TWI858582B - Identification circuit of inkjet head chip - Google Patents
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- TWI858582B TWI858582B TW112107906A TW112107906A TWI858582B TW I858582 B TWI858582 B TW I858582B TW 112107906 A TW112107906 A TW 112107906A TW 112107906 A TW112107906 A TW 112107906A TW I858582 B TWI858582 B TW I858582B
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- 230000005669 field effect Effects 0.000 claims description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims description 14
- 150000004706 metal oxides Chemical class 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims 1
- 238000007639 printing Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000007641 inkjet printing Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
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Abstract
Description
本發明係有關一種噴墨頭晶片識別電路,更詳而言之,為一種藉由改善噴墨頭中記憶單元結構,以增加墨水匣資料記錄彈性和資料安全的噴墨頭晶片識別電路。The present invention relates to an inkjet head chip identification circuit, and more specifically, to an inkjet head chip identification circuit which improves the structure of a memory unit in the inkjet head to increase the data recording flexibility and data security of the ink cartridge.
噴墨列印技術,通常稱為「Inkjet Printing」,是一種廣泛使用的印刷技術,它的歷史可以追溯到1950年代,當時英國HP公司(Hewlett-Packard)發明了噴墨印刷技術。自那時以來,噴墨列印技術發展迅速,使得噴墨印表機成為家庭和商用印刷的主流技術,噴墨印表機擁有許多優點,包含:成本低廉,尤其在家庭和小型商業用途方面具有經濟優勢;較高的印刷品質,可以提供高解析度和高品質的圖像,特別是在照片或圖片方面;方便使用,噴墨印表機易於安裝,且大多數噴墨印表機可以通過電腦或移動設備進行印刷,與近年來興起具有多合一功能(包含傳真、影印、掃描)的事務機結合可迅速擴展辦公室中的文書作業彈性。Inkjet printing technology, commonly known as "Inkjet Printing", is a widely used printing technology. Its history can be traced back to the 1950s when the British HP (Hewlett-Packard) invented inkjet printing technology. Since then, inkjet printing technology has developed rapidly, making inkjet printers the mainstream technology for home and commercial printing. Inkjet printers have many advantages, including: low cost, especially economical for home and small business use; high print quality, which can provide high resolution and high quality images, especially in photos or pictures; convenient to use, inkjet printers are easy to install, and most inkjet printers can print through computers or mobile devices. Combined with the emergence of office machines with all-in-one functions (including fax, photocopying, scanning) in recent years, it can quickly expand the flexibility of document work in the office.
噴墨印表機中噴墨頭識別電路是噴墨列印技術中的一個重要元件。由於每一種類型的噴墨印表機都需要配合對應的噴墨頭,再加上各種噴墨頭皆有其特殊的規格,包含:結構、使用的墨水、噴孔數以及控制電路等特性,因此需要搭配相容的列印系統,以透過噴墨頭識別電路和噴墨印表機偕同運作,具體而言,噴墨頭識別電路包括保險絲、電晶體反保險絲和相關的電路元件,用於存儲包含但不限於墨水匣序號、墨水類型、墨水容量、墨水顏色、噴墨頭-噴墨印表機間匹配訊息等資訊,以確保印刷品質和效率。The inkjet head identification circuit in an inkjet printer is an important component in inkjet printing technology. Since each type of inkjet printer needs to be matched with a corresponding inkjet head, and each inkjet head has its own special specifications, including: structure, ink used, number of nozzles, and control circuit characteristics, it is necessary to match a compatible printing system to work with the inkjet printer through the inkjet head identification circuit. Specifically, the inkjet head identification circuit includes a fuse, a transistor reverse fuse, and related circuit components, which are used to store information including but not limited to the ink cartridge serial number, ink type, ink capacity, ink color, and matching information between the inkjet head and the inkjet printer to ensure printing quality and efficiency.
