy, nickel-zinc alloy, nickel-manganese alloy, nickel-lead alloy, and nickel-phosphorus alloy. Examples of plating ion suppliers include nickel sulfate, nickel sulfamate, nickel chloride, nickel bromide, zinc oxide, zinc chloride, diamine dichloropalladium, iron sulfate, iron chloride, anhydrous chromic acid, chromium chloride, sodium chromium sulfate, copper sulfate, copper pyrophosphate, cobalt sulfate, manganese sulfate, and sodium hypophosphite. Other additives including pH buffers or brighteners may include boric acid, nickel acetate, citric acid, sodium citrate, ammonium citrate, potassium formate, apple acid, sodium appleate, sodium hydroxide, potassium hydroxide, sodium carbonate, ammonium chloride, sodium cyanide, sodium potassium tartrate, potassium thiocyanate, sulfuric acid, hydrochloric acid, potassium chloride, ammonium sulfate, ammonium chloride, potassium sulfate, sodium sulfate. , sodium thiocyanate, sodium thiosulfate, potassium bromate, potassium pyrophosphate, ethylenediamine, nickel ammonium sulfate, sodium thiosulfate, fluorosilicic acid, sodium fluorosilicate, strontium sulfate, cresol sulfonic acid, β-naphthol, saccharin, 1,3,6-naphthalenetrisulfonic acid, sodium naphthalene disulfonate, sodium naphthalenetrisulfonate, sulfonamide, sulfinic acid, 1,4-butynediol, coumarin, sodium dodecyl sulfate, etc. The bath composition for nickel plating may preferably include, for example, nickel sulfate (100 g/L to 350 g/L), nickel sulfamate (100 g/L to 600 g/L), nickel chloride (0 g/L to 300 g/L), and mixtures thereof, and may also include sodium citrate (0 g/L to 100 g/L) or boric acid (0 g/L to 60 g/L) as an additive.
銅以外之金屬層中金屬的比例不特別限定,在深度6nm之銅對於所有金屬量的比例較佳為80重量%以下,更佳為50重量%以下,又較佳為30重量%以下。又,在不包含氧的深度中銅對於所有金屬量的比例較佳為90重量%以上,更佳為95重量%以上,又較佳為99重量%以上。又,在銅原子組成比例為40%以上之深度中的Cu/O比較佳為1以上,更佳為2以上,又較佳為5以上。在規定深度之銅對於所有金屬量的比例,可使用例如離子濺射及X射線光電子能譜法(XPS)來測定。 The ratio of metals in metal layers other than copper is not particularly limited. The ratio of copper to the total metal content at a depth of 6 nm is preferably 80% by weight or less, more preferably 50% by weight or less, and more preferably 30% by weight or less. In addition, the ratio of copper to the total metal content at a depth that does not contain oxygen is preferably 90% by weight or more, more preferably 95% by weight or more, and more preferably 99% by weight or more. In addition, the Cu/O ratio at a depth where the copper atomic composition ratio is 40% or more is preferably 1 or more, more preferably 2 or more, and more preferably 5 or more. The ratio of copper to the total metal content at a specified depth can be measured using, for example, ion sputtering and X-ray photoelectron spectroscopy (XPS).
金屬層較佳為不具粒子的均勻層。在此,均勻意為在95%以上之面,較佳在98%以上之面,更佳在99%以上之面,其層厚度不超過層平均厚度的5倍,較佳不超過3倍,更佳不超過2倍。藉由形成不具粒子的均勻層,可以提升熱處理後的密著性。另,在上述步驟後,可以進行使用矽烷耦合劑等之耦合處理或使用苯并三唑類等之防鏽處理。 The metal layer is preferably a uniform layer without particles. Here, uniform means that the layer thickness does not exceed 5 times, preferably 3 times, and more preferably 2 times the average layer thickness on more than 95% of the surface, preferably more than 98% of the surface, and more preferably more than 99% of the surface. By forming a uniform layer without particles, the adhesion after heat treatment can be improved. In addition, after the above steps, coupling treatment using silane coupling agent or rust-proofing treatment using benzotriazole or the like can be performed.
