TWI758160B - Flexible circuit substrate and chip on film package structure - Google Patents
Flexible circuit substrate and chip on film package structure Download PDFInfo
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- TWI758160B TWI758160B TW110113321A TW110113321A TWI758160B TW I758160 B TWI758160 B TW I758160B TW 110113321 A TW110113321 A TW 110113321A TW 110113321 A TW110113321 A TW 110113321A TW I758160 B TWI758160 B TW I758160B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0266—Marks, test patterns or identification means
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/282—Applying non-metallic protective coatings for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/05—Flexible printed circuits [FPCs]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1305—Moulding and encapsulation
- H05K2203/1316—Moulded encapsulation of mounted components
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
本發明是有關於一種線路基板及封裝結構,且特別是有關於一種可撓性線路基板及包括其的薄膜覆晶封裝結構。The present invention relates to a circuit substrate and a packaging structure, and in particular, to a flexible circuit substrate and a film-on-chip packaging structure including the same.
一般而言,薄膜覆晶(Chip on Film, COF)封裝結構是以覆晶接合方式將晶片接合至可撓性線路基板上,且通常為了保護可撓性線路基板上的線路,避免因刮傷或污染造成短路、斷路現象和達成防銲功能會在可撓性線路基板上形成保護膜,稱之為防銲層(Solder Resist, SR)。而防銲層在預計設置晶片的位置會形成一開口以定義出晶片接合區,然而,塗佈或印刷形成防銲層時,防銲材料可能會因流體特性或塗佈/印刷精準度差異而產生溢流或覆蓋不足的問題,造成晶片接合區的範圍超出預定規格。特別是在晶片接合區的角落處,容易聚積過多的防銲材料而溢流進入晶片接合區的預定範圍內。如此,易導致防銲層與晶片之間的間隙過狹,而影響封裝膠體填充進入晶片底部的順暢度。再者,溢流進入晶片接合區內的防銲材料也可能會影響晶片與線路間的電性連接。因此,目前通常會以人工方式藉由尺規進行量測,以確認實際上防銲層的開口形成位置(實物規格)是否符合理論上防銲層的開口形成位置(圖面規格)的設計規格。然而,在此確認的過程中往往耗時費力,進而會增加許多人力與時間成本且也容易有汙染材料的風險。Generally speaking, the chip on film (COF) package structure is to bond the chip to the flexible circuit substrate by flip-chip bonding, and usually to protect the circuit on the flexible circuit substrate from scratches Or pollution causes short circuit, open circuit phenomenon and achieves the solder resist function, which will form a protective film on the flexible circuit substrate, which is called Solder Resist (SR). The solder mask layer forms an opening at the intended location of the die to define the die bonding area. However, when coating or printing the solder mask layer, the solder mask material may vary due to differences in fluid properties or coating/printing accuracy. Problems with overflow or insufficient coverage can result, causing the extent of the wafer bond area to exceed predetermined specifications. Especially at the corners of the wafer bonding area, excessive solder resist material tends to accumulate and overflow into a predetermined range of the wafer bonding area. In this way, the gap between the solder mask and the chip is likely to be too narrow, which affects the smoothness of the filling of the encapsulant into the bottom of the chip. Furthermore, the solder resist material overflowing into the die bonding area may also affect the electrical connection between the die and the circuit. Therefore, at present, it is usually measured manually with a ruler to confirm whether the actual opening formation position (physical specification) of the solder mask conforms to the design specification of the theoretical opening formation position (drawing specification) of the solder mask. . However, the confirmation process is often time-consuming and labor-intensive, which in turn increases a lot of labor and time costs and is also prone to the risk of contaminating the material.
本發明提供一種可撓性線路基板及薄膜覆晶封裝結構,其可以在減少人力與時間成本的同時降低汙染材料的機率。The present invention provides a flexible circuit substrate and a chip-on-film packaging structure, which can reduce labor and time costs while reducing the probability of contaminating materials.
