TWI818164B - Composite copper member, manufacturing method of composite copper member, laminated body, electronic component - Google Patents
Composite copper member, manufacturing method of composite copper member, laminated body, electronic component Download PDFInfo
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- TWI818164B TWI818164B TW109109833A TW109109833A TWI818164B TW I818164 B TWI818164 B TW I818164B TW 109109833 A TW109109833 A TW 109109833A TW 109109833 A TW109109833 A TW 109109833A TW I818164 B TWI818164 B TW I818164B
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- Prior art keywords
- copper
- composite copper
- composite
- less
- metal layer
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 162
- 239000010949 copper Substances 0.000 title claims abstract description 125
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 124
- 239000002131 composite material Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 65
- 239000002184 metal Substances 0.000 claims abstract description 65
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000005751 Copper oxide Substances 0.000 claims abstract description 15
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 15
- 238000007747 plating Methods 0.000 claims description 43
- 238000011282 treatment Methods 0.000 claims description 36
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 30
- 238000007254 oxidation reaction Methods 0.000 claims description 21
- 230000003647 oxidation Effects 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 9
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000011135 tin Substances 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 230000000052 comparative effect Effects 0.000 description 37
- 239000011889 copper foil Substances 0.000 description 37
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 27
- 238000005259 measurement Methods 0.000 description 17
- 239000002253 acid Substances 0.000 description 13
- 238000012360 testing method Methods 0.000 description 13
- 239000007788 liquid Substances 0.000 description 9
- 235000011121 sodium hydroxide Nutrition 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 8
- 239000003638 chemical reducing agent Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 102000004330 Rhodopsin Human genes 0.000 description 7
- 108090000820 Rhodopsin Proteins 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- NCYCYZXNIZJOKI-IOUUIBBYSA-N 11-cis-retinal Chemical compound O=C/C=C(\C)/C=C\C=C(/C)\C=C\C1=C(C)CCCC1(C)C NCYCYZXNIZJOKI-IOUUIBBYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000003513 alkali Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000002845 discoloration Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229910001416 lithium ion Inorganic materials 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- -1 rhodopsin macrocycle Chemical class 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000007773 negative electrode material Substances 0.000 description 3
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 3
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 3
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000002388 carbon-based active material Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 229940112669 cuprous oxide Drugs 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000011167 hydrochloric acid Nutrition 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 2
- 235000011118 potassium hydroxide Nutrition 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 2
- 235000019345 sodium thiosulphate Nutrition 0.000 description 2
- UBXAKNTVXQMEAG-UHFFFAOYSA-L strontium sulfate Chemical compound [Sr+2].[O-]S([O-])(=O)=O UBXAKNTVXQMEAG-UHFFFAOYSA-L 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- NUANKVDTEBIXHW-UHFFFAOYSA-N trimethoxy-(3-methyl-2-propoxyoxiran-2-yl)silane Chemical compound CCCOC1([Si](OC)(OC)OC)OC1C NUANKVDTEBIXHW-UHFFFAOYSA-N 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- VCVKIIDXVWEWSZ-YFKPBYRVSA-N (2s)-2-[bis(carboxymethyl)amino]pentanedioic acid Chemical compound OC(=O)CC[C@@H](C(O)=O)N(CC(O)=O)CC(O)=O VCVKIIDXVWEWSZ-YFKPBYRVSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- RAIPHJJURHTUIC-UHFFFAOYSA-N 1,3-thiazol-2-amine Chemical compound NC1=NC=CS1 RAIPHJJURHTUIC-UHFFFAOYSA-N 0.000 description 1
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 description 1
- VKZRWSNIWNFCIQ-UHFFFAOYSA-N 2-[2-(1,2-dicarboxyethylamino)ethylamino]butanedioic acid Chemical compound OC(=O)CC(C(O)=O)NCCNC(C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-UHFFFAOYSA-N 0.000 description 1
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- HSUCIOYNLFGEHU-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane silane Chemical compound [SiH4].ClCCC[Si](OC)(OC)OC HSUCIOYNLFGEHU-UHFFFAOYSA-N 0.000 description 1
- BZOVBIIWPDQIHF-UHFFFAOYSA-N 3-hydroxy-2-methylbenzenesulfonic acid Chemical compound CC1=C(O)C=CC=C1S(O)(=O)=O BZOVBIIWPDQIHF-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 description 1
- 101100207331 Arabidopsis thaliana TPPI gene Proteins 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- NVEYHJNJWCDNIJ-UHFFFAOYSA-N CO[Si](CCCNC(=O)N)(OC)OC.CO[Si](CCCNC(=O)N)(OC)OC Chemical compound CO[Si](CCCNC(=O)N)(OC)OC.CO[Si](CCCNC(=O)N)(OC)OC NVEYHJNJWCDNIJ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021555 Chromium Chloride Inorganic materials 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- ZTVCAEHRNBOTLI-UHFFFAOYSA-L Glycine, N-(carboxymethyl)-N-(2-hydroxyethyl)-, disodium salt Chemical compound [Na+].[Na+].OCCN(CC([O-])=O)CC([O-])=O ZTVCAEHRNBOTLI-UHFFFAOYSA-L 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004153 Potassium bromate Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- DDOUZWOTRDSPDI-FHNDMYTFSA-L [Na+].C(=O)(O)CN([C@@H](CC(=O)[O-])C(=O)[O-])CC(=O)O.[Na+] Chemical compound [Na+].C(=O)(O)CN([C@@H](CC(=O)[O-])C(=O)[O-])CC(=O)O.[Na+] DDOUZWOTRDSPDI-FHNDMYTFSA-L 0.000 description 1
- MLDWGLQSBBCMMO-UHFFFAOYSA-N [Na].[Na].[Na].CNCC(=O)O Chemical compound [Na].[Na].[Na].CNCC(=O)O MLDWGLQSBBCMMO-UHFFFAOYSA-N 0.000 description 1
- LUVOJBWJNHWVNG-UHFFFAOYSA-N [Na].[Na].[Na].OC(=O)CC(O)(C(O)=O)CC(O)=O Chemical compound [Na].[Na].[Na].OC(=O)CC(O)(C(O)=O)CC(O)=O LUVOJBWJNHWVNG-UHFFFAOYSA-N 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229950003476 aminothiazole Drugs 0.000 description 1
- DAPUDVOJPZKTSI-UHFFFAOYSA-L ammonium nickel sulfate Chemical compound [NH4+].[NH4+].[Ni+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DAPUDVOJPZKTSI-UHFFFAOYSA-L 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- DLDJFQGPPSQZKI-UHFFFAOYSA-N but-2-yne-1,4-diol Chemical compound OCC#CCO DLDJFQGPPSQZKI-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- JEZFASCUIZYYEV-UHFFFAOYSA-N chloro(triethoxy)silane Chemical compound CCO[Si](Cl)(OCC)OCC JEZFASCUIZYYEV-UHFFFAOYSA-N 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000012787 coverlay film Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- WPUMTJGUQUYPIV-JIZZDEOASA-L disodium (S)-malate Chemical compound [Na+].[Na+].[O-]C(=O)[C@@H](O)CC([O-])=O WPUMTJGUQUYPIV-JIZZDEOASA-L 0.000 description 1
- PTEWEFISOFMTTD-UHFFFAOYSA-L disodium;naphthalene-1,2-disulfonate Chemical compound [Na+].[Na+].C1=CC=CC2=C(S([O-])(=O)=O)C(S(=O)(=O)[O-])=CC=C21 PTEWEFISOFMTTD-UHFFFAOYSA-L 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- FALCQDAWENTNHF-UHFFFAOYSA-N ethenyl(2-methoxyethoxy)silane Chemical compound COCCO[SiH2]C=C FALCQDAWENTNHF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 description 1
- 229910000360 iron(III) sulfate Inorganic materials 0.000 description 1
- HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- ZAUUZASCMSWKGX-UHFFFAOYSA-N manganese nickel Chemical compound [Mn].[Ni] ZAUUZASCMSWKGX-UHFFFAOYSA-N 0.000 description 1
- 229940099596 manganese sulfate Drugs 0.000 description 1
- 239000011702 manganese sulphate Substances 0.000 description 1
- 235000007079 manganese sulphate Nutrition 0.000 description 1
- SQQMAOCOWKFBNP-UHFFFAOYSA-L manganese(II) sulfate Chemical compound [Mn+2].[O-]S([O-])(=O)=O SQQMAOCOWKFBNP-UHFFFAOYSA-L 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
- UQPSGBZICXWIAG-UHFFFAOYSA-L nickel(2+);dibromide;trihydrate Chemical compound O.O.O.Br[Ni]Br UQPSGBZICXWIAG-UHFFFAOYSA-L 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 239000005486 organic electrolyte Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 229920003253 poly(benzobisoxazole) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 229940094037 potassium bromate Drugs 0.000 description 1
- 235000019396 potassium bromate Nutrition 0.000 description 1