為了藉由上述一連串步驟得到適合氧化物使用目的之氧化物的層,較佳進行前導實驗來設定溫度、時間等條件。 In order to obtain an oxide layer suitable for the purpose of oxide use through the above series of steps, it is better to conduct a preliminary experiment to set the temperature, time and other conditions.
物體及其表面形狀:需加工之具有銅表面的物體可為由銅形成之物體,亦可為在由銅以外之物形成的物體表面設有銅層者,施以銅鍍者亦可,此物體的形狀不特別限定,例如可為箔狀、粒子狀、粉狀,亦可以是以銅 為主成分之電解銅箔、壓延銅箔等銅箔、銅粒子、銅粉、銅線、銅板、銅製導線架。 Object and its surface shape: The object with copper surface to be processed may be an object formed of copper, or an object formed of an object other than copper with a copper layer on its surface, or an object plated with copper. The shape of the object is not particularly limited, for example, it may be foil, particle, powder, or copper foil such as electrolytic copper foil and rolled copper foil with copper as the main component, copper particles, copper powder, copper wire, copper plate, copper wire frame.
藉由以上述加工裝置加工此銅表面,在至少一部分金屬層的表面形成凸部。此凸部的平均高度較佳為10nm以上,更佳為50nm以上,又較佳為100nm以上,且較佳為1000nm以下,更佳為500nm以下,又較佳為200nm以下。此凸部的高度為例如將用聚焦離子束(FIB)製作之複合銅箔的截面以掃描式電子顯微鏡(SEM)觀察的影像中,將隔著凸部相鄰之凹部的極小點連接之線的中點,與相鄰凹部之間存在之凸部的極大點的距離。 By processing the copper surface with the above-mentioned processing device, a convex portion is formed on the surface of at least a portion of the metal layer. The average height of the convex portion is preferably greater than 10nm, more preferably greater than 50nm, and more preferably greater than 100nm, and preferably less than 1000nm, more preferably less than 500nm, and more preferably less than 200nm. The height of the convex portion is, for example, the distance between the midpoint of the line connecting the minimum points of the concave portions adjacent to the convex portion in the image observed by a scanning electron microscope (SEM) of the cross section of the composite copper foil made by a focused ion beam (FIB) and the maximum point of the convex portion between the adjacent concave portions.
在物體表面,每3.8μm中高度為50nm以上之凸部,較佳為平均15個以上,更佳為30個以上,又較佳為50個以上。另,較佳為100個以下,更佳為80個以下,又較佳為60個以下。凸部的數量為例如將用聚焦離子束(FIB)製作之複合銅箔的截面以掃描式電子顯微鏡(SEM)觀察的影像中,藉由測定每3.8μm中高度為50nm以上之凸部的數量來計算。 On the surface of the object, the number of protrusions with a height of 50nm or more per 3.8μm is preferably an average of 15 or more, more preferably 30 or more, and more preferably 50 or more. In addition, it is preferably 100 or less, more preferably 80 or less, and more preferably 60 or less. The number of protrusions is calculated by measuring the number of protrusions with a height of 50nm or more per 3.8μm in an image observed by a scanning electron microscope (SEM) of a cross section of a composite copper foil made by a focused ion beam (FIB).
金屬層的算數平均粗度(Ra)較佳為0.02μm以上,更佳為0.04μm以上,又,較佳為0.20μm以下,更佳為0.060μm以下。金屬層的最大高度粗度(Rz)較佳為0.2μm以上,更佳為0.4μm以上,又,較佳為1.4μm以下,更佳為0.5μm以下。 The arithmetic mean roughness (Ra) of the metal layer is preferably 0.02μm or more, more preferably 0.04μm or more, and more preferably 0.20μm or less, and more preferably 0.060μm or less. The maximum height roughness (Rz) of the metal layer is preferably 0.2μm or more, more preferably 0.4μm or more, and more preferably 1.4μm or less, and more preferably 0.5μm or less.