本發明的一種可撓性線路基板,包括可撓性薄膜、防銲層以及圖案化線路層。可撓性薄膜具有晶片接合區。防銲層設置於可撓性薄膜上且具有暴露出晶片接合區的開口及由開口界定出的內緣。圖案化線路層包括多個引腳與至少一參考標記。至少一參考標記位於開口的至少一角落且其一部分位於晶片接合區內並具有第一端部,而其另一部分為防銲層所覆蓋並具有第二端部。第一端部與第二端部之間的最短距離等於內緣的預定形成位置的容許公差範圍。A flexible circuit substrate of the present invention comprises a flexible film, a solder resist layer and a patterned circuit layer. The flexible film has a die bond area. The solder resist layer is disposed on the flexible film and has an opening exposing the die bonding area and an inner edge defined by the opening. The patterned circuit layer includes a plurality of pins and at least one reference mark. At least one reference mark is located at at least one corner of the opening and a part of the reference mark is located in the die bonding area and has a first end, and the other part is covered by the solder mask and has a second end. The shortest distance between the first end portion and the second end portion is equal to the allowable tolerance range of the predetermined formation position of the inner edge.
在本發明的一實施例中,上述的內緣具有相互垂直的第一邊與第二邊,第一邊與第二邊相連形成位於至少一角落的轉角。In an embodiment of the present invention, the inner edge has a first side and a second side that are perpendicular to each other, and the first side and the second side are connected to form a corner at at least one corner.
在本發明的一實施例中,上述的至少一參考標記為矩形長條圖案且數量為至少二個,且至少二個參考標記分別位於形成所述轉角的第一邊與第二邊上。In an embodiment of the present invention, the above-mentioned at least one reference mark is a rectangular strip pattern and the number is at least two, and the at least two reference marks are respectively located on the first side and the second side forming the corner.
在本發明的一實施例中,上述的矩形長條圖案的相對二個側壁分別構成第一端部與第二端部。In an embodiment of the present invention, two opposite side walls of the above-mentioned rectangular strip pattern respectively form a first end portion and a second end portion.
在本發明的一實施例中,上述的至少一參考標記具有位在晶片接合區內的第一部分、為防銲層覆蓋的第二部分以及連接第一部分與第二部分的第三部分。第一部分與第二部分具有平行第一邊與第二邊的區段。In an embodiment of the present invention, the at least one reference mark has a first portion located in the die bonding area, a second portion covered by the solder mask, and a third portion connecting the first portion and the second portion. The first portion and the second portion have sections parallel to the first side and the second side.
在本發明的一實施例中,上述的第一部分與第二部分的形狀包括L型或弧形。In an embodiment of the present invention, the shapes of the first portion and the second portion include an L-shape or an arc shape.
在本發明的一實施例中,上述的第一部分的一側壁構成第一端部,第二部分的一側壁構成第二端部。In an embodiment of the present invention, a side wall of the first portion described above constitutes a first end portion, and a side wall of the second portion constitutes a second end portion.
在本發明的一實施例中,上述的至少一參考標記不耦接多個引腳。In an embodiment of the present invention, the above-mentioned at least one reference mark is not coupled to a plurality of pins.
在本發明的一實施例中,上述的至少一參考標記為多個參考標記且分別位於開口的四個角落。In an embodiment of the present invention, the above-mentioned at least one reference mark is a plurality of reference marks and is respectively located at four corners of the opening.
本發明的一種薄膜覆晶封裝結構,包括上述的可撓性線路基板、晶片以及封裝膠體。晶片設置於晶片接合區內且電性連接多個引腳。封裝膠體至少填充於晶片與可撓性薄膜之間。晶片暴露出至少一參考標記。A film-on-chip encapsulation structure of the present invention includes the above-mentioned flexible circuit substrate, a chip and an encapsulation colloid. The chip is disposed in the chip bonding area and is electrically connected to a plurality of pins. The encapsulant is filled at least between the chip and the flexible film. The wafer exposes at least one reference mark.
基於上述,本發明於防銲層的開口的角落上設置參考標記,並將參考標記設計為第一端部與第二端部之間的最短距離等於由開口界定出的防銲層的內緣的預定形成位置的容許公差範圍,如此一來,可以直接以外觀圖形判斷防銲層是否有溢流超出規格或覆蓋不足的情形產生,不需再以人工方式藉由尺規進行量測,降低確認時間、人力支出與汙染材料的風險,因此可以在減少人力與時間成本的同時降低汙染材料的機率。Based on the above, the present invention sets reference marks on the corners of the opening of the solder mask, and designs the reference marks so that the shortest distance between the first end and the second end is equal to the inner edge of the solder mask defined by the opening The allowable tolerance range of the predetermined formation position, so that it can be directly judged by the appearance pattern whether the solder mask has overflow exceeding the specification or insufficient coverage. Identify time, labor costs, and risk of contaminating materials, so you can reduce labor and time costs while reducing the chance of contaminating materials.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows.