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical compound [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- WFIZEGIEIOHZCP-UHFFFAOYSA-M potassium formate Chemical compound [K+].[O-]C=O WFIZEGIEIOHZCP-UHFFFAOYSA-M 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- 229940074439 potassium sodium tartrate Drugs 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- ZNNZYHKDIALBAK-UHFFFAOYSA-M potassium thiocyanate Chemical compound [K+].[S-]C#N ZNNZYHKDIALBAK-UHFFFAOYSA-M 0.000 description 1
- 229940116357 potassium thiocyanate Drugs 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- ZFAYZXMSTVMBLX-UHFFFAOYSA-J silicon(4+);tetrachloride Chemical compound [Si+4].[Cl-].[Cl-].[Cl-].[Cl-] ZFAYZXMSTVMBLX-UHFFFAOYSA-J 0.000 description 1
- 235000019265 sodium DL-malate Nutrition 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 1
- 229960002218 sodium chlorite Drugs 0.000 description 1
- 239000000176 sodium gluconate Substances 0.000 description 1
- 235000012207 sodium gluconate Nutrition 0.000 description 1
- 229940005574 sodium gluconate Drugs 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 239000001394 sodium malate Substances 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- VGTPCRGMBIAPIM-UHFFFAOYSA-M sodium thiocyanate Chemical compound [Na+].[S-]C#N VGTPCRGMBIAPIM-UHFFFAOYSA-M 0.000 description 1
- MILMJAFFMWCPLL-UHFFFAOYSA-J sodium;chromium(3+);disulfate Chemical compound [Na+].[Cr+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O MILMJAFFMWCPLL-UHFFFAOYSA-J 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- BUUPQKDIAURBJP-UHFFFAOYSA-N sulfinic acid Chemical compound OS=O BUUPQKDIAURBJP-UHFFFAOYSA-N 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- DTXLBRAVKYTGFE-UHFFFAOYSA-J tetrasodium;2-(1,2-dicarboxylatoethylamino)-3-hydroxybutanedioate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)C(O)C(C([O-])=O)NC(C([O-])=O)CC([O-])=O DTXLBRAVKYTGFE-UHFFFAOYSA-J 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004324 time-proportional phase incrementation Methods 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- ALVYUZIFSCKIFP-UHFFFAOYSA-N triethoxy(2-methylpropyl)silane Chemical compound CCO[Si](CC(C)C)(OCC)OCC ALVYUZIFSCKIFP-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- RHZZVWTVJHZKAH-UHFFFAOYSA-K trisodium;naphthalene-1,2,3-trisulfonate Chemical compound [Na+].[Na+].[Na+].C1=CC=C2C(S([O-])(=O)=O)=C(S([O-])(=O)=O)C(S(=O)(=O)[O-])=CC2=C1 RHZZVWTVJHZKAH-UHFFFAOYSA-K 0.000 description 1
- ASTWEMOBIXQPPV-UHFFFAOYSA-K trisodium;phosphate;dodecahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.O.O.[Na+].[Na+].[Na+].[O-]P([O-])([O-])=O ASTWEMOBIXQPPV-UHFFFAOYSA-K 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Electroplating Methods And Accessories (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Non-Insulated Conductors (AREA)
Abstract
本發明之目的係提供一種新穎的複合銅構件。複合銅構件係於銅構件的至少一部分之表面的以銅及銅氧化物形成之微細凹凸上形成有由銅以外之金屬構成的金屬層,形成有該金屬層之該複合銅構件的表面具有微細凹凸,該複合銅構件的該表面之粗度曲線參數的平均長度(Rsm)為550nm以下,表面積率為1.3以上且2.2以下,該金屬層於垂直方向的平均厚度為15nm以上且150nm以下。 The purpose of the present invention is to provide a novel composite copper component. A composite copper member has a metal layer made of a metal other than copper formed on the fine unevenness made of copper and copper oxide on at least a part of the surface of the copper member. The surface of the composite copper member on which the metal layer is formed has fine unevenness. As for the unevenness, the average length (Rsm) of the roughness curve parameters of the surface of the composite copper component is 550nm or less, the surface area ratio is 1.3 or more and 2.2 or less, and the average thickness of the metal layer in the vertical direction is 15nm or more and 150nm or less.
Description
本發明係關於複合銅構件。 The present invention relates to composite copper components.
用於印刷佈線板之銅箔需要與樹脂之密著性。為了提升此密著性,已有藉由蝕刻等將銅箔表面粗化,即藉由所謂的錨定效應(anchor effect)以提升機械性黏著力的方法。然而,由印刷佈線板之高密度化或在高頻帶之傳輸損失的觀點而言,銅箔表面亦需要平坦化。為了滿足上述相反的要求,已開發出進行氧化步驟及還原步驟等之銅表面處理方法(參照專利文獻1)。根據該方法,係將銅箔前處理,浸漬於含有氧化劑之藥水,藉此使銅箔表面氧化形成氧化銅之凹凸後,浸漬於含有還原劑之藥水以使氧化銅還原,藉此調整表面的凹凸。此外,另開發有在氧化步驟中添加界面活性分子的方法作為利用氧化及/或還原之銅箔處理的密著性改善方法(參照專利文獻2)、在還原步驟後使用胺基噻唑系化合物等在銅箔表面形成保護皮膜的方法(參照專利文獻3)。如此之氧化銅的凹凸的各凸狀部之間的距離比可見光的波長範圍(例如750nm~380nm)短,入射至粗化處理層的可見光在微細凹凸構造內漫射,結果會衰減。因此,粗化處理層係作為吸收光之吸光層來發揮功用,該粗化處理面的表面與粗化處理前相比其顏色會黑化、褐色化等暗色化。故,銅箔之粗化處理面的色調亦有特色,已知L*a*b*表色系統的明度L*值為25以下(專利文獻4)。 Copper foil used for printed wiring boards requires good adhesion to resin. In order to improve this adhesion, the surface of the copper foil has been roughened by etching, which is a method of improving mechanical adhesion through the so-called anchor effect. However, from the viewpoint of high density of printed wiring boards or transmission loss in high frequency bands, the copper foil surface also needs to be planarized. In order to satisfy the above-mentioned opposite requirements, a copper surface treatment method that performs an oxidation step, a reduction step, etc. has been developed (see Patent Document 1). According to this method, the copper foil is pre-treated and immersed in a solution containing an oxidizing agent to oxidize the surface of the copper foil to form unevenness of copper oxide, and then immersed in a solution containing a reducing agent to reduce the copper oxide, thereby adjusting the surface texture. Bump. In addition, a method of adding interface active molecules in the oxidation step has been developed as a method for improving the adhesion of copper foil treatment by oxidation and/or reduction (see Patent Document 2), and the use of aminothiazole-based compounds after the reduction step, etc. A method of forming a protective film on the surface of copper foil (see Patent Document 3). In this way, the distance between the convex portions of the uneven copper oxide is shorter than the wavelength range of visible light (for example, 750 nm to 380 nm), and the visible light incident on the roughened layer is diffused within the fine uneven structure, resulting in attenuation. Therefore, the roughened layer functions as a light-absorbing layer that absorbs light, and the surface of the roughened surface becomes darker in color such as blackening or browning than before the roughening treatment. Therefore, the color tone of the roughened surface of the copper foil is also distinctive, and it is known that the lightness L * value of the L * a * b * color system is 25 or less (Patent Document 4).
另一方面,亦有對銅箔之粗化處理表面的凹凸施加鍍敷以提升機械性黏著力的方法,惟其鍍敷膜僅係為了防止上述凹凸因整平作用(leveling)而平滑化、微細的凹凸形狀被填平,故具有分散分布的金屬粒子(專利文獻5)。 On the other hand, there is also a method of plating the unevenness on the roughened surface of the copper foil to improve the mechanical adhesion. However, the plating film is only used to prevent the unevenness from becoming smooth and fine due to leveling. The uneven shape is filled up, so it has dispersed metal particles (Patent Document 5).
專利文獻1為國際公開WO2014/126193號公報;專利文獻2為日本特表2013-534054號公報;專利文獻3為日本特開平8-97559號公報;專利文獻4為日本特開2017-48467號公報;專利文獻5為日本特開2000-151096號公報。 Patent document 1 is International Publication No. WO2014/126193; Patent document 2 is Japanese Patent Application Publication No. 2013-534054; Patent document 3 is Japanese Patent Application Publication No. 8-97559; Patent document 4 is Japanese Patent Application Publication No. 2017-48467 ; Patent Document 5 is Japanese Patent Application Laid-Open No. 2000-151096.
本發明之目的係提供一種新穎的複合銅構件。 The purpose of the present invention is to provide a novel composite copper component.
本發明人等致力研究的結果,成功製作新穎的複合銅構件,以銅及銅氧化物形成之微細凹凸上具有均一厚度且不分散的金屬層,並且抑制其表面的整平作用。本發明具有以下的實施態樣: As a result of intensive research, the present inventors have successfully produced a novel composite copper component, which has a uniform thickness and non-dispersed metal layer on the fine unevenness formed by copper and copper oxide, and suppresses the smoothing effect on the surface. The present invention has the following implementation aspects:
〔1〕一種複合銅構件,係於銅構件的至少一部分之表面的以銅及銅氧化物形成之微細凹凸上形成有由銅以外之金屬構成的金屬層,形成有該金屬層之該複合銅構件的表面具有微細凹凸,該複合銅構件的該表面之粗度曲線參數的平均長度(Rsm)為550nm以下,表面積率為1.3以上且2.2以下,該金屬層於垂直方向的平均厚度為15nm以上且150nm以下。 [1] A composite copper member in which a metal layer made of a metal other than copper is formed on the fine unevenness made of copper and copper oxide on at least a part of the surface of the copper member, and the metal layer is formed on the composite copper member. The surface of the component has fine unevenness. The average length (Rsm) of the thickness curve parameter of the surface of the composite copper component is 550nm or less, the surface area ratio is 1.3 or more and 2.2 or less, and the average thickness of the metal layer in the vertical direction is 15nm or more. And below 150nm.