又,氧化處理後之Ra與鍍金屬處理後之Ra的比值(氧化處理後之Ra/鍍金屬處理後之Ra)較佳為0.7以上~1.3以下,氧化處理後之Rz與鍍金屬處理後之Rz的比值(氧化處理後之Rz/鍍金屬處理後之Rz)較佳為0.8以上~1.2以下。此比值越接近1則表示電鍍形成之金屬層的厚度越均一。 In addition, the ratio of Ra after oxidation treatment to Ra after metallization treatment (Ra after oxidation treatment/Ra after metallization treatment) is preferably 0.7 or more and 1.3 or less, and the ratio of Rz after oxidation treatment to Rz after metallization treatment (Rz after oxidation treatment/Rz after metallization treatment) is preferably 0.8 or more and 1.2 or less. The closer this ratio is to 1, the more uniform the thickness of the metal layer formed by electroplating is.
具有被粗化處理之銅表面的物體的利用方法:使用本發明之加工裝置粗化處理後之具有銅表面的物體,可用於印刷佈線板所使用之銅箔、 於基板配線之銅線、LIB負極集電體用之銅箔等。例如,將印刷佈線板所使用之銅箔的表面以本發明之加工裝置粗化處理,與樹脂黏著成層狀,藉此製作積層板以用於製造印刷佈線板。此情況下的樹脂種類不特別限定,較佳為聚苯醚、環氧樹脂、PPO、PBO、PTFE、LCP或TPPI。又例如,將LIB負極集電體用之銅箔以本發明之加工裝置粗化處理,藉此可提升銅箔與負極材料之密著性,可得到容量劣化少之良好的鋰離子電池。鋰離子電池用之負極集電體可依照習知方法來製造。例如,調製含有碳系活性物質之負極材料,使其分散於溶劑或水形成活性物質漿料。將此活性物質漿料塗佈於銅箔後,使溶劑或水蒸發而乾燥。之後壓製,再度乾燥後將負極集電體成形為所需形狀。此外,負極材料亦可包含理論容量比碳系活性物質大之矽或矽化合物、鍺、錫或鉛等。又,電解質係除了將鋰鹽溶解於有機溶劑之有機電解液以外,亦可使用由聚乙二醇或聚偏二氟乙烯等形成之聚合物。經過本發明之加工裝置加工表面的銅箔,除了用於鋰離子電池以外,亦可適用於鋰離子聚合物電池。 Method for utilizing an object having a roughened copper surface: An object having a copper surface roughened by the processing device of the present invention can be used as copper foil used in printed wiring boards, copper wires for substrate wiring, copper foil for LIB negative electrode collectors, etc. For example, the surface of the copper foil used in the printed wiring board is roughened by the processing device of the present invention, and is adhered to a resin in a layered state to produce a laminate for use in the manufacture of printed wiring boards. The type of resin in this case is not particularly limited, and preferably polyphenylene ether, epoxy resin, PPO, PBO, PTFE, LCP or TPPI. For another example, the copper foil used for the negative electrode collector of LIB is roughened by the processing device of the present invention, thereby improving the adhesion between the copper foil and the negative electrode material, and obtaining a good lithium ion battery with less capacity degradation. The negative electrode collector for lithium ion battery can be manufactured according to known methods. For example, a negative electrode material containing a carbon-based active material is prepared and dispersed in a solvent or water to form an active material slurry. After applying this active material slurry on the copper foil, the solvent or water is evaporated and dried. After that, it is pressed, and after drying again, the negative electrode collector is formed into the desired shape. In addition, the negative electrode material may also include silicon or silicon compounds, germanium, tin or lead, etc., which have a theoretical capacity greater than that of carbon-based active materials. In addition, the electrolyte may be an organic electrolyte solution in which lithium salt is dissolved in an organic solvent, or a polymer formed by polyethylene glycol or polyvinylidene fluoride, etc. The copper foil whose surface is processed by the processing device of the present invention may be used for lithium-ion batteries as well as lithium-ion polymer batteries.
(實施例)<1.製造具有被粗化處理之銅表面的物體>:實施例1~9及比較例1~4使用DR-WS(古河電工股份有限公司製,厚度18μm)銅箔。又,實施例及比較例中,分別以相同條件製作數個測試片。 (Example) <1. Manufacturing an object with a roughened copper surface>: Examples 1 to 9 and Comparative Examples 1 to 4 use DR-WS (manufactured by Furukawa Electric Co., Ltd., thickness 18μm) copper foil. In addition, in the examples and comparative examples, several test pieces were made under the same conditions.