本文所使用之方向用語(例如,上、下、右、左、前、後、頂部、底部)僅作為參看所繪圖式使用且不意欲暗示絕對定向。Directional terms (eg, up, down, right, left, front, back, top, bottom) as used herein are used for reference only to the drawings and are not intended to imply absolute orientation.
參照本實施例之圖式以更全面地闡述本發明。然而,本發明亦可以各種不同的形式體現,而不應限於本文中所述之實施例。圖式中的層或區域的厚度、尺寸或大小會為了清楚起見而放大。相同或相似之參考號碼表示相同或相似之元件,以下段落將不再一一贅述。The present invention is more fully described with reference to the drawings of this embodiment. However, the present invention may be embodied in various forms and should not be limited to the embodiments described herein. The thickness, size or size of layers or regions in the drawings may be exaggerated for clarity. The same or similar reference numerals denote the same or similar elements, and the repeated descriptions will not be repeated in the following paragraphs.
圖1A是依照本發明一實施例的薄膜覆晶封裝結構的部分俯視示意圖。圖1B是圖1A中的晶片接合區的角落部分的放大示意圖。請參考圖1A與圖1B,在本實施例中,薄膜覆晶封裝結構1包括可撓性線路基板10、晶片20以及封裝膠體30,其中可撓性線路基板10包括具有晶片接合區101的可撓性薄膜100,晶片20設置於晶片接合區101內,而封裝膠體30至少填充於晶片20與可撓性薄膜100之間。在此,可撓性薄膜100的材質例如是聚醯亞胺(Polyimide, PI)、聚乙烯對苯二甲酸酯(polyethylene terephthalate, PET)、聚醚(polyethersulfone, PES)、碳酸脂(polycarbonate, PC)或其他適合的可撓性材料,晶片20例如是驅動晶片或任何適宜的晶片。FIG. 1A is a partial top schematic view of a chip on film package structure according to an embodiment of the present invention. FIG. 1B is an enlarged schematic view of a corner portion of the wafer bonding area in FIG. 1A . Please refer to FIG. 1A and FIG. 1B , in this embodiment, the chip on
此外,可撓性線路基板10還包括防銲層110以及圖案化線路層120,其中防銲層110設置於可撓性薄膜100上且具有暴露出晶片接合區101的開口OP及由開口OP界定出的內緣IE。另一方面,圖案化線路層120包括與晶片20電性連接的多個引腳122與至少一參考標記124,至少一參考標記124位於開口OP的至少一角落C,其中至少一參考標記124的一部分P1位於晶片接合區101內並被晶片20所暴露出來且具有第一端部E1,而至少一參考標記124的另一部分P2為防銲層110所覆蓋並具有第二端部E2。在此,防銲層110以及圖案化線路層120可以是任何適宜的材料,本發明不加以限制。In addition, the
在本實施例中,參考標記124設置於防銲層110的開口OP的角落C上且其第一端部E1與第二端部E2之間的最短距離等於防銲層110的內緣IE的預定形成位置的容許公差範圍R,如此一來,可以直接以外觀圖形判斷防銲層110是否有溢流超出規格或覆蓋不足的情形產生,不需再以人工方式藉由尺規進行量測,降低確認時間、人力支出與汙染材料的風險,因此可以在減少人力與時間成本的同時降低汙染材料的機率。In the present embodiment, the
舉例而言,防銲層110的內緣IE的預定形成位置的容許公差範圍R例如是±150微米(即偏差上限值為+150微米,偏差下限值為-150微米),也就是第一端部E1至內緣IE的預定形成位置與第二端部E2至內緣IE的預定形成位置的最短距離不大於150微米,但本發明不限於此,容許公差範圍R可以依照晶片接合區101的尺寸而調整。For example, the allowable tolerance range R of the predetermined formation position of the inner edge IE of the
在一實施例中,內緣IE具有相互垂直的第一邊IE1與第二邊IE2,且第一邊IE1與第二邊IE2相連形成位於角落C的轉角IE3。進一步而言,晶片接合區101具有相對的二個長邊與二個短邊,而第一邊IE1可以是位於晶片接合區101的長邊,第二邊IE2可以是位於晶片接合區101的短邊,但本發明不限於此。此外,如圖1A所示,至少一參考標記124的數量可以為多個(圖1A中示意地繪示出八個)且分別位於開口OP的四個角落C,其中每個角落C上的參考標記124的數量為二個,且分別垂直於第一邊IE1與第二邊IE2而設置,但本發明不限於此。In one embodiment, the inner edge IE has a first side IE1 and a second side IE2 that are perpendicular to each other, and the first side IE1 and the second side IE2 are connected to form a corner IE3 at the corner C. Further, the
在一實施例中,參考標記124可以為矩形長條圖案124’且數量為至少二個,換句話說,角落C上可以包括至少二個矩形長條圖案124’的參考標記124,其中至少二個參考標記124分別位於形成轉角IE3的第一邊IE1與第二邊IE2上,如圖1B所示,但本發明不限於此,在其他實施例中,參考標記可以依實際設計上的需求而具有不同數量與形狀。In one embodiment, the
