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TWI741154B - Ｓｎ－Ｚｎ－Ｏ系氧化物燒結體及其製造方法 - Google Patents

Ｓｎ－Ｚｎ－Ｏ系氧化物燒結體及其製造方法 Download PDF

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Publication number
TWI741154B
TWI741154B TW107106493A TW107106493A TWI741154B TW I741154 B TWI741154 B TW I741154B TW 107106493 A TW107106493 A TW 107106493A TW 107106493 A TW107106493 A TW 107106493A TW I741154 B TWI741154 B TW I741154B
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TW
Taiwan
Prior art keywords
sintered body
oxide sintered
less
powder
phase
Prior art date
Application number
TW107106493A
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English (en)
Chinese (zh)
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TW201900581A (zh
Inventor
桒原正和
仁藤茂生
Original Assignee
日商住友金屬鑛山股份有限公司
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Publication of TW201900581A publication Critical patent/TW201900581A/zh
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Publication of TWI741154B publication Critical patent/TWI741154B/zh

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C04B2235/762—Cubic symmetry, e.g. beta-SiC
    • C04B2235/763—Spinel structure AB2O4
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)
  • Conductive Materials (AREA)
TW107106493A 2017-05-12 2018-02-27 Ｓｎ－Ｚｎ－Ｏ系氧化物燒結體及其製造方法 TWI741154B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-095982 2017-05-12
JP2017095982A JP6859841B2 (ja) 2017-05-12 2017-05-12 Ｓｎ−Ｚｎ−Ｏ系酸化物焼結体とその製造方法

Publications (2)

Publication Number Publication Date
TW201900581A TW201900581A (zh) 2019-01-01
TWI741154B true TWI741154B (zh) 2021-10-01

Family

ID=64105463

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107106493A TWI741154B (zh) 2017-05-12 2018-02-27 Ｓｎ－Ｚｎ－Ｏ系氧化物燒結體及其製造方法

Country Status (5)

Country Link
JP (1) JP6859841B2 (ja)
KR (1) KR20200006534A (ja)
CN (1) CN110573474A (ja)
TW (1) TWI741154B (ja)
WO (1) WO2018207414A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019131866A (ja) * 2018-01-31 2019-08-08 住友金属鉱山株式会社 酸化物スパッタ膜、酸化物スパッタ膜の製造方法、酸化物焼結体及び透明樹脂基板
JP2019183244A (ja) * 2018-04-16 2019-10-24 住友金属鉱山株式会社 透明酸化物積層膜、透明酸化物積層膜の製造方法、スパッタリングターゲット及び透明樹脂基板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007026783A1 (ja) * 2005-09-01 2007-03-08 Idemitsu Kosan Co., Ltd. スパッタリングターゲット、透明導電膜及び透明電極
CN101038796A (zh) * 2006-03-15 2007-09-19 住友金属矿山株式会社 氧化物烧结体、其制造方法、用它制造透明导电膜的方法以及所得的透明导电膜
TW201500570A (en) * 2013-04-12 2015-01-01 Hitachi Metals Ltd Oxide semiconductor target, oxide semiconductor film and method for producing the same, and thin-film transistor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2805813B2 (ja) * 1988-08-09 1998-09-30 東ソー株式会社 スパッタリングターゲット及びその製造方法
JP4761868B2 (ja) * 2005-07-27 2011-08-31 出光興産株式会社 スパッタリングターゲット、その製造方法及び透明導電膜
WO2007141994A1 (ja) * 2006-06-08 2007-12-13 Sumitomo Metal Mining Co., Ltd. 酸化物焼結体、ターゲット、およびそれを用いて得られる透明導電膜、並びに透明導電性基材
KR20130080063A (ko) * 2008-06-06 2013-07-11 이데미쓰 고산 가부시키가이샤 산화물 박막용 스퍼터링 타겟 및 그의 제조 방법
CN102216237B (zh) * 2008-11-20 2015-05-13 出光兴产株式会社 ZnO-SnO2-In2O3类氧化物烧结体及非晶质透明导电膜
JP5686067B2 (ja) * 2011-08-05 2015-03-18 住友金属鉱山株式会社 Ｚｎ−Ｓｎ−Ｏ系酸化物焼結体とその製造方法
DE112015004083B4 (de) * 2014-09-04 2021-01-21 Ngk Insulators, Ltd. Zinkoxid-Sinterkörper und Verfahren zur Herstellung desselben

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007026783A1 (ja) * 2005-09-01 2007-03-08 Idemitsu Kosan Co., Ltd. スパッタリングターゲット、透明導電膜及び透明電極
CN101038796A (zh) * 2006-03-15 2007-09-19 住友金属矿山株式会社 氧化物烧结体、其制造方法、用它制造透明导电膜的方法以及所得的透明导电膜
TW201500570A (en) * 2013-04-12 2015-01-01 Hitachi Metals Ltd Oxide semiconductor target, oxide semiconductor film and method for producing the same, and thin-film transistor

Also Published As

Publication number Publication date
JP6859841B2 (ja) 2021-04-14
WO2018207414A1 (ja) 2018-11-15
JP2018193256A (ja) 2018-12-06
KR20200006534A (ko) 2020-01-20
TW201900581A (zh) 2019-01-01
CN110573474A (zh) 2019-12-13

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