(1)前處理:〔鹼脫脂處理〕將銅箔浸漬於液溫50℃、40g/L之氫氧化鈉水溶液中1分鐘後,進行水洗。 (1) Pretreatment: [Alkaline degreasing treatment] Immerse the copper foil in a 40g/L sodium hydroxide aqueous solution at 50°C for 1 minute, then rinse with water.
〔酸洗處理〕將經過鹼脫脂處理之銅箔浸漬於液溫25℃、10重量%之硫酸水溶液中2分鐘後,進行水洗。 [Acid pickling] The copper foil that has undergone alkaline degreasing treatment is immersed in a 10 wt% sulfuric acid aqueous solution at a temperature of 25°C for 2 minutes, and then washed with water.
〔預浸處理〕將經過酸洗處理之銅箔浸漬於液溫40℃、氫氧化鈉1.2g/L之預浸用藥液中1分鐘。 [Pre-immersion treatment] Immerse the pickled copper foil in a pre-immersion solution with a temperature of 40°C and 1.2g/L sodium hydroxide for 1 minute.
(2)氧化處理:將經過鹼處理之銅箔根據第1表記載之條件,使用氧化處理用水溶液進行氧化處理。上述處理後水洗銅箔。評價方法係於 之後的<2.氧化處理後之試料的評價>敘述。 (2) Oxidation treatment: The copper foil treated with alkali is oxidized using an aqueous solution for oxidation treatment according to the conditions listed in Table 1. After the above treatment, the copper foil is washed with water. The evaluation method is described in <2. Evaluation of samples after oxidation treatment> later.
(3)電鍍處理:對經過氧化處理之銅箔,根據第1表記載之條件進行電鍍處理。比較例2及比較例3即使進行電鍍3分鐘後仍無鎳析出。 (3) Electroplating treatment: The copper foil that has been oxidized is electroplated according to the conditions listed in Table 1. Even after electroplating for 3 minutes, no nickel is precipitated in Comparative Examples 2 and 3.
(4)耦合處理:對經過電鍍處理之銅箔,根據第1表記載之條件進行耦合處理。 (4) Coupling treatment: The copper foil that has been electroplated is subjected to coupling treatment according to the conditions listed in Table 1.
<2.氧化處理後之試料的評價>:(1)氧化銅厚度之測定:使用QC-100(ECI製),用以下的電解液藉由連續電化學還原法(SERA)測定銅箔表面之氧化銅的厚度。 <2. Evaluation of samples after oxidation treatment>: (1) Determination of copper oxide thickness: Use QC-100 (manufactured by ECI) to measure the thickness of copper oxide on the surface of copper foil by continuous electrochemical reduction method (SERA) with the following electrolyte.
電解液(pH=8.4) Electrolyte (pH=8.4)
硼酸6.18g/L;四硼酸鈉9.55g/L Boric acid 6.18g/L; sodium tetraborate 9.55g/L
具體而言,使用口徑0.32cm之墊片,於90μA/cm2之電流密度使用上述電解液時,判斷電位由-0.85V以上至-0.6V為止為氧化銅(CuO)的波峰。 Specifically, when a pad with a diameter of 0.32 cm is used and the above electrolyte is used at a current density of 90 μA/cm 2 , the potential from above -0.85 V to -0.6 V is determined to be the peak of copper oxide (CuO).
(2)算出Ra及Rz:將氧化處理後之銅箔使用共軛焦掃描式電子顯微鏡OPTELICS H1200(Lasertec股份有限公司製)測定銅箔的表面形狀,根據JIS B 0601:2001規定之方法算出Ra及Rz。測定條件:掃描寬度為100μm、掃描類型為Area、光源為藍光、Cut-off值為1/5。接物鏡x100、目鏡x14、數位變焦x1、Z間距設為10nm,取得3個位置之資料,計算其平均值作為各實施例及各比較例之Ra及Rz。實施例6及比較例1~3無法算出,故表上記載為N.D.。 (2) Calculation of Ra and Rz: The surface shape of the copper foil after oxidation treatment was measured using a conjugate scanning electron microscope OPTELICS H1200 (manufactured by Lasertec Co., Ltd.), and Ra and Rz were calculated according to the method specified in JIS B 0601:2001. Measurement conditions: scanning width is 100μm, scanning type is Area, light source is blue light, and cut-off value is 1/5. Objective lens x100, eyepiece x14, digital zoom x1, Z distance is set to 10nm, data from 3 positions are obtained, and the average value is calculated as Ra and Rz for each example and each comparative example. Example 6 and Comparative Examples 1~3 cannot be calculated, so they are recorded as N.D. in the table.