在一實施例中,矩形長條圖案124’的相對二個側壁分別構成第一端部E1與第二端部E2,舉例而言,矩形長條圖案124’具有相對的二個長邊與相對的二個短邊,分別構成第一端部E1與第二端部E2的相對二個側壁為其二個短邊,但本發明不限於此,在未繪示的實施例中,分別構成第一端部E1與第二端部E2的相對二個側壁也可以為其二個長邊。In one embodiment, the two opposite side walls of the rectangular strip pattern 124' respectively form the first end E1 and the second end E2. For example, the rectangular strip pattern 124' has two opposite long sides and opposite sides. The two short sides of the first end portion E1 and the two opposite side walls of the second end portion E2 respectively constitute the two short sides thereof, but the present invention is not limited to this. The two opposite side walls of the one end portion E1 and the second end portion E2 may also be the two long sides.
在一實施例中,角落C為可撓性線路基板10上的空白區域(不具有功能性引腳存在),因此設置於其上的參考標記124不耦接引腳122。進一步而言,由於空白區域具有較大的空間且不會影響到可撓性線路基板10上的線路連接,因此參考標記124在此設計下可以在不影響可撓性線路基板10的電性能力之下具有較大的空間設置彈性,但本發明不限於此。In one embodiment, the corner C is a blank area on the flexible circuit substrate 10 (without functional pins), so the reference marks 124 disposed thereon are not coupled to the
在一實施例中,圖案化線路層120的引腳122與參考標記124例如是藉由相同製程及相同材料所形成,換句話說,引腳122與參考標記124為一體成型結構,但本發明不限於此。In one embodiment, the
在此必須說明的是,以下實施例沿用上述實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明,關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。It must be noted here that the following embodiments use the element numbers and parts of the above-mentioned embodiments, wherein the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted, and the description of the omitted part is omitted. Reference may be made to the foregoing embodiments, and detailed descriptions in the following embodiments will not be repeated.
圖2A是依照本發明另一實施例的薄膜覆晶封裝結構的部分俯視示意圖。圖2B是圖2A中的晶片接合區的角落部分的放大示意圖。請參考圖2A與圖2B,本實施例的薄膜覆晶封裝結構1a類似於上述實施例的薄膜覆晶封裝結構1,而其差別在於:本實施例的薄膜覆晶封裝結構1a的圖案化線路層120a的參考標記124a具有位在晶片接合區101內的第一部分P1a、為防銲層110所覆蓋的第二部分P2a以及連接第一部分P1a與第二部分P2a的第三部分P3a,其中第一部分P1a與第二部分P2a具有平行防銲層110的內緣IE的第一邊IE1與第二邊IE2的區段。進一步而言,在本實施例中,第一部分P1a平行第一邊IE1的區段P1a1與平行第二邊IE2的區段P1a2相連構成L型的形狀,第二部分P2a平行第一邊IE1的區段P2a1與平行第二邊IE2的區段P2a2相連構成L型的形狀,而第三部分P3a可以連接第一部分P1a的L型轉折點(即區段P1a1與區段P1a2的交點)與第二部分P2a的L型轉折點(即區段P2a1與區段P2a2的交點),但本發明不限於此,在其他實施例中,第一部分與第二部分可以具有其他態樣。FIG. 2A is a partial top view of a chip on film package structure according to another embodiment of the present invention. FIG. 2B is an enlarged schematic view of a corner portion of the wafer bonding area in FIG. 2A . Referring to FIGS. 2A and 2B , the chip on
在一實施例中,第一部分P1a的一側壁構成第一端部E1a,第二部分P2a的一側壁構成第二端部E2a,其中第一部分P1a中構成第一端部E1a的側壁例如是第一部分P1a最遠離內緣IE的側壁,第二部分P2a中構成第二端部E2a的側壁例如是第二部分P2a最遠離內緣IE的側壁,但本發明不限於此。In one embodiment, a side wall of the first portion P1a constitutes the first end portion E1a, and a side wall of the second portion P2a constitutes the second end portion E2a, wherein the side wall of the first portion P1a constituting the first end portion E1a is, for example, the first portion P1a is farthest from the side wall of the inner edge IE, and the side wall of the second portion P2a constituting the second end E2a is, for example, the side wall of the second portion P2a farthest from the inner edge IE, but the invention is not limited thereto.