請參閱第1A圖、第1B圖,其描述了先前習知技術中,墨水匣識別電路所含記憶體中,所具有的記憶單元100存儲上述墨水匣序號、墨水類型、噴墨頭-噴墨印表機間匹配訊息等資訊的方式,該記憶單元100包含識別訊號端110、資料端120、保險絲130、電晶體器件140。更詳細而言,當資料端120提供高電位時,則電晶體器件140將處於導通狀態,同時識別訊號端110若提供低電位,則記憶單元100不會做燒錄動作,另一方面,當資料端120提供高電位時,則電晶體器件140將處於導通狀態,同時識別訊號端110若提供燒錄電位,則記憶單元100會做燒錄,如第1B圖所示,而讀取記憶單元100時,當資料端120提供高電位時,則電晶體器件140將處於導通狀態,此時識別訊號端110若讀取到未燒錄保險絲,則讀取到低電位,反之,則讀取到高電位。如此,記憶單元100可以藉由控制保險絲130的燒斷與否,來傳輸一高電位或低電位的傳輸訊號,用以表示記憶單元100中每一位元中的資訊,達到記錄資訊的目的。Please refer to FIG. 1A and FIG. 1B, which describe the method in which the
然而,上述的墨水匣識別電路仍然包含了以下的缺點。儘管透過記憶單元100中,保險絲的燒斷與否來記錄資訊確實可以輸出一具有高低電位的訊號,但基於噴墨印表機的功能日益豐富,其所包含的資訊量益發增加,單單只靠保險絲130記錄資訊除了並不足夠以外,若站在產業利用的角度,透過逆向工程仿製保險絲130於墨水匣識別電路融斷與否的態樣與順序,可以輕易的得到噴墨頭-噴墨印表機間匹配訊息,除了使企業中智慧財產的勞動被侵害外,使用者亦可能購買到劣質的墨水匣,從而影響列印的品質與權益,導致利用噴墨印表機的企業或使用者蒙受經濟上或智慧財產上的損失,故,在現行的市場上,依舊亟需一種在同一個晶片中,使經濟成本能夠維持的情況下,可有效改善資訊記錄與安全的噴墨頭晶片識別電路。However, the above ink cartridge identification circuit still has the following disadvantages. Although the information recorded by the
基於以上原因,本發明提出一種噴墨頭晶片識別電路,藉由改善噴墨頭中記憶單元,以增加記憶單元中電路元件組成的多樣性,在不增加製造成本的前提下,除了使所儲存的墨水匣序號、辨識碼(Identification Code)、墨水類型、墨水容量、墨水顏色、噴墨頭溫度等資訊記錄更為詳細完整外,亦可以增加逆向工程仿製噴墨頭晶片識別電路的難度,提高智慧財產保護的效力。其中,所述的噴墨頭晶片識別電路包含了以下元件:識別電路,匹配噴墨印表機,使噴墨印表機根據其匹配結果供應噴墨頭晶片列印時所需的資訊;其中,識別電路包含多個記憶單元,該多個記憶單元形成陣列結構,並進一步包含保險絲與第一電晶體,藉由燒錄或不燒錄上述的保險絲與第一電晶體,藉此讀取記憶單元的資料訊號。其中,在本發明的實施例中,上述的第一電晶體為電晶體反保險絲(MOSFET Anti-Fuse),且上述的保險絲與第一電晶體被生成在同一噴墨頭晶片上。Based on the above reasons, the present invention proposes an inkjet head chip identification circuit, which improves the memory unit in the inkjet head to increase the diversity of the circuit component composition in the memory unit. Without increasing the manufacturing cost, in addition to making the stored information such as the ink cartridge serial number, identification code, ink type, ink capacity, ink color, inkjet head temperature, etc. more detailed and complete, it can also increase the difficulty of reverse engineering and counterfeiting the inkjet head chip identification circuit, thereby improving the effectiveness of intellectual property protection. The inkjet head chip identification circuit includes the following components: an identification circuit, which matches the inkjet printer, so that the inkjet printer supplies the information required for the inkjet head chip to print according to the matching result; wherein the identification circuit includes a plurality of memory cells, the plurality of memory cells form an array structure, and further includes a fuse and a first transistor, and the data signal of the memory cell is read by burning or not burning the fuse and the first transistor. In the embodiment of the present invention, the first transistor is a transistor anti-fuse (MOSFET Anti-Fuse), and the fuse and the first transistor are generated on the same inkjet head chip.