<3.電鍍及耦合處理後的試料之評價>(1)算出鎳量:鎳之垂直方向的平均厚度的測定方法,例如將銅構件溶解於12%硝酸,將所得之液使用ICP發射光譜裝置5100 SVDV ICP-OES(Agilent Technologies公司製)測定金屬成分的濃度,藉由考慮金屬密度、金屬層的表面積來算出層狀之金屬層的厚度。 <3. Evaluation of samples after electroplating and coupling treatment> (1) Calculation of nickel content: The average thickness of nickel in the vertical direction is measured by, for example, dissolving a copper component in 12% nitric acid and using the resulting solution to measure the concentration of metal components using an ICP emission spectrometer 5100 SVDV ICP-OES (manufactured by Agilent Technologies). The thickness of the layered metal layer is calculated by considering the metal density and the surface area of the metal layer.
(2)算出Ra及Rz:將電鍍及耦合處理後之銅箔使用共軛焦掃描式電子顯微鏡OPTELICS H1200(Lasertec股份有限公司製)測定銅箔的表面形狀,根據JIS B 0601:2001規定之方法算出Ra及Rz。測定條件:掃描寬度為100μm、掃描類型為Area、光源為藍光、Cut-off值為1/5。接物鏡x100、目鏡x14、數位變焦x1、Z間距設為10nm,取得3個位置之資料,Ra及Rz為3個位置之平均值。 (2) Calculation of Ra and Rz: The surface shape of the copper foil after electroplating and coupling treatment was measured using a conjugate scanning electron microscope OPTELICS H1200 (manufactured by Lasertec Co., Ltd.), and Ra and Rz were calculated according to the method specified in JIS B 0601:2001. Measurement conditions: scanning width is 100μm, scanning type is Area, light source is blue light, and cut-off value is 1/5. Objective lens x100, eyepiece x14, digital zoom x1, Z distance is set to 10nm, and data from 3 positions are obtained. Ra and Rz are the average values of the 3 positions.
(3)積層體的熱處理前後之剝離強度測定:對於電鍍及耦合處理後之銅箔,製作積層體並測定熱處理前後之剝離強度。又,測定剝離強度時以目視確認剝離面,確認鍍敷層有無剝離。首先,對於各銅箔,將包含PPE作為樹脂之MEGTRON6(Panasonic公司製)於真空中以加壓壓力2.9MPa、溫度210℃、加壓時間120分鐘之條件進行加熱壓製以積層,各得到兩個測定試料。對於各一個測定試料,為了得知其對熱之耐性,係進行耐熱處理(177℃、10日)。之後,對於各個經過熱處理之試料及未經過熱處理之試料,進行90。剝離測試(日本工業規格(JIS)C5016),求出剝離強度(kgf/cm)。耐熱劣化率係將所測定之耐熱測試前後的剝離強度差除以耐熱測試前的剝離強度所得到比例而算出。上述使用MEGTRON6作為預浸體,但使用MEGTRON4等其他市售預浸體亦幾乎不會發生銅箔造成的劣化,可得到同樣的熱處理前後之密著性。 (3) Determination of the peeling strength of the laminate before and after heat treatment: For the copper foil after electroplating and coupling treatment, a laminate was made and the peeling strength before and after heat treatment was measured. In addition, when measuring the peeling strength, the peeling surface was visually confirmed to confirm whether the coating layer was peeled. First, for each copper foil, MEGTRON6 (manufactured by Panasonic) containing PPE as a resin was heat-pressed in a vacuum at a pressure of 2.9 MPa, a temperature of 210°C, and a pressing time of 120 minutes to obtain two test samples. For each test sample, in order to know its heat resistance, a heat treatment (177°C, 10 days) was performed. Afterwards, a 90 peel test (Japanese Industrial Standard (JIS) C5016) was performed on each heat-treated sample and the non-heat-treated sample to obtain the peel strength (kgf/cm). The heat-resistant degradation rate is calculated by dividing the measured peel strength difference before and after the heat-resistant test by the peel strength before the heat-resistant test. MEGTRON6 is used as the prepreg above, but using other commercially available prepregs such as MEGTRON4 will hardly cause degradation caused by copper foil, and the same adhesion before and after heat treatment can be obtained.