圖3A是依照本發明又一實施例的薄膜覆晶封裝結構的部分俯視示意圖。圖3B是圖3A中的晶片接合區的角落部分的放大示意圖。請參考圖3A與圖3B,本實施例的薄膜覆晶封裝結構1b類似於上述實施例的薄膜覆晶封裝結構1a,而其差別在於:本實施例的薄膜覆晶封裝結構1b的圖案化線路層120b的參考標記124b的第一部分P1b與第二部分P2b的形狀為弧形。進一步而言,第一部分P1b平行第一邊IE1的區段P1b1與平行第二邊IE2的區段P1b2以及第二部分P2b平行第一邊IE1的區段P2b1與平行第二邊IE2的區段P2b2可以順應內緣IE的轉角IE3的轉彎弧度相連構成弧形,而第三部分P3b可以連接第一部分P1b的弧形頂點與第二部分P2b的弧形頂點,但本發明不限於此。FIG. 3A is a partial top schematic view of a chip on film package structure according to still another embodiment of the present invention. FIG. 3B is an enlarged schematic view of a corner portion of the wafer bonding area in FIG. 3A . Referring to FIGS. 3A and 3B , the chip on
在一實施例中,第一部分P1b的一側壁構成第一端部E1b,第二部分P2b的一側壁構成第二端部E2b,而第一端部E1b與第二端部E2b可以類似於第一端部E1a與第二端部E2a,於此不再贅述。In one embodiment, a side wall of the first portion P1b constitutes the first end portion E1b, a side wall of the second portion P2b constitutes the second end portion E2b, and the first end portion E1b and the second end portion E2b may be similar to the first end portion E1b and the second end portion E2b. The end portion E1a and the second end portion E2a will not be repeated here.
綜上所述,本發明於防銲層的開口的角落上設置參考標記,並將參考標記設計為第一端部與第二端部之間的最短距離等於由開口界定出的防銲層的內緣的預定形成位置的容許公差範圍,如此一來,可以直接以外觀圖形判斷防銲層是否有溢流超出規格或覆蓋不足的情形產生,不需再以人工方式藉由尺規進行量測,降低確認時間、人力支出與汙染材料的風險,因此可以在減少人力與時間成本的同時降低汙染材料的機率。此外,當角落為可撓性線路基板上的空白區域時,由於空白區域具有較大的空間且不會影響到可撓性線路基板上的線路連接,因此參考標記在此設計下可以在不影響可撓性線路基板的電性能力之下具有較大的空間設置彈性。To sum up, in the present invention, reference marks are set on the corners of the opening of the solder mask, and the reference marks are designed so that the shortest distance between the first end and the second end is equal to the distance of the solder mask defined by the opening. The allowable tolerance range of the predetermined formation position of the inner edge. In this way, it is possible to directly judge whether the solder mask has overflow exceeding the specification or insufficient coverage by the appearance graphics, and no need to manually measure with a ruler. , reduce the confirmation time, labor expenditure and the risk of contaminating materials, so it can reduce the probability of contaminating materials while reducing labor and time costs. In addition, when the corner is a blank area on the flexible circuit substrate, since the blank area has a large space and will not affect the circuit connection on the flexible circuit substrate, the reference mark can be designed without affecting the flexible circuit substrate. Under the electrical capability of the flexible circuit substrate, there is greater flexibility in spatial arrangement.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above by the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.