〔2〕如〔1〕之複合銅構件,其中,該複合銅構件的該表面之明度L*值未滿35。 [2] The composite copper member according to [1], wherein the lightness L * value of the surface of the composite copper member is less than 35.
〔3〕如〔1〕或〔2〕之複合銅構件,其中,該金屬層包含選自由錫、銀、鋅、鋁、鈦、鉍、鉻、鐵、鈷、鎳、鈀、金及鉑組成之群組中至少一種之金屬。 [3] The composite copper component of [1] or [2], wherein the metal layer is selected from the group consisting of tin, silver, zinc, aluminum, titanium, bismuth, chromium, iron, cobalt, nickel, palladium, gold and platinum. At least one metal in the group.
〔4〕如〔1〕至〔3〕中任一項之複合銅構件,其中,該複合銅構件的該 表面之微細凹凸中,Rz為0.25μm以上1.2μm以下。 [4] The composite copper member according to any one of [1] to [3], wherein the composite copper member Among the fine unevenness on the surface, Rz is 0.25 μm or more and 1.2 μm or less.
〔5〕一種複合銅構件的製造方法,係製造〔1〕記載之複合銅構件的方法,包含第一步驟及第二步驟,該第一步驟係藉由氧化處理,在銅構件表面形成微細凹凸部,該第二步驟係在該銅構件表面的微細凹凸部上,使用銅以外之金屬進行鍍敷處理,以使該金屬層於垂直方向的平均厚度為15nm以上且150nm以下,形成有該金屬層之該複合銅構件的表面具有微細凹凸,該複合銅構件的該表面之粗度曲線參數的平均長度Rsm為550nm以下,表面積率為1.3以上且2.2以下。 [5] A method of manufacturing a composite copper member, which is a method of manufacturing the composite copper member described in [1], including a first step and a second step. The first step is to form fine unevenness on the surface of the copper member through oxidation treatment. part, the second step is to perform a plating process using a metal other than copper on the fine uneven parts on the surface of the copper component, so that the average thickness of the metal layer in the vertical direction is 15 nm or more and 150 nm or less, and the metal layer is formed The surface of the composite copper member of the layer has fine unevenness, the average length Rsm of the roughness curve parameter of the surface of the composite copper member is 550 nm or less, and the surface area ratio is 1.3 or more and 2.2 or less.
〔6〕如〔5〕之複合銅構件的製造方法,該第二步驟中,該鍍敷處理為電鍍處理。 [6] The manufacturing method of the composite copper component according to [5], in the second step, the plating treatment is electroplating treatment.
〔7〕一種積層體,係使用如〔1〕至〔4〕中任一項之複合銅構件所製作。 [7] A laminated body produced using the composite copper member according to any one of [1] to [4].
〔8〕一種電子零件,係使用如〔1〕至〔4〕中任一項之複合銅構件所製作。 [8] An electronic component made of the composite copper component according to any one of [1] to [4].
〔第1圖〕實施例及比較例中,粗度曲線參數的平均長度(Rsm)與剝離強度(常態)之關係圖。 [Figure 1] A graph showing the relationship between the average length of the thickness curve parameter (Rsm) and the peel strength (normal) in Examples and Comparative Examples.
〔第2圖〕實施例及比較例中,表面積率與剝離強度(常態)之關係圖。 [Figure 2] A graph showing the relationship between surface area ratio and peel strength (normal) in Examples and Comparative Examples.
〔第3圖〕實施例及比較例中,L*a*b*表色系統之明度L*與剝離強度(常態)之關係圖。 [Figure 3] In Examples and Comparative Examples, L * a * b * represents the relationship between the lightness L * of the color system and the peel strength (normal).
〔第4圖〕實施例及比較例中,鍍敷層於垂直方向之平均厚度(鍍敷厚度)與△E*ab之關係圖。 [Figure 4] The relationship between the average thickness of the plating layer in the vertical direction (plating thickness) and ΔE*ab in Examples and Comparative Examples.
〔第5圖〕實施例及比較例中,鍍敷層於垂直方向之平均厚度(鍍敷厚度) 與剝離強度(常態)之關係圖。 [Figure 5] Average thickness of the plating layer in the vertical direction (plating thickness) in Examples and Comparative Examples Relationship diagram with peel strength (normal).
〔第6圖〕實施例2及比較例1測定傳輸損失的結果。 [Figure 6] Results of measurement of transmission loss in Example 2 and Comparative Example 1.
以下使用附加圖式詳細地說明本發明的較佳實施形態,但不限定於此。又,根據本說明書的記載,發明所屬技術領域中具有通常知識者係明瞭本發明的目的、特徵、優點及其構思,發明所屬技術領域中具有通常知識者可容易地根據本說明書的記載重現本發明。以下記載之發明的實施形態及具體實施例等,係表示本發明的較佳實施態樣,用於例示及說明,不用以限定本發明。發明所屬技術領域中具有通常知識者係明瞭,在本說明書所揭示之本發明的意圖及範圍內,可基於本說明書的記載進行各種修飾。 Preferred embodiments of the present invention will be described in detail below using additional drawings, but are not limited thereto. Furthermore, from the description of this specification, a person with ordinary knowledge in the technical field to which the invention belongs will understand the purpose, characteristics, advantages and concepts of the present invention, and a person with ordinary knowledge in the technical field to which the invention belongs can easily reproduce it based on the description of this specification. invention. The embodiments and specific examples of the invention described below represent preferred embodiments of the invention and are used for illustration and explanation and are not intended to limit the invention. It will be apparent to those with ordinary skill in the technical field to which the invention belongs that various modifications can be made based on the description of this specification within the intention and scope of the invention disclosed in this specification.
複合銅構件:本發明之一實施態樣為複合銅構件,係於銅構件的至少一部分之表面,以銅及銅氧化物形成之微細凹凸上形成有由銅以外之金屬構成的金屬層。銅構件為構造的一部分,係包含銅作為主成分之材料,包含電解銅箔、壓延銅箔、附載體銅箔等銅箔、銅線、銅板、銅製導線架等,但不限定於此。 Composite copper member: One embodiment of the present invention is a composite copper member, in which a metal layer composed of a metal other than copper is formed on the fine unevenness formed of copper and copper oxide on at least part of the surface of the copper member. The copper member is a part of the structure and is a material containing copper as a main component, including, but not limited to, copper foil such as electrolytic copper foil, rolled copper foil, and carrier-attached copper foil, copper wire, copper plate, copper lead frame, and the like.
銅構件為銅箔的情況下,銅箔的厚度不特別限定,較佳為0.1μm以上且100μm以下,更佳為0.5μm以上且50μm以下。 When the copper member is copper foil, the thickness of the copper foil is not particularly limited, but is preferably 0.1 μm or more and 100 μm or less, more preferably 0.5 μm or more and 50 μm or less.
本發明之一實施態樣的複合銅構件,形成有由銅以外之金屬構成的金屬層之表面的粗度曲線參數的平均長度(RSm)為550nm以下,較佳為450nm以下,更佳為350nm以下。在此,RSm表示一個基準長度(lr)之粗度曲線所包含的一個週期量的凹凸產生的長度(即輪廓曲線參數的長度:Xs1~Xsm)之平均,用下述式子算出。 In the composite copper member according to one embodiment of the present invention, the average length (RSm) of the roughness curve parameter of the surface formed with the metal layer made of metal other than copper is 550 nm or less, preferably 450 nm or less, and more preferably 350 nm. the following. Here, RSm represents the average length of one cycle of unevenness (i.e., the length of the profile curve parameter:
在此,算數平均粗度(Ra)的10%作為凹凸的最小高度,基準長度(lr)的1%作為最小長度以定義一個週期量的凹凸。舉例如,Rsm可根據「利用原子力顯微鏡之精密陶瓷薄膜的表面粗度測定方法(JIS R 1683:2007)」來測定並算出。 Here, 10% of the arithmetic mean roughness (Ra) is used as the minimum height of the unevenness, and 1% of the reference length (lr) is used as the minimum length to define one periodic amount of unevenness. For example, Rsm can be measured and calculated based on "Measurement of Surface Roughness of Precision Ceramic Thin Films Using Atomic Force Microscope (JIS R 1683:2007)".