(4)算出銅箔的熱處理前後之顏色變化:電鍍及耦合處理後之銅箔的耐熱性亦以顏色變化來評價。具體而言,於225℃之烘箱進行熱處理30分鐘,由ΔE*ab評價前後的顏色變化。測定熱處理前之銅箔的色差(L*、a*、b*)後,放入225℃之烘箱30分鐘,測定熱處理後之銅箔的色差,根據下式算出ΔE*ab。 (4) Calculate the color change of the copper foil before and after heat treatment: The heat resistance of the copper foil after electroplating and coupling treatment is also evaluated by color change. Specifically, the color change before and after heat treatment is evaluated by ΔE*ab after heat treatment in an oven at 225°C for 30 minutes. After measuring the color difference (L*, a*, b*) of the copper foil before heat treatment, put it in an oven at 225°C for 30 minutes, measure the color difference of the copper foil after heat treatment, and calculate ΔE*ab according to the following formula.
ΔE*ab=[(ΔL*)2+(Δa*)2+(Δb*)2]1/2 ΔE*ab=[(ΔL * ) 2 +(Δa * ) 2 +(Δb * ) 2 ] 1/2
第1表
像這樣,氧化銅的厚度在502nm以上的情況下無法電鍍(比較例2、比較例3)。又,即使是可電鍍之氧化銅的厚度,當氧化銅的厚度比400nm厚時,無法得到鍍敷層與金屬構件之密著性而發生剝離(比較例1)。相較於此,氧化銅的厚度為400nm以下之實施例1~9中,有得到鍍敷層與金屬構件之密著性,且與樹脂之密著性及耐熱性優異。此外,電流密度大於5A/dm2的情況下,耐熱性低(比較例4),相較於此,電流密度小於5A/dm2之實施例1~9中與樹脂之密著性及耐熱性優異。 Thus, when the copper oxide thickness is 502 nm or more, electroplating is impossible (Comparative Example 2, Comparative Example 3). Moreover, even when the copper oxide thickness is electroplatable, when the copper oxide thickness is thicker than 400 nm, the adhesion between the coating layer and the metal component cannot be obtained and peeling occurs (Comparative Example 1). In contrast, in Examples 1 to 9 in which the copper oxide thickness is 400 nm or less, adhesion between the coating layer and the metal component is obtained, and adhesion to the resin and heat resistance are excellent. In addition, when the current density is greater than 5A/ dm2 , the heat resistance is low (Comparative Example 4). In contrast, Examples 1 to 9 in which the current density is less than 5A/ dm2 have excellent adhesion to the resin and heat resistance.
產業利用性:根據本發明,可提供新穎的銅表面之加工裝置。 Industrial applicability: According to the present invention, a novel copper surface processing device can be provided.
1:第三槽 1: Third slot
11:滾輪 11: Scroll wheel
2:第六槽 2: Sixth slot
3:第七槽 3: The seventh slot
4:第一槽 4: First slot
5:第四槽 5: Fourth slot
6:第五槽 6: Fifth slot
7:第二槽 7: Second slot
8:陽極及電源 8: Anode and power supply
100:加工裝置 100: Processing equipment
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US4661417A (en) | 1983-12-29 | 1987-04-28 | Hitachi, Ltd. | Composite of metal and resin having electrolytically reduced metal layer and process for producing the same |
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US4661417A (en) | 1983-12-29 | 1987-04-28 | Hitachi, Ltd. | Composite of metal and resin having electrolytically reduced metal layer and process for producing the same |
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