根據本發明之內容,所述的第一電晶體可為金氧半場效電晶體(MOSFET),並可依應用的需要選自N型金氧半場效電晶體(NMOS)或P型金氧半場效電晶體(PMOS)。此外,所述的保險絲同樣可依應用的需要選自多晶矽保險絲(polyfuse)或金屬保險絲(metal fuse)。According to the content of the present invention, the first transistor can be a metal oxide semiconductor field effect transistor (MOSFET), and can be selected from N-type metal oxide semiconductor field effect transistor (NMOS) or P-type metal oxide semiconductor field effect transistor (PMOS) according to the needs of the application. In addition, the fuse can also be selected from polysilicon fuse (polyfuse) or metal fuse (metal fuse) according to the needs of the application.
根據本發明之內容,每個記憶單元進一步包含識別訊號端、資料端,以及第二電晶體。其中,所述的識別訊號端與保險絲或第一電晶體連接,所述的資料端與第二電晶體之閘級連接,而保險絲或第一電晶體則和第二電晶體連接。According to the content of the present invention, each memory unit further includes an identification signal terminal, a data terminal, and a second transistor. The identification signal terminal is connected to a fuse or a first transistor, the data terminal is connected to a gate of the second transistor, and the fuse or the first transistor is connected to the second transistor.
本發明將以較佳之實施例及觀點加以詳細敘述。下列描述提供本發明特定的施行細節,俾使閱讀者徹底瞭解這些實施例之實行方式。然該領域之熟習技藝者須瞭解本發明亦可在不具備這些細節之條件下實行。此外,本發明亦可藉由其他具體實施例加以運用及實施,本說明書所闡述之各項細節亦可基於不同需求而應用,且在不悖離本發明之精神下進行各種不同的修飾或變更,因此本發明將以較佳實施例及觀點加以敘述,此類敘述係解釋本發明之結構,僅用以說明而非用以限制本發明之申請專利範圍。以下描述中使用之術語將以最廣義的合理方式解釋,使其能與本發明某特定實施例之細節描述一起使用,本領域熟知技術者自可依製造或應用需求調整本發明之結構以符合實際產業的需求,其中在本說明書中,所提到的保險絲可被簡稱為Fuse,而第一電晶體可被簡稱為MOS,而第一電晶體若為電晶體反保險絲(MOSFET Anti-Fuse)時,在本說明書中亦可被簡稱為MOS或MOS-Anti-Fuse,由此先行敘明。The present invention will be described in detail with preferred embodiments and viewpoints. The following description provides specific implementation details of the present invention so that the reader can fully understand the implementation methods of these embodiments. However, those skilled in the art should understand that the present invention can also be implemented without these details. In addition, the present invention can also be used and implemented through other specific embodiments. The various details described in this specification can also be applied based on different needs, and various modifications or changes can be made without departing from the spirit of the present invention. Therefore, the present invention will be described with preferred embodiments and viewpoints. Such descriptions are to explain the structure of the present invention and are only used for illustration and not to limit the scope of the patent application of the present invention. The terms used in the following description will be interpreted in the broadest reasonable manner so that they can be used together with the detailed description of a specific embodiment of the present invention. Those skilled in the art can adjust the structure of the present invention according to manufacturing or application requirements to meet the needs of the actual industry. In this specification, the fuse mentioned can be abbreviated as Fuse, and the first transistor can be abbreviated as MOS. If the first transistor is a transistor anti-fuse (MOSFET Anti-Fuse), it can also be abbreviated as MOS or MOS-Anti-Fuse in this specification, and this is explained in advance.