本發明之一實施態樣的複合銅構件的表面積率為1.3以上,較佳為1.4以上,更佳為1.5以上,並且為2.2以下,較佳為2.1以下,更佳為2.0以下。在此,表面積率係規定範圍中,表面積相對於面積之比率。例如,若表面積率為1,則為無表面粗度的完全平面狀態,表面積率越大則表面的凹凸越劇烈。又,規定範圍之面積係相當於該範圍的表面若為平坦時的該範圍之表面積。表面積率可例如用以下方法算出。將形成有由銅以外之金屬構成的金屬層的複合銅構件之表面,以原子力顯微鏡(AFM:Atomic Force Microscope)觀察,得到AFM的形狀影像。對於隨機選出之10處重複進行此觀察,以AFM求出表面積S1、S2、…、S10。接著,該等表面積S1、S2、…、S10與其各自之觀察區域的面積之比(表面積/面積)SR1、SR2、…、SR10單純地作算數平均,可求得複合銅構件之表面的平均表面積率。 The surface area ratio of the composite copper member according to one embodiment of the present invention is 1.3 or more, preferably 1.4 or more, more preferably 1.5 or more, and 2.2 or less, preferably 2.1 or less, and more preferably 2.0 or less. Here, the surface area ratio is the ratio of the surface area to the area within a predetermined range. For example, if the surface area ratio is 1, it is a completely flat state with no surface roughness. The larger the surface area ratio, the more severe the unevenness of the surface. In addition, the area of a prescribed range corresponds to the surface area of the range if the surface of the range is flat. The surface area ratio can be calculated, for example, by the following method. The surface of the composite copper member on which the metal layer made of metal other than copper is formed is observed with an atomic force microscope (AFM), and an AFM shape image is obtained. This observation was repeated for 10 randomly selected locations, and the surface areas S1, S2,..., S10 were calculated using AFM. Then, the average surface area of the surface of the composite copper member can be obtained by simply taking the arithmetic average of the ratio (surface area/area) SR1, SR2, ..., SR10 of the surface areas S1, S2, ..., S10 and the area of their respective observation areas. Rate.
本發明之一實施態樣的複合銅構件中,形成有由銅以外之金屬構成的金屬層之表面的明度L*為35以下(或未滿),較佳為30以下(或未滿),更佳為25以下(或未滿)。在此,明度L*為L*a*b*表色系統中作為測量表面粗度的一個指標,可以測定對測定樣品表面照射光時的光反射量來算出。例如,L*=0表示黑色、L*=100表示白色的擴散色。具體的計算方法可依照JIS Z8105(1982)。測定形成有金屬層之複合銅構件的表面的明度時,表面之凹凸部的空隙(即Rsm)狹窄時,光的反射量減少,故明度值有降低的傾 向;凹凸部的空隙較寬時,光的反射量增加,故明度值有升高的傾向。 In the composite copper member according to one embodiment of the present invention, the lightness L * of the surface on which the metal layer made of metal other than copper is formed is 35 or less (or less), preferably 30 or less (or less). It is better to be below 25 (or less). Here, the lightness L * is an index for measuring surface roughness in the L * a * b * colorimetric system, and can be calculated by measuring the amount of light reflection when the surface of the measurement sample is irradiated with light. For example, L * =0 represents black, and L * =100 represents white diffuse color. The specific calculation method can be based on JIS Z8105 (1982). When measuring the brightness of the surface of a composite copper component with a metal layer formed on it, when the gaps (i.e. Rsm) in the uneven parts of the surface are narrow, the amount of light reflection is reduced, so the brightness value tends to decrease; when the gaps in the uneven parts are wide, The amount of light reflected increases, so the brightness value tends to increase.
本發明之一實施態樣為複合銅構件,形成有由銅以外之金屬構成的金屬層之表面的Rz為1.00μm以下,較佳為0.90μm以下,更佳為0.80μm以下,且為0.10μm以上,較佳為0.15μm以上,更佳為0.20μm以上。在此,最大高度粗度(Rz)係表示基準長度l中,輪廓曲線(y=Z(x))的峰高Zp之最大值與谷深Zv之最大值的和。表面粗度Rz可根據JIS B 0601:2001(基於國際標準ISO13565-1)規定之方法算出。 One embodiment of the present invention is a composite copper member. The Rz of the surface on which the metal layer made of metal other than copper is formed is 1.00 μm or less, preferably 0.90 μm or less, more preferably 0.80 μm or less, and 0.10 μm. Above, preferably 0.15 μm or more, more preferably 0.20 μm or more. Here, the maximum height roughness (Rz) represents the sum of the maximum value of the peak height Zp and the maximum value of the valley depth Zv of the contour curve (y=Z(x)) in the reference length l. Surface roughness Rz can be calculated according to the method specified in JIS B 0601:2001 (based on international standard ISO13565-1).
金屬層所包含之金屬的種類,只要是銅以外者則不特別限定,較佳為選自由錫、銀、鋅、鋁、鈦、鉍、鉻、鐵、鈷、鎳、鈀、金及鉑組成之群組中至少一種之金屬。特別是為了使其具有耐酸性及耐熱性,較佳用耐酸性及耐熱性比銅高之金屬,例如鎳、鈀、金及鉑或該等之合金。 The type of metal contained in the metal layer is not particularly limited as long as it is other than copper. It is preferably selected from the group consisting of tin, silver, zinc, aluminum, titanium, bismuth, chromium, iron, cobalt, nickel, palladium, gold and platinum. At least one metal in the group. In particular, in order to make it have acid resistance and heat resistance, it is preferable to use a metal with higher acid resistance and heat resistance than copper, such as nickel, palladium, gold, platinum or alloys thereof.
複合銅構件中,金屬層所包含之銅以外的金屬於垂直方向的平均厚度不特別限定,較佳為15nm以上,更佳為20nm以上,又較佳為25nm以上。惟,若太厚則因整平作用導致複合銅構件之表面的微細凹凸平滑化,剝離強度亦降低,故較佳為150nm以下,更佳為100nm以下或75nm以下。又,金屬層所包含之銅以外的金屬於垂直方向的平均厚度係可以將形屬層以酸性溶液溶解,藉由ICP分析測定金屬量,除以複合銅構件之面積來算出。或者,亦可藉由複合銅構件本身溶解,僅偵測並測定形成金屬層之金屬的量來算出。 In the composite copper member, the average thickness of the metal other than copper contained in the metal layer in the vertical direction is not particularly limited, but is preferably 15 nm or more, more preferably 20 nm or more, and still more preferably 25 nm or more. However, if it is too thick, the fine unevenness on the surface of the composite copper member will be smoothed by the leveling effect, and the peel strength will also decrease. Therefore, the thickness is preferably 150 nm or less, more preferably 100 nm or less or 75 nm or less. In addition, the average thickness in the vertical direction of metals other than copper contained in the metal layer can be calculated by dissolving the metal layer in an acidic solution, measuring the amount of metal by ICP analysis, and dividing by the area of the composite copper member. Alternatively, it can also be calculated by dissolving the composite copper member itself and detecting and measuring only the amount of metal forming the metal layer.
由銅以外之金屬構成的金屬層可藉由鍍敷形成於銅構件的表面。鍍敷方法不特別限定,可藉由電鍍、無電解鍍、真空蒸鍍、化成處理等來進行鍍敷,較佳為形成均一薄的鍍敷層,故較佳為電鍍。此後,包含真空蒸鍍、化成處理之披覆處理稱為鍍敷。對經過氧化處理之銅構件表面進行電鍍的情況下,首先表面的氧化銅(CuO)被還原,形成氧化亞銅(Cu2O)或純 銅時需要使用電荷,故至形成鍍敷為止會產生時間差。例如,對銅構件施加鎳鍍的情況下,為了使其厚度在上述較佳範圍內,對於進行電鍍處理之銅構件的單位面積,較佳施加15C/dm2以上~75C/dm2以下之電荷,更佳施加25C/dm2以上~65C/dm2以下之電荷。 A metal layer made of metal other than copper can be formed on the surface of the copper component by plating. The plating method is not particularly limited, and plating can be performed by electroplating, electroless plating, vacuum evaporation, chemical conversion treatment, etc. Electroplating is preferred because a uniform and thin plating layer is preferably formed. From now on, the coating process including vacuum evaporation and chemical conversion treatment is called plating. When electroplating is performed on the surface of an oxidized copper component, the copper oxide (CuO) on the surface is first reduced, and an electric charge is required to form cuprous oxide (Cu 2 O) or pure copper, so there is a time lag until plating is formed. . For example, when nickel plating is applied to a copper member, in order to keep the thickness within the above-mentioned preferred range, it is preferable to apply a charge of 15C/dm 2 or more to 75C/dm 2 or less per unit area of the copper member to be electroplated. , it is better to apply a charge of more than 25C/dm 2 to less than 65C/dm 2 .
複合銅構件的製造方法:本發明之一實施態樣為複合銅構件的製造方法,包含第一步驟及第二步驟,該第一步驟係藉由氧化處理在銅構件表面形成微細凹凸,該第二步驟係在形成有微細凹凸之銅構件表面進行鍍敷處理。 Manufacturing method of composite copper components: One embodiment of the present invention is a manufacturing method of composite copper components, including a first step and a second step. The first step is to form fine unevenness on the surface of the copper component through oxidation treatment. The second step is to form fine unevenness on the surface of the copper component through oxidation treatment. The second step is to perform plating treatment on the surface of the copper component with fine unevenness.