1、1a、1b:薄膜覆晶封裝結構
10:可撓性線路基板
100:可撓性薄膜
110:防銲層
120、120a、120b:圖案化線路層
122:引腳
124、124a、124b:參考標記
124’:矩形長條圖案
101:晶片接合區
20:晶片
30:封裝膠體
C:角落
E1、E1a、E1b:第一端部
E2、E2a、E2b:第二端部
IE:內緣
IE1:第一邊
IE2:第二邊
IE3:轉角
OP:開口
P1、P2:部分
P1a、P1b:第一部分
P2a、P2b:第二部分
P3a、P3b:第三部分
P1a1、P1a2、P2a1、P2a2:區段
R:容許公差範圍1, 1a, 1b: Thin film flip chip packaging structure
10: Flexible circuit substrate
100: Flexible film
110:
圖1A是依照本發明一實施例的薄膜覆晶封裝結構的部分俯視示意圖。 圖1B是圖1A中的晶片接合區的角落部分的放大示意圖。 圖2A是依照本發明另一實施例的薄膜覆晶封裝結構的部分俯視示意圖。 圖2B是圖2A中的晶片接合區的角落部分的放大示意圖。 圖3A是依照本發明又一實施例的薄膜覆晶封裝結構的部分俯視示意圖。 圖3B是圖3A中的晶片接合區的角落部分的放大示意圖。 應說明的是,為清楚表示,圖1A、圖2A與圖3A的晶片、防銲層與封裝膠體採用透視繪法呈現。 FIG. 1A is a partial top schematic view of a chip on film package structure according to an embodiment of the present invention. FIG. 1B is an enlarged schematic view of a corner portion of the wafer bonding area in FIG. 1A . FIG. 2A is a partial top view of a chip on film package structure according to another embodiment of the present invention. FIG. 2B is an enlarged schematic view of a corner portion of the wafer bonding area in FIG. 2A . FIG. 3A is a partial top schematic view of a chip on film package structure according to still another embodiment of the present invention. FIG. 3B is an enlarged schematic view of a corner portion of the wafer bonding area in FIG. 3A . It should be noted that, for the sake of clarity, the wafer, solder mask and encapsulant of FIGS. 1A , 2A and 3A are represented by perspective drawing.
101:晶片接合區 101: Wafer Bonding Area
110:防銲層 110: Solder mask
124:參考標記 124: Reference mark
124’:矩形長條圖案 124': Rectangular strip pattern
C:角落 C: corner
E1:第一端部 E1: first end
E2:第二端部 E2: Second end
IE:內緣 IE: inner edge
IE1:第一邊 IE1: first side
IE2:第二邊 IE2: Second side
IE3:轉角 IE3: Corner
P1、P2:部分 P1, P2: Partially
R:容許公差範圍 R: Allowable tolerance range
Claims (10)
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CN202110700110.9A CN115226300A (en) | 2021-04-14 | 2021-06-23 | Flexible circuit substrate and thin film flip chip package structure |
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TW200601907A (en) * | 2004-03-30 | 2006-01-01 | Sharp Kk | Semiconductor apparatus, manufacturing method thereof, semiconductor module apparatus using semiconductor apparatus, and wire substrate for semiconductor apparatus |
CN101609824A (en) * | 2008-06-18 | 2009-12-23 | 力成科技股份有限公司 | Universal substrate for semiconductor package and semiconductor package structure |
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KR100874922B1 (en) * | 2007-03-20 | 2008-12-19 | 삼성전자주식회사 | Overlay mark of semiconductor device and semiconductor device including the overlay mark |
CN106601721B (en) * | 2016-12-21 | 2020-02-04 | 颀中科技(苏州)有限公司 | Flip chip package structure |
TWI726441B (en) * | 2019-10-08 | 2021-05-01 | 南茂科技股份有限公司 | Flexible circuit substrate and chip-on-film package structure |
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TW200601907A (en) * | 2004-03-30 | 2006-01-01 | Sharp Kk | Semiconductor apparatus, manufacturing method thereof, semiconductor module apparatus using semiconductor apparatus, and wire substrate for semiconductor apparatus |
TWI292682B (en) * | 2004-03-30 | 2008-01-11 | Sharp Kk | Semiconductor apparatus, manufacturing method thereof, semiconductor module apparatus using semiconductor apparatus, and wire substrate for semiconductor apparatus |
CN101609824A (en) * | 2008-06-18 | 2009-12-23 | 力成科技股份有限公司 | Universal substrate for semiconductor package and semiconductor package structure |
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