請參閱第2A圖、第2B圖、第3A圖、第3B圖、第3C圖、第3D圖,以及第3E圖,在本發明一實施例中,提出一種噴墨頭晶片識別電路200,包含了以下元件:識別電路210,匹配噴墨印表機,使噴墨印表機得根據其匹配結果供應噴墨頭晶片列印所需的資訊;其中,識別電路210包含多個記憶單元211,該多個記憶單元211形成陣列結構,並且每一記憶單元211進一步包含保險絲211F與第一電晶體211C,經由燒錄或不燒錄上述的保險絲211F與第一電晶體211C,藉此控制記憶單元211輸出資料訊號,使得識別電路210能夠依照記憶單元211所形成的陣列結構提供但不限於與噴墨印表機匹配所相應的墨水匣序號、辨識碼(Identification Code)、墨水類型、墨水容量、墨水顏色等資訊,進而使噴墨印表機得以辨識墨水匣中,噴墨頭之型號以及種類等資訊。其中,所述的第一電晶體211C為一電晶體反保險絲(MOSFET Anti-Fuse),且該保險絲211F與第一電晶體211C被生成在同一噴墨頭晶片上。Referring to FIG. 2A, FIG. 2B, FIG. 3A, FIG. 3B, FIG. 3C, FIG. 3D, and FIG. 3E, in one embodiment of the present invention, an inkjet head
在本發明另一實施例中,提出一種噴墨頭晶片識別電路200,包含了以下元件:識別電路210,匹配噴墨印表機,使噴墨印表機得根據其匹配結果供應噴墨頭晶片列印所需的資訊;其中,識別電路210包含多個記憶單元211,該多個記憶單元211形成陣列結構,並且每一記憶單元211進一步包含第一電晶體211C,經由燒錄或不燒錄上述的第一電晶體211C,藉此控制記憶單元211輸出資料訊號,使得識別電路210能夠依照記憶單元211所形成的陣列結構提供但不限於與噴墨印表機匹配所相應的墨水匣序號、辨識碼(Identification Code)、墨水類型、墨水容量、墨水顏色等資訊,進而使噴墨印表機得以辨識墨水匣中,噴墨頭之型號以及種類等資訊。In another embodiment of the present invention, an inkjet head
承上述,請繼續參閱第3A圖、第3B圖、第3C圖,以及第3D圖,其中,在本發明的實施例中,第3A圖、第3B圖中的第一電晶體211C為P型,而在第3C圖、第3D圖中的第一電晶體211C為N型。另外,第3E圖則說明本發明一實施例中,記憶單元211的電路結構中採用保險絲211F時的態樣。此外,在本發明的實施例中,為了提供燒錄保險絲211F與第一電晶體211C的功能,每個記憶單元211進一步包含識別訊號端211A、資料端211B,以及第二電晶體211E。其中,識別訊號端211A傳輸一識別電位,並在記憶單元211中與保險絲211F或第一電晶體211C連接用以控制燒錄/不燒錄保險絲211F或第一電晶體211C,此外,所述的資料端211B則傳輸一資料電位,並與第二電晶體211E的閘級G連接,而所述的保險絲211F則和第二電晶體211E連接。其中,記憶單元211藉由調控資料電位和識別電位,以控制資料訊號的輸出。而在本發明的一些實施例中,第一電晶體211C則可選自金氧半場效電晶體(MOSFET),並可選自N型或P型,此外,保險絲211F則可選自多晶矽保險絲(polyfuse)或金屬保險絲(metalfuse),所述的第一電晶體211C與保險絲211F均可依據實際應用的需要選自上述類型並進行任意組合,藉此提高資訊紀錄的彈性。In accordance with the above, please continue to refer to FIG. 3A, FIG. 3B, FIG. 3C, and FIG. 3D. In the embodiment of the present invention, the