首先,第一步驟中,將銅構件表面以氧化劑氧化,形成銅氧化物之層,且在表面形成微細凹凸。銅氧化物包含氧化銅及氧化亞銅。此氧化步驟之前不需要蝕刻等粗化處理步驟,但亦可進行。又,氧化處理前可進行脫脂清洗、藉由去除自然氧化膜以使表面均一化之酸清洗、或在酸清洗後進行鹼處理以防止酸被帶入氧化步驟。鹼處理的方法不特別限定,較佳可用0.1~10g/L之鹼性水溶液,更佳可用1~2g/L之鹼性水溶液,鹼性水溶液例如氫氧化鈉水溶液,於30~50℃處理0.5~2分鐘程度即可。 First, in the first step, the surface of the copper component is oxidized with an oxidizing agent to form a layer of copper oxide, and fine unevenness is formed on the surface. Copper oxide includes copper oxide and cuprous oxide. This oxidation step does not need to be preceded by a roughening step such as etching, but may be performed. In addition, degreasing cleaning can be performed before the oxidation treatment, acid cleaning can be performed to make the surface uniform by removing the natural oxide film, or alkali treatment can be performed after the acid cleaning to prevent the acid from being brought into the oxidation step. The method of alkali treatment is not particularly limited. It is better to use an alkaline aqueous solution of 0.1~10g/L, and more preferably an alkaline aqueous solution of 1~2g/L. The alkaline aqueous solution, such as sodium hydroxide aqueous solution, is treated at 30~50°C for 0.5 ~2 minutes is enough.
氧化劑不特別限定,例如可使用亞氯酸鈉、次氯酸鈉、氯酸鉀、過氯酸鉀、過硫酸鉀等水溶液。氧化劑中可添加各種添加劑(例如磷酸三鈉十二水合物這樣的磷酸鹽)或表面活性分子。表面活性分子可舉例如紫質、紫質大環、擴張紫質、縮環紫質、紫質直鏈聚合物、紫質夾心配位錯合物、紫質陣列、矽烷、四有機基-矽烷、胺基乙基-胺基丙基-三甲氧基矽烷、(3-胺基丙基)三甲氧基矽烷、(1-[3-(三甲氧基矽基)丙基]尿素)(1-[3-(Trimethoxysilyl)propyl]urea)、(3-胺基丙基)三乙氧基矽烷、(3-環氧丙基氧丙基)三甲氧基矽烷、(3-氯丙基)三甲氧基矽烷、(3-環氧丙基氧丙基)三甲氧基矽烷、二甲基二氯矽烷、3-(三甲氧基矽基)丙基甲基丙烯酸酯、乙基三乙醯氧基矽烷、三乙氧 基(異丁基)矽烷、三乙氧基(辛基)矽烷、參(2-甲氧基乙氧基)(乙烯基)矽烷、氯三甲基矽烷、甲基三氯矽烷、四氯化矽、四乙氧基矽烷、苯基三甲氧基矽烷、氯三乙氧基矽烷、乙烯基-三甲氧基矽烷、胺、糖等。 The oxidizing agent is not particularly limited, and for example, aqueous solutions such as sodium chlorite, sodium hypochlorite, potassium chlorate, potassium perchlorate, and potassium persulfate can be used. Various additives (for example, phosphates such as trisodium phosphate dodecahydrate) or surface-active molecules can be added to the oxidizing agent. Examples of surface-active molecules include rhodopsin, rhodopsin macrocycle, expanded rhodopsin, cyclic rhodopsin, linear rhodopsin polymers, rhodopsin sandwich coordination complexes, rhodopsin arrays, silane, and tetraorgano-silane. , Aminoethyl-aminopropyl-trimethoxysilane, (3-aminopropyl)trimethoxysilane, (1-[3-(trimethoxysilyl)propyl]urea) (1- [3-(Trimethoxysilyl)propyl]urea), (3-aminopropyl)triethoxysilane, (3-epoxypropyloxypropyl)trimethoxysilane, (3-chloropropyl)trimethoxysilane Silane, (3-epoxypropyloxypropyl)trimethoxysilane, dimethyldichlorosilane, 3-(trimethoxysilyl)propylmethacrylate, ethyltriethyloxysilane , triethoxy (isobutyl)silane, triethoxy (octyl)silane, 2-methoxyethoxy (vinyl)silane, chlorotrimethylsilane, methyltrichlorosilane, tetrachloride Silicon, tetraethoxysilane, phenyltrimethoxysilane, chlorotriethoxysilane, vinyl-trimethoxysilane, amine, sugar, etc.
氧化反應條件不特別限定,氧化用藥液的液溫較佳為40~95℃,更佳為45~80℃。反應時間較佳為0.5~30分,更佳為1~10分。 The oxidation reaction conditions are not particularly limited. The liquid temperature of the oxidation chemical liquid is preferably 40 to 95°C, and more preferably 45 to 80°C. The reaction time is preferably 0.5 to 30 minutes, more preferably 1 to 10 minutes.
第一步驟中,可用溶解劑將經氧化後之銅構件表面溶解,以調整銅構件表面的凹凸。 In the first step, a dissolving agent can be used to dissolve the surface of the oxidized copper component to adjust the unevenness of the surface of the copper component.
於本步驟使用之溶解劑不特別限定,較佳為螯合劑,特別是生物分解性螯合劑等,可舉例如乙二胺四乙酸、二羥乙基甘胺酸、L-麩胺酸二乙酸四鈉、乙二胺-N,N’-二琥珀酸、3-羥基-2,2’-亞胺基二琥珀酸鈉、甲基甘胺酸二乙酸三鈉、天門冬胺酸二乙酸四鈉、N-(2-羥基乙基)亞胺基二乙酸二鈉、葡萄糖酸鈉等。 The dissolving agent used in this step is not particularly limited, but is preferably a chelating agent, especially a biodegradable chelating agent. Examples include ethylenediaminetetraacetic acid, dihydroxyethylglycine, and L-glutamic acid diacetic acid. Tetrasodium, ethylenediamine-N,N'-disuccinic acid, sodium 3-hydroxy-2,2'-iminodisuccinate, trisodium methylglycine diacetate, tetrasodium aspartic acid diacetate Sodium, disodium N-(2-hydroxyethyl)iminodiacetate, sodium gluconate, etc.
溶解用藥液的pH值不特別限定,較佳為鹼性,更佳為pH8.0~10.5,又較佳為pH9.0~10.5,又更佳為pH9.8~10.2。 The pH value of the dissolving medicinal solution is not particularly limited, but it is preferably alkaline, more preferably pH 8.0 to 10.5, further preferably pH 9.0 to 10.5, further preferably pH 9.8 to 10.2.
又,第一步驟中,可使用含有還原劑之藥液(還原用藥液)將經氧化後之銅構件所形成的銅氧化物還原,以調整凹凸的數量或長度。 Moreover, in the first step, a chemical solution containing a reducing agent (reducing chemical solution) can be used to reduce the copper oxide formed by the oxidized copper component to adjust the number or length of the concavities and convexities.
還原劑可使用DMAB(二甲基胺硼烷)、乙硼烷、硼氫化鈉、聯氨等。又,還原用藥液為包含還原劑、鹼性化合物(氫氧化鈉、氫氧化鉀等)及溶劑(純水等)之液體。 As the reducing agent, DMAB (dimethylamine borane), diborane, sodium borohydride, hydrazine, etc. can be used. Moreover, the chemical liquid for reduction is a liquid containing a reducing agent, an alkaline compound (sodium hydroxide, potassium hydroxide, etc.), and a solvent (pure water, etc.).
接著,第二步驟中,對形成有微細凸部之銅構件表面用銅以外之金屬進行鍍敷處理,以製造複合銅構件。鍍敷處理方法可用習知技術,例如,銅以外之金屬可使用錫、銀、鋅、鋁、鈦、鉍、鉻、鐵、鈷、鎳、鈀、金、鉑或各種合金。鍍敷步驟亦不特別限定,可藉由電鍍、無電解鍍、真空蒸鍍、化成處理等來進行鍍敷。本發明之一實施態樣中,較佳為形成均一薄的鍍敷 層,故鍍敷較佳為電鍍。以往藉由銅鍍在銅構件的銅表面形成隆起狀的凹凸,進一步鍍敷處理成層狀以賦予耐熱性及耐藥品性,但在本發明中,係對包含經氧化處理形成之銅氧化物並具有均一且微細凹凸之銅構件的表面進行鍍敷處理。 Next, in the second step, the surface of the copper member on which the fine protrusions are formed is plated with a metal other than copper to produce a composite copper member. Conventional techniques may be used for the plating treatment. For example, for metals other than copper, tin, silver, zinc, aluminum, titanium, bismuth, chromium, iron, cobalt, nickel, palladium, gold, platinum or various alloys may be used. The plating step is not particularly limited, and plating can be performed by electroplating, electroless plating, vacuum evaporation, chemical conversion treatment, or the like. In one embodiment of the present invention, it is preferred to form a uniformly thin plating layer, so plating is preferably electroplating. In the past, copper plating was used to form ridge-like irregularities on the copper surface of copper components, and the plating process was further layered to provide heat resistance and chemical resistance. However, in the present invention, copper oxides formed by oxidation treatment are used. And the surface of the copper component with uniform and fine unevenness is plated.