請參閱第4A圖、第4B圖、第5A圖、第5B圖,其說明了第一電晶體211C在記憶單元211中燒綠與未燒錄時的狀態,根據該狀態的不同,可使記憶單元211輸出一二進制(binary digit)的資料訊號。其中,在第4A圖與第4B圖中,說明了在本發明一實施例中,第一電晶體211C選用N型金氧半場效電晶體的情形。在第4A圖中,該第一電晶體211C的閘極G下端具有一閘氧化層GOX,當識別訊號端211A提供的識別電位小於一崩潰電位時,閘氧化層GOX的結構完好,若此時資料端211B提供高電位時,則第二電晶體211E將處於導通狀態,則識別訊號端211A在記憶單元211中將被讀取出一高電阻狀態,其所輸出的資料訊號顯示記憶單元211為未燒錄狀態。另一方面,在第4B圖中,識別訊號端211A所提供的電位大於崩潰電位時,此時閘氧化層GOX的結構發生崩潰,使得閘極G與第一電晶體211C的基體(substrate)連接而產生不可逆的損壞,此會使識別訊號端211A在記憶單元211中將被讀取出一低電阻狀態,則所輸出該資料訊號顯示記憶單元211為已燒錄狀態,達到輸出二進制的資料訊號之目的。應注意者為,在本發明中,上述二進制的資料訊號並不限定0與1必然對應低電阻或高電阻,其亦可由1與0分別對應高電阻或低電阻,其當可依照實際的應用加以設定、變更或修飾。此外,在第5A圖、第5B圖中,其描述了第一電晶體211C亦可選用P型金氧半場效電晶體,同樣可通過控制識別訊號端211A提供的電位大小控制閘氧化層GOX是否發生崩潰,藉此燒錄/不燒錄記憶單元211,以達到控制輸出二進制的資料訊號之目的,基於其燒錄/不燒錄的機制相同於N型金氧半場效電晶體,以下則不再贅述。Please refer to FIG. 4A, FIG. 4B, FIG. 5A, and FIG. 5B, which illustrate the states of the
於一實施例中,請參閱第6圖和第7圖,其說明了在識別電路210中,由複數個記憶單元211組成的MOS-Fuse之陣列結構,其中,所述的MOS-Fuse係指如第3A圖或第3B圖中,每一個記憶單元211的種類,係為採用保險絲211F或第一電晶體211C,在該陣列結構中,記憶單元211的種類均可採用保險絲211F或第一電晶體211C。在本發明的一觀點中,當保險絲211F選自多晶矽保險絲或金屬保險絲,而第一電晶體211C選自PMOS、NMOS時,其每一個記憶單元211至少會存在下列的4種態樣:
以上的多種態樣在識別電路210的組合態樣,可以讓識別電路210中的每一個記憶單元211的多元性增加,也就是說,當該識別電路210的陣列結構具有N個記憶單元211時,即代表該陣列結構的設置可擁有多種紀錄資料的方式,如此架構的好處,首先就經濟方面考量,可使MOS、Fuse共存的識別電路210的製造成本相較於先前技術僅使用保險絲130的情況不會變化(或變化不大),而若從資料訊號紀錄的考量,由於其識別電路210的燒錄類型選擇變多,亦可使識別電路210的紀錄更多與更完整的資訊,例如墨水匣序號、辨識碼(Identification Code)、墨水類型、墨水容量、墨水顏色、噴墨頭溫度等。最後,就資訊安全與智慧財產的方面考量,由於噴墨頭晶片識別電路200在與噴墨印表機匹配的過程中需搭配相關的識別軟體、識別程式或識別演算法,則識別電路210的燒錄類型與多元性的增加,也可以提升噴墨頭晶片識別電路200在資安加密上的嚴密性,藉此保障企業的智慧財產與使用者的相關權益。應注意者為,第6圖由複數個記憶單元211組成的MOS-Fuse之陣列結構僅為說明,在本發明實際的應用中並不會加以限制MOS與Fuse在陣列結構中的擺放位置(即每一個記憶單元211的選擇態樣)與位元數量,例如第7圖即為上述說明中的另一種實施態樣,因此本領域熟知技術者當可在閱讀完本說明書依據實際的應用加以選用或修飾。The combination of the above-mentioned various aspects in the
綜合以上,本發明藉由改善噴墨頭晶片識別電路中記憶單元結構,增加了傳統墨水匣資料記錄彈性和資訊安全,其當得由熟習此技術之人士任施匠思而為諸般修飾,然皆不脫如附申請專利範圍所欲之保護。In summary, the present invention improves the memory unit structure in the inkjet head chip identification circuit, thereby increasing the data recording flexibility and information security of the traditional ink cartridge. It can be modified in various ways by a person skilled in the art, but all of them are within the scope of protection intended by the attached patent application.