電鍍的情況下,較佳為鎳鍍及鎳合金鍍等。鎳鍍及鎳合金鍍可舉例如純鎳、鎳銅合金、鎳鉻合金、鎳鈷合金、鎳鋅合金、鎳錳合金、鎳鉛合金、鎳磷合金等。鍍敷離子的供給劑係可使用例如硫酸鎳、氨基磺酸鎳、氯化鎳、溴化鎳、氧化鋅、氯化鋅、二胺二氯鈀、硫酸鐵、氯化鐵、無水鉻酸、氯化鉻、硫酸鉻鈉、硫酸銅、焦磷酸銅、硫酸鈷、硫酸錳、次磷酸鈉等。包含pH緩衝劑或光澤劑等之其他添加劑可使用例如硼酸、醋酸鎳、檸檬酸、檸檬酸鈉、檸檬酸銨、甲酸鉀、蘋果酸、蘋果酸鈉、氫氧化鈉、氫氧化鉀、碳酸鈉、氯化銨、氰化鈉、酒石酸鉀鈉、硫氰酸鉀、硫酸、鹽酸、氯化鉀、硫酸銨、氯化銨、硫酸鉀、硫酸鈉、硫氰酸鈉、硫代硫酸鈉、溴酸鉀、焦磷酸鉀、乙二胺、硫酸鎳銨、硫代硫酸鈉、氟矽酸、氟矽酸鈉、硫酸鍶、甲酚磺酸、β-萘酚、糖精、1,3,6-萘三磺酸、萘二磺酸鈉、萘三磺酸鈉、磺胺、亞磺酸、1,4-丁炔二醇、香豆素、十二烷基硫酸鈉等。鎳鍍的建浴組成較佳可包含例如硫酸鎳(100g/L以上~350g/L以下)、氨基磺酸鎳(100g/L以上~600g/L以下)、氯化鎳(0g/L以上~300g/L以下)及該等之混合物,亦可包含檸檬酸鈉(0g/L以上~100g/L以下)或硼酸(0g/L以上~60g/L以下)作為添加劑。 In the case of electroplating, nickel plating, nickel alloy plating, etc. are preferred. Examples of nickel plating and nickel alloy plating include pure nickel, nickel-copper alloy, nickel-chromium alloy, nickel-cobalt alloy, nickel-zinc alloy, nickel-manganese alloy, nickel-lead alloy, nickel-phosphorus alloy, and the like. Examples of the supplying agent for plating ions include nickel sulfate, nickel sulfamate, nickel chloride, nickel bromide, zinc oxide, zinc chloride, palladium diamine dichloride, ferric sulfate, ferric chloride, anhydrous chromic acid, Chromium chloride, sodium chromium sulfate, copper sulfate, copper pyrophosphate, cobalt sulfate, manganese sulfate, sodium hypophosphite, etc. Other additives including pH buffers or gloss agents may be used, such as boric acid, nickel acetate, citric acid, sodium citrate, ammonium citrate, potassium formate, malic acid, sodium malate, sodium hydroxide, potassium hydroxide, and sodium carbonate. , ammonium chloride, sodium cyanide, potassium sodium tartrate, potassium thiocyanate, sulfuric acid, hydrochloric acid, potassium chloride, ammonium sulfate, ammonium chloride, potassium sulfate, sodium sulfate, sodium thiocyanate, sodium thiosulfate, potassium bromate , potassium pyrophosphate, ethylenediamine, nickel ammonium sulfate, sodium thiosulfate, fluorosilicic acid, sodium fluorosilicate, strontium sulfate, cresolsulfonic acid, β-naphthol, saccharin, 1,3,6-naphthalene trisulfate Sulfonic acid, sodium naphthalene disulfonate, sodium naphthalene trisulfonate, sulfonamide, sulfinic acid, 1,4-butynediol, coumarin, sodium lauryl sulfate, etc. The preferred bath composition for nickel plating can include, for example, nickel sulfate (above 100g/L~350g/L), nickel sulfamate (above 100g/L~600g/L), nickel chloride (above 0g/L~ 300g/L or less) and mixtures thereof may also contain sodium citrate (0g/L or more to 100g/L or less) or boric acid (0g/L or more to 60g/L or less) as additives.
無電解鎳鍍的情況下,較佳使用觸媒來進行處理。觸媒可使用鐵、鈷、鎳、釕、銠、鈀、鋨、銥及該等之鹽。藉由使用觸媒進行處理,可得到均一且無粒子分散於各處的金屬層。藉此提升複合銅箔的耐熱性。在無電解電鍍鎳的情況下所使用之還原劑,較佳為使用銅及氧化銅不具有觸媒活性之還原劑。銅及氧化銅不具有觸媒活性之還原劑可舉例如次磷酸鈉等次磷酸 鹽。 In the case of electroless nickel plating, it is better to use a catalyst for processing. Catalysts can use iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium and their salts. By using a catalyst for treatment, a uniform metal layer without particles dispersed everywhere can be obtained. This improves the heat resistance of the composite copper foil. The reducing agent used in the case of electroless nickel plating is preferably a reducing agent that does not have catalytic activity of copper and copper oxide. Examples of reducing agents that do not have catalytic activity in copper and copper oxide include hypophosphorous acid such as sodium hypophosphite. salt.
像這樣,藉由對銅構件進行第一步驟及第二步驟,可製造複合銅構件,係於銅構件的至少一部分之表面形成有由銅以外之金屬構成的金屬層,形成有由銅以外之金屬構成的金屬層的複合銅構件表面具有微細凹凸,Rsm為550nm以下,表面積率為1.3以上~2.2以下,金屬層於垂直方向的平均厚度為15nm以上~150nm以下。 In this way, by performing the first step and the second step on the copper member, a composite copper member can be produced. A metal layer made of a metal other than copper is formed on at least a part of the surface of the copper member, and a metal layer made of a metal other than copper is formed. The surface of the composite copper component of the metal layer composed of metal has fine unevenness, Rsm is 550nm or less, the surface area ratio is 1.3 or more and 2.2 or less, and the average thickness of the metal layer in the vertical direction is 15nm or more and 150nm or less.
在不損害本發明之技術特徵的前提下,對於以該等步驟製造之複合銅構件,可以進行使用矽烷耦合劑等之耦合處理或使用苯并三唑類等之防鏽處理。 Without impairing the technical characteristics of the present invention, the composite copper component manufactured through these steps can be coupled with a silane coupling agent or the like or rust-proofed with benzotriazole.
複合銅構件的利用方法:本發明之複合銅構件可用於印刷佈線板所使用之銅箔、於基板配線之銅線、LIB負極集電體用之銅箔等電子零件。例如,將本發明之複合銅箔與樹脂黏著成層狀,藉此製作積層板以用於製造印刷佈線板。此情況下的樹脂種類不特別限定,較佳為聚苯醚、環氧樹脂、PPO、PBO、PTFE、LCP或TPPI。又,藉由將本發明之複合銅箔用於LIB負極集電體,可提升銅箔與負極材料之密著性,可得到容量劣化少之良好的鋰離子電池。鋰離子電池用之負極集電體可依照習知方法來製造。例如,調製含有碳系活性物質之負極材料,使其分散於溶劑或水形成活性物質漿料。將此活性物質漿料塗佈於本發明之複合銅箔後,使溶劑或水蒸發而乾燥。之後壓製,再度乾燥後將負極集電體成形為所需形狀。此外,負極材料亦可包含理論容量比碳系活性物質大之矽或矽化合物、鍺、錫或鉛等。又,電解質係除了將鋰鹽溶解於有機溶劑之有機電解液以外,亦可使用由聚乙二醇或聚偏二氟乙烯等形成之聚合物。本發明之複合銅箔,除了用於鋰離子電池以外,亦可適用於鋰離子聚合物電池。 Utilization method of composite copper component: The composite copper component of the present invention can be used for electronic components such as copper foil used for printed wiring boards, copper wires for wiring on substrates, and copper foil used for LIB negative electrode current collectors. For example, the composite copper foil of the present invention and resin are bonded into a layered form to prepare a laminate for use in manufacturing printed wiring boards. The type of resin in this case is not particularly limited, but is preferably polyphenylene ether, epoxy resin, PPO, PBO, PTFE, LCP or TPPI. Furthermore, by using the composite copper foil of the present invention as a LIB negative electrode current collector, the adhesion between the copper foil and the negative electrode material can be improved, and a good lithium ion battery with less capacity degradation can be obtained. The negative electrode current collector used in lithium ion batteries can be manufactured according to conventional methods. For example, a negative electrode material containing a carbon-based active material is prepared and dispersed in a solvent or water to form an active material slurry. After the active material slurry is coated on the composite copper foil of the present invention, the solvent or water is evaporated and dried. After that, it is pressed and dried again to form the negative electrode current collector into the desired shape. In addition, the negative electrode material may also include silicon or silicon compounds, germanium, tin or lead, etc., which have a larger theoretical capacity than the carbon-based active material. In addition, as the electrolyte, in addition to an organic electrolyte solution in which a lithium salt is dissolved in an organic solvent, a polymer made of polyethylene glycol, polyvinylidene fluoride, or the like can also be used. In addition to being used in lithium-ion batteries, the composite copper foil of the present invention can also be used in lithium-ion polymer batteries.
(實施例)<1.製造複合銅箔>:比較例2~8及實施例1~5 使用DR-WS(古河電工股份有限公司製,厚度18μm)銅箔的亮面(光澤面,與相反面比較時為平坦之面)。實施例6同樣使用DR-WS但使用霧面(消光面,與相反面比較時為較粗的面)。比較例1使用FV-WS(古河電工股份有限公司製,厚度18μm)的霧面。又,比較例1的銅箔不進行本發明的氧化處理等表面處理。 (Examples) <1. Production of composite copper foil>: Comparative Examples 2 to 8 and Examples 1 to 5 The bright side (glossy side, flat side when compared with the opposite side) of DR-WS (furukawa Electric Co., Ltd., thickness 18 μm) copper foil was used. Example 6 also uses DR-WS but uses a matte surface (matte surface, which is a rougher surface when compared with the opposite surface). Comparative Example 1 used the matte surface of FV-WS (manufactured by Furukawa Electric Co., Ltd., thickness 18 μm). In addition, the copper foil of Comparative Example 1 was not subjected to surface treatment such as oxidation treatment of the present invention.
(1)前處理:〔鹼脫脂處理〕將銅箔浸漬於液溫50℃、40g/L之氫氧化鈉水溶液中1分鐘後,進行水洗。 (1) Pretreatment: [Alkali degreasing treatment] Immerse the copper foil in a sodium hydroxide aqueous solution with a liquid temperature of 50°C and 40g/L for 1 minute, and then wash with water.
〔酸洗處理〕將經過鹼脫脂處理之銅箔浸漬於液溫25℃、10重量%之硫酸水溶液中2分鐘後,進行水洗。 [Pickling treatment] The copper foil that has been subjected to alkali degreasing treatment is immersed in a 10% by weight sulfuric acid aqueous solution with a liquid temperature of 25°C for 2 minutes, and then washed with water.
〔預浸處理〕將經過酸洗處理之銅箔浸漬於液溫40℃、氫氧化鈉(NaOH)1.2g/L之預浸用藥液中1分鐘。 [Pre-soaking treatment] Immerse the pickled copper foil in a pre-soaking solution with a liquid temperature of 40°C and sodium hydroxide (NaOH) 1.2g/L for 1 minute.
(2)氧化處理:對於經過鹼處理之銅箔,實施例1~6及比較例4~7係以氧化處理用水溶液(NaClO2 60g/L;NaOH 9g/L;3-環氧丙基氧丙基三甲氧基矽烷2g/L)於73℃進行氧化處理2分鐘。比較例8係以氧化處理用水溶液(NaClO2 37.5g/L;NaOH 100g/L)於73℃進行氧化處理4分鐘。經過該等處理後水洗銅箔。 (2) Oxidation treatment: For the alkali-treated copper foil, Examples 1 to 6 and Comparative Examples 4 to 7 were treated with an oxidation treatment aqueous solution (NaClO 2 60g/L; NaOH 9g/L; 3-epoxypropyl oxide Propyltrimethoxysilane 2g/L) was oxidized at 73°C for 2 minutes. In Comparative Example 8, an oxidation treatment was performed with an aqueous oxidation treatment solution (NaClO 2 37.5 g/L; NaOH 100 g/L) at 73° C. for 4 minutes. After these treatments, the copper foil is washed with water.
比較例4在氧化處理後,於室溫浸漬於還原劑(二甲基胺硼烷5g/L;氫氧化鈉5g/L)1分鐘,進行還原處理。 Comparative Example 4 was immersed in a reducing agent (dimethylamine borane 5 g/L; sodium hydroxide 5 g/L) at room temperature for 1 minute after the oxidation treatment, and the reduction treatment was performed.
(3)鍍敷處理:實施例1~6及比較例6~8中,對經過氧化處理之銅箔,以鎳鍍用電解液(硫酸鎳240g/L;氯化鎳45g/L;檸檬酸三鈉20g/L)施加電鍍(銅箔每單位面積的電流密度0.5A/dm2)。比較例2及比較例3不進行氧化處理,以同樣的鎳鍍用電解液施加電鍍。處理時間分別是50秒(實施例1)、60秒(實施例2)、70秒(實施例3)、100秒(實施例4)、120秒(實施例5)、130秒(實施例6)、10秒(比較例2)、35秒(比較 例3)、40秒(比較例6)、150秒(比較例7)、220秒(比較例8)。 (3) Plating treatment: In Examples 1 to 6 and Comparative Examples 6 to 8, the oxidized copper foil was treated with the electrolyte for nickel plating (nickel sulfate 240g/L; nickel chloride 45g/L; citric acid Trisodium 20g/L) is electroplated (current density per unit area of copper foil 0.5A/dm 2 ). In Comparative Examples 2 and 3, no oxidation treatment was performed, and electroplating was performed using the same nickel plating electrolyte solution. The processing times are respectively 50 seconds (Example 1), 60 seconds (Example 2), 70 seconds (Example 3), 100 seconds (Example 4), 120 seconds (Example 5), and 130 seconds (Example 6). ), 10 seconds (Comparative Example 2), 35 seconds (Comparative Example 3), 40 seconds (Comparative Example 6), 150 seconds (Comparative Example 7), and 220 seconds (Comparative Example 8).
(4)耦合處理:對實施1~6及比較例2~8,使用3-胺基丙基三乙氧基矽烷(1重量%)於室溫處理銅箔1分鐘後,於110℃燒製1分鐘。 (4) Coupling treatment: For Examples 1 to 6 and Comparative Examples 2 to 8, the copper foil was treated with 3-aminopropyltriethoxysilane (1% by weight) at room temperature for 1 minute, and then fired at 110°C. 1 minute.
對於實施例及比較例,分別以相同條件製作數個試片。比較例2~8及實施例1~5係以施加表面處理的亮面作為評價面,實施例6係以施加表面處理的霧面作為評價面,比較例1係以霧面作為評價面。 For Examples and Comparative Examples, several test pieces were produced under the same conditions. In Comparative Examples 2 to 8 and Examples 1 to 5, the shiny surface with surface treatment was used as the evaluation surface. In Example 6, the matte surface with surface treatment was used as the evaluation surface. In Comparative Example 1, the matte surface was used as the evaluation surface.
<2.算出Rz>:將實施例及比較例的試片使用共軛焦掃描式電子顯微鏡OPTELICS H1200(Lasertec股份有限公司製)觀察,由觀察結果製作輪廓曲線,根據JIS B 0601:2001規定之方法算出Rz。測定條件:掃描寬度為100μm、掃描類型為Area、光源為藍光、Cut-off值為1/5。接物鏡x100、目鏡x14、數位變焦x1、Z間距設為10nm,取得3個位置之資料,3個位置的平均值作為Rz。 <2. Calculation of Rz>: The test pieces of the examples and comparative examples were observed using a conjugate focal scanning electron microscope OPTELICS H1200 (manufactured by Lasertec Co., Ltd.), and a profile curve was created from the observation results in accordance with JIS B 0601:2001. Method to calculate Rz. Measurement conditions: scanning width is 100 μm, scanning type is Area, light source is blue light, and Cut-off value is 1/5. Connect the objective lens x100, the eyepiece x14, the digital zoom x1, and set the Z pitch to 10nm. Obtain the data at 3 positions, and the average of the 3 positions is taken as Rz.
<3.RSm及表面積率測定>:以原子力顯微鏡(AFM:Atomic Force Microscope)觀察並根據JIS R 1683:2007算出實施例及比較例的試片之RSm及表面積率。僅有比較例1係計算Ra=150nm。 <3.Measurement of RSm and surface area ratio>: The RSm and surface area ratio of the test pieces of the examples and comparative examples were calculated based on JIS R 1683:2007 by observing with an atomic force microscope (AFM: Atomic Force Microscope). Only in Comparative Example 1, Ra=150nm was calculated.
裝置:日立High-Tech Science製 Device: Made by Hitachi High-Tech Science
probe station AFM5000II probe station AFM5000II
連接機種:AFM5300E Connected model: AFM5300E
懸臂:SI-DF40 Cantilever: SI-DF40
使用AFM5000II之自動設定機能來設定 Use the automatic setting function of AFM5000II to set
(振幅衰減率、掃描頻率、I gain、P gain、A gain、S gain) (Amplitude attenuation rate, scanning frequency, I gain, P gain, A gain, S gain)
掃描區域:5μm見方 Scanning area: 5μm square
畫素數:512x512 Number of pixels: 512x512
測定模式:DFM Measurement mode: DFM
測定視野:5μm Measurement field of view: 5μm
SIS模式:不使用 SIS mode: not used
掃描器:20μm掃描器 Scanner: 20μm scanner
測定方法:進行3次修正來測量。 Measurement method: Measure with 3 corrections.
◆RSm:平均截面解析(lr=5μm) ◆RSm: Average cross-section analysis (lr=5μm)
◆表面積率:面粗度解析 ◆Surface area ratio: Surface roughness analysis
<4.明度L*測定>:L*a*b*表色系統明度L*之測定係用日本電色工業股份有限公司製的分光色差計NF999(照明條件:C;視角條件:2;測定項目:L*a*b*)來進行。 <4. Measurement of lightness L * >: L * a * b * Color system lightness L * was measured using a spectrophotometer NF999 manufactured by Nippon Denshoku Industries Co., Ltd. (illumination condition: C; viewing angle condition: 2; measurement Project: L * a * b * ) to carry out.