100:記憶單元
110:識別訊號端
120:資料端
130:保險絲
140:電晶體器件
200:噴墨頭晶片識別電路
210:識別電路
211:記憶單元
211A:識別訊號端
211B:資料端
211C:第一電晶體
211E:第二電晶體
211F:保險絲
G:閘極
N:N型
P:P型
GOX:閘氧化層
MOS-Anti-Fuse:金氧半場效電晶體反保險絲
Fuse:保險絲
100: memory unit
110: identification signal terminal
120: data terminal
130: fuse
140: transistor device
200: inkjet head chip identification circuit
210: identification circuit
211:
如下所述之對本發明的詳細描述與實施例之示意圖,應使本發明更被充分地理解;然而,應可理解此僅限於作為理解本發明應用之參考,而非限制本發明於一特定實施例之中。The detailed description of the present invention and the schematic diagrams of the embodiments described below should enable a more complete understanding of the present invention; however, it should be understood that this is only limited to a reference for understanding the application of the present invention, rather than limiting the present invention to a specific embodiment.
第1A圖說明先前技術中,記憶單元燒錄前的電路架構。 第1B圖說明先前技術中,記憶單元燒錄後的電路架構。 第2A圖說明噴墨頭晶片識別電路中,藉由識別電路匹配噴墨印表機,並根據匹配結果供應列印時所需的資訊。 第2B圖說明識別單元中所含的記憶單元所形成的陣列結構,以記錄噴墨頭中的資訊。 第3A圖說明本發明中記憶單元的電路結構。 第3B圖說明本發明中記憶單元的電路結構。 第3C圖說明本發明中記憶單元的電路結構。 第3D圖說明本發明中記憶單元的電路結構。 第3E圖說明本發明一實施例中,記憶單元的電路結構中採用保險絲時的態樣。 第4A圖說明本發明中N型金氧半場效電晶體燒錄前之剖面結構。 第4B圖說明本發明中N型金氧半場效電晶體燒錄後之剖面結構。 第5A圖說明本發明中P型金氧半場效電晶體燒錄前之剖面結構。 第5B圖說明本發明中P型金氧半場效電晶體燒錄後之剖面結構。 第6圖說明本發明記憶單元一實施例中,保險絲與第一電晶體所組成的陣列結構。 第7圖說明本發明記憶單元另一實施例中,保險絲與第一電晶體所組成的陣列結構。 FIG. 1A illustrates the circuit structure of the memory cell before burning in the prior art. FIG. 1B illustrates the circuit structure of the memory cell after burning in the prior art. FIG. 2A illustrates the inkjet head chip identification circuit, which matches the inkjet printer through the identification circuit and supplies the information required for printing according to the matching result. FIG. 2B illustrates the array structure formed by the memory cell contained in the identification unit to record the information in the inkjet head. FIG. 3A illustrates the circuit structure of the memory cell in the present invention. FIG. 3B illustrates the circuit structure of the memory cell in the present invention. FIG. 3C illustrates the circuit structure of the memory cell in the present invention. FIG. 3D illustrates the circuit structure of the memory cell in the present invention. FIG. 3E illustrates a state when a fuse is used in the circuit structure of a memory cell in an embodiment of the present invention. FIG. 4A illustrates a cross-sectional structure of an N-type metal oxide semi-conductor field effect transistor before burning in the present invention. FIG. 4B illustrates a cross-sectional structure of an N-type metal oxide semi-conductor field effect transistor after burning in the present invention. FIG. 5A illustrates a cross-sectional structure of a P-type metal oxide semi-conductor field effect transistor before burning in the present invention. FIG. 5B illustrates a cross-sectional structure of a P-type metal oxide semi-conductor field effect transistor after burning in the present invention. FIG. 6 illustrates an array structure composed of a fuse and a first transistor in an embodiment of a memory cell of the present invention. FIG. 7 illustrates an array structure composed of a fuse and a first transistor in another embodiment of the memory unit of the present invention.
210:識別電路 211:記憶單元 MOS-Anti-Fuse:金氧半場效電晶體反保險絲 Fuse:保險絲 210: Identification circuit 211: Memory unit MOS-Anti-Fuse: MOS field effect transistor anti-fuse Fuse: Fuse
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