<5.鍍敷厚度測定及表面元素分析>鍍敷於垂直方向之平均厚度的測定方法係將銅構件溶解於12%硝酸,將所得之液使用ICP發射光譜裝置5100 SVDV ICP-OES(Agilent Technologies公司製)分析並測定金屬的濃度,藉由考慮金屬密度、金屬層的表面積來算出層狀之金屬層的厚度。表面元素分析係使用QuanteraSPM(ULVAC-PHI製)用以下步驟進行最外表面窄譜分析(narrow),確認形成有金屬層之表面上能否偵測銅及銅以外之金屬。 <5. Plating thickness measurement and surface element analysis> The average thickness of plating in the vertical direction is measured by dissolving the copper component in 12% nitric acid, and using the resulting liquid with an ICP emission spectrometer 5100 SVDV ICP-OES (Agilent Technologies Co., Ltd.) analyzes and measures the metal concentration, and calculates the thickness of the layered metal layer by considering the metal density and the surface area of the metal layer. For surface element analysis, QuanteraSPM (manufactured by ULVAC-PHI) was used to perform narrow spectrum analysis (narrow) on the outermost surface using the following steps to confirm whether copper and metals other than copper can be detected on the surface where the metal layer is formed.
(1)Survey Spectrum (1)Survey Spectrum
首先用以下條件偵測元素。 First detect the element using the following conditions.
X射線束直徑:100μm(25w15kV) X-ray beam diameter: 100μm (25w15kV)
Pass energy:280eV,1eV step Pass energy: 280eV, 1eV step
線分析:φ 100μm*700μm Line analysis: φ 100μm*700μm
累計次數 6次 Cumulative times: 6 times
(2)Narrow Spectrum (2)Narrow Spectrum
對於(1)偵測之元素,用以下條件取得窄譜,偵測到之成分中,氮、碳 以外之元素量的總計作為100%時,以定量值算出各偵測成分比值。 For the elements detected in (1), the following conditions are used to obtain a narrow spectrum. Among the detected components, nitrogen and carbon When the total amount of other elements is taken as 100%, the ratio of each detected component is calculated as a quantitative value.
X射線束直徑:100μm(25w15kV) X-ray beam diameter: 100μm (25w15kV)
Pass energy:112eV,0.1eV step Pass energy: 112eV, 0.1eV step
線分析:φ 100μm*700μm Line analysis: φ 100μm*700μm
<6.銅箔的耐熱性測定>對實施例及比較例之試片,藉由加熱造成之顏色變化來測試耐熱性。測定熱處理前之試片的色差(L*、a*、b*)後,放入225℃之烘箱30分鐘,測定熱處理後之試片的色差。由所得之值根據下式算出△E*ab。 <6. Measurement of heat resistance of copper foil> The heat resistance of the test pieces of the examples and comparative examples was tested by color change caused by heating. After measuring the color difference (L*, a*, b*) of the test piece before heat treatment, place it in an oven at 225°C for 30 minutes, and measure the color difference of the test piece after heat treatment. From the obtained value, ΔE*ab is calculated according to the following formula.
△E*ab=[(△L*)2+(△a*)2+(△b*)2]1/2 △E * ab=[(△L * ) 2 +(△a * ) 2 +(△b * ) 2 ] 1/2
<7.剝離強度(常態、耐酸測試後)測定>又,對實施例及比較例之試片測定酸處理前後之剝離強度。具體而言,首先,對於各銅箔積層預浸體R5670KJ(Panasonic公司製,厚度100μm),使用真空高壓壓製機,以加壓壓力2.9MPa、溫度210℃、壓製時間120分鐘之條件進行加熱壓製,藉此得到積層體。對於實施例及比較例,分別用相同條件製作數個積層體。為了得知其對酸之耐性,一個積層體保持原狀(常態),另一個積層體浸漬於酸液後(耐酸測試後)作為測定試料。又,酸液浸漬係藉由將積層體在60℃浸漬於4N鹽酸90分鐘來進行。對於該等測定試料進行90°剝離測試(日本工業規格(JIS)C5016),測定剝離強度(kgf/cm)。 <7. Measurement of Peel Strength (Normal, After Acid Resistance Test)> In addition, the peel strength of the test pieces of Examples and Comparative Examples was measured before and after acid treatment. Specifically, first, each copper foil laminated prepreg R5670KJ (manufactured by Panasonic, thickness 100 μm) was heated and pressed using a vacuum high-pressure press under the conditions of a pressurizing pressure of 2.9 MPa, a temperature of 210° C., and a pressing time of 120 minutes. , thereby obtaining a laminated body. For Examples and Comparative Examples, several laminated bodies were produced under the same conditions. In order to know its resistance to acid, one laminated body was kept as it was (normal), and the other laminated body was immersed in an acid solution (after the acid resistance test) and was used as a measurement sample. Moreover, the acid liquid immersion was performed by immersing the laminated body in 4N hydrochloric acid at 60 degreeC for 90 minutes. The 90° peel test (Japanese Industrial Standard (JIS) C5016) was performed on these measurement samples, and the peel strength (kgf/cm) was measured.
<8.高頻特性測定>對實施例2及比較例1之試片,將樹脂基材預浸體R5670KJ(Panasonic公司製)以熱加壓成形積層後,製作傳輸特性測定用的樣品,測定高頻帶之傳輸損失。傳輸特性之評價係使用適合0~40GHz頻帶測定之習知帶狀線諧振器法來測定。具體而言,用以下條件在無覆蓋膜(coverlay film)的狀態下測定S21參數。測定條件:微帶線構造;基材預浸體R5670KJ;電路長度:100mm;導體寬度250μm;導體厚度28μm; 基材厚度100μm;特性阻抗50Ω。 <8. Measurement of High Frequency Characteristics> For the test pieces of Example 2 and Comparative Example 1, the resin base material prepreg R5670KJ (manufactured by Panasonic Corporation) was laminated by hot press molding, and then a sample for measuring transmission characteristics was produced and measured. Transmission loss in high frequency bands. The evaluation of transmission characteristics is measured using the conventional stripline resonator method suitable for measurement in the 0~40GHz frequency band. Specifically, the S21 parameter was measured without a coverlay film under the following conditions. Measurement conditions: microstrip line structure; base material prepreg R5670KJ; circuit length: 100mm; conductor width 250μm; conductor thickness 28μm; The substrate thickness is 100μm; the characteristic impedance is 50Ω.
<9.結果>結果如第1表及第1~6圖所示。 <9. Results> The results are shown in Table 1 and Figures 1 to 6.
第1表
比較例1的RSm大,未形成微細凹凸且L*升高。由於RSm大且表面積率高,故表面積的增大系被認為不是平面方向的緻密度增加,而是高度方向增加,實際上Rz較大,如第6圖所示之集膚效應的影響導致實際上的高頻特性惡化。比較例2、3的RSm大且表面積率小,故被認為未得到密著性。比較例4無鍍敷,故耐熱變色(△E*ab)大。比較例5無鍍敷,僅有氧化處理,故微細凹凸中氧化銅為主成分,故耐酸測試的剝離強度降低。比較例6的鍍敷厚度不足,故耐熱變色值大。比較例7的鍍敷厚度太厚而產生整平作用,故RSm增大,且表面積率變小,故結果為剝離強度降低。比較例8的表面積率過大,故鍍敷不均,發生耐熱變色。相較於此,表面的粗度曲線參數的平均長度(Rsm)為550nm以下(第1圖)、表面積率為1.3以上且2.2以下(第2圖)、金屬層於垂直方向的平均厚度為15nm以上且150nm以下(第5圖)、明度L*值未滿35(第3圖)之實施例1~6的複合銅箔,其剝離強度高,耐熱變色(△E*ab)小,即使經過耐酸測試後剝離強度亦不降低。又,實施例2的高頻特性亦良好。 Comparative Example 1 has a large RSm, no fine unevenness and an elevated L * . Since RSm is large and the surface area ratio is high, the increase in surface area is considered not to be an increase in density in the plane direction, but in the height direction. In fact, Rz is larger. As shown in Figure 6, the influence of the skin effect leads to actual The high-frequency characteristics deteriorate. Since the RSm of Comparative Examples 2 and 3 was large and the surface area ratio was small, it was considered that adhesion was not obtained. Comparative Example 4 has no plating, so the heat-resistant discoloration (ΔE * ab) is large. Comparative Example 5 has no plating and only oxidation treatment. Therefore, copper oxide is the main component in the fine unevenness, so the peel strength in the acid resistance test is reduced. The plating thickness of Comparative Example 6 was insufficient, so the heat discoloration resistance value was large. The plating thickness of Comparative Example 7 was too thick and caused a leveling effect, so RSm increased and the surface area ratio became small, resulting in a decrease in peel strength. The surface area ratio of Comparative Example 8 was too large, so the plating was uneven and heat-resistant discoloration occurred. In comparison, the average length (Rsm) of the surface roughness curve parameter is 550nm or less (Figure 1), the surface area ratio is 1.3 or more and 2.2 or less (Figure 2), and the average thickness of the metal layer in the vertical direction is 15nm. The composite copper foils of Examples 1 to 6, which are above and below 150nm (Figure 5) and have a brightness L * value of less than 35 (Figure 3), have high peel strength and small heat-resistant discoloration (△E * ab). Even after passing The peel strength does not decrease after the acid resistance test. In addition, the high frequency characteristics of Example 2 are also good.
產業利用性:根據本發明,可提供新穎的複合銅構件、使用其之積層體及電子零件。 Industrial Applicability: According to the present invention, novel composite copper members, laminates using the same, and electronic components can be provided.
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